Low-ash semiconductor thermal field isostatic pressing graphite material forming device

Abstract

The utility model relates to the technical field of semiconductor material manufacturing, in particular to a low-ash semiconductor thermal field isostatic pressing graphite material forming device which comprises a base, a bottom die is fixed to the top of the base through a bearing plate, guide columns are arranged on the two sides of the bottom die, and a lifting plate driven by a hydraulic mechanism is arranged at the upper ends of the guide columns. A pressing die base is installed at the bottom of the lifting plate at the upper end of the guide column, a rotating circular plate driven by a rotator is arranged in the lower end of the pressing die base, a main pressing block is arranged in the center of the bottom of the rotating circular plate, and a plurality of guide blocks are further arranged at the bottom of the rotating circular plate in a surrounding and driving mode through guide rail grooves; a dynamic pressure assembly composed of an adjuster and an auxiliary pressing block is arranged at the bottom of the guide block. According to the low-ash semiconductor thermal field isostatic pressing graphite material forming device, the yield and the product performance are improved, and the quality consistency and reliability of graphite products with complex shapes or large sizes are ensured.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material manufacturing technology, specifically to a low-ash semiconductor thermal field isostatic pressing graphite material forming device. Background Technology

[0002] In the manufacturing process of semiconductor materials, isostatically pressed graphite is widely used in the fabrication of thermal field components for various semiconductor devices due to its excellent electrical and thermal conductivity and high-temperature resistance. To meet the demands of high-performance semiconductor equipment, these graphite materials are required to have low ash content to reduce the impact of impurities on semiconductor performance. Traditional isostatic pressing methods for graphite materials include cold isostatic pressing and hot isostatic pressing, which apply uniform pressure to shape graphite powder into the desired shape and density within a mold.

[0003] Existing isostatic pressing graphite material forming equipment has a significant problem when processing low-ash graphite: because it usually adopts a single pressure application method, uneven pressure distribution is likely to occur during the forming process of graphite products with complex shapes or large sizes, which affects the quality of the final product. At the same time, cracks or inconsistent density may occur in the material during the pressing process. These problems directly affect the yield and product performance. Utility Model Content

[0004] The purpose of this invention is to provide a low-ash semiconductor thermal field isostatic pressing (STP) graphite material forming apparatus to solve the problems mentioned in the background art, such as uneven pressure distribution, easy generation of internal cracks, and inconsistent density in the product caused by the use of a single pressure application method in the current process of manufacturing low-ash semiconductor thermal field isostatic pressing graphite materials.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a low-ash semiconductor thermal field isostatic pressing graphite material forming device, comprising a base, a bottom mold fixed to the top of the base by a bearing plate, guide pillars on both sides of the bottom mold, a lifting plate driven by a hydraulic mechanism at the upper end of the guide pillars, a pressing mold seat installed at the bottom of the lifting plate at the upper end of the guide pillars, a rotating circular plate driven by a rotator inside the lower end of the pressing mold seat, a main pressing block at the center of the bottom of the rotating circular plate, and several guide blocks driven around the bottom of the rotating circular plate by guide rail grooves, and a dynamic pressure component consisting of an adjuster and an auxiliary pressing block at the bottom of the guide blocks.

[0006] Preferably, the guide rail groove of the rotating circular plate is provided with horizontally distributed guide shafts, and the guide block is movably sleeved on the outside of the guide shaft.

[0007] Preferably, all the auxiliary pressing blocks are arc-shaped structures of the same size, and pressure sensors are installed on the outer wall of the auxiliary pressing blocks.

[0008] Preferably, a sealing ring is provided on the outer wall of the edge of the rotating circular plate, and a sealing groove that mates with the sealing ring is provided inside the lower end of the mold base.

[0009] Preferably, the dynamic pressure components are provided in six sets at the bottom of the rotating circular plate, and the dynamic pressure components are evenly arranged around the main pressing block.

[0010] Preferably, a connecting seat is welded and fixed to the bottom of the lifting plate at the upper end of the guide post, and the top of the pressing mold seat is provided with a fitting plate that matches the internal structure of the connecting seat.

[0011] Compared with existing technologies, the beneficial effects of this invention are: the low-ash semiconductor thermal field isostatic pressing graphite material forming device improves the yield and product performance, ensuring the quality consistency and reliability of graphite products with complex shapes or large sizes. The device uses a hydraulic mechanism at the upper end of the guide column to drive the lifting plate to precisely adjust the position of the mold base. Combined with a rotator controlling the rotating disc and the main pressing block at its bottom, it applies the main pressure to the graphite material. Furthermore, a dynamic pressure assembly consisting of multiple guide blocks and their corresponding adjusters and auxiliary pressing blocks achieves uniform pressure application at multiple points, effectively solving the problem of uneven pressure distribution caused by traditional single pressure sources. This enhances the flexibility and adaptability of the manufacturing process and significantly reduces the occurrence of cracks or inconsistent density in the products. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the structure of a low-ash semiconductor thermal field isostatic pressing graphite material forming device according to the present invention;

[0013] Figure 2 This is a side view of the mold base of a low-ash semiconductor thermal field isostatic pressing graphite material forming device according to the present invention.

