Air supply system of wafer processing equipment and wafer processing equipment

Abstract

A gas supply system for wafer processing equipment and wafer processing equipment, the wafer processing equipment comprises at least one reaction chamber for accommodating wafers, the gas supply system comprises: a gas storage device for storing reaction gas; the connecting pipe is connected between the gas storage device and a first reaction cavity in the at least one reaction cavity, and a heating device used for heating reaction gas introduced into the connecting pipe and a temperature detection device used for detecting the temperature of a set position of the connecting pipe to obtain sampling temperature are arranged on the connecting pipe; a control valve is further arranged on the connecting pipe, and the control valve is configured to be switched to a turn-off state when the sampling temperature is out of the target temperature range, so that the gas storage device stops supplying the reaction gas to the first reaction cavity. The reaction gas is prevented from crystallizing in the pipeline to form crystal substances, and the maintenance workload during resuming is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, more particularly to a wafer processing equipment's gas supply system and wafer processing equipment. BACKGROUND

[0002] In the preparation process of the wafer, the chemical vapor deposition (CVD) process is often used to deposit a film layer on the wafer surface. Specifically, the wafer is placed in the reaction cavity of the chemical vapor deposition equipment, and the reaction gas is introduced into the reaction cavity through the connecting pipe between the gas storage device and the reaction cavity. The reaction gas is sprayed to the wafer surface through the shower head to deposit a film layer on the wafer surface.

[0003] In the related art, a heating control function is added. Specifically, a heating belt is provided on the connecting pipe, which can heat and transport the reaction gas in the connecting pipe. However, when the heating belt fails or other abnormal conditions occur, the related art cannot stop the chemical vapor deposition process in time, resulting in the formation of crystalline material in the delivery pipeline of the reaction gas and on the surface of the shower head, increasing the maintenance workload when the chemical vapor deposition equipment is restarted (restarting). SUMMARY

[0004] A series of simplified concepts are introduced in the summary part of the utility model. This will be further described in detail in the detailed description part. The summary part of the utility model does not mean to try to limit the key features and necessary technical features of the claimed technical solution, nor does it mean to try to determine the protection scope of the claimed technical solution.

[0005] To solve the existing problems, the utility model embodiment provides a wafer processing equipment gas supply system. The wafer processing equipment includes at least one reaction cavity for accommodating wafers. The gas supply system includes:

[0006] a gas storage device for storing reaction gas; and

[0007] a connecting pipe connected between the gas storage device and the first reaction cavity of the at least one reaction cavity, wherein the connecting pipe is provided with a heating device for heating the reaction gas introduced into the connecting pipe, and a temperature detection device for detecting the temperature of the set position of the connecting pipe to obtain a sampling temperature;

[0008] The connecting pipe is also provided with a control valve configured to switch to an off state when the sampling temperature is outside the target temperature range, so that the gas storage device stops supplying reaction gas to the first reaction cavity.

[0009] In some embodiments of the present application, the gas supply system further includes:

[0010] A thermostat connected between the heating device and the temperature sensing device; and,

[0011] The first relay is connected between the thermostat and the control valve;

[0012] The temperature controller is used to compare the sampled temperature with the target temperature range. When the comparison result shows that the sampled temperature is outside the target temperature range, it sends a first electrical control signal to the first relay so that the first relay controls the control valve to switch to the off state.

[0013] In some embodiments of this application, the gas supply system further includes an alarm connected to a thermostat, wherein the thermostat sends a first electrical control signal to the first relay while simultaneously sending the first electrical control signal to the alarm, so that the alarm emits an alarm signal.

[0014] In some embodiments of this application, the connecting pipe includes: at least two branch pipes, each connected to the gas storage device, and each branch pipe is provided with a control valve and is connected to the first reaction chamber through the control valve.

[0015] The first relay is connected between the temperature controller and all the control valves, and the first relay is configured to: after receiving the first electrical control signal, control all the control valves to switch to the off state so that all the branch pipes stop supplying reaction gas to the first reaction chamber.

[0016] In some embodiments of this application, the first relay is further configured to: after receiving a second electrical control signal sent by the temperature controller, control all control valves to switch to the on state so that all branch pipes supply reaction gas to the first reaction chamber.

