Uncooled infrared detection pixel, chip, movement and device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- BEIJING NORTH GAOYE TECH CO LTD
- Filing Date
- 2025-06-23
- Publication Date
- 2026-06-23
Smart Images
Figure CN224398813U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of infrared detection technology, and in particular to an uncooled infrared detection pixel, chip, mechanism, and device. Background Technology
[0002] Infrared detection is a technology that uses the infrared radiation emitted or reflected by objects to detect, identify, and locate them. Uncooled infrared detection equipment is a device that uses the infrared radiation characteristics of objects for detection and can operate without a cooling system. Specifically, uncooled infrared detection equipment mainly works based on the principle of thermal effect. When an infrared signal shines on the sensitive element of the detector, such as a detection chip, the detection chip changes its own physical parameters based on the infrared signal, converts it into an electrical signal, and then reads it out through circuitry and performs subsequent processing to ultimately detect and image the infrared signal.
[0003] In related technologies, infrared detection pixels often employ a hollow columnar structure of single-layer metal as the interconnect structure to connect the readout circuit and the infrared sensing structure, achieving both electrical connection and mechanical support. A single-layer metal interconnect structure (such as patent CN202110138398.5) is shown below. Figure 15 The microbridge pillar 7 shown is formed by etching through-holes in the sacrificial layer 9 and then filling them with a metal layer 4 to create a hollow pillar structure. The defects of this process include:
[0004] 1) Through-holes formed by etching may have residual media due to incomplete removal during the etching, resist removal, and cleaning processes (e.g.) Figure 15 The outer side of the dielectric layer 3 and the sacrificial layer 9 at the location of the micro-bridge pillar 7 and the bottom of the reflective layer are in contact, and the residual condition of each via is not the same, making it difficult to ensure process consistency; at the same time, the temporarily retained particles will have a great impact on the noise of the pixel, so it will lead to unstable pixel noise. Pixels with relatively clean residual particles will have low noise, while pixels with incomplete residual particle removal will have high noise, so the noise consistency between pixels will be poor.
[0005] 2) The metal layer 4 inside the through hole has poor coverage, which may lead to the risk of electrical connection breakage; and the step coverage will vary, resulting in poor process consistency and resistance consistency.
[0006] 3) Through-hole processing requires two photolithography etching steps to form ( Figure 15At the bottom of the contact between the dielectric layer 3 and the metal layer 4 at the position of the micro-bridge pillar 7 and the reflective layer, the two via processes have high requirements for photolithography overlay and there is a risk of large overlay deviation. The resulting two vias have inconsistent positions and sizes, different areas and shapes of filling metal, and different interface characteristics with the readout circuit, resulting in poor consistency of contact resistance. Moreover, the two via processes mean that the size of the interconnect structure will inevitably not be too small, making it difficult to design small-sized pixels.
[0007] 4) Hollow columnar structure ( Figure 15 The design of the micro-bridge pillar 7) will result in an uneven surface during the fabrication process. Strict process control is required in the series of processes such as film growth, coating, photolithography, etching and cleaning. The process requirements are quite stringent.
[0008] 5) For infrared detector pixels with multi-layer structures, i.e., beam structures and absorption sensing parts with different or multiple layers of beam structures and absorption sensing parts, chemical mechanical polishing (CMP) is used to make the surface flat. However, in the design of hollow columnar structures, the hollow structure makes CMP more difficult and the surface flatness varies.
[0009] 6) Currently, the sacrificial layer 9 of traditional hollow columnar interconnect structures all adopt polyimide (PI) technology. The planarization process is not mature, making it difficult to accurately control the thickness of the sacrificial layer, which may deviate from the design requirements.
[0010] 7) There will be differences between the individual pixels made of hollow columnar structure, resulting in poor consistency of the entire infrared detection chip and greatly affecting the detection performance; at the same time, there will be differences between each chip and each wafer produced in batches, making it difficult to guarantee process stability and repeatability, and making it difficult to achieve large-scale mass production.
[0011] 8) Chips made from hollow columnar structures have a low yield and high processing costs. Utility Model Content
[0012] In order to solve the above-mentioned technical problems, or at least partially solve the above-mentioned technical problems, this disclosure provides an uncooled infrared detection pixel, chip, mechanism, and device.
[0013] This disclosure provides an uncooled infrared detection pixel, including a first interconnection structure and a second interconnection structure, wherein the first interconnection structure connects the second interconnection structure and a readout circuit;
[0014] The first interconnection structure includes: a first connecting part, a first copper connecting part, a second copper connecting part, and a beam structure; the second interconnection structure includes a third copper connecting part, a fourth copper connecting part, a fifth copper connecting part, and an absorption sensing part.
