Jet device and wafer edge etching equipment

Abstract

The utility model relates to a spraying device and wafer edge etching equipment, and the spraying device comprises a spraying body which comprises a first end extending towards a wafer edge region of a wafer; the liquid nozzle is located at the first end of the spraying body and used for spraying etching liquid to the wafer edge area of the wafer; and the gas nozzle is arranged at the first end of the spraying body, is positioned on one side, close to the central area of the wafer, of the liquid nozzle, and is used for spraying gas to form a gas barrier wall so as to prevent the etching liquid sprayed by the liquid nozzle from being sputtered to the central area of the wafer. According to the technical scheme of the utility model, the etching liquid can be prevented from being sputtered to the film layer or the pattern on the central area of the wafer to cause damage in the wafer edge etching process, and the improvement of the product yield is facilitated.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a jetting device and a crystal edge etching equipment. Background Technology

[0002] Thin film deposition is a crucial step in semiconductor integrated circuit manufacturing. During the semiconductor thin film deposition process, the thin film grown by equipment such as furnace tubes and chemical vapor deposition (CVD) covers not only the front side of the wafer but also the bevel region. In subsequent thin film growth or transport processes, stress mismatch and other issues can lead to film peeling, thus affecting the final yield.

[0003] To avoid yield loss caused by edge damage, the nozzle device in the edge etching process equipment is generally used to spray etching liquid onto the edge area of ​​the wafer to etch and remove the thin film located on the edge area of ​​the wafer. Utility Model Content

[0004] The problem solved by this utility model embodiment is to provide a spraying device and a crystal edge etching equipment, which can prevent the etching liquid from splashing onto the film or pattern on the central area of ​​the wafer during the crystal edge etching process and causing damage, thereby improving product yield.

[0005] To address the above problems, this utility model provides a spraying device, comprising:

[0006] The jetting body includes a first end extending toward the edge region of the wafer;

[0007] A liquid nozzle, located at the first end of the jetting body, is used to jet etching liquid onto the edge region of the wafer;

[0008] A gas nozzle is disposed at the first end of the injection body and on the side of the liquid nozzle near the center region of the wafer, for injecting gas to form a gas barrier wall to prevent the etching liquid injected by the liquid nozzle from splashing onto the center region of the wafer.

[0009] Optionally, the number of gas nozzles is multiple, and the multiple gas nozzles are arranged in close succession on one side of the liquid nozzle near the center region of the wafer, and the length of the arrangement of the multiple gas nozzles is greater than the length of the liquid nozzle along the arrangement direction of the multiple gas nozzles.

[0010] Optionally, the spraying assembly further includes:

[0011] A liquid passage is provided axially within the injection body and is connected to the liquid nozzle;

[0012] The liquid inlet is located at the second end of the jet body in the region away from the wafer edge, and is connected to the liquid passage and is used to connect to the liquid inlet pipe of the etching liquid.

[0013] A gas passage is arranged axially within the injection body and is connected to the gas nozzle;

[0014] An air inlet is located at the second end of the jet body in the region away from the wafer edge, and is connected to the gas passage and is used to connect to the gas inlet pipe.

[0015] Optionally, a plurality of gas nozzles are provided on one side of the liquid nozzle near the center region of the wafer, and the gas passages are provided in a one-to-one correspondence with the gas nozzles;

[0016] The injection body further includes a gas distribution section, located between the air inlet and the plurality of gas passages, and connected to the air inlet and the plurality of gas passages respectively.

[0017] Optionally, the number of the spraying components is multiple, and the spraying device further includes:

[0018] A mounting assembly, disposed above the wafer carrier disk, includes:

[0019] The fixing rod includes a first end extending toward the wafer and a second end extending away from the wafer, the first end of the fixing rod being used to fix the jetting device in place.

[0020] Multiple connecting rods are provided in a one-to-one correspondence with the multiple spraying components, and each includes a first end and a second end. The first ends of the multiple connecting rods are radially distributed along the circumference of the second end of the fixing rod, and the second ends of the multiple connecting rods extend toward the crystal edge region of the wafer. The multiple spraying components are respectively disposed at the second end of the corresponding connecting rod.

[0021] Optionally, the first ends of the plurality of connecting rods are evenly distributed circumferentially along the second end of the fixed rod.

