Power semiconductor module
By using an integrated substrate design and an integrated temperature sampling module, the problems of complex power semiconductor module design and cumbersome assembly are solved, achieving high integration and real-time temperature monitoring, which is suitable for automotive-grade motor controllers.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-14
- Publication Date
- 2026-03-06
AI Technical Summary
Existing power semiconductor modules are complex in design, have low integration, and are cumbersome to assemble.
It adopts an integrated substrate design, integrating chips, electrical connection terminals and connectors, integrating a temperature sampling module, fixing it to the substrate with metal solder, and using side frames and cover plates to form a sealed structure, integrating current sensors and heat dissipation pins, simplifying the assembly process.
It improves integration, reduces assembly difficulty, enables real-time temperature monitoring, enhances application performance, and is suitable for automotive-grade motor controllers.
Smart Images
Figure CN223979119U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of electronic power technology, and in particular to a power semiconductor module. Background Technology
[0002] A semiconductor power module is an integrated unit of semiconductor devices used to process and control high-power electrical energy, playing a crucial role in power electronic equipment. To meet the demands of various applications, the packaging structure of power semiconductor modules has continuously evolved; however, some power semiconductor modules suffer from complex designs, large space requirements, low integration, and cumbersome assembly. Utility Model Content
[0003] In order to overcome the above-mentioned technical defects, the purpose of this utility model is to provide a power semiconductor module to solve the problems of complex design and cumbersome assembly of some existing power semiconductor modules.
[0004] This utility model discloses a power semiconductor module.
[0005] Includes substrate, base plate, side frame, and cover plate:
[0006] The substrate is a monolithic substrate, and a plurality of chips, electrical connection terminals and / or connectors are disposed on the substrate;
[0007] The substrate is fixed to the base plate by metal solder;
[0008] The side frame surrounds the substrate and is connected to the substrate;
[0009] The cover plate is connected to the side frame and is positioned above the substrate.
[0010] Preferably, at least one temperature sampling module is integrated on the substrate for monitoring the temperature of the chip.
[0011] Preferably, any one of the chips is connected to a temperature sampling module via the connector.
[0012] Preferably, the temperature sampling module is integrated into the chip.
[0013] Preferably, a temperature sampling module is independently disposed on the substrate for bypassing NTC sampling.
[0014] Preferably, the connector includes a metal bonding wire and a connecting wire.
[0015] Preferably, the side frame has connecting holes at its four circumferential corners;
[0016] The connecting hole extends through a screw and connects to the substrate.
[0017] Preferably, a sealing element is provided on the side of the side frame that connects to the substrate;
[0018] And / or, the side frame is filled with a material that achieves electrical insulation.
[0019] Preferably, the substrate includes a ceramic layer and an upper copper layer and a lower copper layer located on both sides of the ceramic layer;
[0020] The substrate has several trenches that isolate the individual chips.
[0021] Preferably, the power semiconductor module also integrates a current sensor and / or heat dissipation fins.
[0022] Compared with existing technologies, the above technical solution has the following advantages:
[0023] This utility model provides a power semiconductor module including a substrate, a base plate, a side frame, and a cover plate, integrating chips, connectors, etc. The integrated substrate design has a high degree of integration, a simple structure, and low assembly difficulty, which solves the problems of complex design, low integration, and cumbersome assembly of some existing power semiconductor modules. Furthermore, a temperature sampling device is integrated to monitor the chip junction temperature / the real-time temperature of the entire module in real time, thereby improving the application effect. Attached Figure Description
[0024] Figure 1 This is a schematic diagram of the structure of an embodiment of the power semiconductor module described in this utility model;
[0025] Figure 2 This is a schematic diagram illustrating the structure of the substrate in an embodiment of the power semiconductor module described in this utility model;
[0026] Figure 3 This is a schematic diagram illustrating the structure of the accommodating area for placing the temperature sampling module in an embodiment of the power semiconductor module described in this utility model;
[0027] Figure 4 This is a schematic diagram of an example structure of a power semiconductor module embodiment of the present invention, in which a temperature sampling module is arranged.
[0028] Figure 5 This is a schematic diagram of another example of a power semiconductor module embodiment of the present invention, in which a temperature sampling module is arranged.
[0029] Figure 6 This is a schematic diagram of another example of a power semiconductor module embodiment of the present invention, in which a temperature sampling module is arranged.