[0017] In some embodiments of this application, the first relay includes:

[0018] The control port connected to the thermostat; and,

[0019] At least two sets of load ports, each set of load ports corresponds to a control valve and is electrically connected to the corresponding control valve;

[0020] After receiving the first electrical control signal, all load ports are in the first state to control all control valves to switch to the off state.

[0021] After receiving the second electrical control signal from the temperature controller, all load ports are in the second state to control all control valves to switch to the on state.

[0022] In some embodiments of this application, the connecting pipe further includes a manifold connecting the first reaction chamber and all the branch pipes;

[0023] The heating device includes a heating belt installed on the manifold, which is used to heat the reaction gas introduced into the manifold;

[0024] The temperature detection device is used to detect the temperature at a set location on the manifold to obtain the sampling temperature.

[0025] In some embodiments of this application, the reaction gases stored in the gas storage device include: trimethyl borate gas, trimethyl phosphate gas, and tetraethyl orthosilicate gas;

[0026] At least two branch pipes are included, namely a first branch pipe, a second branch pipe, and a third branch pipe; wherein, the first branch pipe is used to transport trimethyl borate gas, the second branch pipe is used to transport trimethyl phosphate gas, and the third branch pipe is used to transport tetraethyl orthosilicate gas.

[0027] In some embodiments of this application, the gas supply system further includes:

[0028] A second relay is connected between the thermostat and the heating device, wherein the thermostat is configured to send a temperature control signal to the second relay based on the sampled temperature, so that the second relay controls the heating device to heat or stop heating based on the temperature control signal.

[0029] A second aspect of this utility model provides a wafer processing apparatus, which includes:

[0030] At least one reaction chamber for accommodating a wafer, wherein the reaction chamber includes a first reaction chamber; and,

[0031] In any of the above-mentioned gas supply systems, the connecting pipe is connected between the gas storage device and the first reaction chamber.

[0032] According to the gas supply system and wafer processing equipment provided by this utility model, a temperature detection device is set to detect the temperature at a set position of the connecting pipe to obtain the sampling temperature. A control valve is installed on the connecting pipe and configured to switch to a shut-off state when the sampling temperature is outside the target temperature range, so that the gas storage device stops supplying reaction gas to the first reaction chamber. Therefore, when the temperature in the reaction gas delivery pipeline becomes abnormal, the supply of reaction gas will be immediately cut off, preventing the reaction gas from crystallizing in the pipeline. When restarting the chemical vapor deposition equipment (reboot), there is no need to clean the crystals, thereby reducing the maintenance workload during reboot. Attached Figure Description

[0033] The following drawings, which are incorporated herein by reference as part of this invention, are provided for understanding the invention. The drawings illustrate embodiments of the invention and their descriptions, serving to explain the principles of the invention.

[0034] In the attached image:

[0035] Figure 1 A schematic diagram of airflow control of a gas supply system according to a specific embodiment of the present invention is shown;

[0036] Figure 2 A connection diagram of a temperature control system according to a specific embodiment of the present invention is shown;

[0037] Figure 3 A circuit topology diagram of a temperature control system according to a specific embodiment of the present invention is shown.

[0038] Figure label:

[0039] 10-Gas storage device 20-First reaction chamber

[0040] 30-Connecting pipe 31-Branch pipe

[0041] 32-Manifold 41-Heating device

[0042] 42-Temperature detection device 43-Control valve

[0043] 51-Thermostat 52-First Relay

[0044] 53-Alarm device 54-Second relay Detailed Implementation

[0045] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that the present invention can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with the present invention.

[0046] It should be understood that this invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this invention to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0047] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this utility model, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0048] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “under” the other element or feature will be oriented “above” the other element or feature. Therefore, the exemplary terms “below” and “under” can include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0049] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0050] When abnormal conditions such as heating belt malfunction cause abnormal temperature in the heating belt, the chemical vapor deposition process cannot be stopped in time. This results in crystallization in the reaction gas delivery pipeline and on the surface of the spray head, increasing the maintenance workload when restarting the chemical vapor deposition equipment (rebooting).

