Heating device and chemical vapor deposition equipment

Abstract

The utility model belongs to the technical field of semiconductor epitaxial growth, and discloses a heating device and chemical vapor deposition equipment. The heating device is used for heating a substrate and specifically comprises an outer cover and a supporting piece. Wherein a reaction cavity is formed in the outer cover, the substrate is arranged on the supporting piece, the supporting piece can rotate, a heating module is arranged in the supporting piece, the heating module works in an induction heating mode, a step part is annularly arranged on the inner wall, opposite to the heating module, of the supporting piece, the step part is provided with a plurality of step faces, and gaps between the step faces and the heating module are different. And the substrate is uniformly heated by the heating module. According to the utility model, the temperature field can be optimized, the uniformity of the formed film is improved, and the stability of the quality of the formed film is ensured.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor epitaxial growth, especially to heating device and chemical vapor deposition equipment. BACKGROUND

[0002] SiC (silicon carbide) CVD (chemical vapor deposition) film formation is an important thin film preparation technology, which is widely used in semiconductor, ceramic film and coating and many other fields. In SiC CVD film formation, a compound containing silicon and carbon is usually used as a precursor, and SiC thin film is deposited on the surface of the substrate by high-temperature cracking in a protective gas.

[0003] In the process of SiC CVD equipment film formation, high requirements are placed on film formation uniformity and productivity.

[0004] At present, single-zone planar induction heating is used to heat single large wafer, but due to the uneven distribution of the magnetic field generated by single-zone induction heating, it is difficult to ensure the uniformity of the temperature of the wafer at all places when the wafer is heated. Uneven heating of the wafer will cause uneven growth of the thin film in the semiconductor epitaxial structure, which will affect the working performance of the semiconductor device. Utility model content

[0005] The utility model aims at providing a kind of heating device and chemical vapor deposition equipment, for optimizing temperature field, improve the uniformity of film formation, guarantee the stability of film formation quality, guarantee the working performance of semiconductor device.

[0006] To achieve this purpose, the utility model adopts the following technical solutions:

[0007] Heating device for heating substrate, comprising:

[0008] Cover, the cover inside is equipped with reaction cavity;

[0009] Support, the support is located in the reaction cavity, the substrate is placed on the support, the support can rotate, and the inside of the support is equipped with heating module, the heating module works in induction heating mode, the support is equipped with stepped portion on the inner wall of the heating module, the stepped portion has multiple stepped surfaces, the gap between multiple stepped surfaces and the heating module is different, so that the heating module uniformly heats the substrate.

[0010] As an optional solution of the heating device, the heating module comprises a first induction coil arranged in a ring shape, and the support is provided with a protrusion on the inner wall of the first induction coil, and the protrusion is located at the center of the first induction coil, and the protrusion is arranged in a gap with the first induction coil.

[0011] As an optional solution of the heating device, the heating module further comprises a second induction coil arranged in a ring shape around the periphery of the first induction coil, and the second induction coil and the first induction coil are both planar coils.

[0012] As an optional solution of the heating device, the support is a cylindrical member, and a plurality of stepped surfaces are arranged in sequence in the direction in which the stepped surfaces extend outward from the center of the support.

[0013] As an optional solution of the heating device, the support is recessed inward relative to the surface of the substrate to form a first recess, and the first recess is in communication with the reaction cavity.

[0014] As an optional solution of the heating device, a plurality of annular grooves and / or annular holes are distributed in a circumferential direction on the outer wall of the support, and the annular grooves and / or the annular holes are located below the heating module.

[0015] As an optional solution of the heating device, when the outer wall of the support is provided with an annular hole, the interior of the support is connected to a protective gas, the protective gas can be discharged from the annular hole, the annular hole is arranged in an inclined manner relative to the rotation axis of the support, and when the protective gas is discharged from the annular hole, the protective gas has a downward extrusion effect on the support.

[0016] As an optional solution of the heating device, the heating device further comprises a ventilation module, the ventilation module is located at the top of the reaction cavity, the ventilation module is used to introduce a reaction gas into the reaction cavity, and the bottom of the reaction cavity is provided with an exhaust port.

[0017] As an optional solution of the heating device, the heating device further comprises a temperature detection module, and the temperature detection module and the heating module are signal connected.

[0018] Chemical vapor deposition equipment comprising the heating device of any one of the above solutions.