[0014] Figure 3 This is a schematic diagram of the bottom structure of the mold base of a low-ash semiconductor thermal field isostatic pressing graphite material forming device according to the present invention.

[0015] In the diagram: 1. Base; 2. Bottom mold; 3. Guide pillar; 4. Press mold base; 5. Rotator; 6. Rotating circular plate; 7. Connecting seat; 8. Main pressing block; 9. Guide block; 10. Adjuster; 11. Auxiliary pressing block; 12. Fitting plate; 13. Guide shaft; 14. Pressure sensor; 15. Sealing ring. Detailed Implementation

[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0017] Please see Figure 1-3This utility model provides a technical solution: a low-ash semiconductor thermal field isostatic pressing graphite material molding device, including a base 1, which provides stable support to ensure the stability of the entire structure. A bottom mold 2 is fixed to the top of the base 1 via a support plate. The center of the bottom of the support plate is connected to the top of the base 1 via a bearing, and the edge of its bottom is connected to the top of the base 1 via an annular guide rail. Guide posts 3 are provided on both sides of the bottom mold 2. The bottom end of the guide post 3 is welded and fixed to the connection between the top of the base 1 and the bottom end of the guide post 3. A lifting plate driven by a hydraulic mechanism is provided at the upper end of the guide post 3. A pressure mold seat 4 is installed at the bottom of the lifting plate at the upper end of the guide post 3. A rotating circular plate 6 driven by a rotator 5 is provided inside the lower end of the pressure mold seat 4. The rotator 5 is the existing "RT-800" model rotator. The rotary drive, rotator 5, and rotating disc 6 are installed in a slot at the lower end of the mold base 4. A main pressing block 8 is screwed to the center of the bottom of the rotating disc 6. Several guide blocks 9 are driven around the bottom of the rotating disc 6 by guide rail grooves. Both sides of the guide blocks 9 are connected to the inner walls of the guide rail grooves at the bottom of the rotating disc 6 by linear guide rails. The bottom of the guide blocks 9 is equipped with a dynamic pressure assembly consisting of an adjuster 10 and an auxiliary pressing block 11. The adjuster 10 is an "EHR-2000" model precision electro-hydraulic adjuster, and its top is fixed to the bottom of the guide block 9 by bolts. The output end of the adjuster 10 is welded to the connection of the auxiliary pressing block 11. The hydraulic mechanism at the upper end of the guide column 3 can drive the lifting plate to move smoothly up and down along the guide column 3. The movement of the pressure mold base 4 precisely adjusts its position, allowing the rotator 5 to accurately control the rotation of the rotating disc 6. During rotation, the main pressure block 8 applies primary pressure to the graphite material. Simultaneously, multiple guide blocks 9 run along the guide rail grooves at the bottom of the rotating disc 6. Each guide block 9 is equipped with a dynamic pressure assembly consisting of an adjuster 10 and auxiliary pressure blocks 11, evenly distributed around the main pressure block 8. This allows for flexible adjustment of the pressure at each point as needed, achieving multi-point, uniform pressure on the graphite material. This effectively solves the problem of uneven pressure distribution caused by a single pressure source in traditional isostatic graphite molding, preventing cracks or density differences in the products and significantly improving the yield and performance quality of complex-shaped or large-sized graphite products. This ensures high consistency and reliability of the final product, thereby optimizing the manufacturing process and improving production efficiency, meeting the high standards required for high-performance semiconductor thermal field materials. The rotating circular plate 6 has horizontally distributed guide shafts 13 within its guide rail grooves, and guide blocks 9 are movably sleeved on the outside of the guide shafts 13. This structure allows the guide blocks 9 to slide smoothly along the guide shafts 13, ensuring the accuracy and stability of the guide blocks 9 during radial movement. This not only guarantees a tight fit between the guide blocks 9 and the rotating circular plate 6, but also reduces the swaying of the guide blocks 9 under high-speed movement or high-pressure conditions through the support provided by the guide shafts 13. The auxiliary pressing blocks 11 are all arc-shaped structures of the same size, and pressure sensors 14 are bonded and fixed to the outer wall of the auxiliary pressing blocks 11.The pressure sensor 14 is a small "PS-205" model pressure sensor. The pressure sensor 14 is connected to the corresponding regulator 10 via a wire. With this structure, when the auxiliary pressing block 11 applies pressure to the material, the pressure sensor 14 can monitor and provide feedback on the pressure value applied by each auxiliary pressing block 11 in real time. The regulator 10 dynamically adjusts the position and pressure of each auxiliary pressing block 11 based on this feedback data, ensuring uniform and precise pressure distribution throughout the pressing process. This not only improves the control accuracy during the molding process of complex shapes or large-sized graphite products but also effectively avoids product defects caused by excessive or insufficient local pressure. A sealing ring 15 is bonded and fixed to the outer wall of the rotating circular plate 6, and a sealing groove that mates with the sealing ring 15 is provided inside the lower end of the mold base 4. With this structure, when the rotating circular plate 6 rotates under the drive of the rotator 5, the sealing ring 15 can tightly fit into the sealing groove inside the lower end of the mold base 4, forming an effective sealing environment and preventing material from entering the lower end of the mold base 4. Six sets of pressure components are located at the bottom of the rotating circular plate 6, and the dynamic pressure components are evenly distributed around the main pressing block 8. This structure allows the six sets of dynamic pressure components to work in conjunction with the main pressing block 8, achieving comprehensive, multi-point pressure coverage during the molding process. This effectively avoids the problem of uneven pressure caused by a single pressure source. A connecting seat 7 is welded and fixed to the bottom of the lifting plate at the upper end of the guide post 3, and the top of the mold base 4 has a fitting plate 12 that matches the internal structure of the connecting seat 7. Both the fitting plate 12 and the connecting seat 7 have matching bolt connection holes on both sides. When the hydraulic mechanism drives the lifting plate to move up and down along the guide post 3, the connecting seat 7 can stably drive the mold base 4 to make precise position adjustments. Furthermore, the tight fit between the fitting plate 12 and the connecting seat 7, and the bolts passing through the connection holes on both sides for fastening, ensure the stability and reliability of the mold base 4 under high-pressure working conditions. This not only enhances the rigidity and load-bearing capacity of the entire device but also simplifies the installation and disassembly process, facilitating maintenance and component replacement.

