Electronic device and electronic module

Abstract

This invention relates to an electronic device and an electronic module. The electronic device includes: an element with a negative temperature coefficient (R120) and a temperature control mechanism having a resistance (R130) that varies with temperature T, such that the sum of the total resistances (R) in a second temperature sub-interval (302) greater than a setpoint temperature (305) is strictly greater than the total resistance (R) at that setpoint temperature (305). The electronic device provided by this invention can effectively suppress or even avoid the self-heating effect of the element due to its negative temperature coefficient, thus maintaining the element temperature stably near the setpoint temperature. Furthermore, by connecting the device of this invention in parallel with another electronic device to form an electronic module, the self-heating effect of the electronic device can be effectively controlled, thereby limiting current deviation. Therefore, the module according to this invention is less susceptible to damage or accelerated aging.

Description

Technical Field

[0001] The technical field of this invention relates to electronic devices, such as those that can be used in power element electronic circuits. This technical field also relates to components of such devices that exist in the form of electronic modules. Background Technology

[0002] The literature [G. Perez et al., Performance of diamond semiconductors in power electronics applications, Diamond and Related Materials, Vol. 110, 2020, 108154, ISSN 0925-9635, https: / / doi.org / 10.1016 / j.diamond.2020.108154] describes an electronic component, particularly a Schottky diode made of a wide-bandgap (WBG) semiconductor material (diamond in this case), and illustrates the problems that arise when such components are used in parallel.

[0003] When the Schottky diode is in the on-state, its resistance changes non-monotonically with temperature, reaching its minimum value at 640K. This Schottky diode exhibits a negative temperature coefficient (NTC) in the temperature range from ambient temperature to 640K, meaning its resistance decreases as temperature increases. When the temperature is above 640K, the Schottky diode exhibits a positive temperature coefficient (PTC), meaning its resistance increases as temperature increases.

[0004] The authors point out that a negative temperature coefficient may induce a self-heating phenomenon: as the resistance decreases, the temperature of the Schottky diode continues to rise until it reaches an equilibrium temperature of approximately 640K. This self-heating phenomenon enables the Schottky diode to achieve minimum resistance in the on-state.

[0005] However, for some electronic components with negative temperature coefficients, their equilibrium temperature may be too high to integrate. For example, this temperature may exceed the tolerance temperature (damage temperature) of their protective casing. Therefore, it is necessary to control the maximum temperature reached by the electronic components during operation.

[0006] To control the temperature of components with negative temperature coefficients, G. Perez et al. proposed coupling them with a heat sink. This allows heat dissipation from the component to be released, thus regulating self-heating. However, the authors also point out that the size of the heat sink increases as the target operating temperature decreases. Furthermore, the miniaturization trend of electronic components is incompatible with the increase in heat sink size; therefore, this solution has limitations in practical applications.

[0007] Therefore, there is an urgent need to develop a solution for controlling the temperature of electronic components with negative temperature coefficients. Summary of the Invention

[0008] To achieve this objective, the present invention provides an electronic device comprising an electronic component having a resistor having a negative temperature coefficient within a specific temperature range, the temperature range including a setpoint temperature that divides the temperature range into two sub-temperature ranges: a. The first temperature sub-interval corresponds to the temperature within the temperature interval that is less than or equal to the setpoint temperature; and b. The second temperature sub-interval corresponds to the temperature within the temperature interval that is strictly higher than the setpoint temperature.

[0009] The significant feature of this electronic device is that it includes a thermistor, which is electrically connected in series with and thermally coupled to the electronic components. Its resistance value changes with temperature, such that the total resistance of the electronic device in a second temperature sub-range (i.e., the sum of the resistance of the electronic components and the resistance of the thermistor) is strictly greater than the total resistance at the setpoint temperature.

[0010] The term "thermal coupling element" refers to a component whose thermal resistance between components is less than or equal to 1 K / W.

