Power supply network structure, chip and electronic equipment

Abstract

The utility model provides a power network structure, a chip and electronic equipment, and relates to the technical field of chip design. The power network structure comprises a top metal layer, a bottom metal layer and K intermediate metal layers, the bottom metal layer comprises 2N first metal wires arranged along a first direction; the top metal layer comprises a power supply metal wire and a grounding metal wire, and the K middle metal layers comprise a first metal layer, a second metal layer and a third metal layer; the first metal layers and the second metal layers are sequentially overlapped, the middle metal layer closest to the bottom metal layer serves as a starting point, odd layers in the K middle metal layers serve as the first metal layers, even layers in the K middle metal layers serve as the second metal layers, and the layer closest to the top metal layer in the K middle metal layers serves as the third metal layer; the power supply metal wire is connected with the third metal layer through a through hole, and the grounding metal wire is connected with the third metal layer through a through hole; the power line and the ground line in the third metal layer and the bottom metal layer are connected through the first through hole tower and the second through hole tower respectively.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of chip design, in particular to a power network structure, a chip and an electronic device. BACKGROUND

[0002] With the process of integrated circuits entering the deep submicron stage, due to the reduction of process size, the further shortening of channel length, the fin field effect tube process has become the mainstream design below 14nm. This type of process often has the characteristics that the bottom device and metal wire process size are small, and the middle and upper metal layers use relatively large process size.

[0003] Under this process, the top metal layer and the bottom metal layer in the power network architecture usually adopt a grid design method. However, this method will cause the middle metal layer arranged between the top metal layer and the bottom metal layer to need to occupy more wire winding resources. CONTENT OF THE UTILITY MODEL

[0004] The present application provides a power network structure, a chip and an electronic device to reduce the wire winding resources needed by the middle metal layer.

[0005] In a first aspect, this application provides a power network structure, including: a top metal layer, a bottom metal layer, and a K-layer intermediate metal layer; the bottom metal layer includes multiple bottom metal layer patterns, each bottom metal layer pattern including 2N first metal lines arranged parallel to each other along a first direction, each first metal line being disposed on a winding track, with n winding tracks spaced between adjacent first metal lines; wherein, N of the 2N first metal lines are power lines, and the other N first metal lines are ground lines, and the N power lines are adjacent, and the N ground lines are adjacent; N and n are both positive integers; each first metal line and each pin occupies only one winding track; the top metal layer includes The top metal layer has power and ground metal lines, wherein the power and ground metal lines of the top metal layer are arranged parallel to each other along a second direction. The power metal lines are connected to N adjacent power lines in the bottom metal layer via a first through-hole tower, and the ground metal lines are connected to N adjacent ground lines in the bottom metal layer via a second through-hole tower. Each first and second through-hole tower includes through-holes in different layers whose projections on the bottom metal layer are located in the same area. The K-layer intermediate metal layer includes a first metal layer, a second metal layer, and a third metal layer. The first and second metal layers are sequentially overlapped, with the intermediate metal layer closest to the bottom metal layer being the one in the middle. Starting from the K-layer intermediate metal layer, the odd-numbered layers are the first metal layer, the even-numbered layers are the second metal layer, and the intermediate metal layer closest to the top metal layer in the K-layer intermediate metal layer is the third metal layer, where K is an even number; the first metal layer includes 2A second metal wires arranged parallel to the second direction; wherein, the projection of A second metal wires on the bottom metal layer covers the projection of at least one first through-hole tower on the bottom metal layer; the projections of the remaining A second metal wires on the bottom metal layer cover the projection of at least one second through-hole tower on the bottom metal layer; wherein, the first direction and the second direction are perpendicular; and the projection of a specified metal wire on the bottom metal layer covers the second metal wire. The projection of the third metal wire onto the bottom metal layer; wherein the designated metal wire is the power supply metal wire or the grounding metal wire; the second metal layer includes 2B third metal wires arranged parallel to the second direction; wherein the projection of B of the third metal wires onto the bottom metal layer covers the projection of at least one first through-hole tower onto the bottom metal layer; the projection of the remaining B of the third metal wires onto the bottom metal layer covers the projection of at least one second through-hole tower onto the bottom metal layer; the third metal layer includes N fourth metal wires and N fifth metal wires arranged parallel to the first direction; wherein the projection of the fourth metal wire onto the bottom metal layer covers the projection of at least one first through-hole tower onto the bottom metal layer;The projection of the fifth metal wire onto the bottom metal layer overlaps the projection of at least one second through-hole tower onto the bottom metal layer, and the projection of the fifth metal wire onto the bottom metal layer intersects with the projection of the grounding metal wire onto the bottom metal layer; the power metal wire is connected to the third metal layer through a through-hole, and the grounding metal wire is connected to the third metal layer through a through-hole; the power wire and ground wire in the third metal layer are connected to the bottom metal layer through the first through-hole tower and the second through-hole tower, respectively.

