Light-emitting substrate, display substrate and display module

Abstract

The utility model discloses a light-emitting substrate, a display substrate and a display module. The light-emitting substrate comprises a substrate; the light-emitting elements are arranged on the substrate, and each light-emitting element comprises a first bottom face facing the substrate, a first top face away from the substrate and a first side face connected with the first bottom face and the first top face; the reflective layer is at least located in a spacing area between the adjacent light-emitting elements; the light condensation layer is positioned on one side, far away from the substrate, of the light-emitting element; a first encapsulation layer extending along a first top surface of the light emitting element and the first side surface of the light emitting element, respectively; wherein the light-reflecting layer is arranged in contact with the first packaging layer between the adjacent light-emitting elements, and the first packaging layer extending along the first top surface of the light-emitting element is located between the light-condensing layer and the light-emitting element.

Description

Technical Field

[0001] This disclosure belongs to the field of display technology, specifically relating to a light-emitting substrate, a display substrate, and a display module. Background Technology

[0002] Miniature inorganic light-emitting diodes include MiniLEDs and MicroLEDs. MiniLEDs refer to light-emitting diode (LED) chips with a die size of approximately 100–300 micrometers. MicroLEDs refer to light-emitting diode chips with a die size of less than 100 micrometers. Display devices using MiniLEDs / MicroLEDs offer advantages such as low power consumption, high brightness, high resolution, high color saturation, fast response time, long lifespan, and high efficiency, leading to their widespread application.

[0003] Currently, display products using MiniLED / MicroLED suffer from low light utilization. Utility Model Content

[0004] This disclosure provides a light-emitting substrate, comprising:

[0005] Base;

[0006] A plurality of light-emitting elements are disposed on the substrate, the light-emitting elements including a first bottom surface facing the substrate, a first top surface away from the substrate, and a first side surface connecting the first bottom surface and the first top surface;

[0007] A reflective layer, wherein the reflective layer is located at least in the spacing region between adjacent light-emitting elements;

[0008] A light-concentrating layer, wherein the light-concentrating layer is located on the side of the light-emitting element away from the substrate;

[0009] A first encapsulation layer extends along the first top surface of the light-emitting element and the first side surface of the light-emitting element, respectively;

[0010] The reflective layer is disposed in contact with the first encapsulation layer between the adjacent light-emitting elements, and the first encapsulation layer extending along the first top surface of the light-emitting element is located between the light-concentrating layer and the light-emitting element.

[0011] In some embodiments, the orthogonal projection of the light-emitting element onto the substrate is located inside the first encapsulation layer;

[0012] The first encapsulation layer is closed and continuously surrounds the first side surface, and the first encapsulation layer extending along the first top surface of the light-emitting element and the first encapsulation layer extending along the first side surface are continuously distributed.

[0013] In some embodiments, the surface of the first encapsulation layer extending along the first side away from the light-emitting element is inclined toward the substrate.

[0014] In some embodiments, the reflective layer includes a plurality of reflective portions located in the spacing region between adjacent light-emitting elements;

[0015] Along the direction close to the substrate, the cross-sectional area of ​​the reflective portion perpendicular to the substrate gradually increases.

[0016] In some embodiments, the reflective portion includes a second bottom surface facing the substrate, a second top surface away from the substrate, and a second side surface connected to the second bottom surface and facing the light-emitting element, wherein the second side surface and the second bottom surface form a first included angle, the first included angle being between 50° and 70°.

[0017] In some embodiments, the first encapsulation layer is divided into a plurality of first encapsulation portions, each of which is disposed in correspondence with one of the light-emitting elements, and adjacent first encapsulation portions are spaced apart.

[0018] In some embodiments, the reflective layer includes a plurality of reflective portions located in a spaced area between adjacent light-emitting elements. Each reflective portion includes a second bottom surface facing the substrate, a second top surface away from the substrate, and a second side surface connected to the second bottom surface and facing the light-emitting diode chip.

[0019] The distance between the second top surface and the substrate is greater than or equal to the distance between the surface of the light-emitting element on the side away from the substrate and the substrate.

[0020] In some embodiments, the distance from the surface of the reflective layer away from the substrate to the substrate is greater than or equal to the distance from the surface of the first encapsulation layer away from the substrate to the substrate.

[0021] In some embodiments, the orthographic projection of the reflective layer onto the substrate does not overlap with the orthographic projection of the light-emitting element onto the substrate, or...

[0022] The reflective layer includes a reflective portion and a light-diffusing portion. The reflective portion is located in the spacer area between adjacent light-emitting elements, and the light-diffusing portion is located on the side of the light-emitting element away from the substrate. The thickness of the light-diffusing portion is between 500 nm and 1000 nm.

[0023] In some embodiments, the material of the reflective layer includes a first matrix and first particles incorporated into the first matrix;

[0024] The material of the first matrix includes resin; the first particles include at least one of titanium dioxide particles and silver nanoparticles.

[0025] In some embodiments, the light-concentrating layer includes a plurality of light-concentrating lenses, each of which projects onto the substrate and covers the projection center of at least one of the light-emitting elements, wherein the projection center of the light-emitting element is the center of the orthogonal projection of the light-emitting element onto the substrate.

[0026] In some embodiments, the surface of the condenser lens away from the substrate is a convex arc surface, and the curvature of the arc surface is between 0.025 and 0.03.

[0027] In some embodiments, each of the light-emitting elements is used to emit light of one color; the light-emitting substrate includes multiple groups of light-emitting elements, each group of light-emitting elements includes multiple light-emitting elements, and the light-emitting colors of the multiple light-emitting elements in the same group of light-emitting elements include multiple colors;

[0028] Wherein, the orthographic projection of each of the condensing lenses onto the substrate overlaps the orthographic projection of one of the light-emitting elements onto the substrate, or,

[0029] The distance between two adjacent light-emitting elements in the same light-emitting element group is less than or equal to 15 micrometers, and the orthogonal projection of each condenser lens on the substrate covers the orthogonal projection of all light-emitting elements in at least one light-emitting element group on the substrate.

[0030] In some embodiments, the light-concentrating layer includes a plurality of light-concentrating lenses of various sizes; the diameter of the light-concentrating lens is less than or equal to 1 / 4 of the width of the light-emitting element, and the height of the light-concentrating lens is less than half of its diameter; the orthographic projection of each light-emitting element on the substrate overlaps with the orthographic projection of the plurality of light-concentrating lenses on the substrate.

[0031] In some embodiments, the light-emitting element includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer disposed sequentially along a direction away from the substrate;

[0032] The first encapsulation layer is in contact with both the light-concentrating layer and the second semiconductor layer; the refractive index of the first encapsulation layer is less than that of the second semiconductor layer and greater than that of the light-concentrating layer.

[0033] In some embodiments, the light-emitting substrate further includes a second encapsulation layer, which is located between the light-concentrating layer and the first encapsulation layer. The second encapsulation layer is in contact with the light-concentrating layer, and the refractive index of the second encapsulation layer is less than or equal to the refractive index of the second semiconductor layer and greater than or equal to the refractive index of the light-concentrating layer.

[0034] In some embodiments, the light-emitting substrate further includes;

[0035] A filler layer is located on the side of the light-concentrating layer away from the substrate;

[0036] A cover plate is located on the side of the filler layer away from the substrate.

[0037] In some embodiments, the light-emitting substrate further includes:

[0038] A light-shielding layer is located between the cover plate and the filling layer. The orthographic projection of the light-shielding layer on the substrate overlaps with the orthographic projection of the spacing area between adjacent light-emitting elements on the substrate, but does not overlap with at least a portion of the orthographic projection of the light-emitting elements on the substrate.

[0039] In some embodiments, the light-concentrating layer includes a plurality of light-concentrating lenses, each of which projects its orthographic projection onto the substrate, covering the projection center of at least one of the light-emitting elements, wherein the projection center of the light-emitting element is the center of its orthographic projection onto the substrate; the closest distance H between the light-shielding layer and the light-concentrating lens in the thickness direction of the substrate, and the width D of the light-shielding layer, satisfy the following:

[0040] D = k*(P0 - 2*H*tanβ);

[0041] Wherein, P0 is the center-to-center distance between two adjacent light-emitting elements, β≤45°, and k is between 0.5 and 1.5.

[0042] In some embodiments, the ratio of the projected area of ​​the light-shielding layer on the substrate to the area of ​​the light-emitting region of the light-emitting substrate is greater than or equal to 80%.

[0043] In some embodiments, the light-emitting substrate further includes a plurality of baffles located between the cover plate and the light-concentrating layer, wherein the orthographic projection of the baffles on the substrate is within the orthographic projection range of the spacing region between adjacent light-emitting elements on the substrate;

[0044] The barrier is used to reflect at least a portion of the light illuminating the LED chip onto the barrier in a direction away from the substrate;

[0045] At least a portion of the filling layer is located in the gap area between adjacent retaining walls.

[0046] In some embodiments, the retaining wall includes a fourth bottom surface facing the base and a fourth side surface connected to the fourth bottom surface and facing an adjacent retaining wall, wherein the fourth bottom surface and the fourth side surface form an angle of 50° to 70°.

[0047] In some embodiments, the distance h between the barrier and the light-emitting element in the thickness direction of the substrate is less than or equal to (10*tanδ) micrometers.

[0048] The surface of the barrier facing the substrate has a first edge close to the light-emitting element, and the first top surface of the light-emitting element has a second edge close to the barrier. δ is the acute angle between the plane defined by the first edge and the second edge and the plane of the substrate.

[0049] This disclosure also provides a display substrate, wherein the display substrate adopts the above-described light-emitting substrate.

[0050] This disclosure also provides a display module, including a backlight module and a liquid crystal display panel located on the light-emitting side of the backlight module, wherein the backlight module includes the aforementioned light-emitting substrate. Attached Figure Description

[0051] Figure 1 This is a schematic diagram of a light-emitting element provided in some embodiments.

[0052] Figure 2 This is a schematic diagram showing light emanating from the side of the light-emitting element.

[0053] Figure 3 This is a graph showing the light intensity distribution of the light-emitting element.

[0054] Figure 4 This is a schematic diagram of the light-emitting substrate provided in Embodiment 1 of this disclosure.

