Power module, control system and vehicle
By setting the included angle of the conductive parts and the design of the current equalization groove in the power module, the skin effect problem at the junction of the conductive areas is solved, the uniform distribution of current and thermal management are achieved, and the reliability of the power module is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-13
- Publication Date
- 2026-03-24
AI Technical Summary
The skin effect is prone to occur at the junction of conductive areas of different widths in power modules, leading to local hot spots and increasing the probability of failure.
By setting the first and second sides of the conductive part to have an included angle, the width of the conductive part is gradually changed, avoiding sharp corner structures. Combined with the design of the current equalization groove, the current path is smoothed, adapting to the current density changes in different areas.
It effectively prevents local current accumulation, reduces the risk of local overheating, improves the uniformity of current distribution, reduces parasitic inductance, and ensures the reliability of power modules in high-frequency applications.
Smart Images
Figure CN224037818U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of electronic power modules, in particular to a power module, a control system and a vehicle. BACKGROUND
[0002] The power module is a crucial switching element in the control system, which encapsulates various discrete electronic devices according to their functions, realizes the mutual conversion of alternating current and direct current, has the advantages of small size, high power density and high switching frequency, and has been widely used in the field of new energy vehicles.
[0003] In the related art, the power loop of the power module is provided with conductive areas of different widths, which can improve the uniformity of current distribution to a certain extent, but at the junction of conductive areas of different widths, there is a skin effect, which causes local hot spots in the conductive area and greatly increases the failure probability of the power module. CONTENT OF THE INVENTION
[0004] The embodiment of the present application provides a power module, which improves the current sharing capability of the power module and prevents local hot spots from occurring in the power module, thereby at least partially solving the above technical problems.
[0005] In order to achieve the above-mentioned purpose, according to the first aspect of the present application, a power module is provided, comprising:
[0006] a conductive part; and
[0007] a plurality of first power chips arranged on the conductive part;
[0008] The conductive part has a first edge and a second edge, the extension direction of the first edge is the same as the arrangement direction of the plurality of first power chips, and the extension direction of the second edge has an included angle with the extension direction of the first edge, the included angle is greater than 0 and less than 90°.
[0009] Optionally, the included angle is greater than or equal to 1° and less than or equal to 5°.
[0010] Optionally, along the arrangement direction of the plurality of first power chips, the distance between the first edge and the second edge of the conductive part gradually decreases, and the current density of the current required to flow through the conductive part gradually decreases.
[0011] Optionally, a plurality of first current sharing grooves are arranged at the edge of the conductive part.
[0012] Optionally, the plurality of first current sharing grooves are arranged alternately with the first power chips along the arrangement direction of the first power chips.
[0013] Optionally, along the arrangement direction of the plurality of first power chips, the area of the projection of the plurality of first current sharing grooves in the direction perpendicular to the conductive part gradually decreases, and the current density of the current required to flow through the conductive part gradually decreases.
[0014] Optionally, the projection of the first current sharing groove in the direction perpendicular to the conductive part is semicircular in shape.
[0015] Optionally, along the arrangement direction of the plurality of first power chips, the spacing between the plurality of first power chips gradually increases, and the current density of the current required to flow through the conductive part gradually decreases.
[0016] Optionally, the power module further comprises a first conductive base spaced from the conductive part, and a plurality of second power chips are electrically connected to the first conductive base, and the first power chips are electrically connected to the first conductive base, so that the current flows from the input end of the conductive part to the output end of the second power chip.
[0017] Optionally, the first power chip and the second power chip are arranged one by one, and the arrangement direction of the first power chip and the second power chip is perpendicular to the extension direction of the first edge.
[0018] Optionally, the edge of the first conductive base is provided with a plurality of second current sharing grooves.
[0019] Optionally, along the arrangement direction of the plurality of second power chips, the area of the projection of the plurality of second current sharing grooves in the direction perpendicular to the first conductive base gradually decreases, and the current density of the current required to flow through the first conductive base gradually decreases.
