Swing valve and semiconductor processing equipment

Abstract

The utility model provides a swing valve and semiconductor processing equipment, the swing valve comprises a valve plate, rotating blades and driving motors, the valve plate is arranged at an opening of a target reaction cavity, the valve plate is provided with a plurality of gas flow channels, each gas flow channel is internally and rotatably connected with the rotating blade, each rotating blade is driven by one driving motor, and the driving motors drive the rotating blades to rotate. When the driving motor rotates, the rotating blades are driven to rotate so as to adjust the opening degree of the gas flow channel, and compared with the technical scheme that the target reaction cavity is opened through swinging of a swing valve in the prior art, the influence on the environment in the target reaction cavity when the swing valve is opened is reduced, and the stability of the environment in the target reaction cavity is improved; therefore, particulate matter falling caused by rapid change of the air pressure in the target reaction cavity is prevented, and the quality of the wafer is ensured.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor processing equipment, and more particularly to a swing valve and a semiconductor processing equipment. BACKGROUND

[0002] In many semiconductor processing equipment, the reaction chamber is one of the core components of the semiconductor processing equipment, which provides a controlled physical or chemical environment for the wafer to complete a specific process step. It mainly provides a sealed process environment for the wafer, and the vacuum degree of the reaction chamber is a key parameter affecting the process quality, uniformity and repeatability. The requirements for vacuum degree are significantly different for different processes, and need to be accurately controlled according to specific applications (such as deposition, etching, ion implantation, etc.).

[0003] At present, the swing valve is arranged between the channel connected with the vacuum pump of the reaction chamber. When the reaction chamber is pumped, the swing valve swings to open the channel connected with the vacuum pump of the reaction chamber, so that the vacuum pump pumps the reaction chamber. The problem generated by the above technical scheme is that when the swing valve swings quickly, the pressure difference between the two sides of the swing valve is large, which causes the pressure in the reaction chamber to be unstable and the gas distribution to be uneven, which easily causes the particles in the reaction chamber to fall and affect the quality of the wafer. CONTENT OF THE INVENTION

[0004] The purpose of the embodiment of the present application is to provide a swing valve and a semiconductor processing equipment to solve the technical problem of the influence of the swing of the swing valve on the pressure of the reaction chamber in the semiconductor processing equipment in the prior art.

[0005] To achieve the above-mentioned purpose, the first aspect of the present application provides a swing valve arranged at the communication position of the target reaction chamber and the vacuum pump in the semiconductor processing equipment, comprising:

[0006] A valve plate is arranged at the opening of the target reaction chamber, and a plurality of gas flow channels are arranged on the valve plate, and the plurality of gas flow channels are spaced along the radial direction of the valve plate;

[0007] A plurality of rotating vanes correspond to the plurality of gas flow channels one by one, and each rotating vane is rotationally connected in the corresponding gas flow channel;

[0008] A plurality of driving motors correspond to the plurality of rotating vanes one by one, and each driving motor is connected to the corresponding rotating vane;

[0009] The driving motor is used to drive the rotating vane to rotate in the corresponding gas flow channel to adjust the opening degree of the gas flow channel.

[0010] Optionally, the plurality of driving motors simultaneously or respectively drive the rotating blades to rotate in the corresponding gas flow channels.

[0011] Optionally, the rotating blades have a first position and a second position relative to the gas flow channels, when the rotating blades are in the first position, the rotating blades close the gas flow channels;

[0012] when the rotating blades are in the second position, the opening degree of the gas flow channels is at a maximum value;

[0013] the driving motor drives the rotating blades to rotate from the first position to the second position in a clockwise direction or a counterclockwise direction.

[0014] Optionally, the rotating blades comprise:

[0015] a rotating shaft rotatably connected in the gas flow channel and connected with the driving motor;

[0016] a blade connected to the rotating shaft for adjusting the opening degree of the gas flow channel under the driving of the rotating shaft.

[0017] Optionally, a plurality of sub-gas flow channels are arranged in the gas flow channel, and the plurality of sub-gas flow channels are spaced along the length direction of the gas flow channel.