[0011] The term "thermometer" broadly refers to all components with a positive temperature coefficient of resistance. Examples include typical thermistors, resistance temperature detectors (RTDs), and semiconductor components whose resistance increases with temperature.

[0012] The electronic components used (which may be simply referred to as "components") may be, for example, of the type described in the literature of G. Perez et al. mentioned above. A thermistor connected in series with this component introduces a variable resistance that changes with temperature in the component's current path. Therefore, increasing the thermistor's resistance value limits the current flowing through the component, thereby suppressing the heating effect generated when current flows through the component.

[0013] Specifically, because the total resistance increases above the setpoint temperature, a boundary effect forms near the setpoint temperature. In this way, when the component temperature exceeds the setpoint temperature, its internal current is limited, and the heat generation decreases accordingly. This effectively suppresses or even avoids the self-heating effect caused by the negative temperature coefficient of the component, keeping the component temperature stably maintained near the setpoint temperature.

[0014] The passive nature of thermistors simplifies the design and implementation of electronic components. No additional power is required to power the thermistor, and its characteristic parameters are determined during manufacturing. Maintenance is also simplified, as there is no need to calibrate or recalibrate the thermistor. Therefore, this electronic device can be used in a "set and forget" manner.

[0015] Preferably, the resistive characteristics of the thermistor cause the total resistance of the device to increase within the second temperature sub-range.

[0016] Preferably, the resistance value of the thermistor in the second temperature sub-range is strictly greater than the resistance value of the electronic component at the setpoint temperature.

[0017] Preferably, the resistance value of the thermistor remains constant or increases within the first temperature sub-range.

[0018] Preferably, the resistance value of the thermistor in the first temperature sub-range is less than or equal to 10% of the resistance value of the electronic component at the setpoint temperature.

[0019] Preferably, the thermal coupling resistance between the thermistor and the electronic component is less than or equal to 0.01 K / W.

[0020] Preferably, the thermistor is fixed to the electronic component by bonding, welding, soldering or sintering.

[0021] Alternatively, the electronic components and thermistors are integrated into a single structure, for example, made from the same substrate or the same stacked structure.

[0022] Preferably, the electronic device includes a conductive and thermally conductive substrate, and the electronic components are fixed to the substrate by means of bonding, welding, soldering or sintering, and the thermistor is also fixed to the substrate by the above means.

[0023] Preferably, the element is made of diamond.

[0024] In existing solutions, parallel connection of components with negative temperature coefficients can exacerbate or even accelerate self-heating in electronic components, potentially leading to thermal runaway, even if these components are theoretically identical. In fact, variations in manufacturing processes (even very small ones) always result in differences in these electronic components. According to existing technology, current flowing through each component causes self-heating. However, manufacturing variations will cause one component to heat up more dramatically. The decrease in resistance caused by self-heating concentrates current in the self-heating component, while the current in the other component decreases, potentially leading to cooling or limiting heat generation (or increasing resistance in NTC devices). The current is thus severely biased towards one component, potentially causing direct damage to that component (or its integrated environment) or accelerated aging. This problem is particularly pronounced when two components with negative temperature coefficients are connected in parallel. The problem is even more severe when these components are integrated into power electronic devices. This is because the current in power electronic circuits is typically determined by the circuit's load. Therefore, components cannot regulate the current flowing through the circuit to limit heat generation; the current must be distributed fairly.

[0025] To address this problem, the present invention also provides an electronic module, comprising: a. An electronic device according to the invention; and b. One or more additional electronic devices connected in parallel with the said electronic devices.

[0026] By connecting the device of the present invention in parallel with another electronic device (which is not necessarily the device according to the present invention or a resistor with a negative temperature coefficient) to form a module, the self-heating effect of the electronic device can be effectively controlled, thereby limiting the current deviation. Therefore, the module according to the present invention is not easily damaged or aged prematurely.

[0027] Preferably, the electronic device is thermally coupled to at least one additional electronic device.

