Wafer deposition device and wafer deposition equipment

Abstract

The utility model provides a wafer deposition device and wafer deposition equipment, and relates to the semiconductor technology field, the wafer deposition device comprises a wafer placing platform and a rotary shielding cover, the wafer placing platform is provided with a placing groove used for accommodating a wafer, the rotary shielding cover is rotatably assembled on the wafer placing platform and covers the placing groove, and the rotary shielding cover is arranged on the wafer placing platform. The top side of the rotary shielding cover is provided with a deposition gas port penetrating to the placing groove, the wafer placing platform is also provided with a ventilation hole penetrating to the placing groove, and the rotary shielding cover selectively shields the ventilation hole. Compared with the prior art, the utility model has the advantages that the normal deposition effect can be ensured, the gas concentration descending trend of the rear section is slowed down, the gas concentration descending speed is reduced, and the uniformity of the deposited film is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, specifically, a wafer deposition device and wafer deposition equipment. BACKGROUND

[0002] With the rapid development of the semiconductor industry, chemical vapor deposition is a kind of chemical technology, which mainly uses one or several gas phase compounds or elements containing thin film elements on the substrate surface to generate thin film by chemical reaction. In the deposition process, the reaction cavity passes through the reaction gas, and with the extension of the reaction time, the gas concentration decreases, and the reaction gas needs to be supplemented in time to ensure the uniformity of the deposited film.

[0003] The inventor found that the conventional deposition platform has a more obvious decrease in gas concentration due to the use of an open platform structure. The existing technology also has a ring-shaped deposition platform with a slotted shape, which can improve the gas concentration in the cavity to some extent. However, this structure form is difficult to slow down the trend of gas concentration decrease due to weak constraint on process gas, and it is difficult to ensure the uniformity of the deposited film. SUMMARY

[0004] The utility model aims at providing a wafer deposition device and wafer deposition equipment, which can slow down the trend of gas concentration decrease while ensuring normal deposition effect, reduce the speed of gas concentration decrease, and improve the uniformity of the deposited film.

[0005] The utility model embodiment is realized by the following scheme:

[0006] In one aspect, the utility model embodiment provides a wafer deposition device, which comprises a wafer placing platform and a rotating shielding cover, the wafer placing platform is provided with a placing groove for accommodating a wafer, the rotating shielding cover is rotatably assembled on the wafer placing platform and covers the placing groove, the top side of the rotating shielding cover is provided with a deposition gas port penetrating into the placing groove, the wafer placing platform is also provided with a flow-through air hole penetrating into the placing groove, and the rotating shielding cover selectively shields the flow-through air hole.

[0007] In an optional embodiment, the wafer placing platform comprises a base platform and a ring-shaped wall, the ring-shaped wall is integrally arranged around the edge of the base platform and forms the placing groove, the rotating shielding cover is rotatably arranged on the ring-shaped wall, and the flow-through air hole is arranged on the side wall of the ring-shaped wall and penetrates through the ring-shaped wall.

[0008] In an optional embodiment, the flow-through air holes are multiple, and the multiple flow-through air holes are arranged at the outer sidewall of the annular wall in a spaced manner, and the heights of the multiple flow-through air holes relative to the base platform are the same.

[0009] In an optional embodiment, the rotating shielding cover comprises a cover body and a sidewall shielding piece, the deposition gas port is arranged on the cover body, the sidewall shielding piece is arranged at the edge of the cover body and protrudes downward relative to the cover body, the cover body is placed on the annular wall, and the sidewall shielding piece is used for selectively shielding the flow-through air hole.

[0010] In an optional embodiment, the annular wall is in a circular ring shape, the cover body is in a circular disc shape and is matched with the annular wall, and the sidewall shielding piece is in an arc shape and is attached to the sidewall of the annular wall.

[0011] In an optional embodiment, the sidewall shielding piece is in a semicircular arc shape.

[0012] In an optional embodiment, the protruding height of the sidewall shielding piece relative to the cover body is the same as the height of the annular wall relative to the base platform.

[0013] In an optional embodiment, the shape of the deposition gas port is matched with the shape of the placing groove, and the deposition gas port is arranged concentrically with the cover body.

[0014] In an optional embodiment, the deposition gas port is multiple, and the multiple deposition gas ports are uniformly distributed on the cover body, and each deposition gas port is communicated to the placing groove.

[0015] In another aspect, the embodiment of the utility model provides a wafer deposition device, including process chamber and wafer deposition device, wafer placing platform is arranged in process chamber.

