Novel laser positioner

Abstract

The utility model discloses a novel laser positioner. According to the utility model, a vertical structure is adopted, the device comprises a PCB circuit board, an STM32 expansion board and a photoelectric detector module, the photoelectric detector module and the STM32 expansion board acquire a required stable power supply from a power supply circuit on the PCB circuit board, the photoelectric detector module converts a detected optical signal into an electric signal, and then transmits the electric signal to the STM32 expansion board for processing, and the STM32 expansion board is connected with the photoelectric detector module. And the STM32 expansion board processes the transmitted signal and then transmits a processing result to the PCB. The photoelectric detector module of the main part of the laser positioner adopts a 16 * 16 arrayed antimony selenide photoelectric detector, so that the failure rate can be reduced, the reliability and stability can be improved, the sensitivity can be improved, and the cost can be reduced. The method has very high use value.

Description

Technical Field

[0001] This utility model relates to the field of photoelectric detection, and more specifically, to a novel laser locator. Background Technology

[0002] In recent decades, with the development of science and technology, photoelectric detection systems have developed rapidly. As an important component of the advanced optoelectronic information industry, photoelectric detectors are widely used in many fields such as national defense technology, photographic imaging, industrial manufacturing, medical instruments, safety engineering, biomedicine, environmental monitoring, optical communication, and machine vision.

[0003] A photodetector is a device that converts light signals into electrical signals. It features high measurement accuracy, high speed, non-contact operation, long-distance measurement capability, large measurement range, and high degree of automation. Photodetectors primarily refer to photoelectric imaging devices, such as CCD and CMOS image sensors. Visible light photoelectric imaging devices are used for imaging in general scenarios, while infrared photoelectric imaging devices are used for imaging in low-background environments, such as nighttime imaging. Due to these imaging characteristics, laser positioning in some medical instruments and precision optical instruments often utilizes traditional CCD and CMOS devices.

[0004] However, traditional CCD photodetectors are complex to manufacture, costly, have low sensitivity, operate under harsh conditions, and have poor mechanical flexibility, which greatly limits their application in large-area, flexible, and low-cost devices. Utility Model Content

[0005] The purpose of this invention is to solve the problems of existing laser positioners, such as complex manufacturing, high cost, poor sensitivity and stability, many material limitations, and performance that need to be improved, and to provide a new type of laser positioner with strong practical value, low price, high testing sensitivity, and a wide range of light intensity measurement.

[0006] The technical solution adopted in this utility model is:

[0007] A novel laser positioner features a vertically structured laser detector comprising a PCB circuit board, an STM32 expansion board, and a photodetector module. The photodetector module and the STM32 expansion board obtain a stable power supply from the power circuitry on the PCB circuit board. The photodetector module converts the detected optical signal into an electrical signal and transmits this signal to the STM32 expansion board for processing. The STM32 expansion board processes the signal and transmits the result back to the PCB circuit board. The photodetector module uses a 16×16 array detector, with each detector having an NPN structure. Antimony selenide (Sb₂Se₃) is selected as the P-type material, and N-type semiconductors are introduced to construct the PN junction. The photodetector array and readout circuitry form a display system, enabling surface acquisition and data display of the optical signal. The optical signal from the photodetector module is converted into a digital signal via current, voltage, and A / D conversion. The data is then detected through serial communication, corrected for laser detection, and displayed.

[0008] When light shines on each image sensor unit of the photodetector array in a 16×16 array detector, each image sensor unit performs photoelectric conversion. The readout circuit selects, collects, processes, and displays the electrical signals of each image sensor unit point by point.

[0009] The photodetector module is equipped with a reader, which can be arranged into a 16*16 array.

[0010] The P-type material Sb2Se3 has a layered structure. The NPN structure materials of the photodetector module are ZnO / Sb2Se3 / Ga2O3. In the NPN structure, Sb2Se3 is used as a transistor-type P-type semiconductor to collect holes, while zinc oxide and gallium oxide are used as N-type semiconductors to generate electrons.

[0011] This invention utilizes an antimony selenide sensor. Each pixel of the antimony selenide sensor has a circuit that can convert electrical charge into voltage. This voltage is directly amplified by the circuit on the sensor and then sent as a reading through the readout area amplifier.

[0012] Compared with the prior art, the present invention has the following advantages:

[0013] The novel laser detector (positioner) of this invention adopts a 16×16 array design, which makes the system redundant. Even if some image-sensitive units fail, it can still work normally, reducing the overall failure rate and improving reliability and stability.

[0014] The antimony selenide (Sb2Se3) photodetector array used in this invention employs antimony selenide (Sb2Se3), which is abundant and inexpensive, as the P-type material, thus reducing raw material costs. Furthermore, antimony selenide (Sb2Se3) has low toxicity, posing minimal harm to the environment and human health during production, use, and disposal, meeting environmental protection requirements and contributing to sustainable development.

