Miniature light emitting diode device packaging module and display device

Abstract

The utility model provides a micro light-emitting diode device packaging module and a display device. A micro light-emitting diode chip of the packaging module comprises a plurality of pixel units arranged at intervals; the plurality of light-transmitting units are arranged on the light-emitting surface sides of the plurality of pixel units, the plurality of light-transmitting units and the plurality of pixel units are in one-to-one correspondence and are arranged at intervals, and part of light emitted by the pixel units and transmitted through the light-emitting surface penetrates through the light-transmitting units. A gap area is formed between every two adjacent light-transmitting units, the light-absorbing units are arranged on the light-emitting face sides of the pixel units, and each light-absorbing unit is arranged in one gap area and absorbs the other part of light emitted by the pixel units and transmitted through the light-emitting face. On the basis, the packaging module can reduce the light crosstalk phenomenon caused by reflection of light emitted by different pixel units at the light emitting surface.

Description

Technical Field

[0001] This application relates to the field of semiconductor light-emitting technology, specifically to a micro light-emitting diode device packaging module and display device. Background Technology

[0002] Micro-LED (Micro-Light Emitting Diode) display technology miniaturizes and arrays the traditional LED (Light Emitting Diode) structure, and uses CMOS (Complementary Metal Oxide Semiconductor) or TFT (Thin Film Transistor) to create the driving circuit, thereby achieving addressing control and individual driving of each pixel structure.

[0003] The display performance of Micro-LED display modules based on related technologies is not good, and there is room for improvement. Utility Model Content

[0004] The purpose of this application is to provide a miniature light-emitting diode (LED) device packaging module and a display device.

[0005] To address the aforementioned problems, in a first aspect, this application provides a miniature light-emitting diode (LED) device packaging module, comprising:

[0006] A miniature light-emitting diode chip, comprising multiple pixel units spaced apart;

[0007] Multiple light-transmitting units are disposed on the light-emitting surface side of multiple pixel units. The multiple light-transmitting units are spaced apart from each other and correspond one-to-one with each of the multiple pixel units. A gap region is formed between two adjacent light-transmitting units, and a portion of the light emitted by the pixel unit and propagating through the light-emitting surface passes through the light-transmitting unit.

[0008] Multiple light-absorbing units are disposed on the light-emitting surface side of the multiple pixel units, and each light-absorbing unit is disposed in one of the gap regions. The light-absorbing unit is used to absorb another part of the light emitted by the pixel unit that propagates through the light-emitting surface.

[0009] Optionally, the packaging module further includes:

[0010] A light-transmitting cover plate is disposed and connected to the side of the light-transmitting unit opposite to the micro light-emitting diode chip, and supports the light-transmitting unit and the light-absorbing unit.

[0011] Optionally, the packaging module further includes an adhesive structure, through which at least one of the plurality of light-transmitting units and the plurality of light-absorbing units is connected to the micro LED chip; or,

[0012] The multiple light-transmitting units and the multiple light-absorbing units form a package, and the light-absorbing unit includes an adhesive structure. The package is connected to the micro light-emitting diode chip through the light-absorbing unit.

[0013] Optionally, each of the light-transmitting units includes a top surface and a side surface, the top surface being connected to the light-emitting surface, and the side surface being perpendicular to the top surface.

[0014] Optionally, each of the light-transmitting units includes a top surface and a side surface, the top surface being connected to the light-emitting surface, and the side surface being inclined relative to the top surface.

[0015] Optionally, the absolute value of the difference between the refractive index of the light-emitting surface and the top surface is less than the absolute value of the difference between the refractive index of the light-emitting surface and air.

[0016] Optionally, the packaging structure further includes:

[0017] Multiple sidewall units, each of which surrounds and adheres to the side of one of the light-transmitting units, the sidewall units forming a reflective structure.

[0018] Optionally, the plurality of the light-transmitting units form a microlens array structure.

[0019] Optionally, at least some of the light-transmitting units may comprise quantum dot structures.

[0020] Secondly, this application also provides a display device, including the micro light-emitting diode device package module as described above.

