Semiconductor device

Abstract

The utility model provides semiconductor equipment. The semiconductor equipment comprises a reaction chamber, a target air exhaust pipeline, a butterfly valve and a micro plasma generator. The target air exhaust pipeline is connected with the reaction chamber, the butterfly valve is arranged in the target air exhaust pipeline, the micro plasma generator is arranged at a target position of the target air exhaust pipeline, and the target position is located between the reaction chamber and the butterfly valve. In other words, the micro plasma generator is arranged between the target chamber and the butterfly valve, so that the micro plasma generator can directly generate plasma for cleaning the butterfly valve near the butterfly valve, the butterfly valve is directly cleaned, loss of the plasma from the reaction chamber to the target exhaust pipeline is avoided, and the service life of the butterfly valve is prolonged. And meanwhile, the butterfly valve is evenly cleaned through plasmas located near the butterfly valve, and the cleaning effect of the butterfly valve is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and in particular to a semiconductor device. Background Technology

[0002] With the development of semiconductor-related technologies, the manufacturing processes for semiconductor devices and chips are also rapidly evolving. Typically, after the manufacturing of semiconductor devices or chips is completed, the process chambers and process pipelines are cleaned. Remote plasma sources (RPS) can be used for cleaning process chambers and evacuation pipelines.

[0003] Currently, the butterfly valve is installed in the air extraction pipeline, and it can also be cleaned using a remote plasma source. However, there are problems with uneven cleaning and poor cleaning effect. Utility Model Content

[0004] In view of this, the purpose of this application is to provide a semiconductor device that can improve the cleaning efficiency of butterfly valves, achieve uniform cleaning of butterfly valves, and improve the cleaning effect of butterfly valves.

[0005] This application provides a semiconductor device, which includes a reaction chamber, a target extraction pipe, a butterfly valve, and a miniature plasma generator;

[0006] The target extraction pipe is connected to the reaction chamber, the butterfly valve is installed in the target extraction pipe, and the micro plasma generator is installed at the target position of the target extraction pipe, the target position being located between the reaction chamber and the butterfly valve.

[0007] Optionally, the coil of the micro plasma generator is located in the target extraction pipe.

[0008] Optionally, the target extraction pipe is provided with a first placement structure for placing the coil of the micro plasma generator.

[0009] Optionally, the coil of the micro plasma generator surrounds the target evacuation duct.

[0010] Optionally, a second placement structure is provided around the target extraction pipe, the second placement structure being used for the coil of the micro plasma generator.

[0011] Optionally, the distance between the target location and the butterfly valve is less than a distance threshold.

[0012] Optionally, the semiconductor device further includes a first conduit connected to the reaction chamber for introducing a cleaning gas into the reaction chamber, and the micro plasma generator for exciting the cleaning gas into plasma.

[0013] Optionally, the semiconductor device further includes a second conduit connected to the target extraction conduit at a first location, the first location being between the reaction chamber and the target location.

[0014] Optionally, the semiconductor device further includes a radio frequency power supply;

[0015] The radio frequency power supply is connected to the micro plasma generator.

[0016] Optionally, the connection point between the target extraction pipe and the reaction chamber is the bottom of the reaction chamber.

[0017] This application provides a semiconductor device including a reaction chamber, a target extraction pipe, a butterfly valve, and a micro plasma generator. The target extraction pipe is connected to the reaction chamber, the butterfly valve is disposed within the target extraction pipe, and the micro plasma generator is disposed at a target location within the target extraction pipe, between the reaction chamber and the butterfly valve. In other words, by distributing the micro plasma generator between the target chamber and the butterfly valve, the micro plasma generator can directly generate plasma near the butterfly valve to clean it, thereby directly cleaning the butterfly valve and avoiding plasma loss during the transition from the reaction chamber to the target extraction pipe, thus improving the cleaning efficiency of the butterfly valve. Furthermore, the use of plasma located near the butterfly valve provides uniform cleaning, enhancing the overall cleaning effect. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This paper shows a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application;

[0020] Figure 2 This invention provides a schematic diagram of the structure of another semiconductor device according to an embodiment of the present application.

[0021] Figure 3 A schematic diagram of the structure of another semiconductor device provided in an embodiment of this application is shown. Detailed Implementation

[0022] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0023] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0024] This application is described in detail with reference to the schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the structure may be partially enlarged, not according to general proportions. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0025] With the development of semiconductor-related technologies, the manufacturing processes of semiconductor devices and chips are also developing rapidly.

