Efficient heat dissipation type semiconductor chip ceramic substrate

Abstract

The utility model discloses a high-efficiency heat dissipation type semiconductor chip ceramic substrate, which comprises a ceramic body, a conductive circuit, a waterproof sealing ring, a first heat dissipation layer, a second heat dissipation layer and a heat dissipation aluminum plate, the first heat dissipation layer is arranged on the inner bottom face of the containing cavity and connected with the upper ends of the heat conduction columns, the second heat dissipation layer is arranged on the lower surface of the ceramic body and connected with the lower ends of the heat conduction columns, the heat dissipation aluminum plate is arranged on the lower surface of the second heat dissipation layer, and heat conduction glue is arranged in a matched mode. The ceramic substrate can effectively achieve the heat dissipation function, heat generated by the semiconductor chip is transmitted to the heat dissipation aluminum plate through the first heat dissipation layer, the heat conduction column and the second heat dissipation layer in sequence for rapid heat dissipation, and heat in the containing cavity is transmitted to the heat dissipation aluminum plate through the heat conduction glue and the second heat dissipation layer in sequence for rapid heat dissipation. The heat dissipation performance of the product is enhanced, overhigh temperature of the semiconductor chip during working is avoided, the performance of the semiconductor chip is ensured, the service life of the product is prolonged, and the product quality is improved.

Description

Technical Field

[0001] This utility model relates to the field of ceramic substrates, and in particular to a high-efficiency heat dissipation type semiconductor chip ceramic substrate. Background Technology

[0002] Ceramic substrates are special boards made by directly bonding copper foil to the surface (single-sided or double-sided) of an alumina (Al2O3) or aluminum nitride (AlN) ceramic substrate at high temperatures. The resulting ultra-thin composite substrates possess excellent electrical insulation properties, high thermal conductivity, excellent solderability, and high adhesion strength. Like PCB boards, they can be etched with various patterns and have a large current-carrying capacity. Therefore, ceramic substrates have become a fundamental material for high-power power electronic circuit structure and interconnection technologies.

[0003] Semiconductor chips are semiconductor devices that perform a certain function, which are made by etching and wiring on semiconductor wafers. Currently, semiconductor chips are generally mounted on ceramic substrates to form an electrical component.

[0004] Currently, ceramic substrates used for semiconductor chips mainly consist of a ceramic body and conductive lines. The ceramic body has a cavity for mounting the semiconductor chip, and the conductive lines are located on the bottom surface of the cavity, allowing the semiconductor chip to be mounted and connected to the conductive lines. While this structure is relatively simple, the ceramic substrate has poor heat dissipation, which can easily lead to overheating of the semiconductor chip during operation. This causes performance degradation, accelerates chip aging, and results in a shorter product lifespan. Overheating also poses safety hazards, inconveniences users, and the product quality is generally poor, making it uncompetitive and unable to meet current needs. Therefore, it is necessary to research a new technical solution to improve the current ceramic substrate. Utility Model Content

[0005] In view of this, the present invention addresses the shortcomings of the existing technology, and its main purpose is to provide a high-efficiency heat dissipation type ceramic substrate for semiconductor chips. It can effectively solve the problems of existing ceramic substrates, such as poor heat dissipation performance, easy overheating of semiconductor chips during operation, resulting in decreased semiconductor chip performance, accelerated aging of semiconductor chips, short product lifespan, safety hazards caused by excessive temperature, inconvenience to users, and generally poor product quality and lack of competitiveness.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A high-efficiency heat-dissipating ceramic substrate for semiconductor chips includes a ceramic body, conductive lines, a waterproof sealing ring, a first heat dissipation layer, a second heat dissipation layer, and a heat dissipation aluminum plate. The ceramic body has an internal cavity adapted to accommodate the semiconductor chip. An inlet for introducing the semiconductor chip is formed on the upper surface of the ceramic body, located above and communicating with the cavity. The inlet is coaxially arranged with the cavity, and its inner diameter is smaller than that of the cavity. A through-hole for venting and injecting thermally conductive adhesive is formed on the lower surface of the ceramic body, communicating with the cavity. The lower surface of the body has multiple heat-conducting holes, all of which are connected to the accommodating cavity. Each heat-conducting hole contains a heat-conducting pillar. The conductive circuit is disposed within the ceramic body and has multiple pads, all of which are located on the inner bottom surface of the accommodating cavity. The waterproof sealing ring is fitted around the periphery of the inlet and seals against the outer wall of the semiconductor chip. The first heat dissipation layer is disposed on the inner bottom surface of the accommodating cavity and is connected to the upper ends of the multiple heat-conducting pillars. The second heat dissipation layer is disposed on the lower surface of the ceramic body and is connected to the lower ends of the multiple heat-conducting pillars. The heat dissipation aluminum plate is disposed on the lower surface of the second heat dissipation layer.

