Polishing pad, polishing disk, and chemical mechanical polishing apparatus
By adopting a polishing pad with a double-layer support structure, the problem of uneven polishing in the wafer edge area during CMP polishing is solved, achieving higher polishing uniformity and stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SIEN (QINGDAO) INTEGRATED CIRCUITS CO LTD
- Filing Date
- 2025-07-28
- Publication Date
- 2026-06-23
AI Technical Summary
In existing CMP polishing processes, the polishing uniformity in the wafer edge area is poor, especially due to the wavy texture formed in the wafer edge area caused by the flexible material of the polishing pad, resulting in uneven polishing rate.
The polishing pad adopts a double-support structure. The first support layer has closed holes and the second support layer has through holes. Combined with the polishing layer, the polishing pad provides a more uniform polishing effect in the wafer edge area.
It improves the grinding uniformity of the wafer edge region, and the pressure and grinding rate are close to a linear relationship, reducing the area affected by the wafer edge during the grinding process and improving the stability and uniformity of the grinding process.
Smart Images
Figure CN224390780U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of chemical mechanical polishing technology, specifically relating to a polishing pad, polishing disc, and chemical mechanical polishing device. Background Technology
[0002] Chemical-mechanical polishing (CMP) is an important part of the semiconductor wafer manufacturing process. CMP uses a combination of chemical etching and mechanical removal to polish the wafer surface, aiming to achieve global planarization of the wafer surface.
[0003] With advancements in CMP process nodes, the requirements for CMP grinding uniformity are becoming increasingly stringent. The most direct method to improve CMP grinding uniformity is by adjusting the downward pressure applied to the wafer. However, the wafer edge region is affected by consumables and inherent equipment defects, and in most cases, adjusting the pressure cannot overcome the poor grinding rate uniformity at the wafer edge, resulting in low wafer edge grinding uniformity. For example, due to the flexible material of the grinding pad, it is squeezed by the wafer during grinding, forming wavy patterns at the wafer edge. This leads to poor surface flatness of the grinding pad in the corresponding wafer edge area. At the peaks of the wavy patterns, the interaction force between the grinding pad and the wafer is large, resulting in a high grinding rate; at the valleys, the interaction force is small, resulting in a low grinding rate. Utility Model Content
[0004] The purpose of this invention is to provide a polishing pad, a polishing disc, and a chemical mechanical polishing apparatus, wherein the polishing pad can improve the polishing uniformity of the wafer edge region.
[0005] To achieve the above objectives, the technical solution adopted by this utility model is as follows: The first aspect of this utility model provides an abrasive pad, including a polishing layer;
[0006] The first support layer includes a first surface facing the polished layer and a second surface facing away from the polished layer, the second support layer includes a third surface facing the polished layer and a fourth surface facing away from the polished layer, the first support layer has a plurality of first holes distributed thereon, and the second support layer has a plurality of second holes distributed thereon.
[0007] The first hole is a closed hole, and the second hole is a through hole, penetrating the third surface or the fourth surface; or, the first hole is a through hole, penetrating the first surface or the second surface, and the second hole is a closed hole.
[0008] In one embodiment, a first adhesive layer is provided between the polished layer and the first support, and a second adhesive layer is provided between the first support layer and the second support layer.
[0009] In one embodiment, the first holes are uniformly distributed on the first support layer, and the second holes are uniformly distributed on the second support layer.
[0010] In one embodiment, the first support layer and the second support layer have the same thickness; the first adhesive layer and the second adhesive layer have the same thickness.
[0011] In one embodiment, the first hole is a through hole that penetrates the first surface, the aspect ratio of the first hole is greater than 1.5, and the height of the first hole is greater than 70% of the thickness of the first support layer.
[0012] In one embodiment, the second hole is a closed hole, the second hole has a spherical structure, and the aspect ratio of the second hole is close to 1.
[0013] In one embodiment, the second hole is a through hole that penetrates the third surface, the aspect ratio of the second hole is greater than 1.5, and the height of the second hole is greater than 70% of the thickness of the second support layer.
[0014] In one embodiment, the first hole is a closed hole, the first hole has a spherical structure, and the aspect ratio of the first hole is close to 1.
[0015] The second aspect of this utility model provides a grinding disc, on which a grinding pad is provided, and the grinding pad is the grinding pad described above.
[0016] The third aspect of this utility model provides a chemical mechanical grinding apparatus, including a grinding disc, wherein the grinding disc is the grinding disc described above.
