Laser device

Abstract

The utility model provides a laser device, which comprises a ceramic substrate, a laser chip, a metal die bonding table and a metal wire bonding table, wherein the metal die bonding table and the metal wire bonding table are arranged on the same surface of the ceramic substrate and are spaced from each other; wherein the metal die bonding table and the metal wire bonding table are electrically connected to different electrodes of the laser device, the metal die bonding table is provided with a table board perpendicular to the face of the ceramic substrate, the laser chip is fixedly welded to the table board, one electrode of the laser chip is electrically connected with the metal die bonding table, and the other electrode of the laser chip is electrically connected with the metal wire bonding table. Wherein the other electrode of the laser chip is connected to the metal bonding wire table through a bonding wire, so that the metal die bonding table serves as a thermal buffer heat sink for instantaneous high power of the laser chip and also serves as an electrode for electrical connection of the laser chip.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor laser devices, and in particular to a laser device. Background Technology

[0002] Laser diodes, as important light-emitting components, are widely used in optical communication, laser processing, and everyday education, among other fields. Due to the unique characteristics of laser diode light emission and its high instantaneous power, most existing laser devices are packaged in TO (Top-Order) packages. Figure 1 As shown, the structure of a typical existing laser device is illustrated, which includes a socket 101, a laser chip 103, a heat sink 104, a negative electrode pin 105, a positive electrode pin 106, and a gold wire 107. The laser chip 103 and the heat sink 104 are mounted on the vertical surface of the socket via eutectic bonding. The conventional laser assembly socket has three pins: one ground pin, and the other two pins on the left and right are the laser positive electrode pin 106 and the negative electrode pin 105. The laser chip 103 is connected to the positive electrode pin via the gold wire. The gold wire 107 is connected to the negative pin 105 and the positive pin 106. The socket 101 is made of metal. An isolation component needs to be set between the laser chip 103 and the vertical surface of the socket. When bonding wires, additional steps such as rotating the packaging bracket are required to vertically bend the gold wire 107 to connect the negative pin 105 and the positive pin 106. This not only makes the packaging process complicated, but also only allows for single-tube packaging with a long single-tube packaging cycle, resulting in low overall packaging efficiency and difficulty in meeting the needs of mass production and large-scale production.

[0003] Meanwhile, the heat dissipation path of existing laser devices is relatively simple. The instantaneous power of laser chips is large, and the heat generated is difficult to dissipate effectively and quickly. Excessive temperature will affect the performance and reliability of the chip, and may even cause device failure.

[0004] Furthermore, existing laser devices use through-hole pins, which cannot adapt to the surface mount technology widely used in modern electronic manufacturing. With the trend of miniaturization and high-density integration in today's electronic products, the traditional packaging structure of laser devices makes it impossible to effectively reduce production difficulty and cost, and limits the application of laser devices on complex circuit boards. Utility Model Content

[0005] One objective of this invention is to provide a laser device in which the die-bonding surface and the wire-bonding surface are nearly flush, thus eliminating the need for complex processes during wire bonding and improving production efficiency.

[0006] Another objective of this invention is to provide a laser device, wherein the laser device is suitable for being mounted in a patch manner, which facilitates the application of the laser device.

[0007] Another objective of this invention is to provide a laser device that can quickly dissipate the heat generated by a chip, thereby ensuring the chip's performance and reliability.

[0008] Another objective of this invention is to provide a laser device that is suitable for mass production in a connected form with high packaging efficiency.

[0009] Another objective of this invention is to provide a laser device, wherein the laser device includes a ceramic substrate, a laser chip, and a metal die bonder and a metal wire bonder disposed on the same side of the ceramic substrate and spaced apart from each other, wherein the metal die bonder and the metal wire bonder are electrically connected to different electrodes of the laser device, wherein the metal die bonder has a mesa perpendicular to the surface of the ceramic substrate, wherein the laser chip is bonded to the mesa, and one electrode of the laser chip is electrically connected to the metal die bonder, wherein the other electrode of the laser chip is connected to the metal wire bonder via a wire bond.

[0010] Another objective of this invention is to provide a laser device in which the metal wire bonding station has a wire bonding surface, wherein the wire bonding surface is flush with the station surface, thereby facilitating the wire bonding of the laser chip without the need for rotation or other methods, which is beneficial for the mass production of the laser device.