[0021] Based on the above technical solution, in the micro light-emitting diode device packaging module and display device provided in this application, part of the light emitted by the pixel unit of the micro light-emitting diode chip of the packaging module enters the light-transmitting unit through the interface between the light-emitting surface and the light-transmitting unit, and after one or more reflections, passes through the light-transmitting unit and exits outside the packaging module; another part of the light emitted by the pixel unit is absorbed by the light-absorbing unit through the interface between the light-emitting surface and the light-absorbing unit. This part of the light cannot be reflected at the light-emitting surface and enters the interior of the micro light-emitting diode chip. Thus, the light-absorbing unit can avoid the light crosstalk phenomenon caused by the reflection of light emitted by different pixel units at the light-emitting surface, thus ensuring the display effect of the packaging module. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some embodiments of this application. Those skilled in the art can obtain other drawings based on these drawings without any creative effort.

[0023] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0024] Figure 1 This is a schematic diagram of the structure of the miniature light-emitting diode device packaging module provided in the embodiments of this application;

[0025] Figure 2 This is a schematic diagram of the structure of the miniature light-emitting diode chip provided in the embodiments of this application;

[0026] Figure 3 This is a schematic diagram of the optical path of the micro light-emitting diode device packaging module provided in the embodiments of this application;

[0027] Figure 4 This is a schematic diagram of the optical path of a miniature light-emitting diode device packaging module without a light-absorbing unit, according to an embodiment of this application.

[0028] Figure 5 This is a schematic diagram of the structure of the driver chip provided in the embodiments of this application;

[0029] Figure 6 This is a schematic diagram of the structure of the miniature light-emitting diode device provided in the embodiments of this application;

[0030] Figure 7 This is another structural schematic diagram of the micro light-emitting diode device packaging module provided in the embodiments of this application;

[0031] Figure 8 This is another optical path diagram of the micro light-emitting diode device packaging module provided in the embodiments of this application;

[0032] Figure 9 This is another structural schematic diagram of the micro light-emitting diode device packaging module provided in the embodiments of this application;

[0033] Figure 10 This is another optical path schematic diagram of the micro light-emitting diode device packaging module provided in the embodiments of this application;

[0034] Figure 11 This is a schematic diagram of the structure of the display device provided in the embodiments of this application.

[0035] The reference numerals in the attached figures are as follows:

[0036] 10. Packaging module; 20. Miniature light-emitting diode device; 30. Display device; 100. Miniature light-emitting diode chip; 200. Light-transmitting unit; 300. Light-absorbing unit; 400. Gap region; 500. Driver chip; 600. Light-transmitting cover plate; 700. Side wall unit; 101. Pixel unit; 102. Light-emitting surface; 111. First substrate; 112. Buffer layer; 113. First semiconductor layer; 114. Light-emitting layer; 115. Second semiconductor layer; 116. Current diffusion layer; 117. First electrode layer; 118. Second electrode layer; 119. Solder joint structure; 211. Top surface; 212. Side surface; 213. Bottom surface; 511. Second substrate; 512. Driver circuit; 513. Driver pad; 514. Electrical connection part. Detailed Implementation

[0037] The following will refer to the appendices in this application. Figure 1 To be continued Figure 11 The technical solutions in this application are clearly and completely described in conjunction with the embodiments. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0038] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0039] With the continuous development of Micro-LED display technology, it is gradually moving towards smaller size and higher resolution. Micro-LED micro-display modules are often encapsulated using encapsulating adhesives or films. However, the light emitted by the pixel units in a Micro-LED micro-display module needs to pass through a buffer layer before exiting. This causes crosstalk between the light emitted by different pixel units within the buffer layer of the entire structure, resulting in poor display performance of the Micro-LED micro-display module.

[0040] To solve the above-mentioned technical problems, this application provides a micro light-emitting diode device packaging module 10 (hereinafter referred to as packaging module 10) and a display device 30. The light-absorbing unit 300 of the packaging module 10 can absorb part of the light emitted by the pixel unit 101 that propagates outward through the buffer layer 112, thereby reducing the crosstalk between the light emitted by different pixel units 101 in the buffer layer 112 and improving the display effect of the packaging module 10 and the display device 30.

[0041] The following detailed description is based on specific embodiments. It should be noted that the embodiments of this application can be presented in various forms, and some examples will be described below.

[0042] Please refer to Figure 1 , Figure 1 This is a schematic diagram of the structure of the micro light-emitting diode device packaging module 10 provided in the embodiments of this application. The packaging module 10 includes a micro light-emitting diode chip 100, multiple light-transmitting units 200 and multiple light-absorbing units 300.