[0026] Currently, the butterfly valve is installed in the extraction pipeline, allowing for simultaneous cleaning using a remote plasma source. However, significant losses occur during the journey of the cleaning plasma from the remote plasma source to the butterfly valve, resulting in uneven cleaning and poor cleaning effectiveness. To improve the cleaning effect on the butterfly valve, the amount of cleaning gas used needs to be increased, thus increasing cleaning costs.

[0027] Therefore, there is an urgent need for a butterfly valve cleaning method that can shorten cleaning time, improve cleaning uniformity, and reduce the amount of cleaning gas used.

[0028] Based on this, this application provides a semiconductor device including a reaction chamber, a target extraction pipe, a butterfly valve, and a micro plasma generator. The target extraction pipe is connected to the reaction chamber, the butterfly valve is disposed in the target extraction pipe, and the micro plasma generator is disposed at a target location in the target extraction pipe, the target location being located between the reaction chamber and the butterfly valve. That is, by disposing of the micro plasma generator between the target chamber and the butterfly valve, the micro plasma generator can directly generate plasma near the butterfly valve to clean it, thereby directly cleaning the butterfly valve and avoiding plasma loss from the reaction chamber to the target extraction pipe, improving the cleaning efficiency of the butterfly valve. Simultaneously, the plasma located near the butterfly valve provides uniform cleaning, enhancing the cleaning effect of the butterfly valve.

[0029] To better understand the technical solution and effects of this application, the specific embodiments will be described in detail below with reference to the accompanying drawings.

[0030] See Figure 1 The figure is a schematic diagram of the structure of a semiconductor device provided in an embodiment of this application.

[0031] The semiconductor device provided in this embodiment includes: a reaction chamber 110, a target extraction pipe 120, a butterfly valve 130, and a miniature plasma generator 140.

[0032] In embodiments of this application, the reaction chamber 110 may include a platform 111 for placing a substrate to be processed. The platform 111 can also heat the substrate to be processed. The reaction chamber 110 may further include a mechanical structure for placing the substrate to be processed on the platform 111. The reaction chamber 110 is a chamber for film growth. By introducing a reactive gas into the reaction chamber, the reactive gas grows a film on the substrate to be processed placed on the platform 111. The platform 111 can be heated to better promote film growth of the reactive gas on the substrate. During film growth, the first step is to introduce a reactive gas into the reaction chamber 110 and set the reaction conditions within the chamber, such as the reactive gas introduction rate and the substrate heating temperature. Once the reaction conditions in the chamber have stabilized, and after a period of time following the introduction of the reactive gas, the substrate to be treated is placed on the substrate 110. The substrate 111 is then heated to allow film growth on the substrate using the reactive gas. Specifically, when introducing the reactive gas into the reaction chamber 110, the gas inlet can be located above the substrate 111 and opposite to its upper surface.

[0033] In the embodiments of this application, the target extraction pipe 120 is a pipe that maintains the vacuum level of the reaction chamber 110. The target extraction pipe 120 is connected to the reaction chamber 110 so that the target extraction pipe 120 enables the reaction chamber 110 to reach a preset vacuum level. Considering that whether it is a reactive gas or a cleaning gas introduced into the reaction chamber 110, the gas needs to stay in the reaction chamber 110 for a sufficient period of time and needs to fill the reaction chamber 110 in order to achieve the effect of film formation or cleaning, the connection point between the target extraction pipe 120 and the reaction chamber 110 is usually at the bottom of the reaction chamber 110, as shown in the reference. Figure 1 As shown.

[0034] In the embodiments of this application, considering that the butterfly valve 130 serves as a regulating valve for achieving a preset vacuum level in the reaction chamber 110 through the target extraction pipeline 120, the butterfly valve 130 can be installed in the target extraction pipeline 120. Specifically, the butterfly valve 130 can be installed on the side of the target extraction pipeline 120 away from the reaction chamber 110, that is, the butterfly valve 130 is installed at the tail end of the target extraction pipeline 120.

[0035] In the embodiments of this application, considering that the inlet for the reaction gas can also be used to introduce cleaning gas, that is, after the process is completed, when cleaning gas is introduced into the reaction chamber 110, the inlet for the cleaning gas can also be located above the base 111 and opposite to the upper surface of the base 111. In this way, the cleaning gas enters the reaction chamber 110 from the inlet located above the base 111 to form plasma. Then, the plasma flows from the reaction chamber 110 to the target extraction pipe 120 to the butterfly valve to clean the butterfly valve. Considering that the plasma formed by the cleaning gas may be lost during the flow process, resulting in uneven cleaning or poor cleaning effect on the butterfly valve, a micro plasma generator 140 can be set at the target position of the target extraction pipe 120. The target position is located between the reaction chamber 110 and the butterfly valve 130, that is, a micro plasma generator 140 is set near the butterfly valve 130. The micro plasma generator 140 is used to re-excite the cleaning gas near the butterfly valve 130 into plasma for cleaning, thereby achieving comprehensive and uniform cleaning of the butterfly valve 130.