[0018] The blade comprises a plurality of sub-blades, the plurality of sub-blades are spaced along the axial direction of the rotating shaft, and the plurality of sub-blades correspond to the plurality of sub-gas flow channels one by one, and each sub-blade is rotatably connected in the corresponding sub-gas flow channel.

[0019] Optionally, along the radial direction of the rotating shaft, the sub-blade has opposite first and second ends;

[0020] the first end is provided with an arc-shaped first curved surface structure, and the second end is provided with an arc-shaped second curved surface structure;

[0021] the sub-gas flow channel is respectively provided with a third curved surface structure and a fourth curved surface structure on the two opposite side walls along the radial direction of the rotating shaft;

[0022] when the sub-blade closes the sub-gas flow channel, the first curved surface structure is adapted in the third curved surface structure, and the second curved surface structure is adapted in the fourth curved surface structure.

[0023] Optionally, the blade comprises a first sub-blade body and a second sub-blade body, and the first sub-blade body and the second sub-blade body are arranged at an angle.

[0024] Optionally, further comprising:

[0025] a controller, electrically connected with the driving motor;

[0026] a sensor, mounted on a side of the rotating blade away from the target reaction cavity and electrically connected with the controller, the sensor being configured to generate a detection electrical signal when detecting gas flowing into the target reaction cavity and transmit the detection electrical signal to the controller, the controller being configured to generate a closing control electrical signal according to the detection electrical signal and transmit the closing control electrical signal to the driving motor, and the driving motor being configured to close the gas flow channel according to the closing control electrical signal.

[0027] Optionally, each of the rotating blades comprises at least one sensor.

[0028] The swing valve provided by the present application has the following advantages: compared with the prior art, the swing valve provided by the present application comprises a valve plate, rotating blades and driving motors, the valve plate is arranged at an opening of a target reaction cavity, the valve plate is provided with a plurality of gas flow channels, each of the gas flow channels is rotationally connected with a rotating blade, and each of the rotating blades is driven by a driving motor. When the driving motor rotates, the rotating blade is driven to rotate to adjust the opening degree of the gas flow channel. Compared with the prior art, the swing valve provided by the present application reduces the influence of the swing valve on the environment in the target reaction cavity when the swing valve is opened, improves the stability of the environment in the target reaction cavity, prevents the particles from falling off due to the rapid change of the gas pressure in the target reaction cavity, and thus ensures the quality of the wafer.

[0029] Meanwhile, compared with the prior art, since the rotating blades are rotationally connected with the valve plate and are driven by the driving motors, when the driving motors drive the rotating blades to open the gas flow channels on the valve plate, the valve plate does not need to swing to communicate the target reaction cavity with other devices, such as a vacuum pump. Therefore, the swing position of the valve plate does not need to be reserved on the machine, thereby reducing the size of the machine.

[0030] In a second aspect, the present application provides a semiconductor processing device, characterized in that the semiconductor processing device comprises:

[0031] a reaction cavity;

[0032] a vacuum pump, in communication with the reaction cavity, configured to vacuumize the reaction cavity;

[0033] a swing valve, arranged at a communication position between the reaction cavity and the vacuum pump, configured to adjust the flow rate of gas flowing into the reaction cavity, and the swing valve is the swing valve provided in any one of the above aspects.

[0034] The beneficial effects of the semiconductor processing equipment provided in this application are as follows: Compared with the prior art, the semiconductor processing equipment provided in this application includes a reaction chamber, a vacuum pump, and a swing valve. The vacuum pump is connected to the reaction chamber, and the swing valve is located at the connection between the reaction chamber and the vacuum pump. The swing valve includes a valve plate, rotating blades, and a drive motor. The valve plate is located at the opening of the target reaction chamber, and the valve plate is provided with multiple gas channels. Each gas channel is rotatably connected to a rotating blade, and each rotating blade is driven by a drive motor. When the drive motor rotates, it drives the rotating blade to rotate, thereby adjusting the opening degree of the gas channel. Compared with the prior art, which uses a swing valve to open the target reaction chamber, this reduces the impact of the swing valve on the environment inside the target reaction chamber when it is opened, improves the stability of the environment inside the target reaction chamber, and prevents particulate matter from falling off due to rapid changes in gas pressure inside the target reaction chamber, thereby ensuring the quality of the wafer.