[0008] As a preferred embodiment, the ceramic body includes a lower ceramic layer and an upper ceramic layer; the aforementioned conductive lines are formed on the upper surface of the lower ceramic layer, the through holes and heat-conducting holes are disposed on the lower ceramic layer, the first heat dissipation layer is disposed on the upper surface of the lower ceramic layer, and the second heat dissipation layer is disposed on the lower surface of the lower ceramic layer; the upper ceramic layer is stacked and fixed on the upper surface of the lower ceramic layer, and a cavity is recessed on the lower surface of the upper ceramic layer. The lower ceramic layer seals the opening of the cavity to form the aforementioned receiving cavity, and the aforementioned inlet is disposed on the upper surface of the upper ceramic layer. The structure is simple, easy to manufacture, and convenient for mass production.

[0009] As a preferred embodiment, the upper ceramic layer and the lower ceramic layer are bonded together by an adhesive layer, which effectively enhances the stability of the connection structure between the upper and lower ceramic layers.

[0010] As a preferred embodiment, the upper and lower ceramic layers are surrounded by a reinforcing frame. The lower end of the reinforcing frame is located on the periphery of the heat dissipation aluminum plate. The reinforcing frame is made of carbon fiber, which can prevent the upper and lower ceramic layers from separating and effectively enhance the overall structural strength of the ceramic body. Carbon fiber has the characteristics of high strength and light weight, and has good high temperature resistance and corrosion resistance.

[0011] As a preferred embodiment, the heat dissipation aluminum plate has multiple horizontally arranged heat dissipation holes. The design of multiple heat dissipation holes increases the heat dissipation area of ​​the heat dissipation aluminum plate, and the heat can be dissipated more quickly from the side of the heat dissipation aluminum plate and the multiple heat dissipation holes, effectively improving the heat dissipation efficiency.

[0012] As a preferred embodiment, an annular positioning groove is provided around the inlet, and an annular positioning protrusion is provided on the waterproof sealing ring. The annular positioning protrusion is positioned in the annular positioning groove to effectively enhance the stability of the connection structure between the waterproof sealing ring and the ceramic body, and further enhance the waterproof performance and improve product quality.

[0013] As a preferred embodiment, the waterproof sealing ring has an E-shaped cross-section.

[0014] As a preferred embodiment, the ceramic body is made of aluminum nitride, which has high thermal conductivity, good mechanical properties, good electrical insulation properties, and chemical stability.

[0015] As a preferred embodiment, the first and second heat dissipation layers are made of graphene, which has excellent heat dissipation and thermal conductivity.

[0016] As a preferred embodiment, the heat-conducting pillar is made of graphene, which has excellent heat dissipation and thermal conductivity.

[0017] Compared with the prior art, this utility model has obvious advantages and beneficial effects. Specifically, as can be seen from the above technical solution:

[0018] By placing a first heat dissipation layer on the inner bottom surface of the accommodating cavity and connecting it to the upper ends of multiple heat-conducting pillars, placing a second heat dissipation layer on the lower surface of the ceramic body and connecting it to the lower ends of multiple heat-conducting pillars, and placing a heat dissipation aluminum plate on the lower surface of the second heat dissipation layer, along with thermally conductive adhesive, this ceramic substrate structure effectively achieves heat dissipation. The heat generated by the semiconductor chip is sequentially transferred through the first heat dissipation layer, the heat-conducting pillars, and the second heat dissipation layer to the heat dissipation aluminum plate for rapid cooling. Similarly, the heat in the accommodating cavity is sequentially transferred through the thermally conductive adhesive and the second heat dissipation layer to the heat dissipation aluminum plate for rapid cooling. This significantly improves thermal conductivity, enhances the product's heat dissipation performance, prevents the semiconductor chip from overheating during operation, ensures the performance of the semiconductor chip, extends the product's lifespan, enhances safety during use, provides convenience for users, improves product quality, makes the product more competitive, and meets current needs.

[0019] To more clearly illustrate the structural features and effects of this utility model, the following detailed description of this utility model is provided in conjunction with the accompanying drawings and specific embodiments. Attached Figure Description

[0020] Figure 1 This is a cross-sectional schematic diagram of a preferred embodiment of the present invention.