[0051] Therefore, in view of the aforementioned technical problems, refer to Figure 1 This utility model embodiment proposes a gas supply system for a wafer processing apparatus. The wafer processing apparatus includes at least one reaction chamber for accommodating wafers, and the gas supply system includes:

[0052] Gas storage device 10 for storing reaction gases; and,

[0053] A connecting pipe 30 is connected between the gas storage device 10 and the first reaction chamber 20 in at least one reaction chamber. The connecting pipe 30 is provided with a heating device 41 for heating the reaction gas introduced into the connecting pipe 30, and a temperature detection device 42 for detecting the temperature of a set position of the connecting pipe 30 to obtain the sampling temperature.

[0054] Furthermore, a control valve 43 is provided on the connecting pipe 30. The control valve 43 is configured to switch to the off state when the sampling temperature is outside the target temperature range, so that the gas storage device 10 stops supplying reaction gas to the first reaction chamber 20.

[0055] The above embodiment has the following beneficial effects: By setting a temperature detection device 42 to detect the temperature at a set position of the connecting pipe 30 to obtain the sampling temperature, and by setting a control valve 43 on the connecting pipe 30, the control valve 43 is configured to switch to the off state when the sampling temperature is outside the target temperature range, so that the gas storage device 10 stops supplying reaction gas to the first reaction chamber 20. Therefore, when the temperature in the reaction gas delivery pipeline becomes abnormal, the supply of reaction gas will be immediately cut off, preventing the reaction gas from crystallizing in the pipeline and forming crystals. When restarting the chemical vapor deposition equipment (reboot), there is no need to clean the crystals, thereby reducing the maintenance workload during reboot.

[0056] The specific principle is as follows: When the heating element malfunctions or experiences abnormal conditions, such as temperature fluctuations outside the target temperature range, the chemical vapor deposition (CVD) process cannot be stopped in time. This leads to crystallization in the reaction gas delivery pipeline and on the spray head surface. Before restarting, these crystals must be thoroughly cleaned, increasing maintenance workload, manpower costs, and hindering equipment restart. Furthermore, when the heating element temperature fluctuates, the wafer processing equipment's process does not stop. The newly added heating element function cannot be integrated into the machine's protection signal. The heating element malfunction fails to trigger the wafer processing equipment's action, thus failing to protect the wafer and resulting in abnormal film formation on the wafer surface.

[0057] The related technical measures include: increasing inspections to promptly address alarm signals caused by heating element malfunctions and minimize product impact. Additionally, daily inspections record heating element controller display issues and collect data, but this incurs excessive manpower costs. However, none of these methods can effectively halt the chemical vapor deposition process in a timely manner when heating element failures or other abnormalities occur.

[0058] The manner illustrated in the above embodiments of this application is referred to... Figure 1 A separate connecting pipe 30 is provided for the first reaction chamber 20, and an independent control valve 43 is installed on this connecting pipe 30. When the sampling temperature of the temperature detection device 42 is outside the target temperature range, the control valve 43 immediately switches to the off state, so that the gas storage device 10 stops supplying reaction gas to the first reaction chamber 20. This allows for immediate cutoff of the reaction gas supply in case of abnormal conditions such as heating belt failure, thereby promptly stopping the current wafer processing processes such as, but not limited to, chemical vapor deposition, preventing the reaction gas from crystallizing in the pipeline and thus eliminating the workload of cleaning crystals during rework, thereby reducing the maintenance workload during rework. When abnormal conditions such as temperature fluctuations occur in the connecting pipe 30, the timely cessation of wafer processing processes such as chemical vapor deposition also avoids abnormal film formation on the wafer surface, preventing wafer scrap and thus protecting the wafer product and improving product safety.

[0059] Since the connecting pipe 30 and heating device 41 in this embodiment are only installed on the connecting pipe 30 between the gas storage device 10 and the first reaction chamber 20, when the heating device 41 malfunctions, it only affects the first reaction chamber 20 and not the other reaction chambers, so the other reaction chambers will not experience a temperature drop. The control valve 43 can only control the cessation of the supply of reaction gas to the first reaction chamber 20 without affecting the other reaction chambers from continuing their corresponding processes. This achieves an independent temperature control protection design between different reaction chambers, avoiding interference with the continued execution of corresponding processes in other reaction chambers.

[0060] Below, for reference Figures 1 to 3 The gas supply system of the wafer processing equipment according to an embodiment of the present invention will be described in detail.

