Crimping type IGBT subunit and crimping type IGBT module

Abstract

The utility model belongs to the technical field of IGBTs, and particularly relates to a crimping type IGBT subunit and a crimping type IGBT module, a plurality of flow channels are arranged in a collector current-conducting plate, the plurality of flow channels are arranged in the collector current-conducting plate in a manner of extending along the length and / or width direction of the collector current-conducting plate, and every two adjacent flow channels are communicated with each other. Phase change working media are arranged in the multiple flow channels, the multiple chips and the multiple emitter conducting strips are arranged, the multiple chips are arranged on the collector conducting plate, the multiple emitter conducting strips are arranged on the faces, away from the collector conducting plate, of the multiple chips in a one-to-one mode, and the conducting pressure-bearing assembly is used for making contact with the multiple emitter conducting strips. According to the invention, the local height at the position of a short-circuit failure chip can be rapidly and transversely transmitted, the temperature uniformity is improved, the situation of overhigh local temperature is avoided, the risk of fusing of structures such as a busbar and the risk of triggering open fire are reduced, and the reliability and safety of long-term operation of a power system are improved.

Description

Technical Field

[0001] This utility model belongs to the field of IGBT technology, specifically relating to a press-fit IGBT subunit and a press-fit IGBT module. Background Technology

[0002] With the trend of large-scale grid connection of new energy, press-fit IGBT modules, as core components of large-capacity flexible DC transmission and transformation converter valve devices, face many performance challenges. Among them, high output current, high junction temperature, and large capacity are the development directions of press-fit IGBT modules.

[0003] Due to limitations in the current-carrying capacity of a single chip, most press-fit IGBT modules typically contain at least one press-fit IGBT sub-unit, and a single press-fit IGBT sub-unit generally contains multiple chips, as illustrated in Chinese invention application CN116053233A. Based on the structural characteristics of such press-fit IGBT modules, dozens of chips are generally connected in parallel. This multi-chip parallel connection not only presents challenges in current and voltage sharing but also significantly increases the probability of short-circuit failures among the chips within the module. For example, although each IGBT sub-unit receives continuous cooling through the heat dissipation unit of the press-fit IGBT module during operation, when a chip short-circuits, a large current flows through both the collector and emitter terminals, generating localized high temperatures within a short time. This can easily lead to the melting of busbars and other structures, causing an open circuit and posing risks such as open flames, thus affecting the long-term reliability and safety of the power system. Utility Model Content

[0004] The technical problem to be solved by this utility model is to provide a press-fit IGBT subunit and a press-fit IGBT module, which aims to more quickly transfer the local height at the location of the short-circuit failure chip, improve the temperature uniformity of the press-fit IGBT subunit when the chip short-circuit failure occurs, avoid the situation of excessive local temperature, reduce the risk of busbar and other structures melting and open flame, and improve the long-term reliability and safety of the power system.

[0005] This utility model provides a press-fit IGBT sub-unit, including a collector conductive plate, a chip, an emitter conductive sheet, and a conductive pressure bearing assembly. The collector conductive plate has several flow channels inside, which extend along the length and / or width of the collector conductive plate and are connected to each other. A phase change working fluid is disposed in the flow channels. There are multiple chips and emitter conductive sheets. The chips are disposed on the collector conductive plate, and the emitter conductive sheets are disposed one-to-one on the side of the chips facing away from the collector conductive plate. The conductive pressure bearing assembly is used to contact the emitter conductive sheets.

[0006] Furthermore, the collector conductive plate is provided with several flow channels inside, and two adjacent flow channels are connected by a flow channel. The flow channels are straight or bent.

[0007] Furthermore, the flow channel is straight and there are two of them. Several flow channels are arranged inside the collector conductive plate in the same direction. One flow channel is located at one end of several flow channels and is connected to that end of several flow channels at the same time. The other flow channel is located at the other end of several flow channels and is connected to that end of several flow channels at the same time.

[0008] Furthermore, the side of the current collector conductive plate is provided with an opening for injecting phase change working fluid, and the opening is connected to one of the flow channels.

[0009] Furthermore, a blocking block is provided on the opening.

[0010] Furthermore, the collector conductive plate has a gate conductive plate on one side where several chips are disposed, and the chips are connected to the gate conductive plate through gate leads, the gate leads being made of lead-tin alloy.

[0011] Furthermore, it also includes a gate connector, one end of which is connected to the gate conductive plate.

[0012] Furthermore, it also includes a side frame, which is disposed on the collector conductive plate, and the conductive pressure bearing component, several chips and several emitter conductive sheets are all located in the side frame.