[0022] Optionally, the spraying device further includes:

[0023] The controller is used to generate switch control signals;

[0024] A switch drive circuit is electrically connected to the controller, the first valve on the liquid inlet pipe corresponding to the plurality of injection components, and the second valve on the air inlet pipe, and is used to drive the opening or closing of the first valve on the liquid inlet pipe and the second valve on the air inlet pipe corresponding to at least some of the injection components according to the switch control signal.

[0025] Optionally, the cross-sections of the liquid nozzle and the gas nozzle are both circular.

[0026] Optionally, the diameter of the liquid nozzle is 4mm to 5mm, and the diameter of the gas nozzle is 2mm to 3mm.

[0027] Accordingly, this utility model embodiment also provides a crystal edge etching apparatus, including the jetting device as described in any of the above claims.

[0028] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0029] The spraying device provided in this embodiment includes: a spraying body, including a first end extending toward the edge region of the wafer; a liquid nozzle located at the first end of the spraying body for spraying etching liquid toward the edge region of the wafer; and a gas nozzle disposed at the first end of the spraying body and located on the side of the liquid nozzle near the center region of the wafer for spraying gas to form a gas barrier wall to prevent the etching liquid sprayed by the liquid nozzle from splashing to the center region of the wafer.

[0030] In the spraying device provided in this embodiment of the utility model, a gas nozzle disposed at the first end of the spraying body and located on the side of the liquid nozzle near the center region of the wafer forms a gas barrier wall by spraying gas, which can prevent the etching liquid sprayed by the liquid nozzle from splashing onto the center region of the wafer, thereby avoiding damage to the film or pattern on the center region of the wafer caused by the etching liquid splashing onto it, which is beneficial to improving product yield. Attached Figure Description

[0031] Figure 1 This is a schematic diagram showing the positional relationship between the spraying component and the wafer carrier disk in one embodiment of the spraying device in the present utility model technical solution;

[0032] Figure 2 This is a schematic diagram of the edge region and the center region of a wafer;

[0033] Figure 3 This is a schematic diagram of the spraying component in one embodiment of the spraying device in the technical solution of this utility model;

[0034] Figure 4 yes Figure 3 A schematic cross-sectional view of the spraying components in the spraying device shown.

[0035] Figure 5 This is a schematic diagram of another embodiment of the spraying device in the technical solution of this utility model;

[0036] Figure 6This is a schematic diagram showing the connection relationship between the controller, switch drive circuit, and the first valve on the liquid inlet pipe and the second valve on the air inlet pipe of the spraying device provided by this utility model. Detailed Implementation

[0037] As is known from the background technology, in existing etching devices, the etching liquid sprayed from the nozzle will splash onto the central area of ​​the wafer, causing damage to the film or pattern on the central area of ​​the wafer and reducing product yield.

[0038] To solve the above-mentioned technical problems, the spraying device provided in this utility model embodiment includes: a spraying body, including a first end extending toward the edge region of the wafer; a liquid nozzle located at the first end of the spraying body for spraying etching liquid toward the edge region of the wafer; and a gas nozzle disposed at the first end of the spraying body and located on the side of the liquid nozzle near the center region of the wafer for spraying gas to form a gas barrier wall to prevent the etching liquid sprayed by the liquid nozzle from splashing to the center region of the wafer.

[0039] In the spraying device provided in this embodiment of the utility model, a gas nozzle disposed at the first end of the spraying body and located on the side of the liquid nozzle near the center region of the wafer forms a gas barrier wall by spraying gas, which can prevent the etching liquid sprayed by the liquid nozzle from splashing onto the center region of the wafer, thereby avoiding damage to the film or pattern on the center region of the wafer caused by the etching liquid splashing onto it, which is beneficial to improving product yield.

[0040] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0041] Figure 1 This is a schematic diagram showing the positional relationship between the spraying component and the wafer carrier disk in one embodiment of the spraying device in the present utility model technical solution; Figure 2 This is a schematic diagram of the edge region and the center region of a wafer; Figure 3 This is a schematic diagram of the spraying component in one embodiment of the spraying device in the technical solution of this utility model; Figure 4 yes Figure 3 A schematic cross-sectional view of the spraying components in the spraying device shown.