[0055] Figure 5 This is a schematic diagram of the process of forming a reflective layer provided in Embodiment 1 of this disclosure.

[0056] Figure 6 The graph shows the relationship between the light emission brightness and the viewing angle of the light-emitting substrate of Example 1 and the light-emitting substrate of the comparative example.

[0057] Figure 7 This is a schematic diagram of the light-emitting substrate provided in Embodiment 2 of this disclosure.

[0058] Figure 8 This is a schematic diagram of the light-emitting substrate provided in Embodiment 3 of this disclosure.

[0059] Figure 9A The graph shows the relationship between the light emission intensity of the light-emitting substrate and the viewing angle when the second encapsulation layer is set to different refractive indices.

[0060] Figure 9B The graphs show the relationship between the light emission brightness and the viewing angle of the light-emitting substrates in Examples 1, 3, and the comparative examples.

[0061] Figure 10 This is a schematic diagram of the light-emitting substrate provided in Embodiment 4 of this disclosure.

[0062] Figure 11 The graph shows the relationship between the light emission intensity and the viewing angle of the light-emitting substrate of Example 4 and the light-emitting substrate of the comparative example.

[0063] Figure 12 This is a schematic diagram of the light-emitting substrate provided in Embodiment 5 of this disclosure.

[0064] Figure 13 The graph shows the relationship between the light emission intensity and the viewing angle of the light-emitting substrate of Example 5 and the light-emitting substrate of the comparative example.

[0065] Figure 14A This is a schematic diagram of the light-emitting substrate provided in Embodiment Six of this disclosure.

[0066] Figure 14B This is a schematic diagram of the topography of the first encapsulation layer and the reflective portion in the light-emitting substrate provided in Embodiment Six of this disclosure.

[0067] Figure 14C This is a separate top view of the first encapsulation layer and the reflective layer in Embodiment Six of this disclosure.

[0068] Figure 14D This is a top view of the first encapsulation layer, reflective layer, and reflective element superimposed in Embodiment Six of this disclosure.

[0069] Figure 15 This is a schematic diagram of the fabrication process of the light-emitting substrate in Example 5.

[0070] Figure 16A for Figure 15 The graph in Figure (d) shows the relationship between light intensity and viewing angle when the first included angle takes different values.

[0071] Figure 16B for Figure 15 The graph in Figure (d) shows the relationship between light intensity and viewing angle when the reflective part 21 is at different heights.

[0072] Figure 16C The image shows the light emission effect before and after removing the reflective material above the light-emitting element 10 using plasma technology.

[0073] Figure 16D for Figure 15 Figure (e) shows the relationship between light intensity and viewing angle when the surface of the condenser lens 41 is set with different curvatures.

[0074] Figure 16E for Figure 15Figure (e) shows the relationship between light intensity and viewing angle when the condenser lens 41 is set to different refractive indices.

[0075] Figure 17 This is a schematic diagram of the display substrate provided in Embodiment 7 of this disclosure.

[0076] Figure 18 This is a schematic diagram of the display substrate provided in Embodiment 8 of this disclosure.

[0077] Figure 19 for Figure 18 The graph shows the relationship between the light emission intensity of the light-emitting substrate and the viewing angle of the comparative light-emitting substrate. Detailed Implementation

[0078] To enable those skilled in the art to better understand the technical solutions of this disclosure, the disclosure will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0079] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “a,” “an,” “an,” “the,” and similar words used in this disclosure do not indicate quantity limitation and may indicate singular or plural. The terms “comprising,” “including,” “having,” and any variations thereof used in this disclosure are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include steps or units not listed, or may include other steps or units inherent to such processes, methods, products, or devices. The terms “connected,” “linked,” “coupled,” and similar words used in this disclosure are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Multiple” in this disclosure refers to two or more. “And / or” describes the relationship between related objects, indicating that three relationships may exist; for example, “A and / or B” can indicate: A alone, A and B simultaneously, or B alone. The character " / " generally indicates that the preceding and following objects are in an "or" relationship. The terms "first," "second," "third," etc., used in this disclosure are merely to distinguish similar objects and do not represent a specific ordering of objects. "Above," "below," "left," "right," etc., are only used to indicate relative positional relationships; when the absolute position of the described objects changes, the relative positional relationship may also change accordingly.

[0080] Figure 1This is a schematic diagram of a light-emitting element provided in some embodiments. The light-emitting element can be a MiniLED element or a MicroLED element. The light-emitting element 10 is disposed on a sapphire substrate PSS and sequentially disposed along a direction away from the sapphire substrate PSS, comprising a second semiconductor layer 12, a light-emitting layer 13, a first semiconductor layer 11, and a contact layer 14. The light-emitting layer 13 can be a multi-quantum-well layer. One of the first semiconductor layer 11 and the second semiconductor layer 12 is an N-type semiconductor layer, and the other is a P-type semiconductor layer. For example, the material of the N-type semiconductor layer includes N-type gallium nitride (N-GaN), and the material of the P-type semiconductor layer includes P-type gallium nitride (P-GaN). The contact layer includes a first electrode electrically connected to the first semiconductor layer 11 and a second electrode electrically connected to the second semiconductor layer 12. Figure 1 When the light-emitting element 10 is used in the light-emitting substrate, the first electrode and the second electrode of the light-emitting element 10 are electrically connected to the driving wiring layer of the light-emitting substrate; the sapphire substrate PSS is stripped away. At this time, the second semiconductor layer 12 is located on the side of the light-emitting layer 13 away from the substrate of the light-emitting substrate.

[0081] For example, the surface of the sapphire substrate PSS can be patterned to form a bumpy surface, thereby forming a bumpy surface on the surface of the second semiconductor layer 12 away from the light-emitting layer 13, which can improve the light extraction efficiency of the light-emitting element 10.

[0082] Gallium nitride (GaN) has a relatively high refractive index. When light emitted from the light-emitting layer 13 is emitted from the light-emitting element 10 into air with a refractive index of 1, some of the light will undergo total internal reflection. Taking a gallium nitride (GaN) refractive index of 2.5 as an example, the critical angle for total internal reflection is θ = 25°. Figure 2 As shown, when light is incident on the top surface of the light-emitting element 10 (the surface of the second semiconductor layer 12 away from the light-emitting layer 13), if the incident angle is less than θ, the light will exit directly from the top surface. If the incident angle is greater than θ, total internal reflection will occur, causing part of the light to be reflected downwards and exit from the top surface, while the other part will be reflected downwards and exit from the side. As the size of the light-emitting element 10 decreases, the proportion of its side surface in the overall surface of the light-emitting element 10 increases, making the side light emission more pronounced.

[0083] Figure 3 The graph shows the light intensity distribution of the light-emitting element 10, where... Figure 3 The vertical axis represents the normalized light intensity. From Figure 3As can be seen, due to the light emission from the side of the light-emitting element 10, the light emission of the light-emitting element 10 is not a traditional Lambertian distribution. Instead, the light intensity in both the vertical (V) and horizontal (H) directions increases with the increase of the viewing angle. In other words, the light from the light-emitting element 10 will scatter in all directions. This results in the inability to utilize large-angle light in display products using Mini-LED / Micro-LED, causing a significant loss in light efficiency.

[0084] Figure 4 This is a schematic diagram of the light-emitting substrate provided in Embodiment 1 of this disclosure, as shown below. Figure 4 As shown, the light-emitting substrate includes: a substrate SUB, a plurality of light-emitting elements 10 disposed on the substrate SUB, and a reflective layer 20. Each light element includes a first bottom surface facing the substrate SUB, a first top surface away from the substrate SUB, and a first side surface connecting the first bottom surface and the first top surface. The reflective layer 20 is located at least in the spacing region between adjacent light-emitting elements 10. The reflective layer 20 is used to reflect at least a portion of the light rays incident on the reflective layer 20 via the first side surface in a direction away from the substrate SUB.

[0085] It should be noted that the reflective layer 20 can reflect light through surface reflection, or the reflective layer 20 may contain scattering particles, which scatter light to achieve overall light reflection.

[0086] For example, the light-emitting element 10 can be a Mini-LED element or a Micro-LED element.

[0087] exist Figure 4 In this light-emitting substrate, since a reflective layer 20 is provided in the space between adjacent light-emitting elements 10, when the light emitted from the side of the light-emitting element 10 is reflected by the reflective layer 20, it is finally emitted from the front of the light-emitting substrate, thereby improving the light emission efficiency.

[0088] In some embodiments, the reflectivity of the reflective layer 20 is greater than or equal to 60%, thereby improving the reflection effect on light emitted from the side of the light-emitting element 10. Preferably, the reflectivity of the reflective layer 20 is greater than or equal to 80%, to further improve the reflection effect on light.

[0089] In some embodiments, the reflective layer 20 may include a first matrix and first particles incorporated therein. The first matrix may be made of resin, and the first particles may be made of at least one of titanium dioxide (TiO2) particles, zirconium dioxide (ZrO2) particles, and silver nanoparticles.

[0090] In some embodiments, the distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the distance from the surface of the light-emitting element 10 away from the substrate SUB to the substrate SUB. For example, the light-emitting element 10 includes a first semiconductor layer 11, a light-emitting layer 13, and a second semiconductor layer 12 sequentially disposed along a direction away from the substrate SUB (see [reference]). Figure 1 The distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the maximum distance from the surface of the second semiconductor layer 12 away from the substrate SUB to the substrate SUB, thereby enabling more light emitted from the first side to be reflected by the reflective layer 20.

[0091] In some embodiments, the reflective layer 20 includes a plurality of reflective portions 21 located in the interval region between adjacent light-emitting elements 10. The reflective layer 20 is not provided on the side of the light-emitting element 10 away from the substrate SUB, so as to prevent the reflective layer 20 from blocking the emitted light above the light-emitting element 10.

[0092] Figure 5 This is a schematic diagram of the process of forming a reflective layer provided in Embodiment 1 of this disclosure, as shown below. Figure 5 As shown, a reflective material layer 20a is covered on the substrate SUB on which the light-emitting element 10 is formed, and a certain pressure is applied, for example, the process temperature is about 100°C and the pressure is about 0.5 MPa; then, the reflective material on the surface of the light-emitting element 10 is removed by plasma process, thereby forming a reflective layer 20. The reflective layer 20 includes a plurality of reflective parts 21. In addition, the reflective layer 21 may also include an outer portion surrounding the plurality of light-emitting elements 10; that is, for each light-emitting element 10, a reflective layer 20 surrounds it.

