Etching equipment
By installing a wafer position detection device and a moving device in the process chamber of the etching equipment, the wafer position is detected and adjusted, which solves the problem of increased etching energy consumption caused by wafer deflection and achieves stable operation and improved precision of the etching equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-04-07
AI Technical Summary
During the etching process, the wafer may deflect, causing the ion beam to deviate on the photolithographic pattern, increasing etching energy consumption, and hindering the stable operation of the etching equipment.
A wafer position detection device is installed in the process chamber of the etching equipment. The wafer position is detected by image acquisition and illumination components. The wafer position is adjusted by a moving device to eliminate deflection. A rotating shielding device is also provided to protect the detection device and avoid adverse effects during the etching process.
It effectively reduces or eliminates wafer deflection, ensures low-power and stable operation of etching equipment, reduces equipment maintenance costs, and improves etching accuracy.
Smart Images
Figure CN224096685U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor processing technology, and in particular to an etching apparatus. Background Technology
[0002] Etching equipment is commonly used to etch semiconductors. During etching, inert gases such as Ar, Kr, or Xe are filled into the ion source discharge chamber, ionizing to form a uniform plasma. Then, the ions are drawn out in a beam by the gate and accelerated. The ion beam with a certain energy enters the process chamber and bombards the photolithographic pattern area on the wafer surface on the wafer stage in the process chamber, causing material atoms to sputter, thereby achieving the etching purpose.
[0003] Before etching, the transfer platform first transfers the wafer to the calibrator for position calibration. Then, the transfer platform transfers the wafer to the ejector pin in the process chamber. The ejector pin then descends and places the wafer onto the electrostatic chuck on the wafer stage, where it is held in place by the electrostatic chuck before the etching process begins.
[0004] Ideally, the wafer should be held in place at a preset reference position. However, in reality, the actual position of the wafer after being held in place may deviate slightly from the reference position. The larger the deflection angle, the shorter the path of the ion beam on the lithographic pattern. For example, when the wafer deviates by 0.05° from the reference position, the path of the ion beam on the lithographic pattern is 70µm; when the wafer deviates by 0.5° from the reference position, the path of the ion beam on the lithographic pattern is 7µm. The shorter the path of the ion beam on the lithographic pattern, the greater the power consumption required to complete the etching, which is detrimental to the low-power and stable operation of the etching equipment.
[0005] Therefore, how to reduce or eliminate wafer deflection to ensure low-power and stable operation of the etching process is a technical problem that needs to be solved by those skilled in the art. Summary of the Invention
[0006] To solve the above-mentioned technical problems, this application provides an etching apparatus, which includes a process chamber, a wafer stage, a wafer position detection device, and a moving device. A first mounting hole is formed on the wall of the process chamber, and the wafer position detection device is movably inserted into the first mounting hole. The wafer position detection device can detect the wafer position on the wafer stage in the process chamber. The moving device is drivenly connected to the wafer position detection device, and the moving device can drive the wafer position detection device to move into the process chamber and out of the process chamber.
[0007] In one embodiment of the etching equipment, the wafer position detection device includes an image acquisition component capable of acquiring images within the process chamber.
[0008] In one embodiment of the etching equipment, the wafer position detection device includes an illumination component capable of illuminating the process chamber.
[0009] In one embodiment of the etching equipment, the wafer position detection device includes a receiving component, the inner cavity of which is isolated from the inner cavity of the process chamber, an image acquisition component and an illumination component are located within the receiving component, and at least a portion of the wall of the receiving component is a transparent area, wherein the image acquisition component and the illumination component are respectively able to acquire images and illuminate the process chamber through the transparent area.
[0010] In one embodiment of the etching apparatus, the receiving component includes a receiving tube and a shielding portion. The receiving tube includes a side wall and an end wall. The side wall is sealed to the first mounting hole. The end wall is located at the end of the side wall near the wafer. The end wall has a through hole. The shielding portion blocks the through hole. At least a portion of the shielding portion corresponding to the through hole is a transparent area.
[0011] In one embodiment of the etching apparatus, the shielding portion includes a seal and a baffle. The baffle is detachably connected to the end wall on the side away from the inner cavity of the receiving tube and shields the through hole. The seal is sealingly connected to the end wall on the side close to the inner cavity of the receiving tube and shields the through hole. At least a portion of the area of the baffle and the seal corresponding to the through hole is a transparent area.
