Plasma enhanced chemical vapor deposition equipment and gas uniformizing disc thereof

Abstract

The utility model discloses plasma enhanced chemical vapor deposition equipment and a gas uniformizing disc thereof, the gas uniformizing disc comprises a gas uniformizing disc body, a plurality of gas holes are uniformly distributed on the gas uniformizing disc body, the gas uniformizing disc body is used for sequentially dividing into a plurality of areas which are distributed in a concentric circle from the center to the outside according to a wafer deposition film thickness distribution diagram, the gas uniformizing disc body is used for being in one-to-one correspondence with a plurality of parts of a wafer deposition film thickness distribution diagram, and the key size of the gas hole in each area of the gas uniformizing disc body and the thickness of the corresponding part of the wafer deposition film thickness distribution diagram have a preset relation; the larger the thickness of the corresponding part of the wafer deposition film thickness distribution diagram is, the smaller the pore diameter of the pores in the corresponding area of the gas uniformizing disc body is or the longer the pore length is; the smaller the thickness of the corresponding part of the wafer deposition film thickness distribution diagram is, the larger the pore diameter of the pores in the corresponding area of the gas uniformizing disc body is or the shorter the pore length is, the gas uniformizing disc is used for adjusting the gas diffusion amount of each area of the surface of the wafer, and the uniformity of the film on the wafer can be optimized.

Description

TECHNICAL FIELD

[0001] The utility model relates to integrated circuit manufacturing technical field, especially a kind of plasma enhanced chemical vapor deposition equipment and its gas distribution plate. BACKGROUND

[0002] Plasma enhanced chemical vapor deposition equipment (PECVD machine) is the equipment of key link in integrated circuit manufacturing process, can deposit dielectric thin film, etch hard mask, capacitor dielectric, low dielectric constant etc.

[0003] The uniformity of conventional PECVD process thin film is generally less than 3.0%, generally between 1.5%~3.0%, PECVD film thickness is concentric distribution, and this process performance is mainly related to PECVD chamber design, such as: circular distribution hot table, circular distribution gas distribution plate.For the device with higher requirement for thin film uniformity, such as micro-electromechanical systems (Micro-electromechanical Systems, simply referred to as MEMS), silicon oxide in wafer requires thin film uniformity less than 0.7%, 0.7% uniformity has great challenge to conventional PECVD machine, mainly in process window is relatively narrow and it is difficult to maintain process long-term stability in production process. SUMMARY

[0004] Therefore, the utility model provides a gas distribution plate, which can help to optimize the uniformity of wafer surface thin film thickness.

[0005] To achieve the above purpose, the utility model provides the following technical scheme:

[0006] A gas distribution plate is applied to plasma enhanced chemical vapor deposition equipment, comprising a gas distribution plate body, the gas distribution plate body is uniformly distributed with a plurality of gas holes, the gas distribution plate body is used to divide into a plurality of regions from center to outside according to wafer deposition thin film thickness distribution map, the plurality of regions of the gas distribution plate body is concentrically distributed, and is used to correspond to the plurality of parts of the wafer deposition thin film thickness distribution map one by one, the critical dimension of the gas hole of each region of the gas distribution plate body has preset relationship with the thickness of the corresponding part of the wafer deposition thin film thickness distribution map;

[0007] The greater the thickness of the corresponding part of the wafer deposition film thickness distribution map, the smaller the pore diameter or the longer the pore length of the gas hole of the corresponding region of the gas distribution plate body; the smaller the thickness of the corresponding part of the wafer deposition film thickness distribution map, the greater the pore diameter or the shorter the pore length of the gas hole of the corresponding region of the gas distribution plate body.

[0008] Preferably, the plurality of regions of the gas distribution plate body at least includes: a first region, a second region and a third region;

[0009] The first region, the second region and the third region of the gas distribution plate body are distributed in a concentric circle from the center of the gas distribution plate body outward.

[0010] Preferably, the first region is a circular region with the center of the gas distribution plate body as the center and a diameter of 60mm;

[0011] The second region is a first annular region with the center of the gas distribution plate body as the center and a diameter of 60-120mm;

[0012] The third region is a second annular region with the center of the gas distribution plate body as the center and a diameter of 120-248mm.

[0013] Preferably, the pore diameter of the gas hole of the first region of the gas distribution plate body is 0.2-2.0mm, and the pore length is 1-10mm;

[0014] The pore diameter of the gas hole of the second region of the gas distribution plate body is 0.2-2.0mm, and the pore length is 1-10mm;

[0015] The pore diameter of the gas hole of the third region of the gas distribution plate body is 0.2-2.0mm, and the pore length is 1-10mm.

[0016] Preferably, the wafer deposition film thickness distribution Figure One The greater the thickness of the three parts corresponding to the first region, the second region and the third region of the gas distribution plate body, the smaller the pore diameter or the longer the pore length of the gas hole of the first region, the second region and the third region of the gas distribution plate body.

