Thermal superconducting device and electronic equipment

Abstract

The utility model relates to heat dissipation equipment, and discloses a heat superconducting device and electronic equipment, so as to improve the working performance of the electronic equipment. The thermal superconducting device at least comprises a first structural layer, a second structural layer and a third structural layer, the third structural layer at least comprises two-stage micron structure groups, and the first-stage micron structure group is composed of micron-scale through hole groups. The thickness of the first-level micron structure group is smaller than or equal to 30 microns, and the aperture of the micron-scale through holes is larger than or equal to 10 microns and smaller than or equal to 500 microns.

Description

Technical Field

[0001] This application relates to the field of heat dissipation equipment technology, and in particular to a thermal superconducting device and electronic equipment. Background Technology

[0002] With the increasing integration of functions in terminal electronic devices, power consumption and heat generation are also increasing dramatically. Terminal electronic devices require thinner and lighter designs to meet portability needs, while also demanding long battery life with large batteries. This results in a significant distance between the heat source and heat dissipation points along the length of the device, posing a major challenge to the design of thermal superconducting devices such as vapor chambers (VCs) used in current electronic devices. A thermal superconducting device is a negative-pressure cavity structure with an internal capillary structure and filled with a working fluid. It utilizes the gas-liquid phase change cycle of the internal working fluid during heating and cooling to rapidly transfer heat. In existing technologies, the gas-liquid evaporation and condensation phase change in thermal superconducting devices occur in the thickness direction, while the flow of the internal working fluid occurs in the length and width directions. Because the length dimension of a thermal superconducting device is much larger than its thickness dimension, and the pore size of existing capillary structures such as wire mesh and sintered copper powder is close to or even smaller in the length and thickness directions, the flow resistance of the working fluid is very high. This significantly affects the long-distance recirculation of the internal working fluid, and in severe cases, can lead to the thermal superconducting device burning out and failing. Utility Model Content

[0003] This application provides a thermal superconducting device and an electronic device to improve the working performance of the electronic device.

[0004] In a first aspect, this application provides a thermal superconducting device. The thermal superconducting device comprises at least a first structural layer, a second structural layer, and a third structural layer. The third structural layer includes a first-order micron-scale structure group, which is composed of a group of micron-scale vias. The thickness of the first-order micron-scale structure group is ≤30 μm, and the pore size of the micron-scale vias is ≥10 μm and ≤500 μm.

[0005] Understandably, compared to traditional wire mesh capillary structures, the thickness of the first-level micron structure group of the thermal superconducting device provided in this application is ≤30µm, which can be even smaller and applied to ultra-thin applications. Furthermore, the aperture of the micron-scale through-holes is ≥10µm and ≤500µm, which is smaller, resulting in stronger capillary force and stronger working fluid transport capability, and can more effectively support heat dissipation in higher power scenarios.

[0006] In some embodiments, the third structural layer further includes a second-level microstructure group, which at least partially comprises micron-scale arrayed columnar and / or strip-shaped feature structures. The second-level microstructure group is disposed between the first-level microstructure group and the first structural layer. The size and spacing of the arrayed columnar and / or strip-shaped structures are ≥10 μm and ≤500 μm.

[0007] In this application, the thermal superconducting device, through a unique design combining multiple levels of micron-sized structures, can simultaneously modulate capillary force and fluid flow resistance. Specifically, at least one level of micron-sized structures in the third structural layer is designed primarily to modulate capillary force, while at least one level of micron-sized structures is designed primarily to modulate fluid flow resistance. This design effectively solves the problem of limited liquid return capacity of a single type of capillary structure and allows for size adjustment according to actual needs, improving the performance of electronic devices while meeting the application requirements of thin and light electronic devices.

[0008] In some implementations, the micron-scale array of columnar and / or strip-shaped features contained in the second-level micron structure group can be at least partially integrally formed with the first-level micron structure group. For example, it can be integrally processed using processes such as chemical etching based on an ultrathin metal foil as a carrier. This reduces processing steps, saves costs, and also allows for ultrathin fabrication, thus meeting the needs of ultrathin applications.

[0009] In some implementations, the micron-scale array of columnar and / or strip-shaped features contained in the second-level micron-structure group may also be at least partially integrally formed with the first structural layer. This can improve the overall stiffness of the first structural layer, thereby meeting the requirements of load-bearing scenarios.

[0010] In some embodiments, the second-level microstructure group further includes multiple columnar and / or strip-shaped feature structures arranged non-uniformly at the micrometer scale. The micrometer-scale array of columnar and / or strip-shaped feature structures and the multiple micrometer-scale non-uniformly arranged columnar and / or strip-shaped feature structures are spaced apart. The size and spacing of the multiple micrometer-scale non-uniformly arranged columnar and / or strip-shaped feature structures are both ≥10 μm and ≤500 μm.

[0011] It is understood that the second-level micron structure group can include multiple columnar and / or strip-shaped feature structures arranged in an array, as well as multiple columnar and / or strip-shaped feature structures arranged non-uniformly. The multiple columnar and / or strip-shaped feature structures arranged non-uniformly can be placed at any location within the second-level micron structure group as needed. The micron-sized columnar and / or strip-shaped feature structures included in the second-level micron structure group can be designed according to requirements.

[0012] In some implementations, the thickness of the second-level micron structure group in the third structural layer is greater than or equal to the thickness of the first-level micron structure group. This allows the second-level micron structure group to have sufficient liquid storage capacity and less liquid backflow resistance, while also facilitating rapid and effective evaporation of the liquid through the first-level micron structure group, thereby ensuring better heat dissipation performance.

[0013] In some implementations, the first-level micron structure group includes at least a first region and a second region. The pore size and / or pore spacing of the first region differs from those of the second region. For example, in the use of a thermal superconducting device, the first region is closer to the heat source, and the second region is farther from the heat source. In design, the pore size and / or pore spacing of the first region is less than or equal to the pore size and / or pore spacing of the second region. This allows the liquid to evaporate and condense in the second region, then rapidly flow back to the second-level micron structure group in the fourth region through the larger micropores of the first-level micron structure group in the second region. This is because, under the premise of sufficient capillary force, larger pores result in lower backflow resistance, thus ensuring sufficient liquid backflow. Simultaneously, smaller pore size and pore spacing in the first-level micron structure group of the first region result in a larger evaporation surface area and higher evaporation efficiency, allowing more heat to be carried away from the heat source region. Furthermore, smaller pores provide stronger capillary force, accelerating the liquid's return flow from the second region to the first region.

[0014] In some embodiments, the first-order micron structure group includes a first region and a second region, the first region being located in the evaporation chamber of the thermal superconducting device, and the second region being located in the condensation chamber of the thermal superconducting device. The pore size and / or pore spacing of the first-order micron structure group in the first region is less than or equal to the pore size and / or pore spacing of the first-order micron structure group in the second region.

[0015] In some implementations, the second-level micron-structure group includes at least a third region and a fourth region. The dimensions and / or spacing of the micron-scale arrayed columnar and / or strip-shaped features in the third region differ from those in the fourth region. For example, in the case of a thermal superconducting device, the third region is located near the heat source, and the fourth region is located away from the heat source. In design, the dimensions and / or spacing of the arrayed columnar and / or strip-shaped features in the third region are less than or equal to the dimensions and / or spacing of the arrayed columnar and / or strip-shaped features in the fourth region. This ensures that after the liquid condenses in the second region, it flows back through the micropores of the first-level micron-structure group to the arrayed columnar and / or strip-shaped features of the second-level micron-structure group. Because the spacing in the fourth region is larger, the resistance to the liquid flowing back from the second-level micron-structure group in the fourth region to the second-level micron-structure group in the third region is smaller, thus ensuring a faster return rate and volume. In addition, the array of columnar and / or strip-shaped feature structures in the fourth region are larger in size, thus providing effective support for the first-level micron structure group while ensuring lower flow resistance.