[0006] In practice, by setting a K-layer intermediate metal layer, and ensuring that the projections of the fourth and fifth metal lines on the bottom metal layer both cover the projections of at least one first through-hole tower / second through-hole tower on the bottom metal layer, the power metal line is connected to N adjacent power lines in the bottom metal layer through the first through-hole tower, and the ground metal line is connected to N adjacent ground lines in the bottom metal layer through the second through-hole tower. This reduces the number of lines required for connections between the top and bottom metal layers, thereby lowering resistance. Distributing power and ground through the K-layer intermediate metal layer reduces current density. Furthermore, since the projection of the designated metal line (power metal line or ground metal line) on the bottom metal layer covers the projection of the second metal line on the bottom metal layer, the second metal line only needs to occupy the same number of winding resources as the designated metal line, thus saving winding resources in other locations in the first metal layer.

[0007] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the position of the projection area corresponding to the first through-hole tower is: the position where the projection of the second metal line in the first metal layer on the bottom metal layer overlaps with the power line of the bottom metal layer.

[0008] In practice, since the first through-hole tower is located at the overlapping position of the projection of the second metal line in the first metal layer onto the bottom metal layer and the power line of the bottom metal layer, the first through-hole tower can connect with the metal lines in each first metal layer and each second metal layer, thereby connecting all intermediate metal layers as well as the top metal layer and the bottom metal layer, achieving the effect of connecting the power metal lines of the top metal layer and the power lines of the bottom metal layer through the first through-hole tower.

[0009] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the position of the projection area corresponding to the second through-hole tower is: the position where the projection of the second metal line in the first metal layer on the bottom metal layer overlaps with the ground line of the bottom metal layer.

[0010] In practice, since the second through-hole tower is located at the overlapping position of the projection of the second metal wire in the first metal layer onto the bottom metal layer and the ground wire of the bottom metal layer, the second through-hole tower can connect with the metal wires in each first metal layer and each second metal layer, thereby connecting all intermediate metal layers as well as the top metal layer and the bottom metal layer, achieving the effect of connecting the grounding metal wire of the top metal layer and the ground wire of the bottom metal layer through the second through-hole tower.

[0011] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the interval between two adjacent first through-hole towers or two adjacent second through-hole towers on each of the first metal lines is 4 standard unit single heights.

[0012] In practice, through actual testing, this application demonstrates that when the interval between two adjacent first through-hole towers or two adjacent second through-hole towers on the first metal line is one time the height of four standard units, the maximum possible through-hole density can be achieved without violating design rules, thereby achieving the maximum possible power transmission efficiency.

[0013] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the width of the metal lines in the intermediate metal layer is the minimum width limited by the manufacturing process of the intermediate metal layer.

[0014] In practice, by setting the width of the metal wire in the intermediate metal to the minimum width limited by the manufacturing process, the winding resources of the intermediate metal layer can be saved.

[0015] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the projection of the fourth metal wire on the bottom metal layer covers the projection of at least one of the first through-hole towers on the bottom metal layer; the projection of the fifth metal wire on the bottom metal layer covers the projection of at least one of the second through-hole towers on the bottom metal layer, and the projection of the fifth metal wire on the bottom metal layer intersects with the projection of the grounding metal wire on the bottom metal layer.

