Ion beam sputtering coating machine for large-size wafer

Abstract

The utility model discloses an ion beam sputter coating machine for a large-size wafer. The ion beam sputter coating machine comprises a base, a rotating table, a wafer clamping device, an ion source assembly, an adjusting mechanism and a vacuum cavity, omnibearing film coating of the wafer is achieved through cooperation of the rotating table and the clamping device, and frequent clamping is not needed. The deflection correction mechanism compensates for uneven distribution of the ion beams, and the focusing lens can adjust the diaphragm to optimize the shape of the ion beams; the reflecting layer and the cooling fins in the vacuum cavity reduce the temperature influence, and the damping structure improves the operation stability. The large-size wafer film coating efficiency and the film layer uniformity can be remarkably improved, surface damage and operation complexity are reduced, and high practicability and popularization value are achieved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing and thin film deposition technology, and in particular to an ion beam sputtering coating machine for large-size wafers. Background Technology

[0002] Ion beam sputtering coating technology offers advantages such as good film uniformity and strong adhesion, and is commonly used for surface treatment of high-precision optical components and semiconductor devices. However, in the coating process of large-size wafers, due to the large wafer area and high requirements for film quality, traditional coating equipment often struggles to meet the process demands. Existing equipment requires multiple clamping and repositioning of the wafer to achieve full coverage during coating; however, frequent operations can easily lead to contamination or damage to the wafer surface, affecting the final product quality.

[0003] Furthermore, the weight of large-size wafers means that inaccurate positioning during transport and fixation can lead to uneven coating thickness or localized defects, further reducing yield. Simultaneously, as wafer size increases, controlling the uniformity of the ion beam distribution within the equipment becomes more difficult, increasing the complexity and time cost of process debugging. These issues pose significant challenges to efficiency and yield in actual production. Utility Model Content

[0004] The purpose of this utility model is to provide an ion beam sputtering coating machine for large-size wafers, which solves the problems mentioned in the background art.

[0005] This invention is implemented as follows: an ion beam sputtering coating machine for large-size wafers includes a base, a rotating stage, wafer clamping devices, an ion source assembly, an adjustment mechanism, and a vacuum chamber. The rotating stage is mounted on the base, and at least two wafer clamping devices are installed on the rotating stage. Each wafer clamping device includes a clamping arm and a positioning block. The clamping arm is hinged to the rotating stage, and an elastic buffer layer is provided on the inner side of the clamping arm. The positioning block is fixedly connected to the end of the clamping arm, and a groove is formed on the side of the positioning block near the wafer, with a flexible contact pad embedded in the groove. Each wafer clamping device is locked and fixed to the rotating stage by bolts. The center of the bottom of the rotating stage... A drive motor is installed at the position, and the output shaft of the drive motor is fixedly connected to the rotary table to drive the rotary table to rotate. An annular guide rail is set on the outer periphery of the rotary table, and a slider is slidably connected on the annular guide rail. An ion source assembly is installed on the slider. The ion source assembly includes an ion generator and a focusing lens. The focusing lens is located at the outlet end of the ion generator and is connected to the ion generator through a flange. Multiple adjustable apertures are set inside the focusing lens. The apertures are connected to the housing of the focusing lens through a lead screw. One end of the lead screw extends to the outside of the focusing lens and is equipped with an adjustment knob. The ion source assembly moves along the annular guide rail by the slider to achieve ion beam coverage of different areas of the wafer.

[0006] Furthermore, it also includes a deflection correction mechanism; the deflection correction mechanism includes a correction plate and a fine-tuning component; the correction plate is located at the outlet end of the ion generator, and the correction plate has multiple through holes, the inner walls of which are coated with a metal coating; the fine-tuning component includes an adjusting screw and a guide rod, the adjusting screw is threadedly connected to the correction plate, and the guide rod passes through the correction plate and is arranged parallel to the adjusting screw; a handwheel is installed at one end of the adjusting screw, and the other end is movably connected to the ion generator housing; by rotating the handwheel, the correction plate moves along the axial direction of the adjusting screw, changing the emission angle of the ion beam, thereby compensating for the uneven ion beam distribution caused by the increase in wafer size.