[0016] In some embodiments, the second-order micron structure group includes a third region and a fourth region, wherein the third region is located in the evaporation chamber of the thermal superconducting device, and the fourth region is located in the condensation chamber of the thermal superconducting device. The size and / or spacing of the micron-scale array columnar and / or strip-shaped feature structures of the second-order micron structure group in the third region are less than or equal to the size and / or spacing of the micron-scale array columnar and / or strip-shaped feature structures of the second-order micron structure group in the fourth region.

[0017] In some embodiments, the first-level micron structure group includes a first region and a second region, the first region being located in the evaporation chamber of the thermal superconducting device, and the second region being located in the condensation chamber of the thermal superconducting device. The pore size and / or pore spacing of the first-level micron structure group in the first region is less than or equal to the pore size and / or pore spacing of the first-level micron structure group in the second region. The second-level micron structure group includes a third region and a fourth region, the third region being located in the evaporation chamber of the thermal superconducting device, and the fourth region being located in the condensation chamber of the thermal superconducting device. The size and / or spacing of the micron-scale array columnar and / or strip-shaped feature structures of the second-level micron structure group in the third region is less than or equal to the size and / or spacing of the micron-scale array columnar and / or strip-shaped feature structures of the second-level micron structure group in the fourth region. Along the thickness direction of the thermal superconducting device, the first region and the third region are arranged opposite to each other; and / or, the second region and the fourth region are arranged opposite to each other.

[0018] It is understandable that, compared to the scheme in which the first and third regions are staggered along the thickness direction of the thermal superconducting device, in this embodiment the first and third regions are arranged opposite each other. The working fluid in the second-level micron structure group in the third region can quickly evaporate through the micropores of the first-level micron structure group in the first region, thereby quickly removing heat.

[0019] Compared to the scheme where the second and fourth regions are staggered along the thickness direction of the thermal superconducting device, in this embodiment the second and fourth regions are arranged opposite each other. After the working fluid condenses in the second region, it can quickly flow back through the micropores of the first-level micron structure group in the second region to the micron-scale array columnar and / or strip-shaped feature structures of the second-level micron structure group in the fourth region.

[0020] In some implementations, the third structural layer further includes a third-level micron structure group, which consists of at least one micron-scale porous structure with a porosity of ≥5% and ≤50%. The porous structure is at least disposed on one side of the first-level micron structure group (103a) and the first or second structural layer, that is, the porous structure is at least disposed between the first-level micron structure group and the first structural layer, and / or the porous structure is at least disposed between the first-level micron structure group and the second structural layer. If the third-level micron structure group is a structure such as a woven mesh or sintered powder particles, it complements the first-level micron structure group and / or the second-level micron structure group, and is mainly arranged near the heat source area. The purpose is to further increase the liquid storage capacity at the heat source location, thereby supporting the heat dissipation requirements of higher power consumption scenarios.

[0021] In some implementations, the third-level micron structure cluster is located in the evaporation chamber of the thermal superconducting device. Thus, when the thermal superconducting device dissipates heat, the evaporation chamber is close to the heat source, and the third-level micron structure cluster can further increase the liquid storage capacity at the heat source location, thereby supporting the heat dissipation requirements of higher power consumption scenarios.

[0022] In some implementations, the grain structure of the first-level micron structure group and / or the second-level micron structure group includes at least columnar or strip-shaped structures, which are arranged parallel to the thickness direction of the first-level micron structure group and / or the second-level micron structure group. This ensures good etching uniformity of the first-level micron structure group and / or the second-level micron structure group during the etching process, thereby ensuring better performance.

[0023] In some implementations, the grain structure of the first-level micron structure group / or the second-level micron structure group includes at least columnar or strip-shaped structures, and the columnar or strip-shaped structures may be arranged perpendicular to the thickness direction of the first-level micron structure group / or the second-level micron structure group. In this way, when the thickness of the first-level micron structure group and / or the second-level micron structure group is very thin, such as ≤30um, the etching process is usually carried out in the form of roll material, which can ensure better tension and prevent the material from being torn or broken during the processing, greatly improving the yield and mass production capability in ultra-thin processing scenarios.

[0024] In some implementations, the second structural layer at least partially comprises columnar and / or strip-shaped structures, the width or diameter of which is greater than or equal to the spacing between the micron-scale array columnar and / or strip-shaped features contained in the second-level micron-structure group. Because the sealed cavity composed of the first and second structural layers is under negative pressure, when the columnar and / or strip-shaped structures on the second structural layer are larger than the spacing between the micron-scale array columnar and / or strip-shaped features contained in the second-level micron-structure group, the first-level micron-structure group can be effectively prevented from being crushed or punctured, thereby avoiding any impact on performance.

[0025] In some implementations, the first and second structural layers enclose a vacuum cavity, and the third structural layer is disposed within the vacuum cavity.

[0026] It is understandable that the first and second structural layers can be used to enclose a vacuum cavity for placing the third structural layer.

[0027] In some implementations, the thermal superconducting device also includes a working fluid stored within a vacuum chamber. When the thermal superconducting device is used for heat dissipation, a portion of the working fluid is in a liquid state within the third structural layer, and a portion is in a gaseous state within the vacuum chamber. The vacuum chamber has an evaporation chamber and a condensation chamber, with the third structural layer extending from the evaporation chamber to the condensation chamber. When the thermal superconducting device is used for heat dissipation, the evaporation chamber is closer to the heat source, and the condensation chamber is farther from the heat source. The working fluid absorbs heat in the evaporation chamber, changing from a liquid state to a gaseous state. The gaseous working fluid moves from the evaporation chamber to the condensation chamber, and releases heat in the condensation chamber, changing from a gaseous state to a liquid state. The liquid working fluid then returns from the condensation chamber to the evaporation chamber through the third structural layer.

[0028] It is understandable that the working fluid undergoes a phase change within the vacuum chamber to achieve the process of heat absorption and release. The third structural layer can be used for the transfer of the liquid working fluid between the evaporation chamber and the condensation chamber. The third structural layer includes a first-level micron structure group, with micron-scale through-holes having a pore size greater than or equal to 10 μm and less than or equal to 500 μm. The smaller pore size results in stronger capillary force and stronger working fluid transfer capability, which can more effectively support heat dissipation in higher power scenarios.

[0029] Secondly, this application provides an electronic device. The electronic device includes a heat-generating device and a thermal superconducting device. The thermal superconducting device is used to dissipate heat from the heat-generating device. Attached Figure Description

[0030] Figure 1 This is a schematic cross-sectional view of the thickness direction of a thermal superconducting device provided in an embodiment of this application;

[0031] Figure 2 A cross-sectional view in the thickness direction of a first-order micron structure group provided for an embodiment of this application;

[0032] Figure 3-1 A cross-sectional view in the thickness direction of a second-order micron structure group provided for an embodiment of this application;

[0033] Figure 3-2 A top view of the second-order micron structure group provided in the embodiments of this application;

[0034] Figure 4 A cross-sectional schematic diagram showing the second-level micron structure group and the first-level micron structure group integrally formed in the thickness direction, as provided in the embodiments of this application;

[0035] Figure 5 A cross-sectional schematic diagram showing the second-level micron structure group integrally formed with the first structural layer in the thickness direction, as provided in an embodiment of this application;

[0036] Figure 6-1 A cross-sectional schematic diagram of one embodiment of the second-level micron structure group and the first-level micron structure group provided in the embodiments of this application in the thickness direction;

[0037] Figure 6-2 A cross-sectional schematic diagram of another embodiment of the second-level micron structure group and the first-level micron structure group provided in the embodiments of this application in the thickness direction;

[0038] Figure 7 A top view of the first-order micron structure group provided in the embodiments of this application, including a first region and a second region;

