Plasma etching apparatus having split quartz cover

Abstract

This utility model relates to a plasma etching apparatus with a detachable quartz cover. The apparatus includes a cylinder with a telescopic rod extending and retracting along its height. A lifting bracket is located at the end of the telescopic rod, and a lower electrode is fixedly mounted on the lifting bracket. The lower electrode is used to adsorb a wafer, and a quartz cover is located on top of the lower electrode. The quartz cover includes a detachable outer ring and an inner ring, and a focusing ring is located on top of the quartz cover, abutting against the quartz cover. In this utility model, the quartz cover includes a detachable outer ring and an inner ring, thus reducing the weight of the quartz cover during assembly, facilitating disassembly and assembly, and simplifying maintenance. Furthermore, when either the inner or outer ring of the quartz cover is damaged, it is not necessary to replace the entire quartz cover; only the damaged part needs to be replaced, significantly reducing operating costs.

Description

Technical Field

[0001] This utility model relates to the field of plasma processing technology, and more specifically, to a plasma etching device with a split quartz cover. Background Technology

[0002] In semiconductor manufacturing, plasma etching equipment is one of the key process devices. The quartz cover, as an important component of the etching equipment, primarily protects the electrostatic chucks inside the reaction chamber from corrosion by the etching gases, and also serves to limit the wafer's position.

[0003] Currently, the quartz cover of plasma etching equipment is a one-piece structure, which is inconvenient to install and disassemble. Furthermore, due to the brittle nature of the quartz cover, partial damage during use requires replacement of the entire cover, resulting in high operating costs. Utility Model Content

[0004] This invention provides a plasma etching device with a split quartz cover, which can overcome some or all the defects of the prior art.

[0005] According to the present invention, a split quartz cover includes a cylinder, the cylinder having a telescopic rod that extends and retracts along the height direction, a lifting bracket at the end of the telescopic rod, a lower electrode fixedly provided at the lifting bracket, the lower electrode being used to adsorb a wafer, a quartz cover being provided at the top of the lower electrode, the quartz cover including a detachably fitted outer ring and an inner ring, a focusing ring being provided at the top of the quartz cover, the focusing ring abutting against the quartz cover.

[0006] In a preferred embodiment of this utility model, a first mating groove is provided at one end of the outer ring near the lower electrode, and a plurality of first mating holes are provided in the first mating groove along the circumference. A positioning post is provided in the first mating hole, and a first boss is provided at one end of the lower electrode near the outer ring. The side wall of the first boss abuts against the positioning post.

[0007] In a preferred embodiment of this utility model, a second mating hole is formed through the center of the inner ring, and a second boss is formed on the top of the lower electrode. The second mating hole is used to mate with the second boss.

[0008] In a preferred embodiment of this invention, a second mating groove is formed at the end of the second mating hole furthest from the lower electrode. The second mating groove is used to conformally mate with the sidewall of the wafer, and the height of the second mating groove is 0.5-1mm.

[0009] In a preferred embodiment of this utility model, the lifting bracket is provided with a plurality of insulating studs along the circumference. The insulating studs are used to support the lower electrode. A plurality of third mating holes are formed at the lower electrode and a fourth mating hole is formed at the outer ring. The insulating studs pass through the third and fourth mating holes and abut against the focusing ring.

[0010] In a preferred embodiment of this utility model, the focusing ring forms a fifth mating hole corresponding to the insulating stud, and an insulating bolt is provided at the fifth mating hole for threaded engagement with the insulating stud.

[0011] In a preferred embodiment of this invention, a focusing channel is formed through the middle of the focusing ring, and the end of the focusing channel near the inner ring is connected to the second mating groove.

[0012] Beneficial effects:

[0013] In the plasma etching equipment with a split quartz cover provided in this embodiment of the utility model, the quartz cover includes a detachable outer ring and an inner ring, which reduces the weight of the quartz cover per assembly, facilitates disassembly and assembly, and makes maintenance easier. In addition, when the inner ring or outer ring of the quartz cover is damaged, it is not necessary to replace the entire quartz cover, but only the damaged part needs to be replaced, which further reduces the cost of use.

[0014] Furthermore, by using a detachable inner and outer ring, when different etching processes are required to etch the wafer, only the inner ring needs to be replaced, without replacing the entire quartz cover, which significantly reduces production costs. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of a plasma etching device with a split quartz cover in at least one embodiment of the present invention.

[0016] Figure 2 This is a cross-sectional structural schematic diagram of a plasma etching device with a split quartz cover in at least one embodiment of the present invention.

[0017] Figure 3 This is a schematic diagram of the inner ring cross-sectional structure in at least one embodiment of the present invention;

[0018] Figure 4 This is a top view of the inner ring structure in at least one embodiment of the present invention. Detailed Implementation

[0019] To clearly illustrate the technical solution of this utility model, the embodiments are described in full with reference to the accompanying drawings.

[0020] Seen in Figure 1-4 This embodiment provides a plasma etching device with a split quartz cover 5, which includes a cylinder 1. The cylinder 1 has a telescopic rod 11 that extends and retracts along the height direction. The end of the telescopic rod 11 is provided with a lifting bracket 2. The cylinder 1 is used to drive the lifting bracket 2 to rise and fall.

[0021] Furthermore, a lower electrode 3 is fixedly installed at the lifting bracket 2. The lower electrode 3 is used to adsorb the wafer 4. A quartz cover 5 is provided on the top of the lower electrode 3. The quartz cover 5 is made of semiconductor-grade high-purity quartz, which has the characteristics of high temperature resistance, corrosion resistance and good insulation, and can reduce the influence of impurities on the etching process.