[0016] The embodiment of the utility model has the advantages of:

[0017] The wafer deposition apparatus and equipment provided in this embodiment of the invention include a wafer placement platform with a placement slot for accommodating wafers. A rotating shield is rotatably mounted on the wafer placement platform and covers the placement slot. A deposition gas port is provided on the top side of the rotating shield, allowing reactive gases to be introduced and deposited on the wafer surface. Furthermore, a flow-through vent is provided on the wafer placement platform, allowing some reactive gases to flow out, thus facilitating gas flow. The rotating shield selectively blocks the flow-through vent. During actual deposition, in the front-end process, the gas concentration in the reaction chamber is high, and both the flow-through vent and the deposition gas port are open, allowing gas to enter through the deposition gas port and deposit on the wafer surface. Excess gas can flow through the flow-through vent, ensuring gas flow. In the subsequent process, the gas concentration in the reaction chamber decreases. The rotating shield blocks the flow-through vent, confining the lower-concentration process gas within a narrower placement slot. As subsequent process gases are introduced, the process gas concentration in the placement slot is increased again, achieving normal and uniform deposition. Compared with existing technologies, this invention can slow down the decline in gas concentration in the later stages, reduce the rate of gas concentration decline, and improve the uniformity of the deposited film while ensuring normal deposition effect. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Fig. 1 A schematic diagram showing the opening of the ventilation hole in the wafer deposition apparatus provided in this embodiment of the present invention;

[0020] Fig. 2 A schematic diagram of a partially closed vent hole in a wafer deposition apparatus provided for an embodiment of this utility model;

[0021] Fig. 3 This is an exploded view of the wafer deposition apparatus provided in an embodiment of the present invention;

[0022] Fig. 4 This is a schematic diagram of the structure of a rotating shielding cover provided in another embodiment of the present invention.

[0023] Icons: 100-Wafer deposition apparatus; 110-Wafer placement platform; 111-Substrate platform; 113-Annular enclosure; 130-Rotating shield; 131-Cover body; 133-Side wall shield; 150-Placement slot; 170-Deposition vent; 190-Flow vent. DETAILED DESCRIPTION

[0024] In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some but not all of the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0026] It should be noted that: similar reference numbers and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0027] In the description of the present application, it should be noted that if the terms "upper", "lower", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship of the product of the present application when it is usually placed, which is only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0028] In addition, if the terms "first", "second" and the like appear, they are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0029] It should be noted that the features in the embodiments of the present application can be combined with each other without conflict.

[0030] The embodiments of the present application provide a wafer deposition device, which can slow down the trend of decrease of the concentration of the gas in the later stage, reduce the speed of decrease of the concentration of the gas, and improve the uniformity of the deposited film while ensuring normal deposition effect.

[0031] Referring to Figs. 1 to 4The utility model embodiment provides a kind of wafer deposition device 100, including wafer placement platform 110 and rotating shield cover 130, wafer placement platform 110 is provided with the placement slot 150 for accommodating wafer, rotating shield cover 130 is rotatably assembled on wafer placement platform, and cover is set in placement slot 150, the top side of rotating shield cover 130 is provided with the deposition gas port 170 that is through to placement slot 150, wafer placement platform 110 is further provided with the through-flow air hole 190 that is through to placement slot 150, rotating shield cover 130 selectively shields through-flow air hole 190.

[0032] It needs to be explained that wafer deposition device 100 is placed in reaction chamber in the embodiment, the reaction chamber is consistent with conventional deposition chamber, here is not introduced too much.In actual deposition, gas concentration is higher in reaction cavity in front section process, through-flow air hole 190 and deposition gas port 170 are all open state, gas can be entered by deposition gas port 170 and is deposited on wafer surface, and excess gas can flow to through-flow air hole 190, to ensure gas flow.And gas concentration is reduced in reaction cavity in later section process, can shield through-flow air hole 190 using rotating shield cover 130, so that the process gas with lower concentration is constrained in the narrow placement slot 150, and the process gas concentration in placement slot 150 is re-boosted along with the subsequent process gas, to realize normal uniform deposition.

[0033] In some embodiments, wafer placement platform 110 includes base platform 111 and annular wall 113, annular wall 113 is integrally surrounded in the edge of base platform 111, and is formed to place slot 150, rotating shield cover 130 is rotatably placed on annular wall 113, and through-flow air hole 190 is arranged on the side wall of annular wall 113 and penetrates annular wall 113.Specifically, annular wall 113 is integrally formed with base platform 111, and through-flow air hole 190 penetrates annular wall 113 along the horizontal direction, so that placement slot 150 is communicated with the outside.And annular wall 113 can carry rotating shield cover 130, which is placed on the top side surface of annular wall 113 and can rotate along annular wall 113, to open or close through-flow air hole 190.

