Heating device for silicon carbide epitaxy

Abstract

The heating device comprises a bottom frame, a heating ring and an upper frame, the upper end of the upper frame is fixedly connected with a telescopic pipe, the upper end of the telescopic pipe is fixedly connected with a mixing cylinder, one side of the upper end of the mixing cylinder is fixedly connected with a carbon source pipe, and the other side of the upper end of the mixing cylinder is fixedly connected with a nitrogen source pipe; the bottom end of the bottom frame is fixedly connected with a gas guide frame, the bottom side of the gas guide frame is connected with a molecular sieve in an inserted mode, the bottom end of the molecular sieve is fixedly connected with a baffle, one side of the gas guide frame is fixedly connected with a flow guide pipe, the flow guide pipe is communicated with a mixing cylinder, and one side of the mixing cylinder is fixedly connected with a gas pump. And the water body is filled in the concentric-square-shaped pipe to absorb the hot air of the exported air flow, and the hot air is conducted into the mixing cylinder to mix and preheat the carbon source gas and nitrogen entering the mixing cylinder, so that the heating efficiency and speed of silicon carbide are improved, and the production cost is reduced.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide epitaxy technology, and more specifically to a heating device for silicon carbide epitaxy. Background Technology

[0002] Silicon carbide epitaxy refers to the process of growing a higher quality single-crystal thin film on a silicon carbide substrate that matches the substrate's crystal lattice structure. Silicon carbide epitaxy can usually improve material quality, precisely control doping and thickness, and meet different application requirements.

[0003] According to Chinese Patent Publication No. CN210765582U, "Heating Device for Silicon Carbide Epitaxy," the main improvement described is that by modifying the coil structure, the uniformity of the temperature field is increased while ensuring the heating speed, thereby improving the quality of silicon carbide epitaxy. The coil in this invention is hollow, with cooling water flowing through it. Cooling water can also flow through the gap between the inner and outer layers of the quartz protective cover for cooling the entire electromagnetic induction coil, ensuring the reliability of the heating coil under continuous high temperature and enhancing its service life.

[0004] Common heating devices used for silicon carbide epitaxy typically include radio frequency heaters, electromagnetic induction coil heaters, and resistance heaters. In actual use, the source gas needs to be preheated before entering the growth chamber, and it also needs to be heated after entering the growth chamber. This process consumes a lot of thermal energy, making it overly dependent on external energy sources and increasing production costs.

[0005] Therefore, a heating device for silicon carbide epitaxy is proposed to address the issue that heating the source gas requires energy consumption, which occurs in both the mixing and growth chambers, increasing production costs. Utility Model Content

[0006] The technical problem this invention aims to solve is that heating the source gas requires the consumption of thermal energy, which occurs in both the mixing chamber and the growth chamber, increasing production costs. Therefore, a heating device for silicon carbide epitaxy is proposed.

[0007] The technical solution adopted by this utility model to solve the technical problem is: a heating device for silicon carbide epitaxy, comprising a bottom frame, a heating ring, and an upper frame. A telescopic tube is fixedly connected to the upper end of the upper frame, and a mixing cylinder is fixedly connected to the upper end of the telescopic tube. A carbon source tube is fixedly connected to one side of the upper end of the mixing cylinder, and a nitrogen source tube is fixedly connected to the other side of the upper end of the mixing cylinder. Gas outlet holes are evenly distributed at the bottom end of the bottom frame, and a gas guide frame is fixedly connected to the bottom end of the bottom frame. A molecular sieve is inserted into the bottom side of the gas guide frame, and a baffle is fixedly connected to the bottom end of the molecular sieve. A gas guide frame is fixedly connected to one side of the gas guide frame. The device includes a guide pipe that communicates with a mixing cylinder. An air pump is fixedly connected to one side of the mixing cylinder, and the output end of the air pump is connected to the guide pipe. U-shaped tubes are evenly inserted into the air guide frame, and an insulation frame is provided on the outside of the U-shaped tubes. The two ends of the insulation frame are fixedly connected to the mixing cylinder and the air guide frame, respectively. The U-shaped tubes are filled with water, and one side of the U-shaped tubes is located inside the mixing cylinder. Baffle rings are fixedly connected to both the upper and lower sides of the mixing cylinder. An air guide hood is fixedly connected inside the mixing cylinder, and a bracket is fixedly connected to the bottom side of the air guide hood, with a fan rotatably connected inside the bracket.

[0008] As a preferred technical solution of this utility model, a support rod is fixedly connected inside the mixing cylinder, and a flow divider is fixedly connected to the support rod. By setting the flow divider, the airflow can be further divided, thereby promoting the mixing of the subsequent carbon source gas and carrier gas and improving the pyrolysis effect.

[0009] As a preferred technical solution of this utility model, the flow divider has a conical structure, and a turbulence ring is uniformly fixedly connected to the upper end of the flow divider. By setting the turbulence ring, the turbulence is increased and the airflow mixing effect is improved.

