RF power distribution device and plasma apparatus using same

Abstract

An RF power distribution device useful for plasma equipment in a semiconductor process includes an RF voltage divider configured to receive an RF input power and to distribute it into two substantially equal RF output powers for supply to first and second RF power consuming devices. The device has an impedance matching module to ensure proper impedance matching at both RF outputs, minimizing signal reflection and power loss. The device also includes a current sensor for monitoring RF power in real time, and an imbalance detector equipped with a differential amplifier and a window comparator for detecting power differences. A delay timer ensures that any detected imbalance condition is continuously present before the corrective action is triggered. An alarm initiation circuit controlled by a MOSFET-driven relay may provide an external notification of a continuous imbalance condition. The RF power distribution device may be integrated into a plasma apparatus that includes a heating module to maintain an optimal etching temperature.

Description

Technical Field

[0001] This utility model relates to RF power distribution devices, particularly for use in plasma equipment and other types of RF power consumption devices in semiconductor manufacturing processes. Background Technology

[0002] In semiconductor manufacturing, plasma etching plays a crucial role in defining intricate patterns on semiconductor wafers. Plasma equipment typically requires precisely controlled RF power to ensure high-quality and uniform etching on the substrate. However, traditional RF power distribution solutions face several challenges, such as impedance mismatch, signal reflection, inefficient power division, and insufficient monitoring of power imbalances. These challenges can lead to energy losses, reduced efficiency, and inconsistent results during plasma etching, negatively impacting the yield and quality of semiconductor components.

[0003] Furthermore, the increasing complexity of semiconductor components demands higher precision and reliability in all aspects of the manufacturing process, including RF power distribution. Traditional power conversion and voltage division methods are bulky and inefficient, often requiring external components, which increases space requirements and complicates system design. In addition, insufficient detection and correction of power imbalances between plasma etching units can lead to uneven etching, affecting semiconductor component performance and increasing production costs.

[0004] Therefore, how to solve problems such as impedance mismatch, signal reflection, low power voltage division efficiency, and insufficient monitoring of power imbalance has become a key issue and focus in the field of plasma equipment. Utility Model Content

[0005] To address the aforementioned problems, this invention provides an RF power distribution device specifically designed for use in semiconductor vacuum plasma equipment processes. Furthermore, in one embodiment, the RF power distribution device is particularly designed for inductively coupled plasma (ICP) equipment. This RF power distribution device is configured to receive RF input power and distribute it into two substantially equal RF output powers to supply multiple RF power-consuming devices. The main objective of this invention is to improve power distribution efficiency, maintain impedance matching, provide real-time power monitoring, and ensure the stability and reliability of RF power transmission, thereby further achieving energy-saving and power-efficient effects.

[0006] This RF power distribution device includes an RF voltage divider containing an RF transformer to divide the incoming RF power into two balanced outputs. These outputs are then transmitted to their respective RF power-consuming devices, such as plasma devices, via two RF output terminals. Both RF power-consuming devices at the RF output terminals have impedance matching networks to minimize RF power reflection and power loss, thereby improving the efficiency of the overall power distribution process. If impedance mismatch occurs at the two ends of the RF power distribution device's output, resulting in an unbalanced output, a real-time power monitoring alarm can be issued. Monitoring the impedance matching network status can also improve the yield stability of the plasma process.

[0007] To maintain power balance and prevent operational problems, the RF power distribution device includes a first current sensor and a second current sensor, each connected to its respective RF output terminal. Each current sensor includes a current transformer for detecting the RF current at each output terminal and is equipped with a voltage conversion circuit to convert the detected current into a DC voltage signal. These DC signals are then fed into an imbalance detector for continuous monitoring.

[0008] The imbalance detector includes a differential amplifier that compares signals from two current sensors to detect deviations between the RF power outputs. If the detected imbalance exceeds a preset threshold, a window comparator generates an imbalance detection signal. The device also includes a delay timer to ensure that the imbalance is not caused by transient fluctuations; the device will only initiate corrective measures after the imbalance has persisted for a predetermined time.

[0009] This invention also includes a warning activation circuit that integrates a MOSFET-controlled relay, which activates upon detection of a persistent imbalance. The relay triggers a warning output interface, which can be connected to an external monitoring or warning system to notify operators of any power differences requiring attention. The warning output interface is configurable as a D-sub 9-pin connector for flexible integration into external monitoring systems.