[0017] Preferably, the pore of each gas hole of the gas distribution plate body serves as an air outlet section of the gas hole, and the air inlet section of the gas hole includes an equal-diameter section and a tapered section connected in sequence;

[0018] The pore length of the gas hole of the first region of the gas distribution plate body is 2.2-2.4mm;

[0019] The pore length of the gas hole of the second region of the gas distribution plate body is 2.5-2.7mm;

[0020] The length of the orifice of the gas hole in the third region of the gas distribution plate body is 2.9-3.1mm.

[0021] Preferably, the orifice of each gas hole of the gas distribution plate body is distributed between the inlet section and the outlet section of the gas hole, and the inlet section and the outlet section of the gas hole are both tapered sections;

[0022] The length of the orifice of the gas hole in the first region of the gas distribution plate body is 2.4-2.6mm;

[0023] The length of the orifice of the gas hole in the second region of the gas distribution plate body is 2.7-2.9mm;

[0024] The length of the orifice of the gas hole in the third region of the gas distribution plate body is 3.1-3.3mm.

[0025] Preferably, the orifice of each gas hole of the gas distribution plate body is the outlet section of the gas hole, and the inlet section of the gas hole is a tapered section;

[0026] The length of the orifice of the gas hole in the first region of the gas distribution plate body is 2.2-2.4mm;

[0027] The length of the orifice of the gas hole in the second region of the gas distribution plate body is 2.5-2.7mm;

[0028] The length of the orifice of the gas hole in the third region of the gas distribution plate body is 2.9-3.1mm.

[0029] A plasma enhanced chemical vapor deposition device, comprising a gas distribution plate, the gas distribution plate being as described above.

[0030] From the above technical scheme can be seen, the utility model provides a gas distribution plate, the gas distribution plate body is divided into corresponding multiple areas from the center to the outside according to wafer deposition film thickness distribution diagram, then the key size of the gas hole of the corresponding area of the gas distribution plate body is adjusted according to the thickness of the corresponding part of wafer deposition film thickness distribution diagram;Wherein, when the thickness of the corresponding part of wafer deposition film thickness distribution diagram is greater, the fine hole diameter of the gas hole of the corresponding area of the gas distribution plate body is smaller or the fine hole length is longer, at this time, the gas diffusion amount of the gas hole of the corresponding area of the gas distribution plate body to the corresponding area of wafer surface is less, can make the thickness of the deposition film of the corresponding area of wafer surface be less;When the thickness of the corresponding part of wafer deposition film thickness distribution diagram is smaller, the fine hole diameter of the gas hole of the corresponding area of the gas distribution plate body is greater or the fine hole length is shorter, at this time, the gas diffusion amount of the gas hole of the corresponding area of the gas distribution plate body to the corresponding area of wafer surface is more, can make the thickness of the deposition film of the corresponding area of wafer surface be greater, in this way, the existing deposition thicker film of the corresponding area of wafer surface can become deposition thinner film, and the existing deposition thinner film of the corresponding area of wafer surface can become deposition thicker film, thereby helping to optimize the uniformity of wafer deposition film thickness, that is, the deposition film of wafer can obtain better uniformity, and the optimization of wafer surface film thickness uniformity can be realized by improving the gas distribution plate of plasma enhanced chemical vapor deposition equipment. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical scheme in the embodiments of the utility model or the prior art, the drawings needed to be used in the following embodiment or prior art description will be briefly introduced, and obviously, the drawings in the following description are only some embodiments of the utility model, and other drawings can be obtained by those skilled in the art without creative labor.

[0032] Figure 1 The gas hole distribution schematic view of the first gas distribution plate provided by the embodiments of the utility model is shown in the figure.

[0033] Figure 2 The cross-sectional schematic view of the gas hole of the first gas distribution plate provided by the embodiments of the utility model is shown in the figure.

[0034] Figure 3 The gas hole distribution schematic view of the second gas distribution plate provided by the embodiments of the utility model is shown in the figure.

[0035] Figure 4 The cross-sectional schematic view of the gas hole of the second gas distribution plate provided by the embodiments of the utility model is shown in the figure.

[0036] Figure 5 The gas hole distribution schematic view of the third gas distribution plate provided by the embodiments of the utility model is shown in the figure.

[0037] Figure 6 A cross section schematic view of the gas holes of the third gas distribution plate is provided for the embodiment of the utility model;

[0038] Figure 7 A wafer deposition film thickness distribution diagram corresponding to the existing first gas distribution plate;

[0039] Figure 8 A wafer deposition film thickness distribution diagram corresponding to the first gas distribution plate is provided for the embodiment of the utility model;

[0040] Figure 9 A wafer deposition film thickness distribution diagram corresponding to the existing second gas distribution plate;

[0041] Figure 10 A wafer deposition film thickness distribution diagram corresponding to the second gas distribution plate is provided for the embodiment of the utility model;

[0042] Figure 11 A wafer deposition film thickness distribution diagram corresponding to the existing third gas distribution plate;

[0043] Figure 12 A wafer deposition film thickness distribution diagram corresponding to the third gas distribution plate is provided for the embodiment of the utility model.