[0028] Preferably, the electronic module is a power electronic module, and at least one of the electronic devices and the at least one additional electronic device is made of diamond.

[0029] In a particularly preferred embodiment, the at least one additional electronic device is also the electronic device described in this invention. Thus, each device according to the invention can effectively limit the self-heating effect of a single element and prevent excessive current deflection to that single element. Attached Figure Description

[0030] Figure 1 The results of digital simulation of an electrical component based on existing technology are shown. This electronic component has a negative temperature coefficient within a specific temperature range.

[0031] Figure 2 and Figure 3 First and second digital simulation results of the electronic device according to the present invention are shown respectively.

[0032] Figure 4 A first embodiment of the electronic device according to the present invention is schematically shown, the electronic device being presented in a state without a protective casing and with a protective casing, respectively.

[0033] Figure 5 A second embodiment of the electronic device according to the invention is schematically shown, which is also presented in both unprotected and protected states.

[0034] Figure 6 An example of an equivalent circuit diagram of an electronic module according to the present invention is shown.

[0035] Figure 7 and Figure 8 First and second digital simulation results of an electronic module according to the prior art and an electronic module according to the present invention are shown respectively.

[0036] Figure 9 A first embodiment of the electronic module according to the present invention is schematically shown, the electronic module being presented in both a state without a protective casing and a state with a protective casing.

[0037] Figure 10A second embodiment of the electronic module according to the present invention is illustrated schematically.

[0038] The accompanying drawings are for illustrative purposes only and do not constitute a limitation of the invention. These drawings are schematic diagrams intended to aid in understanding the invention, and their scale may not necessarily correspond to that of actual applications. In particular... Figures 1 to 10 It is not a concrete representation of the actual situation. Detailed Implementation

[0039] This invention aims to limit the self-heating problem of electronic component 120. Since the component temperatures in the field of power electronic devices can be extremely high, this invention is advantageously applicable to related equipment in the field of power electronic devices.

[0040] The electronic device 100 according to the invention includes an electronic element 120. For example, this element may be a prior art element, such as a junction (French for diode or transistor). More specifically, a Schottky diode made of diamond may be used.

[0041] The special feature of component 120 is that its resistance R120 exhibits a negative temperature coefficient characteristic within a specific temperature range of 300°C. Components whose resistance changes negatively with temperature are called "negative temperature coefficient components" (note that "change" here refers to continuous changes in parameters such as resistance or temperature). Such components can generate self-heating without a control mechanism, and in some cases, may even lead to thermal runaway.

[0042] A significant feature of the electronic device 100 of the present invention is that a thermistor 130 is added to the element 120. The thermistor 130 is configured to limit the self-heating phenomenon of the element 120.

[0043] Figure 1 and Figure 2 Simulation results of the device 100 according to the present invention are shown. Figure 1 The simulation results for the device without thermistor 130 are shown. In other words, Figure 1 This only reflects the performance of component 120 itself. The results are consistent with, for example, the observable performance of existing electronic components. Further technical gains from adding the thermistor 130 can be measured by analyzing the performance of component 120 separately.

[0044] Figure 2 Simulation results for the same device 100 are shown, except that the simulation incorporates the effect of the thermistor 130.

[0045] exist Figure 1 and Figure 2In this model, component 120 is modeled as a Schottky diode made of diamond. Diamond is a material known for its negative temperature coefficient of resistance. Component 120 can also be replaced by other models, such as an aluminum nitride diode (which also has a negative temperature coefficient) or a diamond / aluminum nitride-based transistor junction. Figure 1 and Figure 2 All results were obtained based on the fact that component 120 was in the on state.

[0046] Typically, element 120 is preferably a unipolar element (also known as a "unipolar conductive" element), for example, made of a unipolar semiconductor material. As mentioned above, this material can be diamond or aluminum nitride. Gallium nitride (GaN) or gallium trioxide (Ga2O3) may also be used. The phrase "made of a certain material" as used herein should be understood to include that material as well as other possible materials.