[0017] The polishing pad provided by this utility model includes a polishing layer, a first support layer, and a second support layer stacked sequentially. The first support layer includes a first surface facing the polishing layer and a second surface facing away from the polishing layer. The second support layer includes a third surface facing the polishing layer and a fourth surface facing away from the polishing layer. Multiple first holes are distributed on the first support layer, and multiple second holes are distributed on the second support layer. The first holes are closed holes, and the second holes are through holes, penetrating either the third or fourth surface. Alternatively, the first holes are through holes, penetrating either the first or second surface, and the second holes are closed holes. The polishing pad of this embodiment combines the advantages of a small horizontal influence area at the wafer edge and a near-linear relationship between polishing pressure and polishing rate during wafer polishing, thus improving the polishing uniformity of the wafer edge region. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0019] Figure 1 A schematic diagram of the structure of the abrasive pad provided in an embodiment of this utility model;
[0020] Figure 2 A schematic diagram of the structure of the closed hole on the first or second support layer provided in the embodiment of this utility model;
[0021] Figure 3 This is a schematic diagram of the through hole in the first or second support layer provided in an embodiment of the present utility model.
[0022] Figure 4 a is a schematic diagram of the structure of a polishing pad with only the first support layer being squeezed by the wafer during the polishing process;
[0023] Figure 4 b is a schematic diagram of the structure of a polishing pad with only a second support layer being squeezed by the wafer during the polishing process;
[0024] Figure 5 The wafer edge grinding rate curve provided in this embodiment of the utility model is as follows: the blue curve is the wafer edge grinding rate curve obtained by using only the first support layer with closed holes for the grinding pad, the green curve is the wafer edge grinding rate curve obtained by using only the second support layer with through holes for the grinding pad, and the red curve is the wafer edge grinding rate curve obtained by fitting the blue curve and the green curve.
[0025] The following are the labeling elements in the figure:
[0026] 1-Abrasive pad; 11-Polishing layer; 12-First support layer; 13-Second support layer; 14-First adhesive layer; 15-Second adhesive layer. Detailed Implementation
[0027] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0028] In the description of this utility model, it should be understood that the terms "comprising" and "having" as used herein, and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.
[0029] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. It should be understood that the term "and / or" as used herein is merely a description of the relationship between related objects, indicating that three relationships may exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. In the description of this utility model, unless otherwise stated, "multiple" means two or more.
[0031] With advancements in CMP process nodes, the requirements for CMP grinding uniformity are becoming increasingly stringent. The most direct method to achieve CMP grinding uniformity is through pressure adjustment. However, the wafer edge region is affected by consumables and inherent equipment defects, making it difficult to overcome poor grinding rate uniformity through pressure adjustment in most cases. CMP grinding pads are made of flexible materials. During grinding, the pads are squeezed by the wafer, forming wavy patterns at the wafer edge. This results in poor surface flatness of the pads in the corresponding wafer edge area. At the peaks of the wavy patterns, the interaction force between the pads and the wafer is high, leading to a high grinding rate; at the valleys, the interaction force is low, resulting in a low grinding rate. For example, the support layer of existing grinding pads is generally a single layer, with the following main structural types: The first type has openings penetrating the upper and lower surfaces of the support layer. Because these openings are generally vertical, after pressure adjustment during grinding, the pressure response is sensitive at low pressures, but becomes rigid as the pressure increases. This results in a poor linear relationship between pressure and grinding rate, and a small pressure adjustment range. The second type of support layer has closed holes that do not penetrate the upper and lower surfaces of the support layer. During the grinding process, after pressure adjustment, the pressure and grinding rate tend to have a linear relationship, and the pressure adjustment range is large. However, the horizontal influence area of the grinding pad is relatively large after pressure adjustment. Based on the above reasons, this application provides a grinding pad, a grinding disc, and a chemical mechanical grinding apparatus.
[0032] The grinding pad, grinding disc, and chemical mechanical grinding device provided by this utility model will be described in detail below with reference to specific embodiments.
[0033] Figure 1 This is a schematic diagram of the structure of the grinding pad provided in an embodiment of the present invention. Figure 2 This is a schematic diagram of the structure of a closed hole on the first or second support layer provided in an embodiment of the present invention. Figure 3 For a structural schematic diagram of the through hole in the first or second support layer provided in the embodiment of this utility model, please refer to [link / reference]. Figures 1-3 The first aspect of this embodiment provides an abrasive pad 1, which includes a polishing layer 11, a first support layer 12 and a second support layer 13 stacked sequentially.