[0019] Advantages of the chemical vapor deposition equipment:

[0020] In the first aspect of the utility model, support piece is further provided in reaction cavity, substrate can be placed on support piece, alternating magnetic field is produced through heating module, when magnetic line of force passes through heated piece (the part of support piece supporting substrate), induction electromotive force is produced by being cut by magnetic line of force, and eddy current is produced in heated piece, heated piece is heated due to eddy current's joule heating effect in heated piece. Because induction heating is at different parts of support piece supporting substrate, the sparseness degree of magnetic line of force in space is different, and the heating efficiency of each part is affected, therefore, through annularly arranging ladder part on the inner wall of support piece relative to heating module, and making the multiple ladder faces of ladder part produce different gaps with heating module, temperature field is further optimized, the uniformity of substrate heating is improved, the uniformity of substrate film forming is improved, and the quality stability is guaranteed. Meanwhile, combined with the rotation motion of support frame, the uniformity of support piece heat conduction to substrate can be further improved.

[0021] In the second aspect of the utility model, based on the chemical vapor deposition equipment of the heating device, the heating efficiency of the substrate can be effectively improved, the production capacity can be improved, and the uniformity of the substrate heating can be further guaranteed, the uniformity of the film forming can be improved, and the product quality can be guaranteed. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 It is the sectional view of the heating device provided by the utility model embodiment;

[0023] Figure 2 It is the winding schematic view of the first induction coil and the second induction coil provided by the utility model embodiment;

[0024] Figure 3 It is the contrast schematic view of the support piece and the heating module two corresponding visual angles provided by the utility model embodiment;

[0025] Figure 4 It is the structure schematic view of the top of support piece provided by the utility model embodiment;

[0026] Figure 5 It is the structure schematic view of the support piece of outer wall annular groove provided by the utility model embodiment;

[0027] Figure 6 It is the partial schematic view of the support piece of outer wall annular hole provided by the utility model embodiment;

[0028] Figure 7 It is the isometric view of the support piece of outer wall annular hole provided by the utility model embodiment;

[0029] Figure 8 It is the front view of the support piece of outer wall annular hole provided by the utility model embodiment;

[0030] Figure 9 It isFigure 8 A-A cross-section view;

[0031] Figure 10 is the temperature field contrast curve figure of the two structures that the support piece is provided with the stepped part (after optimization) and the support piece is not provided with the stepped part (before optimization) provided by the embodiment of the utility model;

[0032] Figure 11 is the temperature response contrast curve figure of the two structures that the support piece is provided with the stepped part (after optimization) and the support piece is not provided with the stepped part (before optimization) provided by the embodiment of the utility model.

[0033] In the figure:

[0034] 100, substrate;

[0035] 1, cover; 11, reaction cavity; 2, support piece; 21, heating module; 211, first induction coil; 212, second induction coil; 22, stepped part; 221, stepped surface; 221a, first area; 221b, second area; 221c, third area; 221d, fourth area; 23, protruding part; 24, first groove; 241, notch; 242, boss; 25, annular groove; 26, annular hole;

[0036] 3, temperature detection module;

[0037] 4, ventilation module;

[0038] 5, exhaust port;

[0039] 6, tray.

[0040] X, heat conduction path. DETAILED DESCRIPTION

[0041] The utility model will be further explained in detail in combination with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the utility model, and not limited to the utility model. In addition, it should be noted that, in order to facilitate the description, only the part related to the utility model is shown in the drawings, not all structures.

[0042] In the description of the utility model, unless otherwise explicitly specified and limited, the terms "connected", "connected", "fixed" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated, it can be mechanically connected, or it can be electrically connected, it can be directly connected, or it can be indirectly connected through the intermediate medium, it can be the internal communication of two elements or the interaction relationship of two elements. For ordinary skilled in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0043] In the utility model, unless another definite provision and limitation, first feature is in second feature " on " or " under " can include that first and second features are in direct contact, also can include that first and second features are not in direct contact but contact through other feature between them. Moreover, first feature is " on ", " above " and " upper surface " of second feature includes that first feature is directly above and obliquely above second feature, or only indicates that horizontal height of first feature is higher than second feature. First feature is " under ", " below " and " lower surface " of second feature includes that first feature is directly below and obliquely below second feature, or only indicates that horizontal height of first feature is less than second feature.