[0039] Figure 8-1 A top view of one embodiment of the micron-scale array columnar and / or strip-shaped feature structures included in the second-level micron structure group provided in this application;

[0040] Figure 8-2 A top view of another embodiment of the micron-scale array columnar and / or strip-shaped feature structures included in the second-level micron structure group provided in this application;

[0041] Figure 9-1 A schematic diagram showing the correspondence between the third-level micron structure group and the first structural layer, the second structural layer and the first-level micron structure group in one embodiment of this application;

[0042] Figure 9-2A schematic diagram showing the correspondence between the third-level micron structure group and the first structural layer, the second structural layer and the first-level micron structure group provided in the embodiments of this application;

[0043] Figure 10 A schematic diagram showing the parallel correspondence between the grain structure and thickness of the first-level micron structure group and / or the second-level micron structure group provided in the embodiments of this application;

[0044] Figure 11 A schematic diagram showing the vertical correspondence between the grain structure and thickness of the first-level micron structure group and / or the second-level micron structure group provided in the embodiments of this application;

[0045] Figure 12 A schematic relationship between the dimensions of the columnar and / or strip-shaped structures included in the second structural layer provided in the embodiments of this application and the dimensions of the second-level micron structure group;

[0046] Figure 13 This is a schematic diagram of one embodiment of the electronic device provided in this application.

[0047] Figure 14 yes Figure 13 A partially exploded view of one embodiment of the electronic device shown;

[0048] Figure 15 yes Figure 13 The diagram shows a partial structural diagram of the electronic device in one embodiment on line AA;

[0049] Figure 16 This is a schematic diagram of another embodiment of the electronic device provided in this application;

[0050] Figure 17 This is a schematic diagram of another embodiment of the electronic device provided in this application;

[0051] Figure 18 This is a schematic diagram of another embodiment of the electronic device provided in this application.

[0052] Figure label:

[0053] 10-Thermal superconducting device; 101-First structural layer; 102-Second structural layer; 103-Third structural layer;

[0054] 103a - First-order micron structure group; 103b - Second-order micron structure group; 103c - Third-order micron structure group

[0055] 103b1 - columnar structure; 103b2 - strip-like structure

[0056] 103c1-Porous Structure Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be further described in detail below with reference to the accompanying drawings. However, the exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein. The same reference numerals in the figures denote the same or similar structures, and therefore repeated descriptions of them will be omitted. The terms expressing position and direction described in the embodiments of this application are illustrative based on the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this application. The accompanying drawings of the embodiments of this application are for illustrating relative positional relationships only and do not represent actual scale.

[0058] In the description of the embodiments of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation" and "connection" should be interpreted broadly. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. "Fixed connection" refers to a connection where the relative positional relationship remains unchanged after connection. "Rotary connection" refers to a connection where the components can rotate relative to each other after connection. "Sliding connection" refers to a connection where the components can slide relative to each other after connection. The directional terms mentioned in the embodiments of this application, such as "up," "down," "left," "right," "inner," and "outer," are only for reference to the directions in the accompanying drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of this application, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application. "Multiple" means at least two.

[0059] In the embodiments of this application, "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent three cases: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0060] In the embodiments of this application, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," "third," and "fourth" may explicitly or implicitly include one or more of that feature.

[0061] Furthermore, the limitations on relative positional relationships mentioned in the embodiments of this application, such as parallel, perpendicular, and aligned, are all relative to the current technological level and are not absolutely strict limitations. Slight deviations are allowed; approximations of parallelism, perpendicularity, and alignment are all acceptable. For example, "A and B are parallel" means that A and B are parallel or approximately parallel, and the angle between A and B can be between 0 degrees (°) and 10 degrees. Similarly, "A and B are perpendicular" means that A and B are perpendicular or approximately perpendicular, and the angle between A and B can be between 80 degrees and 100 degrees.

[0062] Connection / linking: can refer to a mechanical or physical connection, that is, A and B are connected or linked. It can mean that there are fastening components (such as screws, bolts, rivets, etc.) between A and B, or that A and B are in contact with each other and are difficult to separate.

[0063] It should be noted that specific details are set forth in the following description to facilitate understanding of this application. However, the embodiments of this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the embodiments of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0064] It is understood that the specific embodiments described herein are merely for explaining the relevant application and not for limiting the application. It should also be noted that, for ease of description, only the parts relevant to the application are shown in the accompanying drawings.

[0065] The thermal superconducting device 10 is a commonly used heat dissipation device in electronic devices. It is a vacuum cavity structure formed by a first structural layer 101 and a second structural layer 102. The third structural layer 103, which contains at least first-order micron structure groups 103a and second-order micron structure groups 103b, has capillary force and is disposed inside the vacuum cavity formed by the first structural layer 101 and the second structural layer 102. The liquid working fluid is stored within the third structural layer 103. When the thermal superconducting device 10 is used for heat dissipation, part of the working fluid is in a liquid state within the third structural layer 103, and part is in a gaseous state within the vacuum cavity. The basic working principle of the thermal superconducting device 10 is as follows: the liquid working fluid absorbs heat conducted by the heat source electronic device at one end of the vacuum cavity (referred to as the "evaporation cavity") and is converted into a vapor working fluid. The vapor working fluid moves from the evaporation cavity to the other end of the vacuum cavity (referred to as the "condensation cavity"). The vapor working fluid condenses and releases heat at the other end of the vacuum cavity (referred to as the "condensation cavity") and is converted back into a liquid working fluid. The third structural layer 103 extends from the evaporation cavity to the condensation cavity. The liquid working fluid flows back from the condensation cavity to the evaporation cavity through the capillary action of the third structural layer 103, and this cycle continues continuously to achieve continuous heat dissipation for the heat source electronic device. It is understood that in some embodiments, the thermal superconducting device 10 may have other parts besides the evaporation cavity and the condensation cavity, such as a transition section between the evaporation cavity and the condensation cavity.

[0066] The third structural layer 103 is a key component for the thermal superconducting device 10 to achieve heat dissipation. In related technologies, the third structural layer 103 generally adopts a wire mesh capillary structure, a powder sintered capillary structure, a trench capillary structure, or a composite capillary structure of two or more of the above types. Among these, wire mesh and powder sintered capillary structures have relatively strong capillary force but low permeability, resulting in greater resistance to transporting the liquid working fluid. Trench capillary structures have relatively good permeability and low transport resistance, but weaker capillary force. Therefore, a third structural layer 103 using a single capillary structure often struggles to balance strong capillary force and high permeability, limiting its liquid return capability. While composite capillary structures, such as a wire mesh and trench composite or a powder sintered and trench composite, can balance capillary force and permeability to some extent, they are often too thick, failing to meet the application requirements of thin and light electronic devices.

[0067] In view of this, embodiments of this application provide a thermal superconducting device 10 to improve its heat dissipation performance without increasing its thickness, thereby enhancing the operating performance of electronic devices. The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0068] Figure 1 This is a schematic diagram of the structure of a thermal superconducting device 10 provided in an embodiment of this application. (Reference) Figure 1As shown, in some embodiments of this application, the thermal superconducting device 10 includes at least a first structural layer 101, a second structural layer 102, and a third structural layer 103. The third structural layer 103 includes at least two levels of micron-scale structure groups. The first level micron-scale structure group 103a is composed of micron-scale via groups; the second level micron-scale structure group 103b at least partially includes micron-scale array columnar 103b1 and / or strip-shaped 103b2 feature structures. In some embodiments of this application, the third structural layer 103 may also include only the first level micron-scale structure group 103a.