[0007] Furthermore, the wafer clamping device also includes an auxiliary support component; the auxiliary support component is arc-shaped, and its two ends are respectively hinged to the inner side of the clamping arm; a spring is provided in the middle of the auxiliary support component, and the two ends of the spring are respectively fixed to the auxiliary support component and the clamping arm; when the wafer is placed in the clamping device, the auxiliary support component applies inward pressure to the wafer through the elastic force of the spring, ensuring that the wafer remains stable during the coating process.

[0008] Furthermore, a vibration damping structure is provided at the bottom of the rotary table; the vibration damping structure includes a damping pad and a damper; the damping pad is made of multiple layers of rubber material, with the top of the damping pad fitting against the bottom of the rotary table and the bottom fixedly connected to the top of the base; the damper is installed inside the damping pad, with both ends of the damper fixedly connected to the upper and lower layers of rubber material of the damping pad respectively; through the combined action of the damping pad and the damper, the wafer displacement or shaking caused by vibration during equipment operation is reduced.

[0009] Furthermore, a reflective layer is provided on the inner wall of the vacuum chamber; the reflective layer is composed of multiple layers of metal foil, each layer of metal foil is coated with a high reflectivity coating; the reflective layer is fixedly connected to the inner wall of the vacuum chamber by an adhesive; a heat sink is provided on the side of the reflective layer near the ion source assembly, and the heat sink is connected to the inner wall of the vacuum chamber by screws; a coolant channel is opened inside the heat sink, one end of the coolant channel is connected to an inlet pipe and the other end is connected to an outlet pipe; the coolant circulates and carries away the heat absorbed by the reflective layer, avoiding excessive temperature in the chamber that would affect the coating quality.

[0010] Furthermore, the elastic buffer layer on the inner side of the clamping arm is made of silicone material, and the surface of the elastic buffer layer is provided with anti-slip texture; the anti-slip texture is distributed in a grid pattern, and the depth of the anti-slip texture is 0.5mm to 1mm; the elastic buffer layer is fixedly connected to the inner side of the clamping arm by adhesive; the flexible contact pad on the positioning block is made of polyurethane material, and the thickness of the flexible contact pad is 2mm to 3mm; the flexible contact pad is connected to the groove of the positioning block by a buckle, which is convenient for replacement and maintenance.

[0011] Furthermore, a limiting groove is provided on the inner side of the annular guide rail, and a protrusion adapted to the limiting groove is provided on the bottom of the slider; the protrusion is embedded in the limiting groove, and when the slider slides along the annular guide rail, the protrusion and the limiting groove cooperate to prevent the slider from disengaging from the guide rail; a locking bolt is provided on the top of the slider, which passes through the slider and is threadedly connected to the annular guide rail; when the slider moves to the target position, the slider is fixed on the annular guide rail by tightening the locking bolt to ensure the stability of the ion source component position.

[0012] Furthermore, the focusing lens has three sets of adjustable apertures, each set consisting of multiple fan-shaped blades. The fan-shaped blades are hinged to the focusing lens housing via a rotating shaft, and a gear is installed at one end of the rotating shaft. The gear meshes with a lead screw. By rotating the adjustment knob, the lead screw drives the gear to rotate, and the gear drives the rotating shaft to rotate, thereby adjusting the opening angle of the fan-shaped blades and controlling the cross-sectional shape and size of the ion beam.

[0013] Furthermore, the calibration plate has six through holes, which are arranged in a circle with an included angle of 60° between adjacent through holes; the diameter of the through holes is 5mm to 10mm, and the thickness of the metal coating on the inner wall of the through holes is 0.1mm to 0.2mm; the metal coating is made of nickel-chromium alloy material and is attached to the inner wall of the through holes by electroplating.

