Temperature control heating circuit
The temperature control heating circuit, which controls the MOSFET by using a voltage divider module and a comparator, solves the problems of large space occupation and high cost of MCU and flash chips in the existing technology, and achieves stable and low-cost heating control in extreme environments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-11
- Publication Date
- 2026-04-07
AI Technical Summary
In existing temperature controller circuits, industrial-grade MCUs and flash chips are expensive and occupy a lot of PCB space, which increases product costs and makes it difficult to maintain stability in extreme climate environments.
The temperature control heating circuit uses a combination of first and second voltage divider modules, a temperature sensor, a comparator, and a MOSFET, eliminating the need for an industrial-grade MCU and flash chip. By controlling the MOSFET to turn on or off through the voltage divider value and the comparator, the heating module can be automatically started and stopped.
It reduces product material costs, ensures products function normally in extreme environments, improves stability and market competitiveness, and reduces unnecessary energy consumption and wear.
Smart Images
Figure CN224097861U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of heating circuit technology, and more specifically, to a temperature control heating circuit. Background Technology
[0002] In today's rapidly developing technological landscape, the upgrading and price competition of electronic communication products are becoming increasingly fierce, especially for outdoor network communication products where requirements are becoming more stringent. This places greater demands on product stability under temperature variations; some products fail to function or malfunction at temperatures around -40 degrees Celsius and below. Existing temperature controller circuits in these products typically employ a simple switch control, but in reality, this simplistic approach is insufficient to meet user requirements. Especially in extreme climates, the ability for products to operate normally is a basic necessity. Therefore, low-temperature control heaters are being designed and applied to these products.
[0003] like Figure 1 As shown, commercially available temperature control heating circuits often employ a temperature sensor with I / O control (T-sensor). The I / O control signal is connected to an industrial-grade MCU processor, and related control instructions are edited in the flash memory. Through software information, the MCU issues commands, and the sensor outputs high and low levels to control the MOSFET's conduction and cutoff, thus turning heating on or off. This achieves the heating of the product's core chip and raises the temperature of components in local circuits to a usable state. However, industrial-grade MCUs and flash memory are relatively expensive and occupy significant PCB space, often causing design challenges for engineers. Increased space requirements also lead to larger components, consequently increasing costs and ultimately hindering the manufacturer's price competitiveness. Utility Model Content
[0004] The technical problem to be solved by this utility model is to provide a temperature control heating circuit that addresses the above-mentioned deficiencies of the prior art.
[0005] The technical solution adopted by this utility model to solve its technical problem is: a temperature control heating circuit, comprising:
[0006] The first voltage divider module is used to output the first voltage divider value;
[0007] The second voltage divider module is used to output a second voltage divider value, wherein the first voltage divider value is less than the second voltage divider value;
[0008] A temperature sensor is used to detect ambient temperature. When the temperature is lower than a first preset temperature value, it outputs a first level signal lower than a first voltage divider value. When the temperature is higher than a second preset temperature value, it outputs a second level signal higher than a second voltage divider value. The first preset temperature value is lower than the second preset temperature value.
[0009] The first comparator is used to output a high-level signal when the first level signal output by the temperature sensor is lower than the first voltage divider value;
[0010] The second comparator is used to output a low-level signal when the second-level signal output by the temperature sensor is higher than the second voltage divider value;
[0011] Heating module, used to heat the CPU or local circuitry;
[0012] A MOS transistor has its gate connected to the first comparator and the second comparator. When the gate of the MOS transistor receives a high-level signal, the MOS transistor is in the on state and controls the heating module to start heating. When the gate of the MOS transistor receives a low-level signal, the MOS transistor is in the off state and controls the heating module to stop heating.
[0013] The temperature control heating circuit of this utility model includes a first voltage divider module comprising a first voltage divider resistor and a second voltage divider resistor electrically connected thereto; the voltage is passed through the first voltage divider resistor and the second voltage divider resistor to obtain the first voltage divider value.
[0014] The temperature control heating circuit of this utility model includes a second voltage divider module comprising a third voltage divider resistor and a fourth voltage divider resistor electrically connected thereto; the voltage is passed through the third voltage divider resistor and the fourth voltage divider resistor to obtain a second voltage divider value.
[0015] In the temperature control heating circuit of this utility model, the first voltage divider value is 300mV; the second voltage divider value is 500mV.
[0016] The temperature control heating circuit of this utility model has a first preset temperature value of -30℃ and a second preset temperature value of -10℃; the heating module starts below -30℃ and stops when the temperature rises above -10℃, forming a heating lag range of 20℃.
[0017] The temperature control heating circuit of this utility model includes a heating module comprising a heating resistor or a heating element.
[0018] In the temperature control heating circuit of this utility model, both the first comparator and the second comparator are inverting comparators, used to output a control signal based on the comparison result between the input level and the voltage divider value.
[0019] The temperature control heating circuit of this utility model further includes a fifth voltage divider resistor between the MOS transistor and the first comparator and the second comparator.