[0047] In unipolar semiconductor materials, conduction is primarily dominated by a single type of charge carrier, either electrons or holes. Conversely, in bipolar semiconductor materials (such as silicon), both types of charge carriers participate in the conduction process simultaneously. Unipolar devices offer numerous advantages. For example, the characteristic of conducting by a single type of charge carrier allows for faster device switching speeds. Compared to bipolar devices, these devices also exhibit superior energy efficiency. It should be noted that unipolar devices are generally simpler to design and manufacture than bipolar devices.

[0048] like Figure 2 As shown, the thermistor 130 (also known as a "thermal resistor") is modeled as a resistor R130, whose resistance value changes with temperature.

[0049] Thermistor 130 is electrically connected in series with element 120. In this way, the current flowing through element 120 also flows through the thermistor. Furthermore, it limits the current flowing through both elements 120 and 130. Thermistor 130 is also thermally coupled to element 120, such that the temperature of thermistor 130 is close to (if not equal to) the temperature of element 120. "Close to" means the temperature difference is within ±10%, or even within ±5%. The thermal coupling between the two elements 120 and 130 is modeled with a thermal resistance of less than or equal to 1 K / W. In this way, an increase in the temperature of element 120 will affect thermistor 130. Typically, a thermal resistance of less than or equal to 1 K / W is low enough to ensure a stable thermal equilibrium. However, even lower thermal resistance values, such as ≤0.01 K / W, are preferable.

[0050] Figure 1The graph shows the resistance R120 measured across component 120 as a function of temperature. The curve is parabolic, reaching a minimum resistance near a temperature of 303°C (defined as the "equilibrium temperature," approximately 300°C). This temperature is the critical point where the component's self-heating effect tends to stabilize. Of course, the actual temperature of component 120 may be affected by other factors, such as Joule losses within the component itself, or thermal coupling with a heat sink (or heat bath). Below the equilibrium temperature of 303°C, the resistance R120 decreases with increasing temperature (i.e., the slope of the resistance change with temperature is negative).

[0051] Therefore, in the temperature range below the equilibrium temperature of 303, component 120 has a negative temperature coefficient. This means that without current regulation or thermal regulation, component 120 will self-heat when energized until the resistance R120 reaches its minimum value and the temperature reaches the equilibrium temperature of 303.

[0052] Above the equilibrium temperature of 303°C, the resistance R120 increases with increasing temperature. In other words, in another temperature range above the equilibrium temperature, component 120 has a positive temperature coefficient.

[0053] Figure 1 An example of a so-called "maximum" temperature 304 is also shown. This temperature represents an insurmountable critical point for component 120, which may be a critical value that would lead to damage, or the limit temperature that the protective housing 160 can withstand. To prevent any performance degradation, a temperature called a "setpoint" temperature 305 may be set as the ideal operating temperature for component 120, which is determined, for example, based on the maximum temperature 304 and a possible temperature margin.

[0054] Therefore, the temperature range 300 in which component 120 exhibits a negative temperature coefficient includes the highest temperature 304 and the setpoint temperature 305. The setpoint temperature 305 divides the temperature range 300 into two sub-ranges 301 and 302: a. The first temperature sub-interval 301 includes all temperatures in temperature interval 300 that are less than or equal to the setpoint temperature 305; b. The second temperature sub-range 302 includes all temperatures in temperature range 300 that are strictly greater than the setpoint temperature 305.

[0055] Figure 2 The effect of thermistor 130 on the thermal performance of device 100 is shown. Figure 1 The resistor R120 of component 120 shown is in Figure 2 The text is marked together for comparative analysis. Figure 2 The resistance value R130 of the thermistor 130 is also marked to illustrate the temperature control mechanism. The total resistance of device 100 (i.e., the resistance presented when current flows through element 120 and the thermistor 130) corresponds to... Figure 2 The resistance value marked "R" is equal to the sum of the resistance values ​​of resistors R120 and R130 mentioned above.