[0030] Figure label:
[0031] 1-Substrate; 2-Substrate; 3-Side frame; 4-Cover plate; 5-Chip; 61-Signal terminal; 62-Power terminal; 7-Connector; 8-Temperature sampling module; 9-Connection hole. Detailed Implementation
[0032] The advantages of this utility model are further illustrated below with reference to the accompanying drawings and specific embodiments.
[0033] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this disclosure. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this disclosure as detailed in the appended claims.
[0034] The terminology used in this disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The singular forms “a,” “the,” and “the” as used in this disclosure and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any and all possible combinations of one or more of the associated listed items.
[0035] It should be understood that although the terms first, second, third, etc., may be used in this disclosure to describe various information, such information should not be limited to these terms. These terms are used only to distinguish information of the same type from one another. For example, without departing from the scope of this disclosure, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the word "if" as used herein may be interpreted as "when," "when," or "in response to determination."
[0036] In the description of this utility model, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0037] In the description of this utility model, unless otherwise specified and limited, it should be noted that the terms "installation", "connection" and "linking" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, or internal connections between two components. They can be direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms according to the specific circumstances.
[0038] In the following description, the use of suffixes such as "module," "part," or "unit" to denote elements is solely for the purpose of illustrating this invention and has no specific meaning in itself. Therefore, "module" and "part" can be used interchangeably.
[0039] Example: This utility model discloses a power semiconductor module that can be used as the core current conversion unit in an automotive-grade motor controller. It features high integration, a small footprint, and simple assembly, making it suitable for motor controllers with specific power levels and size requirements. For details, please refer to [link / reference]. Figures 1-2 The system includes a substrate 1, a base 2, a side frame 3, and a cover plate 4. The base 2 is an integral substrate 2, and the base 2 is provided with a plurality of chips 5, electrical connection terminals (such as signal terminals 61 and / or power terminals 62) and / or connectors 7. The base 2 is fixed to the base 1 by metal solder. The side frame 3 surrounds the base 2 and is connected to the base 1. The cover plate 4 is connected to the side frame 3 and is located above the base 2.
[0040] In this embodiment, an integrated substrate 2 is used to integrate the chip 5, electrical connection terminals, and / or connectors 7 onto a single substrate 2 to improve integration efficiency and reduce volume. The substrate 2 is fixed to the substrate 1 with metal solder to maintain a certain level of conductivity. Specifically, the substrate 2 can be fixedly connected to the substrate 1 using materials such as solder sheets, solder paste, or sintered silver / copper to provide a heat conduction path. It is understood that components such as the chip 5, electrical connection terminals, and / or connectors 7 (which may also include built-in current sharing resistors, etc.) can also be fixedly connected to the substrate 2 using materials such as solder sheets, solder paste, sintered silver / copper, or ultrasonic bonding processes, thereby enabling the application of various power semiconductor modules.
[0041] Specifically, the substrate 1, side frame 3, and cover plate 4 can be connected using existing common connection structures or welding processes. For example, in this embodiment, to reduce assembly difficulty, the side frame 3 has connection holes 9 at its four corners. The connection holes 9 are extended by screws to connect to the substrate 1; that is, screws (or detachable components such as screws or screw rods with nuts) pass through the side frame 3 and are fixedly connected to the substrate 1. The cover plate 4 can be connected to the side frame 3 by screws, or it can be directly snapped / interference-fitted to the side frame 3. Other alternative connection structures that do not affect the application of the module are also acceptable.
[0042] Specifically, the aforementioned chip 5 includes, but is not limited to, IGBT chip 5 and / or FRD chip 5, and the aforementioned connector 7 includes, but is not limited to, metal bonding wires and connecting wires, such as aluminum bonding wires. It is understood that, due to the highly integrated setup, if the emitter on the chip 5 is connected to the substrate 2 by bonding at least one aluminum bonding wire, the aluminum bonding wire can be connected to the chip 5 and the substrate 2 with the shortest distance. Alternatively, the aluminum bonding wires can be arranged in parallel or in sections to reduce the risk caused by entanglement or crossing between the connectors 7 and improve the safety during use.