[0044] Wherein, 1 is the gas distribution plate body, 11 is the gas hole, 12 is the fine hole;

[0045] Ⅰ is the first area, Ⅱ is the second area, and Ⅲ is the third area. DETAILED DESCRIPTION

[0046] In the above background art, in order to obtain better uniformity of wafer film thickness, improvement in process parameters will face the problem of narrow process window and long-term process stability; in other words, for very low film uniformity process, it is difficult to optimize the process parameters, which requires optimizing the hardware (such as the gas distribution plate) of the plasma enhanced chemical vapor deposition equipment (PECVD machine) to achieve the above purpose; wherein the main parameters affecting the film uniformity of the PECVD chamber are: thermal uniformity of the hot table, process gas uniformity; the hot table generally selects a ceramic hot table or a metal hot table, and the thermal uniformity of the hot table can reach less than 1.0%; according to the actual process, the optimization contribution of the hot table uniformity to the film uniformity is relatively low, the distribution of process gas on the wafer surface directly affects the uniformity of the film, and the wafer surface gas distribution is mainly affected by the cavity structure, the gas inlet end gas distribution structure and the exhaust structure; therefore, the wafer surface gas distribution can be adjusted by improving the gas inlet end gas distribution structure (such as the gas distribution plate) to obtain better film uniformity performance.

[0047] Clearly and completely describe the technical scheme in the embodiments of the utility model with reference to the drawings in the embodiments of the utility model, obviously, the described embodiments are only a part of the embodiments of the utility model, not all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the ordinary skilled in the art without making creative labor belong to the range of protection of the utility model.

[0048] The uniform gas disc provided by the embodiments of the utility model is applied to a plasma enhanced chemical vapor deposition device, such as Figure 1 、 Figure 3 or Figure 5 , and includes a uniform gas disc body 1, the uniform gas disc body 1 is uniformly distributed with a plurality of gas holes 11, the uniform gas disc body 1 is used for being divided into a plurality of regions in sequence from the center to the outside according to a wafer deposition film thickness distribution diagram, the plurality of regions of the uniform gas disc body 1 are distributed in concentric circles, and are used for one-to-one correspondence with a plurality of parts of the wafer deposition film thickness distribution diagram, the critical dimension of the gas hole 11 of each region of the uniform gas disc body 1 has a preset relationship with the thickness of the corresponding part of the wafer deposition film thickness distribution diagram.

[0049] Among them, the greater the thickness of the corresponding part of the wafer deposition film thickness distribution diagram, the smaller the pore diameter or the longer the pore length of the gas hole 11 of the corresponding region of the uniform gas disc body 1; the smaller the thickness of the corresponding part of the wafer deposition film thickness distribution diagram, the greater the pore diameter or the shorter the pore length of the gas hole 11 of the corresponding region of the uniform gas disc body 1.

[0050] It should be noted that, in order to realize the uniform distribution of the gas on the wafer surface, as shown in Figure 1 、 Figure 3 or Figure 5 , the uniform gas disc body 1 is uniformly distributed with a plurality of through gas holes 11; wherein the uniform gas disc body 1 can be a circular uniform gas disc body, each gas hole 11 can be a circular through hole, and includes an air inlet section and an air outlet section; the uniform gas disc body 1 is used for being divided into a plurality of regions in sequence from the center to the outside according to the wafer deposition film thickness distribution diagram (as shown in Figure 7 、 Figure 9 or Figure 11 , and the wafer deposition film thickness is in the form of concentric circle distribution), the plurality of regions of the uniform gas disc body 1 (which can be located at the air outlet end surface of the uniform gas disc body 1) are distributed in concentric circles, and are used for one-to-one correspondence with a plurality of parts (such as a plurality of concentric circle parts) of the wafer deposition film thickness distribution diagram; for example, as shown in Figure 11 , the wafer deposition film thickness distribution diagram has three concentric circle parts, the uniform gas disc body 1 can be divided into three regions distributed in concentric circles in sequence from the center to the outside according to the wafer deposition film thickness distribution diagram, as shown in Figure 5The first region I, the second region II and the third region III are used for corresponding to the three concentric circle parts of the wafer deposition film thickness distribution map respectively.

[0051] As shown in Figure 1 , Figure 3 or Figure 5 , the plurality of gas holes 11 are distributed in each region of the gas distribution plate body 1 (which can be uniform distribution), that is, the plurality of gas holes 11 are divided into multiple parts by the multiple regions of the gas distribution plate body 1, and the key size of the gas hole 11 (each gas hole 11) in each region of the gas distribution plate body 1 has a preset relationship with the thickness of the corresponding part of the wafer deposition film thickness distribution map.

[0052] When the thickness of the corresponding part of the wafer deposition film thickness distribution map is greater, the pore diameter of the gas hole 11 (each gas hole 11) in the corresponding region of the gas distribution plate body 1 is smaller or the pore length is longer, at this time, the gas diffusion amount reaching the corresponding region of the wafer surface through the gas hole 11 of the gas distribution plate body 1 in this region is less, that is, the gas flow reaching the corresponding region of the wafer surface through the gas hole 11 of the gas distribution plate body 1 in this region is less, which can make the thickness of the deposition film in the corresponding region of the wafer surface is smaller, that is, the thickness of the deposition film in the corresponding region of the wafer surface is thinner than before.