[0012] In one embodiment of the etching equipment, the first mounting hole is disposed on the top wall of the process chamber, and the moving device is capable of driving the wafer position detection device to move up and down.
[0013] One embodiment of the etching apparatus includes a rotating shielding device rotatably mounted on the wall of the process chamber, the rotating shielding device being rotatable to a position that opens the first mounting hole and a position that closes the first mounting hole.
[0014] In one embodiment of the etching apparatus, the wafer stage is provided with a reference mark for aligning with a positioning mark on the wafer to identify the reference position of the wafer, so that the deflection angle of the wafer and the deflection direction of the wafer can be calculated based on the relative position of the reference mark and the positioning mark on the image acquired by the wafer position detection device.
[0015] One embodiment of the etching apparatus includes a drive device that is connected to the wafer stage and is capable of driving the wafer stage to rotate around its own central axis.
[0016] The etching equipment provided in this application has a wafer position detection device installed in a first mounting hole in the wall of the process chamber. This device can detect the wafer position on the wafer stage, allowing for timely correction of the wafer position based on the detection results. This reduces or eliminates wafer deflection, ensuring low-power and stable operation of the etching equipment. Furthermore, a moving device is included to drive the wafer position detection device to move into and out of the process chamber. When detecting the wafer position, the device can be at least partially moved into the process chamber, bringing it closer to the wafer for more accurate position detection. Before the etching process, the device can be moved out of the process chamber to avoid or reduce the adverse effects of the etching process on it. Attached Figure Description
[0017] Figure 1 A schematic diagram of one embodiment of the etching apparatus provided in this application;
[0018] Figure 2 for Figure 1 A magnified view of the area inside the center circle;
[0019] Figure 3 This is a top view of the wafer positioned on the wafer carrier.
[0020] Figure 4 for Figure 3 A magnified view of the area inside the center circle;
[0021] Figure 5 This is a flowchart of the working process of the etching equipment.
[0022] The annotations in the attached figures are explained as follows:
[0023] 100 process chamber, X first mounting hole, Y second mounting hole;
[0024] 200 Stage, 201 Adsorption section, 202 Limiting section, A Control mark;
[0025] 300 Wafer position detection device, 301 Image acquisition component, 302 Illumination component, 303 Receiving component, 3031 Receiving tube, 3031a Sidewall, 3031b Endwall, Z-through hole, 3032 Shielding part, 3032a Sealing element, 3032b Baffle.
[0026] 400 Mobile device, 401 Mobile power component, 402 Support;
[0027] 500 Rotary shielding device, 501 Rotary power component, 502 Shielding plate;
[0028] 600 ion source discharge chamber;
[0029] 700 gate;
[0030] 01 Wafer, B Position Marker. Detailed Implementation
[0031] This application provides an etching apparatus. To enable those skilled in the art to better understand the technical solution of this application, the following detailed description is provided in conjunction with the accompanying drawings and specific embodiments.
[0032] like Figures 1-4 As shown, the etching apparatus provided in this application includes at least a process chamber 100, a wafer stage 200, a wafer position detection device 300, and a moving device 400. In the illustrated embodiment, the etching apparatus further includes an ion source discharge chamber 600 and a gate 700.
[0033] The wafer stage 200 is located within the process chamber 100 and is used to hold and hold the wafers. Specifically, as shown... Figure 3 As shown, the wafer stage 200 includes at least an adsorption section 201 for adsorbing and fixing wafers. Exemplarily, the adsorption section 201 can be an electrostatic adsorption section, a vacuum adsorption section, etc. In the illustrated embodiment, as... Figure 3 As shown, the wafer stage 200 also includes a limiting part 202 for limiting the wafer, which surrounds the outside of the adsorption part 201 and protrudes from the upper end surface of the adsorption part 201.
[0034] The side opening of the process chamber 100 is connected to the side opening of the ion source discharge chamber 600. A gate 700 is provided at the side opening of the ion source discharge chamber 600. During etching, an inert gas such as Ar, Kr, or Xe is filled into the ion source discharge chamber 600, ionizing to form a uniform plasma. Then, the ions are drawn out in a beam by the gate 700 and accelerated. The ion beam with a certain energy enters the process chamber 100 and bombards the wafer surface on the stage 200, causing material atoms to sputter, thereby achieving the etching purpose.