[0014] The beneficial effects of this invention are as follows: In the coating process of large-size wafers, through the synergistic action of the rotary table and the wafer clamping device, the wafer can be coated in all directions after one clamping without frequent position adjustments, reducing the possibility of contamination or damage to the wafer surface; the elastic buffer layer and flexible contact pad in the clamping device effectively protect the wafer surface and avoid damage caused by excessive clamping force; the auxiliary support further enhances the stability of the wafer through the elastic force of the spring, ensuring that the wafer will not shift during the coating process.

[0015] The deflection correction mechanism compensates for the uneven ion beam distribution caused by the increase in wafer size by adjusting the position and angle of the correction plate, thereby improving the uniformity of the film layer. The adjustable aperture inside the focusing lens can adjust the cross-sectional shape and size of the ion beam according to actual needs to meet the requirements of different coating processes. The reflective layer and heat sink design inside the vacuum chamber effectively reduce the temperature inside the chamber and avoid the impact of high temperature on the coating quality. The vibration damping structure reduces vibration interference during equipment operation and improves the stability of equipment operation through the combined action of vibration damping pads and dampers.

[0016] In summary, this invention significantly improves the coating efficiency and film quality of large-size wafers by optimizing the design of wafer clamping, transmission, fixation, and ion beam distribution, while reducing operational complexity and time costs. It has high practicality and promotional value. Attached Figure Description

[0017] Figure 1This is a schematic diagram of the overall structure of the present invention, showing the main components of the coating machine, including a base, a rotating stage, a wafer clamping device, an ion source assembly, and a vacuum chamber; wherein, the rotating stage is located above the base, the wafer clamping devices are evenly distributed on the rotating stage, the ion source assembly is connected to the annular guide rail via a slider, and the whole assembly is placed in the vacuum chamber.

[0018] Figure 2 This utility model Figure 1 A partial structural diagram.

[0019] Figure 3 This utility model Figure 2 Enlarged view of point A.

[0020] The attached figures are labeled as follows: 1. Base; 2. Rotary stage; 3. Wafer clamping device; 4. Clamping arm; 5. Positioning block; 6. Elastic buffer layer; 7. Flexible contact pad; 8. Auxiliary support component; 9. Spring; 10. Ion source assembly; 11. Ion generator; 12. Focusing lens; 13. Adjustable aperture; 14. Correction plate; 15. Adjusting screw; 16. Handwheel; 17. Vacuum chamber; 18. Reflective layer; 19. Heat sink; 20. Circular guide rail; 21. Slider. Detailed Implementation

[0021] This utility model relates to an ion beam sputtering coating machine for large-size wafers, the structure of which is as follows: Figure 1 As shown, the main components include a base 1, a rotating stage 2, a wafer clamping device 3, an ion source assembly 10, a deflection correction mechanism, and a vacuum chamber 17. The specific implementation methods of each component are described in detail below with reference to the accompanying drawings.

[0022] The base 1 serves as the supporting structure for the entire device and is made of high-strength metal. Its top surface is precision-machined to ensure flatness. The rotary table 2 is bolted to the center of the base 1. A drive motor is located at the center of the bottom of the rotary table 2, and the output shaft of the drive motor is fixed to the central shaft of the rotary table 2 via a coupling, thereby enabling the rotary table 2 to rotate. An annular guide rail 20 is provided on the outer periphery of the rotary table 2. A limit groove is formed on the inner side of the annular guide rail 20. The bottom of the slider 21 has a protrusion that matches the limit groove. The protrusion is embedded in the limit groove, allowing the slider 21 to slide along the annular guide rail 20 without detaching from the track. A locking bolt is provided on the top of the slider 21. When the slider 21 moves to the target position, the locking bolt can be tightened to fix the slider 21 to the annular guide rail 20, ensuring the positional stability of the slider 21 during subsequent operations.