[0053] When the thickness of the corresponding part of the wafer deposition film thickness distribution map is smaller, the pore diameter of the gas hole 11 in the corresponding region of the gas distribution plate body 1 is larger or the pore length is shorter, at this time, the gas diffusion amount reaching the corresponding region of the wafer surface through the gas hole 11 of the gas distribution plate body 1 in this region is more, that is, the gas flow reaching the corresponding region of the wafer surface through the gas hole 11 of the gas distribution plate body 1 in this region is more, which can make the thickness of the deposition film in the corresponding region of the wafer surface is larger, that is, the thickness of the deposition film in the corresponding region of the wafer surface is thicker than before, in this way, the existing deposition of a relatively thick film in the corresponding region of the wafer surface can become a relatively thin film, and the existing deposition of a relatively thin film in the corresponding region of the wafer surface can become a relatively thick film, thereby helping to optimize the uniformity of the wafer deposition film thickness, that is, the wafer deposition film can obtain better uniformity.

[0054] Therefore, it can be understood that the pore diameter of the gas hole 11 in each region of the gas distribution plate body 1 has an inverse relationship with the thickness of the corresponding part of the wafer deposition film thickness distribution map, or the pore length of the gas hole 11 in each region of the gas distribution plate body 1 has a positive relationship with the thickness of the corresponding part of the wafer deposition film thickness distribution map; of course, the pore diameter and the pore length of the gas hole 11 in the corresponding region of the gas distribution plate body 1 can be adjusted at the same time.

[0055] For example, as shown in Figure 9As shown, the wafer deposition film thickness distribution map is generally divided into three parts from the center to the outside, and the thickness of the deposition film in the three parts is getting larger and larger; accordingly, as shown Figure 3 As shown, the gas distribution plate body 1 can be divided into a first region I, a second region II and a third region III from the center to the outside; in order to make the wafer deposition film have optimal uniformity, that is, to make the thickness of each part of the wafer deposition film close to each other, the pore diameter of the gas hole 21 in the first region I, the second region II and the third region III of the gas distribution plate body 1 needs to be designed to be smaller and smaller, or the pore length needs to be designed to be longer and longer;

[0056] It should be noted that the critical dimension of the gas hole 11 is the pore diameter or the pore length of the gas hole 11, and it is not difficult to understand that the larger the pore diameter of the gas hole 11, the larger the amount of gas diffusion or gas flow reaching the wafer surface through the gas hole 11 of the gas distribution plate body 1, and the larger the thickness of the deposition film on the wafer surface; on the contrary, the smaller the pore diameter of the gas hole 11, the smaller the amount of gas diffusion or gas flow reaching the wafer surface through the gas hole 11 of the gas distribution plate body 1, and the smaller the thickness of the deposition film on the wafer surface; in addition, the shorter the pore length of the gas hole 11, the larger the amount of gas diffusion or gas flow reaching the wafer surface through the gas hole 11 of the gas distribution plate body 1, and the larger the thickness of the deposition film on the wafer surface; on the contrary, the longer the pore length of the gas hole 11, the smaller the amount of gas diffusion or gas flow reaching the wafer surface through the gas hole 11 of the gas distribution plate body 1, and the smaller the thickness of the deposition film on the wafer surface;

[0057] That is, in order to optimize the uniformity of the wafer surface film thickness, the distribution of the process gas on the wafer surface needs to be optimized; for this purpose, the present scheme adopts the technical means of improving the critical dimension of the gas hole in different regions of the PECVD machine table gas distribution structure (i.e. gas distribution plate) according to the wafer deposition film thickness distribution map, which actually realizes the optimization of the uniformity of the wafer surface film thickness by optimizing the hardware of the PECVD machine table (i.e. gas distribution plate), that is, the present scheme provides a gas distribution plate structure for improving the uniformity of PECVD deposition film;

[0058] The gas distribution plate body 1 is divided into corresponding multiple regions from the center to the outside according to the wafer deposited film thickness distribution map, and then the key size of the gas hole 11 of the corresponding region of the gas distribution plate body 1 is adjusted according to the thickness of the corresponding part of the wafer deposited film thickness distribution map; wherein, when the thickness of the corresponding part of the wafer deposited film thickness distribution map is greater, the pore diameter of the gas hole 11 of the corresponding region of the gas distribution plate body 1 is smaller or the pore length is longer, at this time, the gas diffusion amount of the gas hole 11 of the corresponding region of the gas distribution plate body 1 to the corresponding region of the wafer surface is less, so that the thickness of the deposited film of the corresponding region of the wafer surface is smaller; when the thickness of the corresponding part of the wafer deposited film thickness distribution map is smaller, the pore diameter of the gas hole of the corresponding region of the gas distribution plate body 1 is larger or the pore length is shorter, at this time, the gas diffusion amount of the gas hole 11 of the corresponding region of the gas distribution plate body 1 to the corresponding region of the wafer surface is larger, so that the thickness of the deposited film of the corresponding region of the wafer surface is larger, in this way, the existing wafer surface corresponding region originally deposited thicker film can become a thinner film, and the existing wafer surface corresponding region originally deposited thinner film can become a thicker film, thereby helping to optimize the uniformity of the wafer deposited film thickness, that is, the wafer deposited film can obtain better uniformity.