[0035] A first mounting hole X is provided on the wall of the process chamber 100. A wafer position detection device 300 is movably inserted into the first mounting hole X, enabling it to detect the position of the wafer on the stage 200. Specifically, the wafer position detection device 300 can be any detection device with position detection function, such as an infrared detection device or an image detection device. In the illustrated embodiment, the first mounting hole X is located on the top wall of the process chamber 100, making it easier for the wafer position detection device 300, inserted into the first mounting hole X, to detect the wafer position.
[0036] The moving device 400 is connected to the wafer position detection device 300 via a transmission connection, and is capable of driving the wafer position detection device 300 to move into and out of the process chamber 100. The moving direction of the wafer position detection device 300 is approximately along the axial direction of the first mounting hole X. In the illustrated embodiment, the axial direction of the first mounting hole X is along the vertical direction, and the moving device 400 drives the wafer position detection device 300 to move up and down. In the illustrated embodiment, the moving device 400 includes a moving power element 401 and a support 402. The moving power element 401 is supported and fixed on the top wall of the process chamber 100 by the support 402.
[0037] The aforementioned etching equipment has a wafer position detection device 300 installed in the first mounting hole X in the wall of the process chamber 100. This device can detect the wafer position on the stage 200, allowing for timely correction of the wafer position based on the detection results. This reduces or eliminates wafer deflection, ensuring low-power and stable operation of the etching equipment. Furthermore, a moving device 400 is provided, capable of driving the wafer position detection device 300 to move both inside and outside the process chamber 100. When detecting the wafer position, the device can be moved at least partially into the process chamber 100, bringing it closer to the wafer for more accurate position detection. Before etching, the device can be moved outside the process chamber 100 to avoid or reduce adverse effects on the device.
[0038] It should be noted that, typically, before entering the process chamber 100, the wafer undergoes positional calibration on a calibrator. However, during the process from calibration to being fixed by the stage 200, the wafer may still deflect, such as... Figure 5 As shown, this process typically involves a transfer platform transferring the wafer from the calibrator to a pin within the process chamber 100. The pin then lowers the wafer onto the adsorption section 201 of the stage 200, where it is held in place. However, this application assembles a wafer position detection device 300 on the wall of the process chamber 100. This allows the wafer position to be detected after it is secured by the stage 200. If the wafer is deflected, it can be recalibrated before the etching process can proceed.
[0039] In some embodiments, the etching apparatus includes a drive mechanism (not shown) that is connected to the wafer stage 200 and can drive the wafer stage 200 to rotate about its own central axis. Thus, if the wafer is deflected, the wafer position can be corrected by driving the wafer stage 200 to rotate about its own central axis in the opposite direction to the wafer deflection by the same angle as the wafer deflection angle.
[0040] In some embodiments, such as Figure 2 As shown, the wafer position detection device 300 is an image detection device, including an image acquisition component 301. The image acquisition component 301 is capable of acquiring images within the process chamber 100. For example, the image acquisition component 301 can be a camera, video camera, etc. Additionally, the image acquisition component 301 can be externally connected to a data analysis processor, enabling the data analysis processor to calculate the wafer deflection angle and determine the wafer deflection direction based on the images acquired by the image acquisition component 301. When the wafer position detection device 300 is an image detection device, during image acquisition, the moving device 400 can be used to move the wafer position detection device 300 to adjust the focal length of the image acquisition component 301 to a suitable position.
[0041] In some embodiments, such as Figure 3 and Figure 4 As shown, the limiting part 202 of the wafer stage 200 is provided with a reference mark A for marking the reference position of the wafer. Specifically, the wafer 01 is provided with a positioning mark B, which is usually a small V-shaped or U-shaped groove cut out on the wafer 01 to locate the position of the wafer 01 and mark its crystal orientation. When the positioning mark B of the wafer and the reference mark A of the wafer stage 200 are aligned, it indicates that the wafer is exactly in the reference position. When the positioning mark B of the wafer and the reference mark A of the wafer stage 200 are not aligned, it indicates that the wafer is deflected relative to the base position. The angle between the line connecting the positioning mark B and the reference mark A to the center of the wafer stage 200 is the deflection angle of the wafer (X° in the figure). In this way, the deflection angle of the wafer and the direction of wafer deflection can be accurately calculated and determined by the relative position of the positioning mark B and the reference mark A in the image acquired by the image acquisition unit 301.