[0016] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the projection of the fourth metal wire on the bottom metal layer covers the projection of at least one of the first through-hole towers on the bottom metal layer, and the projection of the fourth metal wire on the bottom metal layer intersects with the projection of the power supply metal wire on the bottom metal layer; the projection of the fifth metal wire on the bottom metal layer covers the projection of at least one of the second through-hole towers on the bottom metal layer.

[0017] In conjunction with the technical solution provided in the first aspect above, in some possible implementations, the field-effect transistors included in the standard cells of the chip using the power network structure are finned field-effect transistors.

[0018] Secondly, this application provides a chip comprising: the power network structure described in the first aspect and / or in combination with any possible implementation of the first aspect.

[0019] Thirdly, this application provides an electronic device, including: the chip described in the second aspect above; or, including the power network structure described in the second aspect above. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a cross-sectional schematic diagram of the first power network structure shown in the embodiments of this application;

[0022] Figure 2 This is a schematic diagram showing the positional structure of the first metal layer and the bottom metal layer in an embodiment of this application;

[0023] Figure 3 This is a cross-sectional schematic diagram of the second power network structure shown in the embodiments of this application;

[0024] Figure 4 This is a cross-sectional schematic diagram of the third power network structure shown in the embodiments of this application;

[0025] Figure 5 This is a cross-sectional schematic diagram of the fourth power network structure shown in the embodiments of this application;

[0026] Figure 6 This is a schematic diagram showing the positional structure of the second type of first metal layer and bottom metal in an embodiment of this application;

[0027] Figure 7 This is a schematic diagram showing the positional structure of the first metal layer and the top metal layer in the embodiments of this application;

[0028] Figure 8 This is a schematic diagram illustrating the positional structure of the second type of first metal layer and top metal layer in an embodiment of this application;

[0029] Figure 9This is a schematic diagram illustrating the positional structure of a second metal layer and a top metal layer according to an embodiment of this application;

[0030] Figure 10 This is a schematic diagram illustrating the positional structure of a third metal layer and a top metal layer according to an embodiment of this application.

[0031] Reference numerals: 110 - First metal wire; 210 - Power supply metal wire; 220 - Grounding metal wire; 310 - First through-hole tower; 320 - Second through-hole tower; 510 - Second metal wire; 610 - Third metal wire; 710 - Fourth metal wire; 720 - Fifth metal wire. Detailed Implementation

[0032] The terms “first,” “second,” “third,” “fourth,” etc., are used only for distinguishing descriptions and do not indicate a sequence number, nor should they be interpreted as indicating or implying relative importance.

[0033] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0034] In the description of this application, it should be noted that the terms "inner", "outer", "left", "right", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0035] In the description of this application, unless otherwise expressly specified and limited, the terms "set" and "connection" shall be interpreted broadly, for example, as a fixed connection, a detachable connection, or an integral connection; as a mechanical connection or an electrical connection; as a direct connection or an indirect connection through an intermediate medium; or as a connection within two components.

[0036] The technical solution of this application will now be described in detail with reference to the accompanying drawings.

[0037] Please see Figure 1 , Figure 1 This is a schematic diagram of a power network structure shown in an embodiment of this application.

[0038] like Figure 1 As shown, the power network structure includes a top metal layer ( Figure 1The middle metal layer consists of a power supply metal line 210 and a grounding metal line 220, and the bottom metal layer ( Figure 1 (The metal layer consisting of the first metal line 110).

[0039] The bottom metal layer includes 2N first metal lines 110 arranged parallel to each other along a first direction. Each first metal line 110 is disposed on a winding track (also known as a wiring track), with n winding tracks spaced between adjacent first metal lines 110. The bottom metal layer is positioned close to the standard cell. For ease of understanding, [the following is a simplified explanation]. Figure 2 Let's take an example to illustrate how the first metal wire is set up.

[0040] Optionally, when this power network structure is applied within a chip, the bottom metal layer can be the same metal layer as the signal pin layer of the standard cell within the chip. By setting a spacing of n winding tracks between two adjacent first metal lines in the bottom metal layer, the conflict between the density requirements of the bottom metal layer and the pins and internal interconnections of the standard fin field-effect transistor cell can be reduced.