[0059] Briefly, the gas distribution plate provided by the utility model adjusts (remanufactures) the key size of the gas hole of the corresponding region of the gas distribution plate body according to the thickness of each part of the wafer deposited film thickness distribution map, is used for adjusting the gas diffusion amount of each region of the wafer surface, thereby helping to optimize the uniformity of the film on the wafer, and finally can reach less than 1.0%; of course, in order to achieve the above purpose, the gas distribution plate body can also be adjusted according to the thickness of each part of the wafer deposited film thickness distribution map, that is, the gas diffusion amount of each region of the wafer surface can be adjusted.

[0060] In the scheme, as shown in Figure 1 、 Figure 3 or Figure 5 , the multiple regions of the gas distribution plate body 1 at least include: a first region I, a second region II and a third region III;

[0061] The first region I, the second region II and the third region III of the gas distribution plate body are distributed in concentric circles from the center of the gas distribution plate body 1 to the outside.

[0062] That is, the gas distribution plate body 1 can be divided into at least three regions from the center to the outside according to the wafer deposited film thickness distribution map, that is, the first region I, the second region II and the third region III; of course, as shown in Figure 7 、 Figure 9 or Figure 11As shown, the wafer deposition film thickness distribution diagram can be divided into three parts accordingly; wherein, the first region I, the second region II and the third region III of the gas distribution plate body 1 are concentric with the center of the gas distribution plate body 1. In addition, although the number of division of the regions of the gas distribution plate body 1 can be determined according to the wafer deposition film thickness distribution diagram, considering the adjustment workload of the key size of the gas holes in different regions of the gas distribution plate body 1, the gas distribution plate body 1 can be divided into at most six regions from the center to the outside according to the wafer deposition film thickness distribution diagram.

[0063] Specifically, as shown in Figure 1 、 Figure 3 or Figure 5 , the first region I is a circular region with the center of the gas distribution plate body 1 as the center and the diameter of 0-60mm; wherein, the first region I can be further subdivided into multiple concentric circular regions;

[0064] The second region II is a first annular region with the center of the gas distribution plate body 1 as the center and the diameter of 60-120mm; wherein, the second region II can be further subdivided into multiple concentric circular regions;

[0065] The third region III is a second annular region with the center of the gas distribution plate body 1 as the center and the diameter of 120-248mm. Wherein, the third region III can be further subdivided into multiple concentric circular regions.

[0066] Wherein, the hole diameter of the gas hole 11 in the first region I of the gas distribution plate body 1 is 0.2mm-2.0mm, and the hole length is 1mm-10mm;

[0067] The hole diameter of the gas hole 11 in the second region II of the gas distribution plate body 1 is 0.2mm-2.0mm, and the hole length is 1mm-10mm;

[0068] The hole diameter of the gas hole 11 in the third region III of the gas distribution plate body 1 is 0.2mm-2.0mm, and the hole length is 1mm-10mm. That is to say, on the basis of ensuring the uniform distribution of process gas on the surface of the wafer, in order to facilitate the adjustment of the gas flow of the gas hole 1 in the corresponding region of the gas distribution plate body 1, the hole diameter of the gas hole 11 in each region of the gas distribution plate body 1 is 0.2mm-2.0mm, and the hole length is 1mm-10mm.

[0069] Further, as shown in Figure 7 、 Figure 9 or Figure 11 , the wafer deposition film thickness distribution Figure OneAs the thickness of the three parts corresponding to the first region I, the second region II, and the third region III of the gas equalization disk body 1 increases, the diameter of the fine holes 11 of the air holes 11 in the first region I, the second region II, and the third region III of the gas equalization disk body 1 decreases or the length of the fine holes increases. In this diagram, the thickness of the wafer-deposited thin film corresponding to the first region I of the gas distribution disk body 1 is less than the thickness of the wafer-deposited thin film corresponding to the second region II of the gas distribution disk body 1, which is less than the thickness of the wafer-deposited thin film corresponding to the third region III of the gas distribution disk body 1. Accordingly, the diameter of the pores 11 in the first region I, the second region II, and the third region III of the gas distribution disk body 1 becomes smaller or the length of the pores becomes longer. That is, the diameter of the pores 1 in the first region I of the gas distribution disk body 1 is greater than the diameter of the pores 1 in the second region II, which is greater than the diameter of the pores 1 in the third region III. This results in a greater amount of gas diffusion to the outer region of the wafer surface through the pores 11 in these three regions of the gas distribution disk body 1, a smaller amount of gas diffusion to the middle region of the wafer surface, and the least amount of gas diffusion to the inner region of the wafer surface. This helps to make the film thickness in each region of the wafer surface more similar, which is beneficial to optimizing the uniformity of the deposited film thickness on the wafer surface. In other words, the thickness of the thin film on the wafer surface is controlled by adjusting the length or diameter of the pores 11 in each region of the gas distribution disk body 1. Of course, the thickness distribution of the deposited thin film on the wafer... Figure One The thickness of the three parts corresponding to the first region I, the second region II, and the third region III of the gas distribution disk body 1 can also be small, large, and small.

