Diamond film growth gas circuit structure

Abstract

The utility model discloses a diamond film growth gas circuit structure which comprises a diamond growth chamber, the diamond growth chamber is provided with a substrate, a cooling part is arranged below the substrate, and a hot wire assembly is arranged above the substrate. A first hydrogen branch pipe, a carbon-containing gas branch pipe and a second hydrogen branch pipe are arranged on the left side of the diamond growth chamber, all the branch pipes extend upwards and are connected with a gas premixing platform, and the top of the gas premixing platform is connected with a first mixing branch pipe, a second mixing branch pipe and a third mixing branch pipe. The mixing branch pipes extend upwards and are connected with a mixing header pipe, the tail end of the mixing header pipe is connected with the top of the diamond growth chamber, a pressure relief header pipe is further connected to the mixing header pipe, a pressure relief branch pipe is connected to the right side of the diamond growth chamber, and the tail end of the pressure relief branch pipe is connected with the pressure relief header pipe. According to the utility model, the problems in the prior art can be solved, and better economic value is created.

Description

Technical Field

[0001] This application relates to the field of diamond production technology, specifically to a gas path structure for diamond thin film growth. Background Technology

[0002] Diamond thin film growth apparatuses introduce a mixture of carbon-containing gases and hydrogen through a gas path structure. The mixture passes through a hot metal filament at 800-1100℃, where it decomposes into methyl and hydrogen atoms in the high-temperature field. The numerous methyl groups interact with the substrate surface at a suitable temperature, and the recombination reactions between the methyl groups generate hybrid hydrocarbon groups within the high-temperature field. These hydrocarbon groups deposit on the substrate surface, thus forming a diamond thin film. As can be seen from the above description, the gas path structure plays a crucial role in diamond thin film growth apparatuses. Currently, diamond thin film growth apparatuses suffer from the following problems: firstly, poor gas mixing affects diamond growth; secondly, in the event of power outages or other emergencies, hydrogen and carbon-containing gases remain in the pipelines and cannot be discharged in time, posing a safety hazard. Utility Model Content

[0003] To solve the above-mentioned technical problems, the inventor, based on his extensive experience in the field of diamond production technology, developed a gas path structure for diamond thin film growth.

[0004] To achieve the above objectives, this utility model provides the following technical solution: a gas path structure for diamond thin film growth, comprising a diamond growth chamber, a substrate disposed in the diamond growth chamber, a cooling section disposed below the substrate, a hot wire assembly disposed above the substrate, a first hydrogen branch pipe, a carbon-containing gas branch pipe, and a second hydrogen branch pipe disposed on the left side of the diamond growth chamber, the first hydrogen branch pipe, the carbon-containing gas branch pipe, and the second hydrogen branch pipe extending upward and connecting to a gas premixing platform, a first mixing branch pipe, a second mixing branch pipe, and a third mixing branch pipe connected to the top of the gas premixing platform, the first mixing branch pipe, the second mixing branch pipe, and the third mixing branch pipe extending upward and connecting to a mixing main pipe, the end of the mixing main pipe connecting to the top of the diamond growth chamber, a pressure relief main pipe also connected to the mixing main pipe, a pressure relief branch pipe connected to the top right side of the diamond growth chamber, the end of the pressure relief branch pipe connecting to the pressure relief main pipe, and a circulating fan installed on the right outer wall of the diamond growth chamber.

[0005] Furthermore, the carbon-containing gases include methane, ethane, and acetylene, while the doping gases include phosphine, nitrogen, hydrogen sulfide, and borane. The substrate is preferably made of molybdenum or silicon.

[0006] Furthermore, the hot wire assembly includes electrodes and a hot wire.

[0007] Furthermore, the circulating fan is connected to a circulating pipe, and the gas moves from bottom to top along the circulating pipe.

[0008] Furthermore, a doped gas branch pipe is connected to the left side of the gas premixing platform. A fourth self-control valve is installed on the doped gas branch pipe. A first distribution hole is opened on the pipe wall of the doped gas branch pipe inside the gas premixing platform. The first distribution holes are arranged alternately.

[0009] Furthermore, a first self-regulating valve is installed on the first hydrogen branch pipe, a second self-regulating valve is installed on the carbon-containing gas branch pipe, and a third self-regulating valve is installed on the second hydrogen branch pipe. Hollow spheres are connected to the ends of the first hydrogen branch pipe, the carbon-containing gas branch pipe, and the second hydrogen branch pipe, and second distribution holes are opened on the hollow spheres.

[0010] Furthermore, the bottom of the first, second, and third mixing branch pipes is provided with a guide groove, which is funnel-shaped. The guide groove can better guide the premixed gas into each mixing branch pipe.

[0011] Furthermore, the cooling unit is connected to an inlet pipe and an outlet pipe, with cooling water flowing in from the inlet pipe and flowing out from the outlet pipe.

[0012] Furthermore, a fifth automatic control valve is installed on the mixing main pipe, a sixth automatic control valve is installed on the pressure relief main pipe, and a seventh automatic control valve is installed on the pressure relief branch pipe.