[0015] In the first interconnection structure, the two ends of the first copper connection are respectively connected to the first connection and the second copper connection, the first connection is connected to the readout circuit, and the second copper connection is connected to the beam structure;
[0016] In the second interconnection structure, the two ends of the fourth copper connection are respectively connected to the third copper connection and the fifth copper connection. The third copper connection is connected to the beam structure, and the fifth copper connection is connected to the absorption sensing part.
[0017] At least the second copper connection portion and the third copper connection portion are located on the side of the beam structure facing the readout circuit, and the beam structure is on a flat plane.
[0018] This disclosure also provides an uncooled infrared detection chip, including an array structure composed of multiple uncooled infrared detector pixels as described above and a readout circuit.
[0019] This disclosure also provides an uncooled infrared detection mechanism, which includes any of the above-mentioned uncooled infrared detection chips; the mechanism also includes a lens for focusing infrared signals onto the uncooled infrared detection chip.
[0020] This disclosure also provides an uncooled infrared detection device, which includes any of the aforementioned mechanisms.
[0021] The technical solution provided in this disclosure has the following advantages compared with the prior art:
[0022] In the uncooled infrared detection pixel, chip, core, and device provided in this disclosure, the uncooled infrared detection pixel includes a first interconnect structure and a second interconnect structure. The first interconnect structure connects the second interconnect structure and the readout circuit. The first interconnect structure includes a first connecting portion, a first copper connecting portion, a second copper connecting portion, and a beam structure. The second interconnect structure includes a third copper connecting portion, a fourth copper connecting portion, a fifth copper connecting portion, and an absorption sensing portion. In the first interconnect structure, the two ends of the first copper connecting portion are respectively connected to the first connecting portion and the second copper connecting portion. The first connecting portion is connected to the readout circuit, and the second copper connecting portion is connected to the beam structure. In the second interconnect structure, the two ends of the fourth copper connecting portion are respectively connected to the third copper connecting portion and the fifth copper connecting portion. The third copper connecting portion is connected to the beam structure, and the fifth copper connecting portion is connected to the absorption sensing portion. At least the second copper connecting portion and the third copper connecting portion are located on the side of the beam structure facing the readout circuit, and the beam structure is on a flat plane. Therefore, by setting the aforementioned first and second interconnection structures, the connection between the readout circuit and the absorption sensing unit is achieved. Compared with the traditional hollow columnar structure with a single layer of metal as the interconnection, the fabrication process of the interconnection structure in the uncooled infrared detection pixel provided in this disclosure is mature, with good process stability, no noise instability caused by residual particles, and good noise consistency. At the same time, it avoids the problem of poor electrical contact caused by high steps, resulting in low contact resistance and good uniformity. In addition, the planarization process is mature and stable, perfectly meeting design requirements. Furthermore, the interconnection structure size can be made very small, enabling smaller pixel designs. Moreover, in the infrared detection chip formed by the infrared detection pixel including this interconnection structure, the consistency between different pixels is good, and the performance is stable. In addition, the interconnection process enables efficient and low-cost production, so the infrared detection chip can achieve the goal of low processing cost, high yield, and mass production. Attached Figure Description
[0023] The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure.
[0024] To more clearly illustrate the technical solutions in the embodiments of this disclosure or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0025] Figure 1 This is a schematic diagram of the structure of an uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0026] Figure 2 This is a schematic diagram of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0027] Figure 3 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0028] Figure 4 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0029] Figure 5 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0030] Figure 6 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0031] Figure 7 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0032] Figure 8 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0033] Figure 9 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0034] Figure 10 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0035] Figure 11 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0036] Figure 12 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of the present disclosure;
[0037] Figure 13 This is a schematic diagram of the structure of an uncooled infrared detection chip provided in an embodiment of the present disclosure;
[0038] Figure 14 This is a schematic diagram of the structure of an uncooled infrared detector core provided in an embodiment of the present disclosure;
[0039] Figure 15 A schematic diagram of the structure of an infrared detection pixel is provided for related technologies. Detailed Implementation
[0040] To better understand the above-mentioned objectives, features, and advantages of this disclosure, the solutions disclosed herein will be further described below. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.
[0041] Numerous specific details are set forth in the following description in order to provide a full understanding of this disclosure, but this disclosure may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some, and not all, of the embodiments of this disclosure.
[0042] Figure 1 This is a schematic diagram of the structure of an uncooled infrared detector pixel provided in an embodiment of the present disclosure, illustrating a film structure of the uncooled infrared detector pixel. (Reference) Figure 1 The uncooled infrared detector pixel 10 may include a first interconnection structure 11 and a second interconnection structure 12, wherein the first interconnection structure 11 connects the second interconnection structure 12 and the readout circuit 100. Specifically, the first interconnection structure 11 connects the second interconnection structure 12 and the readout circuit 100, and based on this connection, the first interconnection structure 11 enables electrical signal transmission between the second interconnection structure 12 and the readout circuit 100.