[0070] Furthermore, such as Figure 2 As shown, the fine holes 12 of each air hole 11 in the air distribution plate body 1 serve as the air outlet section of the air hole 11, and the air inlet section of the air hole 11 includes a section of equal diameter and a conical section connected in sequence.

[0071] The length of the fine pores 11 in the first region I of the gas distribution plate body 1 is 2.2~2.4mm;

[0072] The length of the fine holes 11 in the second region II of the gas distribution plate body 1 is 2.5~2.7mm;

[0073] The length of the fine pores 11 in the third region III of the gas distribution plate body 1 is 2.9~3.1mm.

[0074] It should be noted that, as Figure 1 and Figure 2 As shown, the above-mentioned gas equalization disk body 1 is the body of the first gas equalization disk, and the structural form of each air hole 11 of the first gas equalization disk can be referred to Figure 2As shown in the figure; the outlet section of the air hole 11 is the fine hole 12, and the inlet section includes a constant diameter section and a tapered section in sequence; wherein the large end of the tapered section communicates with the inner end of the constant diameter section, and the small end communicates with the inner end of the fine hole 12, and the fine hole diameter of the air hole 11 can be represented by d, and the fine hole length can be represented by c, and the fine hole diameter d of the air hole 11 of the first uniform gas disc can be 0.2mm~2.0mm, and the fine hole length c can be 1mm~10mm; and in order to obtain better optimization effect of wafer film thickness uniformity, the fine hole length of the air hole 11 of the first region I of the first uniform gas disc is 2.2~2.4mm; the fine hole length of the air hole 11 of the second region II of the first uniform gas disc is 2.5~2.7mm; the fine hole length of the air hole 11 of the third region III of the first uniform gas disc is 2.9~3.1mm, and the fine hole diameter of the air hole 11 of each region of the first uniform gas disc can be 0.6mm; wherein, as preferred, the fine hole length of the air hole 11 of the first region I of the first uniform gas disc is 2.3mm; the fine hole length of the air hole 11 of the second region II of the first uniform gas disc is 2.6mm; the fine hole length of the air hole 11 of the third region III of the first uniform gas disc is 3.0mm; of course, the fine hole length and the fine hole diameter of the air hole 11 of each region of the first uniform gas disc are not limited to the above sizes;

[0075] wherein, Figure 7 is the wafer deposited film thickness distribution diagram corresponding to the case that the key size of the existing first uniform gas disc air hole is consistent, and the wafer film thickness uniformity NU=2.9%, and the thickness performance of each part of the wafer deposited film thickness distribution diagram can refer to Figure 7 as shown in the figure; Figure 8 is the wafer deposited film thickness distribution diagram corresponding to the case that the fine hole length of the air hole 11 of each region of the above first uniform gas disc is adjusted, and the wafer film thickness uniformity NU=0.59%, which is lower than that of the original wafer, and the thickness performance of each part of the wafer deposited film thickness distribution diagram can refer to Figure 8 as shown in the figure.

[0076] In this scheme, as Figure 4 shown, the fine hole 12 of each air hole 11 of the uniform gas disc body 1 is distributed between the inlet section and the outlet section of the air hole 11, and the inlet section and the outlet section of the air hole 11 are both tapered sections;

[0077] The fine hole length of the air hole 11 of the first region I of the uniform gas disc body 1 is 2.4~2.6mm;

[0078] The fine hole length of the air hole 11 of the second region II of the uniform gas disc body 1 is 2.7~2.9mm;

[0079] The fine hole length of the air hole 11 of the third region III of the uniform gas disc body 1 is 3.1~3.3mm.