[0022] The quartz cover 5 includes a detachable outer ring 51 and an inner ring 52, which reduces the weight of the quartz cover 5 when assembled, makes it easy to disassemble and assemble, and makes it easy to maintain. In addition, when the inner ring 52 or the outer ring 51 of the quartz cover 5 is damaged, it is not necessary to replace the entire quartz cover 5, only the damaged part needs to be replaced, which better reduces the cost of use.

[0023] It is worth noting that, by using the detachable inner ring 52 and outer ring 51, when different etching processes are required to etch the wafer 4, only the inner ring 52 needs to be replaced, without replacing the entire quartz cover 5, which effectively reduces production costs.

[0024] In addition, a focusing ring 6 is provided on the top of the quartz cover 5. The focusing ring 6 abuts against the quartz cover 5 and is used to fit with the quartz cover 5, thereby reducing the leakage of plasma during the etching process of the wafer 4 and ensuring the stability of the etching process.

[0025] Among them, a focusing channel 62 is formed through the middle of the focusing ring 6, and the end of the focusing channel 62 near the inner ring 52 is connected to the second mating groove 522.

[0026] In some embodiments, the outer ring 51 is provided with a first mating groove 511 near the lower electrode 3. The first mating groove 511 is provided with a plurality of first mating holes 512 along the circumferential direction. The first mating holes 512 are provided with positioning posts 513. The lower electrode 3 is provided with a first boss 31 near the outer ring 51. The sidewall of the first boss 31 abuts against the positioning post 513 to achieve positioning between the outer ring 51 and the first boss 31.

[0027] Furthermore, a second mating hole 521 is formed through the middle of the inner ring 52, and a second boss 32 is formed on the top of the lower electrode 3. The second mating hole 521 is used to mate with the second boss 32. A second mating groove 522 is formed at the end of the second mating hole 521 away from the lower electrode 3. The second mating groove 522 is used to conformally mate with the sidewall of the wafer 4. The height of the second mating groove 522 is 0.5-1mm.

[0028] The top of the second protrusion 32 is used to adsorb the wafer 4, and the second mating groove 522 of the inner ring 52 can limit the sidewall of the wafer 4, thereby ensuring the reliability of the wafer 4 adsorbed at the lower electrode 3, and thus reducing the risk of operation interruption caused by the back helium alarm.

[0029] In some embodiments, the lifting bracket 2 is provided with a plurality of insulating studs 7 along the circumference. The insulating studs 7 are used to support the lower electrode 3. A plurality of third mating holes 33 are formed at the lower electrode 3, and the third mating holes 33 are sleeved on the insulating studs 7.

[0030] Furthermore, multiple fourth mating holes 514 are formed at the outer ring 51 corresponding to the insulating stud 7. The insulating stud 7 passes through the third mating hole 33 and the fourth mating hole 514 and abuts against the focusing ring 6. The focusing ring 6 forms a fifth mating hole 61 corresponding to the insulating stud 7. An insulating bolt 8 is provided at the fifth mating hole 61. The insulating bolt 8 is used to thread with the insulating stud 7, thereby realizing the fixed fit between the focusing ring 6 and the outer ring 51.

[0031] It is worth noting that the accompanying drawings in this disclosure are not drawn to scale, and the specific dimensions and quantity of each structure can be determined according to actual needs. The drawings described in this disclosure are merely structural schematic diagrams.

[0032] It is readily understood that those skilled in the art can combine, split, or reorganize the embodiments provided in this application to obtain other embodiments, all of which do not exceed the protection scope of this application.

Claims

1. A plasma etching apparatus with a split-type quartz cover, characterized in that, The device includes a cylinder with a telescopic rod that extends and retracts along the height direction. A lifting bracket is provided at the end of the telescopic rod, and a lower electrode is fixedly provided at the lifting bracket. The lower electrode is used to adsorb the wafer. A quartz cover is provided on the top of the lower electrode. The quartz cover includes a detachable outer ring and an inner ring. A focusing ring is provided on the top of the quartz cover, and the focusing ring abuts against the quartz cover.

2. The plasma etching apparatus with a split quartz cover according to claim 1, characterized in that, The outer ring has a first mating groove near the lower electrode. The first mating groove has multiple first mating holes along the circumference. The first mating holes have positioning pins. The lower electrode has a corresponding first boss near the outer ring. The sidewall of the first boss abuts against the positioning pin.

3. The plasma etching apparatus with a split quartz cover according to claim 1, characterized in that, A second mating hole is formed through the center of the inner ring, and a second boss is formed on the top of the lower electrode. The second mating hole is used to mate with the second boss.

4. The plasma etching apparatus with a split quartz cover according to claim 3, characterized in that, The second mating hole forms a second mating groove at the end furthest from the lower electrode. The second mating groove is used to conform to the wafer sidewall. The height of the second mating groove is 0.5-1mm.

5. The plasma etching apparatus with a split quartz cover according to claim 1, characterized in that, The lifting bracket is provided with multiple insulating studs along the circumference. The insulating studs are used to support the lower electrode. Multiple third mating holes are formed at the lower electrode and a fourth mating hole is formed at the outer ring. The insulating studs pass through the third and fourth mating holes and abut against the focusing ring.

6. The plasma etching apparatus with a split quartz cover according to claim 5, characterized in that, The focusing ring forms a fifth mating hole corresponding to the insulating stud. An insulating bolt is provided at the fifth mating hole, which is used to engage with the threaded insulating stud.

7. The plasma etching apparatus with a split quartz cover according to claim 4, characterized in that, A focusing channel is formed through the middle of the focusing ring, and the end of the focusing channel near the inner ring is connected to the second mating groove.

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