[0011] Another objective of this invention is to provide a laser device in which a laser chip is soldered to the mesa, and one electrode of the laser chip is electrically connected to the metal die bond, thereby eliminating the need to connect one electrode of the laser chip to the corresponding electrode of the laser device via additional wire bonding, which is beneficial to improving the production efficiency of the laser device.

[0012] Another objective of this invention is to provide a laser device in which the laser chip is soldered to the metal die bonder, thereby enabling high-speed heat dissipation based on the metal. The metal die bonder can act as a heat buffer and heat sink for the instantaneous high-power laser chip, and can quickly dissipate the heat generated by the laser chip to ensure the performance and stability of the laser chip.

[0013] Another objective of this invention is to provide a laser device, wherein the other side of the ceramic substrate is provided with two pads, one of which is electrically connected to the metal die bonder and the other of which is electrically connected to the metal wire bonder, wherein the laser device is adapted to be mounted on a corresponding circuit board based on the two pads, which facilitates the application of the laser device and promotes the miniaturization of the device.

[0014] Another objective of this invention is to provide a laser device, wherein the ceramic substrate is further provided with a housing mounting stage on one side, wherein the housing mounting stage is disposed around the metal die bond stage and the metal wire bond stage and is isolated from the metal die bond stage and the metal wire bond stage, wherein the laser device includes a housing, wherein the housing is mounted on the housing mounting stage and is capable of conducting heat dissipation based on the housing mounting stage.

[0015] Another objective of this invention is to provide a laser device, wherein the laser device is based on a ceramic substrate supporting a metal die bonder, a metal wire bonder, and a housing mounting platform, and the ceramic substrate is used as a housing. Based on the insulating properties of ceramic, the metal die bonder can be directly used as an electrode of the laser device. Thus, while the laser chip is bonded to the metal die bonder, it can also be electrically connected to the metal die bonder to achieve the corresponding electrode connection. Furthermore, there is no need to set an isolation device between the laser chip and the metal die bonder, which is beneficial for the heat dissipation of the laser chip based on the metal die bonder.

[0016] Another objective of this invention is to provide a laser device in which a heat sink is provided on the other side of the ceramic substrate, and the housing mounting platform is electrically connected to the heat sink to increase the heat dissipation area and improve the heat dissipation efficiency.

[0017] Another objective of this invention is to provide a laser device in which the volume of the metal die bonder is larger than the volume of the metal wire bonder, thereby improving the heat dissipation capacity of the laser chip based on the larger volume of the metal die bonder.

[0018] Another objective of this invention is to provide a laser device in which the vertical projection of the metal die bonder and the metal wire bonder onto the ceramic substrate constitutes an area. The vertical projection area of ​​the metal die bonder onto the ceramic substrate is greater than or equal to 3 / 4 of the total area, thereby improving the heat dissipation performance of the device based on the larger area and ensuring that the heat from the laser chip can be dissipated. Simultaneously, the relatively small size of the metal wire bonder satisfies the precision requirements of gold wire bonding while avoiding the impact of excessive size on the overall structural compactness and packaging efficiency. Based on the reasonable size ratio of the metal die bonder and the metal wire bonder, the defects of traditional packaging structures in the wire bonding stage are overcome, and efficient heat dissipation is provided for the laser chip.

[0019] Another objective of this invention is to provide a laser device, wherein the manufacturing method of the laser device forms a plurality of metal die bonding stations and metal wire bonding stations on a ceramic substrate, and places the ceramic substrate on a special fixture to complete the chip fixing and wire bonding. After the casing is completed, the ceramic substrate is then cut, and thus mass production is carried out in the form of connected plates, thereby improving the production efficiency of the laser device.

[0020] According to one aspect of the present invention, a laser device is provided, wherein the laser device comprises:

[0021] A ceramic substrate;

[0022] A metal die bonder, wherein the metal die bonder is disposed on one side of the ceramic substrate and has a platform perpendicular to that side of the ceramic substrate.

[0023] A metal wire bonding station, wherein the metal wire bonding station and the metal die bonding station are disposed on the same side of the ceramic substrate at a distance from each other, wherein the metal die bonding station and the metal wire bonding station are electrically connected to different electrodes of the laser device; and

[0024] A laser chip, wherein the laser chip is soldered to the mesa, and one electrode of the laser chip is electrically connected to the metal die bonder, wherein the other electrode of the laser chip is connected to the metal wire bonder via a wire bond.