[0010] Furthermore, the RF power distribution device can be integrated into a plasma device, which includes a first plasma unit and a second plasma unit configured to receive the distributed RF power. To further enhance the plasma process reaction, a heating module can be included and contacted with the plasma unit. The heating module provides controlled heating of the wafer to ensure uniform temperature distribution during the process, improving etching uniformity and product quality.

[0011] This RF power distribution device is versatile, not limited to plasma etching and thin film applications; it can also work in conjunction with other RF power-consuming devices, such as RF sputtering systems, RF heating modules, and various RF-driven industrial applications. By integrating RF voltage division, impedance matching, imbalance detection, and warning activation into a single compact unit, it provides a robust and reliable RF power management solution, improving operational efficiency and device safety.

[0012] In summary, this invention addresses the challenges of RF power distribution by providing a comprehensive solution that includes balanced power allocation, real-time monitoring, efficient impedance matching, and reliable imbalance detection. These features collectively ensure consistent and efficient RF power delivery, supporting the high precision and quality standards required for advanced semiconductor manufacturing and other RF-based processes. Attached Figure Description

[0013] Figure 1 The diagram shown is a circuit diagram of one embodiment of the RF power distribution device of this utility model.

[0014] Figure 2 The diagram shown is a circuit diagram of an RF power divider.

[0015] Figure 3 The diagram shown is a circuit diagram of the current sensing module.

[0016] Figure 4 The diagram shown is a partial circuit diagram of an unbalanced detector.

[0017] Figure 5 The diagram shown is another part of the circuit diagram for the unbalanced detector.

[0018] Figure 6 The drawing is shown as Figure 1 The operation flowchart of the RF power distribution device in the illustrated embodiment is shown.

[0019] Figure 7 The illustration shows one embodiment of the plasma device for semiconductor manufacturing according to the present invention. Detailed Implementation

[0020] This utility model discloses an RF power distribution device designed to evenly distribute RF power to multiple output paths while ensuring optimal impedance matching, reducing power loss, and preventing signal reflection. Furthermore, the RF power distribution device integrates current sensing and imbalance detection functions to continuously monitor the RF power level at each output. By using differential amplifiers, window comparators, and delay timers, the RF power distribution device effectively detects and corrects imbalances, ensuring stable power delivery to connected RF power-consuming devices.

[0021] This invention represents a significant advancement in RF power management technology, providing a reliable and efficient solution to the challenges of RF power distribution in plasma devices and other applications in semiconductor manufacturing. By integrating RF voltage division, impedance matching, real-time monitoring, and imbalance correction into a single system, this invention improves operational stability, enhances product quality, and reduces power loss, thereby meeting the high precision and efficiency standards required in advanced manufacturing processes. The following is a detailed description of this invention's RF power distribution device, accompanied by accompanying drawings.

[0022] Please refer to Figure 1 , Figure 1 The diagram shown is a circuit diagram of one embodiment of the RF power distribution device of this utility model. This RF power distribution device 100 aims to evenly distribute the input RF power, ensure accurate impedance matching, monitor the real-time current level at the RF output, and detect imbalances that may affect the performance of plasma devices. The RF power distribution device 100 is divided into several main parts, each with different components and functions, working together to achieve its overall function. Because... Figure 1 Due to limitations in the diagram, it is not possible to clearly show the detailed components of each part and their connections. Therefore, the following text will provide further details. Figure 1 Enlarged diagrams of different parts of the circuit are provided to make the explanation of this embodiment clearer. First, please refer to... Figure 1 and Figure 2 , Figure 2 The diagram shown is a circuit diagram of an RF power divider. The RF power divider 110 is located in... Figure 1The left side of the entire circuit is shown. Its main function is to divide the incoming RF input power into two equal parts while maintaining proper impedance matching to prevent signal reflection and loss. The main components of the RF power divider 110 include an RF input terminal 112, which is used to receive high-power RF input power. In this embodiment, the RF input power is, for example, 2000W, the input voltage is 316.2V, and the current is 6.325A. In addition, the main components of the RF power divider 110 also include multiple capacitors C1, C2 and an inductor L. In this embodiment, these capacitors C1, C2 and inductor L constitute an impedance matching module 114 to achieve impedance matching, ensuring that signal reflection is minimized and signal integrity is maintained during the voltage division process. The RF power divider 110 also includes an RF transformer 116, which is used to divide the incoming RF power into two equal outputs, which are output by a first RF output terminal 118 and a second RF output terminal 119. The first RF output terminal 118 and the second RF output terminal 119 are used to ensure that the divided RF power is transmitted to subsequent components, while maintaining a balanced output impedance of 50Ω in this embodiment to ensure the stable performance of downstream devices (such as plasma devices).

