A radio frequency module, a phase-locked loop circuit and an electronic device

Abstract

The present disclosure provides a radio frequency module, a phase-locked loop circuit and an electronic device, wherein the radio frequency module comprises: a substrate and a radio frequency chip arranged in a stack, the radio frequency chip comprising a voltage-controlled oscillator; a second inductor is arranged in the substrate; the voltage-controlled oscillator adjusts the frequency according to the second inductor. In the radio frequency module, the phase-locked loop circuit and the electronic device of the present disclosure, an ultra-wide tuning range and extremely low power consumption are achieved without increasing additional area, thereby greatly improving the performance of the voltage-controlled oscillator while saving costs.

Description

Technical Field

[0001] This disclosure relates to the field of voltage-controlled oscillator technology, and more particularly to a radio frequency module, a phase-locked loop circuit, and an electronic device. Background Technology

[0002] A voltage-controlled oscillator (VCO) is one of the core components in circuits such as phase-locked loops (PLLs). Its main function is to generate a variable-frequency output signal based on the input control voltage. The output frequency of a VCO is proportional to the input voltage, so the frequency of the output signal can be precisely controlled by adjusting the input voltage.

[0003] The on-chip inductor of silicon in traditional RF modules is used as the inductor of the voltage-controlled oscillator, and the performance of the voltage-controlled oscillator is improved by optimizing the inductor. However, due to the physical size limitations of the RF chip, this optimization cannot achieve much effect. Summary of the Invention

[0004] This disclosure aims to at least partially address one of the technical problems in the related art.

[0005] Therefore, the purpose of this disclosure is to provide a radio frequency module, a phase-locked loop circuit, and an electronic device.

[0006] To achieve the above objectives, the first aspect of this disclosure provides a radio frequency module, comprising: a substrate and a radio frequency chip arranged in layers, the radio frequency chip including a voltage-controlled oscillator; a second inductor disposed in the substrate; and the voltage-controlled oscillator adjusting its frequency according to the second inductor.

[0007] Optionally, the radio frequency chip includes an inductor layer of a voltage-controlled oscillator, the inductor layer being provided with a first inductor, and the voltage-controlled oscillator adjusting its frequency according to the first inductor and a second inductor.

[0008] Optionally, the first inductor and the second inductor are connected in parallel; and / or, the substrate includes at least one encapsulation metal layer, the second inductor is at least partially disposed in the encapsulation metal layer; and / or, the unit sheet resistance of the encapsulation metal layer is less than the unit sheet resistance of the inductor layer; and / or, the first inductor and the second inductor have different inductance values.

[0009] Optionally, the at least one encapsulation metal layer includes: a first metal layer, wherein the unit sheet resistance of the first metal layer is less than the unit sheet resistance of the inductor layer, and the first metal layer is provided with a first encapsulation inductor; wherein the first encapsulation inductor and the first inductor are connected in parallel, and the inductance value of the first encapsulation inductor is greater than the inductance value of the first inductor; the switching unit is used to turn on the path where the first inductor is located, or to turn on the path where the first encapsulation inductor is located.

[0010] Optionally, the projection of the first packaged inductor onto the inductor layer along the direction from the substrate to the RF chip is located outside the first inductor.

[0011] Optionally, the at least one packaged metal layer further includes: a second metal layer, the second metal layer being located on the side of the first metal layer away from the RF chip, and the sheet resistance of the second metal layer being less than the sheet resistance of the inductor layer, the second metal layer being provided with a second packaged inductor; wherein the second packaged inductor, the first packaged inductor, and the first inductor are connected in parallel, and the inductance value of the second packaged inductor is greater than the inductance value of the first packaged inductor; the switching unit is used to turn on at most one of the path where the first inductor is located, the path where the first packaged inductor is located, and the path where the second packaged inductor is located.

[0012] Optionally, the projection of the second packaged inductor onto the first metal layer along the direction from the substrate to the RF chip is located outside the first packaged inductor.

[0013] Optionally, the substrate further includes: a first dielectric plate disposed between the second metal layer and the first metal layer, and the first dielectric plate having at least one through-hole first metal via, the second metal layer and the first metal layer being connected through the first metal via.

[0014] Optionally, the at least one packaged metal layer further includes: a third metal layer, the third metal layer being located on the side of the second metal layer away from the RF chip, and the sheet resistance of the third metal layer being less than the sheet resistance of the inductor layer, the third metal layer being provided with a third packaged inductor; wherein the third packaged inductor, the second packaged inductor, the first packaged inductor, and the first inductor are connected in parallel, and the inductance value of the third packaged inductor is greater than the inductance value of the second packaged inductor; the switching unit is used to turn on at most one of the paths where the first inductor is located, the paths where the first packaged inductor is located, the paths where the second packaged inductor is located, and the paths where the third packaged inductor is located.

[0015] Optionally, the projection of the third packaged inductor onto the second metal layer along the direction from the substrate to the RF chip is located outside the second packaged inductor.

[0016] Optionally, the substrate further includes: a second dielectric plate disposed between the third metal layer and the second metal layer, and the second dielectric plate having at least one through-hole second metal via, the third metal layer and the second metal layer being connected through the second metal via; and / or, a third dielectric plate and a base plate, the third dielectric plate disposed between the base plate and the third metal layer, and the third dielectric plate having at least one through-hole third metal via, the base plate and the third metal layer being connected through the third metal via.

[0017] Optionally, the substrate further includes: a fourth metal layer, the fourth metal layer being located on the side of the first metal layer near the RF chip, and the sheet resistance of the fourth metal layer being greater than the sheet resistance of the inductor layer; and / or, the RF chip further includes: a fifth metal layer, the fifth metal layer being located on the side of the inductor layer near the substrate, and the sheet resistance of the fifth metal layer being greater than the sheet resistance of the inductor layer.

[0018] Optionally, the substrate further includes: a fourth dielectric substrate and / or a fifth dielectric substrate, wherein the fourth dielectric substrate is disposed between the fourth metal layer and the first metal layer, and the fourth dielectric substrate has at least one through-hole fourth metal via, the fourth metal layer and the first metal layer are connected through the fourth metal via; the fifth dielectric substrate is disposed between the fifth metal layer and the fourth metal layer, and the fifth dielectric substrate has at least one through-hole fifth metal via, the fifth metal layer and the fourth metal layer are connected through the fifth metal via; and / or, the RF chip further includes: a sixth dielectric substrate and / or a seventh dielectric substrate, wherein the sixth dielectric substrate is disposed between the inductor layer and the fifth metal layer, and the sixth dielectric substrate has at least one through-hole sixth metal via, the inductor layer and the fifth metal layer are connected through the sixth metal via; the seventh dielectric substrate is disposed between the device layer and the inductor layer, and the seventh dielectric substrate has at least one through-hole seventh metal via, the device layer and the inductor layer are connected through the seventh metal via.