[0042] In some embodiments, such as Figure 2 As shown, the wafer position detection device 300 also includes an illumination component 302, which illuminates the process chamber 100. This ensures that the image acquired by the image acquisition component 301 is clear, avoiding situations where the wafer deflection angle cannot be calculated or is inaccurate due to unclear images. In the figure, the illumination component 302 surrounds the image acquisition component 301 to provide 360° omnidirectional illumination.
[0043] In some embodiments, such as Figure 2As shown, the wafer position detection device 300 also includes a receiving component 303. The inner cavity of the receiving component 303 is isolated from the inner cavity of the process chamber 100, meaning that the inner cavity of the receiving component 303 and the inner cavity of the process chamber 100 are not interconnected. When the receiving component 303 is provided, both the image acquisition component 301 and the illumination component 302 are located within the receiving component 303. At least a portion of the wall of the receiving component 303 is a transparent area, allowing the image acquisition component 301 to acquire images of the process chamber 100 through the transparent area, and allowing the illumination component 302 to illuminate the process chamber 100 through the transparent area. The receiving component 303 serves to protect the illumination component 302 and the image acquisition component 301.
[0044] In some embodiments, such as Figure 2 As shown, the receiving component 303 includes a receiving tube 3031 and a blocking portion 3032. The receiving tube 3031 includes a side wall 3031a and an end wall 3031b. The side wall 3031a is sealed to the first mounting hole X. The end wall 3031b has a through hole Z. The blocking portion 3032 blocks the through hole Z. At least a portion of the blocking portion 3032 corresponding to the through hole Z is a transparent area. In the figure, the end of the receiving tube 3031 opposite to the end wall 3031b is an open end. Figure 1 The upper end of the receiving tube 3031), the output part of the moving power element 401 extends into the receiving tube 3031 from the open end and is fixedly connected to the receiving tube 3031. It should be noted that the structure of the receiving component 303 is not limited to the illustrated embodiment, as long as it can provide receiving space and can be inserted into the first mounting hole X.
[0045] In some embodiments, such as Figure 2 As shown, the shielding part 3032 includes a seal 3032a and a baffle 3032b. The seal 3032a is sealed to the side of the end wall 3031b near the inner cavity of the receiving tube 3031. Figure 1 The upper side of the middle end wall 3031b) and the through hole Z are blocked. The baffle 3032b is detachably connected to the side of the end wall 3031b away from the inner cavity of the receiving tube 3031. Figure 1 The lower side of the middle wall 3031b blocks the through hole Z. Exemplarily, the detachable connection method can be a threaded connection, snap-fit, etc. At least a portion of the area corresponding to the through hole Z of the seal 3032a and the baffle 3032b is a transparent area. The baffle 3032b and the seal 3032a can protect the lens of the image acquisition component 301 from impurities. The baffle 3032b can protect the seal 3032a from impurities, thus ensuring that the transparent area of the seal 3032a maintains good light transmittance for a long time. After a period of use, the light transmittance of the transparent area of the baffle 3032b will deteriorate. At this time, the baffle 3032b can be directly replaced, avoiding the cumbersome operation of replacing the seal 3032a and the potential equipment damage caused by it.
[0046] In some embodiments, the etching apparatus includes a rotating shielding device 500. The rotating shielding device 500 is rotatably mounted on the wall of the process chamber 100 and can rotate to a position where the first mounting hole X is open and a position where the first mounting hole X is closed. Thus, after detecting the wafer position, the wafer position detection device 300 can be driven out of the process chamber 100 by the moving device 400, causing one end of the wafer position detection device 300 inside the process chamber 100 to retract into the first mounting hole X. Then, the rotating shielding device 500 is used to close the first mounting hole X before the etching process is performed. This prevents substances from depositing on the wafer position detection device 300 through the first mounting hole X during the etching process, thereby extending the component replacement cycle of the wafer position detection device 300 and reducing the use and maintenance costs of the etching equipment. In the figure, the rotating shielding device 500 includes a rotating power element 501 and a shielding plate 502. A second mounting hole Y is provided on the top wall of the process chamber 100. The output shaft of the rotating power element 501 passes through the second mounting hole Y and extends into the process chamber 100 to connect with the shielding plate 502. It should be noted that the structure and installation position of the rotating shielding device 500 are not limited to the illustrated embodiment, as long as it can rotate to close and open the first mounting hole X.