[0043] The micro LED chip 100 includes a plurality of spaced-apart pixel units 101, each pixel unit 101 emitting light. Along the thickness direction of the micro LED chip 100, a plurality of light-transmitting units 200 are disposed on one side of the light-emitting surface 102 of the plurality of pixel units 101, forming a light-transmitting structure. The plurality of light-transmitting units 200 correspond one-to-one with the plurality of pixel units 101, and the interval period of the plurality of light-transmitting units 200 is equal to the value of the interval period of the plurality of pixel units 101. Part of the light emitted by the pixel unit 101, propagating through the light-emitting surface 102, passes through the plurality of light-transmitting units 200 and propagates to the outside. The plurality of light-transmitting units 200 are spaced apart, forming a gap region 400 between adjacent light-transmitting units 200. Multiple light-absorbing units 300 together form a light-absorbing structure. Each light-absorbing unit 300 is disposed in a gap region 400. Different light-absorbing units 300 are disposed in different gap regions 400. Multiple light-absorbing units 300 are used to absorb part of the light emitted by the pixel unit 101 that has been propagated through the light-emitting surface 102.

[0044] It is understood that the micro LED chip 100 includes a buffer layer 112, and a plurality of spaced pixel units 101 disposed on one side of the buffer layer 112, and a plurality of light-transmitting units 200 disposed on the other side of the buffer layer 112. Please refer to... Figure 2 , Figure 2 This is a schematic diagram of the structure of a micro LED chip 100 provided in an embodiment of this application. The micro LED chip 100 includes a first substrate 111, and a buffer layer 112, a first semiconductor layer 113, a light-emitting layer 114, a second semiconductor layer 115, a current diffusion layer 116, a first electrode layer 117, a second electrode layer 118, and a solder joint structure 119 formed on the first substrate 111. The first semiconductor layer 113, the light-emitting layer 114, the second semiconductor layer 115, the current diffusion layer 116, the first electrode layer 117, and the solder joint structure 119 connected thereto can form a plurality of spaced pixel units 101. After the micro LED chip 100 is bonded to the driving chip 500 (described later), the first substrate 111 can be peeled off, at which point the buffer layer 112 is located on the outermost layer of the micro LED chip 100.

[0045] It is understood that the buffer layer 112 includes a first surface and a second surface disposed opposite to each other along the thickness direction of the micro-LED chip 100. Multiple pixel units 101 are disposed on one side of the first surface and connected to it. Multiple light-transmitting units 200 and multiple light-absorbing units 300 are disposed on one side of the second surface of the buffer layer 112 and connected to it. Light emitted by the pixel units 101 exits the micro-LED chip 100 from the second surface, which serves as the light-emitting surface 102 of the multiple pixel units 101. Therefore, the multiple light-transmitting units 200 and multiple light-absorbing units 300 are disposed on one side of the light-emitting surface 102 of the buffer layer 112.

[0046] It is understood that the light-transmitting structure and light-transmitting unit 200 have high light transmittance, allowing light emitted from pixel unit 101 to pass through the light-transmitting structure and light-transmitting unit 200 and be emitted to the outside. The shape and distribution of the light-transmitting unit 200 are consistent with the shape and distribution of the pixel unit 101. For example, when the pixel openings of pixel unit 101 are arranged in a circular pattern, the light-transmitting unit 200 is a frustum or cylindrical structure. In some examples, the light-transmitting unit 200 may be, but is not limited to, materials such as silicon oxide, silicon nitride, niobium oxide, zirconium oxide, polymethyl methacrylate (PMMA), polyvinyl chloride (PVCD), or mixtures thereof.

[0047] It is understood that the light-absorbing structure and the light-absorbing unit 300 have high extinction properties, and the light-absorbing unit 300 is a high extinction property structure. The distinction between high and low extinction properties primarily depends on the extinction ratio, which refers to the ratio of the light intensity in one polarization direction to the light intensity in another orthogonally polarized direction in an optical system, usually expressed in dB. Generally, the extinction ratio of a low extinction property structure is typically around 10 dB, while the extinction ratio of a high extinction property structure is typically above 25 dB. In the embodiments of this application, the light-absorbing unit 300 may be, but is not limited to, black adhesive.