[0023] Next, please refer to the following: Figure 1 and Figure 3 , Figure 3 The diagram shown is a circuit diagram of a current sensing module. The current sensing module is located in... Figure 1The circuit shown is positioned slightly to the left of center, immediately following the RF voltage divider 110. In this embodiment, the current sensing module includes a first current sensor 120 and a second current sensor 120'. The first current sensor 120 and the second current sensor 120' are responsible for real-time monitoring of the current output from the first RF output terminal 118 and the second RF output terminal 119, respectively, to detect any imbalance. In this embodiment, the first current sensor 120 and the second current sensor 120' have essentially the same configuration. The main components of both the first current sensor 120 and the second current sensor 120' include a current transformer 122, such as a ferrite core current transformer, which is electrically connected to the first RF output terminal 118 and the second RF output terminal 119, respectively, for detecting the RF current. In this embodiment, for a 1000W RF power output from the first RF output terminal 118 and the second RF output terminal 119, the secondary side of the transformer generates a secondary current of 0.124A, which is proportional to the RF current at the first RF output terminal and the second RF output terminal. Furthermore, the secondary current is converted into a voltage of approximately 5.8V across resistor R1, which is then rectified by Schottky diode D1 to generate a stable 8V DC output. The DC voltage outputs of the first current sensor 120 and the second current sensor 120' are then transmitted to the imbalance detector 130 to compare the signals at the two outputs. Additionally, the first RF output 118 and the second RF output 119 are also connected via wiring to the first RF output 118' and the second RF output 119' to connect to an external RF power-consuming device (e.g., a plasma device).

[0024] Next, please refer to the following: Figure 1 and Figure 4 , Figure 4 The diagram shown is a partial circuit diagram of an unbalanced detector. The main components of the unbalanced detector 130 include a first bipolar multiplier 131 and a second bipolar multiplier 132. These bipolar multipliers 131 and 132 amplify the signal from the current sensor, adjusting the gain as needed to ensure the signal has sufficient strength for subsequent comparison. Additionally, the main components of the unbalanced detector include a differential amplifier 134. The signals amplified by the first and second bipolar multipliers 131 and 132 are fed into the differential amplifier to compare the two signals and identify any deviation between them. If the deviation exceeds a preset threshold (adjustable from 10W to 100W), a deviation signal is output.

[0025] In addition, the main components of the imbalance detector 130 include a window comparator 136, which receives the deviation signal and compares it with a defined threshold to determine whether the deviation represents a significant power imbalance. Furthermore, the main components of the imbalance detector also include a delay timer 138. If the deviation exceeds the threshold, the signal is passed through the delay timer 138. This delay timer 138 introduces a delay (adjustable from 0.5 to 5 seconds), allowing the imbalance detector 130 to distinguish between brief transient imbalances and persistent deviations. The imbalance detector 130 will only take corrective action if the deviation persists beyond this delay.

[0026] Next, please refer to the following: Figure 1 and Figure 5 , Figure 5 The diagram shown is another part of the circuit diagram of the imbalance detector. This additional part of the imbalance detector circuit is the warning activation circuit 140, which ensures that any persistent imbalance is correctly signaled for corrective action. In this part of the circuit, an N-channel MOSFET 142 acts as a switch to activate the relay 144. If the delay timer 138 determines that the imbalance persists, the MOSFET 142 will be activated to energize the relay 144. The relay 144 is responsible for sending a detected imbalance signal to an external monitoring system (not shown). When the relay 144 is energized, its contact state switches, which can trigger a warning or activate the control mechanism. Additionally, a flyback diode 146 protects the MOSFET 142 from potential damage caused by voltage spikes generated when the coil of the relay 144 is de-energized, ensuring reliable operation. Furthermore, a warning output interface 148 (e.g., a D-sub 9-pin connector) is electrically connected to an external monitoring system (not shown) to indicate the imbalance state. It provides normally open (NO) and normally closed (NC) contacts, allowing for flexible integration into external monitoring systems.

