Red light anti-reflection optical filter applied to high-power laser

Abstract

The utility model discloses a red light anti-reflection optical filter applied to high-power laser, which is characterized by comprising a substrate layer positioned in the middle, a main film structure layer arranged at the upper part of the substrate layer, and a secondary film structure layer arranged at the lower part of the substrate layer, the main film structure layer is composed of 61 layers of high-refractive-index film structures and 61 layers of low-refractive-index film structures which are alternately overlapped outwards along one side close to the substrate layer, and the secondary film structure layer is composed of 6 layers of high-refractive-index film structures and 6 layers of low-refractive-index film structures which are alternately overlapped outwards along one side close to the substrate layer. The anti-reflection optical filter with the red light applied to the high-power laser can be suitable for different working wave bands, and high transmittance Tgt is obtained at 635 + / -10nm; the high transmittance Tgt is obtained when the transmittance is 98% and the transmittance is 915 + / -10nm; the high transmittance Tgt is obtained when the transmittance is 99% and the transmittance is 976 + / -10nm; the high reflectivity Rgt is obtained at the wave band of 1064 + / -10nm; and the anti-reflection function is realized by reflecting and transmitting laser with different wavelengths.

Description

Technical Field

[0001] This utility model relates to the field of manufacturing red light anti-reflection filters, specifically to a red light anti-reflection filter used in high-power lasers. Background Technology

[0002] Laser antireflective film is an optical element used to reduce laser reflection on optical surfaces. It significantly reduces reflectivity and increases transmittance by depositing a special antireflective film on the optical surface, thereby reducing energy loss and stray light interference.

[0003] Therefore, it is very important to manufacture a red-light anti-reflective filter that can withstand high-power lasers and avoid damage while being applicable. Utility Model Content

[0004] In order to overcome the above-mentioned defects of the prior art, the purpose of this utility model is to provide a red light anti-reflection filter for use in high-power lasers.

[0005] A red-light anti-reflection filter for use with high-power lasers includes:

[0006] The base layer is located in the middle, and the main membrane structure layer is disposed on the upper part of the base layer.

[0007] A sub-membrane structure layer is provided at the lower part of the substrate layer;

[0008] The main film structure layer consists of 61 layers of alternating high-refractive-index and low-refractive-index film structures stacked outwards from the side closest to the substrate layer.

[0009] The main membrane structure layer is as follows:

[0010] Base layer / 154.75nmH / 261.22nmmL / 56.1nmH / 70nmmL / 172.32nmH / 130.6nmmL / 249.85nmH / 126.85nmmL / 186.1nmH / 119.47nmmL / 213.89nmH / 128.57nmmL / 213.13nmH / 128.9nmmL / 204.26nmH / 114. 16nmL / 213.08nmH / 125.08nmL / 208.52nmH / 123.11nmL / 219.38nmH / 115.89nmL / 208.39nmH / 117.89nmL / 219.76nmH / 117.13nmL / 213.98nmH / 121.1nmL / 216.57nmH / 114.05nmL / 217.1 nmH / 117.59nmL / 212.32nmH / 116.99nmL / 220.76nmH / 122.42nmL / 209.06nmH / 115.59nmL / 2 15.07nmH / 119.88nmL / 206.92nmH / 126.14nmL / 216.9nmH / 121.47nmL / 202.04nmH / 121.66n mL / 206.91nmH / 125nmL / 210.69nmH / 139.1nmL / 197.63nmH / 117.1nmL / 182.53nmH / 145.85n mL / 231.46nmH / 119.81nmL / 189.71nmH / 131.96nmL / 238.59nmH / 134.62nmL / 95.23nmH / air;

[0011] The sub-film structure layer consists of six alternating layers of high-refractive-index and low-refractive-index film structures stacked outwards from the side closest to the substrate layer.

[0012] The submembrane structure layer is:

[0013] Base layer / 13.91 nmH / 68.95 nmH / 67.25 nmH / 23.3 nmH / 69.41 nmH / 143.84 nmH / air;

[0014] Where H represents a high refractive index film structure, L represents a low refractive index film structure, and the nanometers before H and L represent the thickness of the corresponding film structure.