[0041] Among them, N of the 2N first metal wires 110 are power lines, and the other N first metal wires are ground wires. The N power lines are adjacent to each other, and the N ground wires are adjacent to each other. N and n are both positive integers.

[0042] Optionally, the first metal wires in the bottom metal layer may not be uniformly distributed, that is, the number of winding tracks between two different adjacent first metal wires may be different (i.e., the value of n may be different).

[0043] Optionally, n can be selected based on the specific power consumption of the chip. For example, a chip with lower power consumption can improve its performance and save wiring resources in the underlying metal layer by increasing the value of n to make the first metal line 110 in the underlying metal layer more sparse.

[0044] In one implementation, n=1, and in this implementation, there are 5 winding tracks between each two adjacent first metal wires in the bottom metal layer.

[0045] Because the bottom and top metal layers require etching and other operations to create metal lines and other structures during manufacturing, the top and bottom metal layers... Figure 1 The representation is achieved through the first metal line 110, the power supply metal line 210, and the grounding metal line 220.

[0046] It is understandable that there must be an insulating layer between different metal layers to separate them.

[0047] In chip design, a routing track refers to a path used to constrain the direction of traces on a tracer, ensuring that signal lines follow a predetermined path and avoiding the chaos and inefficiency caused by haphazard routing. Furthermore, predefined tracks allow designers to complete routing more quickly, reducing design time and ensuring orderly and efficient interconnections. A well-designed track system also reduces wasted routing resources, improving the overall performance and reliability of the chip.

[0048] The definition of a Track can include the following attributes: routing direction (e.g., vertical or horizontal), spacing (the distance between each track), offset (the distance the first track is from the starting point), maximum width (the maximum width of the wires on this layer), and default width.

[0049] The specific setup and implementation principle of the winding track are well known to those skilled in the art, and will not be elaborated here for the sake of brevity.

[0050] Optionally, the metal material of the bottom metal layer can be set according to actual needs, such as copper, aluminum, tungsten, titanium, etc. The metal material of the bottom metal layer is not limited to the metal types exemplified here.

[0051] Optionally, the specific direction of the first direction can be set according to actual needs; there is no restriction on the specific direction of the first direction here.

[0052] A standard cell specifically refers to a basic functional unit within a chip, composed of MOSFETs, such as AND gates, OR gates, and NOT gates. Within the chip, an insulating layer is typically placed on top of the standard cell, and a power network structure is then placed on this insulating layer. Vias are then created in the insulating layer between the power network structure and the standard cell to provide power to the standard cell.

[0053] Optionally, the metal lines of the pin metal layer closest to the bottom metal layer of the standard cell are arranged parallel to the second direction, wherein the first direction and the second direction are perpendicular.

[0054] A standard cell typically consists of a substrate, a doped layer, and multiple metal layers, with the topmost metal layer of the standard cell being the pin metal layer. The pin metal layer is usually an internal metal layer within the chip used for signal transmission and local power distribution.

[0055] The top metal layer includes a power metal line 210 and a ground metal line 220. The power metal line 210 is connected to the N adjacent power lines in the bottom metal layer through a first through-hole tower 310, and the ground metal line 220 is connected to the N adjacent ground lines in the bottom metal layer through a second through-hole tower 320.

[0056] Each first through-hole tower 310 and each second through-hole tower 320 includes: through-holes in different layers whose projections in the bottom metal layer are located in the same area.

[0057] Optionally, both the power metal line 210 and the ground metal line 220 may be one, that is, the top metal layer may include one power metal line 210 and one ground metal line 220.

[0058] Alternatively, both the power supply metal line 210 and the ground metal line 220 can include multiple lines, meaning the top metal layer can include multiple power supply metal lines 210 and multiple ground metal lines 220. However, the projection of the multiple power supply metal lines 210 onto the bottom metal layer needs to cover N power lines of the bottom metal layer, and the projection of the multiple ground metal lines 220 onto the bottom metal layer needs to cover N ground lines of the bottom metal layer.

