Electrostatic chuck assembly and charged particle beam device

By setting the apex of the ring electrode in the electrostatic chuck assembly above the upper surface of the wafer and applying voltage in layers or segments along the vertical direction, the problem of electric field distortion at the wafer edge is solved, resulting in a more uniform electric field distribution and higher imaging quality and resolution.

CN224355217UActive Publication Date: 2026-06-12ANGSTROM PRECISION INSTRUMENTS CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
ANGSTROM PRECISION INSTRUMENTS CORP
Filing Date
2025-04-29
Publication Date
2026-06-12

AI Technical Summary

⚠Technical Problem

Existing electrostatic chucks cannot adequately reduce electric field distortion at the wafer edge after applying a compensation voltage, resulting in poor image quality and resolution.

⚗Method used

Design an electrostatic chuck assembly in which the apex height of the annular electrode is higher than the upper surface of the wafer, and the annular electrode is layered or segmented along the vertical direction, and different voltages are applied to adjust the electric field distribution at the edge of the wafer.

🎯Benefits of technology

By smoothing the equipotential lines between the wafer edge and the ring electrode, the uniformity of the electric field distribution is improved, the influence of electric field distortion on the electron beam is reduced, and the imaging quality and resolution are enhanced.

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Abstract

The utility model discloses a kind of electrostatic chuck assembly and charged particle beam device, wherein the electrostatic chuck assembly includes: electrostatic chuck, for carrying wafer;Annular electrode, it is set around the electrostatic chuck;The vertex height of the annular electrode is higher than the upper surface of wafer placed on the electrostatic chuck.The utility model by the vertex height of annular electrode is set as higher than the upper surface of the wafer, make the equipotential line between wafer edge and annular electrode become gentle, improve the electric field distribution uniformity of wafer edge, and then promote the imaging quality and imaging resolution of charged particle beam device.
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