[0043] In this embodiment, substrate 1 is placed at the bottom layer, and substrate 2 is arranged on it. Side frame 3 is connected to substrate 1 around substrate 2. A sealing material, such as silicone or rubber, can be provided on the side of side frame 3 connected to substrate 1, so that substrate 2 and components such as chip 5 are located within the sealed space formed by cover plate 4, side frame 3, and substrate 1. Optionally, the side frame 3 can be filled with a material that provides electrical insulation, thereby improving the stability and safety of the module. Specifically, materials such as silicone or epoxy resin can be used. Furthermore, a cover plate 4 (which may have through holes for electrical connection terminals to extend) is added to provide some dust and mechanical protection.
[0044] In this embodiment, the substrate 2 includes a ceramic layer and an upper copper layer and a lower copper layer located on both sides of the ceramic layer; since it is an integral substrate 2, an integral ceramic layer is used, and the ceramic material may include toughened alumina (ZTA) or silicon nitride (Si3N4). The substrate 2 has a plurality of trenches that isolate each chip 5 to achieve electrical isolation between each chip 5 (such as corresponding to six bridge arms).
[0045] Specifically, as exemplified above, six chips 5 (six IGBTs and six FRDs (fast recovery diodes)) are arranged on substrate 2. The fast recovery diodes work in conjunction with the IGBT chips 5 to perform rectification and freewheeling in the switching power supply; to perform limiting and signal switching in the high-frequency circuit; and to perform protection and voltage regulation in the circuit. The six chips 5 are arranged in two rows and three columns on substrate 2 and are symmetrically distributed. The fast recovery diodes are arranged on one side relative to the center, and the IGBT chips 5 are arranged on one side relative to the outer periphery of substrate 2, and are connected by aluminum bonding wires.
[0046] In this embodiment, at least one temperature sampling module 8 (such as a temperature sampling resistor / circuit) is integrated on the substrate 2 to monitor the temperature of the chip 5 and / or the circuits arranged on the substrate 2, simplifying the temperature measurement process and providing overheat protection. That is, see [reference needed]. Figure 3 A caching area can be reserved around each of the aforementioned chips. Figure 3The part indicated by the dashed line (this dashed line is only for marking purposes, indicating that the temperature sampling module 8 can be arranged at this location, and does not represent the perspective structure at this location), means that the temperature sampling module 8 can be optionally placed in this accommodating area.
[0047] By integrating the temperature sampling module 8 onto the substrate 2, the temperature of the chip 5 can be detected without the need for additional connecting components / devices, thus reducing the complexity of the semiconductor power module and simplifying assembly.
[0048] Specifically, in a preferred embodiment, any one of the chips 5 is connected to a temperature sampling module 8 through the connector 7. That is, based on the above, a temperature sampling module 8 can be optionally arranged in the accommodating area corresponding to each chip 5. For the chip 5 with the temperature sampling module 8 arranged, the junction temperature (NTC) of the chip 5 can be monitored in real time, thereby monitoring and optimizing the heat dissipation and operating status of the semiconductor power module in real time. Alternatively, multiple chips 5 can be arranged to share a temperature sampling module 8 to achieve synchronous monitoring of multiple chips.
[0049] Specifically, in another preferred embodiment, the temperature sampling module 8 is integrated into the chip 5. For example, the chip 5 with a built-in temperature sampling module 8 can also be configured with a fast recovery diode in conjunction with the IGBT chip 5 to monitor the junction temperature of the chip 5. It is understood that using a chip 5 with temperature sampling function further improves the integration and provides a semiconductor power module with advantages such as small size, high power density, high integration design, high junction temperature tolerance of the chip 5, low thermal resistance, low voltage drop, low commutation circuit parasitic inductance, and low cost.
[0050] Specifically, optionally, a temperature sampling module 8 can be independently set on the substrate 2 in addition to the temperature sampling modules 8 corresponding to each of the aforementioned chips 5, for bypassing NTC sampling. Since devices such as IGBT chips 5 and MOSFET chips 5 / modules generate a lot of heat during operation, placing the temperature sampling module 8 near these devices allows for real-time monitoring of the overall temperature of the semiconductor power module, enabling overheat protection, heat dissipation control, etc. It is understood that this independently set temperature sampling module 8 can be combined as an optional solution with the two implementation methods described above (connector 7 connects the temperature sampling module 8 and chip 5 / chip 5 with built-in temperature sampling function).