[0010] As a preferred technical solution of this utility model, a SIC gas sensor is fixedly connected to one side of the gas guide frame. The SIC gas sensor is located between the gas guide frame and the flow guide tube. By setting the SIC gas sensor, the gas components located behind the molecular sieve can be detected.

[0011] As a preferred technical solution of this utility model, a gas flow sensor is fixedly connected to both the guide pipe and the nitrogen source pipe. The gas flow sensor is a thermal gas mass flow meter. By setting the flow meter, nitrogen can be adjusted.

[0012] This invention has the following advantages: by uniformly arranging the spiral tubes on the bottom side of the heating ring and inside the air guide frame, and filling the spiral tubes with water to absorb the heat of the exhaust gas, and conducting it to the mixing cylinder, the carbon source gas and nitrogen entering the mixing cylinder are mixed and preheated, thereby improving the heating efficiency and speed of silicon carbide and reducing production costs. Attached Figure Description

[0013] Figure 1This is a side cross-sectional view of a heating device for silicon carbide epitaxy according to a preferred embodiment of the present invention.

[0014] Figure 2 This is a three-dimensional structural schematic diagram of a heating device for silicon carbide epitaxy according to a preferred embodiment of the present invention;

[0015] Figure 3 This is a three-dimensional structural diagram of the shroud of the heating device for silicon carbide epitaxy according to a preferred embodiment of the present invention.

[0016] Explanation of reference numerals in the attached diagram: 1. Base frame; 2. Heating ring; 3. Top frame; 4. Telescopic tube; 5. Mixing cylinder; 6. Carbon source tube; 7. Nitrogen source tube; 8. Gas guide frame; 9. Molecular sieve; 10. Flow guide tube; 11. Air pump; 12. U-shaped tube; 13. Gas guide hood; 14. Fan; 15. Flow divider; 16. Fluidized ring; 17. SiC gas sensor; 18. Insulation frame; 19. Baffle ring. Detailed Implementation

[0017] The present invention will be further described below with reference to the accompanying drawings.

[0018] Please refer to the following: Figure 1-3The heating device shown for silicon carbide epitaxy includes a base frame 1, a heating ring 2, and an upper frame 3. A telescopic tube 4 is fixedly connected to the upper end of the upper frame 3, and a mixing cylinder 5 is fixedly connected to the upper end of the telescopic tube 4. A carbon source tube 6 is fixedly connected to one side of the upper end of the mixing cylinder 5. Gas from the carbon source tube 6 and nitrogen source tube 7 enters the mixing cylinder 5 and, upon contact with the U-shaped tube 12, undergoes collision and dispersion. Combined with the baffle ring 19, this disperses the airflow. A nitrogen source tube 7 is fixedly connected to the other side of the upper end of the mixing cylinder 5. Gas outlet holes are evenly distributed at the bottom of the base frame 1. A gas guide frame 8 is fixedly connected to the bottom of the base frame 1. A molecular sieve 9 (carbon molecular sieve 9) is inserted into the bottom side of the gas guide frame 8. A baffle is fixedly connected to the bottom end of the molecular sieve 9. A guide pipe 10 is fixedly connected to one side of the gas guide frame 8, communicating with the mixing cylinder 5. A gas pump 11 is fixedly connected to one side of the mixing cylinder 5. The gas pump 11 draws gas from the bottom side of the guide pipe 10, allowing waste gas to pass through the molecular... After filtration by sieve 9, the air flows back to the mixing cylinder 5 from the upper end of the guide pipe 10. The output end of the air pump 11 is connected to the guide pipe 10. The air guide frame 8 is evenly inserted with the U-shaped tube 12. The outside of the U-shaped tube 12 is provided with a heat insulation frame 18. The two ends of the heat insulation frame 18 are fixedly connected to the mixing cylinder 5 and the air guide frame 8, respectively. The U-shaped tube 12 is filled with water. The exhaust gas contacts the surface of the U-shaped tube 12 and transfers heat to the water. Then the water circulates and the heat is transferred to the mixing cylinder 5. Thus, when the airflow comes into contact with the U-shaped tube 12 from the mixing cylinder 5, heat will be transferred. After being guided by the fan 14, the airflow comes into contact with the diverter shroud 15 and the turbulence ring 16, which can improve the airflow mixing and preheating effect. One side of the U-shaped tube 12 is located inside the mixing cylinder 5. The upper and lower sides of the mixing cylinder 5 are fixedly connected with baffle rings 19. The mixing cylinder 5 is fixedly connected with the air guide shroud 13. The bottom side of the air guide shroud 13 is fixedly connected with a bracket, and the fan 14 is rotatably connected inside the bracket.

[0019] The mixing cylinder 5 is fixedly connected to a support rod, and a flow divider 15 is fixedly connected to the support rod. By setting the support rod and the flow divider 15, the airflow can be further dispersed.