[0023] The wafer clamping devices 3 are evenly distributed on the upper surface of the rotary table 2. Each wafer clamping device 3 includes a clamping arm 4, a positioning block 5, and an auxiliary support 8. One end of the clamping arm 4 is connected to the rotary table 2 via a hinge, and the other end is fixedly connected to the positioning block 5. An elastic buffer layer 6 is provided on the inner side of the clamping arm 4. The elastic buffer layer 6 is made of silicone material and has a grid-like anti-slip texture on its surface. The depth of the anti-slip texture is 0.5mm to 1mm. The elastic buffer layer 6 is fixedly connected to the inner side of the clamping arm 4 by an adhesive. A groove is formed on the side of the positioning block 5 near the wafer. A flexible contact pad 7 is embedded in the groove. The flexible contact pad 7 is made of polyurethane material and has a thickness of 2mm to 3mm. The flexible contact pad 7 is connected to the groove of the positioning block 5 by a snap-fit, which facilitates replacement and maintenance. The auxiliary support 8 is arc-shaped, with its two ends connected to the inner side of the clamping arm 4 via hinges. A spring 9 is installed in the middle of the auxiliary support 8, with its two ends fixed to the auxiliary support 8 and the clamping arm 4, respectively. When the wafer is placed in the wafer clamping device 3, the auxiliary support 8 applies inward pressure to the wafer through the elastic force of the spring 9, thereby ensuring the wafer remains stable during the coating process. In addition, a vibration damping structure is provided at the bottom of the rotary table 2. The vibration damping structure includes a vibration damping pad made of multiple layers of rubber material and a damper installed inside the vibration damping pad. The top of the vibration damping pad is in contact with the bottom of the rotary table 2, and the bottom is fixedly connected to the top of the base 1. The two ends of the damper are fixed to the upper and lower layers of rubber material of the vibration damping pad, respectively. Through the combined action of the vibration damping pad and the damper, the wafer displacement or shaking caused by vibration during equipment operation is reduced.

[0024] The ion source assembly 10, mounted on the slider 21, includes an ion generator 11 and a focusing lens 12. The ion generator 11 is connected to the focusing lens 12 via a flange. The focusing lens 12 contains multiple adjustable apertures 13, each composed of multiple fan-shaped blades. These fan-shaped blades are hinged to the outer shell of the focusing lens 12 via a rotating shaft. A gear is mounted at one end of the rotating shaft, meshing with a lead screw. One end of the lead screw extends to the outside of the focusing lens 12 and is fitted with an adjustment knob. Rotating the adjustment knob causes the lead screw to rotate, which in turn drives the rotating shaft, thereby adjusting the opening angle of the fan-shaped blades and controlling the cross-sectional shape and size of the ion beam. The focusing lens 12, located at the outlet of the ion generator 11, is used to focus and shape the ion beam to improve its energy density and uniformity. As the slider 21 moves along the annular guide rail 20, the ion source assembly 10 moves accordingly, thus achieving ion beam coverage of different areas of the wafer.

[0025] The deflection correction mechanism includes a correction plate 14 and a fine-tuning assembly. The correction plate 14 is located at the outlet end of the ion generator 11. The correction plate 14 has six circularly distributed through holes, with an included angle of 60° between adjacent holes. The diameter of each through hole is 5mm to 10mm. A metallic coating, made of nickel-chromium alloy with a thickness of 0.1mm to 0.2mm, is applied to the inner wall of the through holes via electroplating. The fine-tuning assembly includes an adjusting screw 15 and a guide rod. The adjusting screw 15 is threadedly connected to the correction plate 14. The guide rod passes through the correction plate 14 and is parallel to the adjusting screw 15. A handwheel 16 is mounted on one end of the adjusting screw 15, and the other end is movably connected to the outer casing of the ion generator 11. By rotating the handwheel 16, the correction plate 14 moves axially along the adjusting screw 15, changing the emission angle of the ion beam and thus compensating for the uneven ion beam distribution caused by the increased wafer size.

[0026] The vacuum chamber 17 is a sealed metal shell with a reflective layer 18 on its inner wall. The reflective layer 18 is composed of multiple layers of metal foil, each coated with a high-reflectivity coating. The reflective layer 18 is fixedly connected to the inner wall of the vacuum chamber 17 by an adhesive. A heat sink 19 is provided on the side of the reflective layer 18 closest to the ion source assembly 10. The heat sink 19 is connected to the inner wall of the vacuum chamber 17 by screws. A coolant channel is provided inside the heat sink 19, with an inlet pipe connected to one end and an outlet pipe connected to the other end. The circulating coolant carries away the heat absorbed by the reflective layer 18, preventing excessively high temperatures inside the chamber from affecting the coating quality.