[0035] Meanwhile, compared with the existing technology of opening the reaction chamber by swinging the valve, since the rotating blade is rotatably connected to the valve plate and driven by the drive motor, when the drive motor drives the rotating blade to open the gas flow channel on the valve plate, the valve plate does not need to swing to connect the vacuum pump of the reaction chamber. Therefore, there is no need to reserve a swing position for the valve plate on the machine of the semiconductor processing equipment, thereby reducing the size of the machine of the semiconductor processing equipment. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a partial structural diagram of the reaction chamber provided in an embodiment of this application;

[0038] Figure 2 This is a schematic diagram of the structure when the blade is in the first position, as provided in an embodiment of this application.

[0039] Figure 3 This is a schematic diagram of the structure when the blade is in the second position, as provided in an embodiment of this application.

[0040] Figure 4 This is a schematic diagram of the structure when the sub-blade is in the first position, as provided in an embodiment of this application.

[0041] Figure 5 This is a schematic diagram of the structure when the sub-blade is in the second position, as provided in an embodiment of this application.

[0042] Figure 6 Fig. 3 is a structural schematic diagram of a sub-blade in a first position according to another embodiment of the present application;

[0043] Figure 7 Fig. 4 is a structural schematic diagram of a sub-blade in a second position according to another embodiment of the present application;

[0044] Figure 8 Fig. 5 is a structural schematic diagram of a first sub-blade body and a second sub-blade body in a first position according to another embodiment of the present application;

[0045] Figure 9 Fig. 6 is a structural schematic diagram of a first sub-blade body and a second sub-blade body in a second position according to another embodiment of the present application.

[0046] In the drawings, reference numerals:

[0047] 10, valve plate; 11, gas flow channel; 111, sub-gas flow channel; 1111, third curved surface structure; 1112, fourth curved surface structure; 20, rotating blade; 21, rotating shaft; 22, blade; 221, sub-blade; 2211, first curved surface structure; 2212, second curved surface structure; 222, first sub-blade body; 223, second sub-blade body; 30, driving motor; 40, reaction cavity; 50, vacuum pump; 60, sensor;

[0048] S1, first end; S2, second end. DETAILED DESCRIPTION

[0049] In order to make the technical problems to be solved by the present application, technical solutions and beneficial effects clearer, the present application will be further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not used to limit the present application.

[0050] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0051] It should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0052] In addition, the terms "first", "second", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or an ordered ranking of the indicated technical features. Thus, features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited.

[0053] Please refer to Figures 1 to 9 , now the swing valve and semiconductor processing equipment provided by the embodiments of the present application will be described.

[0054] The first aspect of the present application provides a swing valve, comprising a valve plate 10, a rotating blade 20 and a drive motor 30.

[0055] Please refer to Figures 1 to 3 , the valve plate 10 is arranged at the opening of the target reaction cavity 40, that is, the valve plate 10 is arranged at the passage where the target reaction cavity 40 communicates with other components in the semiconductor processing equipment, such as the valve plate 10 is arranged in the passage where the target reaction cavity 40 communicates with the vacuum pump 50, and the valve plate 10 is provided with a gas flow channel 11, the number of the gas flow channel 11 is multiple, the multiple gas flow channels 11 are uniformly spaced along the radial direction of the valve plate 10, and the gas flow channel 11 is used for gas flowing out of the target reaction cavity 40.

[0056] The number of the rotating blades 20 is multiple, and the multiple rotating blades 20 correspond one-to-one to the multiple gas flow channels 11. Each rotating blade 20 is rotationally connected in the gas flow channel 11 corresponding thereto.