[0034] Further, the through-flow air hole 190 is a plurality of, and the plurality of through-flow air holes 190 are arranged at the outer side wall of the annular wall 113, and the plurality of through-flow air holes 190 have the same height relative to the base platform 111. Specifically, the plurality of through-flow air holes 190 are arranged along the same horizontal direction, which can ensure the uniformity of the airflow. Among them, the aperture of the through-flow air hole 190 is much smaller than the inner diameter of the deposition gas port 170, which can ensure that the process gas mainly enters and deposits through the deposition gas port 170.

[0035] In some embodiments, the rotating shielding cover 130 comprises a cover body 131 and a side wall shielding piece 133, the deposition gas port 170 is formed on the cover body 131, the side wall shielding piece 133 is arranged at the edge of the cover body 131 and protrudes downward relative to the cover body 131, the cover body 131 is placed on the annular wall 113, and the side wall shielding piece 133 is used for selectively shielding the flow-through air holes 190. Specifically, the side wall shielding piece 133 is integrally arranged at the bottom side edge of the cover body 131 and protrudes downward. With the rotation of the cover body 131 relative to the annular wall 113, the side wall shielding piece 133 can be rotated to open or close the plurality of flow-through air holes 190.

[0036] It should be noted that, in order to better realize the rotation between the cover body 131 and the annular wall 113, a ring-shaped sliding groove can be designed at the top side of the annular wall 113, and a ring-shaped sliding block is arranged at the bottom side of the cover body 131, which can be slidably arranged in the ring-shaped sliding groove. On the one hand, through the design of the ring-shaped sliding groove, the positioning accuracy of the cover body 131 can be ensured, and on the other hand, the friction between the cover body 131 and the annular wall 113 can be reduced, so that the rotation can be better realized.

[0037] In some embodiments, the annular wall 113 is in the shape of a ring, the cover body 131 is in the shape of a disc and is matched with the annular wall 113, and the side wall shielding piece 133 is in the shape of an arc and is attached to the side wall of the annular wall 113. Specifically, the outer diameter of the cover body 131 is matched with the outer diameter of the annular wall 113, and the outer diameter of the cover body 131 is slightly larger than the outer diameter of the annular wall 113, so that there is a small gap between the side wall shielding piece 133 and the side wall of the annular wall 113, thereby avoiding interference.

[0038] In some embodiments, the side wall shielding piece 133 is in the shape of a semicircular arc. The plurality of flow-through air holes 190 are distributed along the semicircular arc on the outer side wall of the annular wall 113, and the side wall shielding piece 133 is also in the shape of a semicircular arc, so that the side wall shielding piece 133 can completely shield the plurality of flow-through air holes 190, thereby ensuring the shielding effect.

[0039] In some embodiments, the protruding height of the side wall shielding piece 133 relative to the cover body 131 is the same as the height of the annular wall 113 relative to the base platform 111. Specifically, the bottom side edge of the side wall shielding piece 133 is flush with the surface of the base platform 111, thereby further ensuring the shielding effect of the side wall shielding piece 133 on the plurality of flow-through air holes 190.

[0040] In some embodiments, the shape of the deposition gas port 170 is matched with the shape of the placing groove 150, and the deposition gas port 170 is concentrically arranged with the cover body 131. Specifically, the deposition gas port 170 is circular and has a size comparable to that of the placing groove 150, thereby ensuring that the reaction gas enters the deposition gas port 170.

[0041] In other preferable embodiments of the utility model, the deposition gas ports 170 are multiple, the multiple deposition gas ports 170 are evenly distributed on the cover body 131, and each deposition gas port 170 is communicated to the placing groove 150. Specifically, the multiple deposition gas ports 170 can be arrayed on the cover body 131, each deposition gas port 170 is circular and has a diameter smaller than that of the placing groove 150. By arranging the multiple deposition gas ports 170, the reaction gas can also be ensured to enter the inside of the deposition gas port 170.

[0042] The utility model embodiment further provides a wafer deposition equipment, including process chamber and wafer deposition device 100 of preceding, wafer deposition device 100 includes wafer placing platform 110 and rotating shield cover 130, wafer placing platform 110 is provided with the placing groove 150 for accommodating wafer, rotating shield cover 130 rotatably assembled on wafer placing platform and cover sets up in placing groove 150, and the top side of rotating shield cover 130 is provided with the deposition gas port 170 that penetrates to placing groove 150, wafer placing platform 110 is further provided with the through-flow air hole 190 that penetrates to placing groove 150, and rotating shield cover 130 selectively shields through-flow air hole 190. Wherein wafer placing platform sets up in process chamber.