[0059] Optionally, the metal material of the top metal layer can be set according to actual needs, such as copper, aluminum, tungsten, titanium, etc. The metal material of the top metal layer is not limited to the metal types exemplified here.

[0060] Optionally, there may be multiple first through-hole towers 310 and multiple second through-hole towers 320. By setting multiple first through-hole towers 310 and multiple second through-hole towers 320, the current density and resistance can be reduced.

[0061] Optionally, the interval between two adjacent first through-hole towers 310 or two adjacent second through-hole towers 320 on each first metal wire 110 is 4 standard unit heights.

[0062] Specifically, if a first through-hole tower 310 is provided on the first metal line 110, the interval between two adjacent first through-hole towers 310 on the first metal line 110 is 4 standard unit heights. If a second through-hole tower 320 is provided on the first metal line 110, the interval between two adjacent second through-hole towers 320 on the first metal line 110 is 4 standard unit heights.

[0063] The standard cell single height is defined as follows: the height of a cell in the standard cell library is an integer multiple of the basic height, and is usually a single height.

[0064] To facilitate understanding of through-hole towers, the following will combine... Figure 1 and Figure 3 Please provide an explanation.

[0065] like Figure 1As shown, the first metal wire 110 and the second metal wire 510 are connected by through holes, the second metal wire 510 and the third metal wire 610 are connected by through holes, and the third metal wire 610 and the fifth metal wire 720 are connected by through holes. The projections of these through holes onto the bottom metal layer may lie within the same projection area. That is, all through holes whose projections lie within the same projection area collectively constitute a second through-hole tower 320.

[0066] like Figure 3 As shown, the first metal wire 110 and the second metal wire 510 are connected by through holes, the second metal wire 510 and the third metal wire 610 are connected by through holes, and the third metal wire 610 and the fourth metal wire 710 are connected by through holes. The projections of these through holes onto the bottom metal layer may lie within the same projection area. That is, all through holes whose projections lie within the same projection area collectively constitute a first through-hole tower 310.

[0067] In this case, multiple vias can exist in the same layer, and their projections onto the underlying metal layer lie within the same projection area. That is... Figure 1 and Figure 3 A through-hole used to connect two different layers of metal wires can be composed of multiple small through-holes.

[0068] The power supply metal line 210 and the ground metal line 220 of the top metal layer are arranged parallel to each other along the second direction. The intermediate metal layer of layer K includes a first metal layer, a second metal layer, and a third metal layer.

[0069] The first metal layer and the second metal layer are arranged in an overlapping manner. Starting from the middle metal layer closest to the bottom metal layer, the odd-numbered layers in the middle metal layers of layer K are the first metal layer, the even-numbered layers are the second metal layer, and the middle metal layer closest to the top metal layer in the middle metal layers of layer K is the third metal layer, where K is an even number.

[0070] To facilitate understanding of the arrangement of the first, second, and third metal layers, we will use K=6 as an example. In this case, the first of the six intermediate metal layers is the first metal layer, the second is the second metal layer, the third is the first metal layer, the fourth is the second metal layer, the fifth is the first metal layer, and the sixth is the third metal layer. This example is for illustrative purposes only and should not be construed as limiting the scope of this application.

[0071] The first metal layer includes 2A second metal wires 510 arranged parallel to the second direction; wherein the projection of A second metal wires 510 on the bottom metal layer covers the projection of at least one first through-hole tower 310 on the bottom metal layer; the projection of A second metal wires 510 on the bottom metal layer covers the projection of at least one second through-hole tower 320 on the bottom metal layer; wherein the first direction and the second direction are perpendicular; and the projection of the power metal wire 210 on the bottom metal layer covers the projection of the second metal wire 510 on the bottom metal layer (or, the projection of the ground metal wire 220 on the bottom metal layer covers the projection of the second metal wire 510 on the bottom metal layer).

[0072] The second metal layer includes 2B third metal lines 610 arranged parallel to the second direction; wherein the projection of the B third metal lines 610 on the bottom metal layer covers the projection of at least one first through-hole tower 310 on the bottom metal layer; and the projection of the B third metal lines 610 on the bottom metal layer covers the projection of at least one second through-hole tower 320 on the bottom metal layer.