[0043] The first interconnection structure 11 includes a first connecting part 111, a first copper connecting part 112, a second copper connecting part 113, and a beam structure 114. In the first interconnection structure 11, the two ends of the first copper connecting part 112 are respectively connected to the first connecting part 111 and the second copper connecting part 113. The first connecting part 111 is connected to the readout circuit 100, and the second copper connecting part 113 is connected to the beam structure 114. The second interconnection structure 12 includes a third copper connecting part 121, a fourth copper connecting part 122, a fifth copper connecting part 123, and an absorption sensing part 124. In the second interconnection structure 12, the two ends of the fourth copper connecting part 122 are respectively connected to the third copper connecting part 121 and the fifth copper connecting part 123. The third copper connecting part 121 is connected to the beam structure 114, and the fifth copper connecting part 123 is connected to the absorption sensing part 124. In this context, the first interconnection structure 11 and the second interconnection structure 12 can both be referred to as interconnection structures, and the first copper connection portion 112, the second copper connection portion 113, the third copper connection portion 121, the fourth copper connection portion 122 and the fifth copper connection portion 123 can all be referred to as copper connection portions.
[0044] Specifically, taking the connection path between the readout circuit 100 and the absorption sensing unit 124 as an example, the readout circuit 100 is connected to the first connection part 111, the first connection part 111 is connected to the first copper connection part 112, the first copper connection part 112 is connected to the second copper connection part 113, the second copper connection part 113 is connected to the beam structure 114, the beam structure 114 is connected to the third copper connection part 121, the third copper connection part 121 is connected to the fourth copper connection part 122, the fourth copper connection part 122 is connected to the fifth copper connection part 123, and the fifth copper connection part 123 is connected to the absorption sensing unit 124. In this way, the connection between the absorption sensing unit 124 and the readout circuit 100 is realized. This connection includes electrical connection and mechanical connection, which are not limited here, but will be described by example later.
[0045] Specifically, the first interconnection structure 11 includes a first connecting portion 111 and a second copper connecting portion 113 disposed opposite to each other, a first copper connecting portion 112 disposed between the first connecting portion 111 and the second copper connecting portion 113, and a beam structure 114 disposed on the side of the second copper connecting portion 113 away from the first connecting portion 111.
[0046] For example, in the first interconnect structure 11, along the direction away from the readout circuit 100, reference Figure 1 The direction shown in the image is from bottom to top. Figure 1 (As shown to Z by a third party), the first connecting part 111, the first copper connecting part 112, the second copper connecting part 113 and the beam structure 114 are stacked and connected in sequence, and the first connecting part 111 located on the lower layer is connected to the readout circuit 100, and the beam structure 114 located on the upper layer is connected to the second interconnection structure 12, so as to realize the electrical signal transmission between the second interconnection structure 12 and the readout circuit 100 based on the first interconnection structure 11.
[0047] Specifically, the second interconnection structure 12 includes a third copper connection portion 121 and a fifth copper connection portion 123 disposed opposite to each other, a fourth copper connection portion 122 disposed between the third copper connection portion 121 and the fifth copper connection portion 123, and an absorption sensing portion 124 disposed on the side of the fifth copper connection portion 123 away from the third copper connection portion 121.
[0048] For example, in the second interconnect structure 12, along the direction away from the readout circuit 100, reference Figure 1 The direction shown in the image is from bottom to top. Figure 1 (As shown to Z by a third party), the third copper connection 121, the fourth copper connection 122, the fifth copper connection 123 and the absorption sensing part 124 are stacked and connected in sequence, and the third copper connection 121 located at the bottom layer is connected to the first interconnection structure 11, specifically connected to the beam structure 114 in the first interconnection structure 11, so as to transmit electrical signals to the readout circuit 100 through the first interconnection structure 11 including the beam structure 114.
[0049] Specifically, the absorption sensing unit 124 converts the infrared signal into an electrical signal. This electrical signal is transmitted to the readout circuit 100 via a series of sequentially connected copper connectors: a fifth copper connector 123, a fourth copper connector 122, a third copper connector 121, a beam structure 114, a second copper connector 113, a first copper connector 112, and a first connector 111. The readout circuit 100 receives the electrical signal. The readout circuit 100 can reflect the temperature information of the corresponding infrared signal based on the received electrical signal, thus realizing the temperature detection function of the infrared detection device.
[0050] At least the second copper connection portion 113 and the third copper connection portion 121 are located on the side of the beam structure 114 facing the readout circuit 100, and the beam structure 114 is on a flat plane.
