Semiconductor power module and motor control device

Abstract

The utility model provides a semiconductor power module and a motor control device, the semiconductor power module comprises a housing, at least two substrate units and a radiator arranged in a space mode, the radiator is provided with heat radiation areas used for installing the substrate units, and each substrate unit corresponds to one heat radiation area; a cooling flow channel for cooling liquid to flow through each radiating area is arranged in the radiator; the shell is arranged on the radiator, so that a closed space is formed between the radiator and the shell and used for sealing the substrate units. According to the utility model, the occupied area can be greatly reduced so as to reduce the overall volume of equipment, and meanwhile, the space utilization rate and power density in the height direction inside the equipment are improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor packaging technology, and in particular to a semiconductor power module and a motor control device. Background Technology

[0002] A power module is a modular electronic component that integrates multiple power semiconductor devices and drive circuits. It is widely used in power control and conversion tasks that require handling high voltage and high current. Compared to discrete devices, power modules offer higher reliability, higher power density, and lower losses, playing a crucial role in power electronic systems.

[0003] Compared to Si devices, third-generation semiconductor devices, represented by SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), are more suitable for power electronic converters in high-frequency, high-voltage, and high-temperature applications, further increasing converter efficiency and power density. However, the widespread application of SiC MOSFETs also brings new challenges. Due to their high power density and high-frequency operating characteristics, the heat flux density inside the device increases significantly, leading to a significant increase in thermal resistance and posing great difficulties for thermal management. If thermal management is inadequate, excessively high temperatures can not only reduce device performance and lifespan but may also trigger serious problems such as thermal runaway, severely affecting the safety and stability of the power electronic converter.

[0004] Power modules, as a modular design integrating power semiconductor devices and related circuits, are widely used in photovoltaics, energy storage, and electric vehicles due to their compact size, excellent thermal management design, and high reliability. In these applications, power modules need to operate stably for extended periods in harsh environments, placing particularly stringent demands on thermal management. High Power Device (HPD) packaging, a relatively mature high-power module packaging technology, effectively reduces thermal resistance and improves heat dissipation efficiency, providing strong support for the stable operation of power modules. However, HPD itself also has some limitations. Due to its structural design and heat dissipation requirements, the HPD package typically has a large footprint, directly leading to an increase in the overall size of the device (such as motor control equipment). This increased size not only restricts the space available for installation and use but also further increases the overall weight of the device, thus affecting portability and installation flexibility. Utility Model Content

[0005] In view of the shortcomings of the prior art described above, the technical problem to be solved by this utility model is to provide a semiconductor power module and device that can significantly reduce the footprint, thereby reducing the overall size of the device and increasing the power density.

[0006] This utility model provides a semiconductor power module, including a housing, at least two substrate units, and a heat sink with a bent structure. The heat sink has a heat dissipation area for mounting the substrate units, and each substrate unit corresponds to one heat dissipation area. The heat sink has cooling channels for coolant to flow through each heat dissipation area. The heat sink and the housing cooperate to form a closed space for sealing each substrate unit.

[0007] Preferably, the radiator includes at least two heat dissipation units, which are connected sequentially at a predetermined angle to form a three-dimensional spatial structure.

[0008] Preferably, each of the heat dissipation units is provided with a heat dissipation plate for mounting the substrate unit to form the heat dissipation area.

[0009] Preferably, the heat dissipation units are connected to form an L-shaped spatial structure.

[0010] Preferably, the heat dissipation units are connected in sequence to form a U-shaped or U-shaped spatial structure.

[0011] Preferably, the heat dissipation units are connected in sequence to form a Z-shaped spatial structure.

[0012] Preferably, the system further includes a terminal assembly, which includes a signal pin and a power terminal. The signal pin is vertically connected to one end of the substrate unit, and the power terminal is vertically connected to the other end of the substrate unit.

[0013] Preferably, the power terminals or signal pins on adjacent substrate units are distributed at different ends.