[0048] Understandably, please refer to Figure 3 , Figure 3This is a schematic diagram of the optical path of the micro LED device packaging module 10 provided in this application embodiment. Light emitted from pixel unit 101 propagates towards the light-emitting surface 102 and passes through buffer layer 112. A portion of the light passes through the interface between buffer layer 112 and light-transmitting unit 200 (e.g., the second surface of buffer layer 112 and the top surface 211 of light-transmitting unit 200) and enters the light-transmitting unit 200. After one or more reflections, it passes through the light-transmitting unit 200 and exits outside the packaging module 10. Another portion of the light passes through the interface between buffer layer 112 and light-absorbing unit 300 (e.g., the second surface of buffer layer 112 and the top surface 211 of light-absorbing unit 300). Because light-absorbing unit 300 has high extinction properties, it absorbs this portion of the light. This portion of the light cannot be reflected at the second surface of buffer layer 112 and enters the buffer layer 112 and the interior of the micro LED chip 100.

[0049] Understandably, for comparison, please refer to Figure 4 , Figure 4 This is a schematic diagram of the optical path of the micro LED device packaging module 10 without the light-absorbing unit 300 according to an embodiment of this application. When the packaging module 10 does not have the light-absorbing unit 300, the gap region 400 between two adjacent light-transmitting units 200 is filled with low-extinction structures such as air. The light emitted by the pixel unit 101 is reflected at the interface between the second surface of the buffer layer 112 and the gap region 400 after passing through the buffer layer 112, and then re-enters the buffer layer 112 and the micro LED chip 100. This reflected light causes crosstalk between the light from different pixel units 101 within the buffer layer 112, reducing the display effect of the packaging module 10. Figure 3 As shown, the light-absorbing unit 300 filled in the gap region 400 of this application can absorb the light passing through the interface between the buffer layer 112 and the light-absorbing unit 300 and avoid its reflection. In this way, the light-absorbing unit 300 of this application can avoid the crosstalk between the light of different pixel units 101 in the buffer layer 112.

[0050] In this embodiment of the micro LED device packaging module 10, part of the light emitted by the pixel unit 101 of the micro LED chip 100 enters the light-transmitting unit 200 through the buffer layer 112 or the interface between the light-emitting surface 102 and the light-transmitting unit 200, and after one or more reflections, passes through the light-transmitting unit 200 and exits outside the packaging module 10. Another part of the light emitted by the pixel unit 101 is absorbed by the light-absorbing unit 300 through the buffer layer 112 or the interface between the light-emitting surface 102 and the light-absorbing unit 300. This part of the light cannot be reflected at the second surface (i.e., the light-emitting surface 102) of the buffer layer 112 and enter the buffer layer 112 and the interior of the micro LED chip 100. The light-absorbing unit 300 can prevent the light emitted by different pixel units 101 from being reflected at the light-emitting surface 102 and causing crosstalk in the buffer layer 112 and the micro LED chip 100, thereby ensuring the display effect of the packaging module 10.

[0051] It should be noted that the accompanying drawings in this application are only for illustrating the packaging module 10 and are not intended to limit the structure of the packaging module 10.

[0052] Please refer to this again. Figure 2 The first substrate 111 of the micro LED chip 100 supports the film structure thereon. The first substrate 111 is a sapphire substrate, a silicon substrate, or a silicon carbide substrate, etc. The buffer layer 112 alleviates the stress caused by lattice mismatch and thermal expansion coefficient mismatch between the film layer and the first substrate 111. The buffer layer 112 can be, but is not limited to, a silicon nitride layer, a silicon oxide layer, a gallium nitride layer, or an aluminum nitride layer. The light-emitting layer 114 is a quantum well layer, for example, an indium gallium nitride quantum well layer or an indium gallium nitride / gallium nitride multi-quantum well layer. The first semiconductor layer 113 is one of an N-type semiconductor layer and a P-type semiconductor layer, and the second semiconductor layer 115 is the other of an N-type semiconductor layer and a P-type semiconductor layer, wherein the N-type semiconductor layer is an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer is a P-type gallium nitride layer or a P-type aluminum gallium nitride layer. The first electrode layer 117 is disposed on the side of the second semiconductor layer 115 opposite to the light-emitting layer 114 and is electrically connected to the second semiconductor layer 115. The second electrode layer 118 is disposed in the exposed area of ​​the first semiconductor layer 113 and is electrically connected to the first semiconductor layer 113. The current diffusion layer 116 can spread and distribute the current very uniformly throughout the entire first semiconductor layer 113, thereby effectively improving the luminous efficiency of the micro LED chip 100. The solder joint structure 119 is connected to the first electrode layer 117 and the second electrode layer 118. The solder joint structure 119 can be made of metals such as indium (In), aluminum (Al), tin (Sn), silver (Ag), gold (Au), gold-tin alloy, and nickel-gold alloy. The solder joint structure 119 is used for bonding with the driver chip 500.