[0093] Figure 6 The graph shows the relationship between the light emission brightness and viewing angle of the light-emitting substrate in Embodiment 1 and the light-emitting substrate in the comparative example. In this disclosure, the light-emitting substrate in the comparative example refers to a substrate without a reflective layer 20, and with an encapsulation layer on the side of the light-emitting element 10 away from the substrate. The refractive index of the encapsulation layer is, for example, 1.5. Figure 4 The light-emitting substrate is obtained by removing the reflective layer 20 and covering it with an encapsulation layer with a refractive index of 1.5. The viewing angle is the angle between the viewing position and the normal to the center of the light-emitting substrate; a positive viewing angle indicates viewing from the right side of the light-emitting substrate, and a negative viewing angle indicates viewing from the left side. In the simulation, the light-emitting element 10 in the comparative example and the light-emitting substrate in Example 1 is the same, and the reflectivity of the reflective layer 20 in Example 1 is above 60%. Figure 6 It can be seen that, compared with the light-emitting substrate without the reflective layer 20, the light-emitting substrate with the reflective layer 20 has a lower light emission brightness at large angles and a higher light emission brightness at 0°.

[0094] Figure 7 This is a schematic diagram of the light-emitting substrate provided in Embodiment 2 of this disclosure, as shown below. Figure 7 The light-emitting substrate shown is Figure 4 Similar, the only difference is, Figure 7 In addition to including multiple reflective portions 21 located between adjacent light-emitting elements 10, the intermediate reflective layer 20 may also include a light-diffusing portion 22. The light-diffusing portion 22 is located on the side of the light-emitting element 10 away from the substrate SUB, and its thickness is between 500 nm and 1000 nm. Since the light-diffusing portion 22 is relatively thin, it can achieve a certain light-diffusing effect.

[0095] For example, the light-diffusing part 22 and the light-reflecting part 21 can be connected as a single structure.

[0096] Figure 8 This is a schematic diagram of the light-emitting substrate provided in Embodiment 3 of this disclosure. Figure 8 The light-emitting substrate shown is Figure 4 Similarly, in some embodiments, the distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the distance from the surface of the light-emitting element 10 away from the substrate SUB to the substrate SUB. For example, the light-emitting element 10 includes a first semiconductor layer 11, a light-emitting layer 13, and a second semiconductor layer 12 sequentially disposed along a direction away from the substrate SUB (see [reference]). Figure 1 The distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the maximum distance from the surface of the second semiconductor layer 12 away from the substrate SUB to the substrate SUB, thereby enabling more light emitted from the first side to be reflected by the reflective layer 20. Figure 8 and Figure 4 The difference is that, Figure 8 The light-emitting substrate also includes a light-concentrating layer 40, which is located on the side of the light-emitting element 10 and the reflective layer 20 away from the substrate SUB. By setting the light-concentrating layer 40, the light emitted from the light-emitting element 10 can be focused, further improving the brightness of the front light emitted from the light-emitting substrate.

[0097] For example, such as Figure 8 As shown, the light-concentrating layer 40 may include a plurality of light-concentrating lenses 41, and the orthogonal projection of each light-concentrating lens 41 on the substrate SUB covers the projection center of at least one light-emitting element 10, and the projection center of the light-emitting element 10 is the center of the orthogonal projection of the light-emitting element 10 on the substrate SUB.

[0098] Preferably, the orthogonal projection of each condenser lens 41 onto the substrate SUB covers the orthogonal projection of at least one light-emitting element 10 onto the substrate SUB.

[0099] For example, each light-emitting element 10 is used to emit light of one color; such as Figure 8 As shown, the light-emitting substrate includes multiple light-emitting element groups 101, each light-emitting element group 101 including multiple light-emitting elements 10, and the multiple light-emitting elements 10 in the same light-emitting element group 101 can emit multiple colors; for example, the multiple light-emitting elements 10 in the same light-emitting element group 101 include a red light-emitting element 10r, a green light-emitting element 10g, and a blue light-emitting element 10b. Figure 4 , Figure 5 and Figure 7 The three adjacent light-emitting elements 10 shown can be a red light-emitting element 10r, a green light-emitting element 10g, and a blue light-emitting element 10b, respectively. It should be noted that the light-emitting substrate in this embodiment can be used as a display substrate, in which case a group of light-emitting elements 101 can serve as a pixel of the display substrate, and a single light-emitting element 10 can serve as a sub-pixel of the display substrate. Alternatively, the light-emitting substrate can be used in a backlight module, in which case the light-emitting substrate provides a light source for the display panel, and the group of light-emitting elements 101 no longer serves as a pixel.

[0100] Among them, Figure 8 In this configuration, the orthographic projection of each condenser lens 41 onto the substrate SUB can cover the orthographic projection of one light-emitting element 10 onto the substrate SUB. For example, the center of the orthographic projection of the condenser lens 41 coincides with the center of the orthographic projection of the light-emitting element 10. For example, the center of the orthographic projection of the condenser lens 41 onto the substrate SUB completely coincides with the center of the orthographic projection of the light-emitting element 10 onto the substrate SUB. For example, when the orthographic projection of the condenser lens 41 onto the substrate SUB is circular, the two centers are considered to coincide if the distance between the two centers is less than or equal to 1 / 10 of the diameter of the orthographic projection of the condenser lens 41. For example, when the orthographic projection of the condenser lens 41 onto the substrate SUB is of other shapes, the deviation range for considering the two centers to coincide can be determined by referring to the deviation range when the orthographic projection of the condenser lens 41 onto the substrate SUB is circular.

[0101] For example, the surface of the condenser lens 41 away from the substrate SUB is a convex arc surface with a curvature between 0.025 and 0.03.

[0102] For example, such as Figure 8 As shown, the light-emitting substrate may further include a second encapsulation layer 32, which is located between the plurality of light-emitting elements 10 and the light-concentrating layer 40. The second encapsulation layer 32 is disposed in contact with the light-concentrating layer 40. Each light-emitting element 10 includes a first semiconductor layer 11, a light-emitting layer 13, and a second semiconductor layer 12 sequentially disposed along a direction away from the substrate SUB. The refractive index of the second encapsulation layer 32 is less than or equal to the refractive index of the second semiconductor layer 12, and greater than or equal to the refractive index of the light-concentrating layer 40. When the light-concentrating layer 40 includes a condensing lens 41, the refractive index of the light-concentrating layer 40 is the same as the refractive index of the condensing lens 41.

[0103] For example, in Figure 8 In the structure shown, the second encapsulation layer 32 is in contact with the second semiconductor layer 12 and the light-concentrating layer 40. The refractive index of the second encapsulation layer 32 is less than that of the second semiconductor layer 12 and greater than that of the light-concentrating lens 41, thereby improving the extraction rate of light emitted from the front of the light-emitting element 10 and achieving high light efficiency extraction.

[0104] For example, the refractive index of the second semiconductor layer 12 is 2.2 to 2.4, the refractive index of the condenser lens 41 is 1.4 to 1.6, and the refractive index of the second encapsulation layer 32 is 1.7 to 2.1.

[0105] For example, one of the first semiconductor layer 11 and the second semiconductor layer 12 is made of N-type GaN, and the other is made of P-type GaN. The material of the second encapsulation layer 32 includes a modified organic material, such as selenized polycarbonate; or a nanocomposite modified material, such as TiO2 / epoxy nanocomposite material or ZrO2 / polyurethane acrylate. The material of the condenser lens 41 may include a resin material, such as at least one of epoxy resin, polyurethane acrylate, and silicone resin.

[0106] For example, the center-to-center spacing between adjacent light-emitting elements 10 is between 25 and 35 μm, such as 25 μm, 30 μm, and 35 μm. For example, the center of the orthogonal projection of the condenser lens 41 onto the substrate SUB is approximately coincident with the center of the orthogonal projection of the light-emitting element 10 onto the substrate SUB.

[0107] In other examples, the refractive index of the condenser lens 41 may also be greater than 1.6, and the refractive index of the second encapsulation layer 32 may be greater than the refractive index of the condenser lens 41 but less than the refractive index of the second semiconductor layer.

[0108] Figure 9A The graph shows the relationship between the light emission intensity of the light-emitting substrate and the viewing angle when the second encapsulation layer 32 is set to different refractive indices. The vertical axis represents the normalized light intensity. Specifically, when obtaining the various relationship curves through simulation, [the graph shows...]. Figure 8 The light-concentrating layer 40 is replaced with a third encapsulation layer with a refractive index of 1.5. Figure 9A Different curves correspond to different combinations of refractive indices, for example, Figure 9A The curves corresponding to 2.3 / 2.1 / 1.5 indicated in the figure refer to the relationship between light emission intensity and viewing angle when the refractive index of the second semiconductor layer 12 is 2.3, the refractive index of the second encapsulation layer 32 is 2.1, and the refractive index of the third encapsulation layer is 1.5. Figure 9AIt can be seen that when the refractive index of the second semiconductor layer 12 is 2.3 and the refractive index of the third encapsulation layer is 1.5, the refractive index of the second encapsulation layer 32 can be set between 1.7 and 2.1, thereby achieving high luminous efficiency extraction of light from the light-emitting element 10.

[0109] For example, in Figure 8 In the process, the surface of the condensing lens 41 away from the substrate SUB is curved, and the curvature of the curved surface is between 0.025 and 0.03, so as to improve the light-gathering effect of the condensing lens 41 and improve the front brightness of the light-emitting substrate.

[0110] For example, the refractive index of the condenser lens 41 is greater than or equal to 1.45, thereby improving the light-gathering effect of the condenser lens 41 and increasing the brightness of the front side of the light-emitting substrate. For example, the refractive index of the condenser lens 41 can be set to 1.45 to 1.65, or 1.65 to 1.7.