[0027] Please refer to Figure 6 , Figure 6 The drawing is shown as Figure 1The illustrated embodiment of the RF power distribution device is shown in the operation flowchart. First, as shown in step S110, RF power is input through RF input terminal 112 and divided into two equal parts by RF transformer 116, maintaining the impedance of each RF output power at 50Ω. Next, as shown in step S120, the current transformers 122 of the first current sensor 120 and the second current sensor 120' monitor the RF output power of the first RF output terminal 118 and the second RF output terminal 119. The current sensed by the current transformer is converted into a DC voltage through resistor R1 and Schottky diode D1, and then a deviation detection process is performed. Afterwards, as shown in step S130, the differential amplifier 130 compares the DC voltage from each current transformer 122. If the deviation between the two signals exceeds a default value, as shown in step S140, the signal is transmitted to window comparator 136. Window comparator 136 receives the deviation signal and compares it with a defined threshold, as shown in step S150, to determine whether the deviation represents a significant power imbalance. Additionally, as shown in step S160, the delay timer 138 introduces a delay to prevent false alarms caused by brief transients. Next, step S165 is executed. If the imbalance persists, as shown in step S170, MOSFET 142 will be activated, thereby energizing relay 144 to send a warning signal to the external monitoring system, which will then notify the relevant operators. Conversely, if the imbalance only lasts for a brief transient period, as shown in step S167, MOSFET 142 will not be activated, and the external monitoring system will not issue a warning.

[0028] In conclusion, Figure 1 The RF power distribution device shown is a comprehensive solution that ensures balanced RF power distribution between the first RF output terminal 118 and the second RF output terminal 119, detects potential imbalances, and provides a mechanism to notify external monitoring systems. This RF power distribution device 100 integrates circuitry such as a transformer, current sensor, window comparator, and delay timer, enabling it to accurately detect, filter, and react to imbalances, thereby ensuring reliable operation of the RF power consuming device.

[0029] Please refer to Figure 7 , Figure 7 The illustration depicts one embodiment of a plasma apparatus for semiconductor manufacturing according to the present invention. The plasma apparatus 10 includes an etching processing body 200 integrating a first plasma device 202 and a second plasma device 204. (The foregoing is as follows...) Figure 1 The RF power distribution device 100 shown is configured to provide a balanced RF power supply to the first plasma device 202 and the second plasma device 204 to ensure efficient and stable plasma etching operations.

[0030] The etching body 200 is designed to house the first plasma device 202 and the second plasma device 204, and to distribute RF power evenly between the two devices while maintaining appropriate impedance and power levels, as discussed above. The structure of the etching body 200 provides isolation to prevent RF interference between the first plasma device 202 and the second plasma device 204, thereby ensuring the accuracy of the etching process on the etched components (e.g., wafers or substrates).

[0031] like Figure 7 As shown, the etching processing body 200 includes a heating module 210 connected to the first plasma device 202 and the second plasma device 204. The heating module 210 is responsible for providing controlled heating during the plasma etching process to maintain optimal etching conditions. The heating module 210 includes heating elements 212 strategically placed within the etching processing body 200 to ensure that the heat provided by the heating elements 212 is uniformly distributed across the first plasma device 202 and the second plasma device 204, thereby ensuring the uniformity and accuracy of the etching process. Uneven temperature can lead to irregular etching rates, affecting the quality and consistency of etched features on the etched components.

[0032] In addition to the heating components, the heating module 210 is also equipped with a temperature sensor 214 for real-time temperature monitoring. The temperature sensor 214 is integrated into the plasma etching environment, closely monitoring thermal conditions to ensure the set temperature is maintained throughout the etching process. The temperature measured by the temperature sensor 214 is dynamically adjusted via feedback from the feedback control module 216 to achieve precise control of the temperature profile at different stages of the plasma etching operation.

[0033] This feedback control module 216 operates by continuously reading temperature data from the temperature sensor 214 and adjusting the output of the heating component 212 accordingly. If a deviation from the desired temperature is detected, the feedback control module 216 increases or decreases the heating power of the heating component 212 to restore the temperature to the optimal range. This prevents defects in the etched components caused by poor temperature control, such as substrate warping or inconsistent etching depth.