[0043] In actual deposition, the assembly of wafer deposition device 100 can be completed first, the wafer is placed in the placing groove 150 of wafer placing platform 110, then the rotating shield cover 130 is covered, and the through-flow air hole 190 is all opened. Then, the wafer deposition device 100 is loaded into the reaction chamber, and normal deposition is carried out. In the later stage of the deposition process, the mechanical arm inside the reaction chamber or the additional power member designed on the wafer deposition device 100 can be used to drive the rotating shield cover 130 to rotate, so that the multiple through-flow air holes 190 can be closed, the process gas with low concentration is constrained in the narrow placing groove 150, and the concentration of the process gas in the placing groove 150 is increased again with the subsequent process gas, so that normal and uniform deposition is realized.

[0044] In summary, the wafer deposition apparatus 100 and wafer deposition equipment provided in this embodiment of the present invention have a placement slot 150 for accommodating wafers on a wafer placement platform 110. A rotating shield 130 is rotatably mounted on the wafer placement platform and covers the placement slot 150. A deposition gas port 170 is also provided on the top side of the rotating shield 130, allowing reactive gases to be introduced and deposited on the wafer surface. Furthermore, a flow vent 190 is provided on the wafer placement platform 110, allowing some reactive gases to flow out, thus facilitating gas flow. The rotating shield 130 selectively blocks the flow vent 190. During actual deposition, the gas concentration in the reaction chamber is high during the front-end process, and both the flow vent 190 and the deposition gas port 170 are open. Gas can enter through the deposition gas port 170 and deposit on the wafer surface, while excess gas can flow to the flow vent 190, ensuring gas flow. In subsequent processes, the gas concentration in the reaction chamber decreases. A rotating shielding cover 130 can be used to block the flow vent 190, thus confining the lower-concentration process gas within a narrower placement tank 150. As subsequent process gases are introduced, the gas concentration within the placement tank 150 is restored, achieving normal and uniform deposition. Compared to existing technologies, this invention can slow down the decline in gas concentration in subsequent processes while ensuring normal deposition results, reducing the rate of gas concentration decrease and improving the uniformity of the deposited film.

[0045] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the protection scope of the claims.

Claims

1. A wafer deposition apparatus, characterized by, The wafer deposition device comprises a wafer placing platform and a rotating shielding cover, the wafer placing platform is provided with a placing groove for accommodating a wafer, the rotating shielding cover is rotatably assembled on the wafer placing platform and covers the placing groove, a deposition gas port is arranged on the top side of the rotating shielding cover and penetrates the placing groove, and the wafer placing platform is further provided with a flow-through air hole penetrating the placing groove, and the rotating shielding cover selectively shields the flow-through air hole.

2. The wafer deposition apparatus of claim 1, wherein The wafer placing platform comprises a base platform and an annular wall, the annular wall is integrally arranged around the edge of the base platform and forms the placing groove, the rotating shielding cover is rotatably arranged on the annular wall, and the flow-through air hole is arranged on the side wall of the annular wall and penetrates the annular wall.

3. The wafer deposition apparatus of claim 2, wherein The flow-through air hole is a plurality of flow-through air holes, the plurality of flow-through air holes are arranged at intervals on the outer side wall of the annular wall, and the heights of the plurality of flow-through air holes relative to the base platform are the same.

4. The wafer deposition apparatus of claim 2, wherein The rotating shielding cover comprises a cover body and a side wall shielding piece, the deposition gas port is arranged on the cover body, the side wall shielding piece is arranged at the edge of the cover body and protrudes downward relative to the cover body, the cover body is arranged on the annular wall, and the side wall shielding piece is used for selectively shielding the flow-through air hole.

5. The wafer deposition apparatus of claim 4, wherein The annular wall is in the shape of a circular ring, the cover body is in the shape of a disc and is matched with the annular wall, the side wall shielding piece is in the shape of an arc and is attached to the side wall of the annular wall.

6. The wafer deposition apparatus of claim 5, wherein The side wall shielding piece is in the shape of a semicircle.

7. The wafer deposition apparatus of claim 5, wherein The protruding height of the side wall shielding piece relative to the cover body is the same as the height of the annular wall relative to the base platform.

8. The wafer deposition apparatus of claim 4, wherein The shape of the deposition gas port is matched with the shape of the placing groove, and the deposition gas port is concentrically arranged on the cover body.

9. The wafer deposition apparatus of claim 4, wherein The deposition gas port is a plurality of deposition gas ports, the plurality of deposition gas ports are uniformly distributed on the cover body, and each deposition gas port is connected to the placing groove.

10. A wafer deposition apparatus, characterized by, The wafer deposition device comprises a process chamber and the wafer deposition device according to any one of claims 1-9, and the wafer placing platform is arranged in the process chamber.

Images