[0061] When setting the control valve 43, the control valve 43 can be such as, but not limited to, a solenoid valve or a pneumatic valve. The control valve 43 can receive control signals and automatically open or close based on the control signals, thereby performing automatic control. For example, the control valve 43 can be an MFC pneumatic valve (gas mass flow control valve 43).

[0062] The target temperature range can be set to any preset range. For example, the target temperature range can be 55℃-65℃, that is, the ideal target temperature is 60℃, and the reasonable fluctuation is 5℃. As long as the sampling temperature is within 55℃-65℃, it is considered that the heating temperature of the heating device 41 has not fluctuated abnormally.

[0063] There are several ways to implement the linkage configuration between the control valve 43 and the sampling temperature change. Some of these methods are illustrated below.

[0064] For example, refer to Figure 1 and Figure 2 The gas supply system may further include: a thermostat 51 connected between the heating device 41 and the temperature detection device 42, and a first relay 52 connected between the thermostat 51 and the control valve 43; wherein the thermostat 51 is used to compare the sampled temperature with the target temperature range, and when the comparison result is that the sampled temperature is outside the target temperature range, it sends a first electrical control signal to the first relay 52 so that the first relay 52 controls the control valve 43 to switch to the off state.

[0065] By configuring a temperature controller 51, the temperature controller 51 can send a heating or stopping temperature control signal to the heating device 41 based on the sampled temperature collected by the temperature detection device 42, thereby realizing the temperature control management function of the heating device 41. The temperature controller 51 can compare the sampled temperature with the target temperature range to determine whether the latest acquired sampled temperature is within the target temperature range. When the determination result is that the sampled temperature is outside the target temperature range, a first electrical control signal is sent to the first relay 52 to control the control valve 43 to switch to the off state, so as to link the control valve 43 with the sampled temperature change, realizing the function of immediately stopping the supply of reaction gas to the first reaction chamber 20 when the sampled temperature is abnormal.

[0066] For example, refer to Figure 2 The gas supply system may further include an alarm 53 connected to the temperature controller 51. The temperature controller 51 sends a first electrical control signal to the first relay 52 and simultaneously sends the first electrical control signal to the alarm 53, causing the alarm 53 to issue an alarm signal. By setting the alarm 53, and enabling the temperature controller 51 to simultaneously send the first electrical control signal to both the first relay 52 and the alarm 53, the system can stop supplying reaction gas to the first reaction chamber 20 while simultaneously issuing an alarm signal to alert personnel and facilitate immediate awareness of any abnormalities.

[0067] The alarm 53 can be a buzzer that emits a buzzing sound, or an alarm 53 that emits an alarm light signal. As long as it can emit an alarm signal to alert the staff, it belongs to the alarm 53 of this application embodiment.

[0068] For example, refer to Figure 1 The connecting pipe 30 may include at least two branch pipes 31, each connected to the gas storage device 10. Each branch pipe 31 is equipped with a control valve 43 and is connected to the first reaction chamber 20 via the control valve 43. A first relay 52 is connected between the temperature controller 51 and all the control valves 43, and the first relay 52 is configured to control all the control valves 43 to switch to the closed state after receiving a first electrical control signal, so that all the branch pipes 31 stop supplying reaction gas to the first reaction chamber 20. By connecting all the control valves 43 to the first relay 52, the interlocking function of the first relay 52 can be used to control all the control valves 43 to be in the closed state, thereby simultaneously stopping the supply of reaction gas to the first reaction chamber 20, preventing the formation of crystals in some branch pipes 31 due to abnormal temperature, and improving the protection effect.

[0069] For example, refer to Figure 1 The gas storage device 10 includes at least two gas storage sources, each connected to a branch pipe 31. Different gas storage sources store different types of reaction gases. For example, different branch pipes 31 can be used to transport different types of reaction gases.

[0070] For example, refer to Figure 1 , Figure 2 and Figure 3 The first relay 52 can also be configured to, upon receiving the second electrical control signal from the temperature controller 51, control all control valves 43 to switch to the conducting state, so that all branch pipes 31 supply reaction gas to the first reaction chamber 20. By connecting all control valves 43 to the first relay 52, the interlocking function of the first relay 52 can be utilized to simplify the unified linkage control of the control valves 43 on all branch pipes 31, realizing the function of all branch pipes 31 simultaneously supplying reaction gas to the first reaction chamber 20.