[0020] Optionally, the power module further comprises a second conductive base, and the second conductive base is spaced from the first conductive base away from the conductive part, and the output end of the second power chip is electrically connected to the second conductive base, so that the current flows from the input end of the conductive part to the output end of the second conductive base.
[0021] Optionally, along the arrangement direction of the plurality of second power chips, the width of the second conductive base in the direction perpendicular to the arrangement direction of the plurality of second power chips gradually decreases, and the current density of the current on the second conductive base gradually decreases.
[0022] Optionally, the power module further comprises a third conductive base, and the third conductive base is provided with a plurality of first resistors, and the first resistors are electrically connected to the first power chips.
[0023] Optionally, the power module further comprises a fourth conductive substrate, and a plurality of second resistors are arranged on the fourth conductive substrate, and the second resistors are electrically connected with the second power chip.
[0024] Optionally, the power module further comprises a fifth conductive substrate, and a third resistor is arranged on the fifth conductive substrate, and the third resistor is used for monitoring the temperature of the power module.
[0025] According to a second aspect of the present application, a control system is provided, comprising the power module according to the first aspect.
[0026] According to a third aspect of the present application, a vehicle is further provided, comprising the control system according to the second aspect.
[0027] In the power module of the embodiment of the present application, the extension direction of the first edge of the conductive part is arranged to be the same as the arrangement direction of the plurality of power chips, and the extension directions of the first edge and the second edge have an included angle, so that the width of the conductive part is in a gradient state to adapt to the current of different regions, and the width of the conductive part is changed by forming the included angle between the first edge and the second edge and extending, so that the width of the conductive part does not suddenly change in the width changing process of the conductive part, and the first edge and the second edge also do not have the corner structure due to the width change, thereby effectively avoiding the skin effect of the first edge and the second edge, making the current path smoother, and then preventing the current from gathering in a local area, causing local overheating and affecting the normal operation of the power module. In addition, by limiting the included angle between the first edge and the second edge to be greater than 0 and less than 90°, it is beneficial to improve the adaptation range of the conductive part, the current density range that can be adapted is more, and various included angle angles can also be selected according to the actual area on the power module, so as to avoid the conductive part occupying too much area of the power module.
[0028] Other features and advantages of the present application will be described in detail in the following specific embodiments. BRIEF DESCRIPTION OF DRAWINGS
[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creating any creative labor.
[0030] In order to more completely understand the present application and its beneficial effects, the following will be described in conjunction with the drawings, wherein the same reference numerals in the following description represent the same parts.
[0031] Figure 1 is a perspective structural schematic diagram of the power module provided in the exemplary embodiment of the present disclosure;
[0032] Figure 2 This is a front view of the power module provided in an exemplary embodiment of this disclosure;
[0033] Figure 3 This is a schematic diagram of the current flow direction in the power module provided in the exemplary embodiment of this disclosure (the solid arrows in the figure are used to indicate the current flow direction);
[0034] Figure 4 yes Figure 2 An enlarged schematic diagram of part A in the middle;
[0035] Figure 5 This is an exploded view of the first power chip in the power module provided in an exemplary embodiment of this disclosure.
[0036] Explanation of reference numerals in the attached figures:
[0037] 1. Substrate; 2. Conductive part; 21. First power chip; 211. Chip layer; 212. First conductive solder layer; 213. Second conductive solder layer; 214. Metal conductor layer; 22. First current equalization trench; 3. First conductive substrate; 31. Second power chip; 32. Second current equalization trench; 4. Second conductive substrate; 5. Third conductive substrate; 51. First resistor; 6. Fourth conductive substrate; 61. Second resistor; 7. Fifth conductive substrate; 71. Third resistor; 8. DC input terminal; 9. DC output terminal; 10. AC terminal. Detailed Implementation
[0038] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.
[0039] This application provides a power module; please refer to [link / reference]. Figures 1 to 4 .