[0014] Preferably, the side wall of the housing is provided with a through hole.

[0015] Another aspect of this invention provides a motor control device, including the semiconductor power module described above.

[0016] As described above, the semiconductor power module and motor control device disclosed in this utility model have the following beneficial effects:

[0017] This invention utilizes a three-dimensional heat sink design, with a base plate unit placed in each heat dissipation area to fully leverage vertical space. Heat generated by the base plate unit is conducted to the heat dissipation area, where coolant flows through cooling channels, carrying away the heat. The base plate units are distributed across multiple surfaces to prevent heat concentration, and the cooling channels further enhance heat dissipation uniformity. This invention significantly reduces the footprint, thereby minimizing the overall size of the equipment, while simultaneously improving the vertical space utilization and power density within the equipment. Attached Figure Description

[0018] Figure 1 This is a three-dimensional schematic diagram of a semiconductor power module provided in Embodiment 1 of the present invention.

[0019] Figure 2 This is a side view of a semiconductor power module provided in Embodiment 1 of the present invention.

[0020] Figure 3 This is a front view of a semiconductor power module provided in Embodiment 1 of this utility model.

[0021] Figure 4 This is a top view of the semiconductor power module provided in Embodiment 1 of this utility model.

[0022] Figure 5 This is a schematic diagram of a semiconductor power module provided in Embodiment 1 of this utility model.

[0023] Figure 6 This is a schematic diagram of a semiconductor power module provided in Embodiment 2 of this utility model.

[0024] Figure 7 This is a schematic diagram of a semiconductor power module provided in Embodiment 3 of this utility model.

[0025] Figure 8 This is a schematic diagram illustrating the effect of the semiconductor power module provided in Embodiment 1 of this utility model.

[0026] Figure 9 This is a three-dimensional schematic diagram of a semiconductor power module provided in Embodiment 4 of this utility model.

[0027] Explanation of reference numerals in the attached figures:

[0028] 100, Housing; 110, Through hole; 200, Substrate unit; 300, Heat sink; 310, Heat dissipation unit; 311, Heat sink plate; 400, Heat dissipation area; 500, Cooling channel; 600, Terminal assembly; 610, Signal pin; 620, Power terminal. Detailed Implementation

[0029] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification.

[0030] It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings of this specification are merely for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of this utility model, should still fall within the scope of the technical content disclosed in this utility model. Furthermore, the terms such as "upper," "lower," "left," "right," and "middle" used in this specification are merely for clarity of description and are not intended to limit the scope of implementation of this utility model. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of implementation of this utility model.

[0031] Example 1

[0032] like Figures 1 to 4As shown, this embodiment provides a semiconductor power module, including a housing 100, semiconductor elements, terminal assemblies 600, substrate units 200, and a heat sink 300 with a bent structure. Preferably, there are three substrate units 200. The heat sink 300 has a heat dissipation area 400 for mounting the substrate units 200, and each substrate unit 200 corresponds to one heat dissipation area. The substrate unit 200 is preferably a direct-bonding copper (DBC) ceramic substrate to fully utilize its excellent heat dissipation performance. Each substrate unit 200 is provided with semiconductor elements and terminal assemblies 600. To reduce the overall footprint of the power module, the terminal assemblies 600 are distributed vertically, making full use of the space in the height direction to optimize the vertical spatial layout within the device, thereby reducing the footprint of the power module and effectively reducing the overall size of the device, thus increasing the power density of the power module. This device includes, but is not limited to, motor control devices in the field of electric vehicles, and can also be control devices in the fields of photovoltaics and energy storage. The radiator 300 is equipped with cooling channels 500 for coolant to flow through each heat dissipation zone 400. The inlet and outlet of the cooling channels 500 are connected to a coolant circulation device to form a closed-loop water cooling system, allowing each heat dissipation zone 400 to fully exchange heat with the coolant, thereby removing most of the heat generated by the semiconductor components. The cooling channels 500 can be arranged in a serpentine pattern or in parallel to ensure that the coolant covers each heat dissipation zone. The radiator 300 includes three heat dissipation units 310, which are connected sequentially at 90° or other predetermined angles to form a three-dimensional bent structure. This connection method includes, but is not limited to, integral molding or a separate sealed connection. In this embodiment, the heat dissipation units 310 are preferably connected at a 90° angle, forming a three-sided vertical layout, making the radiator 300 as a whole U-shaped or C-shaped structure, thus significantly reducing the overall footprint of the radiator 300. The U-shaped arrangement effectively avoids structural cracking caused by stress concentration. For ease of subsequent maintenance, in this embodiment, the housing 100 is preferably detachably mounted on the heat sink 300, so that a sealed space is formed between the heat sink 300 and the housing 100, which is used to seal each substrate unit 200 mounted on the heat sink 300, so as to prevent the substrate unit 200 and the components on the substrate unit 200 from being mechanically damaged, and at the same time make the structure of the power module more compact.

