Driving circuit with low propagation delay and high isolation voltage

Abstract

The utility model discloses a drive circuit with low propagation delay and high isolation voltage, which relates to the technical field of power electronics, and comprises a signal input branch, an isolation device, a signal output branch, a power amplification circuit and a drive output branch, the signal input branch comprises a PWM (Pulse Width Modulation) input end and a filter circuit; the isolation device is a TLP152, a pin 1 and a pin 3 of the input end of the isolation device receive filtered PWM signals, a pin 5 of the output end of the isolation device outputs isolated signals, and the isolation device is connected to the output end of the filter circuit and used for achieving electrical isolation between input signals and output signals; the signal output branch circuit comprises a vibration damping branch circuit and a parasitic parameter removing branch circuit. And the power amplification circuit comprises a high-power tube Q1 which is a high-power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), so that the driving circuit has the characteristics of low propagation delay and high isolation voltage.

Description

Technical Field

[0001] This utility model relates to the field of power electronics technology, and in particular to a low propagation delay and high isolation voltage drive circuit. Background Technology

[0002] This invention relates to a drive circuit with low propagation delay and high isolation voltage. In power electronic systems, the drive circuit plays a crucial role. It needs to convert control signals into level signals capable of driving semiconductor devices. However, as power electronic systems develop towards higher frequencies and higher power densities, the performance requirements for drive circuits are also increasing. In particular, propagation delay and isolation voltage are two indicators that directly affect the system's efficiency and stability.

[0003] Excessive propagation delay slows down system response and affects dynamic performance; while insufficient isolation voltage can cause the drive circuit to fail under high voltage conditions, even jeopardizing the safety of the entire system. Therefore, developing a drive circuit with low propagation delay and high isolation voltage is of paramount importance. Utility Model Content

[0004] The purpose of this invention is to address the shortcomings of existing technologies by proposing a low propagation delay and high isolation voltage driving circuit.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A low propagation delay and high isolation voltage drive circuit includes a signal input branch, an isolation device, a signal output branch, a power amplifier circuit, and a drive output branch. The signal input branch includes a PWM input terminal and a filter circuit. The isolation device is a TLP152. Pins 1 and 3 of the input terminal of the isolation device receive the filtered PWM signal, and pin 5 of the output terminal of the isolation device outputs the isolated signal. The isolation device is connected to the output terminal of the filter circuit. The signal output branch includes a vibration damping branch and a parasitic parameter removal branch. The power amplifier circuit includes a high-power transistor Q1, which is a high-power MOSFET.

[0007] Preferably, the PWM input terminal is connected to an external PWM signal via interface U3, which is a two-pin interface.

[0008] Preferably, the filter circuit includes a resistor R3 and a capacitor C1. The resistor R3 is connected to pin 1 of the interface U3 and the isolation device, and the capacitor C1 is connected to pin 1 and pin 2 of the interface U3.

[0009] Preferably, the port of the drive output branch is interface U2, which is a two-pin interface. One end of the output of interface U2 is connected to the power supply VCC, and the other end is connected to the drain of the high-power transistor Q1.

[0010] Preferably, the vibration damping branch consists of a diode U4 and a resistor R1. The diode U4 is connected between the gate of the high-power transistor Q1 and pin 5 of the output terminal of the isolation device, and works in conjunction with the resistor R1.

[0011] Preferably, the parasitic parameter removal branch includes a resistor R2, one end of which is connected to the gate of the high-power transistor Q1, and the other end is grounded.

[0012] Preferably, the high-power transistor Q1 includes a gate, a source, and a drain. The gate of the high-power transistor Q1 is connected to the cathode of the diode U4 through a resistor R1, and the source of the high-power transistor Q1 is grounded through a resistor R2.

[0013] Furthermore, compared to the prior art, the advantages of this utility model are as follows:

[0014] 1. This drive circuit uses the high-speed isolation device TLP152. This isolation device has extremely low propagation delay, which can ensure that the control signal is transmitted to the gate or base of the semiconductor device quickly and accurately.

[0015] 2. By optimizing the circuit design, parasitic parameters (such as inductance and capacitance) on the signal path can be reduced, further reducing propagation delay.

[0016] 3. Select isolation devices with high isolation voltage to ensure that the drive circuit can work stably under high voltage environment. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a low propagation delay and high isolation voltage driving circuit proposed in this utility model.

[0018] 1 Signal input branch, 11 PWM input terminal, 12 Filter circuit, 2 Isolation device, 3 Signal output branch, 31 Vibration damping branch, 32 Parasitic parameter removal branch, 4 Power amplifier circuit, 5 Drive output branch. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments.

[0020] like Figure 1As shown, a low propagation delay and high isolation voltage drive circuit includes a signal input branch 1, an isolation device 2, a signal output branch 3, a power amplifier circuit 4, and a drive output branch 5. The signal input branch 1 includes a PWM input terminal 11 and a filter circuit 12. The isolation device 2 is a TLP152. Pins 1 and 3 of the input terminal of the isolation device 2 receive the filtered PWM signal, and pin 5 of the output terminal of the isolation device 2 outputs the isolated signal. The isolation device 2 is connected to the output terminal of the filter circuit 12. The signal output branch 3 includes a vibration damping branch 31 and a parasitic parameter removal branch 32. The power amplifier circuit 4 includes a high-power transistor Q1, which is a high-power MOSFET.

[0021] The PWM input terminal 11 is connected to an external PWM signal via interface U3, which is a two-pin interface to ensure the stability and reliability of the input signal.

[0022] The filter circuit 12 includes a resistor R3 and a capacitor C1. The resistor R3 is connected to pin 1 of the interface U3 and the isolation device 2. The capacitor C1 is connected to pin 1 and pin 2 of the interface U3. The filter circuit is used to filter out high-frequency noise in the input signal.