[0019] Optionally, the switching unit includes: at least one first switch, the first switch and the first inductor are connected in series, and the first switch is used to selectively conduct the path where the first inductor is located; at least one second switch, the second switch and the second inductor are connected in series, and the second switch is used to selectively conduct the path where the second inductor is located; wherein the first switch and the second switch are not turned on at the same time.

[0020] Optionally, the first inductor and the second inductor are respectively arranged in a ring, and the ring has an opening to form the first terminal and the second terminal of the inductor.

[0021] A second aspect of this disclosure provides a phase-locked loop circuit, including: a radio frequency module as provided in the first aspect of this disclosure.

[0022] A third aspect of this disclosure provides an electronic device, including: a radio frequency module as provided in the first aspect of this disclosure.

[0023] The technical solution provided in this disclosure may include the following beneficial effects:

[0024] The stacked substrate and RF chip constitute the substrate-type packaged chip structure of the RF module. The voltage-controlled oscillator (VCO) can achieve a second frequency adjustment range by utilizing a second inductor arranged in the substrate, thereby enabling the VCO to achieve a wider frequency adjustment range. Furthermore, the second inductor arranged in the substrate package metal layer has a much better quality factor than the first inductor in the RF chip, so when the second inductor is used, the VCO can achieve very good low-power performance. At the same time, since the second inductor is formed in the substrate in the direction perpendicular to the RF chip, it does not occupy the horizontal area of ​​the RF chip. Therefore, an ultra-wide tuning range and extremely low power consumption can be achieved without increasing the area, thereby saving costs and significantly improving the performance of the VCO.

[0025] Additional aspects and advantages of this disclosure will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this disclosure. Attached Figure Description

[0026] The above and / or additional aspects and advantages of this disclosure will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, in which:

[0027] Figure 1 This is a cross-sectional schematic diagram of the metal portion in a radio frequency module according to an embodiment of this disclosure;

[0028] Figure 2 This is a cross-sectional schematic diagram of the metal portion in a radio frequency module according to an embodiment of this disclosure;

[0029] Figure 3 This is a circuit diagram of a radio frequency module according to an embodiment of the present disclosure;

[0030] Figure 4 This is a spatial layout diagram of the inductor in a radio frequency module according to an embodiment of this disclosure;

[0031] As shown in the figure: 1. Substrate;

[0032] 11. Encapsulation metal layer; 111. First metal layer; 112. Second metal layer; 113. Third metal layer; 114. Fourth metal layer;

[0033] 12. Second inductor; 121. First package inductor; 122. Second package inductor; 123. Third package inductor;

[0034] 13. First metal via; 14. Second metal via; 15. Third metal via; 16. Fourth metal via; 17. Fifth metal via; 18. Base plate;

[0035] 2. Radio frequency chip;

[0036] 21. Inductor layer; 22. First inductor; 23. Device layer;

[0037] 24. Switching unit; 241. First switch; 242. Second switch;

[0038] 25. Fifth metal layer, 26. Sixth metal via, 27. Seventh metal via. Detailed Implementation

[0039] Embodiments of this disclosure are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are used only to explain this disclosure, and should not be construed as limiting this disclosure. Rather, embodiments of this disclosure include all variations, modifications, and equivalents falling within the spirit and scope of the appended claims.

[0040] In ultra-low power communication systems, ultra-low power devices, which are typically battery-powered, require extremely long standby times. In these applications, the power consumption of the phase-locked loop (PLL) needs to be as low as 150µA, and the power consumption of the voltage-controlled oscillator (VCO) needs to be as low as 100µA to meet the requirements for a sufficiently long standby time.

[0041] However, in related technologies, the power consumption of voltage-controlled oscillators is mainly reduced by optimizing the quality factor of the inductor on the silicon substrate of the RF chip. However, this method is physically limited and can only optimize the power consumption to the level of 500uA. On the other hand, as the frequency range to be supported in communication is getting wider and wider, from tens of MHz to tens of GHz, related technologies achieve this by connecting multiple voltage-controlled oscillators with different frequency coverage ranges in series and by using methods such as reducing the inductor area to save the area of ​​the RF chip.

[0042] Using on-chip silicon inductors as the inductors in voltage-controlled oscillators (VCOs) and optimizing the inductor section can achieve a low-power, wide frequency tuning range. However, due to the physical limitations of the RF chip, this optimization cannot achieve significant results. Another method to increase the frequency tuning range is to use multiple VCOs with different frequency coverages, switching between them via switches to ensure the overall frequency coverage of the VCO group meets the requirements. However, this method requires more RF chip area, leading to a significant increase in the cost of the RF chip.

[0043] Due to physical limitations, the quality factor of on-chip inductors on silicon cannot be made very high, thus restricting the power consumption of voltage-controlled oscillators (VCOs) to the tens of µA range. Furthermore, because the frequency adjustment range of a single VCO is limited, a wide frequency adjustment range cannot be achieved without increasing area consumption by using multiple VCOs.

[0044] like Figure 1 As shown, this disclosure provides an embodiment of a radio frequency module, including: a substrate 1 and a radio frequency chip 2 arranged in layers. The radio frequency chip 2 includes a voltage-controlled oscillator. A second inductor 12 is disposed in the substrate 1. The second inductor 12 is at least partially disposed in the substrate 1. The voltage-controlled oscillator adjusts its frequency according to the second inductor 12.

[0045] In some embodiments of this disclosure, by providing the inductor (second inductor 12) used in the voltage-controlled oscillator in the substrate 1, the area of ​​the radio frequency chip can be miniaturized and the cost reduced.

[0046] In some embodiments of this disclosure, the radio frequency chip 2 includes an inductor layer 21 of a voltage-controlled oscillator, the inductor layer 21 being provided with a first inductor 22, and the voltage-controlled oscillator adjusting its frequency according to the first inductor 22 and the second inductor 12.

[0047] The substrate 1 includes at least one encapsulation metal layer 11, and the second inductor 12 is at least partially disposed on the encapsulation metal layer 11.

[0048] In some embodiments of this disclosure, a metal layer of the packaging substrate is used as the inductor, which can achieve a quality factor far exceeding that of chip-level inductors, thus resulting in very good low-power performance.

[0049] In some embodiments of this disclosure, the first inductor 22 and the second inductor 12 are interconnected. The voltage-controlled oscillator can adjust its frequency according to the first inductor 22 and / or the second inductor 12.

[0050] In one embodiment of this disclosure, the unit sheet resistance of the encapsulation metal layer 11 is less than the unit sheet resistance of the inductor layer 21.

[0051] In one embodiment of this disclosure, the first inductor 22 and the second inductor 12 are connected in parallel.

[0052] In one embodiment of this disclosure, the first inductor 22 and the second inductor 12 have different inductance values.