[0034] The integration of the heating module 210 with the first plasma device 202 and the second plasma device 204 ensures optimal thermal conditions for plasma reaction, improving the efficiency of the etching process. This reduces the likelihood of defects, increases the yield of semiconductor wafers, and ensures the repeatability of etched patterns. In summary, the heating module 210 provides the necessary thermal control to maintain high-quality etching performance and ensures that the etched components are processed under consistent and controlled conditions.

[0035] Furthermore, in one embodiment, the RF voltage divider 110 of the RF power distribution device 100 has a high-precision power distribution function. Specifically, the RF power distribution accuracy is maintained within approximately 5% of the full-scale power input. This high-precision power distribution is quite important for applications such as plasma etching in semiconductor manufacturing processes, ensuring the consistency and reliability of etching results.

[0036] In one embodiment, the RF power distribution device 100 includes clearly defined ports to facilitate integration with external RF systems and monitoring components. For example, the RF input 112 and RF outputs (i.e., the first RF outputs 118, 118' and the second RF outputs 119, 119') use industry-standard Type N connectors, compatible with common RF coaxial cables, RF generators, and matching networks. Furthermore, the RF power distribution device 100 is equipped with dedicated interface ports: one D-sub 9-pin male connector for system integration and communication with external control or monitoring systems; and another D-sub 9-pin female connector for connecting to the RF power monitoring unit. When integrated with the RF power monitoring unit, the RF power levels of each output can be measured in real time, providing real-time feedback and improving system reliability. In the above embodiment, the alarm output interface 148 can use a D-sub 9-pin male connector.

[0037] In one embodiment, to further enhance operational adaptability and reliability, the RF power distribution device 100 is equipped with an adjustable power imbalance alarm threshold detection mechanism, namely, an alarm activation circuit 140. The operator can set the alarm threshold between approximately 10W and 100W by adjusting a potentiometer, and it can be measured by the voltage between the "Alarm set" terminal and the common ground (COM) terminal, with the corresponding threshold voltage range being approximately 0.5 volts (10W imbalance) to 5.0 volts (100W imbalance). This precise and adjustable detection function can be finely adjusted according to specific programming requirements.

[0038] Furthermore, to avoid unnecessary alarms caused by brief RF power fluctuations, the RF power distribution device 100 integrates a delay timer 138, which can be set to a delay time between approximately 0.5 seconds and 5 seconds. This design ensures that temporary or minor fluctuations will not falsely trigger imbalance alarms, further improving the accuracy and reliability of power imbalance detection.

[0039] To provide comprehensive system diagnostics and enhance operational safety, this RF power distribution device 100 supports interlocking functionality, allowing for seamless integration with external safety or interlocking systems. During routine operation or testing, specific interlocking indicators (such as "cooling water interlock signal" and "cooling water interruption alarm") will be triggered when a signal line or power supply is disconnected, ensuring rapid and reliable detection of power imbalances or system anomalies.

[0040] During actual installation, the RF power distribution device 100 also has clear installation guidelines, which may be recorded in the memory of the RF power distribution device 100 or provided separately in the instruction manual to ensure optimal functionality. These installation guidelines include proper placement, grounding, and wiring procedures to reduce potential operational problems. The RF power distribution device 100 must be securely positioned and fixed, with the RF input terminal 112 directly connected to the RF generator, and each RF output terminal connected to its corresponding RF matching network. Special emphasis is placed on the importance of grounding; a dedicated grounding wire must be used to connect the device housing to the ground terminal of the equipment frame to ensure stable operation and minimize electromagnetic interference.

[0041] Through the detailed technical parameters, adjustment mechanisms, diagnostic functions, and installation guidelines described above, the robustness, reliability, and flexibility of the RF power distribution device in practice are greatly improved, ensuring its effectiveness in semiconductor manufacturing processes and other RF power applications.

[0042] In summary, the RF power distribution device described in this patent specification is designed to be both multifunctional and precise, ensuring effective RF power distribution while maintaining optimal impedance matching, real-time monitoring, and imbalance detection. This RF power distribution device is not limited to plasma etching applications; it can also work in conjunction with various RF power consuming devices in different industrial and research applications, such as RF sputtering systems, RF heating modules, and various RF-driven industrial applications.