[0027] In practical applications, the wafer is first placed in the wafer clamping device 3 and initially fixed by the clamping arm 4 and positioning block 5. The auxiliary support 8 further enhances the stability of the wafer through the elastic force of the spring 9. Then, the vacuum pump is started to evacuate the vacuum chamber 17 to the required vacuum level, ensuring that the coating process is carried out in a high vacuum environment. The drive motor drives the rotary table 2 to rotate, so that the wafer on the wafer clamping device 3 rotates with the rotary table 2, thereby achieving full-range exposure of the wafer surface. The slider 21 moves along the annular guide rail 20, driving the ion source assembly 10 to cover different areas of the wafer with ion beams. During this process, the cross-sectional shape and size of the ion beam can be adjusted by adjusting the adjustable aperture 13 inside the focusing lens 12 to meet different coating requirements. When the wafer size is large, the position and angle of the correction plate 14 can be adjusted by rotating the handwheel 16 to optimize the uniformity of the ion beam distribution. During the coating process, the coolant circulates through the coolant channel of the heat sink 19, effectively reducing the temperature inside the chamber. At the same time, the reflective layer 18 reflects excess heat back into the chamber, further improving the coating quality. To enable those skilled in the art to fully understand and implement this utility model, the following detailed explanation of the operating principle and implementation process of the coating machine is provided in conjunction with specific application scenarios.

[0028] In practical applications, the large-sized wafer to be coated is first placed in the wafer clamping device 3 and initially fixed by the clamping arm 4 and positioning block 5. Specifically, one side of the wafer contacts the elastic buffer layer 6 on the inner side of the clamping arm 4. The elastic buffer layer 6 is made of silicone material, and its surface has a grid-like anti-slip texture that effectively increases friction and prevents the wafer from sliding during clamping. At the same time, the flexible contact pad 7 embedded at the end of the positioning block 5 contacts the other side of the wafer. The flexible contact pad 7 is made of polyurethane material with a thickness of 2mm to 3mm, which can ensure clamping stability while avoiding damage to the wafer surface. The auxiliary support 8 applies inward pressure to the wafer through the elastic force of the spring 9, ensuring that the wafer remains stable throughout the coating process. In addition, the shock-absorbing structure at the bottom of the rotary table 2 works together with the shock-absorbing pad made of multiple layers of rubber material and the internal damper to reduce wafer displacement or shaking caused by vibration during equipment operation, further improving the stability of the coating process.

[0029] Subsequently, the vacuum pump is activated to evacuate the vacuum chamber 17 to the required vacuum level, ensuring that the coating process is carried out in a high-vacuum environment. The drive motor rotates the rotary table 2, causing the wafer on the wafer holder 3 to rotate along with the rotary table 2, thus achieving full-range exposure of the wafer surface. During this process, the rotation speed of the rotary table 2 is adjustable to meet the ion beam coverage time requirements of different coating processes. As the slider 21 moves along the annular guide rail 20, it drives the ion source assembly 10 mounted thereon to cover different areas of the wafer with the ion beam. The focusing lens 12 in the ion source assembly 10 adjusts the cross-sectional shape and size of the ion beam by adjusting the internal adjustable aperture 13. Specifically, the operator can rotate the adjustment knob to drive the lead screw to rotate, which in turn drives the gear to rotate, and the gear further drives the rotating shaft to rotate, thereby adjusting the opening angle of the fan-shaped blades and controlling the cross-sectional shape and size of the ion beam. This design allows the ion beam to be flexibly adjusted according to actual needs, meeting the requirements of different coating processes.