[0021] Explanation of reference numerals in the attached diagram:

[0022] 10. Ceramic body 11. Lower ceramic layer

[0023] 12. Upper ceramic layer 121. Cavity

[0024] 13. Adhesive layer 14. Reinforced frame

[0025] 101. Receptacle cavity; 102. Inlet port

[0026] 1021, Annular positioning groove; 103, Through hole

[0027] 104, heat-conducting hole 20, conductive circuit

[0028] 21. Solder pads; 30. Waterproof sealing rings

[0029] 31. Annular positioning protrusion; 40. First heat dissipation layer

[0030] 50. Second heat dissipation layer; 60. Heat dissipation aluminum plate

[0031] 61. Heat dissipation holes; 70. Semiconductor chips

[0032] 71. Surface Mount Solder Pins 80. Thermal Adhesive

[0033] 90. Heat-conducting column. Detailed Implementation

[0034] Please refer to Figure 1 As shown, it illustrates the specific structure of a preferred embodiment of the present invention, including a ceramic body 10, a conductive line 20, a waterproof sealing ring 30, a first heat dissipation layer 40, a second heat dissipation layer 50, and a heat dissipation aluminum plate 60.

[0035] The ceramic body 10 has an internal cavity 101 adapted to the semiconductor chip 70. The upper surface of the ceramic body 10 has an inlet 102 for the semiconductor chip 70 to be introduced. The inlet 102 is located above the cavity 101 and communicates with the cavity 101. The inlet 102 is coaxially arranged with the cavity 101. The inner diameter of the inlet 102 is smaller than the inner diameter of the cavity 101. The lower surface of the ceramic body 10 has a through hole 103 for venting and injecting thermally conductive adhesive 80. The through hole 103 communicates with the cavity 101. The lower surface of the ceramic body 10 has a plurality of thermally conductive holes 104, all of which communicate with the cavity 101. Each thermally conductive hole 104 has a thermally conductive column 90.

[0036] In this embodiment, the ceramic body 10 includes a lower ceramic layer 11 and an upper ceramic layer 12; the through holes 103 and heat-conducting holes 104 are disposed on the lower ceramic layer 11, and there are multiple through holes 103 and heat-conducting holes 104; the upper ceramic layer 12 is stacked and fixed on the upper surface of the lower ceramic layer 11, and a cavity 121 is recessed on the lower surface of the upper ceramic layer 12. The lower ceramic layer 11 seals the opening of the cavity 121 to form the aforementioned receiving cavity 101, and the aforementioned inlet 102 is disposed on the upper surface of the upper ceramic layer 12. The structure is simple, easy to manufacture, and convenient for mass production; the upper ceramic layer 12 and the lower ceramic layer 11 are bonded and fixed together by an adhesive layer 13, which effectively strengthens the upper ceramic layer 12 and the lower ceramic layer 11. 11. Stability of the connection structure; The upper ceramic layer 12 and the lower ceramic layer 11 are surrounded by a reinforcing frame 14. The lower end of the reinforcing frame 14 is located on the periphery of the heat dissipation aluminum plate 60. The reinforcing frame 14 is made of carbon fiber, which can prevent the upper ceramic layer 12 and the lower ceramic layer 11 from separating, effectively enhancing the overall structural strength of the ceramic body 10. Carbon fiber has the characteristics of high strength and light weight, and has good high temperature resistance and corrosion resistance. In addition, the lower ceramic layer 11 and the upper ceramic layer 12 can be made of two different ceramic materials. Different ceramic materials can be selected according to the required strength, reducing the production cost of the product while ensuring product performance and meeting different needs.

[0037] In this embodiment, an annular positioning groove 1021 is provided around the inlet 102; the ceramic body 10 is made of aluminum nitride, which has high thermal conductivity, good mechanical properties, good electrical insulation properties and chemical stability; the heat-conducting pillar 90 is made of graphene, which has good heat dissipation and thermal conductivity; the inlet 102 is funnel-shaped to better guide the semiconductor chip 70 into the accommodating cavity 101.

[0038] The conductive line 20 is disposed inside the ceramic body 10. The conductive line 20 has multiple pads 21, all of which are located on the inner bottom surface of the accommodating cavity 101. In this embodiment, the conductive line 20 is formed on the upper surface of the lower ceramic layer 11.