[0056] The resistance value R130 of the thermistor 130 is set to vary with temperature, such that the total resistance R in the second temperature sub-interval 302 is strictly greater than the total resistance R at the setpoint temperature 305. Therefore, the total resistance R no longer exhibits a negative temperature coefficient characteristic throughout the entire temperature range 300. If it might exhibit a negative temperature coefficient in the first sub-interval 301, it will necessarily exhibit a positive temperature coefficient in the second sub-interval 302. Therefore, self-heating will not occur in the second sub-interval 302, which includes the highest temperature 304. The setpoint temperature 305 thus becomes the new equilibrium temperature of the device 100.

[0057] During the self-heating process, thermal inertia may occur, causing the temperature of component 120 to temporarily rise. However, as long as the margin between the setpoint temperature 305 and the maximum temperature 304 is sufficient, the temperature of component 120 will not reach the maximum temperature 304. Eventually, the temperature of device 100 (and consequently the temperature of component 120) will stabilize near the setpoint temperature 305.

[0058] like Figure 2 As shown, the resistance value R130 of the thermistor 130 increases within the second temperature sub-interval 302, exhibiting a positive temperature coefficient characteristic within this interval. By setting the slope of the resistance value R130's change, a local minimum of the total resistance R can be formed near the setpoint temperature 305. The larger the slope of the resistance value R130's change, the more effectively the self-heating effect within the second sub-interval 302 can be suppressed, thereby precisely controlling the temperature of the element 120. In the illustrated example, the resistance value R130 of the thermistor 130 exhibits a monotonic change. However, a non-monotonic design can also be employed, provided that a local minimum of resistance R is always ensured near the setpoint temperature 305.

[0059] like Figure 2 As shown, the resistance value R130 of the thermistor 130 exhibits a low resistance value within the first sub-interval 301, lower than the resistance value R120 of the component 120 within the same sub-interval 301. Within the first sub-interval 301, the resistance value R130 of the thermistor 130 is, for example, less than or equal to 10% of the resistance value R120 of the component 120. Therefore, the loss generated by the thermistor 130 in the circuit path is at a low level, or even negligible.

[0060] The resistance value R130 of the thermistor 130 can remain constant within the first sub-interval 1 (e.g. Figure 2As shown), or it shows an increasing trend. In the latter case, it has a positive temperature coefficient within the first sub-interval 301. As long as the resistance R130 of the thermistor 130 within this sub-interval 301 preferably remains less than or equal to 10% of the resistance value R120 of the element 120 within this sub-interval, it can also show a decreasing trend within this sub-interval 301. In one embodiment, the resistance value R130 of the thermistor 130 shows an increasing trend in both the first sub-interval 301 and the second sub-interval 302. In other words, it has a positive temperature coefficient throughout the entire temperature range.

[0061] exist Figure 2 In the example, the resistance value R130 of the thermistor 130 shows an increasing trend starting from a certain threshold temperature. This threshold temperature is lower than the setpoint temperature 305. However, the greater the slope of the resistance change of the thermistor 130 within the second temperature sub-range 302, the smaller the difference between the threshold temperature and the setpoint temperature 305 of the control mechanism (thermistor), and the better the temperature control effect.

[0062] Figure 3 It shows the basis Figure 1 and Figure 2 Two sets of digital simulation results were obtained for device 100 shown. These results specifically present the results without the thermistor 130 ( Figure 1 (situation) and with thermistor 130 ( Figure 2 The temperature and current distribution over time in component 120 (in the case of [condition]) are shown. The results indicate that the temperature control mechanism 130 effectively achieves the cooling effect. The cooling primarily stems from a reduction in current—as shown in the second curve, the thermistor 130 limits the total current flowing through component 120.

[0063] Figure 4 A first embodiment of the electronic device 100 of the present invention is schematically shown. The upper part of the figure shows the electronic device 100 without the protective housing 160, while the lower part shows the electronic device 100 with the protective housing 160 installed.