[0036] Specifically, the distance between the target location and the butterfly valve 130 is less than a distance threshold. The distance threshold can be the coverage area of ​​the plasma generated by the plasma generator 140. In other words, the positioning of the plasma generator 140 enables the generated plasma to clean the butterfly valve 130, thereby improving the cleaning effect of the butterfly valve 130.

[0037] In other words, the micro plasma generator 140 is positioned between the target chamber 110 and the butterfly valve 130. This allows the micro plasma generator 140 to directly generate plasma near the butterfly valve 130 to clean it, thereby directly cleaning the butterfly valve 130. This avoids plasma loss between the reaction chamber 110 and the target extraction pipe 120, improving the cleaning efficiency of the butterfly valve 130. At the same time, the plasma located near the butterfly valve 130 is used to uniformly clean the butterfly valve 130, improving the cleaning effect of the butterfly valve 130.

[0038] Considering the different coil sizes of the micro plasma generator 140, the different ways in which the micro plasma generator 140 is installed in the target extraction pipe 120 are described in detail below.

[0039] As one possible implementation, the coil of the miniature plasma generator 140 is located in the target extraction duct 120, referenced Figure 1 As shown. When the coil of the micro plasma generator 140 is located in the target extraction pipe 120, the diameter of the coil is smaller than the diameter of the target extraction pipe 120. In order to increase the plasma excitation effect of the micro plasma generator 140, the length occupied by the coil of the micro plasma generator 140 can be increased, that is, the proportion occupied by the coil of the micro plasma generator 140 in the length direction of the target extraction pipe 120 can be increased.

[0040] To achieve the placement of a miniature plasma generator 140 with a coil diameter smaller than that of the target extraction pipe 120 at a target location, a first placement structure (not shown in the figure) can be provided in the target extraction pipe 120, wherein the coil of the miniature plasma generator 140 can be placed in the first placement structure. Specifically, the location of the first placement structure in the target extraction pipe 120 is the target location.

[0041] As another possible implementation, the coil of the miniature plasma generator 140 is wound around the target extraction duct 120, referenced Figure 2 As shown. When the coil of the micro plasma generator 140 surrounds the target exhaust pipe 120, the diameter of the coil is larger than the diameter of the target exhaust pipe 120. That is, the coil of the micro plasma generator 140 has a larger setting space, the effect of generating plasma is stronger, and the cleaning effect on the butterfly valve 130 is better.

[0042] To achieve the goal of positioning a miniature plasma generator 140 with a coil surrounding the target extraction pipe 120 at a target location, a second placement structure (not shown in the figure) can be provided around the target extraction pipe 120. This second placement structure can house the coil of the miniature plasma generator 140. Specifically, the second placement structure is positioned at the target location within the target extraction pipe 120, and the second placement structure can be an integral part of the target extraction pipe 120.

[0043] In embodiments of this application, to enable the micro plasma generator 140 to excite clean gas into plasma, a radio frequency (RF) power supply 150 can be provided in a semiconductor device, referencing... Figure 1 or Figure 2 As shown, the radio frequency power supply 150 and the miniature plasma generator 140 are electrically connected so that the radio frequency power supply 150 supplies power to the miniature plasma generator 140.

[0044] In embodiments of this application, the semiconductor device further includes a first conduit 160, which connects to the reaction chamber 110 and is used to introduce a cleaning gas into the reaction chamber 110. That is, the first conduit 160 can be located above the base 111 and opposite to the upper surface of the base 111. (Refer to...) Figure 1 or Figure 2 As shown, a cleaning gas is introduced into the reaction chamber 110 from the first pipe 160. Before entering the reaction chamber 110, the cleaning gas is excited into plasma by the remote plasma source 101 so that the plasma cleans the reaction chamber 110. When the plasma flows from the reaction chamber 110 to the butterfly valve 130 of the target exhaust pipe 120, the number of active reaction atoms decreases. At this time, the micro plasma generator 140 located near the butterfly valve 130 can be used to continue to excite the cleaning gas into plasma, thereby improving the cleaning effect on the butterfly valve 130.