[0039] The waterproof sealing ring 30 is fitted around the periphery of the inlet 102 and seals against the outer wall of the semiconductor chip 70 to prevent external moisture from entering the accommodating cavity 101, thereby better achieving the waterproof effect of the product. In this embodiment, the waterproof sealing ring 30 is provided with an annular positioning protrusion 31, which is positioned in the annular positioning groove 1021 to effectively enhance the stability of the connection structure between the waterproof sealing ring 30 and the ceramic body 10, and further enhance the waterproof performance and improve product quality. The cross-section of the waterproof sealing ring 30 is E-shaped.

[0040] The first heat dissipation layer 40 is disposed on the inner bottom surface of the accommodating cavity 101 and connected to the upper end of the plurality of heat-conducting pillars 90; in this embodiment, the first heat dissipation layer 40 is disposed on the upper surface of the lower ceramic layer 11; the first heat dissipation layer 40 is made of graphene material, which has good heat dissipation and thermal conductivity.

[0041] The second heat dissipation layer 50 is disposed on the lower surface of the ceramic body 10 and connected to the lower ends of the plurality of heat-conducting pillars 90; in this embodiment, the second heat dissipation layer 50 is disposed on the lower surface of the lower ceramic layer 11; the second heat dissipation layer 50 is made of graphene, which has good heat dissipation and thermal conductivity.

[0042] The heat dissipation aluminum plate 60 is disposed on the lower surface of the second heat dissipation layer 50. In this embodiment, the heat dissipation aluminum plate 60 is provided with a plurality of heat dissipation through holes 61 horizontally. The design of the plurality of heat dissipation through holes 61 increases the heat dissipation area of ​​the heat dissipation aluminum plate 60, and the heat can be dissipated from the side of the heat dissipation aluminum plate 60 and the plurality of heat dissipation through holes 61 more quickly, effectively improving the heat dissipation efficiency.

[0043] The manufacturing and assembly process of this embodiment is described in detail below:

[0044] First, a ceramic body 10 with conductive lines 20, a waterproof sealing ring 30, a first heat dissipation layer 40, and heat-conducting pillars 90 is fabricated. Next, solder paste is applied to each surface mount pin 71 of the semiconductor chip 70. Then, the semiconductor chip 70 is inserted into the receiving cavity 101 from top to bottom through the inlet 102. During insertion, air is vented through the through-hole 103, allowing the semiconductor chip 70 to be inserted into the receiving cavity 101 better and faster. After insertion, each surface mount pin 71 is attached to the surface of its corresponding pad 21, and the semiconductor chip 70 is attached to the surface of the first heat dissipation layer 40, thus forming a semi-finished product. Then, ... The semi-finished product undergoes reflow soldering to solder the semiconductor chip 70 to the conductive line 20 and establish a conductive connection. Next, thermally conductive adhesive 80 is injected into the accommodating cavity 101 through a portion of the through-holes 103, while the other portion of the through-holes 103 is used for venting, making it easier for the thermally conductive adhesive 80 to be injected into the accommodating cavity 101 until the thermally conductive adhesive 80 fills the gaps in the accommodating cavity 101 located around the first heat dissipation layer 40. Then, the second heat dissipation layer 50 is stacked on the lower surface of the ceramic body 10, and the heat dissipation aluminum plate 60 is placed on the lower surface of the second heat dissipation layer 50. Finally, the reinforcing frame 14 is placed around the periphery of the ceramic body 10.

[0045] In use, the conductive line 20 is connected to the external line. After power is applied, the semiconductor chip 70 starts to work. During operation, the heat generated by the semiconductor chip 70 is transferred to the heat dissipation aluminum plate 60 through the first heat dissipation layer 40, the heat conduction pillar 90, and the second heat dissipation layer 50 for rapid heat dissipation. The heat in the accommodating cavity 101 is transferred to the heat dissipation aluminum plate 60 through the thermal conductive adhesive 80 and the second heat dissipation layer 50 for rapid heat dissipation. Then, the heat is rapidly diffused to the outside through the side of the heat dissipation aluminum plate 60 and multiple heat dissipation holes 61, achieving a good heat dissipation effect.