[0064] In this embodiment, element 120 is a multilayer stacked structure, such as a Schottky junction. The multilayer stacked structure includes, for example, a diamond-based semiconductor layer and a metal layer. In this example, thermistor 130 is directly assembled onto element 120. For example, it can be bonded to the anode or cathode of element 120 using conductive and thermally conductive adhesive. This type of assembly can be referred to as a "monolithic" assembly. The advantage of this embodiment is that it provides excellent electrical connectivity and thermal coupling performance (i.e., thermal resistance less than 0.01 K / W). Thermistor 130 can also be fixed to element 120 (anode or cathode) by welding, fusion, or sintering to achieve even better thermal coupling and electrical contact.

[0065] Device 100 may also include two conductive electrodes 111 and 112. These electrodes 111 and 112 may be configured as contact leads, for example. Element 120 is connected in series with a thermistor 130 between the two conductive electrodes 111 and 112. For example, the thermistor 130 may be connected in series between element 120 and one of the two conductive electrodes 111 and 112.

[0066] Device 100 may also include a substrate 140, which may be referred to as a "substrate," for securing the assembly containing element 120 and thermistor 130. For example, element 120 or thermistor 130 may be secured to substrate 140 by adhesive bonding, soldering, tin soldering, or sintering. Substrate 140 may be conductive, thereby enabling the assembly containing element 120 and thermistor 130 to be connected to either of the two conductive electrodes 111, 112. For this purpose, an electrical contact (and preferably a mechanical contact) 150 may be established between substrate 140 and either of the two electrodes 111, 112.

[0067] The assembly including element 120 and thermistor 130 can be connected to another conductive electrode 111 via bonding leads (also known as wire bonding). The bonding leads thereby connect the conductive electrode 111 to element 120 (if thermistor 130 is connected to substrate 140) or to thermistor 130 (if element 120 is connected to substrate). The conductive electrode 111 connected via bonding leads can be secured to substrate 140 by means of electrically insulating mechanical contacts 151, thereby preventing substrate 140 from short-circuiting element 120.

[0068] Device 100 may include a housing 160, for example, which may be supported on a substrate 140 and encapsulate an assembly containing element 120 and thermistor 130.

[0069] Figure 5 The device 100 shown is Figure 4 The difference in device 100 is that element 120 and thermistor 130 are not in direct contact, but are electrically connected and thermally coupled through substrate 140. Therefore, substrate 140 preferably has electrical and thermal conductivity.

[0070] Component 120 can be fixed to substrate 140 by direct bonding, soldering, tin soldering, or sintering. Thermistor 130 can also be directly bonded, soldered, tin soldered, or sintered to substrate 140. The distance between components 120 and 130 must ensure that their thermal coupling resistance is less than 1 K / W, preferably less than 0.01 K / W. To prevent short circuits between components 120 and thermistor 130, conductive electrodes 111 and 112 are electrically insulated from substrate 140. They can be fixed using electrically insulated mechanical contacts 150 and 151. Component 120 can be connected to one of electrodes 111 via bonding leads 113, while thermistor 130 can be fixed to the other electrode 112 via additional bonding leads. An advantage of this embodiment of device 100 is its ease of implementation, as components 120 and thermistor 130 can be mounted independently of each other.

[0071] Figures 6 to 8 A schematic diagram of two devices 100 of the present invention connected in parallel to form an electronic module 200 is shown. Even though they belong to the same category, the two devices 100 are distinguished by the letters A and B.

[0072] Figure 6 An embodiment of module 200 and its two constituent devices A and B are schematically shown. Module 200 is connected to current source 10. Devices A and B are connected in parallel within module 200. Therefore, the current supplied by power source 10 is distributed to each device A and B. If current source 10 is replaced with a voltage source, the principle remains the same. In this case, the current flowing through the module is determined by device 100, and the current is distributed among the parallel-connected devices 100.