[0071] For example, refer to Figure 1 , Figure 2 and Figure 3The first relay 52 may include: a control port connected to the thermostat 51, and at least two sets of load ports, each set of load ports corresponding to a control valve 43 and electrically connected to the corresponding control valve 43; wherein, after receiving the first electrical control signal, all load ports are in the first state to control all control valves 43 to switch to the off state; after receiving the second electrical control signal sent by the thermostat 51, all load ports are in the second state to control all control valves 43 to switch to the on state.

[0072] Specifically, the first state corresponds to the control valve 43 being in the off state, and the second state corresponds to the control valve 43 being in the on state. After the first relay 52 receives the first electrical control signal from the thermostat 51, it controls all load ports to be in the first state, thereby controlling all control valves 43 to switch to the off state. After the first relay 52 receives the second electrical control signal from the thermostat 51, it controls all load ports to be in the second state, thereby controlling all control valves 43 to switch to the on state. That is, all load ports are interlocked, which can include either all being in the first state or all being in the second state. Thus, through the interlocking function of the first relay 52, unified linkage control of all control valves 43 on the branch pipes 31 is simplified.

[0073] For example, refer to Figure 1 The connecting pipe 30 may further include a manifold 32 connecting the first reaction chamber 20 and all the branch pipes 31, meaning that the reaction gases in all the branch pipes 31 first flow into the manifold 32 for mixing, and then flow into the first reaction chamber 20. At this time, the heating device 41 may include a heating strip disposed on the manifold 32, used to heat the reaction gases flowing into the manifold 32. A temperature detection device 42 may be disposed on the manifold 32 to detect the temperature at a set position of the manifold 32 to obtain a sampling temperature. Thus, the temperature control protection method shown in this embodiment can be applied to scenarios where the reaction gases are mixed before flowing into the first reaction chamber 20.

[0074] For example, refer to Figure 2 and Figure 3 The gas supply system may also include a second relay 54 connected between the thermostat 51 and the heating device 41, wherein the thermostat 51 is configured to send a temperature control signal to the second relay 54 based on the sampled temperature, so that the second relay 54 controls the heating device 41 to heat or stop heating based on the temperature control signal.

[0075] Specifically, the temperature controller 51 can determine whether to send a third electrical control signal to the second relay 54 based on the magnitude of the sampled temperature and the first set temperature, so that the second relay 54 controls the heating device 41 to heat based on the third electrical control signal. For example, when the temperature controller 51 compares the sampled temperature with the first set temperature, it sends a third electrical control signal to the second relay 54 to control the heating device 41 to heat. For example, when the temperature controller 51 compares the sampled temperature with the second set temperature (which is greater than the first set temperature), it sends a fourth electrical control signal to the second relay 54 to control the heating device 41 to stop heating. This ensures that the sampled temperature is controlled as close as possible to the first and second set temperatures. For example, both the first and second set temperatures can be within the target temperature range, so that the normal temperature fluctuations of the sampled temperature are within the target temperature range.

[0076] For example, the second relay 54 may be of the type such as, but not limited to, a solid-state relay to improve its service life and reliability.

[0077] For example, refer to Figure 3 The thermostat 51 can be powered by AC power, where L represents the live wire and N represents the neutral wire. Pins 1 and 2 of the thermostat 51 are power supply pins, connected to the live and neutral terminals of the power supply, respectively. Pin 5 of the thermostat 51 is connected solely to the live terminal to provide power to the first relay 52 and the alarm 53. Pins 7 and 8 of the thermostat 51 are used to electrically connect to the temperature detection device 42 to receive the sampled temperature. After receiving the sampled temperature, the thermostat 51 compares the sampled temperature with the target temperature range using its internal comparator circuit to obtain a comparison result. This comparison result is then sent to the first relay 52 and the alarm 53 via pin 6.