[0046] The key design feature of this utility model is:

[0047] By placing a first heat dissipation layer on the inner bottom surface of the accommodating cavity and connecting it to the upper ends of multiple heat-conducting pillars, placing a second heat dissipation layer on the lower surface of the ceramic body and connecting it to the lower ends of multiple heat-conducting pillars, and placing a heat dissipation aluminum plate on the lower surface of the second heat dissipation layer, along with thermally conductive adhesive, this ceramic substrate structure effectively achieves heat dissipation. The heat generated by the semiconductor chip is sequentially transferred through the first heat dissipation layer, the heat-conducting pillars, and the second heat dissipation layer to the heat dissipation aluminum plate for rapid cooling. Similarly, the heat in the accommodating cavity is sequentially transferred through the thermally conductive adhesive and the second heat dissipation layer to the heat dissipation aluminum plate for rapid cooling. This significantly improves thermal conductivity, enhances the product's heat dissipation performance, prevents the semiconductor chip from overheating during operation, ensures the performance of the semiconductor chip, extends the product's lifespan, enhances safety during use, provides convenience for users, improves product quality, makes the product more competitive, and meets current needs.

[0048] The above description is merely a preferred embodiment of the present utility model and does not constitute any limitation on the technical scope of the present utility model. Therefore, any minor modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model shall still fall within the scope of the technical solution of the present utility model.

Claims

1. A high heat dissipating semiconductor chip ceramic substrate, characterized by: The device includes a ceramic body, conductive lines, a waterproof sealing ring, a first heat dissipation layer, a second heat dissipation layer, and a heat dissipation aluminum plate. The ceramic body contains a cavity adapted to accommodate a semiconductor chip. An inlet for introducing the semiconductor chip is located on the upper surface of the ceramic body, above and communicating with the cavity. The inlet is coaxial with the cavity, and its inner diameter is smaller than that of the cavity. A through-hole for venting and injecting thermally conductive adhesive is located on the lower surface of the ceramic body, communicating with the cavity. Multiple [other components are also present on the lower surface of the ceramic body]. A plurality of heat-conducting holes are connected to the accommodating cavity, and each heat-conducting hole contains a heat-conducting pillar; a conductive circuit is disposed within the ceramic body, and the conductive circuit has multiple pads, all of which are located on the inner bottom surface of the accommodating cavity; a waterproof sealing ring is fitted around the periphery of the inlet and seals against the outer wall of the semiconductor chip; a first heat dissipation layer is disposed on the inner bottom surface of the accommodating cavity and connected to the upper ends of the plurality of heat-conducting pillars; a second heat dissipation layer is disposed on the lower surface of the ceramic body and connected to the lower ends of the plurality of heat-conducting pillars; and a heat dissipation aluminum plate is disposed on the lower surface of the second heat dissipation layer.

2. The high heat dissipating semiconductor chip ceramic substrate according to claim 1, wherein: The ceramic body includes a lower ceramic layer and an upper ceramic layer; the aforementioned conductive lines are formed on the upper surface of the lower ceramic layer, the through holes and heat-conducting holes are disposed on the lower ceramic layer, the first heat dissipation layer is disposed on the upper surface of the lower ceramic layer, and the second heat dissipation layer is disposed on the lower surface of the lower ceramic layer; the upper ceramic layer is stacked and fixed on the upper surface of the lower ceramic layer, and a cavity is recessed on the lower surface of the upper ceramic layer. The lower ceramic layer seals the opening of the cavity to form the aforementioned receiving cavity, and the aforementioned inlet is disposed on the upper surface of the upper ceramic layer.

3. The high heat dissipating semiconductor chip ceramic substrate according to claim 2, wherein: The upper ceramic layer and the lower ceramic layer are bonded together by an adhesive layer.

4. The high heat dissipating semiconductor chip ceramic substrate according to claim 2, wherein: The upper and lower ceramic layers are surrounded by a reinforcing frame, the lower end of which is located on the periphery of the heat dissipation aluminum plate, and the reinforcing frame is made of carbon fiber.

5. The high heat dissipating semiconductor chip ceramic substrate according to claim 1, wherein: The heat dissipation aluminum plate has multiple horizontally arranged heat dissipation through holes.

6. The high heat dissipating semiconductor chip ceramic substrate according to claim 1, wherein: The inlet is provided with an annular positioning groove around its periphery, and the waterproof sealing ring is provided with an annular positioning protrusion, which is positioned in the annular positioning groove.

7. The high heat dissipating semiconductor chip ceramic substrate according to claim 6, wherein: The waterproof sealing ring has an E-shaped cross-section.

8. The high heat dissipating semiconductor chip ceramic substrate according to claim 1, wherein: The ceramic body is made of aluminum nitride.

9. The high heat dissipating semiconductor chip ceramic substrate according to claim 1, wherein: The first and second heat dissipation layers are made of graphene.

10. The high heat dissipating semiconductor chip ceramic substrate according to claim 1, wherein: The heat-conducting pillar is made of graphene.

Images