[0047] The above embodiments can be freely combined without conflict.
[0048] The above examples illustrate the principles and implementation methods of this application. The descriptions of the embodiments are merely for the purpose of helping to understand the methods and core ideas of this application. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from its principles, and these improvements and modifications also fall within the protection scope of this application.
Claims
1. An etching apparatus, characterized in that, The etching equipment includes a process chamber (100), a wafer stage (200), a wafer position detection device (300), and a moving device (400). A first mounting hole (X) is provided on the wall of the process chamber (100). The wafer position detection device (300) is movably inserted into the first mounting hole (X). The wafer position detection device (300) can detect the wafer position on the wafer stage (200) in the process chamber (100). The moving device (400) is connected to the wafer position detection device (300) and can drive the wafer position detection device (300) to move into the process chamber (100) and out of the process chamber (100).
2. The etching apparatus according to claim 1, characterized in that, The wafer position detection device (300) includes an image acquisition component (301) which is capable of acquiring images within the process chamber (100).
3. The etching apparatus according to claim 2, characterized in that, The wafer position detection device (300) includes an illumination component (302) that can illuminate the process chamber (100).
4. The etching apparatus according to claim 3, characterized in that, The wafer position detection device (300) includes a receiving component (303), the inner cavity of which is isolated from the inner cavity of the process chamber (100). The image acquisition component (301) and the illumination component (302) are located inside the receiving component (303). At least part of the wall of the receiving component (303) is a transparent area. The image acquisition component (301) and the illumination component (302) can respectively perform image acquisition and illumination of the process chamber (100) through the transparent area.
5. The etching apparatus according to claim 4, characterized in that, The receiving component (303) includes a receiving tube (3031) and a shielding part (3032). The receiving tube (3031) includes a side wall (3031a) and an end wall (3031b). The side wall (3031a) is sealed to the first mounting hole (X). The end wall (3031b) is located at one end of the side wall (3031a) near the stage (200). The end wall (3031b) is provided with a through hole (Z). The shielding part (3032) shields the through hole (Z). At least a portion of the area of the shielding part (3032) corresponding to the through hole (Z) is a transparent area.
6. The etching apparatus according to claim 5, characterized in that, The shielding portion (3032) includes a seal (3032a) and a baffle (3032b). The baffle (3032b) is detachably connected to the side of the end wall (3031b) away from the inner cavity of the receiving tube (3031) and blocks the through hole (Z). The seal (3032a) is sealed to the side of the end wall (3031b) near the inner cavity of the receiving tube (3031) and blocks the through hole (Z). At least a portion of the area of the baffle (3032b) and the seal (3032a) corresponding to the through hole (Z) is a transparent area.
7. The etching apparatus according to any one of claims 1-6, characterized in that, The first mounting hole (X) is located on the top wall of the process chamber (100), and the moving device (400) can drive the wafer position detection device (300) to move up and down.
8. The etching apparatus according to any one of claims 1-6, characterized in that, The etching apparatus includes a rotating shielding device (500), which is rotatably mounted on the cavity wall of the process chamber (100). The rotating shielding device (500) can be rotated to a position that opens the first mounting hole (X) and a position that closes the first mounting hole (X).
9. The etching apparatus according to any one of claims 1-6, characterized in that, The wafer stage (200) is provided with a reference mark (A) for alignment with the positioning mark (B) on the wafer (01) to identify the reference position of the wafer (01), so that the deflection angle of the wafer (01) and the deflection direction of the wafer (01) can be calculated based on the relative position of the reference mark (A) and the positioning mark (B) on the image acquired by the wafer position detection device (300).
10. The etching apparatus according to any one of claims 1-6, characterized in that, The etching equipment includes a drive device that is connected to the stage (200) and can drive the stage (200) to rotate around its own central axis.