[0069] Understandably, compared to traditional wire mesh capillary structures, the thickness of the first-level micron structure group 103a of the thermal superconducting device 10 provided in this application is less than or equal to 30 μm, and the thickness can be even smaller, making it suitable for ultra-thin applications. Furthermore, the aperture of the micron-scale through-holes in the first-level micron structure group 103a is greater than or equal to 10 μm and less than or equal to 500 μm. With smaller apertures, stronger capillary forces, and stronger working fluid transport capabilities, it can more effectively support heat dissipation in higher power scenarios.

[0070] Figure 2 This is a cross-sectional view in the thickness direction of the first-level microstructure group 103a provided in the embodiment of this application. The thickness of the first-level microstructure group 103a is less than or equal to 30 micrometers (um), and the aperture of the micrometer-scale through hole is greater than or equal to 10um and less than or equal to 500um.

[0071] Figure 3-1 A cross-sectional view in the thickness direction of the second-level micron structure group 103b provided in the embodiments of this application. Figure 3-2 This is a top view of the second-level microstructure group 103b provided in an embodiment of this application. The second-level microstructure group 103b is disposed between the first-level microstructure group 103a and the first structural layer 101. The dimensions and spacing of the micrometer-scale array columnar 103b1 and / or strip-shaped 103b2 structures are all greater than or equal to 10 μm and less than or equal to 500 μm.

[0072] In one possible implementation, the second-level microstructure group 103b may further include multiple columnar 103b3 and / or multiple stripe 103b4 feature structures arranged non-uniformly at the micrometer level. The micrometer-level arrayed columnar 103b1 and / or stripe 103b2 feature structures and the multiple micrometer-level non-uniformly arranged columnar 103b3 and / or stripe 103b4 feature structures are spaced apart. The size and spacing of the multiple micrometer-level non-uniformly arranged columnar 103b3 and / or stripe 103b4 feature structures are both ≥10µm and ≤500µm. It is understood that among the micrometer-level columnar and / or stripe feature structures included in the second-level microstructure group 103b, a portion of the columnar and / or stripe feature structures may be arranged in an array, and a portion may be arranged non-uniformly. The multiple non-uniformly arranged micrometer-level columnar 103b3 and / or multiple stripe 103b4 feature structures can be arranged at any position in the second-level microstructure group 103b as needed.

[0073] It is understandable that, among the multiple columnar features included in the second-level microstructure group 103b, any two columnar features may have the same or different dimensions. Similarly, among the multiple strip-shaped features included in the second-level microstructure group 103b, any two strip-shaped features may have the same or different dimensions, and the extension directions of any two strip-shaped features may be the same or different.

[0074] Figure 4 This is a cross-sectional schematic diagram of the second-level microstructure group 103b and the first-level microstructure group 103a integrally formed in the thickness direction, as provided in the embodiments of this application.

[0075] In one possible implementation, the micron-scale array of columnar 103b1 and / or strip-shaped 103b2 features in the second-level micron structure group 103b can be at least partially integrally formed with the first-level micron structure group 103a, as shown in the schematic cross-sectional view in the thickness direction. Figure 4 As shown. The term "two components formed as one piece" means that during the formation of one of the two components, that component is connected to the other component without requiring further processing (such as bonding, welding, snap-fit ​​connections, or screw connections). In practice, this can be achieved by using an ultra-thin metal foil as a carrier and processing it integrally through techniques such as chemical etching. This reduces processing steps, saves costs, and allows for ultra-thin designs, thus meeting the needs of ultra-thin applications.

[0076] Figure 5 This is a cross-sectional schematic diagram of the second-level micron structure group 103b and the first structural layer 101 integrally formed in the thickness direction according to an embodiment of this application.

[0077] In another possible implementation, the micron-scale array of columnar 103b1 and / or strip-shaped 103b2 features in the second-level micron structure group 103b may also be at least partially integrally formed with the first structural layer 101, as shown in the cross-sectional schematic diagram in the thickness direction. Figure 5 As shown; this can improve the overall stiffness of the first structural layer 101, thereby meeting the requirements of load-bearing scenarios.

[0078] Figure 6-1 This is a cross-sectional schematic diagram of one embodiment of the second-level micron structure group 103b and the first-level micron structure group 103a provided in the present application in the thickness direction. Figure 6-2 This is a cross-sectional schematic diagram of another embodiment of the second-level micron structure group 103b and the first-level micron structure group 103a provided in the embodiments of this application in the thickness direction.

[0079] In one possible implementation, in the third structural layer 103, the thickness δ1 of the second-level microstructure group 103b is greater than or equal to the thickness δ2 of the first-level microstructure group 103a, as shown in the cross-sectional diagram in the thickness direction. Figure 6-1 and Figure 6-2 As shown. This allows the second-level microstructure group 103b to have sufficient liquid storage capacity and low liquid backflow resistance, while also facilitating rapid and effective evaporation of the liquid through the first-level microstructure group 103a, thereby ensuring better heat dissipation performance.

[0080] Figure 7 The first-level microstructure group 103a provided in the embodiments of this application includes a first region and a second region as a top view.

[0081] In another possible implementation, the first-level microstructure group 103a includes at least a first region and a second region; wherein the aperture and / or aperture spacing of the first region is different from that of the second region, as shown in the top view diagram. Figure 7As shown. The second-level micron structure group 103b includes at least a third region and a fourth region. Exemplarily, the first region may be located in the evaporation chamber of the thermal superconducting device 10, and the second region may be located in the condensation chamber of the thermal superconducting device 10. The third region may be located in the evaporation chamber of the thermal superconducting device 10, and the fourth region may be located in the condensation chamber of the thermal superconducting device 10. When the thermal superconducting device 10 is used for heat dissipation, the first and third regions are close to the heat source, while the second and fourth regions are far from the heat source. In the design, the aperture and / or spacing of the pores in the first region is less than or equal to the aperture and / or spacing of the pores in the second region. In this way, after the working fluid in liquid state evaporates, it can condense in the second region and then quickly flow back to the second-level microstructure group 103b in the fourth region through the larger micropores of the first-level microstructure group 103a in the second region. This is because, under the premise of ensuring sufficient capillary force, the larger the pores, the smaller the backflow resistance, thereby ensuring sufficient liquid volume backflow. At the same time, the smaller the aperture and spacing of the first-level microstructure group 103a in the first region, the larger its evaporation surface area and the higher the evaporation efficiency, thus removing more heat from the heat source region. In addition, the smaller the pores, the stronger the capillary force, which accelerates the flow of the working fluid in liquid state from the second region back to the first region.

[0082] Understandably, the area of ​​the first region can be less than or equal to the area of ​​the evaporation chamber of the thermal superconducting device 10. For example, the first-level micron structure group 103a may also include a fifth region at the evaporation chamber location. The aperture and / or aperture spacing of the fifth region may differ from that of the first region, and the aperture and / or aperture spacing of the fifth region may also be the same as or different from that of the second region. Similarly, the area of ​​the second region can be less than or equal to the area of ​​the condensation chamber of the thermal superconducting device 10. For example, the first-level micron structure group 103a may also include a sixth region at the condensation chamber location. The aperture and / or aperture spacing of the sixth region may differ from that of the second region, and the aperture and / or aperture spacing of the sixth region may also be the same as or different from that of the first region.

[0083] Figure 8-1 This is a top view of one embodiment of the micron-scale array columnar 103b1 and / or strip-shaped 103b2 feature structures included in the second-level micron structure group 103b provided in this application. Figure 8-2 This is a top view of another embodiment of the micron-scale array columnar 103b1 and / or strip-shaped 103b2 feature structures included in the second-level micron structure group 103b provided in the embodiments of this application.