[0025] In one embodiment, the metal wire bonding station has a bonding surface perpendicular to the surface of the ceramic substrate, wherein the station surface and the bonding surface are parallel.

[0026] In one embodiment, the platform and the wire bonding surface are flush.

[0027] In one embodiment, the other side of the ceramic substrate is provided with two pads, one of which is electrically connected to the metal die bond station and the other of which is electrically connected to the metal wire bond station, wherein the laser device is adapted to be mounted on a corresponding circuit board based on the two pads.

[0028] In one embodiment, the two pads are electrically connected to the metal die bond station and the metal wire bond station respectively via metallized vias.

[0029] In one embodiment, the ceramic substrate is further provided with a housing mounting stage on this side, wherein the housing mounting stage is disposed around the metal die bond stage and the metal wire bond stage and is isolated from the metal die bond stage and the metal wire bond stage, wherein the laser device includes a housing, wherein the housing is mounted on the housing mounting stage.

[0030] In one embodiment, the other side of the ceramic substrate is provided with a heat sink, and the housing mounting platform is electrically connected to the heat sink.

[0031] In one embodiment, the heat sink is electrically connected to the housing mounting platform via a metallized through-hole.

[0032] In one embodiment, the volume of the metal die bond stage is larger than the volume of the metal wire bond stage.

[0033] In one embodiment, the vertical projection of the metal die bonder and the metal wire bonder onto the ceramic substrate is defined as an occupied area, wherein the vertical projection area of ​​the metal die bonder onto the ceramic substrate is greater than or equal to 3 / 4 of the occupied area.

[0034] The further objectives and advantages of this invention will become fully apparent from the following description and accompanying drawings. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of a typical existing laser device.

[0036] Figure 2 This is a partial structural schematic diagram of a laser device according to an embodiment of the present invention.

[0037] Figure 3 This is a partial structural schematic diagram of the laser device according to the above embodiments of the present invention.

[0038] Figure 4 This is a partial structural schematic diagram of the laser device according to the above embodiments of the present invention.

[0039] Figure 5 This is a schematic diagram showing the disassembled structure of the laser device according to the above embodiments of the present invention.

[0040] Figure 6 This is a schematic diagram of the connecting plate structure of the laser device according to the above embodiments of the present invention.

[0041] Figure 7 This is a schematic diagram of the laser device according to the above embodiments of the present invention in a connected board state when preparing to weld chips.

[0042] Figure 8 This is a schematic diagram of the laser device according to the above embodiments of the present invention after the chip has been soldered in the interconnect state.

[0043] Figure 9 This is a schematic diagram of the laser device according to the above embodiment of the present invention in the connected plate state after the tube shell is sealed.

[0044] Figure 10 This is a schematic diagram of the structure of the laser device according to the above embodiments of the present invention after being cut.

[0045] Figure 11 This is a partial structural diagram of a fixture used in the production process of the laser device according to the above embodiments of the present invention.

[0046] Figure 12 This is a schematic diagram of the structure of the laser device according to the above embodiments of the present invention, which is welded using multiple rows of connecting plates during the production process. Detailed Implementation

[0047] The following description is intended to disclose the present invention so that those skilled in the art can implement it. The preferred embodiments described below are merely examples, and other obvious variations will occur to those skilled in the art. The basic principles of the present invention defined in the following description can be applied to other embodiments, modifications, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the present invention.

[0048] Those skilled in the art should understand that, in the disclosure of this utility model, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limitations on this utility model.

[0049] It is understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element can be multiple, and the term "a" should not be understood as a limitation on the number.

[0050] Refer to the accompanying drawings in the specification of this utility model. Figures 2 to 5As shown, a laser device 100 according to an embodiment of the present invention is illustrated. The laser device 100 includes a ceramic substrate 10, a laser chip 30, and a metal die bonder 21 and a metal wire bonder 22 disposed on the same surface 11 of the ceramic substrate 10 and spaced apart from each other. The metal die bonder 21 and the metal wire bonder 22 are electrically connected to different electrodes of the laser device 100. The metal die bonder 21 has a mesa 211 perpendicular to the surface 11 of the ceramic substrate 10. The laser chip 30 is bonded to the mesa 211, and one electrode of the laser chip 30 is electrically connected to the metal die bonder 21. The other electrode of the laser chip 30 is connected to the metal wire bonder 22 via a wire bond 31.