[0033] In use, the heat generated by each semiconductor component is transferred to the cylindrical layer of the substrate unit 200 through the silver sintered layer or solder. The heat is then conducted through the ceramic and copper layers of the substrate unit 200 to the metal surface of the heat dissipation area 400 on the heat sink 300, corresponding to the substrate unit 200. The cooling liquid in the cooling channel 500 inside the heat sink 300 circulates, exchanging heat with the metal surface of the heat dissipation area 400, ultimately carrying most of the heat away from the power module, thus effectively cooling the entire power module. Figure 8 As shown, when the power module is used under specific operating conditions, the maximum temperature generated by the power module is <175℃, which complies with industry standards.

[0034] Furthermore, such as Figure 4 As shown, each heat dissipation unit 310 is provided with a heat dissipation plate 311 for mounting the substrate unit 200. The substrate unit 200 is attached to the heat dissipation plate 311. The cooling channel 500 flows through each heat dissipation unit 310, so that the substrate unit 200 can fully exchange heat at each heat dissipation plate 311, thereby forming a heat dissipation area 400 at each heat dissipation plate 311.

[0035] Furthermore, such as Figures 1 to 4 The terminal assembly 600 includes a signal pin 610 and a power terminal 620. The signal pin 610 is vertically disposed at one end of the substrate unit 200, and the power terminal 620 is vertically disposed at the other end of the substrate unit 200, so that the signal pin 610 and the power terminal 620 are arranged opposite each other to fully optimize the spatial layout in the height direction, thereby achieving a significant reduction in the overall area of ​​the power module by appropriately increasing the height. The power terminals 620 or signal pins 610 on adjacent substrate units 200 are distributed at the same end for centralized connection and management. Both the signal pin 610 and the power terminal 620 are sealed and snapped onto the housing 100, serving as part of the heat dissipation path to conduct heat generated by the internal semiconductor chip to the external environment. The signal pin 610 is mainly used to transmit low-current, low-voltage control or data signals, while the power terminal 620 is responsible for carrying high current and high voltage, directly connecting the power supply and the load.

[0036] Furthermore, such as Figure 1 As shown, a through hole 110 is provided on the side wall of the housing 100. The through hole 110 allows air to flow in the sealed space, which can remove some of the heat generated by the semiconductor elements on the substrate unit 200. At the same time, the through hole enables air to flow inside and outside the sealed space, which helps to balance the pressure inside and outside the sealed space and prevent the housing from deforming.