[0042] Please refer to Figures 1 to 4A spraying device includes: a spraying body 110, including a first end extending toward a wafer edge region 310; a liquid nozzle 111 located at the first end of the spraying body 110 for spraying etching liquid toward the wafer edge region 310; and a gas nozzle 112 disposed at the first end of the spraying body 110 and located on the side of the liquid nozzle 111 near the center region 320 of the wafer 30 for spraying gas to form a gas barrier wall to prevent the etching liquid sprayed by the liquid nozzle 111 from splashing onto the center region of the wafer.

[0043] In this embodiment, the jetting body 110, the liquid nozzle 111 and the gas nozzle 112 constitute a jetting assembly 100. The jetting assembly 100 is used to jet etching liquid onto the edge region 310 of the wafer 30 located on the wafer carrier disk 20 to remove the film layer located on the edge region 310 of the wafer 30.

[0044] In this embodiment, the injection body 110 provides the structural foundation and spatial location for the liquid nozzle 111 and the gas nozzle 112.

[0045] In this embodiment, the jetting body 110 is made of a corrosion-resistant material, capable of withstanding the corrosion of the etching liquid during the crystal edge etching process. Specifically, the material of the jetting body 110 includes a quartz rod or ceramic.

[0046] In other embodiments, the jet body may also be made of other suitable metals or alloys, and there are no limitations on this.

[0047] In this embodiment, the jetting body 110 has a cylindrical structure. In other embodiments, the jetting body may also have a cuboid structure.

[0048] In this embodiment, the jetting body 110 is fixedly installed above the wafer carrier disk 20.

[0049] Specifically, the jetting body 110 includes a first end and a second end. The first end of the jetting body 110 extends toward the edge region 310 of the wafer 30, providing a structural basis and spatial position for the liquid nozzle 111 and the gas nozzle 112. The second end of the jetting body 110 extends away from the wafer 30 on the wafer carrier 20.

[0050] The liquid nozzle 111 is used to spray etching liquid onto the edge region 310 of the wafer 30 located on the wafer carrier 20 to perform an edge etching process on the edge region 310 of the wafer 30 located on the wafer carrier 20, thereby removing the film layer located on the edge region 310 of the wafer 30, thereby preventing the film layer on the edge region 310 of the wafer 30 from falling off during subsequent thin film growth or transport, which would lead to a decrease in product yield.

[0051] In this embodiment, the liquid nozzle 111 is disposed on the first end of the spray body 110 and faces the edge region 310 of the wafer 30 located on the wafer carrier 20, so that the liquid nozzle 111 sprays etching liquid onto the edge region 310 of the wafer 30 located on the wafer carrier 20.

[0052] In this embodiment, the liquid nozzle 111 has a circular cross-section.

[0053] Accordingly, the diameter of the cross-section of the liquid nozzle 111 can be set according to the requirements of the crystal edge etching process. As an example, the diameter of the cross-section of the liquid nozzle 111 is 4mm to 5mm.

[0054] It is understood that the diameter of the cross-sectional circle of the liquid nozzle can also be other sizes, as long as the etching liquid sprayed by the liquid nozzle can cover the edge region of the wafer radially, and there is no limitation here.

[0055] In other embodiments, the cross-section of the liquid nozzle can also be set to other suitable shapes according to actual needs, and there are no limitations here.

[0056] The gas nozzle 112 is used to spray gas to form a gas barrier wall to prevent the etching liquid sprayed by the liquid nozzle 111 from splashing onto the central region 320 of the wafer 30.

[0057] In this embodiment, the gas nozzle 112 is located on the first end of the injection body 110 so that it can inject gas toward the wafer 30 on the wafer carrier 20.

[0058] In this embodiment, the gas nozzle 112 is located on the side of the liquid nozzle 111 near the center region 320 of the wafer 30. This means that on the projection plane parallel to the wafer carrier disk 20, the distance between the projection of the gas nozzle 112 and the projection of the center point of the wafer 30 on the wafer carrier disk 20 is less than the distance between the projection of the liquid nozzle 112 and the projection of the center point of the wafer 30 on the wafer carrier disk 20.

[0059] The gas nozzle 112 is located on one side near the center region 320 of the wafer 30, so that the gas barrier can prevent the etching liquid sprayed by the liquid nozzle 111 from splashing onto the center region 320 of the wafer 30 on the wafer carrier 20, thereby protecting the film or pattern on the center region 320 of the wafer 30 on the wafer carrier 20.