[0013] It should be noted that the diamond film growth chamber in actual production also includes a vacuum negative pressure system, which is common knowledge in the field. However, this application mainly addresses the gas path structure problem, therefore, the vacuum negative pressure system is not described in the technical solution and accompanying drawings. This does not affect the understanding and application of this technical solution by those skilled in the art, nor does it make the technology of this application unclear.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. By setting up the first hydrogen branch pipe, the carbon-containing gas branch pipe, the second hydrogen branch pipe and the doped gas branch pipe, and placing the carbon-containing gas branch pipe in the middle of the first hydrogen branch pipe and the second hydrogen branch pipe, the present invention can achieve a better mixing effect in the gas premixing platform, which is beneficial to the growth of diamond films.

[0015] 2. By setting up a main pressure relief valve and a branch pressure relief valve, this utility model can promptly remove residual gas in pipelines and equipment in the event of emergencies such as power outages, ensuring the safety of the equipment itself. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of this utility model.

[0017] Figure 2 This is a schematic diagram of a gas premixing platform.

[0018] Figure 3 This is a schematic diagram of a branch pipe with doped gas.

[0019] Reference numerals: 1. Diamond growth chamber; 2. Substrate; 3. Cooling section; 4. Water inlet pipe; 5. Water outlet pipe; 6. Circulating fan; 7. Circulating pipe; 8. First hydrogen branch pipe; 9. First automatic control valve; 10. Carbon-containing gas branch pipe; 11. Second automatic control valve; 12. Second hydrogen branch pipe; 13. Third automatic control valve; 14. Doped gas branch pipe; 1401. First distribution hole; 15. Fourth automatic control valve; 16. Gas premixing platform; 17. First mixing branch pipe; 18. Second mixing branch pipe; 19. Third mixing branch pipe; 20. Mixing main pipe; 21. Fifth automatic control valve; 22. Pressure relief main pipe; 23. Sixth automatic control valve; 24. Pressure relief branch pipe; 25. Seventh automatic control valve; 26. Hollow sphere; 2601. Second distribution hole; 27. Guide channel; 28. Hot wire assembly. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0021] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0022] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0023] In the description of this application, it should be noted that the terms "upper," "lower," and "left" are used interchangeably.

[0024] The orientation or positional relationship indicated by terms such as "right" is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this application is in use. It is used solely for the convenience of describing this application and for simplification, and does not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation on this application. Furthermore, the terms "first," "second," "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0025] like Figures 1-3 As shown, a gas path structure for diamond thin film growth includes a diamond growth chamber 1, a substrate 2 disposed in the diamond growth chamber 1, a cooling section 3 disposed below the substrate 2, and a hot wire assembly 28 disposed above the substrate 2. A first hydrogen branch pipe 8, a carbon-containing gas branch pipe 10, and a second hydrogen branch pipe 12 are respectively disposed on the left side of the diamond growth chamber 1. The first hydrogen branch pipe 8, the carbon-containing gas branch pipe 10, and the second hydrogen branch pipe 12 extend upward and connect to a gas premixing platform 16. The top of the gas premixing platform 16 is connected to a first mixing... The first mixing branch pipe 17, the second mixing branch pipe 18, and the third mixing branch pipe 19 extend upward and connect to the mixing main pipe 20. The end of the mixing main pipe 20 is connected to the top of the diamond growth chamber 1. A pressure relief main pipe 22 is also connected to the mixing main pipe 20. A pressure relief branch pipe 24 is connected to the top right side of the diamond growth chamber 1. The end of the pressure relief branch pipe 24 is connected to the pressure relief main pipe 22. A circulating fan 6 is installed on the right outer wall of the diamond growth chamber 1.

[0026] In this embodiment, the carbon-containing gas includes methane, ethane, and acetylene, and the substrate is preferably made of molybdenum or silicon.

[0027] In this embodiment, the hot wire assembly includes electrodes and a hot wire, which may be made of tantalum wire, tungsten wire, or rhenium wire, etc.

[0028] In this embodiment, the circulating fan 6 is connected to a circulating pipe 7, and the gas moves from bottom to top along the circulating pipe 7.

[0029] In this embodiment, a doping gas branch pipe 14 is connected to the left side of the gas premixing platform 16. A fourth self-regulating valve 15 is installed on the doping gas branch pipe 14. The doping gas branch pipe 14 has first distribution holes 1401 on its pipe wall inside the gas premixing platform 16, and the first distribution holes 1401 are arranged alternately. The types of doping gases include phosphine, nitrogen, hydrogen sulfide, borane, etc.

[0030] In this embodiment, a first self-regulating valve 9 is installed on the first hydrogen branch pipe 8, a second self-regulating valve 11 is installed on the carbon-containing gas branch pipe 10, and a third self-regulating valve 13 is installed on the second hydrogen branch pipe 12. Hollow spheres 26 are connected to the ends of the first hydrogen branch pipe 8, the carbon-containing gas branch pipe 10, and the second hydrogen branch pipe 12. A second distribution hole 2601 is provided on the hollow spheres 26.