[0073] Without thermistor 130, if either of the two components 120 heats up, it may dominate and shunt most or all of the current output from current source 10. This would cause component 120 to overheat, potentially leading to thermal runaway and / or performance degradation, or at least premature aging.

[0074] Figure 7 and Figure 8 The working mechanism of thermistor 130 in devices A and B is explained. These figures present simulation results of the example module 200 of this invention. Devices A and B belong to the same type and are assumed to be exactly the same. However, there are slight differences in their characteristics; for example, the resistance value of device A is slightly lower than that of device B. Figure 6 With Figure 2 In the same manner, the states of devices A and B with and without thermistor 130 are shown respectively.

[0075] For example, without control mechanism 130, device A (marked with a square) will experience self-heating, its resistance will continuously decrease until the temperature rises to approximately 200°C. Device A will shunt most of the current, thus weakening the self-heating effect of device B (marked with a triangle). In conclusion... Figure 7 In the simulation results, devices A and B achieved thermal equilibrium through a heat bath, thus limiting the temperature rise of device A. However, if the thermal equilibrium is insufficient, device A will experience a greater temperature rise, leading to performance degradation or premature aging.

[0076] By introducing a thermistor 130, each device A and B will automatically adjust its resistance value to counteract current slagging, thereby achieving balanced current distribution. Therefore, none of the devices A and B (marked by circles and crosses, respectively) will experience thermal runaway.

[0077] Figure 8 The effect of the thermistor 130 on each device A and B is further illustrated. The figure shows the temperature and current distribution of devices A and B when the thermistor 130 is inactive and when it is activated. When the thermistor 130 is activated, the temperatures of devices A and B are close. Due to the significant heating effect of the current supplied by power supply 10, the temperature of each device A and B is slightly higher than the setpoint temperature 305. However, thanks to the effect of the thermistor 130, the self-heating effect of the devices is effectively suppressed. The temperatures of devices A and B are closer, indicating that the current supplied by power supply 10 is better distributed between the two devices. Therefore, the module 200 using the present invention is less prone to performance degradation or premature aging.

[0078] Figure 8 The results show that when the thermistor is functioning, the temperature distribution between the two devices A and B is more balanced. The current flowing through the two devices A and B is also more similar.

[0079] According to one improvement, module 200 may include at least three devices 100 connected in parallel. The principle of temperature equalization is thus advantageously applied in this improvement.

[0080] Figure 9 A first embodiment of the electronic module 200 of the present invention is schematically shown. The upper part of the figure shows the module 200 without the protective housing 260 installed, while the lower part shows the module with the protective housing 260 installed.

[0081] In this embodiment, the devices 100 are electrically connected in parallel. Within each device 100, the assembly consisting of element 120 and thermistor 130 is electrically connected and thermally coupled via a conductive and thermally conductive substrate 140. This embodiment is similar to... Figure 4 The illustrated embodiment is similar. The substrates of the two devices A and B are independent and separated to avoid electrical contact and the resulting short circuit.

[0082] Devices A and B are connected in parallel via metal traces 221 and 222 (e.g., copper, also known as "busbars"). Each device A and B can be connected between two busbars 221 and 222 via bonding wire 113.

[0083] Module 200 may also include two conductive electrodes (or two sets of conductive electrodes) 211, 212, which constitute the contact pins of module 200. Each busbar 221, 222 may be connected to one of the sets of conductive electrodes 211, 212 respectively. Module 200 may also include a support 240, and busbars 221, 222 and devices A, B (e.g., via their substrate 140) may extend / be fixed against the support.

[0084] Module 200 may also include a heat-conducting plate 280 for equalizing the internal temperature of the module, thereby limiting the temperature and current dispersion of the electronic device 100. The heat-conducting plate 280 may be thermally coupled to the support member 240 or to the heat sink.