[0060] In this embodiment, the injection body 110 further includes a liquid passage (not shown) disposed axially within the injection body 110, and the liquid passage is connected to the liquid nozzle 111.

[0061] The liquid passage serves as a delivery channel for the etching liquid within the jet body 110, and is used to supply the etching liquid to the liquid nozzle 111.

[0062] In this embodiment, the spray body 110 further includes a liquid inlet 115 disposed at the second end of the spray body 110, and the liquid inlet 115 is connected to the liquid passage.

[0063] The liquid inlet 115 is used to connect to the liquid inlet pipe of the etching liquid so as to transport the etching liquid in the liquid inlet pipe to the liquid passage, and then spray it to the crystal edge region 310 of the wafer 30 through the liquid nozzle 111.

[0064] In this embodiment, the gas barrier wall formed by the gas nozzle 112 spraying gas covers at least the critical region between the edge region 310 and the center region 320 of the wafer 30 on the wafer carrier disk 20 in the radial direction, so as to block the etching liquid sprayed by the liquid nozzle 111 in the radial direction.

[0065] At the same time, the gas barrier wall formed by the gas nozzle 112 spraying gas also covers the etching liquid sprayed by the liquid nozzle 111 in the circumferential direction, so as to block the etching liquid sprayed by the liquid nozzle 111 in the circumferential direction.

[0066] In this embodiment, the gas nozzle 112 has a circular cross-section.

[0067] Accordingly, the circular diameter of the cross-section of the gas nozzle 112 can be set according to the requirements for blocking the etching liquid ejected from the liquid nozzle 111. As an example, the circular diameter of the cross-section of the gas nozzle 112 is 2mm to 3mm.

[0068] In this embodiment, a plurality of gas nozzles 112 are disposed on the side of the liquid nozzle 111 near the center region 320 of the wafer 30. The plurality of gas nozzles 112 are arranged sequentially and closely adjacent to each other along a straight line on the side of the liquid nozzle 111 near the center region 320 of the wafer 30, and the length of the arrangement of the plurality of gas nozzles 112 is greater than the length of the liquid nozzle 111 along the arrangement direction of the plurality of gas nozzles 112. This allows the gas barrier formed by the gas ejected by the plurality of gas nozzles 112 to constitute a stable airflow barrier, which can completely block the etching liquid ejected by the liquid nozzle 111 in the circumferential direction on the side of the liquid nozzle 111 near the center region of the wafer.

[0069] In other embodiments, the plurality of gas nozzles may also be circumferentially arranged around at least the periphery of a half-region of the liquid nozzle near the center region of the wafer.

[0070] In other embodiments, the number of gas nozzles may also be one. Accordingly, the diameter of the gas nozzle is larger than the diameter of the liquid nozzle.

[0071] In this embodiment, the gas sprayed by the gas nozzle 112 is a gas that does not have an etching effect on the wafer, so as to avoid damaging the pattern or film layer in the central region 320 of the wafer 30.

[0072] In this embodiment, the injection body 110 further includes a gas passage 114 (e.g., gas passage 114) disposed axially within the injection body 110. Figure 4 As shown in the figure, the gas passage 114 is connected to the gas nozzle 112.

[0073] The gas passage 114 serves as a gas delivery channel within the injection body 110 to form a gas barrier wall, and is used to deliver gas to the liquid nozzle 111.

[0074] In this embodiment, the injection body 110 further includes an air inlet 116 disposed at the second end of the injection body 110 (e.g., Figure 4 As shown in the figure, the air inlet 116 is connected to the gas passage 114.

[0075] The air inlet 116 is used to connect to the gas inlet pipe to guide the gas in the inlet pipe to the gas passage 114, and then spray it onto the crystal edge region 310 of the wafer 30 through the gas nozzle 112.

[0076] In this embodiment, a plurality of gas nozzles 112 are provided on one side of the liquid nozzle 111 near the center region 320 of the wafer 30, and a plurality of gas passages 114 are provided axially within the injection body 110, and each of the plurality of gas nozzles 112 corresponds to one of them.