[0078] refer to Figure 3Pin 1 of the first relay 52 is electrically connected to pin 6 of the thermostat 51 to receive the first and second electrical control signals from the thermostat 51. Pin 2 of the first relay 52 is electrically connected to the neutral terminal to form a circuit. That is, pins 1 and 2 of the first relay 52 form a control port connected to the thermostat 51. Pins 3 and 4 of the first relay 52 form a set of load ports, connected to the first control valve (V1) of the control valve 43. Pins 5 and 6 of the first relay 52 form a set of load ports, connected to the second control valve (V2) of the control valve 43. Pins 7 and 8 of the first relay 52 form a set of load ports, connected to the third control valve (V3) of the control valve 43. After receiving the first electrical control signal at pin 1 of the first relay 52, it triggers the three sets of load ports to output the same type of signal (output first state), controlling all three control valves 43 to switch to the off state. After receiving the second electrical control signal at pin 1 of the first relay 52, the three sets of load ports are triggered to output the same type of output (output second state) to control the three control valves 43 to switch to the on state.

[0079] refer to Figure 3 The pin represented by '1' in alarm 53 is also electrically connected to the pin represented by '1' in temperature controller 51, thereby receiving the first and second electrical control signals. The pin represented by '2' in alarm 53 is electrically connected to the neutral terminal to form a circuit. An alarm signal is emitted after the pin represented by '1' in alarm 53 receives the first electrical control signal. No alarm signal is emitted when the pin represented by '1' in alarm 53 receives the second electrical control signal or a power-off signal.

[0080] For example, refer to Figure 3 The pin represented by '1' of the second relay 54 is directly connected to the live wire terminal, and the pin represented by '4' of the second relay 54 is directly connected to the neutral wire terminal to form a circuit. The pin represented by '3' of the second relay 54 is connected to the pin represented by '4' of the thermostat 51, and the pin represented by '2' of the second relay 54 is connected to the pin represented by '1' of the heating device 41. The pin represented by '2' of the heating device 41 is connected to the neutral wire terminal to form a circuit. When pins '1' and '2' of the second relay 54 are conducting, power can be directly supplied to the heating device 41 through the live wire terminal, enabling the heating device 41 to heat and support a large load current. When pins '1' and '2' of the second relay 54 are disconnected, the heating device 41 can be controlled to stop heating.

[0081] refer to Figure 3The thermostat 51 can output a third or fourth electrical control signal to the second relay 54 by controlling whether its two pins 3 and 4 are conducting. For example, when pins 3 and 4 of the thermostat 51 are conducting, a third electrical control signal can be output to the second relay 54 through pin 4 to control the heating device 41 to heat. When pins 3 and 4 of the thermostat 51 are de-conducting, a fourth electrical control signal can be output to the second relay 54 through pin 4 to control the heating device 41 to stop heating.

[0082] The type of reaction gas stored in the gas storage device 10 can include various types, specifically related to the wafer processing process of the wafer processing apparatus. Correspondingly, the number of the aforementioned branch pipes 31 is also related to the type of reaction gas required for the first reaction chamber 20. Some embodiments are described below by way of example.

[0083] For example, refer to Figure 1 The reaction gases stored in the gas storage device 10 may include: trimethyl borate gas (TMB, electronic grade trimethyl borate), trimethyl phosphate gas (TMP, electronic grade trimethyl phosphate), and tetraethyl orthosilicate gas (TEOS). At this time, at least two branch pipes 31 include a first branch pipe 31, a second branch pipe 31, and a third branch pipe 31; wherein, the first branch pipe 31 is used to transport trimethyl borate gas, the second branch pipe 31 is used to transport trimethyl phosphate gas, and the third branch pipe 31 is used to transport tetraethyl orthosilicate gas.

[0084] For example, the temperature controller 51 described above can be a system controller in a wafer processing device, such as a board DOS system (disk operating system).

[0085] For example, the temperature controller 51, relay, alarm 53, control valve 43, etc. mentioned above can all be modular functional devices to facilitate maintenance.

[0086] Example 2

[0087] Another embodiment of this utility model also provides a wafer processing device, see reference. Figures 1 to 3 The wafer processing equipment includes:

[0088] At least one reaction chamber for accommodating a wafer, wherein the reaction chamber includes a first reaction chamber 20; and,

[0089] In any of the above-mentioned gas supply systems, the connecting pipe 30 is connected between the gas storage device 10 and the first reaction chamber 20.

[0090] The wafer processing equipment can be, for example, but not limited to, a chemical vapor deposition (CVD) device used for processes such as deposition on wafers using reactive gases. For instance, the CVD device can be, for example, but not limited to, the CVDP5000 model.