[0073] The third metal layer includes 2N fourth metal lines 710 arranged parallel to the first direction; wherein, the projections of the N fourth metal lines 710 on the bottom metal layer overlap with the N power lines, and the projections of the N fourth metal lines 710 on the bottom metal layer coincide with the N ground lines.

[0074] One implementation of the third metal layer is as follows: the projection of the fourth metal line 710 on the bottom metal layer overlaps the projection of at least one first through-hole tower 310 on the bottom metal layer; the projection of the fifth metal line 720 on the bottom metal layer overlaps the projection of at least one second through-hole tower 320 on the bottom metal layer, and the projection of the fifth metal line 720 on the bottom metal layer intersects with the projection of the grounding metal line 220 on the bottom metal layer. In this implementation, the projection of the power supply metal line 210 on the bottom metal layer overlaps the projection of the second metal line 510 on the bottom metal layer. Figure 1 , Figure 3 As shown.

[0075] A second implementation of the third metal layer is as follows: the projection of the fourth metal line 710 on the bottom metal layer covers the projection of at least one first through-hole tower 310 on the bottom metal layer, and the projection of the fourth metal line 710 on the bottom metal layer intersects with the projection of the power supply metal line 210 on the bottom metal layer; the projection of the fifth metal line 720 on the bottom metal layer covers the projection of at least one second through-hole tower 320 on the bottom metal layer. In this implementation, the projection of the grounding metal line 220 on the bottom metal layer covers the projection of the second metal line 510 on the bottom metal layer. Figure 4 , Figure 5 As shown.

[0076] The power metal wire 210 is connected to the third metal layer through a through-hole, and the ground metal wire 220 is connected to the third metal layer through a through-hole; the power wire and ground wire in the third metal layer are connected to the bottom metal layer through the first through-hole tower 310 and the second through-hole tower 320, respectively.

[0077] To facilitate understanding of the relationship between the intermediate metal layer, the bottom metal layer, and the top metal layer in the second implementation of the K-layer intermediate metal layer, we will use K=4 and N=2 as an example below.

[0078] The relationship between the first metal layer and the top metal layer is as follows: Figure 6 As shown, the second metal line 510 in the first metal layer used to connect the power metal line 210 is marked with VDD, and the second metal line 510 in the first metal layer used to connect the ground metal line 220 is marked with VSS. The second metal line 510 in each first metal layer overlaps with the projection of the power metal line 210 in the bottom metal layer.

[0079] The relationship between the first metal layer and the bottom metal layer is as follows: Figure 7 As shown, the projections of the second metal wire 510, used for connecting the power supply metal wire 210 in the first metal layer, intersect with the two power supply wires in the bottom metal layer. The area of ​​intersection is the location of the first through-hole tower 310 (i.e., Figure 7 As shown in c). The projection of the second metal wire 510, which is used to connect the grounding metal wire 220 in the first metal layer, intersects with the two ground wires in the bottom metal layer. The area of ​​intersection is the location of the second through-hole tower 320 (i.e. Figure 7 (b) shown.

[0080] First metal layer Figure 6 Besides the method, it can also be like... Figure 8 As shown. Figure 8 As shown, a portion of the second metal line 510 in the first metal layer may be connected to only one through-hole tower ( Figure 8 The second metal wire 510 is connected to either the first through-hole tower 310 or the second through-hole tower 320. However, the same second metal wire 510 will only be connected to either the first through-hole tower 310 or only to the second through-hole tower 320.

[0081] The relationship between the second metal layer and the top metal layer is as follows: Figure 9 As shown, in the second metal layer, the projection of the third metal line 610 on the projection of the first through-hole tower 310 on the bottom metal layer connects to the first metal layer at point c. In the second metal layer, the projection of the third metal line 610 on the projection of the second through-hole tower 320 on the bottom metal layer connects to the first metal layer at point b.

[0082] The relationship between the third metal layer and the top metal layer is as follows:Figure 10 As shown, the via connecting the fourth metal line 710 in the third metal layer to the power metal line 210 is at point c, and the via connecting the fourth metal line 710 to the first metal layer is also at point c. The via connecting the fifth metal line 720 in the third metal layer to the ground metal line 220 is at point a, and the via connecting the fifth metal line 720 to the first metal layer is at point b. It is obvious that both b and c are located within the projection area of ​​the power metal line 210.