[0053] In some examples, the package module 10 also includes a driver chip 500, which is bonded to the micro LED chip 100. Please refer to [reference needed]. Figure 5 and Figure 6 , Figure 5 This is a schematic diagram of the structure of the driver chip 500 provided in the embodiments of this application. Figure 6 This is a schematic diagram of the structure of the micro-light-emitting diode device 20 provided in this application embodiment. The driving chip 500 includes a second substrate 511, a driving circuit 512 formed on the second substrate 511, and one or more driving pads 513. The driving circuit 512 can be, but is not limited to, a CMOS circuit structure or a TFT circuit structure. The driving pads 513 can be, but are not limited to, made of metals such as In, Al, Sn, Ag, Au, gold-tin alloy, and nickel-gold alloy. The driving chip 500 also includes an electrical connection portion 514 electrically connected to a circuit board. One or more driving pads 513 are configured and bonded one-to-one with one or more solder joint structures 119 of the micro-light-emitting diode chip 100, and the driving chip 500 and the micro-light-emitting diode chip 100 are bonded together to form the micro-light-emitting diode device 20. At this time, the first substrate 111 of the micro-light-emitting diode chip 100 can be peeled off, and the thickness of the micro-light-emitting diode device 20 is thinner.

[0054] Please refer to this again. Figure 1 In this embodiment, multiple light-transmitting units 200 form a microlens array (MLA) structure. Each light-transmitting unit 200 is a microlens structure at the micrometer scale, and multiple micrometer-scale microlenses are arranged in a specific array. This embodiment can be formed using, but is not limited to, thermal reflow, nanoimprinting, inkjet printing, laser direct writing, and self-assembly processes. Because each light-transmitting unit 200 in the microlens array structure is at the micrometer scale, the unit size of the microlens array structure is small, resulting in high integration and improving the compactness of the packaging module 10. Simultaneously, the microlens array structure has collimation and focusing functions, enabling beam shaping and homogenization, improving beam uniformity and quality.

[0055] Please refer to this again. Figure 1 The packaging module 10 in this embodiment of the application also includes a light-transmitting cover plate 600. The light-transmitting cover plate 600 is disposed on the side of the light-transmitting unit 200 and the light-absorbing unit 300 that is away from the micro light-emitting diode chip 100. The light-transmitting cover plate 600 is connected to and supports the light-transmitting unit 200 and the light-absorbing unit 300.

[0056] Understandably, the light-transmitting cover plate 600 serves as the base for the light-transmitting unit 200 and the light-absorbing unit 300. The light-transmitting cover plate 600 has high light transmittance and can be, but is not limited to, transparent glass, anti-reflective glass, transparent polyimide (TPI), etc.

[0057] The encapsulation module 10 of this application embodiment is provided with a light-transmitting cover plate 600 to support the light-transmitting unit 200 and the light-absorbing unit 300. The light-transmitting cover plate 600 can protect the light-transmitting unit 200 and the micro light-emitting diode chip 100, thereby improving the waterproof and impact-resistant performance of the encapsulation module 10. Moreover, the light-transmitting cover plate 600 and the light-transmitting unit 200 and the light-absorbing unit 300 disposed thereon together form a microstructure array encapsulation cover plate. Through the encapsulation integration method, the optical crosstalk phenomenon of different pixel units 101 in the buffer layer 112 can be reduced.