[0077] Accordingly, the injection body 110 further includes: an air distribution section 118 (such as...) Figure 4 As shown, it is located between the air inlet 116 and the plurality of gas passages 114, and is connected to the air inlet 116 and the plurality of gas passages 114 respectively.

[0078] The gas distribution section 118 is used to uniformly guide the gas delivered by the air inlet 116 into multiple gas passages 114, and then spray it through multiple gas nozzles 112 at least into the critical region between the edge region 310 and the center region 320 of the wafer 30.

[0079] Figures 5 to 6 A schematic diagram of another embodiment of the spraying device provided by this utility model is shown. The similarities between this embodiment and the foregoing embodiments will not be repeated here.

[0080] Please refer to the reference. Figures 5 to 6 The difference between this embodiment and the previous embodiment is that the number of spraying components 100 is multiple. Correspondingly, the spraying device also includes: a fixed mounting component 200, which is disposed above the wafer carrier disk 20 and includes: a fixed rod 210; multiple connecting rods 220, which are disposed one-to-one with the multiple spraying components 100 and each includes a first end and a second end. The first end of the connecting rod 220 is fixedly mounted to the fixed rod 210 and is radially distributed along the circumference of the fixed rod 210. The second end of the connecting rod 220 extends toward the edge region 310 of the wafer 30 on the wafer carrier disk 20. The multiple spraying components 10 are respectively fixedly mounted on the second end of the corresponding connecting rod 220.

[0081] The fixed mounting assembly 200 is used to provide a stable mounting structure, thereby enabling the fixed installation of multiple spraying assemblies 100.

[0082] The fixing rod 210 is used to fix the mounting assembly 200 and to directly provide a bearing position for the plurality of connecting rods 220.

[0083] Specifically, the fixing rod 210 includes a first end extending toward the wafer carrier disk 20 and a second end extending vertically away from the wafer carrier disk 20. The first end of the fixing rod 210 is used to fix the mounting assembly 200 within the die edge etching equipment, and the second end of the fixing rod 210 is used to directly provide a bearing position for the plurality of connecting rods 220.

[0084] The plurality of connecting rods 220 are components in the fixed mounting assembly 200 that provide direct bearing positions for the plurality of spraying assemblies 110.

[0085] In this embodiment, the plurality of connecting rods 220 include a first end and a second end. The first ends of the plurality of connecting rods 220 are evenly distributed along the circumference of the fixing rod 210, and the second ends of the plurality of connecting rods 220 extend toward the edge region 310 of the wafer 30 located on the wafer carrier disk 20. The plurality of spraying assemblies 110 are respectively fixedly installed on the second ends of the corresponding connecting rods 220.

[0086] This configuration allows the etching liquid sprayed by the liquid nozzles 111 in the plurality of spraying components 110 to uniformly and completely cover the edge region 310 of the wafer 30 on the wafer carrier disk 20, which is beneficial to improving the stability and uniformity of the edge etching process, and to the complete removal of the film layer on the edge region 310 of the wafer 30, thereby improving the product yield.

[0087] The number of spraying components 110 can be set according to actual needs. Specifically, the number of spraying components 110 is such that the etching liquid sprayed by the spraying components 110 can fully cover the edge region 310 of the wafer 30 in both radial and circumferential directions. As an example, the number of connecting rods is 7.

[0088] Accordingly, the number of connecting rods 220 is also 7.

[0089] like Figure 6 As shown, in this embodiment, the spraying device further includes: a controller 400 for generating a switch control signal; and a switch drive circuit 500 electrically connected to the controller 400, a first valve 610 disposed on the liquid inlet pipe of the etching liquid, and a second valve 620 disposed on the gas inlet pipe, for driving the opening or closing of the first valve 610 on the liquid inlet pipe and the second valve 620 on the gas inlet pipe corresponding to at least a portion of the spraying components 100 according to the switch control signal.

[0090] The controller 400 is used to generate corresponding switch control signals based on the user's control signals. As an example, the controller 400 is a programmable logic controller (PLC).

[0091] The switch drive circuit 500, as the actuator for opening or closing the first valve 610 and the second valve 620, is used to generate a corresponding drive voltage or drive current according to the control signal of the controller, so as to drive the opening or closing of the first valve 610 on the corresponding liquid inlet pipe and the second valve 620 on the corresponding air inlet pipe of some or all of the injection assemblies 100.