[0111] Figure 9B The graphs show the relationship between the light emission brightness and the viewing angle of the light-emitting substrates in Examples 1, 3, and the comparative example. When simulating the substrates with the three structures, the light-emitting element 10 in each substrate is the same. The reflectivity of the reflective layer 20 in Examples 1 and 3 is greater than or equal to 60%. Figure 9B The simulation results were used to verify the influence of the condenser lens 41 on the light output. Therefore, during the simulation, the refractive indices of the second encapsulation layer 32 and the condenser lens 41 in Example 3 were set to be the same, the thickness of the second encapsulation layer 32 was set to 30–100 μm, the height of the condenser lens 41 was set to 9–11 μm, and the center-to-center spacing of the condenser lens 41 was set to 30 μm. Figure 9B It can be seen that when a condensing lens 41 is provided on the light-emitting side of the light-emitting element 10, the light-emitting brightness of the front side of the light-emitting substrate can be improved.

[0112] Figure 10 This is a schematic diagram of the light-emitting substrate provided in Embodiment 4 of this disclosure. Figure 10 The light-emitting substrate shown is Figure 4 Similarly, in some embodiments, the distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the distance from the surface of the light-emitting element 10 away from the substrate SUB to the substrate SUB. For example, the light-emitting element 10 includes a first semiconductor layer 11, a light-emitting layer 13, and a second semiconductor layer 12 sequentially disposed along a direction away from the substrate SUB (see [reference]). Figure 1 The distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the maximum distance from the surface of the second semiconductor layer 12 away from the substrate SUB to the substrate SUB, thereby enabling more light emitted from the first side to be reflected by the reflective layer 20.

[0113] Figure 10 and Figure 4 The difference is that, in Figure 10 In this light-emitting substrate, a light-concentrating layer 40 is also included, which is located on the side of the light-emitting element 10 and the reflective layer 20 away from the substrate SUB. By setting the light-concentrating layer 40, the light emitted from the light-emitting element 10 can be focused, further improving the brightness of the front light emitted from the light-emitting substrate.

[0114] For example, such as Figure 10 As shown, the light-concentrating layer 40 may include a plurality of light-concentrating lenses 41, the orthographic projection of each light-concentrating lens 41 onto the substrate SUB covering the orthographic projections of all light-emitting elements 10 in at least one light-emitting element group 101 onto the substrate SUB. For example, if the distance between two adjacent light-emitting elements 10 in the same light-emitting element group 101 is relatively close (e.g., less than or equal to 15 micrometers), the orthographic projection of each light-concentrating lens 41 onto the substrate SUB covers the orthographic projections of all light-emitting elements 10 in at least one light-emitting element group 101 onto the substrate SUB. For instance, the orthographic projection of each light-concentrating lens 41 onto the substrate SUB covers the orthographic projections of each light-emitting element 10 in a light-emitting element group 101 onto the substrate SUB.

[0115] For example, Figure 10 and Figure 4 The difference also lies in, Figure 10 In this light-emitting substrate, a second encapsulation layer 32 is also included, which is located between the light-concentrating layer 40 and the light-emitting element 10. The refractive index and material of the light-concentrating lens 41 and the second encapsulation layer 32 can be found in [reference needed]. Figure 8 Description in the embodiments.

[0116] For example, Figure 10 and Figure 4 The difference is that, in addition to including multiple reflective portions 21 located between adjacent light-emitting elements 10, the reflective layer 20 also includes a light-diffusing portion 22 located on the side of the light-emitting element 10 away from the substrate SUB, and the thickness of the light-diffusing portion 22 is between 500nm and 1000nm.

[0117] For example, the light-diffusing part 22 and the light-reflecting part 21 are made of the same material and are continuously distributed to form an integral structure.

[0118] For example, the light-diffusing section 22 completely covers the surface of the light-emitting element 10 away from the substrate SUB.

[0119] exist Figure 10 In the light-emitting substrate, the light-diffusing part 22 can play a certain role in uniformly emitting the light emitted by the light-emitting element 10, and the light-concentrating lens 41 covers at least one light-emitting element group 101. This can improve the overall light efficiency and light mixing effect of the light-emitting element 10 and reduce the color shift caused by process errors during alignment.

[0120] Figure 10 The refractive index settings and materials of the condenser lens 22, the second encapsulation layer 32, and the second semiconductor layer can be found in [reference needed]. Figure 8 Description in the embodiments.

[0121] Figure 11 This is a graph showing the relationship between the light emission intensity and viewing angle of the light-emitting substrate in Example 4 and the comparative example, with the vertical axis representing the normalized light intensity. From... Figure 11 As can be seen, compared to the comparative light-emitting substrate, the front brightness of the display substrate in Example 4 can be increased by approximately 45%. Simulation results show... Figure 11 When the curve is displayed, the light-emitting element 10 of the light-emitting substrate in the comparative example is the same as the light-emitting element 10 of the light-emitting substrate in Example 4, but... Figure 9B The light-emitting elements 10 used in the simulation process may not be the same; for example, the light-emitting brightness of the light-emitting elements 10 may be different.

[0122] Figure 12 This is a schematic diagram of the light-emitting substrate provided in Embodiment 5 of this disclosure, as shown below. Figure 12 The display substrate shown is Figure 4 Similarly, in some embodiments, the distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the distance from the surface of the light-emitting element 10 away from the substrate SUB to the substrate SUB. For example, the light-emitting element 10 includes a first semiconductor layer 11, a light-emitting layer 13, and a second semiconductor layer 12 sequentially disposed along a direction away from the substrate SUB (see [reference]). Figure 1 The distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the maximum distance from the surface of the second semiconductor layer 12 away from the substrate SUB to the substrate SUB, thereby enabling more light emitted from the first side to be reflected by the reflective layer 20.

[0123] The light-emitting substrate of Example 5 and Figure 4 The differences include: in Example 5, such as Figure 12 As shown, the light-emitting substrate also includes a light-concentrating layer 40, which is located on the side of the light-emitting element 10 and the reflective layer 20 away from the substrate SUB. By setting the light-concentrating layer 40, the light emitted from the light-emitting element 10 can be focused, further improving the brightness of the front light emitted from the light-emitting substrate.

[0124] For example, such as Figure 12As shown, the light-concentrating layer 40 includes multiple light-concentrating lenses 41 of different sizes. The diameter of each light-concentrating lens 41 is less than or equal to 1 / 4 of the width of the light-emitting element 10, and the height of each light-concentrating lens 41 is less than half of its diameter. The orthographic projection of each light-emitting element 10 onto the substrate SUB overlaps with the orthographic projections of the multiple light-concentrating lenses 41 onto the substrate SUB. For example, the orthographic projection of the light-emitting element 10 onto the substrate SUB overlaps with the orthographic projections of at least two light-concentrating lenses 41 of different sizes onto the substrate SUB.

[0125] exist Figure 12 In the light-concentrating layer 40, multiple light-concentrating lenses 41 can be arranged irregularly and vary in size. In this case, the brightness of the light emitted from the front of the light-emitting substrate can be improved, and the light can be homogenized to prevent rainbow patterns, light and dark patterns from appearing on the display product.

[0126] For example, the light-emitting substrate of embodiment five and Figure 4 The differences can also include: such as Figure 12 As shown, a second encapsulation layer 32 is disposed between the light-concentrating layer 20 and the light-emitting element 10, and the second encapsulation layer 32 is in contact with the light-concentrating layer 40. For example, in... Figure 12 The refractive index settings and materials of the condenser lens 22, the second encapsulation layer 32, and the second semiconductor layer can be found in [reference needed]. Figure 8 Description in the embodiments.

[0127] Figure 13 This is a graph showing the relationship between the light emission intensity of the light-emitting substrate in Example 5 and the light-emitting substrate in the comparative example, and the viewing angle. The vertical axis represents light intensity. From... Figure 13 As can be seen, compared to the comparative light-emitting substrate, the front brightness of the display substrate in Example 5 can be increased by approximately 34%. Simulation results show... Figure 13 When the curve is displayed, the light-emitting element 10 of the comparative light-emitting substrate is the same as the light-emitting element 10 in the light-emitting substrate of Example 5, but... Figure 9B The light-emitting elements 10 used in the simulation process may not be the same; for example, the light-emitting brightness of the light-emitting elements 10 may be different.

[0128] Figure 14A This is a schematic diagram of the light-emitting substrate provided in Embodiment Six of this disclosure, as shown below. Figure 14A As shown, the light-emitting substrate includes: a substrate SUB, a plurality of light-emitting elements 10 disposed on the substrate SUB, and a reflective layer 20. Each light-emitting element 10 includes a first bottom surface facing the substrate SUB, a first top surface away from the substrate SUB, and a first side surface connecting the first bottom surface and the first top surface. The reflective layer 20 is located at least in the spacing region between adjacent light-emitting elements 10.

[0129] For example, the reflective layer 20 includes the first matrix described above and first particles doped in the first matrix.

[0130] For example, the reflectivity of the reflective layer 20 is greater than or equal to 60%, and preferably, the reflectivity of the reflective layer 20 is greater than or equal to 80%.

[0131] In addition, Figure 14A The light-emitting substrate further includes a light-concentrating layer 40 and a first encapsulation layer 31. The light-concentrating layer 40 is located on the side of the light-emitting element 10 away from the substrate SUB. The first encapsulation layer 31 extends along the first top surface and the first side surface of the light-emitting element 10, respectively. The reflective layer 20 is in contact with the first encapsulation layer 31 between adjacent light-emitting elements 10, and the first encapsulation layer 31 extending along the first top surface of the light-emitting element 10 is located between the light-concentrating layer 40 and the light-emitting element 10.

[0132] For example, the reflective layer 20 may include a plurality of reflective portions 21 located in the spaced regions between adjacent light-emitting elements 10.