[0084] In another possible implementation, such as Figure 8-1 and Figure 8-2As shown, the second-order micron structure group 103b includes at least a third region and a fourth region. The dimensions and / or spacing of the micron-scale array columnar 103b1 and / or stripar 103b2 feature structures in the third region differ from the dimensions and / or spacing of the micron-scale array columnar 103b1 and / or stripar 103b2 feature structures in the fourth region, as illustrated in the top view diagram. Figure 8-1 and Figure 8-2 As shown. Exemplarily, the third region can be located in the evaporation chamber of the thermal superconducting device 10, and the fourth region can be located in the condensation chamber of the thermal superconducting device 10. When the thermal superconducting device 10 is used for heat dissipation, the third region is the region close to the heat source, and the fourth region is the region far from the heat source. By design, the micron-scale array columnar 103b1 and / or stripar 103b2 characteristic structural dimensions and / or spacing of the second-level micron-scale array columnar 103b1 and / or stripar 103b2 characteristic structural dimensions of the second-level micron-scale array 103b1 and / or stripar 103b2 characteristic structural dimensions and / or spacing of the second-level micron-scale array 103b1 and / or stripar 103b2 characteristic structural dimensions of the fourth region are less than or equal to those of the second-level micron-scale array 103b1 and / or stripar 103b2 characteristic structural dimensions of the fourth region. This ensures that after the working fluid condenses in the second region, it flows back through the micropores of the first-level micron structure group 103a to the micron-scale array of columnar 103b1 and / or strip-shaped 103b2 features of the second-level micron structure group 103b. Due to the larger spacing in the fourth region, the resistance to the fluid flowing back from the second-level micron structure group 103b in the fourth region to the second-level micron structure group 103b in the third region is smaller, thus ensuring a faster return rate and volume. Furthermore, the larger size of the micron-scale array of columnar 103b1 and / or strip-shaped 103b2 features in the fourth region provides effective support for the first-level micron structure group 103a while ensuring lower flow resistance.

[0085] It is understandable that the arrangement of the third and fourth regions of the second-level microstructure group 103b can refer to the arrangement of the first and second regions of the first-level microstructure group 103a. The second-level microstructure group 103b may also include more micron-scale array columnar 103b1 and / or strip 103b2 feature structures at the evaporation chamber and condensation chamber positions, which will not be elaborated here.

[0086] In some embodiments, the first-level microstructure group includes a first region and a second region. The first region is located in the evaporation chamber of the thermal superconducting device 10, and the second region is located in the condensation chamber of the thermal superconducting device 10. The pore size and / or pore spacing of the first-level microstructure group 103a in the first region is less than or equal to the pore size and / or pore spacing of the first-level microstructure group 103a in the second region. The second-level microstructure group 103b includes a third region and a fourth region. The third region is located in the evaporation chamber of the thermal superconducting device 10, and the fourth region is located in the condensation chamber of the thermal superconducting device 10. The micron-scale array columnar 103b1 and / or strip-shaped 103b2 characteristic structure dimensions and / or spacing of the second-level microstructure group 103b in the third region are less than or equal to the micron-scale array columnar 103b1 and / or strip-shaped 103b2 characteristic structure dimensions and / or spacing of the second-level microstructure group 103b in the fourth region. Along the thickness direction of the thermal superconducting device 10, the first region and the third region are arranged opposite to each other; and / or, the second region and the fourth region are arranged opposite to each other.

[0087] It is understandable that, compared to the scheme in which the first and third regions are staggered along the thickness direction of the thermal superconducting device, in this embodiment the first and third regions are arranged opposite each other. The working fluid in the second-level micron structure group 103b in the third region can quickly pass through the micropores of the first-level micron structure group 103a in the first region to achieve efficient evaporation and heat dissipation.

[0088] Compared to the scheme where the second and fourth regions are staggered along the thickness direction of the thermal superconducting device 10, in this embodiment the second and fourth regions are arranged opposite each other. After the working fluid condenses in the second region, it can quickly flow back through the micropores of the first-level micron structure group 103a in the second region to the micron-scale array columnar 103b1 and / or strip-shaped 103b2 feature structures of the second-level micron structure group 103b in the fourth region.

[0089] Figure 9-1 This is a schematic diagram showing the correspondence between the third-level microstructure group 103c and the first structural layer 101, the second structural layer 102 and the first-level microstructure group 103a in one embodiment of this application. Figure 9-2 This is a schematic diagram showing the correspondence between the third-level microstructure group 103c provided in this application embodiment and the first structural layer 101, the second structural layer 102 and the first-level microstructure group 103a in another embodiment.

[0090] In one possible implementation, such as Figure 9-1 and Figure 9-2As shown, the third structural layer 103 further includes a third-level micron structure group 103c. The third-level micron structure group 103c is composed of at least one micron-scale porous structure 103c1 with a porosity greater than or equal to 5% and less than or equal to 50%. The porous structure 103c1 is at least disposed on one side of the first-level micron structure group 103a and the first structural layer 101 or the second structural layer 102, that is, the porous structure 103c1 is at least disposed between the first-level micron structure group 103a and the first structural layer 101. Its cross-sectional schematic diagram is shown below. Figure 9-2 As shown; and / or a porous structure 103c1 is at least disposed between the first-level microstructure group 103a and the second structural layer 102, and its cross-sectional schematic diagram is shown. Figure 9-1 As shown. In specific implementations, for example, the third-level micron structure group 103c can be a woven mesh (such as...). Figure 9-1 (as shown) or sintered powder particles (such as Figure 9-2 The structures shown (e.g., the first-level micron structure group 103a and / or the second-level micron structure group 103b) complement each other. For example, the third-level micron structure group 103c can be located in the evaporation chamber of the thermal superconducting device 10. When the thermal superconducting device 10 is used for heat dissipation, the third-level micron structure group 103c can be mainly arranged near the heat source region to further increase the liquid storage capacity at the heat source location, thereby supporting the heat dissipation requirements of higher power consumption scenarios.

[0091] Figure 10 This is a schematic diagram showing the parallel correspondence between the grain structure and thickness of the first-level micron structure group 103a and / or the second-level micron structure group 103b provided in the embodiments of this application. It is understood that... Figure 10 The image only shows some of the columnar or strip-shaped structures contained in the grain structure.

[0092] In another possible implementation, the grain structure of the first-level microstructure group 103a and / or the second-level microstructure group 103b includes at least columnar or strip-shaped structures. These columnar or strip-shaped structures are arranged parallel to the thickness direction of the first-level microstructure group 103a and / or the second-level microstructure group 103b, and their cross-sectional view in the thickness direction is shown below. Figure 10 As shown, this ensures good etching uniformity for the first-level micron structure group 103a and / or the second-level micron structure group 103b during the etching process, thereby guaranteeing superior performance. It should be noted that the parallelism described here is not absolute in a mathematical sense; it can be approximately parallel, allowing for slight deviations, with angles ranging from 0° to 10°.

[0093] Figure 11 This is a schematic diagram illustrating the vertical correspondence between the grain structure and thickness of the first-level micron structure group 103a and / or the second-level micron structure group 103b provided in the embodiments of this application. It is understood that... Figure 11 The image only shows some of the columnar or strip-shaped structures contained in the grain structure.

[0094] In another implementation, the grain structure of the first-level microstructure group 103a and / or the second-level microstructure group 103b includes at least columnar or strip-shaped structures. The columnar or strip-shaped structures may also be arranged perpendicular to the thickness direction of the first-level microstructure group 103a and / or the second-level microstructure group 103b, as shown in the cross-sectional view of the grain structure in the thickness direction. Figure 11 As shown, when the thickness of the first-level micron structure group 103a and / or the second-level micron structure group (103b) is very thin, such as less than or equal to 30 μm, the etching process is usually carried out in roll form. This ensures better tension and prevents the material from being torn or broken during processing, greatly improving the yield and mass production capability in ultra-thin processing scenarios. It should be noted that the verticality described here is not absolute parallelism in a mathematical sense, but can be approximately vertical, allowing for slight deviations, and the angle can be in the range of 80° to 100°.