[0015] The novel laser detector (positioner) of this invention uses a vertically structured photoelectric detector, which has a faster response speed compared to a planar photoelectric detector.

[0016] The novel laser detector (positioner) of this invention employs an array design and a simplified manufacturing process, which helps reduce production costs and gives it a greater economic advantage compared to traditional detectors, making the product more competitive in the market.

[0017] This invention relates to a novel laser detection system using antimony selenide (Sb2Se3) photodetector arrays. Based on the photovoltaic effect, it converts received light signals into electrical signals and displays the data. It can be applied to the calibration of mechanical equipment in industrial production, the efficient monitoring of large areas during production processes, and especially in environmental monitoring and safety surveillance. It can improve the coverage and detection efficiency of target areas, facilitate the deployment of detection facilities, regularly check the status of buildings, and provide timely feedback.

[0018] This novel laser positioner is based on the photovoltaic effect, converting optical signals into digital signals via current, voltage, and A / D conversion. Data is then transmitted through serial communication for laser detection and calibration. This product is applied in industrial inspection and manufacturing. The core component of the laser positioner is the photodetector module, which has an NPN structure. The P-type material is proposed to be antimony selenide (Sb₂Se₃) due to its abundant reserves, low toxicity, low price, suitable bandgap (~1.15 eV), and high absorption coefficient (greater than 10). 5 cm -1 The low crystal growth temperature makes it ideal for fabricating novel, low-cost, and low-toxicity 16×16 array detectors. When light shines on each image-sensitive unit of the photodetector array, the unit undergoes photoelectric conversion. The readout circuit selects, collects, processes, and displays the electrical signals from each image-sensitive unit point by point. The photodetector array and readout circuit together form a display system, enabling surface acquisition and data display of light signals. Due to the low cost of raw materials, high testing sensitivity, and wide measurement range, this product provides a simple and inexpensive means to fabricate devices that can replace CCDs in fields such as laser positioning, making it highly valuable. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of this utility model;

[0020] Figure 2 This is a schematic diagram of the antimony selenide (Sb2Se3) readout circuit of this utility model;

[0021] Figure 3 This is a schematic diagram of the 16*16 electrode Sb2Se3 photodetector array of this utility model;

[0022] Figure 4 This is a PCB schematic diagram of the hardware circuit of this utility model;

[0023] Figure 5 This is a schematic diagram of the STM32 expansion board of this utility model;

[0024] Figure 6 This is a schematic diagram of the program flow of the control system of this utility model. Detailed Implementation

[0025] To further understand this utility model, preferred embodiments of this utility model are described below in conjunction with examples. However, it should be understood that these descriptions are only for further illustrating the features and advantages of this utility model, and not for limiting the scope of the claims of this utility model.

[0026] This utility model discloses a novel laser locator, wherein the novel laser detector adopts a vertical structure, such as... Figure 1 As shown, the system includes a PCB circuit board 2, an STM32 expansion board 3, and a photodetector module 1. The photodetector module and the STM32 expansion board obtain the necessary stable power from the power circuit on the PCB circuit board. The photodetector module converts the detected light signal into an electrical signal and transmits the electrical signal to the STM32 expansion board for processing. The STM32 expansion board processes the transmitted signal and transmits the processing result back to the PCB circuit board. The photodetector module uses a 16×16 array detector. Each detector in the photodetector module has an NPN structure, using antimony selenide (Sb₂Se₃) as the P-type material and introducing N-type semiconductors to construct the PN junction. The photodetector array and readout circuit form a display system to realize the surface acquisition and data display of the light signal. The light signal from the photodetector module is converted into a digital signal through current, voltage, and A / D conversion. The data is detected through serial communication, and after laser detection correction, it is displayed.

[0027] Example 1:

[0028] The structural schematic diagram of this utility model is shown below. Figure 1As shown, this invention selects antimony selenide (Sb₂Se₃) as the P-type material and as the material for the photodetector. Sb₂Se₃ has a layered structure and exhibits good electrical conductivity, pyroelectricity, and photoelectric properties. Sb₂Se₃ is a semiconductor material with a low bandgap, exhibiting good optical absorption and emission characteristics. It also possesses strong chemical stability and good resistance to corrosion by oxidants and acids, and is currently widely used in optoelectronic devices such as photoelectric sensors, photoelectric converters, and photovoltaic solar cells. (See attached reference.) Figure 2 A schematic diagram of the antimony selenide (Sb2Se3) readout circuit of this invention.

[0029] Antimony selenide (Sb₂Se₃) has attracted increasing attention in photovoltaic applications due to its excellent photoelectric properties, low cost, stable chemical properties, and low toxicity. Since antimony selenide is a P-type semiconductor, an N-type semiconductor is needed to construct the PN junction. Therefore, antimony selenide is introduced as a primary material for detectors.