[0092] The structure of the switch drive circuit 500 can be configured by those skilled in the art according to the driving requirements of the first valve and the second valve, and is not limited herein.

[0093] By means of the controller 400 and the switch drive circuit 500, the synchronous switching of liquid nozzles 111 and gas nozzles 112 on some or all of the jetting components 100 can be realized, thereby enabling the etching of part or all of the edge region 310 of the wafer 30, and meeting the diverse needs of the edge etching process.

[0094] This utility model embodiment also provides a crystal edge etching apparatus, including the jetting device provided in the foregoing embodiment. The jetting device provided in this utility model embodiment is described in the foregoing section and will not be repeated here.

[0095] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A spraying device, characterized in that The application relates to a liquid and gas spraying device for a wafer etching machine. The device comprises: a spraying body, which comprises a first end extending towards a wafer edge region; a liquid nozzle arranged at the first end of the spraying body for spraying etching liquid towards the wafer edge region; 2. The spray device of claim 1, wherein a plurality of gas nozzles arranged at the first end of the spraying body and located on one side of the liquid nozzle close to a wafer center region, for spraying gas to form a gas barrier wall to prevent the etching liquid sprayed by the liquid nozzle from splashing into the wafer center region.

3. The spray device of claim 1, wherein The plurality of gas nozzles are arranged in a straight line and in sequence next to each other on the one side of the liquid nozzle close to the wafer center region, and the arrangement length of the plurality of gas nozzles is greater than the length of the liquid nozzle along the arrangement direction of the plurality of gas nozzles. The spraying body further comprises: a liquid passage arranged in the spraying body in an axial direction and in communication with the liquid nozzle; a liquid inlet hole arranged at a second end of the spraying body away from the wafer edge region, in communication with the liquid passage, and used for connecting with a liquid inlet pipeline of the etching liquid; a gas passage arranged in the spraying body in an axial direction and in communication with the gas nozzle; 4. The spray device of claim 3, wherein a gas inlet hole arranged at the second end of the spraying body away from the wafer edge region, in communication with the gas passage, and used for connecting with a gas inlet pipeline of the gas. The liquid nozzle is provided with the plurality of gas nozzles on one side close to the wafer center region, and the gas passage is arranged in one-to-one correspondence with the gas nozzle; 5. The injection device of any of claims 1 to 4, wherein, The spraying body further comprises a gas distribution part arranged between the gas inlet hole and the plurality of gas passages and in communication with the gas inlet hole and the plurality of gas passages respectively. The spraying body, the gas nozzle and the liquid nozzle form a spraying assembly, and the number of the spraying assemblies is plural, and the spraying device further comprises: a fixed mounting assembly arranged above a wafer carrier disc, which comprises: a fixed rod comprising a first end extending towards the wafer and a second end extending away from the wafer, the first end of the fixed rod being used for fixed mounting of the spraying device; 6. The spray device of claim 5, wherein, a plurality of connecting rods arranged in one-to-one correspondence with the plurality of spraying assemblies and respectively comprising a first end and a second end, the first ends of the plurality of connecting rods being distributed in a radial manner along the circumferential direction of the second end of the fixed rod, and the second ends of the plurality of connecting rods respectively extending towards the wafer edge region; and the plurality of spraying assemblies are respectively arranged at the second ends of the corresponding connecting rods.

7. The spray device of claim 5, wherein The first ends of the plurality of connecting rods are uniformly distributed along the circumferential direction of the second end of the fixed rod. Further comprising: a controller for generating a switching control signal; 8. The spray device of claim 2, wherein, a switching drive circuit electrically connected with the controller, a first valve on the liquid inlet pipeline corresponding to the plurality of spraying assemblies and a second valve on the gas inlet pipeline, and used for driving the opening or closing of the first valve on the liquid inlet pipeline and the second valve on the gas inlet pipeline of at least part of the spraying assemblies according to the switching control signal.

9. The spray device of claim 8, wherein, The liquid nozzle and the gas nozzle are circular in cross section respectively. The diameter of the liquid nozzle is 4mm-5mm, and the diameter of the gas nozzle is 2mm-3mm.

10. A crystal edge etching apparatus, characterized by comprising: The injection device according to any one of claims 1 to 9.

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