[0023] The port of the drive output branch 5 is interface U2. Interface U2 is a two-pin interface. One end of interface U2 is connected to the power supply VCC, and the other end is connected to the drain of the high-power transistor Q1. Interface U2 can not only provide a stable power connection, but also ensure the efficient driving and stability of the output signal, and at the same time has the function of a complete protection circuit.

[0024] The vibration damping branch 31 consists of a diode U4 and a resistor R1. The diode U4 is connected between the gate of the high-power transistor Q1 and pin 5 of the output terminal of the isolation device 2. Together with the resistor R1, it is used to absorb the oscillation signal in the circuit.

[0025] The parasitic parameter removal branch 32 includes a resistor R2. One end of the resistor R2 is connected to the gate of the high-power transistor Q1, and the other end is grounded. This can effectively remove the influence of parasitic parameters on circuit performance, improve the stability and reliability of the circuit, and at the same time protect the gate of the high-power transistor Q1 and extend the service life of the device.

[0026] The high-power transistor Q1 includes a gate, a source, and a drain. The gate of the high-power transistor Q1 is connected to the cathode of the diode U4 through a resistor R1, and the source of the high-power transistor Q1 is grounded through a resistor R2. The isolated signal is transmitted to the power amplifier circuit, which amplifies the isolated signal to drive the gate of the semiconductor device.

[0027] The working process and principle of this utility model are as follows:

[0028] When the PWM signal is input through interface U3, it first passes through a filter circuit consisting of resistor R3 and capacitor C1 to remove high-frequency noise, ensuring a more stable signal entering the isolation device. The filtered signal is then sent to the input terminals Anode and Cathode of isolation device 2. Isolation device 2 electrically isolates the input and output signals, preventing electrical interference and noise in high-voltage environments from affecting the control signal.

[0029] The output signal then enters the damping branch 31, which consists of diode U4 and resistor R1. Diode U4 is connected between the gate of high-power transistor Q1 and the output terminal of isolation device 2, and works with resistor R1 to eliminate oscillation signals and ensure signal stability. Resistor R1 limits the current flowing through diode U4 to prevent excessive current from damaging the circuit. The stable signal eventually reaches the gate of high-power transistor Q1, controlling the conduction and cutoff of high-power transistor Q1.

[0030] The source of the high-power transistor Q1 is grounded through resistor R2. The function of resistor R2 is to eliminate the influence of parasitic parameters on circuit performance and ensure signal stability and reliability. At the same time, resistor R2 can prevent accidental activation due to static electricity or noise, ensuring that the high-power transistor Q1 remains in the off state when there is no drive signal.

[0031] The drain of the high-power transistor Q1 is connected to interface U2. Interface U2 is a two-pin interface, with one end connected to the power supply VCC and the other end connected to the drain of the high-power transistor Q1. This design ensures a stable power supply voltage at the output, while leveraging the efficient amplification function of the high-power transistor Q1. Finally, the drive signal is output through interface U2 and connected to external circuitry for effective circuit control.

[0032] Through reasonable component selection and connection methods, the entire circuit ensures stable signal transmission, high isolation, and low latency, while providing comprehensive protection functions, making it suitable for various application scenarios requiring high-voltage isolation and high-power drive.

[0033] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A low propagation delay and high isolation voltage driving circuit, comprising a signal input branch (1), an isolation device (2), a signal output branch (3), a power amplifier circuit (4), and a drive output branch (5), characterized in that: The signal input branch (1) includes a PWM input terminal (11) and a filter circuit (12); the isolation device (2) is a TLP152, and pins 1 and 3 of the input terminal of the isolation device (2) receive the filtered PWM signal, and pin 5 of the output terminal of the isolation device (2) outputs the isolated signal, and the isolation device (2) is connected to the output terminal of the filter circuit (12); the signal output branch (3) includes a vibration damping branch (31) and a parasitic parameter removal branch (32); the power amplifier circuit (4) includes a high-power transistor Q1, and the high-power transistor Q1 is a high-power MOSFET.

2. The low propagation delay and high isolation voltage driving circuit according to claim 1, characterized in that: The PWM input terminal (11) is connected to an external PWM signal via interface U3, which is a two-pin interface.

3. The low propagation delay and high isolation voltage driving circuit according to claim 2, characterized in that: The filter circuit (12) includes a resistor R3 and a capacitor C1. The resistor R3 is connected to pin 1 of the interface U3 and the isolation device (2). The capacitor C1 is connected to pin 1 and pin 2 of the interface U3.

4. The low propagation delay and high isolation voltage driving circuit according to claim 1, characterized in that: The port of the drive output branch (5) is interface U2. Interface U2 is a two-pin interface. One end of the output of interface U2 is connected to the power supply VCC, and the other end is connected to the drain of the high-power transistor Q1.

5. The low propagation delay and high isolation voltage driving circuit according to claim 1, characterized in that: The vibration damping branch (31) consists of a diode U4 and a resistor R1. The diode U4 is connected between the gate of the high-power transistor Q1 and pin 5 of the output terminal of the isolation device (2), and works in conjunction with the resistor R1.

6. The low propagation delay and high isolation voltage driving circuit according to claim 5, characterized in that: The parasitic parameter removal branch (32) includes a resistor R2, one end of which is connected to the gate of the high-power transistor Q1, and the other end is grounded.

7. The low propagation delay and high isolation voltage driving circuit according to claim 6, characterized in that: The high-power transistor Q1 includes a gate, a source, and a drain. The gate of the high-power transistor Q1 is connected to the cathode of the diode U4 through a resistor R1, and the source of the high-power transistor Q1 is grounded through a resistor R2.

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