[0080] It should be noted that, asFigure 3 and Figure 4 As shown in FIG. 1, the body 1 of the above-mentioned gas distribution plate is the body of the second gas distribution plate, and the structure of each gas hole 11 of the second gas distribution plate can refer to FIG. 2 for example. Figure 4 As shown in FIG. 2, the fine holes 12 are distributed between the gas inlet section and the gas outlet section of the gas hole 11, and both the gas inlet section and the gas outlet section of the gas hole 11 are tapered sections; wherein the outer end of the gas inlet section is the large end, the inner end is the small end and communicates with one end of the fine hole 12, the inner end of the gas outlet section is the small end and communicates with the other end of the fine hole 12, and the outer end is the large end, and the fine hole diameter of the gas hole 11 can be represented by n, and the fine hole length can be represented by l, and the fine hole diameter n of the gas hole 11 of the second gas distribution plate can be 0.2mm~2.0mm, and the fine hole length l can be 1mm~10mm; and in order to obtain better optimization effect of wafer film thickness uniformity, the fine hole length of the gas hole 11 of the first region I of the second gas distribution plate is 2.4~2.6mm; the fine hole length of the gas hole 11 of the second region II of the second gas distribution plate is 2.7~2.9mm; the fine hole length of the gas hole 11 of the third region III of the second gas distribution plate is 3.1~3.3mm, and the fine hole diameter of the gas hole 11 of each region of the second gas distribution plate can be 0.4mm; wherein, as a preferred, the fine hole length of the gas hole 11 of the first region I of the second gas distribution plate is 2.5mm; the fine hole length of the gas hole 11 of the second region II of the second gas distribution plate is 2.8mm; the fine hole length of the gas hole 11 of the third region III of the second gas distribution plate is 3.2mm; of course, the fine hole length and the fine hole diameter of the gas hole 11 of each region of the second gas distribution plate are not limited to the above-mentioned sizes;

[0081] wherein, Figure 9 is the corresponding wafer deposition film thickness distribution diagram when the key size of the existing second gas distribution plate gas hole is consistent, and the wafer film thickness uniformity NU=2.75%, and the thickness performance of each part of the wafer deposition film thickness distribution diagram can refer to FIG. 3 for example; Figure 9 Figure 10 is the corresponding wafer deposition film thickness distribution diagram after adjusting the fine hole length of the gas hole 11 of each region of the above-mentioned second gas distribution plate, and the wafer film thickness uniformity NU=0.56%, which is lower than the original wafer film thickness uniformity, and the thickness performance of each part of the wafer deposition film thickness distribution diagram can refer to FIG. 4 for example. Figure 10

[0082] Specifically, as shown in FIG. 1, the fine hole 12 of each gas hole 11 of the gas distribution plate body 1 is the gas outlet section of the gas hole 11, and the gas inlet section of the gas hole 11 is a tapered section; Figure 6

[0083] The fine hole length of the gas hole 11 of the first region I of the gas distribution plate body 1 is 2.2~2.4mm;

[0084] ​​​The hole length of the gas hole 11 of the second area II of the uniform gas disc body 1 is 2.5-2.7mm;

[0085] The hole length of the gas hole 11 of the third area III of the uniform gas disc body 1 is 2.9-3.1mm.

[0086] It should be noted that, as shown in Figure 5 and Figure 6 The uniform gas disc body 1 is the body of the third uniform gas disc, and the structure of each gas hole 11 of the third uniform gas disc can refer to Figure 6 The hole 12 is the gas outlet section of the gas hole 11, and the gas inlet section of the gas hole 11 is a tapered section. The outer end of the gas inlet section of the gas hole 11 is a large end, and the inner end is a small end and communicates with one end of the hole 12. The hole diameter of the gas hole 11 can be represented by h, and the hole length can be represented by g. The hole diameter h of the gas hole 11 of the third uniform gas disc can be 0.2-2.0mm, and the hole length g can be 1-10mm. In order to obtain better optimization effect of the uniformity of the wafer film thickness, the hole length of the gas hole 11 of the first area I of the third uniform gas disc is 2.2-2.4mm, the hole length of the gas hole 11 of the second area II is 2.5-2.7mm, and the hole length of the gas hole 11 of the third area III is 2.9-3.1mm. The hole diameter of the gas hole 11 of each area of the third uniform gas disc can be 0.6mm. As a preferred, the hole length of the gas hole 11 of the first area I of the third uniform gas disc is 2.3mm, the hole length of the gas hole 11 of the second area II is 2.6mm, and the hole length of the gas hole 11 of the third area III is 3.0mm. Of course, the hole length and hole diameter of the gas hole 11 of each area of the third uniform gas disc are not limited to the above sizes.

[0087] Among them, Figure 11 is the wafer deposition film thickness distribution diagram corresponding to the case that the key sizes of the gas holes of the existing third uniform gas disc are consistent, and the uniformity of the film thickness on the wafer NU=2.8%. The thickness performance of each part of the wafer deposition film thickness distribution diagram can refer to Figure 11 . Figure 12 is the wafer deposition film thickness distribution diagram corresponding to the case that the hole length of the gas hole 11 of each area of the third uniform gas disc is adjusted, and the uniformity of the film thickness on the wafer NU=0.59%, which is lower than that of the original wafer. The thickness performance of each part of the wafer deposition film thickness distribution diagram can refer to Figure 12 .

[0088] That is, the plasma enhanced chemical vapor deposition equipment has the above three kinds of uniform gas discs, which can be used according to different processes.

[0089] The utility model embodiment further provides a kind of plasma enhanced chemical vapor deposition equipment, including uniform gas disc, the uniform gas disc is as above-mentioned uniform gas disc.Due to the uniform gas disc of above-mentioned in this scheme, it also has corresponding beneficial effect, specifically can refer to the foregoing description, here no longer repeat.