[0051] It is worth mentioning that the metal bonding station 21 has a bonding surface 221 parallel to the station surface 211, which facilitates the bonding of the laser chip 30.

[0052] Preferably, the bonding surface 221 is flush with the table surface 211, so that no rotation or other steps are required during bonding.

[0053] It is worth mentioning that the laser chip 30 is soldered to the platform 211, and one electrode of the laser chip 30 is electrically connected to the metal die bonding platform 21, so that it is not necessary to connect one electrode of the laser chip 30 to the corresponding electrode of the laser device 100 by additional wire bonding, which helps to improve the production efficiency of the laser device 100.

[0054] Specifically, the laser chip 30 is soldered to the metal die bonder 21, thereby enabling high-speed heat dissipation based on the metal. The metal die bonder 21 can act as a heat buffer and heat sink for the instantaneous high power of the laser chip 30, and can quickly dissipate the heat generated by the laser chip 30 to ensure the performance and stability of the laser chip 30.

[0055] It is worth mentioning that the volume of the metal die bonding stage 21 is larger than that of the metal wire bonding stage 22, so as to improve the heat dissipation capacity of the laser chip 30 based on the larger volume of the metal die bonding stage 21.

[0056] Specifically, the area occupied by the metal die bonder 21 and the metal wire bonder 22 on the ceramic substrate 10 is defined as the vertical projection of the metal die bonder 21 onto the ceramic substrate 10. The vertical projection area of ​​the metal die bonder 21 onto the ceramic substrate 10 is greater than or equal to 3 / 4 of the occupied area. This larger area improves the heat dissipation performance of the device, ensuring that the heat of the laser chip 30 can be dissipated. At the same time, the relatively small size of the metal wire bonder 22 meets the precision requirements of gold wire bonding while avoiding the impact of excessive size on the overall compactness and packaging efficiency. Based on the reasonable size ratio of the metal die bonder 21 and the metal wire bonder 22, the defects of traditional packaging structures in the wire bonding process are overcome, and efficient heat dissipation is provided for the laser chip 30.

[0057] Furthermore, the other side 12 of the ceramic substrate 10 is provided with two pads 24 and 25, wherein one pad 24 is electrically connected to the metal die bonder 21 and the other pad 25 is electrically connected to the metal wire bonder 22, wherein the laser device 100 is adapted to be mounted on a corresponding circuit board based on the two pads 24 and 25, which facilitates the application of the laser device 100 and promotes the miniaturization of the device.

[0058] Specifically, in this embodiment of the present invention, the pad 24 is set as a negative pad and the pad 25 is set as a positive pad. Corresponding to the state in which the laser device 100 is mounted on the corresponding circuit board, the metal die bond station 21 is the negative electrode and the metal wire bond station 22 is the positive electrode. Then, the positive electrode of the laser chip 30 is electrically connected to the wire bond surface 221 through the wire bond 31, and the negative electrode of the laser chip 30 is electrically connected to the metal die bond station 21.

[0059] It is worth mentioning that the surface 11 of the ceramic substrate 10 is further provided with a housing mounting stage 23, wherein the housing mounting stage 23 is surrounding the metal die bond stage 21 and the metal wire bond stage 22 and is isolated from the metal die bond stage 21 and the metal wire bond stage 22, wherein the laser device 100 includes a housing 40, wherein the housing 40 is mounted on the housing mounting stage 23 and can conduct heat dissipation based on the housing mounting stage 23, wherein the housing 40 has an emission window, wherein the emission window is located in the laser path of the laser chip 30, and the emission window is provided with a glass plate or a fast and slow axis lens.

[0060] Specifically, this invention uses the ceramic substrate 10 to support the metal die bonder 21, the metal wire bonding station 22, and the housing mounting station 23, using the ceramic substrate 10 as a housing. Based on the insulating properties of ceramics, the metal die bonder 21 can be directly used as an electrode of the laser device 100. Thus, while the laser chip 30 is bonded to the metal die bonder 21, it can also be electrically connected to the metal die bonder 21 to achieve the corresponding electrode connection. Furthermore, there is no need to set an isolation device between the laser chip 30 and the metal die bonder 21, which is beneficial for the heat dissipation of the laser chip 30 based on the metal die bonder 21.