[0057] Among the multiple rotating blades 20, each rotating blade 20 has a first position and a second position in the gas flow channel 11 corresponding thereto. When the rotating blade 20 is in the first position, the rotating blade 20 closes the gas flow channel 11. When the rotating blade 20 is in the second position, the rotating blade 20 opens the gas flow channel 11, and at this time, the opening degree of the gas flow channel 11 reaches the maximum state.

[0058] The number of the drive motors 30 is also multiple, and the multiple drive motors 30 correspond one-to-one to the multiple rotating blades 20. Each drive motor 30 is connected to the rotating blade 20 corresponding thereto.

[0059] Each drive motor 30 comprises a fixed part and a rotating part rotationally connected to the fixed part and relative to the fixed part. The fixed part is the stator part of the drive motor 30, and the rotating part is the rotor part of the drive motor 30. Among the multiple drive motors 30, the fixed part of each drive motor 30 is connected to the valve plate 10, and the rotating blade 20 is connected to the rotating part of the drive motor 30 corresponding thereto.

[0060] The driving motor 30 is used to drive the rotating vane 20 to rotate between the first position and the second position in the gas flow channel 11 at the start, or the rotating angle of the rotating vane 20 in the gas flow channel 11 is adjusted by adjusting the rotating angle of the driving motor 30, so as to adjust the opening degree of the gas flow channel 11.

[0061] The driving motor 30 can drive the rotating vane 20 to rotate from the first position to the second position in the clockwise direction or the counterclockwise direction.

[0062] Compared with the prior art, the swing valve provided by the application comprises a valve plate 10, a rotating vane 20 and a driving motor 30. The valve plate 10 is arranged at the opening of the target reaction cavity 40, and a plurality of gas flow channels 11 are arranged on the valve plate 10. The rotating vane 20 is rotatably connected in each gas flow channel 11, and each rotating vane 20 is driven by a driving motor 30. When the driving motor 30 rotates, the rotating vane 20 is driven to rotate, so as to adjust the opening degree of the gas flow channel 11. Compared with the technical solution of opening the target reaction cavity 40 by swinging the swing valve in the prior art, the influence of the swing valve on the environment in the target reaction cavity 40 when the swing valve is opened is reduced, the stability of the environment in the target reaction cavity 40 is improved, the particle shedding caused by the rapid change of the gas pressure in the target reaction cavity 40 is prevented, and the quality of the wafer is ensured.

[0063] Meanwhile, compared with the technical solution of opening the target reaction cavity 40 by swinging the swing valve in the prior art, since the rotating vane 20 is rotatably connected to the valve plate 10 and is driven by the driving motor 30, when the driving motor 30 drives the rotating vane 20 to open the gas flow channel 11 on the valve plate 10, the valve plate 10 does not need to swing to make the target reaction cavity 40 communicate with other devices, such as a vacuum pump 50, and the swing position of the valve plate 10 does not need to be reserved on the machine, so the size of the machine is reduced.

[0064] In the application, the driving motor 30 is a servo motor. The rotating angle of the driving motor 30 can be set according to the requirement, so that the rotating vane 20 is rotated to the first position, the second position and any position between the first position and the second position in the gas flow channel 11.

[0065] Meanwhile, the turning direction of the driving motor 30 after a preset time interval can also be set according to the requirement, so that the rotating vane 20 is rotated from the first position to the second position in the clockwise direction, and when it is needed to close the gas flow channel 11, the driving motor 30 drives the rotating vane 20 to rotate from the second position to the first position in the counterclockwise direction.

[0066] In another embodiment of the application, the rotating vane 20 is rotated from the first position to the second position in the counterclockwise direction, and then is rotated from the second position to the first position in the clockwise direction.

[0067] In the present application, please refer to Figure 2 and Figure 3 The rotating vane 20 comprises a rotating shaft 21 and a vane 22.

[0068] Specifically, the two axial ends of the rotating shaft 21 are rotatably connected to the side walls of the gas flow channel 11 at the two ends along the length direction of the gas flow channel 11, and one axial end of the rotating shaft 21 penetrates the side wall of the gas flow channel 11 and is connected to the driving motor 30.