[0095] Figure 12 The schematic relationship between the dimensions of the columnar 102a and / or strip 102b structures included in the second structural layer 102 provided in the embodiments of this application and the dimensions of the second-level microstructure group 103b.

[0096] In other possible implementations, the second structural layer 102 at least partially comprises columnar 102a and / or stripar 102b structures, the width or diameter d1 of which is greater than or equal to the spacing d2 of the micron-scale array columnar 103b1 and / or stripar 103b2 feature structures contained in the second-level micron structure group 103b, as shown in the cross-sectional schematic diagram in the thickness direction. Figure 12 As shown. In specific implementation, since the sealed cavity composed of the first structural layer 101 and the second structural layer 102 is under negative pressure, when the columnar 102a and / or strip 102b structures on the second structural layer 102 are larger than the spacing of the micron-scale array columnar 103b1 and / or strip 103b2 characteristic structures contained in the second-level micron structure group 103b, the collapse or puncture of the first-level micron structure group 103a can be effectively prevented, thereby avoiding the impact on performance.

[0097] For example, in some embodiments, the first structural layer 101 and the second structural layer 102 may be made of a single-layer metal material, such as including but not limited to copper, copper alloy, aluminum, aluminum alloy, steel, stainless steel, titanium, titanium alloy, aluminum-magnesium alloy, amorphous alloy, shape memory alloys (SMA), high entropy alloys (HEAs), or metal-ceramic composite materials (referring to composite materials formed by doping ceramic particles such as silicon carbide into a metal matrix, wherein the ceramic particles are used to improve the performance of the material, such as improving stiffness and strength), etc.

[0098] In some other embodiments, the first structural layer 101 and the second structural layer 102 may be made of composite materials. Composite materials refer to layered composite materials formed by calendering, electroplating, or other methods using one or more materials of a single metallic type and a single non-metallic type, such as composite materials of different metals, composite materials of metal and ceramics, composite materials of metal and polymer materials, etc.

[0099] The third structural layer 103 can be made of metals with excellent thermal conductivity, such as copper or aluminum, for example, C1020 oxygen-free copper. It can also be made of non-metallic materials with excellent thermal conductivity, such as diamond or ceramics, for example, diamond, alumina, or silicon oxide.

[0100] The following is based on Figure 12 Taking the thermal superconducting device 10 shown as an example, the fabrication method of the first structural layer 101, the second structural layer 102, and the third structural layer 103 will be illustrated. The fabrication method of the thermal superconducting device 10 includes the following steps:

[0101] Step 1: Form a first structural layer 101 and a second structural layer 102 by stamping or etching, and provide injection ports in the first structural layer 101 and the second structural layer 102. The first structural layer 101 and the second structural layer 102 are made of flexible composite material. For example, both the first structural layer 101 and the second structural layer 102 include a first copper layer, a polyimide layer and a second copper layer stacked sequentially, with thicknesses of 12 μm, 25 μm and 12 μm, respectively.

[0102] Step 2: First-level micron structure group 103a and second-level micron structure group 103b are integrally formed on the third structural layer 103 by chemical etching. For example, the third structural layer 103 can be made of C1020 oxygen-free copper with a thickness of 0.03 mm. The via diameter W2 of the first-level micron structure group 103a is 50 μm, and the hole center distance d3 is 80 μm. The via diameter W2 and hole center distance d3 can be referenced... Figure 4As shown; the column diameter or strip width of the micron-scale array columnar 103b1 and / or stripar 103b2 characteristic structures of the second-level micron structure group 103b is 200um, and the column center distance or groove center distance is 350um.

[0103] Step 3: After chemically cleaning the first structural layer 101 and the second structural layer 102, fix the third structural layer 103 to the first structural layer 101 by resistance spot welding.

[0104] Step 4: Diffusion connection is made between the edge region of the second structural layer 102 and the edge region of the second structural layer 102 that has been spot-welded and fixed in Step 3 to form a cavity, so as to enclose the third structural layer 103 in the cavity.

[0105] Step 5: Extract air from the cavity through the injection port. After creating a vacuum in the cavity, inject the working medium into the cavity through the injection tube. Then seal the injection port and remove the injection tube.

[0106] The thermal superconducting device 10 fabricated using the manufacturing method provided in the embodiments of this application has the following advantages:

[0107] (1) The first structural layer 101 and the second structural layer 102 are made of flexible composite material, which can achieve a significant weight reduction effect compared with metal material;

[0108] (2) The third structural layer 103 uses ultra-thin copper foil as a carrier and chemically etches to form the first-level micron structure group 103a and the second-level micron structure group 103b. It is thin and light, and can effectively control the contradiction between capillary force and permeability, thereby ensuring excellent thermal performance.

[0109] The fabrication method of the first structural layer 101, the second structural layer 102, and the third structural layer 103 will be illustrated below using the thermal superconducting device 10 shown in Figure 9 as an example. The fabrication method of the thermal superconducting device 10 includes the following steps:

[0110] Step 1: Form a second structural layer 102 by stamping process, including columnar 102a and / or strip 102b structures; for example, the material of the second structural layer 102 is 316L stainless steel, copper or copper alloy.

[0111] Step 2: The second-level micron structure group 103b is integrally processed on the surface of the first structural layer 101 facing the second structural layer 102 by chemical etching; for example, the material of the first structural layer 101 is 316L stainless steel, copper or copper alloy.

[0112] Step 3: Form a first-level micron structure group 103a on the surface of a metal foil using a chemical etching process; for example, the material of the first-level micron structure group 103a is 316L stainless steel, copper, or copper alloy.

[0113] Step 4: Form the third-level micron structure group 103c through a weaving process; for example, the material of the third-level micron structure group 103c can be 316L stainless steel, copper or copper alloy, and it is disposed between the first-level micron structure group 103a and the second structural layer 102.

[0114] Step 5: After chemically cleaning the first structural layer 101 and the second structural layer 102, fix the first-level micron structure group 103a and the third-level micron structure group 103c to the first structural layer 101 by resistance spot welding, and then sinter them together. Passivation treatment can be selected as needed.

[0115] Step 6: Connect the edge region of the second structural layer 102 with the edge region of the first structural layer 101 from Step 5 using laser welding or brazing to form a cavity, thereby enclosing the third structural layer 103 within the cavity.

[0116] Step 7: Extract air from the cavity through the injection port. After creating a vacuum in the cavity, inject the working medium into the cavity through the injection tube. Then seal the injection port and remove the injection tube.

[0117] The thermal superconducting device 10 fabricated using the manufacturing method provided in the embodiments of this application has the following advantages:

[0118] (1) The first structural layer 101 and the second structural layer 102 are made of metal, which has higher strength and can be used in load-bearing scenarios as load-bearing structural components;

[0119] (2) The third structural layer 103 is composed of a first-level micron structure group 103a, a second-level micron structure group 103b and a third-level micron structure group 103c. It can balance the contradiction between capillary force and permeability, and also increase the liquid storage capacity in the heat source area, thereby supporting the application in high power consumption scenarios and avoiding the risk of burning dry.

[0120] Figure 13 This is a schematic diagram of one embodiment of the electronic device 1000 provided in this application. Figure 14 yes Figure 13 A partially exploded view of one embodiment of the electronic device 1000 shown. Figure 15 yes Figure 13 The diagram shows a partial structural diagram of the electronic device 1000 on line AA in one embodiment.

[0121] Electronic device 1000 can be a mobile phone, tablet personal computer, laptop computer, personal digital assistant (PDA), camera, personal computer, laptop computer, in-vehicle equipment, video surveillance setup, wearable device, augmented reality (AR) glasses, AR headset, virtual reality (VR) glasses, or VR headset, etc. It is understood that electronic device 1000 can be any electronic device 1000 with heat dissipation requirements. Figure 1 The electronic device 1000 of the embodiment shown is illustrated using a mobile phone as an example.