[0090] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments.

[0091] The above description of the disclosed embodiments enables those skilled in the art to implement or use the utility model. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the utility model. Therefore, the utility model will not be limited to these embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas-uniforming disk, used in a plasma-enhanced chemical vapor deposition (PECVD) apparatus, comprising a gas-uniforming disk body (1), wherein the gas-uniforming disk body (1) has a plurality of gas holes (11) uniformly distributed thereon, characterized in that, The gas equalization disk body (1) is used to divide the wafer deposition film thickness distribution map into multiple regions from the center outward. The multiple regions of the gas equalization disk body (1) are distributed in concentric circles and correspond one-to-one with multiple parts of the wafer deposition film thickness distribution map. The key dimensions of the pores (11) in each region of the gas equalization disk body (1) have a preset relationship with the thickness of the corresponding part of the wafer deposition film thickness distribution map. The greater the thickness of the portion corresponding to the wafer deposition film thickness distribution map, the smaller the diameter or the longer the length of the pores (11) in the corresponding region of the gas equalization disk body (1); the smaller the thickness of the portion corresponding to the wafer deposition film thickness distribution map, the larger the diameter or the shorter the length of the pores (11) in the corresponding region of the gas equalization disk body (1). The multiple regions of the gas equalization disk body (1) include at least: a first region (Ⅰ), a second region (Ⅱ) and a third region (Ⅲ); The first region (Ⅰ), the second region (Ⅱ), and the third region (Ⅲ) of the gas equalization disk body are distributed in concentric circles from the center of the gas equalization disk body (1).

2. The gas distribution plate according to claim 1, characterized in that, The first region (Ⅰ) is a circular region with the center of the gas equalization disk body (1) as the center and a diameter of 60mm; The second region (Ⅱ) is a first annular region with the center of the gas distribution disc body (1) as the center and a diameter of 60~120mm; The third region (Ⅲ) is a second annular region with the center of the gas equalization disk body (1) as the center and a diameter of 120~248mm.

3. The gas distribution disc according to claim 1, characterized in that, The diameter of the fine holes (11) in the first region (Ⅰ) of the gas distribution plate body (1) is 0.2mm~2.0mm, and the length of the fine holes is 1mm~10mm; The diameter of the fine holes (11) in the second region (II) of the gas distribution plate body (1) is 0.2mm~2.0mm, and the length of the fine holes is 1mm~10mm. The diameter of the fine holes (11) in the third region (Ⅲ) of the gas distribution plate body (1) is 0.2mm~2.0mm, and the length of the fine holes is 1mm~10mm.

4. The gas distribution plate according to claim 1, characterized in that, The thickness distribution of the wafer-deposited thin film corresponds to the thickness of the three parts of the first region (Ⅰ), the second region (Ⅱ), and the third region (Ⅲ) of the gas distribution disk body (1). As the thickness increases, the diameter of the pores (11) in the first region (Ⅰ), the second region (Ⅱ), and the third region (Ⅲ) of the gas distribution disk body (1) becomes smaller or the length of the pores becomes longer.

5. The gas distribution disc according to claim 4, characterized in that, The fine holes (12) of each air hole (11) of the air distribution plate body (1) serve as the air outlet section of the air hole (11), and the air inlet section of the air hole (11) includes a constant diameter section and a conical section connected in sequence. The length of the fine holes (11) in the first region (Ⅰ) of the gas distribution plate body (1) is 2.2~2.4mm; The length of the fine holes (11) in the second region (II) of the gas distribution plate body (1) is 2.5~2.7mm; The length of the fine holes (11) in the third region (Ⅲ) of the gas distribution plate body (1) is 2.9~3.1mm.

6. The gas distribution disc according to claim 4, characterized in that, The fine holes (12) of each air hole (11) of the air distribution plate body (1) are distributed between the air inlet section and the air outlet section of the air hole (11), and the air inlet section and the air outlet section of the air hole (11) are both conical sections. The length of the fine holes (11) in the first region (Ⅰ) of the gas distribution plate body (1) is 2.4~2.6mm; The length of the fine holes (11) in the second region (II) of the gas distribution plate body (1) is 2.7~2.9mm; The length of the fine holes (11) in the third region (Ⅲ) of the gas distribution plate body (1) is 3.1~3.3mm.

7. The gas distribution disc according to claim 4, characterized in that, The fine holes (12) of each air hole (11) of the air distribution plate body (1) serve as the air outlet section of the air hole (11), and the air inlet section of the air hole (11) is a conical section. The length of the fine holes (11) in the first region (Ⅰ) of the gas distribution plate body (1) is 2.2~2.4mm; The length of the fine holes (11) in the second region (II) of the gas distribution plate body (1) is 2.5~2.7mm; The length of the fine holes (11) in the third region (Ⅲ) of the gas distribution plate body (1) is 2.9~3.1mm.

8. A plasma-enhanced chemical vapor deposition apparatus, comprising a gas distribution disk, characterized in that, The gas equalization plate is the gas equalization plate as described in any one of claims 1-7.

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