[0085] Figure 10 The module 200 shown is Figure 9 The difference between the modules is that the components 120 and the thermistor of each device A and B adopt a monolithic integrated structure (similar to...). Figure 4 (Structure shown). In this embodiment, element 120 is in direct contact with the thermistor. Therefore, the substrates of devices A and B do not need to be independently coordinated and can be integrated into a single substrate. This enables thermal coupling between devices 100. When the devices are identical, the temperature difference between the two device elements 120 can be further reduced, thereby more effectively reducing the current and temperature dispersion of device 100.

[0086] This invention is not limited to the above embodiments, but extends to all implementations that conform to the features of this invention.

Claims

1. An electronic device (100) comprising an electronic component (120) having a resistor (R120) having a negative temperature coefficient over a temperature range (300), the temperature range (300) including a setpoint temperature (305) that divides the temperature range into two temperature sub-ranges: • A first temperature sub-range (301) corresponds to a temperature in the temperature range (300) that is less than or equal to the setpoint temperature (305); and • The second temperature sub-interval (302) corresponds to the temperature in the temperature interval (300) that is strictly greater than the setpoint temperature (305). The electronic device is characterized in that it includes a thermistor (130) electrically connected in series with and thermally coupled to the electronic element (120), the thermistor having a temperature-dependent resistance (R130) such that the total resistance (R) of the electronic device (100) in the second temperature sub-range (302) is strictly greater than the total resistance (R) at the setpoint temperature (305), wherein the total resistance (R) of the electronic device (100) includes the sum of the resistance (R120) of the electronic element (120) and the resistance (R130) of the thermistor (130).

2. The electronic device (100) according to claim 1, wherein, The resistance (R130) of the thermistor (130) causes the total resistance (R) of the electronic device (100) to increase within the second temperature sub-range (302).

3. The electronic device (100) according to claim 1, wherein, The resistance (R130) of the thermistor (130) in the second temperature sub-range (302) is strictly greater than the resistance (R120) of the electronic component (120) at the set point temperature (305).

4. The electronic device (100) according to claim 1, wherein, The resistance (R130) of the thermistor (130) remains constant or increases within the first temperature sub-range (301).

5. The electronic device (100) according to claim 1, wherein, The resistance (R130) of the thermistor (130) in the first temperature sub-range (301) is less than or equal to 10% of the resistance (R120) of the electronic component (120) at the set point temperature (305).

6. The electronic device (100) according to claim 1, wherein, The thermal resistance of the thermal coupling between the thermistor (130) and the electronic component (120) is less than or equal to 0.01 K / W.

7. The electronic device (100) according to claim 1, wherein, The thermistor (130) is fixed to the electronic component (120) by means of bonding, welding, soldering or sintering.

8. The electronic device (100) according to claim 1, wherein, The electronic component (120) and the thermistor (130) are an integrated structure.

9. The electronic device (100) according to claim 1, comprising a substrate (140) having both electrical and thermal conductivity, wherein the electronic component (120) is fixed to the substrate (140) by means of bonding, welding, soldering or sintering, and the thermistor (130) is also fixed to the substrate (140) by means of bonding, welding, soldering or sintering.

10. The electronic device (100) according to any one of claims 1 to 9, wherein the electronic element (120) is a unipolar element.

11. The electronic device (100) according to any one of claims 1 to 9, wherein the electronic element (120) is made of diamond, AlN, GaN or Ga2O3.

12. An electronic module (200), comprising: • The electronic device (100) according to any one of claims 1 to 11; as well as • At least one additional electronic device connected in parallel with the electronic device (100).

13. The electronic module (200) according to claim 12, wherein, The electronic device (100) is thermally coupled to the at least one additional electronic device.

14. The electronic module (200) according to any one of claims 12 or 13, wherein, The at least one additional electronic device (100) is an electronic device (100) according to any one of claims 1 to 11.

15. The electronic module (200) according to any one of claims 12 or 13, wherein, The electronic module (200) is a power electronic module, and at least one of the electronic device (100) and the at least one additional electronic device is made of diamond.

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