[0043] This utility model, in terms of its purpose, means, and effects, demonstrates significant differences from known technologies, representing a major breakthrough. It must be noted that the above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this invention. Any person skilled in the art can make modifications and variations to the embodiments without departing from the technical principles and spirit of this utility model. The scope of protection of this utility model should be as described in the following patent application claims.

Claims

1. An RF power distribution device for use in plasma equipment during semiconductor manufacturing processes, characterized in that, The RF power distribution device includes: An RF voltage divider, comprising: An RF input terminal is configured to receive RF input power; An RF transformer is connected to the RF input terminal, and the RF transformer is configured to divide the RF input power into two substantially equal RF output powers; A first RF output terminal and a second RF output terminal are electrically connected to the RF transformer, respectively. The first RF output terminal and the second RF output terminal are configured to output the divided RF output power to a first RF power consumption device and a second RF power consumption device, respectively. An impedance matching module is configured to ensure proper impedance matching at both the first RF output and the second RF output. A first current sensor and a second current sensor are respectively connected to a first RF output terminal and a second RF output terminal. The first current sensor and the second current sensor are respectively configured to detect the RF current at the first RF output terminal and the second RF output terminal. Furthermore, each of the first current sensor and the second current sensor includes a voltage conversion circuit electrically connected to each current sensor. Each voltage conversion circuit includes a current transformer. The current transformer of the first current sensor and the second current sensor is configured to generate a secondary current proportional to the RF current flowing through the first RF output terminal and the second RF output terminal. The current transformer includes: A resistor is used to convert the detected RF current into a voltage; and A Schottky diode is used to rectify the converted voltage into a DC signal; An imbalance detector, comprising: A differential amplifier is configured to compare the output power from the first current sensor and the second current sensor to detect the deviation between the output power; A window comparator is configured to generate an imbalance detection signal when the deviation between the output power of the first current sensor and the second current sensor exceeds a preset threshold; and A delay timer is configured to receive an imbalance detection signal and start outputting only after the imbalance has lasted for a predetermined time.

2. The RF power distribution device as described in claim 1, characterized in that, The imbalance detector also includes: A warning activation circuit, electrically connected to the delay timer, the warning activation circuit comprising: One relay; A MOSFET is electrically connected between the delay timer and the relay, and the MOSFET is configured to control the activation of the relay; A freewheeling diode is used to protect the MOSFET during relay operation; and A warning output interface, electrically connected to the relay, is configured to generate a warning signal when the delay timer confirms an imbalance.

3. The RF power distribution device as described in claim 2, characterized in that, The warning output interface also includes a D-sub 9-pin connector for connection to an external monitoring system, which displays the power difference between the first RF output and the second RF output.

4. The RF power distribution device as described in claim 1, characterized in that, The impedance matching module further includes at least one capacitor and an inductor to prevent signal reflection and minimize power loss during RF power voltage division.

5. The RF power distribution device as claimed in claim 1, characterized in that, The current transformer of the first current sensor and the second current sensor is a ferrite core current transformer.

6. The RF power distribution device as claimed in claim 1, characterized in that, The differential amplifier circuit further includes a first bipolar multiplier and a second bipolar multiplier, which are respectively connected to a first current sensor and a second current sensor. Specifically, before the differential amplifier compares the output power from the first current sensor and the second current sensor, the first bipolar multiplier and the second bipolar multiplier are used to adjust the gain of the DC signals from the first current sensor and the second current sensor, respectively, before the comparison.

7. The RF power distribution device as claimed in claim 1, characterized in that, The window comparator is configured to determine whether the deviation between the RF output power output by the first RF output terminal and the second RF output terminal exceeds a threshold, which can be set from 10W to 100W.

8. The RF power distribution device as claimed in claim 1, characterized in that, The delay timer can be set to a delay time of 0.5 seconds to 5 seconds.

9. A plasma device for semiconductor manufacturing processes, characterized in that, The plasma device includes: An etching process body, including a first plasma device and a second plasma device; and An RF power distribution device as described in any one of claims 1 to 8, configured to receive an RF power, divide the RF power, and supply the divided RF output power to the first plasma device and the second plasma device.

10. The plasma device as described in claim 9, characterized in that, The etching process body also includes a heating module, which is connected to the plasma devices for heating processing.

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