[0058] In some examples, the encapsulation module 10 further includes an adhesive structure. At least one of the plurality of light-transmitting units 200 and the plurality of light-absorbing units 300 is bonded to the buffer layer 112 via the adhesive structure. The light-transmitting unit 200 or the light-absorbing unit 300, or both, are bonded to the second surface of the buffer layer 112 via the adhesive structure. In this case, the light-transmitting unit 200, the light-absorbing unit 300, and the micro-LED chip 100 are bonded together to form a whole, resulting in a tighter connection between the three components and better structural stability of the encapsulation module 10.

[0059] In some examples, multiple light-transmitting units 200 and multiple light-absorbing units 300 form a packaged whole, with the light-absorbing units 300 being an adhesive structure. The packaged whole is connected to the buffer layer 112 through the light-absorbing units 300. It is understood that in some examples, in addition to filling the gap region 400, the light-absorbing units 300 can also fill the gap between the light-absorbing units 300, the light-transmitting units 200, and the buffer layer 112, so as to be bonded to the buffer layer 112 through the light-absorbing units 300. In this embodiment, the light-absorbing units 300 not only prevent crosstalk between light emitted from different pixel units 101 within the buffer layer 112, but also have an adhesive fixing function. The light-absorbing units 300 are reused, simplifying the fabrication process of the packaged module 10.

[0060] It should be noted that, in some other examples, the light-transmitting unit 200 can also be formed on the second side of the buffer layer 112 or the light-transmitting cover plate 600 using conventional microstructure array fabrication techniques such as plasma-enhanced chemical vapor deposition (PECVD), spin coating, photolithography, etching, inkjet printing, and nanoimprinting. In other examples, the light-absorbing unit 300 can also be formed on the second side of the buffer layer 112 or the light-transmitting cover plate 600 using conventional microstructure array fabrication techniques such as spin coating, photolithography, etching, inkjet printing, and nanoimprinting.

[0061] Please refer to the following: Figure 7 and Figure 8 , Figure 7 This is another structural schematic diagram of the miniature light-emitting diode device packaging module 10 provided in the embodiments of this application. Figure 8 This is another optical path diagram of the micro LED device packaging module 10 provided in this application embodiment. The packaging module 10 in this application embodiment also includes a sidewall structure, which includes a plurality of sidewall units 700. Each sidewall unit 700 is disposed within the gap region 400, and the sidewall unit 700 surrounds and adheres to the side surface 212 of a light-transmitting unit 200. The sidewall unit 700 is used to form a reflective structure.

[0062] Understandably, in the production process, the sidewall unit 700 is first filled in the gap area 400 and set around the side 212 of the light-transmitting unit 200, and then the light-absorbing unit 300 is filled in the remaining gap area 400.

[0063] It is understood that the sidewall unit 700 has high reflectivity. The sidewall unit 700 can be, but is not limited to, silver, aluminum, inorganic materials, or mixtures thereof. The sidewall unit 700 can be formed on the side surface 212 of the light-transmitting unit 200 using conventional thin-film deposition and patterning processes such as PECVD, spin coating, evaporation, sputtering, photolithography, and etching. When the sidewall unit 700 is metal, due to its strong light-reflecting effect, the selection range of the light-absorbing unit 300 is wider.

[0064] The packaging module 10 in this embodiment of the application, such as Figure 7 and Figure 8 As shown, the light emitted by the pixel unit 101 enters the light-transmitting unit 200 from the second surface of the buffer layer 112 and is reflected by the sidewall unit 700. Thus, the light can be reflected to the maximum extent in the light-transmitting unit 200 and propagate to the outside without easily entering the light-absorbing unit 300 and being absorbed. The sidewall unit 700 reduces the light absorbed by the light-absorbing unit 300, thus ensuring the display brightness of the encapsulation module 10.

[0065] In some examples, please refer again. Figures 1 to 8In this embodiment, the light-transmitting unit 200 has a vertical structure. Each light-transmitting unit 200 includes a top surface 211, a side surface 212, and a bottom surface 213. The top surface 211 is connected to the second surface of the buffer layer 112, the bottom surface 213 is connected to the light-transmitting cover plate 600, and the side surface 212 is located between the top surface 211 and the bottom surface 213. Furthermore, the side surface 212 is perpendicular to the top surface 211 and the bottom surface 213, and the angle between the side surface 212 and the light-transmitting cover plate 600 is 90 degrees. At this time, the light-absorbing unit 300, which fills the gap region 400 between two adjacent light-transmitting units 200, also has a vertical structure. The overall structure of the package formed by the light-transmitting units 200 and the light-absorbing units 300 is more regular and easier to manufacture.