[0020] The temperature control heating circuit of this utility model further includes a filter capacitor connected to the MOS transistor to filter out noise interference in the circuit and prevent the MOS transistor from being falsely triggered due to noise interference.
[0021] The beneficial effects of this utility model are as follows: The temperature control heating circuit is ingeniously designed, eliminating the need for industrial-grade MCUs and flash chips. Through the cooperation of a first voltage divider module, a second voltage divider module, a temperature sensor, a first comparator, a second comparator, a heating module, and a MOSFET, when the ambient temperature is lower than the first preset temperature value, the first comparator U3 will output a high-level signal, and the MOSFET will control the heating module to start heating, preventing damage to the CPU or circuits due to excessively low temperatures. It can easily achieve low-temperature start-up of the heating module to heat the CPU and related circuits. Similarly, when the temperature is higher than the second preset temperature value, the second comparator U4 will output a low-level signal, and the MOSFET will control the heating module to stop heating, avoiding overheating damage and achieving a 20-degree heating lag, automatically shutting off heating after the CPU and other circuits are working normally. This solves the problem of the product working normally in harsh environments, ensuring product stability, reducing the product's material costs, and providing the enterprise with strong market competitiveness. Attached Figure Description
[0022] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the present invention will be further described below in conjunction with the accompanying drawings and embodiments. The drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0023] Figure 1 This is a circuit diagram of a temperature controller circuit in the background technology;
[0024] Figure 2 This is a circuit diagram of a temperature control heating circuit according to a preferred embodiment of the present invention. Detailed Implementation
[0025] The terms "first," "second," "third," and "fourth," etc., used in the specification, claims, and accompanying drawings of this invention are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.
[0026] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0027] "Multiple" refers to two or more. "And / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. The character " / " generally indicates that the preceding and following related objects have an "or" relationship.
[0028] Furthermore, the terms indicating orientation, such as "up, down, front, back, left, right, upper end, lower end, longitudinal," etc., are all based on the posture and position of the device or equipment described in this solution during normal use.
[0029] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, a clear and complete description will be provided below in conjunction with the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the protection scope of the present invention.
[0030] A preferred embodiment of the present invention provides a temperature control heating circuit, such as... Figure 2 As shown, it includes the following:
[0031] The first voltage divider module is used to output the first voltage divider value;
[0032] The second voltage divider module is used to output a second voltage divider value, where the first voltage divider value is less than the second voltage divider value.
[0033] Temperature sensor U2 is used to detect ambient temperature. When the temperature is lower than a first preset temperature value, it outputs a first level signal lower than a first voltage divider value. When the temperature is higher than a second preset temperature value, it outputs a second level signal higher than a second voltage divider value. The first preset temperature value is lower than the second preset temperature value.
[0034] The first comparator U3 is used to output a high-level signal when the first level signal output by the temperature sensor U2 is lower than the first voltage divider value;
[0035] The second comparator U4 is used to output a low-level signal when the second level signal output by the temperature sensor U2 is higher than the second voltage divider value.
[0036] Heating module, used to heat the CPU or local circuitry;
[0037] MOSFET Q2 has its gate connected to the first comparator U3 and the second comparator U4. When the gate of MOSFET Q2 receives a high-level signal, the MOSFET is in the on state and controls the heating module to start heating; when the gate of MOSFET Q2 receives a low-level signal, the MOSFET is in the off state and controls the heating module to stop heating. By controlling the on and off states of MOSFET Q2, the switching of the heating module can be effectively controlled, reducing unnecessary energy consumption and improving energy efficiency.
[0038] This temperature-controlled heating circuit is ingeniously designed, eliminating the need for industrial-grade MCUs and flash chips. Through the coordinated operation of a first voltage divider module, a second voltage divider module, a temperature sensor, a first comparator, a second comparator, a heating module, and a MOSFET, when the ambient temperature is below the first preset temperature value, the first comparator U3 outputs a high-level signal, and the MOSFET controls the heating module to start heating, preventing damage to the CPU or circuits due to excessively low temperatures. This easily achieves low-temperature start-up of the heating module to heat the CPU and related circuits. Similarly, when the temperature is above the second preset temperature value, the second comparator U4 outputs a low-level signal, and the MOSFET controls the heating module to stop heating, preventing overheating damage and automatically shutting off heating after a 20-degree lag, once the CPU and other circuits are functioning normally. This design ensures the product can operate normally in harsh environments, guarantees product stability, reduces material costs, and provides the company with strong market competitiveness.
[0039] In this embodiment, the first voltage divider module includes a first voltage divider resistor R3 and a second voltage divider resistor R4 electrically connected thereto; the voltage passes through the first voltage divider resistor R3 and the second voltage divider resistor R4 to obtain a first voltage divider value; the first voltage divider value is 300mV. The second voltage divider module includes a third voltage divider resistor R5 and a fourth voltage divider resistor R6 electrically connected thereto; the voltage passes through the third voltage divider resistor R5 and the fourth voltage divider resistor R6 to obtain a second voltage divider value; the second voltage divider value is 500mV. The two different voltage divider values allow for more precise adjustment of the temperature control range. For example, a lower temperature threshold (300mV) can be set to start heating to prevent the device from overcooling, while a higher temperature threshold (500mV) can be set to stop heating to prevent the device from overheating; and the existence of a certain interval between the two voltage divider values helps reduce frequent switching of the heating module due to temperature fluctuations, thereby improving system stability and reducing unnecessary wear.