[0051] For example, with Figure 1 Taking the uncooled infrared detector pixel 10 as an example, the second copper connection 113 and the third copper connection 121 are both located on the side of the beam structure 114 facing the readout circuit 100, and are both connected to the beam structure 114, which is on a flat plane.
[0052] In the embodiments of this application, the uncooled infrared detector pixel 10 has a simple structure. By setting the first interconnection structure 11 and the second interconnection structure 12, the connection between the readout circuit 100 and the absorption sensing part 124 is realized. Compared with the traditional hollow columnar structure with a single layer of metal as the interconnection, the fabrication process of the interconnection structure in the uncooled infrared detector pixel 10 provided in this embodiment is mature, the process stability is good, there is no noise instability problem caused by residual particles, and the noise consistency is good. At the same time, it avoids the problem of poor electrical contact caused by high steps, the contact resistance is small, and the uniformity is good. In addition, the planarization process is mature and stable, and can perfectly meet the design requirements. Furthermore, the interconnection structure size can be made very small, and smaller pixel designs can be realized. Furthermore, in the infrared detector chip formed by the infrared detector pixel including the interconnection structure, the consistency between different pixels is good and the performance is stable. Moreover, the interconnection process can achieve efficient and low-cost production, so the infrared detector chip can achieve the goal of low processing cost, high yield, and mass production.
[0053] It should be noted that, Figure 1 The illustration only shows, by way of example, that the first copper connection portion 112 in a single first interconnect structure 11 includes one copper pillar, and the fourth copper connection portion 122 in a single second interconnect structure 12 includes one copper pillar, but this does not constitute a limitation on the number of copper pillars in the first copper connection portion 112 and the fourth copper connection portion 122. In other implementations, the number of copper pillars in a single first copper connection portion 112 may be two or more; the number of copper pillars in a single fourth copper connection portion 122 may be two or more; and the number of copper pillars in a single fourth copper connection portion 122 may be equal to or unequal to the number of copper pillars in a single first copper connection portion 112, which is not limited here.
[0054] In some embodiments, Figure 2 This is a schematic diagram of another uncooled infrared detector pixel provided in an embodiment of this disclosure. Figure 1 Based on, refer to Figure 2 In the uncooled infrared detector pixel 10, the first connecting portion 111 includes one of an aluminum layer 11A, an aluminum alloy layer, a copper layer, and a copper alloy layer. Figure 2 Taking aluminum layer 11A as an example (the same applies to aluminum alloy layer), the first connection portion 111 also includes a titanium layer and / or a titanium nitride layer, located on the side of aluminum layer 11A (and / or aluminum alloy layer) facing away from and / or towards the readout circuit. Figure 2 In this configuration, the first connection portion 111 includes an aluminum layer 11A, a titanium layer 11Ti, and a titanium nitride layer 11TiN; wherein the titanium layer Ti is located on the side of the aluminum layer 11A facing away from the readout circuit 100, and the titanium nitride layer 11TiN is located on the side of the aluminum layer 11A facing the readout circuit 100. For example, using... Figure 2 Taking the orientation shown as an example, the aluminum layer 11A is located above the readout circuit 100, the titanium layer 11Ti is located above the aluminum layer 11A, and the titanium nitride layer 11TiN is located below the aluminum layer 11A, specifically between the aluminum layer 11A and the readout circuit 100.
[0055] In this embodiment, the first connecting part 111 may also be referred to as an aluminum connecting part.
[0056] In other embodiments, the aluminum connector may include an aluminum layer and a titanium layer, with the titanium layer located on the side of the aluminum layer facing away from and / or towards the readout circuit; or, the aluminum connector may include an aluminum layer and a titanium nitride layer, with the titanium nitride layer located on the side of the aluminum layer facing away from and / or towards the readout circuit; or, the aluminum connector may include an aluminum layer, a titanium layer, and a titanium nitride layer, with the titanium layer located on the side of the aluminum layer facing away from and / or towards the readout circuit, and the titanium nitride layer located on the side of the aluminum layer facing away from and / or towards the readout circuit. When the titanium layer and the titanium nitride layer are located on the same side of the aluminum layer, the titanium layer is located between the aluminum layer and the titanium nitride layer, or the titanium nitride layer is located between the aluminum layer and the titanium layer, which is not limited here.
[0057] The device further includes at least one titanium layer and one titanium nitride layer located on the side of the aluminum layer facing away from and / or towards the absorption sensing portion, provided that at least one aluminum connection portion is provided. The titanium layer and / or titanium nitride layer can act as a diffusion barrier layer to prevent diffusion between the aluminum layer and the dielectric, thereby improving the stability and reliability of the device. Simultaneously, the titanium layer and / or titanium nitride layer can act as an adhesion layer to increase the adhesion between the aluminum layer and the dielectric and the tungsten structure, preventing film peeling that could affect the process and performance. Furthermore, the titanium layer and / or titanium nitride layer can act as an anti-reflection layer, significantly reducing reflectivity during photolithography to ensure clear edges of the exposed pattern. Additionally, the titanium layer and / or titanium nitride layer can act as an etching barrier layer to prevent corrosion and damage to the aluminum layer during etching and cleaning. Finally, the titanium layer and / or titanium nitride layer can act as a protective layer to protect the aluminum layer surface from external environmental erosion and damage, thereby improving device performance and stability.