[0051] As an example, such as Figure 4 As shown, Figure 4 (a) shows the substrate 2 structure with an IGBT chip 5 / fast recovery diode (FRD) having built-in (or connected) temperature sampling and bypass NTC temperature sampling, wherein Figure 4(b) shows the corresponding topology, with U / L markings indicating upper / lower bridge respectively; DC+ / AC / DC- corresponding to three power terminals 62; C / E indicating collector / emitter signal terminals 61 respectively; and T+ / T- indicating temperature sampling signal terminals 61. Figure 5 As shown, Figure 5 (a) shows the substrate 2 structure with an IGBT chip 5 / fast recovery diode (FRD) with built-in temperature sampling, wherein Figure 5 (b) Shows the corresponding topology, identifying it as described above. Figure 4 Similar. For example... Figure 6 As shown, Figure 6 (a) shows the substrate 2 structure of an IGBT chip 5 with bypass NTC temperature sampling / fast recovery diode (FRD), wherein Figure 6 (b) Shows the corresponding topology, identifying it as described above. Figure 4 similar.
[0052] In this embodiment, in addition to the above, the power semiconductor module also integrates a current sensor (optionally a coreless current sensor (not shown in the figure)) and / or heat dissipation fins (not shown in the figure). Specifically, as an example, the signal terminal 61 is arranged on the substrate 2 and can be electrically connected to the driver board using wave selective soldering, press-fit, connectors, or other connection methods; the power terminal 62 extends out of the side frame 3 and can be electrically connected to the bus capacitor and AC copper bus using laser welding, bolt connection, or other methods; the power terminal 62 can be pre-drilled for integration with the coreless current sensor; the heat dissipation fins can be integrated on the back of the substrate 1 (the side facing away from the substrate 2) and integrated with the heat dissipation channel. Placing the heat dissipation fins in the heat dissipation channel allows the coolant to dissipate heat. Further, as an option, the side frame 3 and the substrate 1 can be connected to the heat dissipation channel by the aforementioned screws, reducing intermediate structures and improving heat dissipation effect.
[0053] Based on the above, the semiconductor power module of this embodiment offers a small-volume, integrated substrate 2 design, a highly integrated design, a low-cost design, and an integrated temperature sampling device that can monitor the junction temperature of chip 5 and the real-time temperature of the entire module in real time, thereby adjusting the heat dissipation strategy in real time. This allows it to be used by motor controllers with specific power levels and size requirements. Furthermore, its simple structure, low assembly difficulty, and ability to be mass-produced improve production efficiency.
[0054] It should be noted that the embodiments of this utility model have better implementability and are not intended to limit this utility model in any way. Any person skilled in the art may use the above-disclosed technical content to change or modify it into equivalent effective embodiments. However, any modifications or equivalent changes and modifications made to the above embodiments based on the technical essence of this utility model without departing from the content of the technical solution of this utility model shall still fall within the scope of the technical solution of this utility model.
Claims
1.A power semiconductor module, characterized in that: a substrate, a base plate, a side frame and a cover plate are included: the base plate is an integrated base plate, and a plurality of chips, electrical connection terminals and / or connecting elements are arranged on the base plate; the base plate is fixed to the substrate by metal solder; the side frame surrounds the base plate and is connected to the substrate; the cover plate is connected to the side frame and is located above the base plate. 2.The power semiconductor module according to claim 1, characterized in that: at least one temperature sampling module is integrated on the base plate to monitor the temperature of the chips. 3.The power semiconductor module according to claim 2, characterized in that: any of the chips is connected to a temperature sampling module through the connecting element. 4.The power semiconductor module according to claim 2, characterized in that: the temperature sampling module is integrated on the chip. 5.The power semiconductor module according to claim 2, characterized in that: a temperature sampling module is independently arranged on the base plate to bypass NTC sampling. 6.The power semiconductor module according to claim 1, characterized in that: the connecting element includes a metal bonding wire and a connecting lead wire. 7.The power semiconductor module according to claim 1, characterized in that: the side frame is provided with connecting holes at four corners in the circumferential direction; screws are extended out of the connecting holes to connect to the substrate. 8.The power semiconductor module according to claim 1, characterized in that: the side frame is provided with a sealing element on the side connected to the substrate; and / or, the side frame is filled with a material that achieves electrical insulation. 9.The power semiconductor module according to claim 1, characterized in that: the base plate includes a ceramic layer and upper and lower copper layers on both sides of the ceramic layer; a plurality of grooves are arranged on the base plate to separate the chips. 10.The power semiconductor module according to claim 1, characterized in that: the power semiconductor module further integrates a current sensor and / or a heat dissipation fin.