[0034] The first support layer 12 includes a first surface facing the polishing layer 11 and a second surface away from the polishing layer 11, and the second support layer 13 includes a third surface facing the polishing layer 11 and a fourth surface away from the polishing layer 11. The first support layer 12 has a plurality of first holes distributed thereon, and the second support layer 13 has a plurality of second holes distributed thereon.
[0035] The first hole is a closed hole, and the second hole is a through hole, penetrating the third or fourth surface; or, the first hole is a through hole, penetrating the first or second surface, and the second hole is a closed hole.
[0036] Specifically, the main material of the polishing layer 11 in this embodiment is typically polyurethane or foamed polyurethane. Depending on the application requirements, other reinforcing materials, such as zirconium oxide, diamond, and silicon carbide, may be added to improve wear resistance and polishing efficiency. Foamed polyurethane has a porous structure, which helps in the uniform distribution of the polishing slurry and is suitable for polishing semiconductor wafers with high planarization requirements. This embodiment does not impose special limitations on the specific size of the polishing layer; it must match the wafer size (e.g., 8-inch, 12-inch) and equipment requirements. For example, a polishing layer specifically for 12-inch wafers typically has a diameter of 760mm to 920mm. This embodiment does not impose special limitations on the thickness of the polishing layer; for example, the thickness of the polishing layer is 0.45mm to 1.5mm. The surface of the polishing layer 11 generally has a groove design, such as square grooves or spiral grooves, to optimize the distribution of the polishing slurry and reduce polishing residue.
[0037] The support layer of the polishing pad 1 in this embodiment includes a first support layer 12 and a second support layer 13. The support layer is one of the core components of the CMP polishing pad, located below the polishing layer. Its main functions are to optimize pressure distribution, improve polishing uniformity, and enhance mechanical stability. Its structure, material, and design directly affect the polishing rate, wafer edge uniformity, and lifespan of the polishing layer in the CMP process. In this embodiment, the first support layer 12 includes a first surface facing the polishing layer 11 and a second surface away from the polishing layer. The second support layer 13 includes a third surface facing the polishing layer 11 and a fourth surface away from the polishing layer. The first support layer 12 has a plurality of first holes distributed on it, and the second support layer 13 has a plurality of second holes distributed on it. The first holes are closed holes, and the second holes are through holes. In this embodiment, the first holes on the first support layer 12 do not penetrate the first and second surfaces of the first support layer 12, while the second holes on the second support layer 13 penetrate the third or fourth surface of the second support layer 13. Alternatively, the first hole is a through hole and the second hole is a closed hole, that is, the first hole penetrates the first or second surface of the first support layer 12, and the second hole does not penetrate the third or fourth surface of the second support layer 13.
[0038] The support layer of existing grinding pads 1 is generally a single-layer structure, and its structure mainly includes the following types: First, the support layer has openings that penetrate the upper or lower surface. Because the openings are generally vertical holes, after pressure adjustment during the grinding process, the pressure response is sensitive at low pressures, but the support layer becomes rigid as the pressure increases. The linear relationship between pressure and grinding rate is poor, and the pressure adjustment range is small. Second, the support layer has closed holes that do not penetrate the upper or lower surface of the support layer. After pressure adjustment during the grinding process, the pressure and grinding rate tend to have a linear relationship, and the pressure adjustment range is large. However, after pressure adjustment, the horizontal influence area of the grinding pad is relatively large.