[0013] Furthermore, the conductive pressure-bearing assembly includes an emitter conductive plate, several bypass busbars, several disc spring assemblies, and several conductive posts. Several disc spring assemblies are connected to the emitter conductive plate, several conductive posts are connected one-to-one to several disc spring assemblies, several bypass busbars are located one-to-one on the sides of several disc spring assemblies, and one end of each bypass busbar is fixed between its respective disc spring assembly and the emitter conductive plate, and the other end is fixed between its respective disc spring assembly and the conductive post. The conductive pressure-bearing assembly is in one-to-one contact with several emitter conductive plates through several conductive posts.

[0014] This utility model also provides a press-fit IGBT module, which is provided with the press-fit IGBT sub-unit as described above.

[0015] The beneficial effects of this invention are that when a single chip on a sub-unit experiences a short-circuit failure, the phase change working fluid in the corresponding flow channel of the collector conductive plate can absorb the heat generated by the chip and rapidly diffuse the heat along several flow channels. Compared with ordinary collector conductive plates, this invention can more quickly transfer the local height at the location of the short-circuit failure chip laterally, increasing the lateral heat transfer speed on the collector conductive plate. This improves the temperature uniformity of the press-fit IGBT sub-unit when a chip short-circuit failure occurs, avoids local overheating, reduces the risk of busbar and other structural meltdowns and the risk of open flames, and improves the long-term reliability and safety of the power system. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of the press-fit IGBT subunit of this utility model.

[0017] Figure 2 This is a schematic diagram of the structure of the conductive pressure-bearing component of this utility model.

[0018] Figure 3 This is a schematic diagram of the chip arrangement in the press-fit IGBT subunit of this utility model.

[0019] Figure 4 This is a side view of the press-fit IGBT subunit of this utility model.

[0020] Figure 5 This utility model Figure 4 AA section view in the image.

[0021] In the diagram: 1. Collector conductive plate; 11. Flow channel; 12. Current guiding channel; 13. Opening; 2. Chip; 3. Emitter conductive sheet; 4. Conductive pressure bearing assembly; 41. Emitter conductive plate; 42. Bypass busbar; 43. Disc spring assembly; 44. Conductive pillar; 5. Side frame; 6. Gate conductive plate; 7. Gate lead; 8. Gate connector. Detailed Implementation

[0022] like Figures 1-5As shown, this utility model provides a press-fit IGBT sub-unit, including a collector conductive plate 1, a chip 2, an emitter conductive sheet 3, and a conductive pressure-bearing assembly 4. The collector conductive plate 1 has several flow channels 11 inside, extending along the length and / or width of the collector conductive plate 1, and adjacent flow channels 11 are connected, thus ensuring corresponding connectivity between the flow channels 11. A phase change working fluid is disposed within each flow channel 11. Specifically, this phase change working fluid is a working fluid that can change from a liquid to a gaseous state after absorbing heat and condense back into a liquid state after dissipating heat, such as a refrigerant. Several chips 2 and emitter conductive sheets 3 are present. Several chips 2 are disposed on the collector conductive plate 1, and several emitter conductive sheets 3 are disposed one-to-one on the side of several chips 2 facing away from the collector conductive plate 1. Each chip 2 has one emitter conductive sheet 3 on the side facing away from the collector conductive plate 1. The conductive pressure-bearing assembly 4 is used to contact the several emitter conductive sheets 3.

[0023] The press-fit IGBT subunit provided by this invention continuously dissipates heat through the heat dissipation unit of the press-fit IGBT module during operation. Based on the internal flow channels 11 of the aforementioned collector conductive plate 1, when a single chip 2 on the subunit experiences a short-circuit failure, the phase change working fluid in the corresponding flow channel 11 of the collector conductive plate 1 absorbs the heat generated by the chip 2 and rapidly diffuses it along several flow channels 11. Compared to a conventional collector conductive plate 1, this invention can more quickly transfer the localized high temperature at the location of the short-circuited chip 2 laterally, increasing the lateral heat transfer speed on the collector conductive plate 1. This improves the temperature uniformity of the press-fit IGBT subunit when a chip 2 experiences a short-circuit failure, preventing localized overheating, reducing the risk of busbar and other structural meltdowns and the risk of open flames, and improving the long-term reliability and safety of the power system. The heat absorbed by the phase change working fluid is then dissipated through the heat dissipation unit of the press-fit IGBT module.

[0024] The collector conductive plate 1 has several flow channels 12 inside, and two adjacent flow channels 11 are connected by a flow channel 12. The flow channels 12 are straight or bent.