[0133] Figure 15 for Figure 14A The flowchart shown illustrates the fabrication process of the light-emitting substrate. Specifically, step S1 is as follows: Figure 15 As shown in Figure (a), the light-emitting element 10 is first transferred onto the substrate SUB by mass transfer; Step S2: as shown in Figure (a), the light-emitting element 10 is first transferred onto the substrate SUB by mass transfer; Figure 15 As shown in Figure (b), an encapsulation material layer is formed, and the encapsulation material layer is patterned using a photolithography process to form the first encapsulation layer 31 covering the light-emitting element 10; Step S3: as shown in Figure (b). Figure 15 As shown in Figure (c), a reflective material layer 20a is formed, and the reflective material layer 20a fills the gap area between adjacent light-emitting elements 10; Step S4: as shown in Figure (c). Figure 15 As shown in Figure (d), the reflective material layer 20a above the light-emitting element 10 is then removed using a plasma process. The light-emitting material remaining in the gap region between two adjacent light-emitting elements 10 is the reflective portion 21. The reflective portion 21 includes a second bottom surface facing the substrate SUB, a second top surface away from the substrate SUB, and a second side surface connected to the second bottom surface and facing the light-emitting element 10. Step S5: As shown in Figure (d), the reflective material layer 20a above the light-emitting element 10 is removed using a plasma process. Figure 15 As shown in Figure (e), a light-concentrating layer 40 is formed on the side of the multiple light-emitting elements 10 away from the substrate SUB by photolithography or nanoimprinting.

[0134] The material of the first encapsulation layer 31 may include photoresist. In step S2 above, the first encapsulation layer 31 can be patterned by exposure and development.

[0135] In the light-emitting substrate, the spacing between adjacent light-emitting elements 10 is usually very small, making it difficult to directly form the reflective layer 20 in the spacing area. In this embodiment, the first encapsulation layer 31 can be fabricated first, and then the first encapsulation layer 31 can be formed by full-layer coverage and plasma removal. This fabrication method has lower process requirements. Furthermore, the reflective layer 20 can reflect the light emitted from the side of the light-emitting element 10, thereby improving the utilization rate of the large-angle light emitted by the light-emitting element 10 and increasing the brightness of the front side of the light-emitting substrate. The light-concentrating layer 40 can further concentrate the light emitted by the light-emitting element 10 and the light reflected by the reflective layer 20, thereby further improving the brightness of the front side of the light-emitting substrate.

[0136] For example, such as Figure 14A As shown, the orthographic projection of the light-emitting element 10 onto the substrate SUB is located inside the first encapsulation layer 31. The first encapsulation layer 31 is closed and continuously surrounds the first side surface, that is, the first side surface is completely covered by the first encapsulation layer 31. The first encapsulation layer 31 extending along the first top surface of the light-emitting element 10 and the first encapsulation layer 31 extending along the first side surface are continuously distributed. Here, "continuously distributed" means that the first encapsulation layer 31 extending along the first top surface and the first encapsulation layer 31 extending along the first side surface are an integral structure.

[0137] It should be noted that the light-emitting element 10 may include the aforementioned first semiconductor layer 11, light-emitting layer 13, second semiconductor layer 12, and first and second electrodes. The first and second electrodes are located on the side of the first semiconductor layer 11 facing the substrate SUB. Furthermore, the orthographic projections of the first and second electrodes onto the substrate SUB are within the orthographic projection range of the first semiconductor layer 11 onto the substrate SUB. The first side can be the side of the overall structure formed by the first semiconductor layer 11, light-emitting layer 13, and second semiconductor layer 12. Since the first and second electrodes have a certain thickness, in the actual fabrication process, a certain amount of the first encapsulation layer 31 may remain on the side of the first semiconductor layer 11 facing the substrate SUB.

[0138] For example, such as Figure 14CAs shown, the first encapsulation layer 31 is divided into multiple first encapsulation portions 311, each corresponding to a light-emitting element 10. The first encapsulation portions 311 extend along the first top surface and the second side surface of the light-emitting element 10, respectively, with adjacent first encapsulation portions 311 spaced apart. That is, the first encapsulation layer 31 contains no other structures besides the multiple first encapsulation portions 311. In other examples, the first encapsulation layer 31 may include multiple first encapsulation portions 311, each corresponding to a light-emitting element 10. Adjacent first encapsulation portions 311 may also include connecting portions located between the reflective portion 21 and the substrate SUB. For example, during the fabrication of the first encapsulation layer 31, the encapsulation material layer corresponding to the reflective portion 21 may not be fully exposed, leaving a portion of encapsulation material as the connecting portion.

[0139] For example, there is no gap between the reflective portion 21 and the first encapsulation layer 31. That is, each position on the second side of the reflective portion 21 is in close contact with the first encapsulation layer 31 extending along the first side of the light-emitting element 10.

[0140] For example, the first encapsulation layer 31 extending along the first side is referred to as the first encapsulation sublayer (this first encapsulation sublayer is the portion of the first encapsulation portion 311 opposite to the first side), and the surface of the first encapsulation sublayer on the side away from the light-emitting element 10 is inclined toward the substrate SUB. That is, the distance from the surface of the first encapsulation sublayer on the side away from the light-emitting element 10 to the central axis of the light-emitting element 10 gradually decreases in the direction close to the substrate SUB. In this case, using Figure 15 The distance from the second side of the reflective part 21 formed during the manufacturing process to the central axis of the light-emitting element 10 gradually decreases in the direction close to the substrate SUB, which is beneficial for the reflective part 21 to reflect the light emitted from the side of the light-emitting element 10 toward the front of the light-emitting substrate.

[0141] For example, the thickness of the first encapsulation sublayer gradually decreases in the direction approaching the substrate SUB. For example, in Figure 15 In the fabrication process shown, the material of the first encapsulation layer 31 may include negative photoresist. During the exposure process, the negative photoresist at the edge of the light-emitting element 10 receives a relatively low exposure dose and a relatively weak cross-linking degree. Therefore, it is relatively easy to be eroded during the development process, thereby forming an approximately inverted trapezoidal shape.

[0142] For example, along the direction close to the substrate SUB, the cross-sectional area of ​​the reflective portion 21 parallel to the substrate SUB gradually increases, which helps the reflective portion 21 to reflect the light emitted from the side of the light-emitting element 10 toward the front of the light-emitting substrate.

[0143] For example, such as Figure 14AAs shown, the longitudinal section of the reflective portion 21 between two adjacent light-emitting elements 10 is trapezoidal, that is, the second side of the reflective portion 21 is an inclined plane; or, for example, the second side of the reflective portion 21 is a concave or convex arc surface.

[0144] like Figure 14D As shown, the reflective part 21 and the first encapsulation layer 31 overlap on the substrate SUB.

[0145] For example, a first included angle α is formed between the second side surface of the reflective portion 21 and the second bottom surface of the reflective portion 21. The first included angle α is approximately 60°, for example, between 50° and 70°, thereby better reflecting the emitted light from the side surface of the light-emitting element 10 toward the front surface of the light-emitting substrate. For example, the first included angle α is 50°, 60°, or 70°. It should be noted that the second side surface can be an inclined plane, or... Figure 14B As shown, this is a convex curved surface; of course, it can also be a concave curved surface. When the second side surface is curved, the first included angle α between the second side surface and the second bottom surface can be considered as: Figure 14B As shown in the diagram, the angle formed between the cross-section of the center position of the second side surface and the second bottom surface. The center position O satisfies the following condition: the distance between the center position O and the highest point of the second top surface in the thickness direction of the base SUB is equal to the distance between the center position O and the lowest point of the second bottom surface in the thickness direction of the base SUB.

[0146] For example, such as Figure 14C As shown, the first encapsulation layer 31 is divided into multiple first encapsulation portions 311, each corresponding to a light-emitting element 10. The first encapsulation portions 311 extend along the first top surface and the second side surface of the light-emitting element 10, respectively, with adjacent first encapsulation portions 311 spaced apart. That is, the first encapsulation layer 31 contains no other structures besides the multiple first encapsulation portions 311. In other examples, the first encapsulation layer 31 may include multiple first encapsulation portions 311, each corresponding to a light-emitting element 10. Adjacent first encapsulation portions 311 may also include connecting portions located between the reflective portion 21 and the substrate SUB. For example, during the fabrication of the first encapsulation layer 31, the encapsulation material layer corresponding to the reflective portion 21 may not be fully exposed, leaving a portion of encapsulation material as the connecting portion.

[0147] For example, the distance between the second top surface of the reflective portion 21 and the substrate SUB is greater than or equal to the distance between the surface of the light-emitting element 10 away from the substrate SUB and the substrate SUB. For instance, the distance between the second top surface and the substrate SUB is greater than or equal to the maximum distance between the surface of the second semiconductor layer 12 away from the substrate SUB and the substrate SUB, so that the reflective portion 21 can reflect as much light as possible emitted from the side of the light-emitting element 10.

[0148] For example, the distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the distance from the surface of the first encapsulation layer 31 away from the substrate SUB to the substrate SUB. For instance, the surface of the reflective layer 20 away from the substrate SUB is flush with the surface of the first encapsulation layer 31 away from the substrate SUB.

[0149] For example, in Figure 14A In the process, the orthographic projection of the reflective layer 20 onto the substrate SUB does not overlap with the orthographic projection of the light-emitting diode chip onto the substrate SUB.

[0150] For example, in Figure 14A In this structure, the light-concentrating layer 40 includes a plurality of light-concentrating lenses 41. The orthogonal projection of each light-concentrating lens 41 onto the substrate SUB covers the projection center of at least one light-emitting element 10, and the projection center of the light-emitting element 10 is the center of its orthogonal projection onto the substrate SUB. By configuring the light-concentrating lenses 41, the forward-emitted light from the light-emitting element 10 can be focused, thereby further improving the forward light emission brightness. For example, the orthogonal projection of each light-concentrating lens 41 onto the substrate SUB covers the orthogonal projection of at least one light-emitting element 10 onto the substrate SUB. For example, the orthogonal projection of each light-concentrating lens 41 onto the substrate SUB covers the orthogonal projection of one light-emitting element 10 onto the substrate SUB, and the center of the orthogonal projection of the light-concentrating lens 41 coincides with the center of the orthogonal projection of the light-emitting element 10.

[0151] For example, the first encapsulation layer 31 extending along the first top surface of the light-emitting element 10 is in contact with both the second semiconductor layer 12 and the light-concentrating layer 40. The refractive index of the first encapsulation layer 31 extending along the first top surface of the light-emitting element 10 is less than the refractive index of the second semiconductor layer 12 and greater than the refractive index of the light-concentrating layer 40, thereby improving the light extraction effect from the top surface of the light-emitting element 10. When the light-concentrating layer 40 includes multiple light-concentrating lenses 41, the refractive index of the light-concentrating layer 40 is the same as the refractive index of the light-concentrating lenses 41.