[0045] In embodiments of this application, the semiconductor device further includes a second conduit 170, referenced to... Figure 3 As shown, the second pipe 170 is connected to the target extraction pipe 120 at a first position, which is located between the reaction chamber 110 and the target position. The second pipe 170 is used to introduce clean gas into the target extraction pipe 120. That is, the connection point between the second pipe 170 and the target extraction pipe 120 is located between the reaction chamber 110 and the micro plasma generator 140, so that after the second pipe 170 introduces clean gas into the target extraction pipe 120, the micro plasma generator 140 can directly excite the clean gas introduced by the second pipe 170 into plasma, thereby cleaning the butterfly valve 130. In this way, the clean gas used to clean the butterfly valve 130 includes not only the gas flowing from the first pipe 160 and the reaction chamber 110 to the butterfly valve 130, but also the gas flowing from the second pipe 170 to the butterfly valve 130, thereby achieving multiple cleanings of the butterfly valve 130, and thus achieving comprehensive and uniform cleaning of the butterfly valve 130, reducing the phenomenon of incomplete and uneven cleaning of the butterfly valve 130, and ensuring the stability of process performance.

[0046] In practical applications, the second pipe 170 can be combined with the miniature plasma generator 140 by setting it in the target extraction pipe 120. Figure 3 The diagram only shows the structure of the micro plasma generator 140 with its coil surrounding the target extraction pipe 120 and the semiconductor device with the second pipe 170. The coil of the micro plasma generator 140 can be combined with the second pipe 170 to form a new semiconductor device.

[0047] Therefore, the semiconductor device provided in this application, by placing the micro-plasma generator near the butterfly valve, can avoid the loss of active reaction atoms from the reaction chamber to the vicinity of the butterfly valve, thereby improving the cleaning efficiency of the butterfly valve, shortening the cleaning process time, increasing the service life of the butterfly valve, reducing costs, and increasing production capacity. It can also improve the phenomena of incomplete and uneven cleaning of the butterfly valve, ensuring the stability of process performance.

[0048] In other words, this application provides a semiconductor device including a reaction chamber, a target extraction pipe, a butterfly valve, and a micro plasma generator. The target extraction pipe is connected to the reaction chamber, the butterfly valve is disposed within the target extraction pipe, and the micro plasma generator is disposed at a target location within the target extraction pipe, between the reaction chamber and the butterfly valve. That is, by distributing the micro plasma generator between the target chamber and the butterfly valve, the micro plasma generator can directly generate plasma near the butterfly valve to clean it, thereby directly cleaning the butterfly valve and avoiding plasma loss during the transition from the reaction chamber to the target extraction pipe, thus improving the cleaning efficiency of the butterfly valve. Furthermore, the use of plasma located near the butterfly valve provides uniform cleaning, enhancing the overall cleaning effect.

[0049] The device embodiments described above are merely illustrative, and the components described as separate parts may or may not be physically separate. Furthermore, some or all of the components can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0050] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. A semiconductor device, characterized by comprising: The semiconductor device includes a reaction chamber, a target extraction pipe, a butterfly valve, and a miniature plasma generator; The target extraction pipe is connected to the reaction chamber, the butterfly valve is installed in the target extraction pipe, and the micro plasma generator is installed at the target position of the target extraction pipe, the target position being located between the reaction chamber and the butterfly valve.

2. The semiconductor device according to claim 1, wherein The coil of the micro plasma generator is located in the target extraction pipe.

3. The semiconductor device of claim 2, wherein The target extraction pipe is provided with a first placement structure, which is used to place the coil of the micro plasma generator.

4. The semiconductor device according to claim 1, wherein The coil of the miniature plasma generator surrounds the target extraction pipe.

5. The semiconductor device according to claim 4, wherein A second placement structure is provided around the target extraction pipe, and the second placement structure is used for the coil of the micro plasma generator.

6. The semiconductor device according to claim 1, wherein The distance between the target location and the butterfly valve is less than a distance threshold.

7. The semiconductor device according to claim 1, wherein The semiconductor device further includes a first conduit connected to the reaction chamber for introducing a clean gas into the reaction chamber, and a micro plasma generator for exciting the clean gas into plasma.

8. The semiconductor device of claim 1, wherein The semiconductor device further includes a second conduit connected to the target extraction conduit at a first location, the first location being between the reaction chamber and the target location.

9. The semiconductor device according to any one of claims 1 to 8, wherein The semiconductor device also includes a radio frequency power supply; The radio frequency power supply is connected to the micro plasma generator.

10. The semiconductor device according to any one of claims 1-8, characterized in that, The connection point between the target extraction pipe and the reaction chamber is at the bottom of the reaction chamber.

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