[0025] In one embodiment of this utility model, the flow channel 12 is bent, and after the flow channels 11 are connected in a corresponding manner, they together with the flow channel 12 form a serpentine flow loop.

[0026] In another embodiment of this utility model, such as Figure 5As shown, the flow guiding channels 12 are straight and there are two of them. Several flow channels 11 extend in the same direction inside the collector conductive plate 1, for example, along the length direction of the collector conductive plate 1. One flow guiding channel 12 is located at one end of several flow channels 11 and is connected to that end of several flow channels 11. The other flow guiding channel 12 is located at the other end of several flow channels 11 and is connected to that end of several flow channels 11. Several flow channels 11 and two flow guiding channels 12 together form a flow loop with multiple flow channels 11 connected in parallel, which has less flow resistance than a serpentine bend-shaped loop.

[0027] The current collector conductive plate 1 has an opening 13 on its side for injecting a phase change working fluid, and the opening 13 is connected to one of the flow channels 12. This opening 13 facilitates the injection of the phase change working fluid into the current collector conductive plate 1. The amount of phase change working fluid injected depends on actual needs. A plug can be installed on the opening 13 to seal it after the phase change working fluid is injected.

[0028] A metal connection layer is provided between chip 2, collector conductive plate 1, and emitter conductive sheet 3. This metal connection layer can be either welded or sintered. A gate conductive plate 6 is provided on one side of the collector conductive plate 1 where several chips 2 are located. The chips 2 are connected to the gate conductive plate 6 via gate leads 7. In a preferred embodiment of this invention, the gate lead 7 is made of lead-tin alloy, meaning that the gate lead 7 uses lead-tin alloy wire. Compared to conventional copper or aluminum gate leads 7, lead-tin alloy wire has a lower melting point. When chip 2 experiences a short-circuit failure, the gate lead 7 can melt more quickly, thereby isolating chip 2 from the conductive path. The remaining chips 2 remain on, sharing the current. This improves the controllability of the failure current conduction process and enhances the long-term short-circuit failure current conduction capability of the device.

[0029] The present invention also includes a gate connector 8, one end of which is connected to the gate conductive plate 6. The gate connector 8 is used to lead out the gate in the press-fit IGBT sub-unit during the assembly of the press-fit IGBT module.

[0030] This utility model also includes a side frame 5, which is disposed on the collector conductive plate 1. The conductive pressure bearing component 4, several chips 2 and several emitter conductive sheets 3 are all located in the side frame 5. The side frame 5 is the outer shell of the press-fit IGBT sub-unit.

[0031] like Figure 2As shown, the conductive pressure-bearing assembly 4 includes an emitter conductive plate 41, several bypass busbars 42, several disc spring assemblies 43, and several conductive posts 44. Several disc spring assemblies 43 are connected to the emitter conductive plate 41, and are spaced apart. Several conductive posts 44 are connected one-to-one to several disc spring assemblies 43. Several bypass busbars 42 are located one-to-one on the sides of several disc spring assemblies 43, with one end of each bypass busbar 42 fixed between its respective disc spring assembly 43 and the emitter conductive plate 41, and the other end fixed between its respective disc spring assembly 43 and the conductive post 44. The conductive pressure-bearing assembly 4 makes one-to-one contact with several emitter conductive sheets 3 through several conductive posts 44. Specifically, during the assembly of the press-fit IGBT module, the conductive pressure-bearing assembly 4 is pressurized, causing several conductive posts 44 to make one-to-one contact with several emitter conductive sheets 3. The emitter conductive sheets 3 are made of copper-diamond composite material or molybdenum metal material to ensure good strength.

[0032] This utility model also provides a press-fit IGBT module, which is provided with the aforementioned press-fit IGBT sub-units. Specifically, the press-fit IGBT module further includes a socket, a housing, a cover, and a PCB board. The number of press-fit IGBT sub-units can be one or more. The housing is disposed on the socket, that is, the lower end of the housing is connected to the socket. The bottom of the socket is hollowed out. All press-fit IGBT sub-units are disposed on the socket and located inside the housing. The collector conductive plate 1 directly faces outward as the collector of the press-fit IGBT module. The cover is disposed on the upper end of the housing. The cover and the housing are bonded together with structural adhesive after assembly, and the cover faces the emitter conductive plate 41 of the press-fit IGBT sub-unit. The emitter is led out along the cover. The PCB is connected to the cover, and the gate connector 8 is connected to the PCB. The gate is led out through the copper-clad circuit inside the PCB.