[0152] For example, the refractive index of the second semiconductor layer 12 is between 2.2 and 2.4, the refractive index of the condenser lens 41 is between 1.4 and 1.6, and the refractive index of the first encapsulation layer 31 can be set between 1.7 and 2.1, thereby improving the light extraction efficiency of the top surface of the light-emitting element 10. Preferably, the refractive index of the first encapsulation layer 31 is between 1.9 and 2.1.

[0153] For example, one of the first semiconductor layer 11 and the second semiconductor layer 12 is made of N-type GaN, and the other is made of P-type GaN; the material of the focusing lens 41 includes at least one of epoxy resin, polyurethane acrylate, and silicone resin; the first encapsulation layer 31 may include a nanocomposite modified material, for example, including a second matrix and high-refractive-index particles doped in the second matrix. The material of the second matrix includes, for example, photoresist, and the material of the high-refractive-index particles is, for example, TiO2 or ZrO2. When the first encapsulation layer 31 contains high-refractive-index particles, the doping concentration of the high-refractive-index particles is less than the doping concentration of the first particles in the reflective layer.

[0154] For example, a second encapsulation layer 32 may be disposed between the first encapsulation layer 31 and the condensing layer 40, wherein the refractive index of the second encapsulation layer 32 is less than or equal to the refractive index of the second semiconductor layer 12, and greater than or equal to the refractive index of the condensing lens 41. The second encapsulation layer 32 can play a planarization role, which is beneficial to the formation of the condensing lens 41.

[0155] For example, in Figure 14A In this process, the refractive index of the first encapsulation layer 31 can be set to be less than the refractive index of the second semiconductor layer 12 and greater than the refractive index of the condenser lens 41, thereby using the first encapsulation layer 31 to improve the light extraction efficiency of the top surface of the light-emitting element 10. In this case, the refractive index of the second encapsulation layer 32 can be the same as the refractive index of the condenser lens 41. For example, the second encapsulation layer 32 and the condenser lens 41 can be made of the same material. For example, the materials of the condenser lens 41 and the second encapsulation layer 32 both include at least one of epoxy resin, polyurethane acrylate, and silicone resin.

[0156] For example, the surface of the condenser lens 41 away from the substrate SUB is a convex arc surface with a curvature between 0.025 and 0.03.

[0157] For example, the refractive index of the condenser lens 41 is greater than or equal to 1.45.

[0158] For example, the thickness of the first encapsulation layer 31 extending along the first top surface of the light-emitting element 10 is no more than 30 micrometers, in order to facilitate the formation of the reflective portion 21 of the desired shape.

[0159] Figure 16A for Figure 15Figure (d) shows the relationship between light intensity and viewing angle for different values ​​of the first included angle. In the simulation, the refractive index of the second semiconductor layer 12 is 2.3, the refractive index of the first encapsulation layer 31 is 1.7–2.1, the distance from the surface of the reflective part 21 away from the substrate SUB is 6 micrometers, the distance from the surface of the light-emitting element 10 away from the substrate SUB is 6 micrometers, and the orthographic projection of the reflective layer 20 onto the substrate SUB does not overlap with the orthographic projection of the light-emitting element 10 onto the substrate SUB. The reflectivity of the reflective part 21 is greater than or equal to 60%. Different relationship curves were obtained through simulation by setting different values ​​of the first included angle. Figure 16A It can be seen that when the first included angle α of the reflective part 21 is 60°, it has a good focusing effect on the light of the light-emitting element 10, which increases the light intensity of the light-emitting substrate at a viewing angle of 0 degrees by 27%.

[0160] Therefore, Figure 14A In the light-emitting substrate shown, setting the first included angle α to about 60° can improve the forward light emission intensity of the light-emitting substrate.

[0161] Figure 16B for Figure 15 Figure (d) shows the relationship between light intensity and viewing angle for different heights of the reflective part 21. In the simulation, the refractive index of the second semiconductor layer 12 is 2.3, the refractive index of the first encapsulation layer 31 is 1.7–2.1, the distance from the surface of the light-emitting element 10 away from the substrate SUB is 6 micrometers, and the orthographic projection of the reflective layer 20 onto the substrate SUB does not overlap with the orthographic projection of the light-emitting element 10 onto the substrate SUB. The reflectivity of the reflective part 21 is greater than or equal to 60%, and the first included angle α is 60°. By setting the reflective part 21 to different heights (the height of the reflective part 21 is the distance from the surface of the reflective part 21 away from the substrate SUB to the substrate SUB), different relationship curves were obtained through simulation. Figure 16B It can be seen that when the height of the reflective portion 21 is greater than or equal to the distance from the surface of the light-emitting substrate to the substrate SUB, the forward light emission intensity increases, that is, the optical efficiency increases; and the greater the height of the reflective portion 21, the more significant the improvement in optical efficiency. The viewing angle of the light-emitting substrate converges to ±60 degrees.

[0162] This shows that, Figure 14A In the light-emitting substrate shown, setting the height of the reflective portion 21 to be greater than or equal to the distance from the surface of the light-emitting element 10 away from the substrate SUB to the substrate SUB can improve the optical efficiency of the light-emitting substrate.

[0163] Figure 16CThe images show the light emission effect before and after removing the reflective material above the light-emitting element 10 using a plasma process. Before the plasma process, the structure of the light-emitting substrate is as follows: Figure 15 As shown in Figure (c), a reflective material layer 20a of a certain thickness (e.g., about 2 micrometers) remains above the light-emitting element 10; after using plasma processing, the structure of the light-emitting substrate is as follows. Figure 15 As shown in Figure (d), the reflective material layer 20a above the light-emitting element 10 is removed. According to... Figure 16C It can be seen that when a certain thickness of reflective material layer 20a remains above the light-emitting element 10, the light intensity will decrease by 20%.

[0164] Figure 16D for Figure 15 Figure (e) shows the relationship between light intensity and viewing angle when the surface of the condenser lens 41 is set with different curvatures. In the simulation, the refractive index of the second semiconductor layer 12 is 2.3, the refractive index of the first encapsulation layer 31 is 1.7–2.1, the distance from the surface of the light-emitting element 10 away from the substrate SUB is 6 micrometers, and the orthographic projection of the reflective layer 20 onto the substrate SUB does not overlap with the orthographic projection of the light-emitting element 10 onto the substrate SUB. The reflectivity of the reflective part 21 is greater than or equal to 60%, the first included angle is 60°, and the height of the reflective part 21 is 10 micrometers. By setting different curvatures on the surface of the condenser lens 41 away from the substrate SUB, different relationship curves are obtained through simulation. Figure 16D It can be seen that when the curvature of the condenser lens 41 increases from 0.025 to 0.03, the increase in light intensity is not significant, but the viewing angle narrows noticeably from 40° to 25°. This is because the condenser lens 41 excessively concentrates the light that should be collected evenly in a local area, causing the light in other parts to be lost. As the curvature increases to 0.035, more light undergoes total internal reflection on the curved surface of the condenser lens 41, causing the light that should have continued to propagate through the condenser lens 41 to be trapped inside the condenser lens 41 and unable to exit normally. Therefore, in this embodiment, setting the curvature of the surface of the condenser lens 41 away from the substrate SUB between 0.025 and 0.03 can achieve a better light-gathering effect. Among them, when the curvature is 0.03, the light efficiency is improved by 53%.

[0165] Figure 16E for Figure 15 Figure (e) shows the relationship between light intensity and viewing angle for the structure with different refractive indices of the condenser lens 41. During simulation, the curvature of the surface of the condenser lens 41 away from the substrate SUB was 0.03, and the refractive indices of the condenser lens 41 were set to 1.45, 1.55, 1.65, 1.75, and 1.85, respectively. The refractive index of the first encapsulation layer 31 was set to 2.1. All other parameters are consistent with... Figure 16DThe same parameters were used in the simulation, and the simulation results are as follows: Figure 16E As shown in the diagram, the refractive index of the condensing lens 41 in this embodiment is greater than or equal to 1.45, which is beneficial for improving the light emission intensity of the light-emitting substrate. The higher the refractive index of the condensing lens 41, the greater the light convergence and the more significant the increase in light intensity. When n = 1.85, the light intensity is increased by 75% compared to the comparative light-emitting substrate. Therefore, in some examples, the refractive index of the condensing lens 41 can be set to a large value, such as 1.6 or higher, while ensuring that the refractive index of the first encapsulation layer 31 is greater than the refractive index of the condensing lens 41 and less than the refractive index of the second semiconductor layer. When a large refractive index is required for the condensing lens 41, a high-refractive-index material with high light transmittance, such as a nanocomposite modified material, can be used.

[0166] It should be noted that as the viewing angle increases, the light intensity gradually decreases. When the light intensity decreases to the light intensity at the center vertical position, the absolute value of the corresponding viewing angle is defined as the viewing angle.

[0167] Figure 14A In the illustrated embodiment, the reflective layer 20 is used to initially converge the light rays from a wide viewing angle, and then the condenser lens 41 further focuses the light rays, achieving high collimation and high efficiency. Compared to directly setting a condenser lens on the light-emitting side of the light-emitting element 10 without setting a reflective layer 21, Figure 14A The embodiment utilizes the reflective layer 20 to initially converge light from a wide viewing angle, which can prevent light leakage or crosstalk at a wide viewing angle.

[0168] It should be noted that, Figure 14A The example given is based on each condenser lens 41 corresponding to one light-emitting element 10. Of course, it can also be explained according to... Figure 10 The condenser lenses 41 are configured such that the orthogonal projection of each condenser lens 41 onto the substrate SUB covers the orthogonal projection of one light-emitting element group 101 onto the substrate SUB. Alternatively, it can be configured as follows: Figure 12 The condensing lens 41 is configured such that the condensing layer 40 includes multiple condensing lenses 41 of various sizes; the diameter of the condensing lens 41 is less than or equal to 1 / 4 of the width of the light-emitting element 10, and the height of the condensing lens 41 is less than half of its diameter; the orthographic projection of the light-emitting element 10 on the substrate SUB overlaps with the orthographic projection of the multiple condensing lenses 41 on the substrate SUB.