[0030] The specific tasks are as follows:

[0031] First, antimony selenide thin films were prepared by vacuum thermal evaporation, and their crystal structure and optical properties were characterized by XRD, SEM, absorption spectroscopy, and Raman spectroscopy. The results showed that annealing in a selenium-containing atmosphere can improve the crystal quality of the antimony selenide thin film and increase its light absorption coefficient.

[0032] Example 2:

[0033] The second embodiment of this invention provides a novel vertical structure photovoltaic effect for a laser detector, which can be referred to in the appendix. Figure 3 This is a schematic diagram of the 16*16 electrode Sb2Se3 photodetector array of this utility model. (See attached diagram.) Figure 4 This is the PCD circuit board of this utility model, see attached drawing. Figure 5 This is an STM32 expansion board for this invention. The photovoltaic effect of the novel laser detector refers to the phenomenon in the novel laser detector where illumination causes a potential difference between different parts of a non-uniform semiconductor or a semiconductor-metal combination. Its working principle is based on the photovoltaic effect of semiconductors. When the photon energy is greater than the bandgap of the semiconductor material, the photon is absorbed, and electrons jump from the valence band to the conduction band, forming electron-hole pairs. Under the influence of the built-in electric field of the pn junction, electrons move towards the n-region, and holes move towards the p-region, thereby generating a photovoltage across the pn junction.

[0034] Compared to traditional detectors, novel laser detectors based on the photovoltaic effect offer advantages such as higher detection efficiency, better spectral selectivity, lower noise, and smaller size and power consumption, enabling high-sensitivity, high-resolution, and fast-response detection. In laser communication, they can achieve high-speed, long-distance signal transmission and reception; in environmental monitoring, they can perform highly sensitive detection of atmospheric pollutants and greenhouse gases; and in biomedicine, they can be used for biological imaging and disease diagnosis, such as detecting fluorescent markers within organisms or performing optical coherence tomography (OCT) imaging.

[0035] Example 3

[0036] The third embodiment of this utility model is based on a control system. The program runs on an STM32F103C8T6 control board, using the Keil 5 development environment. The program flowchart of the Keil 5 software for reading the circuit is shown below. Figure 6 As shown. First, the program starts, then enters a loop, using the I / O port to output digital signals to select the row and column channels. Then, it calls the STM32F103C8T6 information acquisition module to acquire the voltage signals from each input channel and outputs the acquired signals to the main controller. Running the program and opening a serial port debugging assistant, using a laser pointer to illuminate the area, the corresponding simulation data can be seen appearing in the debugging assistant. Experimental results show that the positions with numbers are the laser-illuminated positions, and the unilluminated areas display 0, indicating that the product meets design expectations.

[0037] The above description of the embodiments is only for the purpose of helping to understand the method and core idea of ​​this utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made to this utility model without departing from the principle of this utility model, and these improvements and modifications also fall within the protection scope of the claims of this utility model.

Claims

1. A novel laser positioner characterized by: The novel laser detector adopts a vertical structure, including a PCB circuit board, an STM32 expansion board, and a photodetector module. The photodetector module and the STM32 expansion board obtain the necessary stable power from the power circuit on the PCB circuit board. After the photodetector module converts the detected optical signal into an electrical signal, it transmits the electrical signal to the STM32 expansion board for processing. The STM32 expansion board processes the incoming signal and transmits the processing result back to the PCB circuit board. The photodetector module uses a 16×16 array detector, and each detector in the photodetector module has an NPN structure. Antimony selenide (Sb₂Se₃) is selected as the P-type material, and N-type semiconductors are introduced to construct the PN junction. The photodetector array and readout circuit form a display system to realize the surface acquisition and data display of the optical signal. The optical signal of the photodetector module is converted into a digital signal through current, voltage, and A / D conversion. The data is detected through serial communication, and after laser detection correction, it is displayed.

2. The novel laser positioner according to claim 1, characterized in that: When light shines on each image sensor unit of the photodetector array in a 16×16 array detector, each image sensor unit performs photoelectric conversion. The readout circuit selects, collects, processes, and displays the electrical signals of each image sensor unit point by point.

3. The new laser positioner according to claim 1 or 2, characterized in that: The readout circuit is integrated on the PCB circuit board or is tightly connected to the PCB circuit board through chip packaging.

4. The novel laser positioner of claim 1, wherein: The P-type material Sb2Se3 has a layered structure. The NPN structure materials for each detector are ZnO / Sb2Se3 / Ga2O3, respectively. In the NPN structure, Sb2Se3 is used as a transistor-type P-type semiconductor to collect holes, while zinc oxide and gallium oxide are used as N-type semiconductors to generate electrons.

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