[0091] This utility model has been described through the above embodiments. However, it should be understood that the above embodiments are for illustrative purposes only and are not intended to limit the utility model to the described embodiments. Furthermore, those skilled in the art will understand that this utility model is not limited to the above embodiments, and many more variations and modifications can be made based on the teachings of this utility model, all of which fall within the scope of protection claimed by this utility model. The scope of protection of this utility model is defined by the appended claims and their equivalents.

Claims

1. A gas supply system for a wafer processing apparatus, the wafer processing apparatus comprising at least one reaction chamber for accommodating a wafer, characterized in that, The gas supply system includes: Gas storage device for storing reaction gases; and, A connecting pipe is provided between the gas storage device and at least one first reaction chamber in the reaction chamber, wherein the connecting pipe is provided with a heating device for heating the reaction gas introduced into the connecting pipe, and a temperature detection device for detecting the temperature at a set position of the connecting pipe to obtain the sampling temperature; Furthermore, a control valve is provided on the connecting pipe. The control valve is configured to switch to the off state when the sampling temperature is outside the target temperature range, so that the gas storage device stops supplying the reaction gas to the first reaction chamber.

2. The gas supply system as described in claim 1, characterized in that, Also includes: A thermostat connected between the heating device and the temperature detection device; as well as, A first relay connected between the thermostat and the control valve; The temperature controller is used to compare the sampled temperature with the target temperature range, and when the comparison result shows that the sampled temperature is outside the target temperature range, it sends a first electrical control signal to the first relay so that the first relay controls the control valve to switch to the off state.

3. The gas supply system as described in claim 2, characterized in that, Also includes: An alarm connected to the thermostat, wherein the thermostat sends the first electrical control signal to the first relay at the same time as sending the first electrical control signal to the alarm, so that the alarm emits an alarm signal.

4. The gas supply system as described in claim 2, characterized in that, The connecting pipe includes at least two branch pipes that are both connected to the gas storage device, and each branch pipe is provided with the control valve and is connected to the first reaction chamber through the control valve. The first relay is connected between the temperature controller and all the control valves, and the first relay is configured to: after receiving the first electrical control signal, control all the control valves to switch to the off state, so that all the branch pipes stop supplying the reaction gas to the first reaction chamber.

5. The gas supply system as described in claim 4, characterized in that, The first relay is also configured to, upon receiving a second electrical control signal from the temperature controller, control all the control valves to switch to the on state so that all the branch pipes supply the reaction gas to the first reaction chamber.

6. The gas supply system as described in claim 4 or 5, characterized in that, The first relay includes: The control port connected to the thermostat; and, At least two sets of load ports, each set of load ports corresponding to one of the control valves and electrically connected to the corresponding control valve; Wherein, after receiving the first electrical control signal, all the load ports are in the first state, so as to control all the control valves to switch to the off state. After receiving the second electrical control signal sent by the temperature controller, all the load ports of the control port are in the second state to control all the control valves to switch to the on state.

7. The gas supply system as described in claim 4, characterized in that, The connecting pipe further includes: a manifold connecting the first reaction chamber and all of the branch pipes; The heating device includes a heating belt disposed on the manifold, the heating belt being used to heat the reaction gas introduced into the manifold; The temperature detection device is used to detect the temperature at the set position of the manifold to obtain the sampling temperature.

8. The gas supply system as described in claim 4, characterized in that, The at least two branch pipes include a first branch pipe, a second branch pipe, and a third branch pipe; wherein the first branch pipe is used to transport trimethyl borate gas, the second branch pipe is used to transport trimethyl phosphate gas, and the third branch pipe is used to transport tetraethyl orthosilicate gas.

9. The gas supply system as described in claim 2, characterized in that, Also includes: A second relay is connected between the thermostat and the heating device, wherein the thermostat is configured to send a temperature control signal to the second relay based on the sampled temperature, so that the second relay controls the heating device to heat or stop heating based on the temperature control signal.

10. A wafer processing apparatus, characterized in that, include: At least one reaction chamber for accommodating a wafer, wherein the reaction chamber includes a first reaction chamber; and, The gas supply system according to any one of claims 1 to 9, wherein the connecting pipe is connected between the gas storage device and the first reaction chamber.

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