[0122] For example, the electronic device 1000 may include a thermal superconducting device 10, a heating element, a housing 300, and a screen 400. The screen 400 is mounted on the housing 300. The housing 300 and the screen 400 together enclose a receiving space 1001 inside the electronic device 1000. Both the thermal superconducting device 10 and the heating element are mounted on the receiving space 1001 of the electronic device 1000. It should be noted that... Figure 1 , Figure 2 Figure 3 and the related figures below only schematically show some components included in the electronic device 1000. The actual shape, size, location, and structure of these components are not subject to change. Figure 1 , Figure 2 As defined in Figure 3 and the following figures. In other embodiments, when the electronic device 1000 is some other type of device, the electronic device 1000 may not include the screen 400 and / or the housing 300.

[0123] Screen 400 can be used to display images, videos, etc. The touch sensing function of screen 400 is used to sense user touch actions to achieve human-computer interaction. For example, screen 400 can be a liquid crystal display (LCD), an organic light-emitting diode (OLED) display, an active-matrix organic light-emitting diode (AMOLED) display, a flexible light-emitting diode (FLED) screen 400, a Mini-LED display, a Micro-LED display, a Micro-OLED display, a quantum dot light-emitting diode (QLED) display, etc. Screen 400 can be a flat screen or a curved screen. Screen 400 can also be a flexible screen.

[0124] The housing 300 can be used to protect internal components (e.g., heat-generating devices) of the electronic device 1000. Exemplarily, the housing 300 may include a mid-frame 310 and a rear cover 320. The rear cover 320 is fixedly connected to the mid-frame 310. Exemplarily, the rear cover 320 can be fixedly connected to the mid-frame 310 by adhesive. Alternatively, the rear cover 320 and the mid-frame 310 may be integrally formed, i.e., the rear cover 320 and the mid-frame 310 are a single, integral structure.

[0125] The screen 400 can be located on the side of the mid-frame 310 away from the back cover 320. In this case, the screen 400 and the back cover 320 are located on opposite sides of the mid-frame 310. The screen 400, mid-frame 310, and back cover 320 together enclose the receiving space 1001 of the electronic device 1000. Exemplarily, the mid-frame 310 divides the receiving space 1001 of the electronic device 1000 into a first space 1002 and a second space 1003. The mid-frame 310 and screen 400 enclose the first space 1002. The mid-frame 310 and back cover 320 enclose the second space 1003.

[0126] In some embodiments, the accommodating space 1001 of the electronic device 1000 may also house devices such as a camera module 800, a circuit board 500, a battery 700, a speaker, or a microphone. The circuit board 500 may be a flexible circuit board or a rigid circuit board. Chips 600, resistors, capacitors, and other power devices may be mounted on the circuit board 500. The circuit board 500, battery 700, speaker, or microphone may be mounted in the first space 1002 and the second space 1003 respectively, depending on actual needs.

[0127] For example, the heat-generating device can be a battery, chip 600, power amplifier, power management unit (PMU), or other devices that generate heat during operation. It is understood that any device that generates heat during the operation of the electronic device 1000 can be considered a heat-generating device. Furthermore, the electronic device 1000 can have one, two, or more heat-generating devices. When there are two or more heat-generating devices, some of these devices can be of the same type; for example, there can be two processing chips 600, or two memory chips 600.

[0128] When a heat-generating device operates, it generates heat. The temperature at the location of the heat-generating device in the electronic device 1000 is relatively high, leading to severe localized overheating. The thermal superconducting device 10 can be used to transfer the heat generated by the heat-generating device to other, cooler locations within the electronic device 1000. In some embodiments, after the thermal superconducting device 10 transfers heat to these cooler locations, the heat can be dissipated along the housing 300 and / or the screen 400 to the external space of the electronic device 1000. In other embodiments, the thermal superconducting device 10 may also be referred to as a vapor chamber (VC), a heat spreader, a heat-conducting plate, etc.

[0129] To enable the thermal superconducting device 10 to more quickly transfer heat from its location to other lower-temperature locations, the heating element should be positioned around the thermal superconducting device 10. Alternatively, when installing the thermal superconducting device 10, its evaporation chamber should be located near the heating element to facilitate heat absorption. For example, the heating element can be directly connected to the thermal superconducting device 10, or a thermally conductive structure can be provided between them to conduct the heat generated by the heating element to the thermal superconducting device 10. It is understood that the heating element can be located in either the first space 1002 or the second space 1003. When the electronic device 1000 includes multiple heating elements, some heating elements can be located in the first space 1002, and others in the second space 1003.

[0130] For example, the heat-generating device may include a chip 600 and a battery 700, with the chip 600 mounted on a circuit board 500. The chip 600, circuit board 500, and battery 700 may all be mounted in the second space 1003. The chip 600 is fixed to the side of the mid-frame 310 facing the rear cover 320. The battery 700 may be fixed to the side of the mid-frame 310 facing the rear cover 320 and spaced apart from the chip 600. The thermal superconducting device 10 may be mounted in the first space 1002. The thermal superconducting device 10 may be fixed to the side of the mid-frame 310 facing the screen 400. It is understood that the mid-frame 310 can serve as a heat-conducting structure. The heat generated by the chip 600 and battery 700 during operation can be conducted to the thermal superconducting device 10 through the mid-frame 310. The mid-frame 310 may also serve as a support for the thermal superconducting device 10.

[0131] Figure 16 This is a schematic diagram of another embodiment of the electronic device 1000 provided in this application. Figure 17 This is a schematic diagram of another embodiment of the electronic device 1000 provided in this application. Figure 18 This is a schematic diagram illustrating another embodiment of the electronic device 1000 provided in this application. It is understood that... Figures 16 to 18 The location of the thermal superconducting device 10 within the electronic device 1000 is roughly indicated by the dashed box.

[0132] Understandable Figures 13 to 16 The diagram illustrates the application of the thermal superconducting device 10 in a candybar phone. In other embodiments, such as... Figures 16 to 18 As shown, the thermal superconducting device 10 can also be applied to large foldable phones (such as...). Figure 16 As shown), small folding phones (such as...) Figure 17 (as shown) or a flat plate (such as) Figure 18 (As shown). When the thermal superconducting device 10 is applied to electronic devices 1000 that require folding, such as large or small folding phones, the thermal superconducting device 10 can be designed to be foldable to facilitate heat dissipation in folding scenarios.

[0133] It is understandable that the shape of the thermal superconducting device 10 can be designed according to the internal space of the electronic device 1000, and is not limited to... Figure 13 The regular rectangle shown in the image can also be... Figure 16 and Figure 17 The alien shown in the image.

[0134] For example, such as Figure 16 and Figure 17As shown, the housing 300 of the electronic device 1000 may include a first housing 301, a second housing 302, and a folding mechanism 303. The specific structural implementations of the first housing 301, the second housing 302, and the folding mechanism 303 are not shown in the figure; they are schematically distinguished from the first housing 301, the second housing 302, and the folding mechanism 303 by dashed lines. The folding mechanism 303 may be connected between the first housing 301 and the second housing 302, allowing the first housing 301 and the second housing 302 to be opened or closed. When the electronic device 1000 is a foldable electronic device, the thermal superconducting device 10 may be disposed within the first housing 301 or the second housing 302, and may also be partially disposed within the first housing 301 and partially pass through the folding mechanism 303 into the second housing 302.

[0135] For example, when the heating device includes a chip 600 and a battery 700, the chip 600 and the battery 700 can be installed inside the first housing 301. The evaporation chamber of the thermal superconducting device 10 can be located inside the first housing 301, close to the heating device, to facilitate heat absorption; the condensation chamber of the thermal superconducting device 10 can be located inside the second housing 302, away from the heating device, to facilitate heat dissipation.

