High temperature sulphur resistant thick film resistor

Abstract

The utility model discloses high temperature anti vulcanization thick film resistor, including high purity alumina substrate, high purity alumina substrate upper end fixedly connected with R resistance layer, the third end surface layer outer wall sleeve joint installation has second end surface layer, and second end surface layer outer wall sleeve joint installation has first end surface layer, first end surface layer lower extreme one side edge fixedly connected with the welding pad, the R resistance layer upper end is printed with G1 protection layer, and G1 protection layer upper end is printed with G2 protection layer, high purity alumina substrate lower extreme middle position protruding fixedly connected with the limit support pad. That high temperature anti vulcanization thick film resistor can strengthen the heat dissipation effect through two layers distribution's high temperature -resistant G2 material's G2 protection layer, and can through the copper plating structure optimization heat dissipation performance of third end surface layer, and can through the R resistance layer of thickening improve resistor power, and can through the welding pad steady welding, and can through the limit support pad effective bottom plate support, and install stable.

Description

Technical Field

[0001] This utility model relates to the field of resistor technology, specifically to a high-temperature anti-sulfurization thick-film resistor. Background Technology

[0002] Thick film resistors are important components in electronic products and are widely used in thick film circuits. They are a common type of resistor, characterized by screen printing of resistive paste onto a ceramic substrate, followed by a sintering process to solidify and stabilize the resistive paste on the ceramic substrate.

[0003] A thick-film resistor with sulfur resistance and moisture resistance, CN202420374104.8, effectively prevents the silver electrode from directly contacting the external environment and improves the resistor's sulfur resistance performance. However, it has shortcomings. Existing wafer resistors cannot effectively dissipate heat when operating under high temperature conditions, which cannot effectively increase power and has poor welding stability. Therefore, a high-temperature sulfur-resistant thick-film resistor is needed to solve the above problems. Utility Model Content

[0004] The purpose of this invention is to provide a high-temperature resistant sulfide thick film resistor to solve the problems mentioned in the background art, such as the inability to effectively dissipate heat, improve power, and achieve good welding stability when thick film resistors and wafer resistors operate under high-temperature conditions.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a high-temperature sulfide-resistant thick-film resistor, comprising a high-purity alumina substrate, an R resistor layer fixedly connected to the upper end of the high-purity alumina substrate, a fourth end face layer fitted onto the outer walls of both sides of the high-purity alumina substrate, a third end face layer fitted onto the outer wall of the fourth end face layer, a second end face layer fitted onto the outer wall of the third end face layer, and a first end face layer fitted onto the outer wall of the second end face layer, a welding pad fixedly connected to one edge of the lower end of the first end face layer, a G1 protective layer printed on the upper end of the R resistor layer, a G2 protective layer printed on the upper end of the G1 protective layer, and a limit support pad protruding and fixedly connected to the middle position of the lower end of the high-purity alumina substrate.

[0006] Preferably, the first end face layer is made of lead-free tin, the second end face layer is made of nickel, the third end face layer is made of copper, and the fourth end face layer is made of chromium. The fourth end face layer, the third end face layer, the second end face layer, and the first end face layer are distributed in four layers on the outer wall of the high-purity alumina substrate.

[0007] Preferably, the R resistive layer is thickened and laid on the upper end of the high-purity alumina substrate.

[0008] Preferably, the G2 protective layer has a double-layer structure, and the G2 protective layer is a high-temperature resistant G2 ointment.

[0009] Preferably, the lower end of the limiting support pad is flush with the lower end of the welding pad, and the limiting support pad is mounted in a supporting manner with the high-purity alumina substrate.

[0010] Preferably, the material of the welding pad is the same as that of the first end face layer, and the welding pad is distributed in a dot matrix pattern at the lower edge of the first end face layer.

[0011] Compared with the prior art, the beneficial effects of this utility model are: the high-temperature anti-sulfurization thick film resistor can enhance the heat dissipation effect through two layers of distributed high-temperature resistant G2 material G2 protective layer, and can optimize the heat dissipation performance through the copper plating structure of the third end face layer, and can increase the resistor power through the thickened R resistor layer, and can be stably welded through the welding pad, and can be effectively supported by the base plate through the limiting support pad, so as to ensure stable installation. Attached Figure Description

[0012] Figure 1 This is a perspective view of the high-temperature sulfide-resistant thick film resistor of this utility model;

[0013] Figure 2 This is a side view of the internal structure of the high-temperature sulfide-resistant thick film resistor of this utility model;

[0014] Figure 3 This utility model relates to a high-temperature sulfide-resistant thick-film resistor. Figure 2 Enlarged view of point A in the middle.