[0040] The power module includes a conductive part 2 and a plurality of power chips disposed on the conductive part 2. The conductive part 2 has a first side and a second side. The extension direction of the first side is the same as the arrangement direction of the plurality of power chips, and forms an angle with the extension direction of the second side, the angle being greater than 0° and less than 90°.
[0041] The technical scheme provided in the present application sets the extension direction of the first edge of the conductive part 2 to be the same as the arrangement direction of the plurality of power chips, and makes the extension directions of the first edge and the second edge have an included angle, so that the width of the conductive part 2 is in a gradual change state to adapt to the current in different areas, and the width change of the conductive part 2 is obtained by forming an included angle between the first edge and the second edge and extending, so that the width of the conductive part 2 does not suddenly change during the width change of the conductive part 2, and there is no corner structure of the first edge and the second edge due to the width change, thereby effectively avoiding the skin effect of the first edge and the second edge, making the current path smoother, thereby preventing the current from gathering locally, causing local overheating, and affecting the normal operation of the power module. In addition, by limiting the included angle between the first edge and the second edge to be greater than 0 and less than 90°, it is beneficial to improve the adaptation range of the conductive part 2, and the current density range that can be adapted is more, and various included angle angles can also be selected according to the actual area on the power module, avoiding the conductive part 2 occupying too much area of the power module.
[0042] It should be noted that the power module further includes a substrate 1, which is a base for subsequent component setting. The substrate 1 can include a ceramic substrate, an upper metal layer and a lower metal layer, and the upper metal layer and the lower metal layer are respectively arranged on the upper and lower sides of the ceramic substrate, so that the substrate 1 has electrical insulation and heat management characteristics. Illustratively, the ceramic substrate can be ceramic copper clad, ceramic aluminum clad or active metal brazing ceramic. The conductive part 2 is arranged on the substrate 1 and is insulated from the substrate 1, and can dissipate heat through the substrate 1.
[0043] Further, the included angle is greater than or equal to 1° and less than or equal to 5°, which further limits the area of the substrate 1 occupied by the conductive part 2, avoids the area of the conductive part 2 being too large to affect the arrangement of other components on the substrate 1, and also avoids the area of the conductive part 2 being too small to affect the current carrying. By making the first edge and the second edge have an included angle, the distance between the first edge and the second edge of the conductive part 2, i.e. the width of the conductive part 2, can gradually change according to the current density of the current, which is beneficial to improve the uniformity of the current.
[0044] In some embodiments, along the arrangement direction of the plurality of first power chips 21, the distance between the first edge and the second edge of the conductive part 2 gradually decreases, and the current density of the current required to flow through the conductive part 2 gradually decreases. In other words, the distance between the first edge and the second edge of the conductive part 2 and the current density of the current required to flow through the conductive part 2 are positively correlated, so that in the area with large current density, the cross-sectional area of the current carried by the conductive part 2 is larger, effectively avoiding the problem of hot spots caused by excessive local current, and in the area with small current density, the cross-sectional area of the current carried by the conductive part 2 is smaller, so as to save the material of the conductive part 2 and the space of the substrate 1, and avoid the cross-sectional area of the conductive part 2 being too large in the position with small current density, causing excessive current carrying capacity and wasting materials.
[0045] In some embodiments, referring to Figure 4 , the edge of the conductive part 2 is provided with a plurality of first current sharing grooves 22. Exemplarily, any one side or multiple sides of the peripheral edge of the conductive part 2 can be provided with the first current sharing grooves 22, so as to improve the smoothness of the current guided by the conductive part 2 and avoid excessive concentration of the current.