[0018] Working Principle: When using this low-ash semiconductor thermal field isostatic pressing graphite material forming device, the graphite material to be formed is first placed on the bottom mold 2. Then, the hydraulic mechanism at the top of the guide column 3 is activated, driving the lifting plate on the guide column 3 to move smoothly up and down along the guide column 3, causing the mold base 4 to descend precisely to the set position. At the same time, the rotator 5 starts working, precisely controlling the rotating circular plate 6 and the main pressing block 8 at its bottom to rotate, applying the main pressure to the graphite material. During this process, the guide block 9 slides smoothly along the outside of the guide shaft 13 under the drive of the linear guide rail. Thus, the adjustment device 10 and the auxiliary pressing block 11 work together to form a complete system. The dynamic pressure component can flexibly adjust the pressure at each point according to actual needs, so as to achieve multi-point and uniform pressure on the graphite material. Throughout the process, the pressure sensor 14 monitors and feeds back the pressure value applied by the auxiliary pressing block 11 in real time. The regulator 10 dynamically adjusts the position and pressure of each auxiliary pressing block 11 based on these data to ensure that the pressure distribution is uniform and accurate. At the same time, the sealing ring 15 fits tightly against the sealing groove inside the lower end of the mold base 4 to form an effective sealing environment. Finally, when the molding process is completed, the hydraulic mechanism is restarted to drive the lifting plate to rise and drive the mold base 4 away from the bottom mold 2, thereby completing a series of tasks.

[0019] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A low-ash semiconductor thermal field isostatic pressing graphite material forming apparatus, comprising a base (1), wherein a bottom mold (2) is fixed to the top of the base (1) by a bearing plate, and guide posts (3) are provided on both sides of the bottom mold (2), characterized in that: The upper end of the guide post (3) is provided with a lifting plate driven by a hydraulic mechanism. The bottom of the lifting plate at the upper end of the guide post (3) is equipped with a pressure mold seat (4). The lower end of the pressure mold seat (4) is provided with a rotating circular plate (6) driven by a rotator (5). The center of the bottom of the rotating circular plate (6) is provided with a main pressing block (8). The bottom of the rotating circular plate (6) is also driven by several guide blocks (9) around it through a guide rail groove. The bottom of the guide block (9) is provided with a dynamic pressure assembly consisting of an adjuster (10) and an auxiliary pressing block (11).

2. The low-ash semiconductor thermal field isostatic pressing graphite material forming apparatus according to claim 1, characterized in that: The guide rail groove of the rotating circular plate (6) is provided with horizontally distributed guide shafts (13), and the guide block (9) is movably sleeved on the outside of the guide shaft (13).

3. The low-ash semiconductor thermal field isostatic pressing graphite material forming apparatus according to claim 1, characterized in that: All the auxiliary pressing blocks (11) are arc-shaped structures of the same size, and pressure sensors (14) are installed on the outer wall of the auxiliary pressing blocks (11).

4. The low-ash semiconductor thermal field isostatic pressing graphite material forming apparatus according to claim 1, characterized in that: The rotating circular plate (6) has a sealing ring (15) on its outer edge, and the lower end of the mold base (4) has a sealing groove that matches the sealing ring (15).

5. The low-ash semiconductor thermal field isostatic pressing graphite material forming apparatus according to claim 1, characterized in that: The dynamic pressure components are provided in six sets at the bottom of the rotating circular plate (6), and the dynamic pressure components are evenly arranged around the main pressing block (8).

6. The low-ash semiconductor thermal field isostatic pressing graphite material forming apparatus according to claim 1, characterized in that: The bottom of the lifting plate at the upper end of the guide post (3) is welded and fixed with a connecting seat (7), and the top of the mold base (4) is provided with a fitting plate (12) that matches the internal structure of the connecting seat (7).

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