[0053] It is understandable that the stacked substrate 1 and RF chip 2 constitute the substrate-type packaged chip structure of the RF module. Since the first inductor 22 and the second inductor 12 are connected in parallel and have different inductance values, the voltage-controlled oscillator can use the first inductor 22 arranged in the inductor layer 21 of the RF chip 2 to achieve a first frequency adjustment range, and can also use the second inductor 12 arranged in the substrate 1 to achieve a second frequency adjustment range. Thus, the voltage-controlled oscillator can achieve a wider frequency adjustment range.

[0054] In the embodiments of this disclosure, since the smaller the unit sheet resistance, the smaller the quality factor of the inductor, and the smaller the power consumption of the corresponding voltage-controlled oscillator, it can be seen that the quality factor of the second inductor 12 arranged in the package metal layer 11 of the substrate 1 is much better than that of the first inductor 22 in the RF chip 2. Thus, when the second inductor 12 is put into use, the voltage-controlled oscillator can obtain very good low power consumption performance.

[0055] Meanwhile, since the second inductor 12 is formed in the substrate 1 in the direction perpendicular to the RF chip 2, it does not occupy the area in the horizontal direction of the RF chip 2. Thus, an ultra-wide tuning range and extremely low power consumption can be achieved by using multiple stacked inductors without increasing the area, thereby significantly improving the performance of the voltage-controlled oscillator while saving costs.

[0056] It should be noted that substrate 1 and RF chip 2 are used to form a voltage-controlled oscillator, which forms a substrate-type packaged chip structure.

[0057] The substrate 1 serves as the carrier for the radio frequency chip 2 and can be made of organic materials (such as FR-4) or ceramic materials. Conductive lines are arranged on the substrate 1 to connect the radio frequency chip 2 to external circuits. In this embodiment, the substrate 1 contains a second inductor 12 from a voltage-controlled oscillator.

[0058] The radio frequency chip 2 is the core part of the radio frequency module, which includes integrated circuits and functional circuits, such as: the first inductor 22 in the inductor layer 21 of the voltage-controlled oscillator, the switching unit 24 in the device layer 23, capacitors (which, together with the inductor in this embodiment, form an LC resonant circuit), MOSFETs, etc.

[0059] Specifically, the inductor layer 21 is used to arrange the first inductor 22 for use as a chip-level inductor. The specific type of the inductor layer 21 can be set according to actual needs and is not limited thereto. For example, the inductor layer 21 can be the top ultra-thick metal in the RF chip 2, and its material is copper. The design of this metal layer can realize the silicon substrate inductor (first inductor 22) that meets the performance requirements of the voltage-controlled oscillator.

[0060] The encapsulation metal layer 11 is used to arrange the second inductor 12 for use as an encapsulation-level inductor. The specific type of the encapsulation metal layer 11 can be set according to actual needs and is not limited thereto. For example, the encapsulation metal layer 11 can be a metal layer in the substrate 1 used for wiring conductivity.

[0061] The first inductor 22 and the second inductor 12 have different inductance values, and therefore correspond to different frequency ranges. Inductance value and frequency are inversely proportional. That is, if the inductance value of the first inductor 22 is greater than the inductance value of the second inductor 12, then the frequency range corresponding to the first inductor 22 is smaller than the frequency range corresponding to the second inductor 12. Conversely, if the inductance value of the first inductor 22 is less than the inductance value of the second inductor 12, then the frequency range corresponding to the first inductor 22 is greater than the frequency range corresponding to the second inductor 12.

[0062] Sheet resistance is an important electrical parameter in semiconductor and thin-film materials, used to describe the resistive characteristics of thin-film materials. It represents the resistance value of a square thin-film material between two opposite sides, regardless of the size of the square.

[0063] Apart from the ultra-thick metal top layer in RF chip 2, the metal thickness and unit sheet resistance of other silicon substrate inductors are difficult to meet the performance requirements of voltage-controlled oscillators. In traditional solutions, power consumption can only be reduced by optimizing the silicon substrate inductors, which is not very effective.

[0064] In this embodiment, the inductor is implemented through the packaging substrate 1. In the second inductor 12 mode, the power consumption of the voltage-controlled oscillator is reduced by more than 5 times compared with the voltage-controlled oscillator that uses the inductor in the RF chip 2 in the traditional way, and can reach an ultra-low level of tens of uA.

[0065] The solution in this embodiment is mainly applied in scenarios requiring low power consumption and an ultra-wide frequency adjustment range. It has a wide range of applications in low-power Bluetooth, low-power Wi-Fi, 5G RF transceivers, radar millimeter-wave transceivers, 5G baseband, satellite communication, and high-speed interface circuits with wide rate adjustment ranges.

[0066] like Figure 1As shown, in some embodiments, the RF chip 2 further includes a device layer 23 of a voltage-controlled oscillator, the device layer 23 being disposed on the side of the inductor layer 21 away from the substrate 1, and the device layer 23 being provided with a switching unit 24, the switching unit 24 being used to control the first inductor 22 and the second inductor 12.

[0067] It is understandable that when the switching unit 24 switches to the first inductor 22, the voltage-controlled oscillator can use the first inductor 22 arranged in the inductor layer 21 of the RF chip 2 to achieve a first frequency adjustment range. When the switching unit 24 switches to the second inductor 22, the voltage-controlled oscillator can use the second inductor 12 arranged in the substrate 1 to achieve a second frequency adjustment range. Thus, through the switching control of the switching unit 24, the voltage-controlled oscillator can achieve a wider frequency adjustment range.

[0068] It should be noted that the device layer 23 is used to arrange the switching unit 24, so as to control the first inductor 22 and the second inductor 12. Specifically, the switching unit 24 controls the path of the first inductor 22 to be turned on and controls the path of the second inductor 12 to be turned off, so that the voltage-controlled oscillator can realize chip-level inductance. Alternatively, the switching unit 24 controls the path of the second inductor 12 to be turned on and controls the path of the first inductor 22 to be turned off, so that the voltage-controlled oscillator can realize package-level inductance.

[0069] like Figure 2 , Figure 3 and Figure 4 As shown, in some embodiments, at least one encapsulation metal layer 11 includes: a first metal layer 111, the sheet resistance of the first metal layer 111 being less than the sheet resistance of the inductor layer 21, and the first metal layer 111 being provided with a first encapsulation inductor 121. The first encapsulation inductor 121 and the first inductor 22 are connected in parallel, and the inductance value of the first encapsulation inductor 121 is greater than the inductance value of the first inductor 22. The switching unit 24 is used to connect either the path containing the first inductor 22 or the path containing the first encapsulation inductor 121.