[0069] The vane 22 is connected to the rotating shaft 21 and has a first position and a second position. When the driving motor 30 rotates, the vane 22 rotates between the first position and the second position under the driving of the rotating shaft 21, so as to adjust the opening degree of the gas flow channel 11.

[0070] In an embodiment of the present application, please refer to Figure 4 and Figure 5 The gas flow channel 11 is provided with a plurality of sub-gas flow channels 111, the plurality of sub-gas flow channels 111 are spaced along the length direction of the gas flow channel 11, and the plurality of sub-gas flow channels 111 are independently arranged.

[0071] The vane 22 comprises a plurality of sub-vanes 221, the plurality of sub-vanes 221 are arranged on the same rotating shaft 21 and are driven to rotate by the same rotating shaft 21, and the plurality of sub-vanes 221 are spaced along the axial direction of the rotating shaft 21. The plurality of sub-vanes 221 correspond to the plurality of sub-gas flow channels 111 one by one, and each sub-vane 221 is rotatably connected to the corresponding sub-gas flow channel 111. Under the driving of the rotating shaft 21, each sub-vane 221 is used to adjust the opening degree of the corresponding sub-gas flow channel 111.

[0072] In an embodiment of the present application, when the sub-vane 221 rotates from the first position to the second position in the clockwise direction, the driving motor 30 drives the rotating vane 20 to rotate from the second position to the first position in the counterclockwise direction when it is needed to close the gas flow channel 11, or when the vane 22 rotates from the first position to the second position in the counterclockwise direction, the driving motor 30 drives the rotating vane 20 to rotate from the second position to the first position in the clockwise direction when it is needed to close the gas flow channel 11.

[0073] In the present application, the sub-vane 221 has opposite first end S1 and second end S2 along the radial direction of the rotation shaft 21. The first end S1 is provided with an arc-shaped first curved structure 2211, and the second end S2 is provided with an arc-shaped second curved structure 2212. The sub-gas flow channel 111 is provided with a third curved structure 1111 and a fourth curved structure 1112 on the opposite two side walls along the radial direction of the rotation shaft 21. When the sub-vane 221 closes the sub-gas flow channel 111, i.e. when the sub-vane 221 is in the first position, the first curved structure 2211 is adapted in the third curved structure 1111, and the second curved structure 2212 is adapted in the fourth curved structure 1112.

[0074] Specifically, please refer to Figure 6 and Figure 7 , the following is an example of driving the motor 30 to drive the rotating vane 20 to rotate from the second position to the first position along the clockwise direction when it is needed to close the gas flow channel 11 after the sub-vane 221 is rotated from the first position to the second position along the counterclockwise direction.

[0075] As shown in Figure 6 , the first end S1 is located on the left side of the sub-vane 221, the second end S2 is located on the right side of the sub-vane 221, the first curved structure 2211 is located between the left side wall of the sub-vane 221 and the upper side wall of the sub-vane 221, and the second curved structure 2212 is located between the right side wall of the sub-vane 221 and the lower side wall of the sub-vane 221.

[0076] By providing the first curved structure 2211 at the first end S1 of the sub-vane 221, the second curved structure 2212 at the second end S2 of the sub-vane 221, and the third curved structure 1111 adapted to the first curved structure 2211 and the fourth curved structure 1112 adapted to the second curved structure 2212 on the inner side wall of the sub-gas flow channel 111, when the sub-vane 221 is in the first position, the air tightness of the cooperation between the sub-vane 221 and the sub-gas flow channel 111 is improved.

[0077] In another embodiment of the present application, please refer to Figure 8 and Figure 9 , the vane 22 includes a first sub-vane 221 body and a second sub-vane 221 body, the first sub-vane 221 body and the second sub-vane 221 body are arranged at an angle, such as perpendicular to each other, or the angle between the first sub-vane 221 body and the second sub-vane 221 body is 45 degrees, and the first sub-vane 221 body and the second sub-vane 221 body are both connected to the rotation shaft 21.