[0040] In this embodiment, the first preset temperature is -30℃, and the second preset temperature is -10℃. The heating module starts below -30℃ and stops when the temperature rises above -10℃, forming a 20℃ heating hysteresis range. This heating hysteresis range helps maintain a relatively stable temperature environment, reducing the impact of temperature fluctuations on equipment performance. Furthermore, when ambient temperature changes significantly, the heating hysteresis range allows the system to better adapt to these changes, maintaining continuous equipment operation and enhancing product adaptability.
[0041] In this embodiment, the heating module includes a heating resistor or a heating element, which has a simple structure and low cost.
[0042] In this embodiment, both the first comparator U3 and the second comparator U4 are inverting comparators in the prior art, and their specific principles will not be elaborated here. They can output control signals based on the comparison result between the input level and the voltage divider value. Furthermore, a fifth voltage divider resistor is provided between the MOSFET Q2 and the first comparator U3 and the second comparator U4. The fifth voltage divider resistor can act as a buffer between the comparator output and the MOSFET gate, reducing the impact of circuit noise on the MOSFET control signal, thereby improving the stability of the entire circuit. Since the comparator is inverting, the fifth voltage divider resistor can help ensure that the MOSFET Q2 will not be falsely triggered when the comparison result between the input level and the voltage divider value is uncertain, that is, the heating module will not be started when heating is not needed, or the heating module will not be turned off when heating does not need to be stopped. In addition, the fifth voltage divider resistor can limit the current flowing into the gate of the MOSFET Q2, preventing excessive current from damaging the MOSFET.
[0043] Circuit noise may cause the MOSFET Q2 to change state at times when it should not be turned on or off. In this embodiment, the circuit also includes a filter capacitor connected to the MOSFET Q2 to filter out noise interference in the circuit and prevent the MOSFET Q2 from being falsely triggered due to circuit noise interference. This helps to maintain the stability of the gate voltage of the MOSFET Q2, thereby making the start-up and shutdown of the heating module smoother.
[0044] It should be understood that those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.
Claims
1. A temperature-controlled heating circuit, characterized in that, include: The first voltage divider module is used to output the first voltage divider value; The second voltage divider module is used to output a second voltage divider value, wherein the first voltage divider value is less than the second voltage divider value; A temperature sensor is used to detect ambient temperature. When the temperature is lower than a first preset temperature value, it outputs a first level signal lower than a first voltage divider value. When the temperature is higher than a second preset temperature value, it outputs a second level signal higher than a second voltage divider value. The first preset temperature value is lower than the second preset temperature value. The first comparator is used to output a high-level signal when the first level signal output by the temperature sensor is lower than the first voltage divider value; The second comparator is used to output a low-level signal when the second-level signal output by the temperature sensor is higher than the second voltage divider value; Heating module, used to heat the CPU or local circuitry; A MOS transistor has its gate connected to the first comparator and the second comparator. When the gate of the MOS transistor receives a high-level signal, the MOS transistor is in the on state and controls the heating module to start heating. When the gate of the MOS transistor receives a low-level signal, the MOS transistor is in the off state and controls the heating module to stop heating.
2. The temperature control heating circuit according to claim 1, characterized in that, The first voltage divider module includes a first voltage divider resistor and a second voltage divider resistor electrically connected thereto; the voltage is divided into a first voltage value after passing through the first voltage divider resistor and the second voltage divider resistor.
3. The temperature control heating circuit according to claim 2, characterized in that, The second voltage divider module includes a third voltage divider resistor and a fourth voltage divider resistor electrically connected thereto; the voltage is divided into a second voltage value after passing through the third and fourth voltage divider resistors.
4. The temperature control heating circuit according to any one of claims 1-3, characterized in that, The first voltage divider value is 300mV; the second voltage divider value is 500mV.
5. The temperature control heating circuit according to claim 4, characterized in that, The first preset temperature value is -30℃, and the second preset temperature value is -10℃; the heating module starts below -30℃ and stops when the temperature rises above -10℃, forming a heating lag range of 20℃.
6. The temperature control heating circuit according to claim 5, characterized in that, The heating module includes a heating resistor or a heating element.
7. The temperature control heating circuit according to any one of claims 1-3, 5 and 6, characterized in that, Both the first comparator and the second comparator are inverting comparators, used to output control signals based on the comparison result between the input level and the voltage divider value.
8. The temperature control heating circuit according to claim 1, characterized in that, A fifth voltage divider resistor is also provided between the MOS transistor and the first comparator and the second comparator.
9. The temperature control heating circuit according to claim 1, characterized in that, The circuit also includes a filter capacitor connected to the MOS transistor to filter out noise interference in the circuit and prevent the MOS transistor from being falsely triggered due to noise interference.