[0046] Further, the plurality of first current sharing grooves 22 are arranged in the arrangement direction of the first power chips 21 and alternately arranged with the first power chips 21, and the first current sharing grooves 22 are arranged close to the first power chips 21. Exemplarily, the output end of the first power chip 21 extends towards the second side, and the first current sharing groove 22 is arranged at the second side. By arranging the plurality of first current sharing grooves 22 in the arrangement direction of the first power chips 21 and alternately arranging the first current sharing grooves 22 with the first power chips 21, the first current sharing grooves 22 can be used to guide and smooth the current around the first power chips 21, reduce the resistance and parasitic inductance of the current path, and make the current more evenly distributed in each first power chip 21, so as to avoid the first power chip 21 from bearing too high current and reduce the risk of failure caused by local overheating of the first power chip 21.
[0047] Further, in the arrangement direction of the plurality of first power chips 21, the area of the projection of the plurality of first current sharing grooves 22 in the direction perpendicular to the conductive part 2 gradually decreases, and the current density of the current required to flow through the conductive part 2 gradually decreases. In other words, the area of the projection of the first current sharing groove 22 in the direction perpendicular to the conductive part 2 is positively correlated with the current density of the current required to flow through the conductive part 2. By such arrangement, the first current sharing groove 22 can be used to respond to the change of the current density. For example, as the current density increases, the current tends to concentrate when passing through, increasing the size of the first current sharing groove 22 can smooth the current path, avoid excessive concentration of the current, and make the current more evenly distributed in each first power chip 21.
[0048] In some embodiments, referring to Figure 4 , the projection of the first current sharing groove 22 in the direction perpendicular to the conductive part 2 is semicircular, and the radius of the semicircle can be between 0.5 mm and 3 mm, which is beneficial to improve the smoothness of the current path, avoid the skin effect at sharp corners, and reduce the resistance and parasitic inductance of the current path.
[0049] In some embodiments, referring to Figure 2 and Figure 4, along the arrangement direction of the plurality of first power chips 21, the spacing between the plurality of first power chips 21 gradually increases, and the current density of the current required to flow through the conductive part 2 gradually decreases. In other words, along the arrangement direction of the plurality of first power chips 21, the spacing between the plurality of first power chips 21 and the current density of the current required to flow through the conductive part 2 are inversely related, which can effectively avoid the phenomenon of current concentration near the first power chip 21, make the current borne by each first power chip 21 more balanced, optimize the electromagnetic field distribution, reduce the mutual inductance effect, thereby reducing the parasitic inductance of the power module, and ensuring the reliability of the power module in high-frequency application scenarios.
[0050] In some embodiments, the power module further comprises a first conductive substrate 3 spaced from the conductive part 2, and a plurality of second power chips 31 are electrically connected on the first conductive substrate 3. The first power chip 21 is electrically connected with the first conductive substrate 3, so that the current flows from the input end of the conductive part 2 to the output end of the second power chip 31. The first conductive substrate 3 and the second conductive substrate 4 are spaced apart along the arrangement direction perpendicular to the first power chip 21, and the input end of the first power chip 21 is electrically connected with the conductive part 2, and the output end is electrically connected with the first conductive substrate 3, and then the second power chip 31 is electrically connected with the first conductive substrate 3, so that the current input by the input end of the conductive part 2 can be transmitted to the output end of the second power chip 31 through the first power chip 21 and the first conductive substrate 3 in turn, realizing the transmission of the current. It should be noted that the flow direction of the current on the conductive part 2 is the same as the flow direction of the current on the first conductive substrate 3, and the distribution direction of the current density is also the same.
[0051] Further, the first power chip 21 and the second power chip 31 are one-to-one aligned, and the arrangement direction of the first power chip 21 and the second power chip 31 is perpendicular to the extension direction of the first side of the conductive part 2, so that the connection path between the first power chip 21 and the second power chip 31 is the shortest, effectively shortening the length of the conductor used by the first power chip 21, so that the conductor of the first power chip 21 can be connected to the first conductive substrate, and also can be close to the second power chip 31 as short as possible, reducing current loss and improving the efficiency of the second power chip 31 receiving current.