[0044] In the description of the embodiment, the terms "upper", "lower", "right", "left", "horizontal", "vertical", and "radial" refer to the orientation or position shown in the drawings, which are for convenience and simplification of description and operation, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be construed as limiting the present utility model. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0045] Please refer to the accompanying Figure 1 The first aspect of the embodiment relates to a heating device for heating a substrate 100, specifically comprising an outer cover 1 and a support 2. The outer cover 1 is internally provided with a reaction chamber 11; the support 2 is located in the reaction chamber 11, the substrate 100 is placed on the support 2, the support 2 can rotate, and the inside of the support 2 is provided with a heating module 21, the heating module 21 works in an induction heating mode, a stepped portion 22 is annularly arranged on the inner wall of the support 2 relative to the heating module 21, the stepped portion 22 has a plurality of stepped surfaces 221, and the gaps between the plurality of stepped surfaces 221 and the heating module 21 are different, so that the heating module 21 uniformly heats the substrate 100.

[0046] In the embodiment, the outer cover 1 is a cylindrical shell made of metal material, and the internal cavity is used to form the reaction chamber 11. Adaptively, the reaction chamber 11 is also cylindrical in shape, the substrate 100 is located inside the reaction chamber 11, the reaction gas in the reaction chamber 11 is heated by the reaction chamber 11, and finally deposited on the substrate 100 to form a SiC thin film.

[0047] Further, the support 2 is provided with a heating module 21 inside, which works by inductive heating. Specifically, the heating module 21 generates an alternating magnetic field, when the magnetic lines thereof pass through the heated part (the part of the support 2 supporting the substrate 100), an induced electromotive force is generated by the cutting of the magnetic lines, thereby generating eddy current inside the heated part, and Joule heat effect is generated due to the eddy current, so that the heated part is heated. Since the heating module 21 adopts the inductive heating mode, the magnetic lines are different in the space at different parts of the support 2 supporting the substrate 100, which will affect the heating uniformity of the parts. Therefore, a stepped portion 22 is arranged around the inner wall of the support 2 relative to the heating module 21, and the multiple stepped surfaces 221 of the stepped portion 22 are arranged to have different gaps with the heating module 21, so as to further optimize the temperature field and improve the heating uniformity of the support 2, thereby realizing the heating uniformity of the substrate 100, and effectively improving the film forming uniformity of the substrate 100 and ensuring the stability of the quality. In addition, the rotation of the support 2 further improves the heating uniformity of the support 2.

[0048] Please refer to the accompanying drawings Figure 1 - the accompanying drawings Figure 3 Optionally, the heating module 21 comprises a first induction coil 211 arranged in a ring shape, and the inner wall of the support 2 relative to the first induction coil 211 is provided with a protruding portion 23, which is located at the center of the first induction coil 211 and is arranged in a gap with the first induction coil 211.

[0049] In the embodiment, the first induction coil 211 is arranged in a plane to form a "round cake shape", and the magnetic lines at the center of the first induction coil 211 are relatively less, so that the heating efficiency at the center of the first induction coil 211 is lower than that of other regions. By arranging the protruding portion 23 at the center, the characteristic that the magnetic field strength is stronger when the distance is closer is fully utilized to optimize the power distribution in the coverage area of the first induction coil 211, and more power is distributed in the central region, thereby ensuring the heating uniformity. In the embodiment, the distance between the protruding portion 23 and the first induction coil 211 is generally maintained at 2-5 mm, the diameter of the protruding portion 23 is D0, and D0 is less than the diameter of the innermost circle of the first induction coil 211.

[0050] Further, the heating module 21 further comprises a second induction coil 212 arranged in a ring shape outside the periphery of the first induction coil 211, and the second induction coil 212 and the first induction coil 211 are both planar coils.

[0051] The embodiment adopts a double-coil structure and the second induction coil 212 and the first induction coil 211 are both planar coils, that is, the second induction coil 212 is further wound around the outer periphery of the first induction coil 211, the first induction coil 211 and the second induction coil 212 combine to form a "round cake", and the first induction coil 211 and the second induction coil 212 can be controlled in power respectively to improve the adjustability of temperature control, so as to facilitate obtaining a uniform heat field, the first induction coil 211 and the second induction coil 212 are gold-plated on the surface, the film thickness is 1-3 μm, and the outermost diameter of the second induction coil 212 is 90%-100% of the diameter of the support 2.