[0169] It should also be noted that, in Figure 14A The example described here is based on the premise that the orthographic projection of the reflective layer 20 on the substrate SUB and the orthographic projection of the light-emitting element 10 on the substrate SUB do not overlap. Of course, in other embodiments, the orthographic projection of the reflective layer 20 on the substrate SUB can also be described as follows: Figure 14AThe reflective layer 20 is configured to include multiple reflective portions 21 and multiple light-diffusing portions. The light-diffusing portions are located on the side of the light-emitting element 10 away from the substrate SUB, and the thickness of the light-diffusing portions is between 500 nm and 1000 nm. That is, in Figure 15 During the fabrication process, when the reflective material layer 20a is partially removed using plasma technology, a portion of the reflective material layer 20a above the light-emitting element 10 is retained, thereby achieving a uniform light distribution effect on the light-emitting elements 10 within the same light-emitting element group. For example, by retaining a uniform light distribution above the light-emitting element 10 and ensuring that the orthogonal projection of the condenser lens 41 onto the substrate SUB covers the orthogonal projection of a light-emitting element group 101 onto the substrate SUB, uniform light distribution is achieved on the light-emitting elements 10 within the same light-emitting element group, and crosstalk between different light-emitting element groups 101 is prevented.

[0170] Figure 17 This is a schematic diagram of the display substrate provided in Embodiment 7 of this disclosure. Figure 17 The display substrate shown is Figure 14A Similar, the difference lies in, in Figure 17 The display substrate also includes a cover plate 50 and a filler layer 60, with the filler layer 60 located on the side of the light-concentrating layer away from the substrate SUB. The cover plate 50 is located on the side of the filler layer 60 away from the substrate SUB. By providing the cover plate 50, the reliability of the light-emitting substrate packaging can be improved, as well as surface hardness, wear resistance, and waterproof and oxygen-proof performance. The cover plate 50 can be a glass cover plate.

[0171] For example, the refractive index of the filler layer 60 is less than that of the light-concentrating layer 40 to ensure the light-concentrating effect of the light-concentrating layer 40.

[0172] For example, the light transmittance of the filler layer 60 is greater than or equal to 97% to ensure the light emission effect of the light-emitting substrate.

[0173] For example, the light-emitting substrate can serve as the light-emitting substrate of a display panel. The light-emitting substrate further includes a light-shielding layer 70, located between the cover plate 50 and the filler layer 60. The orthographic projection of the light-shielding layer 70 onto the substrate SUB overlaps with the orthographic projection of the spacing region between adjacent light-emitting elements 10 onto the substrate SUB, but at least a portion of the orthographic projection of the light-emitting element 10 onto the substrate SUB does not overlap. The light-shielding layer 70 reduces the surface reflectivity of the display product and improves its contrast, thereby enhancing the display effect.

[0174] For example, such as Figure 17As shown, the light-concentrating layer 40 includes a plurality of light-concentrating lenses 41, and the orthogonal projection of each light-concentrating lens 41 onto the substrate SUB covers the projection center of at least one light-emitting element 10, wherein the projection center of the light-emitting element 10 is the center of the orthogonal projection of the light-emitting element 10 onto the substrate SUB. The closest distance H between the light-shielding layer 70 and the light-concentrating lens 41 in the thickness direction of the display substrate and the width D of the light-shielding layer 70 satisfy the following formula (1):

[0175] D=k*(P0-2*H*tanβ)(1)

[0176] Where P0 is the center-to-center distance between two adjacent light-emitting elements 10, β≤45°, and k is between 0.5 and 1.5. For example, k is between 0.7 and 1.3. For example, k is between 0.9 and 1.1; for example, k=0.5, or 0.6, or 0.7, or 0.8, or 0.9, or 1, or 1.1, or 1.2, or 1.3, or 1.4, or 1.5.

[0177] For example, 35°≤β≤45°, or 25°≤β<35°, or 15°≤β<25°, or 5°≤β<15°.

[0178] For example, β is the light emission angle of the light-emitting substrate. The brightness of the light emitted along the thickness direction of the light-emitting substrate is defined as the first brightness. The light emission angle of the light-emitting substrate refers to the maximum angle between the emitted light rays with a brightness greater than or equal to half of the first brightness and the thickness direction of the light-emitting substrate. For example, 35°≤β≤45°, or 25°≤β<35°, or 15°≤β<25°, or 5°≤β<15°.

[0179] When H, D, P0 and β satisfy the above formula, it can be ensured that the high-brightness light emitted by the condenser lens 41 can be smoothly emitted out of the cover plate 50, and the display product can be guaranteed to have a certain degree of blackness.

[0180] For example, the ratio of the projected area of ​​the light-shielding layer 70 on the substrate SUB to the area of ​​the light-emitting area of ​​the light-emitting substrate is greater than or equal to 80%. In this case, the surface reflectivity of the light-emitting substrate can be reduced to below 6% as measured by a CM700D color analyzer. Here, the light-emitting area of ​​the light-emitting substrate is the entire area where multiple light-emitting elements 10 are disposed; when the light-emitting substrate is used as a display substrate, the light-emitting area is the display area.

[0181] For example, the surface reflectivity of the light-emitting substrate can be further reduced by decreasing the transmittance of the filling layer 60. Where the ratio of the projected area of ​​the light-shielding layer 70 on the substrate SUB to the area of ​​the light-emitting region of the light-emitting substrate is greater than or equal to 80%, in this case, when the transmittance of the filling layer 60 is 98%, the surface reflectivity of the light-emitting substrate is 4.83%; when the transmittance of the filling layer 60 is 93%, the surface reflectivity of the light-emitting substrate is 4.1%; when the transmittance of the filling layer 60 is 80%, the surface reflectivity of the light-emitting substrate is 3.57%; and when the transmittance of the filling layer 60 is 55%, the surface reflectivity of the light-emitting substrate is 1.95%.

[0182] Figure 18 This is a schematic diagram of the display substrate provided in Embodiment 8 of this disclosure, as shown below. Figure 18 The light-emitting substrate shown is Figure 4 Similar, the difference is, Figure 18 The illustrated light-emitting substrate also includes a cover plate 50 and a fill layer 60. The fill layer 60 is located on the side of the light-emitting element 10 and the reflective layer 20 away from the substrate SUB, and the cover plate 50 is located on the side of the fill layer 60 away from the substrate SUB. That is, in some embodiments, the distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the distance from the surface of the light-emitting element 10 away from the substrate SUB to the substrate SUB. For example, the light-emitting element 10 includes a first semiconductor layer 11, a light-emitting layer 13, and a second semiconductor layer 12 sequentially disposed along a direction away from the substrate SUB (see [reference]). Figure 1 The distance from the surface of the reflective layer 20 away from the substrate SUB to the substrate SUB is greater than or equal to the maximum distance from the surface of the second semiconductor layer 12 away from the substrate SUB to the substrate SUB, thereby enabling more light emitted from the first side to be reflected by the reflective layer 20.

[0183] in addition, Figure 18 The light-emitting substrate further includes a plurality of baffles 80 located between the cover plate 50 and the light-concentrating layer 40. The orthographic projection of the baffles 80 onto the substrate SUB is located within the orthographic projection range of the spacing between adjacent light-emitting elements on the substrate SUB. The baffles 80 are used to reflect at least a portion of the light illuminating the light-emitting diode chip onto the baffles 80 in a direction away from the substrate SUB.

[0184] At least a portion of the filling layer 60 is located in the interval area between adjacent retaining walls 80.

[0185] For example, such as Figure 18As shown, a portion of the filler layer 60 is located in the gap area between adjacent retaining walls 80, and another portion is located on the side of the retaining wall 80 facing the base SUB. Alternatively, the filler layer 60 can be provided only in the gap area between adjacent retaining walls 80, and the side of the retaining wall 80 facing the base SUB can be free of the filler layer 60.

[0186] For example, the barrier 80 includes a fourth bottom surface facing the substrate SUB and a fourth side surface connected to the fourth bottom surface and facing the adjacent barrier 80. An angle A of 50° to 70° is formed between the fourth bottom surface and the fourth side surface, which is beneficial to reflect the light emitted from the light-emitting substrate toward the front of the light-emitting substrate.

[0187] The fourth side surface can be an inclined plane, or a concave or convex curved surface. When the fourth side surface is curved, the angle γ between the fourth bottom surface and the fourth side surface can be considered as follows: make a tangent at the center of the fourth side surface, and the angle γ between the tangent and the fourth bottom surface is such that the center of the fourth side surface satisfies the following condition: the vertical distance from the center of the fourth side surface to the highest point of the fourth top surface is equal to the vertical distance from the center of the fourth bottom surface to the lowest point of the fourth bottom surface.

[0188] For example, the distance h between the baffle 80 and the light-emitting element 10 in the thickness direction of the substrate SUB is less than or equal to (10*tanδ) micrometers. The surface of the baffle 80 facing the substrate SUB has a first edge close to the light-emitting element 10, and the first top surface of the light-emitting element 10 has a second edge close to the baffle 80. δ is the acute angle between the plane defined by the first and second edges and the plane containing the substrate SUB. When h is less than or equal to (10*tanδ) micrometers, it is guaranteed that even with alignment errors, the light from the light-emitting element 10 will not crosstalk to the position of adjacent light-emitting elements 10 through the gap below the baffle 80.

[0189] For example, the transmittance of the filler layer 60 can be greater than or equal to 97%, thereby improving the front light emission effect.

[0190] Figure 19 for Figure 18 The graphs showing the relationship between the light emission intensity and viewing angle of the light-emitting substrate in the example and the light-emitting substrate in the comparative example are shown. During the simulation, the reflectivity of the reflective part 21 is greater than or equal to 60%, and the angle between the fourth bottom surface and the fourth side surface of the barrier 80 is 60°. From... Figure 19 It can be seen that after setting the barrier 80, compared with the comparative light-emitting substrate, Figure 18 The viewing angle of the light-emitting substrate is reduced to 40°, and the brightness is increased by 30%.