[0037] Example 2

[0038] This embodiment is largely the same as Embodiment 1, with the main difference being that, Figure 6As shown, in this embodiment, the heat dissipation unit 310 is preferably two, and the included angle between the heat dissipation units 310 is not limited to 90°. The heat dissipation units 310 are connected to each other to form an L-shaped spatial structure heat sink 300. The included angle between the heat dissipation units 310 can also be selected according to specific operating conditions. The heat dissipation unit 310 is not limited to integral molding, but can also be selected as a split-type sealed connection. The heat sink 300 structure formed by connecting the heat dissipation units 310 has an open area, which is sealed by covering the open area with the housing 100 to prevent mechanical damage to the substrate unit 200 and the components mounted on the substrate unit 200 within the open area. The structure of the housing 100 needs to be determined according to the open area pattern to ensure compatibility.

[0039] Example 3

[0040] This embodiment is largely the same as Embodiment 1, with the main difference being that, Figure 7 As shown, in this embodiment, three heat dissipation units 310 are preferably connected sequentially to form a Z-shaped three-dimensional spatial structure, and the heat dissipation units 310 are connected at a certain angle, which can be determined according to specific working conditions. Based on the Z-shaped spatial structure formed by the heat dissipation units 310, the heat sink has two open areas, requiring the two housings 100 to be covered and sealed to prevent mechanical damage to the substrate unit 200 and components mounted on the substrate unit 200 within the open areas. The structure of the housing 100 needs to be determined according to the open area pattern to ensure compatibility.

[0041] Example 4

[0042] This embodiment is largely the same as Embodiment 1, with the main difference being that, Figure 9 As shown, the power terminals 620 or signal pins 610 on adjacent substrate units 200 are distributed at different ends. Since the power terminals 620 generate heat when transmitting large currents, distributing them at different ends on adjacent substrate units 200 allows for more even heat dissipation, avoiding heat concentration caused by the power terminals 620 being concentrated in one area. Simultaneously, distributing the signal pins 610 and power terminals 620 at different ends effectively reduces signal interference. Furthermore, distributing the power terminals 620 at different ends on adjacent substrate units allows for better space utilization and avoids mutual interference between the power terminals.

[0043] Furthermore, in a second aspect, this disclosure also provides an apparatus having the semiconductor power module provided in this disclosure. This apparatus includes, but is not limited to, a motor control device for new energy vehicles.

[0044] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A semiconductor power module, characterized in that, The device includes a housing (100), at least two substrate units (200), and a radiator (300) with a bent structure. The radiator (300) has a heat dissipation area (400) for mounting the substrate units (200), and each substrate unit (200) corresponds to one heat dissipation area (400). The radiator (300) has cooling channels (500) for coolant to flow through each heat dissipation area (400). The radiator (300) and the housing (100) cooperate to form a closed space for sealing each substrate unit (200). The radiator (300) includes at least two heat dissipation units (310), which are connected sequentially at a predetermined angle to form a three-dimensional bent structure. Each heat dissipation unit (310) has a heat dissipation plate (311) for mounting the substrate unit to form the heat dissipation area (400).

2. The semiconductor power module according to claim 1, characterized in that, The heat dissipation units (310) are connected to form an L-shaped spatial structure.

3. The semiconductor power module according to claim 1, characterized in that, Each of the heat dissipation units (310) is connected in sequence to form a U-shaped or U-shaped spatial structure.

4. The semiconductor power module according to claim 1, characterized in that, Each of the heat dissipation units (310) is connected in sequence to form a Z-shaped spatial structure.

5. The semiconductor power module according to claim 1 or 2, characterized in that, It also includes a terminal assembly (600) for connecting a substrate unit, the terminal assembly (600) including a signal pin (610) and a power terminal (620), the signal pin (610) being connected to one end of the substrate unit (200) in a vertical direction, and the power terminal (620) being connected to the other end of the substrate unit (200) in a vertical direction.

6. The semiconductor power module according to claim 5, characterized in that, The power terminals (620) or signal pins (610) on adjacent substrate units (200) are distributed at different ends.

7. The semiconductor power module according to claim 1 or 2, characterized in that, The side wall of the housing (100) is provided with a through hole (110).

8. A motor control device, characterized in that, Includes the semiconductor power module as described in any one of claims 1 to 7.

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