[0030] When the wafer size is large, the uniformity of the ion beam distribution may be affected by the increased wafer size, leading to uneven local coating thickness. In this case, the position and angle of the calibration plate 14 are adjusted by rotating the handwheel 16 to optimize the uniformity of the ion beam distribution. Specifically, the calibration plate 14 moves axially along the adjusting screw 15, changing the emission angle of the ion beam, thereby compensating for the uneven ion beam distribution caused by the increased wafer size. The calibration plate 14 has six circularly distributed through-holes, with an included angle of 60° between adjacent through-holes. The inner walls of the through-holes are coated with a metal coating made of nickel-chromium alloy with a thickness of 0.1 mm to 0.2 mm. The metal coating is attached to the inner walls of the through-holes through an electroplating process, effectively improving the transmission efficiency and stability of the ion beam.

[0031] During the coating process, the reflective layer 18 and the heat sink 19 within the vacuum chamber 17 work together to ensure that the temperature inside the chamber is maintained within a suitable range. The reflective layer 18 is composed of multiple layers of metal foil, each coated with a high-reflectivity coating, which reflects excess heat back into the chamber, preventing heat accumulation from affecting the coating quality. The heat sink 19 is connected to the inner wall of the vacuum chamber 17 by screws, and its internal coolant channels are connected to an external cooling system via inlet and outlet pipes. The coolant circulates within the channels, carrying away the heat absorbed by the reflective layer 18, further reducing the temperature inside the chamber, and ensuring that the coating process takes place in a stable thermal environment.

[0032] Through the above steps, this invention achieves the goal of completing all-around coating of large-size wafers in a single clamping operation, significantly reducing the possibility of wafer surface contamination or damage. Simultaneously, the elastic buffer layer 6 and flexible contact pad 7 in the clamping device effectively protect the wafer surface, preventing damage caused by excessive clamping force. The auxiliary support 8 further enhances wafer stability through the elastic force of the spring 9, ensuring that the wafer does not shift during the coating process. The deflection correction mechanism compensates for the uneven ion beam distribution caused by the increased wafer size by adjusting the position and angle of the correction plate 14, improving film uniformity. The adjustable aperture 13 inside the focusing lens 12 can adjust the cross-sectional shape and size of the ion beam according to actual needs, meeting the requirements of different coating processes. The reflective layer 18 and heat sink 19 inside the vacuum chamber 17 effectively reduce the temperature inside the chamber, avoiding the impact of high temperature on coating quality. The vibration damping structure, through the combined action of the damping pads and dampers, reduces vibration interference during equipment operation, improving equipment operational stability.

[0033] In summary, this invention significantly improves the coating efficiency and film quality of large-size wafers by optimizing the design of wafer clamping, transmission, fixation, and ion beam distribution, solving the problems existing in the prior art, and has high practicality and promotion value.

[0034] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. An ion beam sputtering coating machine for large-size wafers, comprising a base (1), a rotating stage (2), a wafer clamping device (3), an ion source assembly (10), an adjustment mechanism, and a vacuum chamber (17); the base (1) is provided with a rotating stage (2), and at least two wafer clamping devices (3) are installed on the rotating stage (2); the wafer clamping device (3) includes a clamping arm (4) and a positioning block (5), the clamping arm (4) is hinged to the rotating stage (2), and an elastic buffer layer (6) is provided on the inner side of the clamping arm (4); the positioning block (5) is fixedly connected to the end of the clamping arm (4), and a groove is provided on the side of the positioning block (5) near the wafer, and a flexible contact pad (7) is embedded in the groove; each wafer clamping device (3) is locked to the rotating stage (2) by bolts. The rotating platform (2) is equipped with a drive motor at the bottom center, and the output shaft of the drive motor is fixedly connected to the rotating platform (2); an annular guide rail (20) is provided on the outer periphery of the rotating platform (2), and a slider (21) is slidably connected on the annular guide rail (20). An ion source assembly (10) is installed on the slider (21); the ion source assembly (10) includes an ion generator (11) and a focusing lens (12). The focusing lens (12) is located at the outlet end of the ion generator (11) and is connected to the ion generator (11) through a flange; multiple adjustable apertures (13) are provided inside the focusing lens (12). The adjustable apertures (13) are connected to the housing of the focusing lens (12) through a lead screw. One end of the lead screw extends to the outside of the focusing lens (12) and is equipped with an adjustment knob; its characteristics are: The ion source assembly (10) moves along the annular guide rail (20) via the slider (21) to achieve ion beam coverage of different areas of the wafer.