[0066] In some other examples, please refer to Figure 9 , Figure 9 This is another structural schematic diagram of the micro light-emitting diode device packaging module 10 provided in the embodiments of this application. The side surface 212 of each light-transmitting unit 200 is inclined relative to the top surface 211, and each light-transmitting unit 200 is an inclined structure.

[0067] Understandably, in some examples, each light-transmitting unit 200 is an inclined structure that expands outward along a direction away from the micro LED chip 100. The projection of the bottom surface 213 of each light-transmitting unit 200 onto the buffer layer 112 covers the projection of the top surface 211 onto the buffer layer 112. The light-transmitting unit 200 forms an inclined structure that is narrower near the pixel unit 101 and wider away from the pixel unit 101 (i.e., narrower at the top and wider at the bottom). Please refer to [reference needed]. Figure 10 , Figure 10 This is another optical path diagram of the micro light-emitting diode device packaging module 10 provided in the embodiments of this application. Most of the light emitted by the pixel unit 101 is emitted outward from the second surface of the buffer layer 112 and enters the light-transmitting unit 200. The light is reflected on the side 212 of the light-transmitting unit 200. Since the light-transmitting unit 200 is an inclined structure that expands outward in the direction away from the micro light-emitting diode chip 100, the light-transmitting unit 200 can constrain the wide viewing angle light pattern emitted by the pixel unit 101 and form a positive viewing angle light pattern. The packaging module 10 has high consistency of color and brightness at different angles, good viewing angle consistency, and better display effect.

[0068] It should be noted that in some other examples, each light-transmitting unit 200 can also be an inclined structure that tapers away from the micro LED chip 100. The light-transmitting unit 200 is an inclined structure that is wider at the top and narrower at the bottom. In this case, the light-transmitting unit 200 can gather more light and transmit it to the outside through the light-transmitting unit 200, and the display brightness of the package module 10 is brighter.

[0069] In this embodiment, the light-transmitting unit 200 is designed as an inclined structure. The inclined light-transmitting unit 200 can adjust the viewing angle of the light emitted by the pixel unit 101, or adjust the display brightness of the encapsulation module 10, so that the encapsulation module 10 has a richer display effect.

[0070] Please refer to this again. Figures 1 to 10 In some examples, the absolute value of the difference in refractive index between the buffer layer 112 of the micro LED chip 100 and the top surface 211 of the light-transmitting unit 200 is less than the absolute value of the difference in refractive index between the buffer layer 112 and air. In this case, the light emitted by the pixel unit 101 is more easily refracted into the interior of the light-transmitting unit 200 at the second surface of the buffer layer 112 and the top surface 211 of the light-transmitting unit 200, rather than reflected into the micro LED chip 100. Consequently, more light can enter the light-transmitting unit 200, improving the light extraction efficiency of the packaging module 10.

[0071] Please refer to this again. Figures 1 to 10 In some examples, at least some of the light-transmitting units 200 in this application embodiment are quantum dot structures. Quantum dot structures are a type of nanoconductor material with unique photoelectric properties; when excited by external energy (such as light or electricity), they emit light of a specific frequency. The color of the emitted light can be controlled by adjusting the size of the quantum dots. In some examples, all the light-transmitting units 200 are quantum dot structures that produce light of the same color. In other examples, different light-transmitting units 200 in at least some of the light-transmitting units 200 are different quantum dot structures to produce two, three, or even more colors of light. In this case, this application embodiment utilizes quantum dot structures as light-transmitting units 200. By setting the color of the light generated by the quantum dot structures, the encapsulation module 10 can achieve monochrome or color display, improving the display diversity of the encapsulation module 10.

[0072] Based on the above description, this application also provides a display device 30, please refer to... Figure 11 , Figure 11This is a schematic diagram of the structure of the display device 30 provided in an embodiment of this application. The display device 30 can be applied to electronic devices to realize extended reality (XR) technologies such as augmented reality (AR), virtual reality (VR), and mixed reality (MR). In implementation, the display device 30 can be the projection part of an electronic device, such as a projector or head-up display (HUD). Alternatively, the display device 30 can also be the display part of an electronic device, such as a smartphone, smartwatch, laptop, tablet, dashcam, navigator, head-mounted device, or any device with a display screen. Furthermore, the display device 30 can also be the lighting part of an electronic device, such as a vehicle or streetlight, or any device with lighting components.