[0052] Further, the support 2 is a cylindrical member, and the plurality of stepped surfaces 221 are arranged in sequence in the direction in which the center of the support 2 extends towards the outer wall.

[0053] Please refer to the accompanying drawings Figure 3 Specifically, in the embodiment, the stepped surfaces 221 form three regions in sequence along the center towards the outside, which are a first region 221a, a second region 221b and a third region 221c respectively; the second region 221b is a reference surface, which should be arranged according to the heating member, the distance between the second region 221b and the heating module 21 is d, and d: 6-12 mm, the first region 221a is farthest from the first induction coil 211, which forms an inner recessed region, the distance between the first region 221a and the first induction coil 211 is d1, and d1: 1.3-1.7d, the diameter of the first region 221a can be 90%-120% of the outer diameter D2 of the first induction coil 211; the diameter of the third region 221c can be 80%-95% of the outer diameter D4 of the second induction coil 212, the inner diameter of the second induction coil 212 is D3, the distance between the third region 221c and the second induction coil 212 is d3, and d3

[0054] In the embodiment, the third region 221c is closer to the second induction coil 212 relative to the reference surface, forming a region protruding outward, and the third region 221c is closer to the outer ring of the second induction coil 212 in the plane. The protruding third region 221c can change the power distribution of the second induction coil 212, so that more power is distributed to the outer region of the outer ring. In combination with the inwardly recessed region formed by the first region 221a, the magnetic field strength is reduced due to the distance from the second induction coil 212, and the power consumption in the inner region of the inner ring of the second induction coil 212 is also reduced. In combination with the above two effects, the thermal field of the inner ring and the outer ring of the second induction coil 212 can be improved, thereby ensuring the uniformity of the induced heat in the induction region covered by the second induction coil 212.

[0055] On the other hand, the fourth region 221d is arranged close to the center of the first induction coil 211, and the high magnetic field strength of the central region of the first induction coil 211 is utilized together with the protruding portion 23. The closer the distance from the first induction coil 211, the stronger the magnetic field strength. The fourth region 221d changes the power distribution of the inner ring of the first induction coil 211. In addition, in combination with the inwardly recessed region formed by the first region 221a, the magnetic field strength is weakened due to the distance from the second induction coil 212. However, the embodiment adopts a double-coil arrangement, and there is a heat superposition region at the boundary of the first induction coil 211 and the second induction coil 212. The heat generated by the first induction coil 211 and the heat generated by the second induction coil 212 are obtained. Therefore, in combination with the above effects, the uniformity of the induced heat in the entire induction region covered by the second induction coil 212 can be ensured.

[0056] Please refer to the accompanying drawings Figure 1 and the accompanying drawings Figure 4 Optionally, the support 2 is recessed inward relative to the surface of the substrate 100 to form a first recess 24, and the first recess 24 is in communication with the reaction cavity 11.

[0057] In the embodiment, a tray 6 is arranged between the support 2 and the substrate 100, and the tray 6 is disc-shaped and used to support the substrate 100 to ensure that the substrate 100 is placed flat. The support 2 is recessed inward relative to the surface of the substrate 100 to form a first recess 24, and the first recess 24 is a circular groove. The area of the first recess 24 in the horizontal plane needs to be able to completely cover the area of the substrate 100. The sidewall of the first recess 24 is arranged with a slot 241 and a boss 242 at intervals. The tray 6 is pressed against the boss 242, and the slot 241 is in communication with the reaction cavity 11. The depth of the first recess 24 is about 0.2-0.5 mm. The first recess 24 can change the heat transfer mode from heat conduction to heat radiation, further improving the uniformity of the heat received by the tray 6, and thereby improving the uniformity of the temperature of the substrate 100.

[0058] Please refer to the accompanying drawingsFigure 5 and the accompanying drawings Figure 6 Optionally, a plurality of annular grooves 25 and / or annular holes 26 are arranged on the outer wall of the support 2 along the circumference and are located below the heating module 21.

[0059] In this embodiment, the annular grooves 25 are strip grooves extending horizontally along the outer wall of the support 2, and a plurality of annular grooves 25 are arranged at intervals and are located below the heating module 21. The induction heat generated by the heating module 21 can be isolated from being transmitted downward along the support 2 through the annular grooves 25, i.e. the heat conduction path X needs to bypass the annular grooves 25 to be transmitted downward. Of course, the annular holes 26 can also achieve the technical effect of blocking the induction heat generated by the heating module 21 from being transmitted downward along the support 2.