[0058] In some embodiments, Figure 3 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure, with reference to... Figure 3In this uncooled infrared detector pixel 10, the first connection portion 111 is the top metal layer of the readout circuit 100, or as a reference. Figure 1 or Figure 2 The first connection portion 111 is a rewiring layer above the readout circuit 100; the same layer structure of the first connection portion 111 serves as a reflective layer for the uncooled infrared detection pixel, and / or at least one metal layer in the readout circuit 100 serves as a reflective layer for the uncooled infrared detection pixel.
[0059] The first connection portion 111 serves as an interface for the readout circuit 100, enabling the transmission of electrical signals to the readout circuit 100. This first connection portion 111 can be configured as the top metal layer of the readout circuit 100, such as... Figure 3 As shown, by utilizing the film layer within the readout circuit 100 as a structure within the first interconnect structure 11, the total number of film layers is reduced, simplifying the overall structure of the uncooled infrared detection pixel 10. Alternatively, the first connection portion 111 can be disposed above the readout circuit 100 (to... Figure 1 or Figure 2 (Taking the orientation shown in the figure as an example), specifically, it is a rewiring metal layer on the readout circuit 100 to reduce the impact on the readout circuit 100 and ensure the stability and accuracy of the electrical signal.
[0060] The same-layer structure of the first connection part 111 can serve as the reflective layer of the uncooled infrared detection pixel 10; the same-layer structure of at least one metal layer in the readout circuit 100 can also serve as the reflective layer of the uncooled infrared detection pixel 10. The reflective layer is used to reflect infrared signals and forms a resonant cavity structure together with the absorption sensing part 124 to improve the infrared absorption characteristics of the uncooled infrared detection pixel 10.
[0061] In some embodiments, continue to refer to Figure 1 , Figure 2 or Figure 3 In the uncooled infrared detection pixel 10, in the first interconnection structure 11, the plane where the first connection part 111 is located is parallel to the plane where the second copper connection part 113 is located, and is perpendicular to the first copper connection part 112.
[0062] In the same first interconnect structure 11, the first connecting portion 111 and the second copper connecting portion 113 are arranged opposite to each other, and their planes are parallel; Figure 1 Taking the shown orientation as an example, it can be understood that the planes containing the first connecting part 111 and the second copper connecting part 113 are both parallel to the plane. Figure 1 The plane containing the first direction X and the second direction Y shown in the figure is perpendicular to the first copper connection 112. That is, the first copper connection 112 is perpendicularly connected between the first connection 111 and the second copper connection 113. This arrangement helps to shorten the transmission path of the electrical signal, improve the response speed, reduce signal attenuation, and improve the signal-to-noise ratio.
[0063] In some embodiments, continue to refer to Figure 1 , Figure 2 or Figure 3 In the uncooled infrared detector pixel 10, in the second interconnection structure 12, the plane where the third copper connection part 121 is located is parallel to the plane where the fifth copper connection part 123 is located, and is perpendicular to the fourth copper connection part 122.
[0064] In the same second interconnection structure 12, the third copper connection portion 121 and the fifth copper connection portion 123 are arranged opposite to each other, and their planes are parallel; Figure 1 Taking the shown orientation as an example, it can be understood that the planes containing the third copper connector 121 and the fifth copper connector 123 are both parallel to the plane shown. Figure 1 The plane containing the first direction X and the second direction Y shown in the figure is perpendicular to the fourth copper connection 122. That is, the fourth copper connection 122 is perpendicularly connected between the third copper connection 121 and the fifth copper connection 123. This helps to shorten the transmission path of the electrical signal, improve the response speed, reduce signal attenuation, and improve the signal-to-noise ratio.
[0065] In some embodiments, continue to refer to Figure 1 , Figure 2 or Figure 3 In the uncooled infrared detector pixel 10, the first interconnect structure 11 is located on the side of the second interconnect structure 12 facing the readout circuit 100; in other embodiments, the first interconnect structure 11 may also be located on the side of the second interconnect structure 12 away from the readout circuit 100.
[0066] Furthermore, the second copper connection portion 113 in the first interconnection structure 11 and the third copper connection portion 121 in the second interconnection structure 12 are disposed on the same layer.