[0039] The polishing pad 1 in this embodiment includes a polishing layer 11, a first support layer 12, and a second support layer 13 stacked sequentially. Taking a first hole on the first support layer 12 as a closed hole and a second hole on the second support layer 13 as a through hole as an example, the pressure point of the polishing pad 1 during wafer polishing is A. After the first support layer 12 and the second support layer 13 are pressed at point A, because the distances of the deformed peaks and valleys from point A are different, the peaks and valleys will cancel each other out. The neutralized peaks and valleys will be smaller than those of a polishing pad using only the first support layer 12 and larger than those of a polishing pad using only the second support layer 13. For example... Figure 5 The blue curve represents the wafer edge polishing rate curve obtained when the polishing pad only uses the first support layer with closed vias, and the green curve represents the wafer edge polishing rate curve obtained when the polishing pad only uses the second support layer with through-holes. Figure 5 It can be seen that when the polishing pad only uses the first support layer with closed holes, the peak is at 143 mm and the valley is at 146 mm. When the polishing pad only uses the second support layer with through holes, the peak is at 145 mm and the valley is at 147 mm. In terms of the linear relationship between pressure and polishing rate, the polishing pad 1 used in combination is better than the polishing pad using the second support layer 13 alone, but worse than the polishing pad using the first support layer 12 alone. The polishing pad 1 in this embodiment can have the advantages of a small horizontal influence area at the wafer edge and a near-linear relationship between pressure and polishing rate during the polishing process, thus improving the polishing uniformity of the wafer edge region. Similarly, in other embodiments, polishing pads where the first hole on the first support layer 12 is a through hole and the second hole on the second support layer 13 is a closed hole can also achieve the effect of high polishing uniformity of the wafer edge region. The principle is the same as that of the polishing pad where the first hole on the first support layer 12 is a closed hole and the second hole on the second support layer 13 is a through hole.
[0040] Figure 4 a is a schematic diagram of the structure of a polishing pad with only the first support layer being squeezed by the wafer during the polishing process. Figure 4 b is a schematic diagram of the structure of a polishing pad with only a second support layer being squeezed by the wafer during the polishing process. Figure 5Please refer to the wafer edge grinding rate curve provided for the embodiments of this utility model. Figure 4 a, Figure 4 b、 Figure 5 As shown, the horizontal axis represents the distance from the grinding point to the wafer center, and the vertical axis represents the grinding rate. The diameter of the wafer being ground is 300 mm. The blue curve represents the wafer edge grinding rate obtained when the grinding pad uses only a first support layer with closed vias, and the green curve represents the wafer edge grinding rate obtained when the grinding pad uses only a second support layer with through-holes. The red curve is the wafer edge grinding rate obtained by fitting the blue and green curves, and it closely approximates the wafer edge grinding rate obtained when the grinding pad uses both the first and second support layers. The green curve shows that the spacing between the peaks and troughs is 2mm (147mm-145mm), and the difference in grinding rate between the peaks and troughs is 0.10 (1.01-0.91). The blue curve shows that the spacing between the peaks and troughs is 3mm (146mm-143mm), and the difference in grinding rate between the peaks and troughs is 0.14 (1.07-0.93). The spacing between the peaks and troughs and the difference in grinding rate between the peaks and troughs correspond to the area of influence on the horizontal direction of the wafer during the grinding pressure process. When the grinding pad 1 only uses the first support layer 12 with closed holes as the support layer, the area of influence on the horizontal direction of the wafer is large after the pressure is adjusted. The grinding pad using both the first and second support layers improves the area of influence on the horizontal direction of the wafer during the grinding process compared to the grinding pad using only the first support layer 12 as the support layer.
[0041] Table 1 compares the non-uniformity of grinding uniformity using a grinding pad with both a first and a second support layer with that of a grinding pad using only the first support layer and a grinding pad using only the second support layer. Table 1 shows that the non-uniformity of grinding uniformity using a grinding pad with both a first and a second support layer is superior to that of a grinding pad using only the first support layer and a grinding pad using only the second support layer.
[0042]
[0043] Table 1
[0044] In this embodiment, the first support layer 12 of the polishing pad 1 has multiple first holes distributed on it. These first holes are closed holes. Because the pressure response of closed holes is mild, the pressure and polishing rate have a near-linear relationship, resulting in a large pressure adjustment range for the polishing pad 1. The second support layer 13 of the polishing pad in this embodiment has multiple second holes distributed on it. These second holes are through holes. Because the second holes are through holes, the horizontal influence area of the polishing pad is small after pressure adjustment during polishing, resulting in more precise pressure adjustment. However, under high pressure, it exhibits rigidity, and the linear relationship between pressure and polishing rate is poor, leading to a small pressure adjustment range. The polishing pad 1 in this embodiment includes a stacked first support layer 12 and a second support layer 13, which, during the polishing process, combines the advantages of a small horizontal influence area at the wafer edge and a near-linear relationship between pressure and polishing rate during pressure adjustment.