[0073] It is understood that the display device 30 of this application embodiment includes the miniature light-emitting diode device package module 10 of any of the above embodiments. Therefore, the display device 30 of this application has less optical crosstalk between pixel units 101, resulting in a better display effect. It should be noted that the miniature light-emitting diode device package module 10 and the display device 30 of this application embodiment are different subjects under the same inventive concept, and features not detailed in each embodiment can be referred to in the descriptions of other embodiments. It should be noted that the term "multiple" mentioned in this application generally refers to two or more. Furthermore, the directional terms mentioned in the embodiments of this application, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are only for reference to the accompanying drawings. Therefore, the directional terms used are for explaining and understanding the embodiments of this application, and not for limiting the embodiments of this application. In the various figures, structurally similar units are represented by the same reference numerals. For clarity, the various parts in the figures are not drawn to scale. In addition, some related parts may not be shown in the figures.

[0074] It should be understood that in the description of this application, terms such as "first" and "second" are used only to distinguish similar objects and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0075] It is understood that those skilled in the art can combine various implementation methods in the above embodiments under the guidance of the above examples to obtain technical solutions with multiple implementation methods. The above descriptions are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

[0076] The foregoing has provided a detailed description of the miniature light-emitting diode (LED) device packaging module and display device provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of aiding understanding this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there may be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A miniature light-emitting diode (LED) device packaging module, characterized in that, include: A miniature light-emitting diode chip, comprising multiple pixel units spaced apart; Multiple light-transmitting units are disposed on the light-emitting surface side of multiple pixel units. The multiple light-transmitting units are spaced apart from each other and are disposed in one-to-one correspondence with multiple pixel units. A gap region is formed between two adjacent light-transmitting units. Part of the light emitted by the pixel unit and propagated through the light-emitting surface passes through the light-transmitting unit. and Multiple light-absorbing units are disposed on the light-emitting surface side of the multiple pixel units, and each light-absorbing unit is disposed in one of the gap regions. The light-absorbing unit is used to absorb another part of the light emitted by the pixel unit that propagates through the light-emitting surface.

2. The micro light-emitting diode device packaging module according to claim 1, characterized in that, The packaging module also includes: A light-transmitting cover plate is disposed and connected to the side of the light-transmitting unit opposite to the micro light-emitting diode chip, and supports the light-transmitting unit and the light-absorbing unit.

3. The micro light-emitting diode device packaging module according to claim 1, characterized in that, The packaging module further includes an adhesive structure, through which at least one of the plurality of light-transmitting units and the plurality of light-absorbing units is connected to the micro LED chip; or... The multiple light-transmitting units and the multiple light-absorbing units form a package, and the light-absorbing unit includes an adhesive structure. The package is connected to the micro light-emitting diode chip through the light-absorbing unit.

4. The micro light-emitting diode device packaging module according to claim 1, characterized in that, Each of the light-transmitting units includes a top surface and a side surface, the top surface being connected to the light-emitting surface, and the side surface being perpendicular to the top surface.

5. The micro light-emitting diode device packaging module according to claim 1, characterized in that, Each of the light-transmitting units includes a top surface and a side surface, the top surface being connected to the light-emitting surface, and the side surface being inclined relative to the top surface.

6. The micro light-emitting diode device packaging module according to claim 4 or 5, characterized in that, The absolute value of the difference between the refractive index of the light-emitting surface and the top surface is less than the absolute value of the difference between the refractive index of the light-emitting surface and air.

7. The micro light-emitting diode device packaging module according to any one of claims 1 to 5, characterized in that, The packaging structure further includes: Multiple sidewall units, each of which surrounds and adheres to the side of one of the light-transmitting units, the sidewall units forming a reflective structure.

8. The micro light-emitting diode device packaging module according to any one of claims 1 to 5, characterized in that, Multiple light-transmitting units form a microlens array structure.

9. The micro light-emitting diode device packaging module according to any one of claims 1 to 5, characterized in that, At least some of the light-transmitting units comprise quantum dot structures.

10. A display device, characterized in that, Includes the micro light-emitting diode device packaging module as described in any one of claims 1 to 9.

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