[0078] It should be noted that, according to the needs, the plurality of drive motors 30 can be simultaneously driven at the same speed and direction to drive the plurality of rotating vanes 20 to rotate simultaneously, so as to open or close the plurality of gas flow channels 11 simultaneously; or, in the plurality of drive motors 30, part of the drive motors 30 can be simultaneously driven at the same speed and direction to drive part of the rotating vanes 20 to rotate, so as to open or close part of the gas flow channels 11 simultaneously; or, according to the needs, any one of the drive motors 30 can be turned on to open the gas flow channel 11 corresponding to the drive motor 30.

[0079] In the present application, the swing valve further comprises a controller and a sensor 60.

[0080] The controller is electrically connected with the drive motor 30, and the sensor 60, such as a gas flow sensor 60, is installed on the side of the rotating vane 20 away from the target reaction cavity 40 and is electrically connected with the controller. The sensor 60 is used to generate a detection electric signal when detecting that gas flows into the target reaction cavity 40, and transmit the detection electric signal to the controller. The controller generates a closing control electric signal according to the detection electric signal, and transmits the closing control electric signal to the drive motor 30. The drive motor 30 drives the rotating vane 20 to move to the first position according to the closing control electric signal, so as to close the gas flow channel 11, thereby preventing the gas from flowing back into the target reaction cavity 40.

[0081] Specifically, in the technical scheme of the present application that one vane 22 is rotatably connected in each gas flow channel 11, please refer to Figure 2 and Figure 3 In the plurality of gas flow channels 11, at least one sensor 60 is included on each vane 22, and the plurality of sensors 60 on each vane 22 are uniformly spaced along the length direction of the vane 22.

[0082] In the technical scheme of the present application that each gas flow channel 11 comprises a plurality of sub-gas flow channels 111, please refer to Figure 4 and Figure 5 At least one sensor 60 is included on each sub-vane 221, and the plurality of sensors 60 on each sub-vane 221 are uniformly spaced along the length direction of the sub-vane 221.

[0083] In the second aspect, the present application provides a semiconductor processing equipment, which comprises a reaction cavity 40, a vacuum pump 50 and a swing valve.

[0084] Please refer to Figure 1 The vacuum pump 50 is in communication with the reaction cavity 40 and is used to pump the reaction cavity 40. The swing valve is arranged at the communication position of the reaction cavity 40 and the vacuum pump 50, and is used to adjust the flow rate of the gas entering the reaction cavity 40. The swing valve is the swing valve provided in any one of the above embodiments.

[0085] Compared with the prior art, the semiconductor processing equipment provided by the application comprises a reaction cavity 40, a vacuum pump 50 and a swing valve, the vacuum pump 50 is communicated with the reaction cavity 40, and the swing valve is arranged at the communication position of the reaction cavity 40 and the vacuum pump 50, wherein the swing valve comprises a valve plate 10, a rotating blade 20 and a driving motor 30, the valve plate 10 is arranged at the opening of the target reaction cavity 40, a plurality of gas flow channels 11 are arranged on the valve plate 10, the rotating blade 20 is rotatably connected in each gas flow channel 11, each rotating blade 20 is driven by a driving motor 30, and the driving motor 30 drives the rotating blade 20 to rotate to adjust the opening degree of the gas flow channel 11. Compared with the technical scheme of opening the target reaction cavity 40 by swing of the swing valve in the prior art, the influence of the swing valve on the environment in the target reaction cavity 40 when the swing valve is opened is reduced, the stability of the environment in the target reaction cavity 40 is improved, and the particle shedding caused by the rapid change of the gas pressure in the target reaction cavity 40 is prevented, thereby ensuring the quality of the wafer.

[0086] Meanwhile, compared with the technical scheme of opening the reaction cavity 40 by swing of the swing valve in the prior art, since the rotating blade 20 is rotatably connected to the valve plate 10 and is driven by the driving motor 30, when the driving motor 30 drives the rotating blade 20 to open the gas flow channel 11 on the valve plate 10, the valve plate 10 does not need to swing to communicate the reaction cavity 40 with the vacuum pump 50, and the swing position of the valve plate 10 does not need to be reserved on the machine table of the semiconductor processing equipment, thereby reducing the size of the machine table of the semiconductor processing equipment.