[0067] In this configuration, the second copper connection portion 113 in the first interconnection structure 11 and the third copper connection portion 121 in the second interconnection structure 12 are both directly connected to the beam structure 114. For example, the second copper connection portion 113 in the first interconnection structure 11 and the third copper connection portion 121 in the second interconnection structure 12 are both located on the side of the beam structure 114 facing the readout circuit 100.
[0068] For example, with Figure 1 Taking the orientation shown as an example, the second copper connection 113 in the first interconnection structure 11 is the upper copper connection in the first interconnection structure 11, and the third copper connection 121 in the second interconnection structure 12 is the lower copper connection in the second interconnection structure 12. Both of these copper connections are directly connected to the beam structure 114. By setting these two copper connections to be at least partially on the same layer, for example, they can be patterned based on copper layers formed in the same process to achieve the same layer, thereby simplifying the process and the connection structure.
[0069] In some embodiments, continue to refer to Figures 1-3 In the uncooled infrared detector pixel 10, the number of copper pillars 2C in the first copper connector 112 and / or the fourth copper connector 122 is one or more. For example... Figure 1 or Figure 2 As shown, the number of copper pillars 2C in the first copper connector 112 and / or the fourth copper connector 122 is one; or, as shown... Figure 3 As shown, the number of copper pillars 2C in the first copper connector 112 and / or the fourth copper connector 122 is multiple, for example, two. In other embodiments, the number of copper pillars 2C in the uncooled infrared detector pixel 10 may also be three, four, or more, which is not limited here. Furthermore, the number of copper pillars 2C in the first copper connector 112 and the number of copper pillars 2C in the fourth copper connector 122 may be equal or unequal, which is not limited here.
[0070] When there are multiple copper pillars 2C in the same first copper connection portion 112 and / or fourth copper connection portion 122, the multiple copper pillars 2C can be arranged in a row, a column, an array, or any pattern, which is not limited here. Regarding the number of copper pillars 2C, the embodiments of this disclosure do not limit it, as long as it can meet the heat conduction, electrical conduction and support requirements of the uncooled infrared detection pixel 10.
[0071] In some embodiments, Figure 4 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 4 In the uncooled infrared detector pixel 10, the copper connector includes an adhesion layer 2N, which covers at least the sides and bottom of the copper pillar 2C. The adhesion layer 2N includes at least one of a titanium layer, a chromium layer, and a titanium-tungsten alloy layer. The bottom of the copper pillar 2C faces the readout circuit 100. Figure 4 Taking the orientation shown in the figure as an example, the bottom of copper pillar 2C is the lower part of copper pillar 2C.
[0072] When the adhesion layer 2N is placed at the bottom of the copper pillar 2C, it can enhance the adhesion between the copper connection part and the corresponding bottom connection part, that is, enhance the connection performance, including enhancing its mechanical connection performance and improving structural stability, as well as enhancing its electrical connection performance, reducing contact resistance, reducing loss in the process of electrical signal transmission, and improving detection performance.
[0073] The adhesion layer 2N surrounds the side of the copper pillar 2C, which increases the contact area between the adhesion layer 2N and the copper pillar 2C. This is equivalent to widening the transmission channel of the electrical signal and reducing its transmission resistance, thereby further reducing the transmission loss of the electrical signal and improving the detection performance. It also increases the adhesion characteristics with the medium, which can ensure that the copper pillar 2C can be completely deposited in the through hole to form a copper pillar. Furthermore, it can prevent diffusion between the copper pillar 2C and the medium, thereby improving the stability and reliability of the device.
[0074] It is understood that the adhesive layer 2N may cover the entire side of the copper pillar 2C or only part of the side of the copper pillar 2C, and this is not limited here.
[0075] The adhesion layer 2N may include at least one of a titanium layer, a chromium layer, and a titanium-tungsten alloy layer to form an adhesion layer based on a conductive layer, thereby enhancing the mechanical and electrical connection performance between corresponding connecting parts.
[0076] In some embodiments, Figure 5 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 5 In the uncooled infrared detector pixel 10, the copper connector includes a blocking layer 2D, which covers at least the sides and bottom of the copper pillar 2C. The blocking layer 2D includes a tantalum layer and / or a tantalum nitride layer.
[0077] The position of the barrier layer 2D relative to the copper pillar 2C is the same as the position of the adhesion layer 2N relative to the copper pillar 2C. The positional relationship can be understood as described above, and will not be repeated here.
[0078] The barrier layer 2D prevents the copper pillar 2C or the copper layer from diffusing with other material layers (such as the dielectric layer and sacrificial layer mentioned below), ensuring the performance of the film layer and thus ensuring the performance of the device.