[0020] The flow divider 15 has a conical structure, and a turbulence ring 16 is uniformly fixedly connected to the upper end of the flow divider 15. By setting the turbulence ring 16, the turbulence can be increased, which facilitates the mixing of airflow.

[0021] Among them, a SiC gas sensor 17 is fixedly connected to one side of the gas guide frame 8. The SiC gas sensor 17 is located between the gas guide frame 8 and the flow guide tube 10. By setting the SiC gas sensor 17, the gas composition can be detected, which makes it easier to determine whether the molecular sieve 9 is saturated with adsorption.

[0022] Gas flow sensors are fixedly connected to both the guide pipe 10 and the nitrogen source pipe 7. The gas flow sensors are thermal gas mass flow meters, and the model of the gas flow sensor is FS400 series. By setting up the gas flow sensor, the utilization rate of nitrogen can be improved and energy consumption can be reduced through subsequent regulation.

[0023] Working principle: Silicon carbide is placed on the substrate, and the upper frame 3 and the bottom frame 1 are closed. The heating ring 2 heats the substrate and silicon carbide. Then, carbon source pipe 6 and nitrogen source pipe 7 respectively enter the mixing cylinder 5. At this time, the airflow first contacts the upper side of the U-shaped tube 12, and then passes through the air guide hood 13 and the flow divider hood 15, which can mix the airflow entering the mixing cylinder 5. Then the airflow enters the space between the upper frame 3 and the bottom frame 1 through the telescopic pipe 4. At this time, exhaust gas is generated and passes through the air guide frame 8 and the flow guide pipe 10. The heat carried by the exhaust gas contacts the bottom side of the U-shaped tube 12, and under the conduction of hot water, the upper side of the U-shaped tube 12 gradually begins to release heat. At this time, the heat contacts the gas entering the mixing cylinder 5, thereby achieving a preheating effect, improving the utilization rate of the heat energy generated by the heating device, and reducing energy consumption.

[0024] The above are merely preferred embodiments of this utility model. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of this utility model, and these improvements and modifications should also be considered within the scope of protection of this utility model.

[0025] All other parts of this utility model that are not described in detail belong to the prior art, and therefore will not be described in detail here.

[0026] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A heating device for silicon carbide epitaxy, comprising a base frame (1), a heating ring (2), and an upper frame (3), characterized in that, The upper frame (3) is fixedly connected to a telescopic tube (4), and the upper end of the telescopic tube (4) is fixedly connected to a mixing cylinder (5). A carbon source tube (6) is fixedly connected to one side of the upper end of the mixing cylinder (5), and a nitrogen source tube (7) is fixedly connected to the other side of the upper end of the mixing cylinder (5). The bottom frame (1) has evenly spaced air outlets at its bottom end. A gas guide frame (8) is fixedly connected to the bottom end of the bottom frame (1). A molecular sieve (9) is inserted into the bottom side of the gas guide frame (8). A baffle is fixedly connected to the bottom end of the molecular sieve (9). A flow guide tube (10) is fixedly connected to one side of the gas guide frame (8). The flow guide tube (10) communicates with the mixing cylinder (5). A carbon source tube (6) is fixedly connected to one side of the mixing cylinder (5). There is an air pump (11), the output end of which is connected to the guide pipe (10). A loop tube (12) is evenly inserted on the air guide frame (8). A heat insulation frame (18) is provided on the outside of the loop tube (12). The two ends of the heat insulation frame (18) are fixedly connected to the mixing cylinder (5) and the air guide frame (8), respectively. The loop tube (12) is filled with water. One side of the loop tube (12) is located inside the mixing cylinder (5). The upper and lower sides of the mixing cylinder (5) are fixedly connected to the retaining ring (19). The mixing cylinder (5) is fixedly connected to the air guide cover (13). The bottom side of the air guide cover (13) is fixedly connected to the bracket, and a fan (14) is rotatably connected inside the bracket.

2. The heating apparatus for silicon carbide epitaxy of claim 1, wherein, A support rod is fixedly connected inside the mixing cylinder (5), and a flow divider (15) is fixedly connected to the support rod.

3. The heating apparatus for silicon carbide epitaxy of claim 2, wherein, The flow divider (15) has a conical structure, and a flow ring (16) is uniformly fixedly connected to the upper end of the flow divider (15).

4. The heating apparatus for silicon carbide epitaxy of claim 1, wherein, A SIC gas sensor (17) is fixedly connected to one side of the gas guide frame (8), and the SIC gas sensor (17) is located between the gas guide frame (8) and the flow guide pipe (10).

5. The heating apparatus for silicon carbide epitaxy as described in claim 4, characterized in that, Gas flow sensors are fixedly connected to both the guide pipe (10) and the nitrogen source pipe (7), and the gas flow sensors are thermal gas mass flow meters.

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