[0060] Please refer to the accompanying drawings Figure 6 - the accompanying drawings Figure 9 Further, when the outer wall of the support 2 is provided with the annular holes 26, the interior of the support 2 is filled with the protective gas, the protective gas can be discharged from the annular holes 26, and the annular holes 26 are arranged obliquely relative to the rotation axis of the support 2. When the protective gas is discharged from the annular holes 26, the protective gas has a downward extrusion effect on the support 2.

[0061] Specifically, if the outer wall of the support 2 is provided with the annular holes 26, the annular holes 26 are characterized in that there is an inclination angle θ between the hole axis and the normal of the circle where the hole midpoint is located, and there is an inclination angle α between the hole axis and the cylinder center axis. Since the interior space of the support 2 is provided with G5 gas as the protective gas, the protective gas is composed of argon or hydrogen. When the protective gas flows out of the annular holes 26, a large downward pressure can be reversely applied to the support 2, thereby improving the stability of the rotation of the support 2. The advantage of the annular holes 26 is that a larger downward pressure can be applied to the rotating barrel by using the difference between the relative speed of the rotation of the support 2 and the interior protective gas, thereby effectively improving the stability of the rotation.

[0062] Optionally, the heating device further comprises a temperature detection module 3, and the temperature detection module 3 is signal connected with the heating module 21.

[0063] In this embodiment, the temperature detection module 3 comprises a temperature sensor with temperature measurement function and a temperature feedback component. The temperature sensor can directly monitor the temperature of the heating module 21, and the temperature feedback component can calculate the difference PID between the target temperature to adjust the power of the heating module 21 to achieve closed-loop control, thereby stabilizing the growth temperature of the epitaxial process and ensuring the safety and intelligence of temperature control and temperature adjustment.

[0064] Optionally, the heating device further comprises a driving member, and the driving member is in transmission connection with the support 2 and is used to drive the support 2 to rotate.

[0065] In the embodiment, the driving member is a rotary motor, which can drive the support member 2 to rotate around the shaft, and the rotating speed of the support member 2 can be above 100 rpm. The bottom of the support member 2 is also provided with an opening for the protective gas G5 to enter the support member 2.

[0066] Optionally, the heating device further comprises a ventilation module 4, which is located at the top of the reaction cavity 11 and is used for introducing reaction gas into the reaction cavity 11. The bottom of the reaction cavity 11 is provided with an exhaust port 5.

[0067] In the embodiment, the ventilation module 4 is used for introducing reaction gas into the reaction cavity 11, and the reaction gas is deposited on the substrate 100 to form a film after being heated. The reaction cavity 11 is additionally provided with an exhaust port 5 at the bottom, which is used for discharging excess reaction gas and balancing the internal air pressure.

[0068] Please refer to the attached Figure 10 The temperature response of the support member 2 with the stepped portion 22 and the temperature response of the support member 2 without the stepped portion 22 (the whole is flat) are compared. Since the substrate 100 rotates when heated, the temperatures of the points on the substrate 100 at the same radius and in the circumferential direction are the same, that is, the temperature uniformity can be represented by the temperature field in the radial direction. As shown in the attached Figure 11 It can be seen that after the support member 2 is provided with the stepped portion 22, the change range of the curve is reduced, and the heating uniformity of the substrate 100 can be improved by the heating device.

[0069] Please refer to the attached Figure 11 The temperature response of the support member 2 with the stepped portion 22 and the temperature response of the support member 2 without the stepped portion 22 are compared. The improved curve is compared with the curve before improvement. There is no area where the first induction coil 211 and the second induction coil 212 cause temperature rise or temperature drop at the same time, which indicates that the temperature adjustability of the first induction coil 211 and the second induction coil 212 corresponding to each area of the support member 2 is good.

[0070] The vertical coordinate of the attached Figure 11 represents the difference between the corresponding temperature and the average temperature of the whole first induction coil 211 and second induction coil 212 at the time of unit input power change. It is easy to understand that when the power of the first induction coil 211 is increased, the temperature of the central area of the support member 2 corresponding to the first induction coil 211 will rise, which will cause the overall average temperature to rise at the same time. However, in this process, the power of the second induction coil 212 area is unchanged, and the temperature rise amplitude of the outer area of the support member 2 corresponding to the second induction coil 212 area is lower than the average temperature rise amplitude. Therefore, in Figure 11 the second induction coil 212 area tends to be negative.