[0087] The above is only a preferred embodiment of the application and is not used to limit the application, and any modification, equivalent replacement and improvement made within the spirit and principle of the application should be included in the protection scope of the application.

Claims

1. A swing valve disposed at a communication site of a target reaction chamber and a vacuum pump in a semiconductor processing apparatus, characterized by, The valve plate is arranged at the opening of the target reaction cavity, and a plurality of gas flow channels are arranged on the valve plate and are spaced apart along the radial direction of the valve plate. A plurality of rotating vanes are correspondingly arranged in the plurality of gas flow channels, and each rotating vane is rotatably connected to the corresponding gas flow channel. A plurality of driving motors are correspondingly arranged in the plurality of rotating vanes, and each driving motor is connected to the corresponding rotating vane. The driving motor is used to drive the rotating vane to rotate in the corresponding gas flow channel to adjust the opening degree of the gas flow channel.

2. The swing valve of claim 1, wherein the plurality of driving motors simultaneously or respectively drive the rotating vanes to rotate in the corresponding gas flow channels.

3. The swing valve of claim 2, wherein the rotating vane has a first position and a second position relative to the gas flow channel, the rotating vane closes the gas flow channel when the rotating vane is in the first position, the opening degree of the gas flow channel is at a maximum when the rotating vane is in the second position, and the driving motor drives the rotating vane to rotate from the first position to the second position in a clockwise direction or a counterclockwise direction. The rotating vane comprises: a rotating shaft rotatably connected to the gas flow channel and connected to the driving motor, and a vane connected to the rotating shaft and used to adjust the opening degree of the gas flow channel under the driving of the rotating shaft.

5. The swing valve of claim 4, wherein a plurality of sub-gas flow channels are arranged in the gas flow channel and are spaced apart along the length direction of the gas flow channel, the vane comprises a plurality of sub-vanes spaced apart along the axial direction of the rotating shaft and corresponding to the plurality of sub-gas flow channels, and each sub-vane is rotatably connected to the corresponding sub-gas flow channel.

6. The swing valve of claim 5, wherein the sub-vane has opposite first and second ends along the radial direction of the rotating shaft, the first end is provided with an arc-shaped first curved surface structure, the second end is provided with an arc-shaped second curved surface structure, and the sub-gas flow channel is provided with a third curved surface structure and a fourth curved surface structure on the opposite two side walls along the radial direction of the rotating shaft.

4. The swing valve of claim 3 wherein, When the sub-vane closes the sub-gas flow channel, the first curved surface structure is adapted in the third curved surface structure, and the second curved surface structure is adapted in the fourth curved surface structure.

7. The swing valve of claim 3, wherein the vane comprises a first sub-vane body and a second sub-vane body, and the first sub-vane body and the second sub-vane body are arranged at an angle. Further comprising: a controller electrically connected to the driving motor. ​ ​ ​ ​ ​ ​ ​ ​ ​ 8. The swing valve of claim 1 wherein, ​ ​ A sensor is installed on the side of the rotating vane away from the target reaction cavity and electrically connected to the controller. The sensor is used to generate a detection electrical signal when detecting gas flow into the target reaction cavity and transmit the detection electrical signal to the controller. The controller generates a closing control electrical signal according to the detection electrical signal and transmits the closing control electrical signal to the driving motor. The driving motor closes the gas flow channel according to the closing control electrical signal.

9. The swing valve according to claim 8, wherein: At least one sensor is provided on each rotating vane.

10. A semiconductor processing apparatus, characterized by comprising: It comprises: A reaction cavity; A vacuum pump in communication with the reaction cavity for vacuumizing the reaction cavity; A swing valve provided at the communication site of the reaction cavity and the vacuum pump for adjusting the flow rate of gas into the reaction cavity, wherein the swing valve is any one of the swing valves provided in claims 1-9.

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