[0052] In some embodiments, the edge of the first conductive substrate 3 is provided with a plurality of second current sharing grooves 32. Exemplarily, any one side or multiple sides of the peripheral edge of the first conductive substrate 3 can be provided with the second current sharing groove 32, so as to improve the smoothness of the current guided by the first conductive substrate 3, and avoid excessive concentration of current.
[0053] Further, the plurality of second current-sharing grooves 32 are arranged in the arrangement direction of the second power chips 31 and are arranged alternately with the second power chips 31, and the second current-sharing grooves 32 are arranged close to the second power chips 31. By arranging the plurality of second current-sharing grooves 32 in the arrangement direction of the second power chips 31 and alternately with the second power chips 31, the second current-sharing grooves 32 can guide and smooth the current around the second power chips 31, reduce the resistance and parasitic inductance of the current path, and make the current more evenly distributed in each second power chip 31, so as to avoid the second power chips 31 from bearing too high current and reduce the risk of local overheating of the second power chips 31 leading to failure.
[0054] Further, along the arrangement direction of the plurality of second power chips 31, the area of the projection of the plurality of second current-sharing grooves 32 in the direction perpendicular to the first conductive substrate 3 gradually decreases, and the current density of the current required to flow through the first conductive substrate 3 gradually decreases. In other words, the area of the projection of the second current-sharing groove 32 in the direction perpendicular to the first conductive substrate 3 is positively correlated with the current density of the current required to flow through the first conductive substrate 3. By such arrangement, the second current-sharing groove 32 can respond to the change in current density. As the current density increases, the current tends to concentrate when passing through, increasing the size of the second current-sharing groove 32 can smooth the current path, avoid the current from concentrating too much, and make the current more evenly distributed in each second power chip 31.
[0055] In some embodiments, the projection of the second current-sharing groove 32 in the direction perpendicular to the first conductive substrate 3 is semicircular, and the radius of the semicircle can be between 0.5 mm and 3 mm, which is beneficial to improve the smoothness of the current path, avoid the skin effect at sharp corners, and also beneficial to reduce the resistance and parasitic inductance of the current path.
[0056] In some embodiments, please refer to Figure 1 and Figure 2The power module further comprises a second conductive base 4, which is arranged at a side of the first conductive base 3 away from the conductive part 2, and the output end of the second power chip 31 is electrically connected to the second conductive base 4, so that the current flows from the input end of the conductive part 2 to the output end of the second conductive base 4. For example, the current is input from the input end of the conductive part 2, then flows through the first power chip 21, then flows into the first conductive base 3 from the first power chip 21, then flows into the second power chip 31 from the first conductive base 3, and then the second power chip 31 guides the current to the second conductive base 4, which is output through the output end of the second conductive base 4. It should be noted that the edge of the second conductive base 4 can be provided with a current distribution groove or not, and in this embodiment, the current distribution groove is not provided, because the second conductive base 4 is mainly used for outputting current, and no power chip is arranged on the second conductive base 4, so the current distribution groove is not required.
[0057] Further, along the arrangement direction of the plurality of second power chips 31, the width of the second conductive base 4 in the direction perpendicular to the arrangement direction of the plurality of second power chips 31 gradually decreases, and the current density of the current on the second conductive base 4 gradually decreases. In other words, the width of the second conductive base 4 in the direction perpendicular to the arrangement direction of the plurality of second power chips 31 is positively correlated with the current density of the current required to flow through the second conductive base 4, so that in the area with large current density, the cross-sectional area of the current carried by the second conductive base 4 is larger, effectively avoiding the problem of hot spots caused by excessive local current, and in the area with small current density, the cross-sectional area of the current carried by the second conductive base 4 is smaller, so as to save the material of the second conductive base 4 and the space of the substrate 1, and avoid that the cross-sectional area of the second conductive base 4 is too large in the position with small current density, resulting in excessive current carrying capacity and material waste.