[0083] The examples provided here are for illustrative purposes only, and the values ​​of N and K are not limited to those shown in this example.

[0084] In one embodiment, the width of the metal wire in the intermediate metal layer is the minimum width limited by the manufacturing process of the intermediate metal layer.

[0085] By setting the width of the metal wires in the intermediate metal layer to the minimum width limited by the manufacturing process of the intermediate metal layer, the winding resources of the intermediate metal layer can be saved. However, the width of the metal wires in the intermediate metal layer needs to cover the vias and meet the design rule checks.

[0086] In one embodiment, the difference in the total area of ​​the vias (including the first via tower 310 and the second via tower 320) in each intermediate metal layer is less than a preset area threshold to reduce the introduction of additional resistance.

[0087] The preset area threshold can be set according to actual needs, and its specific value is not limited here.

[0088] In one implementation, the field-effect transistor included in the standard cell is a finned field-effect transistor.

[0089] The specific implementation and structure of finned field-effect transistors are well known to those skilled in the art, and will not be elaborated here for the sake of brevity.

[0090] Optionally, since the field-effect transistors included in the standard cell are fin field-effect transistors, the bottom metal layer should maintain the same origin (i.e., same color split) when performing photomask splitting.

[0091] In one implementation, this power network structure can be applied to chips manufactured using 7nm or smaller process technologies.

[0092] Based on the same technical concept, this application also provides a chip that includes the aforementioned power network structure.

[0093] The chip can be any type of chip that requires a power network structure, such as various power management chips, processor chips, etc. There are no restrictions on its specific type here.

[0094] Based on the same technical concept, this application also provides a power network structure, which includes a top metal layer and a bottom metal layer.

[0095] The bottom metal layer includes multiple bottom metal layer patterns. Each bottom metal layer pattern includes 2N first metal wires arranged parallel to each other along a first direction. Each first metal wire is arranged on a winding track, and there are 5 winding tracks between two adjacent first metal wires. Among the 2N first metal wires, N first metal wires are power lines, and the other N first metal wires are ground lines. The N power lines are adjacent, and the N ground lines are adjacent. N is a positive integer.

[0096] The top metal layer includes a power metal line and a ground metal line. The power metal line is connected to the N adjacent power lines in the bottom metal layer through a first through-hole tower, and the ground metal line is connected to the N adjacent ground lines in the bottom metal layer through a second through-hole tower 320.

[0097] Each first through-hole tower 310 and each second through-hole tower 320 includes: through-holes in different layers whose projections in the bottom metal layer are located in the same area.

[0098] The remaining implementations of this power network structure are consistent with those described above. For the sake of brevity, details not described here can be found in the aforementioned power network structure. Further elaboration is omitted here.

[0099] Based on the same technical concept, this application also provides an electronic device, which includes the aforementioned chip, that is, a chip including the aforementioned power network structure.

[0100] The electronic device can be, for example, a computer, a mobile phone, a car, or an engineering device with a control chip, and the specific type of electronic device is not limited to the types exemplified here.