[0015] In the figure: 1. High-purity alumina substrate, 2. First end face layer, 3. R resistor layer, 4. G1 protective layer, 5. G2 protective layer, 6. Limiting support pad, 7. Second end face layer, 8. Third end face layer, 9. Soldering pad, 10. Fourth end face layer. Detailed Implementation

[0016] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0017] Please see Figure 1-3This utility model provides a technical solution: a high-temperature sulfide-resistant thick-film resistor, comprising a high-purity alumina substrate 1, a first end face layer 2, an R resistance layer 3, a G1 protective layer 4, a G2 protective layer 5, a limiting support pad 6, a second end face layer 7, a third end face layer 8, a welding pad 9, and a fourth end face layer 10. The R resistance layer 3 is fixedly connected to the upper end of the high-purity alumina substrate 1, and the R resistance layer 3 is thickened on the upper end of the high-purity alumina substrate 1, thus increasing the power output. The fourth end face layer is fitted onto the outer walls of both sides of the high-purity alumina substrate 1. The fourth end face layer 10 is fitted with a third end face layer 8 on its outer wall, a second end face layer 7 on its outer wall, and a first end face layer 2 on its outer wall. The first end face layer 2 is made of lead-free tin, the second end face layer 7 is made of nickel, the third end face layer 8 is made of copper, and the fourth end face layer 10 is made of chromium. The fourth end face layer 10, the third end face layer 8, the second end face layer 7, and the first end face layer 2 are distributed in four layers on the outer wall of the high-purity alumina substrate 1, which allows for copper plating on the end face and optimizes heat dissipation performance.

[0018] A solder pad 9 is fixedly connected to one edge of the lower end of the first end face layer 2. The solder pad 9 is made of the same material as the first end face layer 2, and the solder pad 9 is distributed in a dot matrix position on the lower edge of the first end face layer 2. This allows the solder pad 9 to be soldered more stably. A G1 protective layer 4 is printed on the upper end of the R resistor layer 3, and a G2 protective layer 5 is printed on the upper end of the G1 protective layer 4. The G2 protective layer 5 has a double-layer structure and is a high-temperature resistant G2 paste. This allows the G2 protective layer 5 to provide double protection and enhance heat dissipation performance.

[0019] A limiting support pad 6 is fixedly connected to the lower middle position of the high-purity alumina substrate 1. The lower end of the limiting support pad 6 is flush with the lower end of the welding pad 9, and the limiting support pad 6 is installed in a supporting manner with the high-purity alumina substrate 1. This allows the high-purity alumina substrate 1 to be supported at the lower end and installed stably.

[0020] Working principle: When using this high-temperature anti-sulfurization thick film resistor, the device is first assembled, then fixed by soldering with soldering pad 9, and further supported by limiting support pad 6. In use, the power can be increased by the R resistance layer 3, then double protection can be achieved by the G2 protective layer 5, and heat dissipation performance can be enhanced. Then, the third end face layer 8 is used for auxiliary heat dissipation. This is the usage process of the high-temperature anti-sulfurization thick film resistor.

[0021] It should be noted that this utility model is a high-temperature anti-sulfurization thick film resistor. All components are standard parts used by China or parts known to those skilled in the art. Its structure and principle can be learned by those skilled in the art through technical manuals or conventional experimental methods.

[0022] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A high-temperature sulfide-resistant thick-film resistor, comprising a high-purity alumina substrate (1), wherein an R-resistor layer (3) is fixedly connected to the upper end of the high-purity alumina substrate (1), characterized in that: The high-purity alumina substrate (1) has a fourth end face layer (10) fitted on both sides of its outer wall, and a third end face layer (8) fitted on the outer wall of the fourth end face layer (10), a second end face layer (7) fitted on the outer wall of the third end face layer (8), and a first end face layer (2) fitted on the outer wall of the second end face layer (7). A solder pad (9) is fixedly connected to one side edge of the lower end of the first end face layer (2). A G1 protective layer (4) is printed on the upper end of the R resistor layer (3), and a G2 protective layer (5) is printed on the upper end of the G1 protective layer (4). A limit support pad (6) is fixedly connected to the middle position of the lower end of the high-purity alumina substrate (1).

2. The high-temperature sulfide-resistant thick-film resistor according to claim 1, characterized in that: The first end face layer (2) is made of lead-free tin, the second end face layer (7) is made of nickel, the third end face layer (8) is made of copper, and the fourth end face layer (10) is made of chromium. The fourth end face layer (10), the third end face layer (8), the second end face layer (7) and the first end face layer (2) are distributed in four layers on the outer wall of the high-purity alumina substrate (1).

3. The high-temperature sulfide-resistant thick-film resistor according to claim 2, characterized in that: The R resistor layer (3) is thickened and laid on the upper end of the high-purity alumina substrate (1).

4. The high-temperature sulfide-resistant thick-film resistor according to claim 3, characterized in that: The G2 protective layer (5) has a double-layer structure and is a high-temperature resistant G2 ointment.

5. The high-temperature anti-sulfurization thick-film resistor according to claim 4, characterized in that: The lower end of the limiting support pad (6) is flush with the lower end of the welding pad (9), and the limiting support pad (6) is mounted in a supporting manner with the high-purity alumina substrate (1).

6. The high-temperature anti-sulfurization thick-film resistor according to claim 5, characterized in that: The welding pad (9) is made of the same material as the first end face layer (2), and the welding pad (9) is distributed in a dot matrix position at the lower edge of the first end face layer (2).

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