[0058] In some embodiments, referring to Figure 1 and Figure 2 , the power module further comprises a direct current input terminal 8, a direct current output terminal 9, and an alternating current terminal 10. The direct current input terminal 8 is connected to one side of the conductive part 2 in the arrangement direction of the plurality of first power chips 21, so that the current can be input to the conductive part 2 through the direct current input terminal 8. The direct current output terminal 9 is connected to one side of the second conductive base 4 in the arrangement direction of the plurality of first power chips 21, and is arranged on the same side as the direct current input terminal 8, so that the current can be output to the direct current output terminal 9 through the second conductive base 4. The alternating current terminal 10 is electrically connected to the first conductive base 3 and located on the side opposite to the direct current input terminal 8.
[0059] It should be noted that, referring to Figure 3For the current on the conductive part 2, because the DC input terminal 8 is connected with the conductive part 2, the current density gradually decreases along the direction of the conductive part 2 away from the DC input terminal 8, and correspondingly, the width of the conductive part 2 in the direction perpendicular to the extension direction of the first side also gradually decreases to adapt to the change of the current density. For the current on the second conductive substrate 4, because the DC output terminal 9 is connected with the second conductive substrate 4, and the DC output terminal 9 is located on the same side as the DC input terminal 8, the direction of the current on the second conductive substrate 4 is opposite to that on the conductive part 2, and the current density gradually increases along the direction close to the DC input terminal 8, and correspondingly, the width of the second conductive substrate 4 in the direction perpendicular to the extension direction of the first side also gradually increases along the direction close to the DC input terminal 8 to adapt to the change of the current density, improve the uniformity of the current distribution, and avoid the problem of local hot spots. For the first conductive substrate 3, because it is not connected with the DC input terminal 8 and the DC output terminal 9, and only serves as a current-conducting conductive substrate, the change of the current density on the substrate is not large, so the area utilization of the substrate 1 is taken as a priority factor in this embodiment, and the width of the first conductive substrate 3 is set to gradually increase along the direction close to the AC terminal 10 to adapt to the width changes of the second conductive substrate 4 and the conductive part 2, and improve the area utilization of the substrate 1. Although there is also a certain difference in the current density on the first conductive substrate 3, and the current density gradually decreases along the direction towards the AC terminal 10, but because the difference is relatively small, even if the width change trend of the first conductive substrate 3 is opposite to the change trend of the current density, the problem of current aggregation and local overheating will not occur due to the difference in the current density.
[0060] It should be further pointed out that, because the first conductive substrate 3 is provided with the second power chip 31, a plurality of second current-distributing grooves 32 are arranged on the edge of the first conductive substrate 3, and at least one second current-distributing groove 32 is arranged between adjacent two second power chips 31, which is beneficial to improve the balance of the current density around the second power chip 31 and avoid the phenomenon of current concentration near the second power chip 31.
[0061] In some embodiments, referring to Figure 1 and Figure 2 , the power module further comprises a third conductive substrate 5, a fourth conductive substrate 6 and a fifth conductive substrate 7. The third conductive substrate 5 is arranged on the side of the conductive part 2 away from the first conductive substrate 3, the fourth conductive substrate 6 is arranged on the side of the second conductive substrate 4 away from the conductive part 2, so that the third conductive substrate 5 is close to the conductive part 2 and the fourth conductive substrate 6 is close to the second conductive substrate 4. The side of the third conductive substrate 5 close to the DC output terminal 9 is provided with a avoiding gap, and the fifth conductive substrate 7 is located at the avoiding gap, and the third conductive substrate 5, the fourth conductive substrate 6 and the fifth conductive substrate 7 are all arranged on the substrate 1 to improve the area utilization of the substrate 1.