[0070] Understandably, since the unit sheet resistance of the first metal layer 111 is smaller than that of the inductor layer 21, the first packaged inductor 121 arranged on the first metal layer 111 has a higher quality factor than the first inductor 22 arranged on the inductor layer 21. Consequently, when the switching unit 24 switches to the first packaged inductor 121, the voltage-controlled oscillator has lower power consumption. At the same time, based on the first packaged inductor 121 formed by the stacked first metal layer 111 and the first inductor 22 formed by the inductor layer 21, and through the switching control of the switching unit 24, the voltage-controlled oscillator can achieve a wider frequency adjustment range in a smaller size.

[0071] Therefore, by utilizing the first inductor 22 stacked in the RF chip 2 and the first packaged inductor 121 arranged in the substrate 1, an ultra-wide tuning range can be achieved while also achieving extremely low power consumption, thereby significantly improving the performance of the voltage-controlled oscillator.

[0072] It should be noted that the first metal layer 111 is used to arrange the first package inductor 121 for use as a package-level inductor (second inductor 12). The specific type of the first metal layer 111 can be set according to actual needs and is not limited thereto. For example, the first metal layer 111 can be the first metal layer of the substrate 1, with a unit sheet resistance of 1.15mΩ / sq, wherein the unit sheet resistance of the inductor layer 21 is 5.83mΩ / sq.

[0073] like Figure 3 and Figure 4 As shown, in some embodiments, the projection of the first packaged inductor 121 onto the inductor layer 21 along the direction from the substrate 1 to the RF chip 2 is located outside the first inductor 22.

[0074] It is understandable that, since the projection of the first packaged inductor 121 on the inductor layer 21 along the direction from the substrate 1 to the RF chip 2 is located outside the first inductor 22, the first packaged inductor 121 can be arranged to have a larger size than the first inductor 22, thereby achieving a larger inductance value for the first packaged inductor 121 than for the first inductor 22. Consequently, when the switching unit 24 switches to the first packaged inductor 121, the voltage-controlled oscillator can achieve a lower frequency adjustment range, and when the switching unit 24 switches to the first inductor 22, the voltage-controlled oscillator can achieve a higher frequency adjustment range.

[0075] It should be noted that the projection of the first packaged inductor 121 onto the inductor layer 21 along the direction from the substrate 1 to the RF chip 2 can be arranged along the first inductor 22, and there is a uniform distance between it and the first inductor 22.

[0076] like Figure 2 , Figure 3 and Figure 4 As shown, in some embodiments, at least one packaged metal layer 11 further includes a second metal layer 112, which is located on the side of the first metal layer 111 away from the RF chip 2, and the sheet resistance of the second metal layer 112 is less than the sheet resistance of the inductor layer 21. The second metal layer 112 is provided with a second packaged inductor 122. The second packaged inductor 122, the first packaged inductor 121, and the first inductor 22 are connected in parallel, and the inductance value of the second packaged inductor 122 is greater than the inductance value of the first packaged inductor 121. The switching unit 24 is used to connect at most one of the following paths: the path containing the first inductor 22, the path containing the first packaged inductor 121, and the path containing the second packaged inductor 122.

[0077] Understandably, since the sheet resistance of the second metal layer 112 is smaller than that of the inductor layer 21, the second packaged inductor 122 arranged on the second metal layer 112 has a higher quality factor than the first inductor 22 arranged on the inductor layer 21. Consequently, when the switching unit 24 switches to the second packaged inductor 122, the voltage-controlled oscillator has lower power consumption. At the same time, based on the second packaged inductor 122 formed by the stacked second metal layer 112, the first packaged inductor 121 formed by the first metal layer 111, and the first inductor 22 formed by the inductor layer 21, and through the switching control of the switching unit 24, the voltage-controlled oscillator can achieve a wider frequency adjustment range in a smaller size.

[0078] Therefore, by utilizing the first inductor 22 stacked in the RF chip 2 and the second packaged inductor 122 arranged in the substrate 1, an ultra-wide tuning range can be achieved while also achieving extremely low power consumption, thereby significantly improving the performance of the voltage-controlled oscillator.

[0079] It should be noted that the second metal layer 112 is used to arrange the second package inductor 122 for use as a package-level inductor (second inductor 12). The specific type of the second metal layer 112 can be set according to actual needs and is not limited thereto. For example, the second metal layer 112 can be the second metal layer of the substrate 1, and its unit sheet resistance is 1.31mΩ / sq.

[0080] like Figure 3 and Figure 4 As shown, in some embodiments, the projection of the second packaged inductor 122 onto the first metal layer 111 along the direction from the substrate 1 to the RF chip 2 is located outside the first packaged inductor 121.

[0081] It is understandable that, since the projection of the second packaged inductor 122 along the direction from the substrate 1 to the RF chip 2 onto the first metal layer 111 is located outside the first packaged inductor 121, the second packaged inductor 122 can be arranged to have a larger size than the first packaged inductor 121. This results in the inductance value of the second packaged inductor 122 being greater than that of the first packaged inductor 121. Consequently, when the switching unit 24 switches to the second packaged inductor 122, the voltage-controlled oscillator can achieve a lower frequency adjustment range, and when the switching unit 24 switches to the first packaged inductor 121, the voltage-controlled oscillator can achieve a higher frequency adjustment range.

[0082] It should be noted that the projection of the second packaged inductor 122 along the direction from the substrate 1 to the RF chip 2 onto the first metal layer 111 can be arranged along the first packaged inductor 121, and there is a uniform distance between them.

[0083] like Figure 2As shown, in some embodiments, the substrate 1 further includes: a first dielectric plate (not shown in the figure), the first dielectric plate is disposed between the second metal layer 112 and the first metal layer 111, and the first dielectric plate is provided with at least one through first metal via 13, the second metal layer 112 and the first metal layer 111 are connected through the first metal via 13.

[0084] It is understandable that, since the first dielectric substrate is disposed between the second metal layer 112 and the first metal layer 111, the second metal layer 112 and the first metal layer 111 can be stacked using the first dielectric substrate. At the same time, since the first dielectric substrate is provided with at least one through-hole first metal via 13, and the second metal layer 112 and the first metal layer 111 are connected through the first metal via 13, the second metal layer 112 and the first metal layer 111 can be electrically connected using at least one first metal via 13, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0085] It should be noted that the first dielectric plate is used to support the second metal layer 112 and the first metal layer 111, and is also used to arrange the first metal via 13 connecting the second metal layer 112 and the first metal layer 111. The first dielectric plate and the first metal via 13 on the first dielectric plate can be set according to actual needs, and there are no restrictions on this.

[0086] like Figure 2 , Figure 3 and Figure 4 As shown, in some embodiments, at least one packaged metal layer 11 further includes a third metal layer 113, which is located on the side of the second metal layer 112 away from the RF chip 2, and the sheet resistance of the third metal layer 113 is less than the sheet resistance of the inductor layer 21. The third metal layer 113 is provided with a third packaged inductor 123. The third packaged inductor 123, the second packaged inductor 122, the first packaged inductor 121, and the first inductor 22 are connected in parallel, and the inductance value of the third packaged inductor 123 is greater than the inductance value of the second packaged inductor 122. The switching unit 24 is used to connect at most one of the following paths: the path containing the first inductor 22, the path containing the first packaged inductor 121, the path containing the second packaged inductor 122, and the path containing the third packaged inductor 123.