[0191] It should be noted that, for Figure 8 , Figure 10 , Figure 12 , Figure 14AThe structures shown can all be referred to Figure 18 In this configuration, a baffle 80, a filling layer 60, and a cover plate 50 are provided on the side of the light-concentrating layer 40 away from the substrate SUB, thereby using the baffle 80 to further concentrate the light gathered by the light-concentrating layer 40.

[0192] In addition, for Figure 8 , Figure 10 , Figure 12 The structure shown can also be referred to Figure 17 The configuration involves placing a filling layer 60, a light-shielding layer 70, and a cover plate 50 on the side of the light-concentrating layer 40 away from the substrate SUB. For details, please refer to [link / reference needed]. Figure 17 Description of the light-shielding layer 70, the filling layer 60, and the cover plate 50 in the illustrated embodiment.

[0193] This disclosure also provides a display substrate that employs the light-emitting substrate described in any of the above embodiments.

[0194] This disclosure also provides a display panel, including the light-emitting substrate in any of the above embodiments, that is, the light-emitting substrate serves as the display substrate.

[0195] This disclosure also provides a display module, including a backlight module and a liquid crystal display panel located on the light-emitting side of the backlight module. The backlight module includes a light-emitting substrate as described in any of the above embodiments, which serves as a backlight substrate to provide a backlight source for the liquid crystal display panel.

[0196] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.

Claims

1. A light-emitting substrate, characterized in that, include: Base; A plurality of light-emitting elements are disposed on the substrate, the light-emitting elements including a first bottom surface facing the substrate, a first top surface away from the substrate, and a first side surface connecting the first bottom surface and the first top surface; A reflective layer, wherein the reflective layer is located at least in the spacing region between adjacent light-emitting elements; A light-concentrating layer, wherein the light-concentrating layer is located on the side of the light-emitting element away from the substrate; A first encapsulation layer extends along the first top surface of the light-emitting element and the first side surface of the light-emitting element, respectively; The reflective layer is disposed in contact with the first encapsulation layer between the adjacent light-emitting elements, and the first encapsulation layer extending along the first top surface of the light-emitting element is located between the light-concentrating layer and the light-emitting element.

2. The light-emitting substrate according to claim 1, characterized in that, The orthogonal projection of the light-emitting element onto the substrate is located inside the first encapsulation layer; The first encapsulation layer is closed and continuously surrounds the first side surface, and the first encapsulation layer extending along the first top surface of the light-emitting element and the first encapsulation layer extending along the first side surface are continuously distributed.

3. The light-emitting substrate according to claim 1, characterized in that, The surface of the first encapsulation layer extending along the first side away from the light-emitting element is inclined toward the substrate.

4. The light-emitting substrate according to claim 3, characterized in that, The reflective layer includes multiple reflective sections, which are located in the interval area between adjacent light-emitting elements; Along the direction close to the substrate, the cross-sectional area of ​​the reflective part parallel to the substrate gradually increases.

5. The light-emitting substrate according to claim 4, characterized in that, The reflective portion includes a second bottom surface facing the substrate, a second top surface away from the substrate, and a second side surface connected to the second bottom surface and facing the light-emitting element. The second side surface and the second bottom surface form a first angle, which is between 50° and 70°.

6. The light-emitting substrate according to claim 1, characterized in that, The first encapsulation layer is divided into multiple first encapsulation sections, each of which corresponds to one of the light-emitting elements, and adjacent first encapsulation sections are spaced apart.

7. The light-emitting substrate according to claim 1, characterized in that, The reflective layer includes a plurality of reflective portions located in the interval region between adjacent light-emitting elements. Each reflective portion includes a second bottom surface facing the substrate, a second top surface away from the substrate, and a second side surface connected to the second bottom surface and facing the light-emitting element. The distance between the second top surface and the substrate is greater than or equal to the distance between the surface of the light-emitting element on the side away from the substrate and the substrate.

8. The light-emitting substrate according to claim 1, characterized in that, The distance from the surface of the reflective layer away from the substrate to the substrate is greater than or equal to the distance from the surface of the first encapsulation layer away from the substrate to the substrate.

9. The light-emitting substrate according to claim 1, characterized in that, The orthographic projection of the reflective layer on the substrate does not overlap with the orthographic projection of the light-emitting element on the substrate, or... The reflective layer includes a reflective portion and a light-diffusing portion. The reflective portion is located in the spacer area between adjacent light-emitting elements, and the light-diffusing portion is located on the side of the light-emitting element away from the substrate. The thickness of the light-diffusing portion is between 500 nm and 1000 nm.

10. The light-emitting substrate according to claim 1, characterized in that, The material of the reflective layer includes a first matrix and first particles incorporated into the first matrix; The material of the first matrix includes resin; the first particles include at least one of titanium dioxide particles, zirconium dioxide particles, and silver nanoparticles.

11. The light-emitting substrate according to any one of claims 1 to 10, characterized in that, The light-concentrating layer includes a plurality of light-concentrating lenses, and the orthogonal projection of each light-concentrating lens on the substrate covers the projection center of at least one of the light-emitting elements, wherein the projection center of the light-emitting element is the center of the orthogonal projection of the light-emitting element on the substrate.

12. The light-emitting substrate according to claim 11, characterized in that, The surface of the condenser lens away from the substrate is a convex arc-shaped surface with a curvature between 0.025 and 0.

03.

13. The light-emitting substrate according to claim 11, characterized in that, Each of the light-emitting elements is used to emit light of one color; the light-emitting substrate includes multiple groups of light-emitting elements, each group of light-emitting elements includes multiple light-emitting elements, and the light-emitting colors of the multiple light-emitting elements in the same group of light-emitting elements include multiple colors; Wherein, the orthographic projection of each of the condensing lenses onto the substrate overlaps the orthographic projection of one of the light-emitting elements onto the substrate, or, The distance between two adjacent light-emitting elements in the same light-emitting element group is less than or equal to 15 micrometers, and the orthogonal projection of each condenser lens on the substrate covers the orthogonal projection of all light-emitting elements in at least one light-emitting element group on the substrate.

14. The light-emitting substrate according to claim 11, characterized in that, The light-concentrating layer includes multiple light-concentrating lenses of various sizes; the diameter of the light-concentrating lens is less than or equal to 1 / 4 of the width of the light-emitting element, and the height of the light-concentrating lens is less than half of its diameter; the orthographic projection of each light-emitting element on the substrate overlaps with the orthographic projection of the multiple light-concentrating lenses on the substrate.

15. The light-emitting substrate according to any one of claims 1 to 10, characterized in that, The light-emitting element includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially disposed along a direction away from the substrate; The first encapsulation layer is in contact with both the light-concentrating layer and the second semiconductor layer; the refractive index of the first encapsulation layer is less than that of the second semiconductor layer and greater than that of the light-concentrating layer.

16. The light-emitting substrate according to any one of claims 1 to 10, characterized in that, The light-emitting element includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer sequentially disposed along a direction away from the substrate; The light-emitting substrate further includes a second encapsulation layer, which is located between the light-concentrating layer and the first encapsulation layer. The second encapsulation layer is in contact with the light-concentrating layer. The refractive index of the second encapsulation layer is less than or equal to the refractive index of the second semiconductor layer and greater than or equal to the refractive index of the light-concentrating layer.

17. The light-emitting substrate according to any one of claims 1 to 10, characterized in that, The light-emitting substrate further includes; A filler layer is located on the side of the light-concentrating layer away from the substrate; A cover plate is located on the side of the filler layer away from the substrate.

18. The light-emitting substrate according to claim 17, characterized in that, The light-emitting substrate further includes: A light-shielding layer is located between the cover plate and the filling layer. The orthographic projection of the light-shielding layer on the substrate overlaps with the orthographic projection of the spacing area between adjacent light-emitting elements on the substrate, but does not overlap with at least a portion of the orthographic projection of the light-emitting elements on the substrate.

19. The light-emitting substrate according to claim 18, characterized in that, The light-concentrating layer includes a plurality of light-concentrating lenses, each of which projects its orthographic projection onto the substrate, covering the projection center of at least one of the light-emitting elements. The projection center of the light-emitting element is the center of its orthographic projection onto the substrate. The closest distance H between the light-shielding layer and the light-concentrating lens in the thickness direction of the substrate, and the width D of the light-shielding layer, satisfy the following: D = k × (P0 - 2 × H × tanβ); Wherein, P0 is the center-to-center distance between two adjacent light-emitting elements, β≤45°, and k is between 0.5 and 1.

5.

20. The light-emitting substrate according to claim 18, characterized in that, The ratio of the projected area of ​​the light-shielding layer on the substrate to the area of ​​the light-emitting area of ​​the light-emitting substrate is greater than or equal to 80%.

21. The light-emitting substrate according to claim 17, characterized in that, The light-emitting substrate further includes multiple baffles, which are located between the cover plate and the light-concentrating layer. The orthographic projection of the baffles on the substrate is within the orthographic projection range of the interval between adjacent light-emitting elements on the substrate. The barrier is used to reflect at least a portion of the light emitted by the light-emitting element toward a direction away from the substrate; At least a portion of the filling layer is located in the gap area between adjacent retaining walls.

22. The light-emitting substrate according to claim 21, characterized in that, The retaining wall includes a fourth bottom surface facing the base and a fourth side surface connected to the fourth bottom surface and facing an adjacent retaining wall, wherein the fourth bottom surface and the fourth side surface form an angle of 50° to 70°.

23. The light-emitting substrate according to claim 21, characterized in that, The distance h between the barrier and the light-emitting element in the thickness direction of the substrate is less than or equal to (10×tanδ) micrometers. The surface of the barrier facing the substrate has a first edge close to the light-emitting element, and the first top surface of the light-emitting element has a second edge close to the barrier. δ is the acute angle between the plane defined by the first edge and the second edge and the plane of the substrate.

24. A display substrate, characterized in that, The display substrate is a light-emitting substrate as described in any one of claims 1 to 23.

25. A display module, characterized in that, The device includes a backlight module and a liquid crystal display panel located on the light-emitting side of the backlight module, wherein the backlight module includes a light-emitting substrate as described in any one of claims 1 to 23.

Images