[0079] In some embodiments, Figure 6 This is a schematic diagram of the structure of another uncooled infrared detection pixel provided in an embodiment of this disclosure. Figure 7 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 6 or Figure 7 In the uncooled infrared detector pixel 10, the first connecting part 111, the second copper connecting part 113, the third copper connecting part 121, and the fifth copper connecting part 123 all include a copper layer 2T; the copper layer 2T can be a pure copper layer or a copper alloy layer; the blocking layer 2D also covers the sides and bottom of the copper layer 2T of the first connecting part 111 and / or the third copper connecting part 121; the copper layer 2T of the second copper connecting part 113 and the copper pillar 2C of the first copper connecting part 112 are an integral copper structure, the copper layer 2T of the fifth copper connecting part 123 and the copper pillar 2C of the fourth copper connecting part 122 are an integral copper structure, and the blocking layer 2D covers the sides and bottom of the integral copper structure.
[0080] This is how copper interconnect structures are achieved. Copper has a significantly lower resistivity than aluminum, thus reducing signal delay and increasing the operating speed of uncooled infrared detector pixels 10 and the chips built upon them. Furthermore, the entire copper interconnect structure is made of copper, reducing contact resistance compared to aluminum interconnect structures, which is beneficial for improving chip performance. Additionally, copper exhibits far superior electromigration resistance compared to aluminum. Electromigration, the migration of metal atoms under the influence of electric current, can lead to interconnect breakage; copper's relatively higher electromigration resistance makes it more reliable, while aluminum processes are more prone to electromigration failure in high-density integrated circuits. Moreover, the copper process involves etching lines in an insulating layer, filling them with copper, and finally planarizing to form the copper interconnect structure. This process... High precision, fewer defects, and a smooth interconnect structure surface facilitate the planar fabrication of upper-layer sensing structures, ensuring the uniformity of long films and the integrity of electrical connections. Compared to aluminum processes, which require complex barrier layers to prevent diffusion, copper processes only require thinner barrier layers, simplifying the process. Furthermore, copper exhibits superior high-temperature performance stability compared to aluminum, giving it an advantage in high-temperature processes and long-term reliability in chip manufacturing. Additionally, copper interconnect structures offer better thermal conductivity and heat dissipation, reducing power consumption. Moreover, copper interconnects allow for smaller linewidths, increasing interconnect density and meeting high-density interconnect requirements, enabling infrared detectors with smaller linewidths, smaller pixel sizes, larger pixel arrays, and superior performance.
[0081] In some embodiments, Figure 8 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 8 The uncooled infrared detector pixel 10 may also include a dielectric layer 13, which covers the exposed surfaces of the interconnect structure and / or readout circuit 100, and the dielectric layer 13 is used at least to insulate and protect the interconnect structure and / or readout circuit 100.
[0082] The dielectric layer 13 is used to prevent low-pressure metal discharge. The dielectric layer 13 includes at least one of aluminum oxide layer, silicon oxide layer, hafnium oxide layer, silicon nitride layer, amorphous silicon layer, silicon carbide layer and amorphous carbon layer. It can enhance the mechanical strength of the connection and prevent the upper structure (i.e. the corresponding beam structure and absorption sensing part) from falling off due to poor connection with the copper connection part, thereby enhancing the structural stability. At the same time, it can protect the entire structure from corrosion and influence from the external environment.
[0083] Furthermore, the dielectric layer 13 is provided on the side of the copper pillar. This dielectric layer 13 serves as electrical insulation, reducing electrical connection abnormalities caused by metal discharge under low-pressure environments and mitigating the introduction of additional noise signals. This slows down the performance degradation of the copper pillar and extends the service life of the corresponding detection equipment. In addition, while protecting the copper pillar, the dielectric layer 13 also acts as an auxiliary support structure, improving the mechanical stability of the interconnect structure and thus enhancing the overall structural stability of the uncooled infrared detection pixel 10. Specifically, when an adhesion layer 2B is also provided on the side of the copper pillar, the dielectric layer 13 can cover the outside of the adhesion layer 2B.
[0084] In some implementations, the dielectric layer 13 also covers the surface of the copper connector (or aluminum connector) that does not correspond to the copper pillar, in order to further enhance structural stability and resist the influence of the external environment.
[0085] In some embodiments, Figure 9 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 9 In the uncooled infrared detector pixel 10, the beam structure 114 includes at least an insulating layer 1141 and a first metal layer 1142; the first metal layer 1142 is located on the side of the insulating layer 1141 facing the readout circuit 100, and is connected to at least the second copper connection portion 113 and the third copper connection portion 121. In other embodiments, the first metal layer 1142 may be located on the side of the insulating layer 1141 away from the readout circuit 100.