[0087] Understandably, since the sheet resistance of the third metal layer 113 is smaller than that of the inductor layer 21, the third packaged inductor 123 arranged on the third metal layer 113 has a higher quality factor than the first inductor 22 arranged on the inductor layer 21. Consequently, when the switching unit 24 switches to the third packaged inductor 123, the voltage-controlled oscillator has lower power consumption. At the same time, based on the third packaged inductor 123 formed by the stacked third metal layer 113, the second packaged inductor 122 formed by the second metal layer 112, the first packaged inductor 121 formed by the first metal layer 111, and the first inductor 22 formed by the inductor layer 21, and through the switching control of the switching unit 24, the voltage-controlled oscillator can achieve a wider frequency adjustment range in a smaller size.

[0088] Therefore, by utilizing the first inductor 22 stacked in the RF chip 2 and the third packaged inductor 123 arranged in the substrate 1, an ultra-wide tuning range can be achieved while also achieving extremely low power consumption, thereby significantly improving the performance of the voltage-controlled oscillator.

[0089] It should be noted that the third metal layer 113 is used to arrange the third package inductor 123 for use as a package-level inductor (second inductor 12). The specific type of the third metal layer 113 can be set according to actual needs and is not limited thereto. For example, the third metal layer 113 can be the top metal of the substrate 1, and its unit sheet resistance is 1.03mΩ / sq.

[0090] By combining the first metal layer 111, the second metal layer 112, and the third metal layer 113 in the substrate 1, and the inductor layer 21 of the RF chip 2, four high-quality factor inductors can be stacked in the vertical direction, with each inductor corresponding to a different frequency adjustment range, without occupying the horizontal area of ​​the RF chip 2. This allows the voltage-controlled oscillator to achieve ultra-low power consumption and an ultra-wide tuning range without adding extra area.

[0091] Specifically, the inductance values ​​of the first inductor 22, the first packaged inductor 121, the second packaged inductor 122, and the third packaged inductor 123 increase sequentially. When the switching unit 24 switches to the first inductor 22, the voltage-controlled oscillator (VCO) covers the highest frequency range. When the switching unit 24 switches to the third packaged inductor 123, the VCO covers the lowest frequency range. When the switching unit 24 switches to the first packaged inductor 121 and the second packaged inductor 122, the VCO covers the intermediate frequencies. Thus, the VCO completes the function of covering a very wide frequency adjustment range by switching the four inductors. Furthermore, when the switching unit 24 switches to the first packaged inductor 121, the second packaged inductor 122, and the third packaged inductor 123, because these inductors are made of the packaging metal of the substrate 1, their quality factors are extremely high. Therefore, the power consumption of the VCO is extremely low, even reaching the tens of µA level.

[0092] Figure 4 This is a 3D schematic diagram of each inductor in this embodiment. Viewed vertically, the inductors are arranged from smallest to largest as follows: first inductor 22, first packaged inductor 121, second packaged inductor 122, and third packaged inductor 123. The first inductor 22 is located inside the RF chip 2, while the first packaged inductor 121, second packaged inductor 122, and third packaged inductor 123 are located inside the substrate 1. Therefore, for the RF chip 2, the area occupied by the inductors is only a portion of that of the first inductor 22, which greatly reduces the production cost of the RF chip 2.

[0093] Based on the stacked arrangement of the second inductor 12 of the packaging metal layer 11, the first packaged inductor 121 of the first metal layer 111, the second packaged inductor 122 of the second metal layer 112, and the third packaged inductor 123 of the third metal layer 113, the RF chip 2 can expand the frequency adjustment range by more than 4 times while consuming the area of ​​one inductor (first inductor 22), and greatly save the production cost of the RF chip 2.

[0094] This embodiment implements the inductor based on the packaging substrate 1, which has a 5-fold benefit in terms of power consumption compared to the traditional method.

[0095] like Figure 3 and Figure 4 As shown, in some embodiments, the projection of the third packaged inductor 123 on the second metal layer 112 along the direction from the substrate 1 to the RF chip 2 is located outside the second packaged inductor 122.

[0096] It is understandable that, since the projection of the third packaged inductor 123 along the direction from the substrate 1 to the RF chip 2 onto the second metal layer 112 is located outside the second packaged inductor 122, the third packaged inductor 123 can be arranged to have a larger size than the second packaged inductor 122. This results in the inductance value of the third packaged inductor 123 being greater than that of the second packaged inductor 122. Consequently, when the switching unit 24 switches to the third packaged inductor 123, the voltage-controlled oscillator can achieve a lower frequency adjustment range, and when the switching unit 24 switches to the second packaged inductor 122, the voltage-controlled oscillator can achieve a higher frequency adjustment range.

[0097] It should be noted that the projection of the third packaged inductor 123 along the direction from the substrate 1 to the RF chip 2 onto the second metal layer 112 can be arranged along the second packaged inductor 122, and there is a uniform distance between the second packaged inductor 122.

[0098] like Figure 2 As shown, in some embodiments, the substrate 1 further includes a second dielectric plate (not shown in the figure), which is disposed between the third metal layer 113 and the second metal layer 112, and the second dielectric plate is provided with at least one through second metal via 14, and the third metal layer 113 and the second metal layer 112 are connected through the second metal via 14.

[0099] It is understandable that, since the second dielectric substrate is disposed between the third metal layer 113 and the second metal layer 112, the third metal layer 113 and the second metal layer 112 can be stacked using the second dielectric substrate. At the same time, since the second dielectric substrate is provided with at least one through second metal via 14, and the third metal layer 113 and the second metal layer 112 are connected through the second metal via 14, the third metal layer 113 and the second metal layer 112 can be electrically connected using at least one second metal via 14, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0100] It should be noted that the second dielectric plate is used to support the third metal layer 113 and the second metal layer 112, and is also used to arrange the second metal via 14 connecting the third metal layer 113 and the second metal layer 112. The second dielectric plate and the second metal via 14 on the second dielectric plate can be set according to actual needs, and there are no restrictions on this.

[0101] like Figure 2 As shown, in some embodiments, the substrate 1 further includes a third dielectric plate (not shown) and a base plate 18. The third dielectric plate is disposed between the base plate 18 and the third metal layer 113, and the third dielectric plate is provided with at least one through third metal via 15. The base plate 18 and the third metal layer 113 are connected through the third metal via 15.