[0045] The polishing pad of this embodiment includes a polishing layer, a first support layer, and a second support layer stacked sequentially. The first support layer includes a first surface facing the polishing layer and a second surface facing away from the polishing layer. The second support layer includes a third surface facing the polishing layer and a fourth surface facing away from the polishing layer. Multiple first holes are distributed on the first support layer, and multiple second holes are distributed on the second support layer. The first holes are closed holes, and the second holes are through holes, penetrating either the third or fourth surface. Alternatively, the first holes are through holes, penetrating either the first or second surface, and the second holes are closed holes. The polishing pad of this embodiment combines the advantages of a small horizontal influence area at the wafer edge and a near-linear relationship between polishing pressure and polishing rate during wafer polishing, thus improving the polishing uniformity of the wafer edge region.
[0046] Furthermore, a first adhesive layer 14 is provided between the polishing layer 11 and the first support layer 12, and a second adhesive layer 15 is provided between the first support layer 12 and the second support layer 13. Because the polishing pad 1 in this embodiment rotates at high speed during the polishing process, both the first adhesive layer 14 and the second adhesive layer 15 are high-strength adhesive layers. This embodiment does not impose any particular limitation on the specific materials of the first adhesive layer 14 and the second adhesive layer 15; for example, the first adhesive layer 14 and the second adhesive layer 15 can be double-sided adhesive. Exemplarily, the thickness of the first adhesive layer 14 and the second adhesive layer 15 in this embodiment is 20~100μm. If the thickness of the first adhesive layer 14 and the second adhesive layer 15 is too thin, it will easily lead to insufficient adhesion; if it is too thick, it will reduce pressure sensitivity.
[0047] In this embodiment, the first and second support layers have the same thickness; the first and second adhesive layers also have the same thickness. This symmetrical thickness of the first support layer, first adhesive layer, second support layer, and second adhesive layer ensures more uniform pressure transmission during the polishing process, preventing excessive local stress that could lead to delamination or deformation of the polishing pad. The uniform stress distribution reduces the stress gradient at the wafer edge during polishing, minimizing the risk of microcracks. The symmetrical structure of the first support layer, first adhesive layer, second support layer, and second adhesive layer can counteract unbalanced vibrations during high-speed rotation, improving the stability of the polishing process. Furthermore, the symmetrical structure ensures consistent wear rates across all areas of the polishing pad, extending its overall lifespan and reducing the costs associated with frequent pad replacements.
[0048] In one specific embodiment, the first holes are uniformly distributed on the first support layer 12, and the second holes are uniformly distributed on the second support layer 13. This embodiment's uniform distribution of the first holes on the first support layer 12 and the second holes on the second support layer 13 prevents localized stress concentration in the first and second support layers 12 and 13 due to uneven density of the first and second holes.
[0049] In one specific embodiment, the first hole on the first support layer 12 is a through hole, penetrating the first surface of the first support layer 12. The aspect ratio of the first hole is greater than 1.5, and the height of the first hole is greater than 70% of the thickness of the first support layer 12. In this embodiment, the height direction of the first hole is the thickness direction of the first support layer 12. The second hole on the second support layer 13 is a closed hole with a near-spherical structure. The aspect ratio of the second hole is close to 1, and the height direction of the second hole is the thickness direction of the second support layer 13. The near-spherical object has a shape close to a sphere. The abrasive pad in this embodiment can achieve a good shock absorption effect.
[0050] In one specific embodiment, the second hole is a through hole that penetrates the third surface. The aspect ratio of the second hole is greater than 1.5, and the height of the second hole is greater than 70% of the thickness of the second support layer 13. The first hole on the first support layer 12 is a closed hole with a near-spherical structure and an aspect ratio close to 1. The abrasive pad in this embodiment can achieve a good shock absorption effect.
[0051] The polishing pad of this invention includes a polishing layer, a first support layer, and a second support layer stacked sequentially. The first support layer includes a first surface facing the polishing layer and a second surface facing away from the polishing layer. The second support layer includes a third surface facing the polishing layer and a fourth surface facing away from the polishing layer. The first support layer has a plurality of first holes distributed on it, and the second support layer has a plurality of second holes distributed on it. The first holes are closed holes, and the second holes are through holes, penetrating either the third or fourth surface. Alternatively, the first holes are through holes, penetrating either the first or second surface, and the second holes are closed holes. The polishing pad of this embodiment combines the advantages of a small horizontal influence area at the wafer edge and a near-linear relationship between polishing pressure and polishing rate during wafer polishing, thus improving the polishing uniformity of the wafer edge region.