[0015] In a preferred embodiment of this utility model, the high refractive index film structure is a film structure made of tantalum pentoxide (TA2O5).

[0016] In a preferred embodiment of this utility model, the low refractive index film structure is a film structure made of silicon dioxide (SiO2).

[0017] In a preferred embodiment of this utility model, the red light anti-reflection filter operates in wavelengths of 635±10nm, 915±10nm, 976±10nm, and 1064±10nm.

[0018] In a preferred embodiment of this utility model, the base layer is a quartz base layer.

[0019] In a preferred embodiment of this utility model, the quartz material is Herlix SUP-313.

[0020] The beneficial effects of this utility model are as follows:

[0021] A red-light anti-reflection filter for high-power lasers is applicable to different operating wavelengths, achieving high transmittance (T>98%) at 635±10nm, high transmittance (T>99%) at 915±10nm, and high transmittance (T>99%) at 976±10nm, and high reflectance (R>99.9%) in the 1064±10nm band. It achieves anti-reflection function by reflecting and transmitting lasers of different wavelengths. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of this utility model.

[0023] Figure 2 This is a schematic diagram illustrating the effect of an embodiment of the present invention. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. However, it should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit its scope. Furthermore, in the following descriptions, well-known structures and technologies have been omitted to avoid unnecessary confusion regarding the concept of this utility model.

[0025] In the description of this utility model, it should be noted that the terms "upper," "lower," "inner," "outer," "top / bottom," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description. They do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0026] like Figure 1The illustrated red-light anti-reflective filter for high-power lasers includes a centrally located base layer 100, which is made of quartz. In this embodiment, Herringbone SUP-313 quartz is used.

[0027] A main film structure layer 200 is disposed on the upper part of the substrate layer 100. The main film structure layer 200 consists of 61 layers of high refractive index film structure and low refractive index film structure alternately stacked outward along the side closest to the substrate layer. The main film structure layer 200 has the following film structure, with high refractive index film structure at both its front and rear ends:

[0028] Base layer / 154.75nmH / 261.22nmmL / 56.1nmH / 70nmmL / 172.32nmH / 130.6nmmL / 249.85nmH / 126.85nmmL / 186.1nmH / 119.47nmmL / 213.89nmH / 128.57nmmL / 213.13nmH / 128.9nmmL / 204.26nmH / 114. 16nmL / 213.08nmH / 125.08nmL / 208.52nmH / 123.11nmL / 219.38nmH / 115.89nmL / 208.39nmH / 117.89nmL / 219.76nmH / 117.13nmL / 213.98nmH / 121.1nmL / 216.57nmH / 114.05nmL / 217.1 nmH / 117.59nmL / 212.32nmH / 116.99nmL / 220.76nmH / 122.42nmL / 209.06nmH / 115.59nmL / 2 15.07nmH / 119.88nmL / 206.92nmH / 126.14nmL / 216.9nmH / 121.47nmL / 202.04nmH / 121.66n mL / 206.91nmH / 125nmL / 210.69nmH / 139.1nmL / 197.63nmH / 117.1nmL / 182.53nmH / 145.85n mL / 231.46nmH / 119.81nmL / 189.71nmH / 131.96nmL / 238.59nmH / 134.62nmL / 95.23nmH / air.

[0029] A submembrane structure layer 300 is provided at the lower part of the base layer 100.

[0030] The secondary film structure layer 300 consists of six alternating layers of high-refractive-index and low-refractive-index film structures stacked outwards from the side closest to the substrate layer 100. The secondary film structure layer has the following structure:

[0031] Base layer / 13.91nmH / 68.95nmmL / 67.25nmH / 23.3nmmL / 69.41nmH / 143.84nmmL / air.

[0032] Where H represents a high refractive index film structure, L represents a low refractive index film structure, and the nanometers before H and L represent the thickness of the corresponding film structure.

[0033] The "high" in the high refractive index film structure referred to in this invention means "high" compared to the low refractive index film structure.

[0034] In the embodiments of this utility model, the high refractive index film structure is a film structure made of tantalum pentoxide (TA2O5).

[0035] In the embodiments of this utility model, the low refractive index film structure is a film structure made of silicon dioxide (SiO2).