[0033] Because of the aforementioned press-fit IGBT sub-units, this press-fit IGBT module continuously dissipates heat through its heat dissipation unit during operation. When a single chip 2 on the sub-unit experiences a short-circuit failure, the phase change working fluid inside the collector conductive plate 1 absorbs the heat and rapidly diffuses the heat generated by the chip 2 along several flow channels 11. This more quickly and laterally transfers the localized high temperature at the location of the short-circuited chip 2, increasing the lateral heat transfer speed on the collector conductive plate 1. Consequently, this improves the temperature uniformity of the press-fit IGBT sub-unit when a chip 2 experiences a short-circuit failure, preventing localized overheating, reducing the risk of busbar and other structural meltdowns and the risk of open flames, and enhancing the long-term reliability and safety of the power system.

[0034] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of protection of this application is limited to these examples; within the framework of this application, the technical features of the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations of different aspects of one or more embodiments of this application as described above, which are not provided in detail for the sake of brevity.

[0035] One or more embodiments in this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of this application. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of one or more embodiments in this application should be included within the protection scope of this application.

Claims

1. A press-pack IGBT subunit, characterized by, The application relates to a power collector conductive plate (1), a chip (2), an emitter conductive sheet (3) and a conductive pressure-bearing assembly (4), wherein a plurality of flow channels (11) are arranged in the power collector conductive plate (1) and extend along the length and / or width direction of the power collector conductive plate (1) in the power collector conductive plate (1), and two adjacent flow channels (11) are communicated with each other; phase-change working medium is arranged in the flow channels (11); the chip (2) and the emitter conductive sheet (3) are provided with a plurality of chips (2) and a plurality of emitter conductive sheets (3) respectively; the chips (2) are arranged on the power collector conductive plate (1); the emitter conductive sheets (3) are arranged on the back of the chips (2) away from the power collector conductive plate (1) in one-to-one mode; and the conductive pressure-bearing assembly (4) is used for contacting the emitter conductive sheets (3).

2. The crimped IGBT subunit of claim 1, wherein, The power collector conductive plate (1) is internally provided with a plurality of flow guide channels (12), and two adjacent flow channels (11) are communicated with each other through a flow guide channel (12).

3. The crimped IGBT subunit of claim 2, wherein, The flow guide channels (12) are linear and two in number; the flow channels (11) extend in the same direction in the power collector conductive plate (1); one flow guide channel (12) is located at one end of the flow channels (11) and is communicated with the end of the flow channels (11); and the other flow guide channel (12) is located at the other end of the flow channels (11) and is communicated with the end of the flow channels (11).

4. The crimped IGBT subunit according to claim 2 or 3, characterized in that The power collector conductive plate (1) is provided with an opening (13) on the side surface for injecting phase-change working medium, and the opening (13) is communicated with one flow guide channel (12).

5. The crimped IGBT subunit of claim 4, wherein, A plug is arranged on the opening (13).

6. The crimped IGBT subunit according to any one of claims 1 to 3, 5, characterized in that, The power collector conductive plate (1) is provided with a gate conductive plate (6) on one surface of the power collector conductive plate (1) provided with the chips (2); the chips (2) are connected with the gate conductive plate (6) through gate lead wires (7); and the material of the gate lead wires (7) is lead-tin alloy.

7. The crimped IGBT subunit of claim 6, wherein, The gate conductive plate (6) is connected with a gate connecting piece (8).

8. The crimped IGBT subunit of any of claims 1-3, 5, wherein, A side frame (5) is arranged on the power collector conductive plate (1); the conductive pressure-bearing assembly (4), the chips (2) and the emitter conductive sheets (3) are located in the side frame (5).

9. The crimped IGBT subunit of any one of claims 1-3, 5, wherein, The conductive pressure-bearing assembly (4) comprises an emitter conductive plate (41), a plurality of bypass busbars (42), a plurality of disc spring assemblies (43) and a plurality of conductive columns (44); the disc spring assemblies (43) are connected with the emitter conductive plate (41); the conductive columns (44) are connected with the disc spring assemblies (43) in one-to-one mode; the bypass busbars (42) are located on the side surface of the disc spring assemblies (43) in one-to-one mode; one end of each bypass busbar (42) is fixed between the disc spring assembly (43) and the emitter conductive plate (41); and the other end of each bypass busbar (42) is fixed between the disc spring assembly (43) and the conductive column (44); and the conductive pressure-bearing assembly (4) is in one-to-one contact with the emitter conductive sheets (3) through the conductive columns (44).

10. A press-pack IGBT module, characterized by A press-pack IGBT subunit as claimed in any of claims 1 to 9 is provided.

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