[0052] The second aspect of this embodiment provides a grinding disc; please refer to [link to relevant documentation]. Figure 1-3 The grinding disc is provided with a grinding pad 1 as described in the above embodiment. For example, the grinding pad 1 includes a polishing layer 11, a first support layer 12 and a second support layer 13 stacked in sequence.
[0053] The first support layer 12 includes a first surface facing the polishing layer 11 and a second surface away from the polishing layer 11, and the second support layer 13 includes a third surface facing the polishing layer 11 and a fourth surface away from the polishing layer 11. The first support layer 12 has a plurality of first holes distributed thereon, and the second support layer 13 has a plurality of second holes distributed thereon.
[0054] The first hole is a closed hole, and the second hole is a through hole, penetrating the third or fourth surface; or, the first hole is a through hole, penetrating the first or second surface, and the second hole is a closed hole.
[0055] In this embodiment, the grinding pad of the grinding disk can combine the advantages of a small horizontal influence area on the wafer edge and a near-linear relationship between pressure and grinding rate during the wafer grinding process, thereby improving the grinding uniformity of the wafer edge area.
[0056] A third aspect of this embodiment provides a chemical mechanical grinding apparatus, including a grinding disc as described in the above embodiment, wherein the grinding disc is the grinding disc as described in the above embodiment.
[0057] For example, an abrasive pad includes a polishing layer, a first support layer, and a second support layer stacked sequentially.
[0058] The first support layer includes a first surface facing the polished layer and a second surface away from the polished layer, the second support layer includes a third surface facing the polished layer and a fourth surface away from the polished layer, the first support layer has a plurality of first holes distributed thereon, and the second support layer has a plurality of second holes distributed thereon.
[0059] The first hole is a closed hole, and the second hole is a through hole, penetrating the third or fourth surface; or, the first hole is a through hole, penetrating the first or second surface, and the second hole is a closed hole.
[0060] The grinding pad of the chemical mechanical polishing apparatus in this embodiment includes the above-mentioned grinding pad. During the wafer polishing process, the grinding pad can have the advantages of a small horizontal influence area on the wafer edge during the voltage adjustment process and a near-linear relationship between pressure and polishing rate, thereby improving the polishing uniformity of the wafer edge area.
[0061] In the above description, the terms "an embodiment," "some embodiments," "example," "specific example," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0062] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.
Claims
1. An abrasive pad, characterized in that: It includes a polishing layer, a first support layer, and a second support layer stacked sequentially; The first support layer includes a first surface facing the polished layer and a second surface facing away from the polished layer, the second support layer includes a third surface facing the polished layer and a fourth surface facing away from the polished layer, the first support layer has a plurality of first holes distributed thereon, and the second support layer has a plurality of second holes distributed thereon. The first hole is a closed hole, and the second hole is a through hole, penetrating the third surface or the fourth surface; or, the first hole is a through hole, penetrating the first surface or the second surface, and the second hole is a closed hole.
2. The abrasive pad according to claim 1, characterized in that: A first adhesive layer is provided between the polished layer and the first support, and a second adhesive layer is provided between the first support layer and the second support layer.
3. The abrasive pad according to claim 2, characterized in that: The first hole is evenly distributed on the first support layer, and the second hole is evenly distributed on the second support layer.
4. The abrasive pad according to claim 3, characterized in that: The first support layer and the second support layer have the same thickness; the first adhesive layer and the second adhesive layer have the same thickness.
5. The abrasive pad according to claim 1, characterized in that: The first hole is a through hole that penetrates the first surface. The aspect ratio of the first hole is greater than 1.5, and the height of the first hole is greater than 70% of the thickness of the first support layer.
6. The abrasive pad according to claim 5, characterized in that: The second hole is a closed hole, the second hole has a spherical structure, and the aspect ratio of the second hole is close to 1.
7. The abrasive pad according to claim 1, characterized in that: The second hole is a through hole that penetrates the third surface. The aspect ratio of the second hole is greater than 1.5, and the height of the second hole is greater than 70% of the thickness of the second support layer.
8. The abrasive pad according to claim 7, characterized in that: The first hole is a closed hole, the first hole has a spherical structure, and the aspect ratio of the first hole is close to 1.
9. A grinding disc, characterized in that: The grinding disc is provided with a grinding pad, which is the grinding pad according to any one of claims 1-8.
10. A chemical mechanical grinding apparatus, characterized in that: Includes a grinding disc, wherein the grinding disc is the grinding disc as described in claim 9.