[0102] It is understandable that, since the third dielectric plate is disposed between the base plate 18 and the third metal layer 113, the base plate 18 and the third metal layer 113 can be stacked using the third dielectric plate. At the same time, since the third dielectric plate is provided with at least one through third metal via 15, and the base plate 18 and the third metal layer 113 are connected through the third metal via 15, the base plate 18 and the third metal layer 113 can be electrically connected using at least one third metal via 15, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0103] It should be noted that the third dielectric plate is used to support the base plate 18 and the third metal layer 113, and is also used to arrange the third metal via 15 connecting the base plate 18 and the third metal layer 113. The third dielectric plate and the third metal via 15 on the third dielectric plate can be set according to actual needs, and there are no restrictions on this.

[0104] The base plate 18 serves as the bottom circuit board of the substrate 1, used to arrange circuit wires and support various metal layers and dielectric boards.

[0105] like Figure 2 As shown, in some embodiments, the substrate 1 further includes a fourth metal layer 114, which is located on the side of the first metal layer 111 close to the radio frequency chip 2, and the sheet resistance of the fourth metal layer 114 is greater than the sheet resistance of the inductor layer 21.

[0106] It is understandable that since the fourth metal layer 114 is located on the side of the first metal layer 111 close to the RF chip 2, the fourth metal layer 114 plays the role of packaging and wiring in the substrate 1. However, since the unit sheet resistance of the fourth metal layer 114 is greater than the unit sheet resistance of the inductor layer 21, the fourth metal layer 114 does not have an inductor arrangement to avoid generating large power consumption.

[0107] It should be noted that the fourth metal layer 114 is used for wiring in the substrate 1, etc. The specific type of the fourth metal layer 114 can be set according to actual needs and is not limited thereto. For example, the fourth metal layer 114 is a connection layer in the substrate 1 that connects to the radio frequency chip 2, and the material is nickel metal.

[0108] like Figure 2 As shown, in some embodiments, the radio frequency chip 2 further includes a fifth metal layer 25, which is located on the side of the inductor layer 21 close to the substrate 1, and the unit sheet resistance of the fifth metal layer 25 is greater than the unit sheet resistance of the inductor layer 21.

[0109] It is understandable that since the fifth metal layer 25 is located on the side of the inductor layer 21 close to the substrate 1, the fifth metal layer 25 plays the role of wiring and conducting in the RF chip 2. However, since the unit sheet resistance of the fifth metal layer 25 is greater than the unit sheet resistance of the inductor layer 21, the fifth metal layer 25 is not arranged as an inductor to avoid generating large power consumption.

[0110] It should be noted that the fifth metal layer 25 is used for wiring in the RF chip 2. The specific type of the fifth metal layer 25 can be set according to actual needs and there is no restriction. For example, the fifth metal layer 25 is the top metal layer connected to the substrate 1 in the RF chip 2, and the material is aluminum.

[0111] like Figure 2 As shown, in some embodiments, the substrate 1 further includes a fourth dielectric plate (not shown in the figure), which is disposed between the fourth metal layer 114 and the first metal layer 111, and the fourth dielectric plate is provided with at least one through fourth metal via 16, and the fourth metal layer 114 and the first metal layer 111 are connected through the fourth metal via 16.

[0112] It is understandable that, since the fourth dielectric substrate is disposed between the fourth metal layer 114 and the first metal layer 111, the fourth metal layer 114 and the first metal layer 111 can be stacked using the fourth dielectric substrate. At the same time, since the fourth dielectric substrate is provided with at least one through fourth metal via 16, and the fourth metal layer 114 and the first metal layer 111 are connected through the fourth metal via 16, the fourth metal layer 114 and the first metal layer 111 can be electrically connected using at least one fourth metal via 16, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0113] It should be noted that the fourth dielectric plate is used to support the fourth metal layer 114 and the first metal layer 111, and is also used to arrange the fourth metal via 16 connecting the fourth metal layer 114 and the first metal layer 111. The fourth dielectric plate and the fourth metal via 16 on the fourth dielectric plate can be set according to actual needs, and there are no restrictions on this.

[0114] like Figure 2 As shown, in some embodiments, the substrate 1 further includes a fifth dielectric plate (not shown in the figure), which is disposed between the fifth metal layer 25 and the fourth metal layer 114, and the fifth dielectric plate is provided with at least one through fifth metal via 17, and the fifth metal layer 25 and the fourth metal layer 114 are connected through the fifth metal via 17.

[0115] It is understandable that, since the fifth dielectric substrate is disposed between the fifth metal layer 25 and the fourth metal layer 114, the fifth metal layer 25 and the fourth metal layer 114 can be stacked using the fifth dielectric substrate. At the same time, since the fifth dielectric substrate is provided with at least one through fifth metal via 17, and the fifth metal layer 25 and the fourth metal layer 114 are connected through the fifth metal via 17, the fifth metal layer 25 and the fourth metal layer 114 can be electrically connected using at least one fifth metal via 17, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0116] It should be noted that the fifth dielectric plate is used to support the fifth metal layer 25 and the fourth metal layer 114, and is also used to arrange the fifth metal via 17 connecting the fifth metal layer 25 and the fourth metal layer 114. The fifth dielectric plate and the fifth metal via 17 on the fifth dielectric plate can be set according to actual needs, and there are no restrictions on this.

[0117] like Figure 2 As shown, in some embodiments, the RF chip 2 further includes a sixth dielectric substrate (not shown in the figure), which is disposed between the inductor layer 21 and the fifth metal layer 25, and has at least one through-hole sixth metal via 26. The inductor layer 21 and the fifth metal layer 25 are connected through the sixth metal via 26.

[0118] It is understandable that, since the sixth dielectric substrate is disposed between the inductor layer 21 and the fifth metal layer 25, the inductor layer 21 and the fifth metal layer 25 can be stacked using the sixth dielectric substrate. At the same time, since the sixth dielectric substrate is provided with at least one through-hole sixth metal via 26, and the inductor layer 21 and the fifth metal layer 25 are connected through the sixth metal via 26, the inductor layer 21 and the fifth metal layer 25 can be electrically connected using at least one sixth metal via 26, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0119] It should be noted that the sixth dielectric substrate is used to support the inductor layer 21 and the fifth metal layer 25, and is also used to arrange the sixth metal via 26 connecting the inductor layer 21 and the fifth metal layer 25. The sixth dielectric substrate and the sixth metal via 26 on the sixth dielectric substrate can be set according to actual needs, and there are no restrictions on this.

[0120] like Figure 2 As shown, in some embodiments, the RF chip 2 further includes a seventh dielectric substrate (not shown in the figure), which is disposed between the device layer 23 and the inductor layer 21, and has at least one through-hole seventh metal via 27, through which the device layer 23 and the inductor layer 21 are connected.