2. An ion beam sputtering coating machine for large-size wafers according to claim 1, characterized in that: It also includes a deflection correction mechanism; the deflection correction mechanism includes a correction plate (14) and a fine-tuning component; the correction plate (14) is located at the outlet end of the ion generator (11), and multiple through holes are provided on the correction plate (14), with a metal coating on the inner wall of the through holes; the fine-tuning component includes an adjusting screw (15) and a guide rod, the adjusting screw (15) is threadedly connected to the correction plate (14), and the guide rod passes through the correction plate (14) and is arranged parallel to the adjusting screw (15); a handwheel (16) is installed at one end of the adjusting screw (15), and the other end is movably connected to the outer shell of the ion generator (11).

3. An ion beam sputtering coating machine for large-size wafers according to claim 1, characterized in that: The wafer clamping device (3) also includes an auxiliary support (8); the auxiliary support (8) is arc-shaped, and both ends of the auxiliary support (8) are hinged to the inner side of the clamping arm (4); a spring (9) is provided in the middle of the auxiliary support (8), and both ends of the spring (9) are fixed to the auxiliary support (8) and the clamping arm (4) respectively.

4. An ion beam sputtering coating machine for large-size wafers according to claim 1, characterized in that: The bottom of the rotating platform (2) is provided with a shock-absorbing structure; the shock-absorbing structure includes a shock-absorbing pad and a damper; the shock-absorbing pad is made of multiple layers of rubber material, the top of the shock-absorbing pad is attached to the bottom of the rotating platform (2), and the bottom is fixedly connected to the top of the base (1); the damper is installed inside the shock-absorbing pad, and the two ends of the damper are fixedly connected to the upper and lower layers of rubber material of the shock-absorbing pad respectively.

5. An ion beam sputtering coating machine for large-size wafers according to claim 1, characterized in that: A reflective layer (18) is provided on the inner wall of the vacuum chamber (17); the reflective layer (18) is composed of multiple layers of metal foil, and each layer of metal foil is coated with a high reflectivity coating; the reflective layer (18) is fixedly connected to the inner wall of the vacuum chamber (17) by an adhesive; a heat sink (19) is provided on the side of the reflective layer (18) near the ion source assembly (10), and the heat sink (19) is connected to the inner wall of the vacuum chamber (17) by screws; a coolant channel is opened inside the heat sink (19), one end of the coolant channel is connected to an inlet pipe, and the other end is connected to an outlet pipe.

6. An ion beam sputtering coating machine for large-size wafers according to claim 1, characterized in that: The elastic buffer layer (6) on the inner side of the clamping arm (4) is made of silicone material. The surface of the elastic buffer layer (6) is provided with a grid-like distribution of anti-slip texture, and the depth of the anti-slip texture is 0.5 mm to 1 mm. The elastic buffer layer (6) is fixedly connected to the inner side of the clamping arm (4) by an adhesive. The flexible contact pad (7) on the positioning block (5) is made of polyurethane material, and the thickness of the flexible contact pad (7) is 2 mm to 3 mm. The flexible contact pad (7) is connected to the groove of the positioning block (5) by a buckle.

7. An ion beam sputtering coating machine for large-size wafers according to claim 1, characterized in that: A limiting groove is provided on the inner side of the annular guide rail (20), and a protrusion adapted to the limiting groove is provided at the bottom of the slider (21). The protrusion is embedded in the limiting groove. When the slider (21) slides along the annular guide rail (20), the protrusion and the limiting groove cooperate to prevent the slider (21) from leaving the guide rail. A locking bolt is provided on the top of the slider (21). The locking bolt passes through the slider (21) and is threadedly connected to the annular guide rail (20).

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