[0061] Furthermore, the other side 12 of the ceramic substrate 10 is provided with a heat sink 26, and the tube housing mounting platform 23 is electrically connected to the heat sink 26 to increase the heat dissipation area and improve the heat dissipation efficiency.

[0062] It is worth mentioning that in this utility model, the laser device 100 uses metallized vias to electrically connect the metal die bond station 21 and the pad 24, the wiring metal 22 and the pad 25, the housing mounting station 23 and the heat sink 26. Specifically, the metallized via is a solid metal pillar.

[0063] Specifically, the ceramic substrate 10 is selected from oxide ceramics, nitride ceramics, carbide ceramics, and boride ceramics. The metal die bonder 21, the metal wire bonder 22, and the housing mounting stage 23 are made of copper and are disposed on the ceramic substrate 10 using one of the following processes: DPC, DBC, and AMB. The surfaces of the metal die bonder 21, the metal wire bonder 22, and the housing mounting stage 23 are plated with gold, nickel, or nickel-palladium-gold. The laser chip 10 is bonded to the mesa 211 using a high thermal conductivity solder, such as silver paste, low-temperature sintered nano-silver, or eutectic solder.

[0064] Furthermore, the laser device 100 is suitable for mass production in a connected plate configuration, resulting in high packaging efficiency. Specifically, this invention also provides a method for manufacturing a laser device, wherein a plurality of metal die bonders 21 and metal wire bonders 22 are formed on the ceramic substrate 10, and the ceramic substrate 10 is placed on a special fixture to complete the chip fixing and wire bonding. After the casing is completed, the ceramic substrate is then cut, thus enabling mass production in a connected plate configuration, thereby improving the production efficiency of the laser device 100.

[0065] Please refer to the accompanying drawings in the specification of this utility model for details. Figures 6 to 9 The method for manufacturing the laser device includes the following steps:

[0066] A. A plurality of metals are connected to a plate on one side 11 of a ceramic substrate 10, wherein each metal group includes a metal die bonder 21 and a metal wire bonder 22 spaced apart from each other, wherein the metal die bonder 21 has a plate 211 perpendicular to the surface 11 of the ceramic substrate 10.

[0067] B. Multiple pairs of pads 24 and 25 are provided on the other side 12 connecting plate of the ceramic substrate 10, and one of the pads 21 in each pair of pads 24 and 25 is electrically connected to the metal die bond stage 21 of a group of metals, and the other pad 25 is electrically connected to the metal wire bond stage 22 of the same group of metals.

[0068] C. Fix the ceramic substrate 10 with a clamp 210 so that the mesa 211 faces upward;

[0069] D. A laser chip 30 is soldered to the platform 211, and one electrode of the laser chip 30 is electrically connected to the metal die bonding platform 21, and the other electrode of the laser chip 30 is soldered to the metal wire bonding platform 22 via wire bonding.

[0070] In other words, the manufacturing method of the laser device first forms a laser device connecting plate 200, and then performs batch welding of chips on the connecting plate, thereby effectively improving production efficiency. It is worth mentioning that in this utility model, the metal wire bonding station 22 has a wire bonding surface 221 parallel to the table surface 211, and the wire bonding surface 221 is preferably flush with the table surface 211. During the welding process, thanks to the flush table surface 211 and the wire bonding surface 221, there is no need to flip the chip when welding. Therefore, the laser device connecting plate 200 can be fixedly placed to perform wire bonding operations, effectively improving efficiency and enabling mass production.

[0071] Specifically, refer to Figure 7 and Figure 11 The fixture 210 used in step C includes a base 201 and a clamping platform 202 extending from one side of the base 201. The clamping platform 202 has at least one clamping groove 2021 and a plurality of support grooves 2022 communicating with the clamping groove 2021. The support grooves 2022 match the metal die bonder 21 and the metal wire bonder 22 so that when the ceramic substrate 10 is inserted into the clamping groove 2021, the support grooves 2022 support the side of the metal die bonder 21 opposite to the platform surface 211 and the side of the metal wire bonder 22 opposite to the wire bonder surface 221, thereby clamping and fixing the laser device connector 200 so as to weld the laser chip 30 to the platform surface 211 and connect the laser chip 30 to the wire bonder surface 221.

[0072] Specifically, step A further includes the step of: setting a housing mounting platform 23 around each group of metals on the surface 11 of the ceramic substrate 10 for mounting the corresponding housing.