[0031] In this embodiment, the bottom of the first mixing branch pipe 17, the second mixing branch pipe 18, and the third mixing branch pipe 19 are all provided with guide grooves 27, which are funnel-shaped. The guide grooves 27 can better guide the premixed gas into each mixing branch pipe.

[0032] In this embodiment, the cooling unit 3 is connected to an inlet pipe 4 and an outlet pipe 5. Cooling water flows in from the inlet pipe 4 and flows out from the outlet pipe 5.

[0033] In this embodiment, a fifth automatic control valve 21 is installed on the mixing main pipe 20, a sixth automatic control valve 23 is installed on the pressure relief main pipe 22, and a seventh automatic control valve 25 is installed on the pressure relief branch pipe 24.

[0034] In practical use, this invention first opens the first self-control valve 9, the second self-control valve 11, and the third self-control valve 13 in sequence, introducing hydrogen and methane gas into the first hydrogen branch pipe 8, the carbon-containing gas branch pipe 10, and the second hydrogen branch pipe 12. The gases mix on the gas premixing platform 16. The arrangement of the first distribution hole 1401 and the second distribution hole 2601 allows for better mixing of the gases on the gas premixing platform 16. After mixing, the gases enter the first mixing branch pipe 17, the second mixing branch pipe 18, and the third mixing branch pipe 19 respectively under the action of the guide groove 27, and then enter the diamond growth chamber 1 through the mixing main pipe 20. At the same time, the circulating fan 6 is started, allowing the mixed gases to react fully in the diamond growth chamber 1, which is beneficial to the growth of the diamond film. During normal production, according to the growth of the diamond film, borane gas is introduced into the gas premixing platform 16 through the doping gas branch pipe 14 in a timely manner to improve the growth quality of the diamond film.

[0035] In the event of a power outage or other emergency, the sixth and seventh automatic control valves 23 and 25 can be opened promptly to release the gas inside the pipelines and equipment through the main pressure relief pipe 22, ensuring equipment safety. It should be noted that the released gas is high-temperature gas; personnel on site must take precautions to avoid burns.

[0036] It should be noted that the diamond growth chamber 1 in actual production also includes a vacuum negative pressure system, which is common knowledge in the field. However, this application mainly addresses the gas path structure problem, so the vacuum negative pressure system is not described in the technical solution and accompanying drawings. This does not affect the understanding and application of this technical solution by those skilled in the art, nor does it make the technology of this application unclear.

[0037] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A gas path structure for diamond thin film growth, characterized in that: The device includes a diamond growth chamber with a substrate. A cooling section is located below the substrate, and a hot wire assembly is located above the substrate. A first hydrogen branch pipe, a carbon-containing gas branch pipe, and a second hydrogen branch pipe are respectively located on the left side of the diamond growth chamber. These branch pipes extend upwards and connect to a gas premixing platform. A first mixing branch pipe, a second mixing branch pipe, and a third mixing branch pipe are connected to the top of the gas premixing platform. These branch pipes extend upwards and connect to a main mixing pipe. The end of the main mixing pipe connects to the top of the diamond growth chamber. A pressure relief main pipe is also connected to the main mixing pipe. A pressure relief branch pipe is connected to the top right side of the diamond growth chamber, and its end connects to the main pressure relief pipe. A circulating fan is installed on the right outer wall of the diamond growth chamber.

2. The gas path structure for diamond thin film growth according to claim 1, characterized in that: The circulating fan is connected to a circulating pipe, and the gas moves from bottom to top along the circulating pipe.

3. The gas path structure for diamond thin film growth according to claim 1, characterized in that: The gas premixing platform is connected to a doped gas branch pipe on its left side. A fourth self-control valve is installed on the doped gas branch pipe. The doped gas branch pipe has a first distribution hole on its pipe wall inside the gas premixing platform. The first distribution holes are arranged alternately.

4. The gas path structure for diamond thin film growth according to claim 1, characterized in that: A first self-regulating valve is installed on the first hydrogen branch pipe, a second self-regulating valve is installed on the carbon-containing gas branch pipe, and a third self-regulating valve is installed on the second hydrogen branch pipe. Hollow spheres are connected to the ends of the first hydrogen branch pipe, the carbon-containing gas branch pipe, and the second hydrogen branch pipe, and a second distribution hole is opened on the hollow spheres.

5. The gas path structure for diamond thin film growth according to claim 1, characterized in that: The bottom of the first, second, and third mixing branch pipes is provided with a guide groove, which is funnel-shaped.

6. The gas path structure for diamond thin film growth according to claim 1, characterized in that: The cooling unit is connected to an inlet pipe and an outlet pipe. Cooling water flows in from the inlet pipe and flows out from the outlet pipe.

7. The gas path structure for diamond thin film growth according to claim 1, characterized in that: A fifth automatic control valve is installed on the mixing main pipe, a sixth automatic control valve is installed on the pressure relief main pipe, and a seventh automatic control valve is installed on the pressure relief branch pipe.

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