[0062] Furthermore, a plurality of first resistors 51 are provided on the third conductive substrate 5, and each first resistor 51 is connected to a corresponding first power chip 21. For example, the gate of the first power chip 21 is electrically connected to the first resistor 51 to prevent the first power chip 21 from generating excessive peak voltage during high-frequency switching of the power module. Similarly, a plurality of second resistors 61 are provided on the fourth conductive substrate 6, and each second resistor 61 is connected to a corresponding second power chip 31. For example, the gate of the second power chip 31 is electrically connected to the second resistor 61 to prevent the second power chip 31 from generating excessive peak voltage during high-frequency switching of the power module. A third resistor 71 is provided on the fifth conductive substrate 7. The third resistor 71 is a thermistor used to monitor the temperature of the power module in real time to prevent the power chip from failing due to excessive temperature.
[0063] It should be noted that the first power chip 21 and the second power chip 31 can have the same structure, and both are metal-oxide-semiconductor field-effect transistor (MOSFET) chips or reverse-conducting insulated-gate bipolar transistor (IGBT) chips. Both the first power chip 21 and the second power chip 31 employ double-sided silver sintering technology to improve electrical performance and heat dissipation. Since the first power chip 21 and the second power chip 31 have the same structure, only the specific structure of the first power chip 21 will be described below; the structure of the second power chip 31 can be referenced from that of the first power chip 21.
[0064] For example, please see Figure 5 The first power chip 21 includes a chip layer 211, a first conductive solder layer 212, a second conductive solder layer 213, and a metal conductor layer 214. The first conductive solder layer 212 is disposed on one side of the chip layer 211, the second conductive solder layer 213 is disposed on the side of the chip layer 211 away from the first conductive solder layer 212, and the metal conductor layer 214 is disposed on the side of the first conductive solder layer 212 away from the chip layer 211. The metal conductor layer 214 is used for electrical connection with external structures, and the second conductive solder layer 213 can be soldered to the conductive part 2 to fix the first power chip 21 and form an electrical connection. The stacking of the four layers—chip layer 211, first conductive solder layer 212, second conductive solder layer 213, and metal conductor layer 214—is beneficial for improving the structural stability of the first power chip 21.
[0065] The manufacturing process for the first power chip 21 may include:
[0066] The first conductive solder layer 212 and the second conductive solder layer 213 are coated on the upper and lower sides of the chip layer 211, and both of them are made of silver solder. The silver solder is aligned with the metal conductor layer 214 and the designated position of the conductive part 2 respectively, and appropriate pressure is applied to ensure tight adhesion. The chip layer 211 with the first conductive solder layer 212 and the second conductive solder layer 213 tightly adhered is placed in a high-temperature sintering furnace, and the silver solder starts to melt, which helps to remove bubbles and ensure the reliability of the connection. After sintering is completed, the temperature gradually decreases to form a solid connection.
[0067] The power module provided in the present application is subjected to finite element simulation, and the parasitic inductance under different switching frequencies is compared. The simulation results show that, in the range of 100MHz to 500MHz of switching frequency, the parasitic inductance of the power module provided in the present application can be reduced by about 3% compared with the parasitic inductance of the conventional power module.
[0068] According to the second aspect disclosed in the present application, a control system is provided, which comprises the power module in any of the foregoing embodiments. Since the control system has all the structures and advantages of the power module described above, the present embodiment will not be described here.
[0069] According to the third aspect disclosed in the present application, a vehicle is provided, which comprises the control system in any of the foregoing embodiments. The vehicle has all the advantages of the control system described above, and the present disclosure will not be described here.
[0070] In the description of the present application, the terms "first", "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.
[0071] In the above embodiments, the description of each embodiment is focused on, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.
[0072] The embodiments, implementation manners and related technical features of the present application can be combined, replaced or modified without conflict.
[0073] The above is only the preferred embodiment of the present application, and does not limit the present application in any form. Any simple modification, equivalent change and modification made to the above embodiment according to the technical essence of the present application, without departing from the technical solution of the present application, still belongs to the scope of the technical solution of the present application.
Claims
1. A power module, characterized in that, include: Conductive part (2); as well as A plurality of first power chips (21) are disposed on the conductive part (2); The conductive part (2) has a first side and a second side. The extension direction of the first side is the same as the arrangement direction of the plurality of first power chips (21) and has an angle with the extension direction of the second side. The angle is greater than 0 and less than 90°.