[0036] The red-light anti-reflective filter is suitable for different working wavelengths, specifically 635±10nm, 915±10nm, 976±10nm, and 1064±10nm, to ensure that the anti-reflective filter is suitable for the wavelength of the laser.

[0037] The red-light anti-reflection filter of this utility model is designed according to different incident angles of laser light and is suitable for working wavelengths of 635±10nm, 915±10nm, 976±10nm, and 1064±10nm.

[0038] Furthermore, the design of the red-light anti-reflection filter of this invention ensures that the anti-reflection filter can withstand the power density of high-power lasers, with a damage threshold ≥15J / cm². 2 .

[0039] The maximum laser power that this invention can withstand is approximately 6000W.

[0040] The red-light anti-reflective filter of this invention has functional applications in the working wavelength band of 635±10nm and can be used for low-energy indication.

[0041] The substrate layer uses Herlix SUP-313, a quartz substrate suitable for high-energy lasers, with low coefficient of expansion, few impurities, and good heat resistance, moisture resistance, and chemical stability.

[0042] The above shows and describes the basic principles, main features, and advantages of this utility model.

[0043] Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope. All such changes and modifications fall within the scope of this utility model as defined by the appended claims and their equivalents.

Claims

1. A red light preventing anti-reflection filter for high power laser, characterized in that, Comprise: a base layer in the middle, a main film structure layer is arranged on the upper part of the base layer, a secondary film structure layer is arranged on the lower part of the base layer; The main film structure layer is 61 layers of high refractive index film structure and low refractive index film structure which are alternately stacked outward along the side close to the base layer, The main film structure layer is as follows: Base layer 154.75nmH / 261.22nmL / 56.1nmH / 70nmL / 172.32nmH / 130.6nmL / 249.85nmH / 126.85nmL / 186.1nmH / 119.47nmL / 213.89nmH / 128.57nmL / 213.13nmH / 128.9nmL / 204.26nmH / 114.16nmL / 213.08nmH / 125.08nmL / 208.52nmH / 123.11nmL / 219.38nmH / 115.89nmL / 208.39nmH / 117.89nmL / 219.76nmH / 117.13nmL / 213.98nmH / 121.1nmL / 216.57nmH / 114.05nmL / 217.1nmH / 117.59nmL / 212.32nmH / 116.99nmL / 220.76nmH / 122.42nmL / 209.06nmH / 115.59nmL / 215.07nmH / 119.88nmL / 206.92nmH / 126.14nmL / 216.9nmH / 121.47nmL / 202.04nmH / 121.66nmL / 206.91nmH / 125nmL / 210.69nmH / 139.1nmL / 197.63nmH / 117.1nmL / 182.53nmH / 145.85nmL / 231.46nmH / 119.81nmL / 189.71nmH / 131.96nmL / 238.59nmH / 134.62nmL / 95.23nmH / Air; The secondary film structure layer is 6 layers of high refractive index film structure and low refractive index film structure which are alternately stacked outward along the side close to the base layer, The secondary film structure layer is: Base layer / 13.91nmH / 68.95nmL / 67.25nmH / 23.3nmL / 69.41nmH / 143.84nmL / Air; Wherein, H represents a high refractive index film structure, L represents a low refractive index film structure, and the nanometer number before H and L is the thickness of the corresponding film structure.

2. The red light preventing anti-reflection filter for high power laser as claimed in claim 1, wherein The high refractive index film structure is a film structure of tantalum pentoxide TA2O5 material.

3. The red light preventing anti-reflection filter for high power laser as claimed in claim 1, wherein The low refractive index film structure is a film structure of silicon dioxide SIO2 material.

4. The red light preventing anti-reflection filter for high power laser as claimed in claim 1, wherein The working waveband of the red light anti-reflection filter is 635±10nm, 915±10nm, 976±10nm, 1064±10nm.

5. The red light preventing anti-reflection filter for high power laser as claimed in claim 1, wherein The base layer is a base layer of quartz material.

6. A red anti-reflection filter for high power laser as claimed in claim 5, wherein, The quartz material is HELI SUP-313. The quartz material is HELI SUP-313.

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