[0073] Further, refer to Figure 9 The manufacturing method of the laser device further includes step E, which involves sealing a housing 40 onto each of the housing mounting platforms 23. The housing 40 is capable of conducting heat dissipation based on the housing mounting platform 23. The housing 40 has a emission window located in the laser path of the laser chip 30, and the emission window is equipped with a glass plate or a fast / slow axis lens.

[0074] After the casing 40 is sealed, the laser device connecting plate 200 is then cut. The manufacturing method of the laser device further includes step F: cutting the ceramic substrate 10 to obtain... Figure 10 The laser device 100 shown.

[0075] In other words, during the production process, the laser device 100 can be mass-produced and finally divided to obtain multiple laser devices 100.

[0076] Specifically, during the production process, the step of simultaneously welding chips is not limited to a single laser device board 200, such as... Figure 12 The fixture 210 can hold multiple rows of laser device connecting plates 200, and the multiple rows of laser device connecting plates 200 are welded by mechanical automation, thereby improving the production efficiency of the laser device 100.

[0077] It is worth mentioning that step B further includes the step of: providing a heat sink 26 on the other side 12 of the ceramic substrate 10, and electrically connecting the heat sink 26 and the tube housing mounting platform 23 by means of metallized through holes, so as to increase the heat dissipation area of ​​the tube housing mounting platform 23 and improve the heat dissipation efficiency.

[0078] Specifically, in step A, the metal disposed on the ceramic substrate 10 is copper. In step A, copper is electroplated or brazed onto the ceramic substrate 10 using one of the following processes: DPC process, DBC process, and AMB process, to obtain the metal die bond station 21, the metal wire bond station 22, and the casing mounting station 23.

[0079] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0080] Those skilled in the art should understand that the embodiments of the present invention described above and shown in the accompanying drawings are merely examples and do not limit the present invention. The purpose of the present invention has been fully and effectively achieved. The function and structural principle of the present invention have been shown and explained in the embodiments. Without departing from the described principle, the implementation of the present invention may have any variations or modifications.

Claims

1. A laser device, characterized in that, include: A ceramic substrate; A metal die bonder, wherein the metal die bonder is disposed on one side of the ceramic substrate and has a platform perpendicular to that side of the ceramic substrate. A metal wire bonding station, wherein the metal wire bonding station and the metal die bonding station are disposed on the same side of the ceramic substrate at a distance from each other, wherein the metal die bonding station and the metal wire bonding station are electrically connected to different electrodes of the laser device; and A laser chip, wherein the laser chip is soldered to the mesa, and one electrode of the laser chip is electrically connected to the metal die bonder, wherein the other electrode of the laser chip is connected to the metal wire bonder via a wire bond.

2. The laser device according to claim 1, wherein the metal bonding station has a bonding surface perpendicular to the surface of the ceramic substrate, wherein the station surface and the bonding surface are parallel.

3. The laser device according to claim 2, wherein the mesa and the bonding wire surface are flush.

4. The laser device according to claim 3, wherein the other side of the ceramic substrate is provided with two pads, wherein one pad is electrically connected to the metal die bonder and the other pad is electrically connected to the metal wire bonder, wherein the laser device is adapted to be mounted on a corresponding circuit board based on the two pads.

5. The laser device according to claim 4, wherein the two pads are electrically connected to the metal die bond station and the metal wire bond station respectively through metallized vias.

6. The laser device according to claim 5, wherein the ceramic substrate is further provided with a housing mounting stage on this side, wherein the housing mounting stage is disposed around the metal die bond stage and the metal wire bond stage and is isolated from the metal die bond stage and the metal wire bond stage, wherein the laser device includes a housing, wherein the housing is mounted on the housing mounting stage.

7. The laser device of claim 6, wherein the other side of the ceramic substrate is provided with a heat sink, and wherein the housing mounting stage is electrically connected to the heat sink.

8. The laser device according to claim 7, wherein the heat sink is electrically connected to the housing mounting platform through a metallized through-hole.

9. The laser device according to claim 1, wherein the volume of the metal die bonding stage is larger than the volume of the metal wire bonding stage.

10. The laser device of claim 9, wherein the vertical projection of the metal die bonder and the metal wire bonder onto the ceramic substrate is defined as an occupied area, wherein the vertical projection area of ​​the metal die bonder onto the ceramic substrate is greater than or equal to 3 / 4 of the occupied area.

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