[0121] It is understandable that, since the seventh dielectric substrate is disposed between the device layer 23 and the inductor layer 21, the device layer 23 and the inductor layer 21 can be stacked using the seventh dielectric substrate. At the same time, since the seventh dielectric substrate is provided with at least one through-hole seventh metal via 27, and the device layer 23 and the inductor layer 21 are connected through the seventh metal via 27, the device layer 23 and the inductor layer 21 can be electrically connected using at least one seventh metal via 27, thereby stably realizing the circuit function of the voltage-controlled oscillator.

[0122] It should be noted that the seventh dielectric substrate is used to support the device layer 23 and the inductor layer 21, and is also used to arrange the seventh metal via 27 connecting the device layer 23 and the inductor layer 21. The seventh dielectric substrate and the seventh metal via 27 on the seventh dielectric substrate can be set according to actual needs, and there are no restrictions on this.

[0123] like Figure 3 and Figure 4 As shown, in some embodiments, the first inductor 22 and the second inductor 12 are respectively arranged in a ring, and the ring has an opening to form the first terminal and the second terminal of the inductor.

[0124] It is understandable that since the first inductor 22 and the second inductor 12 are respectively arranged in a ring, the first inductor 22 and the second inductor 12 have lower magnetic field losses, and thus have a higher quality factor, thereby effectively reducing the power consumption of the voltage-controlled oscillator.

[0125] It should be noted that the closer the first inductor 22 and the second inductor 12 are to a circle, the lower the magnetic field loss, the higher the quality factor, and the lower the noise power consumption.

[0126] The specific shapes of the first inductor 22 and the second inductor 12 can be set according to actual needs and are not limited thereto. For example, the first inductor 22 and the second inductor 12 can be structures that are close to octagons, and one side of the octagon serves as an opening to form a first terminal and a second terminal for wiring.

[0127] Among them, the first packaged inductor 121, the second packaged inductor 122 and the third packaged inductor 123, which are the second inductor 12, can be four inductors with similar shapes and successively increasing sizes, in conjunction with the first inductor 22.

[0128] like Figure 3As shown, in some embodiments, the switching unit 24 includes at least one first switch 241 and at least one second switch 242. The first switch 241 is connected in series with the first inductor 22, and the first switch 241 is used to selectively conduct the path containing the first inductor 22. The second switch 242 is connected in series with the second inductor 22, and the second switch 242 is used to selectively conduct the path containing the second inductor 12. The first switch 241 and the second switch 242 are not simultaneously activated.

[0129] It is understandable that, since the first switch 241 and the first inductor 22 are connected in series, the first switch 241 can selectively conduct the path where the first inductor 22 is located. Furthermore, since the second switch 242 and the second inductor 12 are connected in series, the second switch 242 can selectively conduct the path where the second inductor 12 is located.

[0130] Specifically, when the first switch 241 is turned on and the second switch 242 is turned off, the voltage-controlled oscillator can achieve a first frequency adjustment range by utilizing the first inductor 22 arranged in the inductor layer 21 of the RF chip 2; when the second switch 242 is turned on and the first switch 241 is turned off, the voltage-controlled oscillator can achieve a second frequency adjustment range by utilizing the second inductor 12 arranged in the substrate 1. Thus, through the switching and coordination of the first switch 241 and the second switch 242, the voltage-controlled oscillator can achieve a wider frequency adjustment range.

[0131] It should be noted that the first switch 241 is used to selectively conduct the path where the first inductor 22 is located. The specific type of the first switch 241 can be set according to actual needs and there is no restriction on it. For example, the first switch 241 can be set to two, and the two first switches 241 are respectively arranged in the circuit at the first terminal and the second terminal of the first inductor 22.

[0132] The second switch 242 is used to selectively conduct the path where the second inductor 12 is located. The specific type of the second switch 242 can be set according to actual needs and there is no restriction. For example, there can be two second switches 242, and the two second switches 242 are respectively arranged in the circuit at the first terminal and the second terminal of the second inductor 12.

[0133] Among them, for the first packaged inductor 121, the second packaged inductor 122 and the third packaged inductor 123, each packaged inductor is equipped with a second switch 242 for on / off control.

[0134] This disclosure also proposes a phase-locked loop circuit, including: a radio frequency module as described in this disclosure.

[0135] It is understandable that the stacked substrate 1 and RF chip 2 constitute the substrate-type packaged chip structure of the RF module. Since the first inductor 22 and the second inductor 12 are connected in parallel and have different inductance values, the voltage-controlled oscillator can use the first inductor 22 arranged in the inductor layer 21 of the RF chip 2 to achieve a first frequency adjustment range, and can also use the second inductor 12 arranged in the substrate 1 to achieve a second frequency adjustment range. Thus, the voltage-controlled oscillator can achieve a wider frequency adjustment range.

[0136] Furthermore, since the smaller the unit sheet resistance, the smaller the quality factor of the inductor, and the smaller the power consumption of the corresponding voltage-controlled oscillator, it can be seen that the quality factor of the second inductor 12 arranged in the package metal layer 11 of the substrate 1 is much better than that of the first inductor 22 in the RF chip 2. Thus, when the second inductor 12 is put into use, the voltage-controlled oscillator can obtain very good low power consumption performance.

[0137] Meanwhile, since the second inductor 12 is formed in the substrate 1 in the direction perpendicular to the RF chip 2, it does not occupy the area in the horizontal direction of the RF chip 2. Thus, an ultra-wide tuning range and extremely low power consumption can be achieved by using multiple stacked inductors without increasing the area, thereby significantly improving the performance of the voltage-controlled oscillator while saving costs.

[0138] It should be noted that the inductor implementation scheme based on the packaging substrate 1 in this embodiment can be applied to the voltage-controlled oscillator module in the phase-locked loop of communication SOC chips that have extreme requirements for power consumption and operating frequency adjustment range, such as satellite positioning, ultra-low power Bluetooth, WIFI, and 5G mobile terminals.

[0139] The typical architecture of a communication SOC (System on-chip) signal link, as exemplified, mainly includes RF, baseband, and high-speed interface sections. The RF phase-locked loop, baseband phase-locked loop, and high-speed interface phase-locked loop provide local oscillator clocks to the mixer for spectrum shifting, provide sampling clocks to the digital-to-analog converter and analog-to-digital converter, and provide data transfer clocks to the high-speed interface, respectively. This embodiment uses a solution based on package substrate 1 to implement the inductor, which can be mainly applied in scenarios where there is a strong demand for low power consumption and a wide tuning range for the clock, as these specifications can greatly extend the device's battery life and save chip area, thereby reducing production costs.

[0140] In addition to the RF module in the phase-locked loop circuit, the solution of this embodiment is also applicable to all other technical fields that require ultra-low power consumption and ultra-wide frequency adjustment range, such as RF modules for RF low-noise amplifiers, RF power amplifiers and other RF modules.

[0141] This disclosure also proposes an electronic device, including: a radio frequency module as described in this disclosure.