2. The power module according to claim 1, characterized in that, The included angle is greater than or equal to 1° and less than or equal to 5°.
3. The power module according to claim 1, characterized in that, Along the arrangement direction of the plurality of first power chips (21), the distance between the first side and the second side of the conductive part (2) gradually decreases, and the current density of the current required to flow through the conductive part (2) gradually decreases.
4. The power module according to claim 1, characterized in that, The conductive part (2) has multiple first flow equalization grooves (22) on its edge.
5. The power module according to claim 4, characterized in that, Multiple first flow equalization slots (22) are arranged at intervals along the arrangement direction of the first power chip (21) and are alternately arranged with the first power chip (21).
6. The power module according to claim 4, characterized in that, Along the arrangement direction of the plurality of first power chips (21), the area of the projection of the plurality of first current equalization grooves (22) in the direction perpendicular to the conductive part (2) gradually decreases, and the current density of the current required to flow through the conductive part (2) gradually decreases.
7. The power module according to claim 4, characterized in that, The first flow equalization groove (22) has a semi-circular shape when projected in a direction perpendicular to the conductive part (2).
8. The power module according to claim 1, characterized in that, Along the arrangement direction of the plurality of first power chips (21), the spacing between the plurality of first power chips (21) gradually increases, and the current density of the current required to flow through the conductive part (2) gradually decreases.
9. The power module according to any one of claims 1 to 8, characterized in that, The power module further includes a first conductive substrate (3) spaced apart from the conductive part (2). A plurality of second power chips (31) are electrically connected to the first conductive substrate (3). The first power chip (21) is electrically connected to the first conductive substrate (3) so that current flows from the input end of the conductive part (2) to the output end of the second power chip (31).
10. The power module according to claim 9, characterized in that, The first power chip (21) and the second power chip (31) are arranged in a one-to-one correspondence, and the arrangement direction of the first power chip (21) and the second power chip (31) is perpendicular to the extension direction of the first side.
11. The power module according to claim 9, characterized in that, The edge of the first conductive substrate (3) is provided with a plurality of second flow equalization grooves (32).
12. The power module according to claim 11, characterized in that, Along the arrangement direction of the plurality of second power chips (31), the area of the projection of the plurality of second current equalizing grooves (32) in the direction perpendicular to the first conductive substrate (3) gradually decreases, and the current density of the current required to flow through the first conductive substrate (3) gradually decreases.
13. The power module according to claim 9, characterized in that, The power module further includes a second conductive substrate (4), which is spaced apart from the first conductive substrate (3) on the side away from the conductive part (2). The output terminal of the second power chip (31) is electrically connected to the second conductive substrate (4) so that current flows from the input terminal of the conductive part (2) to the output terminal of the second conductive substrate (4).
14. The power module according to claim 13, characterized in that, Along the arrangement direction of the plurality of second power chips (31), the width of the second conductive substrate (4) in the direction perpendicular to the arrangement direction of the plurality of second power chips (31) gradually decreases, and the current density of the current on the second conductive substrate (4) gradually decreases.
15. The power module according to claim 9, characterized in that, The power module also includes a third conductive substrate (5), on which a plurality of first resistors (51) are provided, and the first resistors (51) are electrically connected to the first power chip (21).
16. The power module according to claim 9, characterized in that, The power module also includes a fourth conductive substrate (6), on which a plurality of second resistors (61) are provided, and the second resistors (61) are electrically connected to the second power chip (31).
17. The power module according to claim 9, characterized in that, The power module also includes a fifth conductive substrate (7), on which a third resistor (71) is provided for monitoring the temperature of the power module.
18. A control system, characterized in that, Includes the power module as described in any one of claims 1 to 17.
19. A vehicle, characterized in that, Includes the control system as described in claim 18.