[0101] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A power network structure, characterized in that, include: Top metal layer, bottom metal layer, K layer, intermediate metal layer; The bottom metal layer includes multiple bottom metal layer patterns, each bottom metal layer pattern including 2N first metal wires arranged parallel to a first direction, each first metal wire being disposed on a winding track, with n winding tracks spaced between adjacent first metal wires; wherein, N of the 2N first metal wires are power lines, and the other N first metal wires are ground lines, and the N power lines are adjacent, and the N ground lines are adjacent; N and n are both positive integers; The top metal layer includes a power metal line and a ground metal line, wherein the power metal line and the ground metal line of the top metal layer are arranged parallel to each other along a second direction, the power metal line is connected to N adjacent power lines in the bottom metal layer through a first through-hole tower, and the ground metal line is connected to N adjacent ground lines in the bottom metal layer through a second through-hole tower; each first through-hole tower and each second through-hole tower includes: through-holes in different layers whose projections in the bottom metal layer are located in the same area; The K-layer intermediate metal layer includes a first metal layer, a second metal layer, and a third metal layer; wherein, the first metal layer and the second metal layer are arranged in an overlapping manner, with the intermediate metal layer closest to the bottom metal layer as the starting point, the odd-numbered layers in the K-layer intermediate metal layer are the first metal layer, the even-numbered layers are the second metal layer, and the intermediate metal layer closest to the top metal layer in the K-layer intermediate metal layer is the third metal layer, where K is an even number; The first metal layer includes 2A second metal wires arranged parallel to a second direction; wherein the projection of A second metal wires on the bottom metal layer covers the projection of at least one first through-hole tower on the bottom metal layer; the projections of the remaining A second metal wires on the bottom metal layer cover the projection of at least one second through-hole tower on the bottom metal layer; wherein the first direction and the second direction are perpendicular; and the projection of a designated metal wire on the bottom metal layer covers the projection of the second metal wires on the bottom metal layer; wherein the designated metal wire is the power supply metal wire or the grounding metal wire. The second metal layer includes 2B third metal wires arranged parallel to the second direction; wherein the projection of B of the third metal wires on the bottom metal layer covers the projection of at least one first through-hole tower on the bottom metal layer; and the projection of the remaining B of the third metal wires on the bottom metal layer covers the projection of at least one second through-hole tower on the bottom metal layer. The third metal layer includes N fourth metal wires and N fifth metal wires arranged parallel to a first direction; wherein, the projection of the fourth metal wires on the bottom metal layer covers the projection of at least one first through-hole tower on the bottom metal layer; the projection of the fifth metal wires on the bottom metal layer covers the projection of at least one second through-hole tower on the bottom metal layer, and the projection of the fifth metal wires on the bottom metal layer intersects with the projection of the grounding metal wire on the bottom metal layer. The power supply metal wire is connected to the third metal layer through a through-hole, and the grounding metal wire is connected to the third metal layer through a through-hole; the third metal layer is connected to the power supply wire and ground wire in the bottom metal layer through a first through-hole tower and a second through-hole tower, respectively.

2. The power network structure according to claim 1, characterized in that, The location of the projection area corresponding to the first through-hole tower is: the overlapping position of the projection of the second metal line in the first metal layer onto the bottom metal layer and the power line of the bottom metal layer.

3. The power network structure according to claim 1, characterized in that, The location of the projection area corresponding to the second through-hole tower is: the position where the projection of the second metal line in the first metal layer on the bottom metal layer overlaps with the ground line of the bottom metal layer.

4. The power network structure according to claim 1, characterized in that, The interval between two adjacent first through-hole towers or two adjacent second through-hole towers on each of the first metal lines is 4 standard unit heights.

5. The power network structure according to claim 1, characterized in that, The width of the metal lines in the intermediate metal layer is the minimum width limited by the manufacturing process of the intermediate metal layer.

6. The power network structure according to claim 1, characterized in that, The projection of the fourth metal wire onto the bottom metal layer covers at least one projection of the first through-hole tower onto the bottom metal layer. The projection of the fifth metal wire on the bottom metal layer overlaps the projection of at least one of the second through-hole towers on the bottom metal layer, and the projection of the fifth metal wire on the bottom metal layer intersects with the projection of the grounding metal wire on the bottom metal layer.

7. The power network structure according to claim 1, characterized in that, The projection of the fourth metal wire on the bottom metal layer covers at least one projection of the first through-hole tower on the bottom metal layer, and the projection of the fourth metal wire on the bottom metal layer intersects with the projection of the power supply metal wire on the bottom metal layer. The projection of the fifth metal wire onto the bottom metal layer overlaps the projection of at least one of the second through-hole towers onto the bottom metal layer.

8. The power network structure according to any one of claims 1-7, characterized in that, The standard cells in the chip using the aforementioned power network structure include finned field-effect transistors.

9. A chip, characterized in that, include: The power network structure as described in any one of claims 1-8.

10. An electronic device, characterized in that, include: The chip as described in claim 9.

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