[0142] In the description of this disclosure, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Furthermore, in the description of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0143] Any process or method description in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more executable instructions for implementing a particular logical function or process, and the scope of preferred embodiments of this disclosure includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the function involved, as will be understood by those skilled in the art to which embodiments of this disclosure pertain.

[0144] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0145] Although embodiments of the present disclosure have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present disclosure. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present disclosure.

Claims

1. A radio frequency module, characterized in that, include: A substrate and a radio frequency chip are stacked together, the radio frequency chip including a voltage-controlled oscillator; A second inductor is provided in the substrate; The voltage-controlled oscillator adjusts its frequency according to the second inductor.

2. The radio frequency module according to claim 1, characterized in that, The radio frequency chip includes an inductor layer of a voltage-controlled oscillator, the inductor layer having a first inductor, and the voltage-controlled oscillator adjusting its frequency based on the first inductor and a second inductor.

3. The radio frequency module according to claim 2, characterized in that, The first inductor and the second inductor are connected in parallel; and / or, The substrate includes at least one encapsulation metal layer, and the second inductor is at least partially disposed on the encapsulation metal layer; and / or The unit sheet resistance of the encapsulation metal layer is less than the unit sheet resistance of the inductor layer; And / or, The first inductor and the second inductor have different inductance values.

4. The radio frequency module according to claim 3, characterized in that, The radio frequency chip also includes: The device layer of the voltage-controlled oscillator is disposed on the side of the inductor layer away from the substrate, and the device layer is provided with a switching unit for controlling the first inductor and the second inductor.

5. The radio frequency module according to claim 4, characterized in that, The at least one encapsulation metal layer includes: A first metal layer, wherein the unit sheet resistance of the first metal layer is less than the unit sheet resistance of the inductor layer, and the first metal layer is provided with a first packaged inductor. Wherein, the first packaged inductor and the first inductor are connected in parallel, and the inductance value of the first packaged inductor is greater than the inductance value of the first inductor; The switching unit is used to connect the path where the first inductor is located, or to connect the path where the first packaged inductor is located.

6. The radio frequency module according to claim 5, characterized in that, The projection of the first packaged inductor onto the inductor layer along the direction from the substrate to the RF chip is located outside the first inductor.

7. The radio frequency module according to claim 6, characterized in that, The at least one encapsulation metal layer further includes: A second metal layer is located on the side of the first metal layer away from the RF chip, and the unit sheet resistance of the second metal layer is smaller than the unit sheet resistance of the inductor layer. The second metal layer is provided with a second packaged inductor. Wherein, the second packaged inductor, the first packaged inductor and the first inductor are connected in parallel, and the inductance value of the second packaged inductor is greater than the inductance value of the first packaged inductor; The switching unit is used to connect at most one of the following paths: the path containing the first inductor, the path containing the first packaged inductor, and the path containing the second packaged inductor.

8. The radio frequency module according to claim 7, characterized in that, The projection of the second packaged inductor onto the first metal layer along the direction from the substrate to the RF chip is located outside the first packaged inductor.

9. The radio frequency module according to claim 8, characterized in that, The substrate further includes: A first dielectric substrate is disposed between the second metal layer and the first metal layer, and the first dielectric substrate has at least one through-hole first metal via, through which the second metal layer and the first metal layer are connected.

10. The radio frequency module according to claim 9, characterized in that, The at least one encapsulation metal layer further includes: A third metal layer is located on the side of the second metal layer away from the RF chip, and the sheet resistance of the third metal layer is less than the sheet resistance of the inductor layer. The third metal layer is provided with a third packaged inductor. Wherein, the third packaged inductor, the second packaged inductor, the first packaged inductor and the first inductor are connected in parallel, and the inductance value of the third packaged inductor is greater than the inductance value of the second packaged inductor; The switching unit is used to connect at most one of the following paths: the path containing the first inductor, the path containing the first packaged inductor, the path containing the second packaged inductor, and the path containing the third packaged inductor.

11. The radio frequency module according to claim 10, characterized in that, The projection of the third packaged inductor onto the second metal layer along the direction from the substrate to the RF chip is located outside the second packaged inductor.

12. The radio frequency module according to claim 11, characterized in that, The substrate further includes: The second dielectric substrate is disposed between the third metal layer and the second metal layer, and the second dielectric substrate is provided with at least one through second metal via, and the third metal layer and the second metal layer are connected through the second metal via; And / or, A third dielectric plate and a base plate are provided, wherein the third dielectric plate is disposed between the base plate and the third metal layer, and the third dielectric plate is provided with at least one through third metal via, and the base plate and the third metal layer are connected through the third metal via.

13. The radio frequency module according to claim 6, characterized in that, The substrate further includes: a fourth metal layer, the fourth metal layer being located on the side of the first metal layer closer to the radio frequency chip, and the unit sheet resistance of the fourth metal layer being greater than the unit sheet resistance of the inductor layer; And / or, The radio frequency chip further includes a fifth metal layer, which is located on the side of the inductor layer closest to the substrate, and the unit sheet resistance of the fifth metal layer is greater than the unit sheet resistance of the inductor layer.

14. The radio frequency module according to claim 13, characterized in that, The substrate further includes: a fourth dielectric plate and / or a fifth dielectric plate, wherein the fourth dielectric plate is disposed between the fourth metal layer and the first metal layer, and the fourth dielectric plate is provided with at least one through fourth metal via, the fourth metal layer and the first metal layer are connected through the fourth metal via, and the fifth dielectric plate is disposed between the fifth metal layer and the fourth metal layer, and the fifth dielectric plate is provided with at least one through fifth metal via, the fifth metal layer and the fourth metal layer are connected through the fifth metal via; And / or, The radio frequency chip further includes: a sixth dielectric substrate and / or a seventh dielectric substrate, wherein the sixth dielectric substrate is disposed between the inductor layer and the fifth metal layer, and the sixth dielectric substrate has at least one through-hole sixth metal via, and the inductor layer and the fifth metal layer are connected through the sixth metal via; the seventh dielectric substrate is disposed between the device layer and the inductor layer, and the seventh dielectric substrate has at least one through-hole seventh metal via, and the device layer and the inductor layer are connected through the seventh metal via.

15. The radio frequency module according to claim 4, characterized in that, The switching unit includes: At least one first switch is connected in series with the first inductor, and the first switch is used to selectively conduct the path where the first inductor is located; At least one second switch is connected in series with the second inductor, and the second switch is used to selectively conduct the path where the second inductor is located; The first switch and the second switch are not turned on at the same time.

16. The radio frequency module according to claim 2, characterized in that, The first inductor and the second inductor are respectively arranged in a ring, and the ring has an opening to form the first terminal and the second terminal of the inductor.

17. A phase-locked loop circuit, characterized in that, include: The radio frequency module as described in any one of claims 1-16.

18. An electronic device, characterized in that, include: The radio frequency module as described in any one of claims 1-16.

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