[0136] It is understood that, without conflict, the embodiments and features in the embodiments of this application can be combined with each other, and any combination of features in different embodiments is also within the protection scope of this application. That is to say, the multiple embodiments described above can also be arbitrarily combined according to actual needs.

[0137] It is understood that all the above figures are exemplary illustrations of this application and do not represent the actual size of the product. Furthermore, the dimensional proportions between the components in the figures are not intended to limit the actual product of this application.

[0138] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A thermal superconducting device (10), characterized in that, It includes a first structural layer (101), a second structural layer (102), and a third structural layer (103); The third structural layer (103) includes a first-level microstructure group (103a), which is composed of micrometer-scale through holes. The thickness of the first-level microstructure group (103a) is ≤30um, and the aperture of the micrometer-scale through holes is ≥10um and ≤500um.

2. The thermal superconducting device (10) as described in claim 1, characterized in that, The third structural layer (103) further includes a second-level microstructure group (103b), which at least partially comprises micro-scale array columnar (103b1) and / or strip-shaped (103b2) feature structures; The second-level microstructure group (103b) is disposed between the first-level microstructure group (103a) and the first structural layer (101); The dimensions and spacing of the micron-scale array columnar (103b1) and / or strip-shaped (103b2) feature structures are both ≥10µm and ≤500µm.

3. The thermal superconducting device (10) as described in claim 2, characterized in that, The micron-scale array columnar (103b1) and / or strip-shaped (103b2) features contained in the second-level micron structure group (103b) are at least partially integrally formed with the first-level micron structure group (103a) or at least partially integrally formed with the first structural layer (101).

4. The thermal superconducting device (10) as described in claim 2 or 3, characterized in that, The second-level micron structure group (103b) further includes multiple columnar (103b3) and / or multiple strip-shaped (103b4) feature structures arranged in a non-uniform manner at the micron level, wherein the micron-level array columnar (103b1) and / or strip-shaped (103b2) feature structures and the multiple columnar (103b3) and / or strip-shaped (103b4) feature structures arranged in a non-uniform manner at the micron level are spaced apart; The dimensions and spacing of the multiple columnar (103b3) and / or strip-shaped (103b4) feature structures arranged in a non-uniform manner at the micrometer level are all ≥10um and ≤500um.

5. The thermal superconducting device (10) as described in claim 2 or 3, characterized in that, In the third structural layer (103), the thickness of the second-level microstructure group (103b) is greater than or equal to the thickness of the first-level microstructure group (103a).

6. The thermal superconducting device (10) as described in any one of claims 1 to 3, characterized in that, The first-order micron structure group (103a) includes a first region and a second region; The aperture and / or aperture spacing of the first region are set differently from those of the second region.

7. The thermal superconducting device (10) as described in any one of claims 1 to 3, characterized in that, The first-level micron structure group (103a) includes a first region and a second region, the first region being located in the evaporation cavity of the thermal superconducting device (10), and the second region being located in the condensation cavity of the thermal superconducting device (10). The aperture and / or pore spacing of the first-order micron structure group (103a) in the first region is less than or equal to the aperture and / or pore spacing of the first-order micron structure group (103a) in the second region.

8. The thermal superconducting device (10) as described in claim 2 or 3, characterized in that, The second-order microstructure group (103b) includes a third region and a fourth region; The dimensions and / or spacing of the micron-scale array columnar (103b1) and / or stripar (103b2) structures in the third region are different from those of the micron-scale array columnar (103b1) and / or stripar (103b2) structures in the fourth region.

9. The thermal superconducting device (10) as described in claim 2 or 3, characterized in that, The second-level micron structure group (103b) includes a third region and a fourth region, the third region being located in the evaporation cavity of the thermal superconducting device (10) and the fourth region being located in the condensation cavity of the thermal superconducting device (10); The size and / or spacing of the micron-scale array columnar (103b1) and / or strip-shaped (103b2) characteristic structures of the second-level micron structure group (103b) in the third region are ≤ the size and / or spacing of the micron-scale array columnar (103b1) and / or strip-shaped (103b2) characteristic structures of the second-level micron structure group (103b) in the fourth region.

10. The thermal superconducting device (10) as described in claim 2 or 3, characterized in that, The first-level micron structure group (103a) includes a first region and a second region. The first region is located in the condensation cavity of the thermal superconducting device (10), and the second region is located in the evaporation cavity of the thermal superconducting device (10). The pore size and / or pore spacing of the first-level micron structure group (103a) in the first region is less than or equal to the pore size and / or pore spacing of the first-level micron structure group (103a) in the second region. The second-level micron structure group (103b) includes a third region and a fourth region. The third region is located in the evaporation cavity of the thermal superconducting device (10), and the fourth region is located in the condensation cavity of the thermal superconducting device (10). The size and / or spacing of the micron-scale array columnar (103b1) and / or strip-shaped (103b2) characteristic structures of the second-level micron structure group (103b) in the third region are ≤ the size and / or spacing of the micron-scale array columnar (103b1) and / or strip-shaped (103b2) characteristic structures of the second-level micron structure group (103b) in the fourth region. Along the thickness direction of the thermal superconducting device (10), the first region and the third region are arranged opposite to each other; and / or, the second region and the fourth region are arranged opposite to each other.

11. The thermal superconducting device (10) as described in any one of claims 1 to 3, characterized in that, The third structural layer (103) further includes a third-level microstructure group (103c), which is composed of at least one micrometer-scale porous structure (103c1) with a porosity ≥5% and ≤50%. The porous structure (103c1) is at least disposed between the first-level microstructure group (103a) and the first structural layer (101), or at least disposed between the first-level microstructure group (103a) and the second structural layer (102).

12. The thermal superconducting device (10) as described in claim 11, characterized in that, The third-level microstructure group (103c) is located in the evaporation cavity of the thermal superconducting device (10).

13. The thermal superconducting device (10) as described in any one of claims 1 to 3, characterized in that, The grain structure of the first-level micron structure group (103a) includes columnar or strip-shaped structures, which are arranged parallel to or perpendicular to the thickness direction of the first-level micron structure group (103a).

14. The thermal superconducting device (10) as described in claim 2 or 3, characterized in that, The second structural layer (102) includes columnar (102a) and / or stripar (102b) structures, the width or diameter of which is greater than or equal to the spacing of the micron-scale array columnar (103b1) and / or stripar (103b2) feature structures of the second-level micron structure group (103b).

15. The thermal superconducting device (10) as described in claim 1, characterized in that, The first structural layer (101) and the second structural layer (102) form a vacuum cavity, and the third structural layer (103) is disposed in the vacuum cavity.

16. The thermal superconducting device (10) as described in claim 15, characterized in that, The thermal superconducting device (10) also includes a working fluid, which is stored in the vacuum cavity. When the thermal superconducting device (10) is used for heat dissipation, part of the working fluid is in a liquid state in the third structural layer (103), and part of it is in a gaseous state in the vacuum cavity. The vacuum cavity has an evaporation cavity and a condensation cavity. The third structural layer (103) extends from the evaporation cavity to the condensation cavity. When the thermal superconducting device (10) is used for heat dissipation, the evaporation cavity is close to the heat source, and the condensation cavity is far from the heat source. The working fluid absorbs heat in the evaporation cavity and changes from a liquid state to a gaseous state. The gaseous working fluid moves from the evaporation cavity to the condensation cavity. The working fluid releases heat in the condensation cavity and changes from a gaseous state to a liquid state. The liquid working fluid returns from the condensation cavity to the evaporation cavity through the third structural layer (103).

17. An electronic device (1000), characterized in that, It includes a heat-generating device and a thermal superconducting device (10) as described in claims 1 to 16, wherein the thermal superconducting device (10) is used to dissipate heat from the heat-generating device.

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