[0071] It should be noted that, in an ideal state, the temperature of the center region of the substrate 100 is relatively low, and the temperature distribution can be improved by increasing the power output of the first induction coil 211. Similarly, when the temperature of the outer region of the substrate 100 is low, the power of the second induction coil 212 needs to be increased to make the entire temperature field consistent, thereby ensuring the uniformity of heating. However, there is a region on the substrate 100, and no matter how the output power of the first induction coil 211 or the second induction coil 212 is increased, the temperature of this region will increase, thereby causing the temperature of this region to be difficult to adjust, and thus the entire temperature field is difficult to adjust. Please further refer to the accompanying Figure 11 The curve before improvement has a triangular region near the radius of 50mm of the substrate 100, and in the triangular region, the temperature field is difficult to adjust. However, after optimization, the first induction coil 211, the second induction coil 212 and the abscissa intersect at a point, thereby optimizing the triangular region which is difficult to adjust.

[0072] The second aspect of the present embodiment also relates to a chemical vapor deposition device, which comprises the above heating device.

[0073] The chemical vapor deposition device based on the heating device can effectively improve the heating efficiency of the substrate, improve the production capacity, and further ensure the uniformity of the substrate heating, improve the uniformity of film formation, and ensure the product quality.

[0074] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the implementation modes of the present application. For ordinary skilled persons in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present application. Here, it is not necessary and impossible to exhaust all the implementation modes. Any modification, equivalent substitution and improvement made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. A heating device for heating a substrate (100), characterized in that, include: An outer cover (1) is provided inside the outer cover (1); A support member (2) is located inside the reaction chamber (11). The substrate (100) is placed on the support member (2). The support member (2) can rotate. A heating module (21) is provided inside the support member (2). The heating module (21) works by induction heating. A stepped portion (22) is provided around the inner wall of the support member (2) relative to the heating module (21). The stepped portion (22) has multiple stepped surfaces (221). The gaps between the multiple stepped surfaces (221) and the heating module (21) are different so that the heating module (21) heats the substrate (100) uniformly.

2. The heating device according to claim 1, characterized in that, The heating module (21) includes a first induction coil (211) wound in a ring. The support member (2) has a protrusion (23) on the inner wall of the first induction coil (211). The protrusion (23) is located at the center of the first induction coil (211), and the protrusion (23) is spaced apart from the first induction coil (211).

3. The heating device according to claim 2, characterized in that, The heating module (21) further includes a second induction coil (212) that is annularly wound around the outer periphery of the first induction coil (211). Both the second induction coil (212) and the first induction coil (211) are planar coils.

4. The heating device according to claim 1, characterized in that, The support member (2) is a cylindrical member, and the plurality of stepped surfaces (221) are arranged sequentially in the direction extending from the center of the support member (2) toward the outer wall.

5. The heating device according to claim 1, characterized in that, The support member (2) is recessed inward relative to the surface of the substrate (100) to form a first groove (24), and the first groove (24) is connected to the reaction chamber (11).

6. The heating device according to claim 1, characterized in that, The outer wall of the support member (2) has a plurality of annular grooves (25) and / or annular holes (26) spaced apart along the circumference, and the annular grooves (25) and / or the annular holes (26) are located below the heating module (21).

7. The heating device according to claim 1, characterized in that, When the outer wall of the support member (2) is provided with an annular hole (26), a protective gas is introduced into the interior of the support member (2), and the protective gas can be discharged from the annular hole (26). The annular hole (26) is inclined relative to the rotation axis of the support member (2). When the protective gas is discharged from the annular hole (26), the protective gas has a downward squeezing effect on the support member (2).

8. The heating device according to claim 1, characterized in that, The heating device also includes a ventilation module (4), which is located at the top of the reaction chamber (11). The ventilation module (4) is used to introduce reaction gas into the reaction chamber (11), and the bottom of the reaction chamber (11) has an exhaust port (5).

9. The heating device according to claim 1, characterized in that, The heating device also includes a temperature detection module (3), which is signal-connected to the heating module (21).

10. A chemical vapor deposition apparatus, characterized in that, Includes the heating device as described in any one of claims 1-9.

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