[0086] In the preceding paragraph, "connection" refers to either electrical connection or non-electrical connection (i.e., support connection). The second copper connection portion 113 is at least partially electrically connected to the beam structure 114. When the second copper connection portion 113 is partially electrically connected to the beam structure 114, the non-electrically connected second copper connection portion 113, together with the first copper connection portion 112 and the first connection portion 111, provides structural support for the beam structure 114. Specifically, the first metal layer 1142 in the beam structure 114 provides the electrical connection. When the first metal layer 1142 is connected to the interconnection structure, an electrical connection is achieved between the beam structure 114 and the interconnection structure. When the first metal layer 1142 is not connected to the interconnection structure and only the insulating layer 1141 is connected to the interconnection structure, the beam structure 114 only provides structural support.
[0087] In some embodiments, continue to refer to Figure 9 In the uncooled infrared detector pixel 10, the fourth copper connector 122 passes through the insulating layer 1141 and is electrically connected to the third copper connector 121.
[0088] Among them, at least the insulating layer 1141 includes a hollow area, such as Figure 9As shown at the location of the second interconnection structure 12 on the left side, the insulating layer 1141 includes a hollow area, or both the insulating layer 1141 and the first metal layer 1142 include hollow areas, i.e., the beam structure 114 includes a hollow area. The fourth copper connection portion 122 is electrically connected to the third copper connection portion 121 within the hollow area; the area of this hollow area is larger than the bottom area of the fourth copper connection portion 122. In terms of process, etching away the insulating layer 1141 or the insulating layer 1141 and the first metal layer 1142 above the third copper connection portion 121 first can prevent the fourth copper connection portion 122 from being non-conductive in the third copper connection portion 121, thus ensuring the stability and reliability of the electrical connection.
[0089] Alternatively, the area of the hollowed-out area in the beam structure 114 can be equal to the bottom area of the fourth copper connector 122, such as... Figure 9 As shown at the location of the second interconnection structure 12 on the right side, the fourth copper connector 122 passes through the beam structure 114 in this hollowed-out area and is electrically connected to the third copper connector 121. The structural design is simple and does not require consideration of the impact of large-area etching of the beam structure 114 on the corrosion and damage of the third copper connector 121.
[0090] In some embodiments, Figure 10 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 10 In the uncooled infrared detector pixel 10, the absorption sensing part 124 includes at least a heat-sensitive layer 1241 and a second metal layer 1242. The second metal layer 1242 is located on the side of the heat-sensitive layer 1241 facing or away from the readout circuit 100, and is connected to the fifth copper connection part 123. Figure 10 The second metal layer 1242 is shown only by way of example on the side of the heat-sensitive layer 1241 away from the readout circuit 100. In other embodiments, the second metal layer 1242 may also be located on the side of the heat-sensitive layer 1241 facing the readout circuit 100.
[0091] The heat-sensitive layer 1241 is used to convert infrared signals into electrical signals, that is, to convert infrared temperature detection signals into infrared detection electrical signals, and transmits them to the readout circuit 100 through the second metal layer 1242, the fifth copper connection portion 123, the fourth copper connection portion 122, the third copper connection portion 121, the beam structure 114, the second copper connection portion 113, the first copper connection portion 112, and the first connection portion 111. The heat-sensitive layer 1241 may include at least one of amorphous silicon, amorphous germanium-silicon oxide, vanadium oxide, titanium oxide, amorphous germanium, amorphous germanium-silicon oxide, silicon, germanium, germanium-silicon oxide, graphene, barium strontium titanate film, copper, and platinum. The second metal layer 1242 serves as an electrode layer for transmitting electrical signals, and may include at least one of titanium, titanium nitride, tantalum, tantalum nitride, nickel, chromium, platinum, tungsten, aluminum, copper, titanium alloys, and nickel-based alloys.
[0092] In some embodiments, Figure 11 This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 11 The uncooled infrared detector pixel 10 also includes at least one release blocking layer 14, which is located at least on the side of the readout circuit 100 facing the absorption sensing part 124; the first copper connection part 112 passes through the release blocking layer 14 and is electrically connected to the first connection part 111.
[0093] The release barrier layer 14 is used at least to protect the readout circuit 100 from process influences during the release etching process for fabricating the interconnect structure and during the etching process for the sacrificial layer. Optionally, the release barrier layer 14 is located at the interface between the readout circuit 100 and the interconnect structure and / or within the interconnect structure. That is, the release barrier layer 14 can be located at the interface between the readout circuit 100 and the interconnect structure, or it can be located within the interconnect structure, or the interface between the readout circuit 100 and the interconnect structure has a release barrier layer 14 and the interconnect structure also has a release barrier layer 14. The release barrier layer 14 is used to protect the readout circuit 100 from erosion during the etching process to release the sacrificial layer. The release barrier layer 14 includes at least one dielectric layer, and the dielectric material constituting the release barrier layer 14 includes at least one of silicon carbide, silicon carbonitride, silicon nitride, amorphous silicon, amorphous germanium, amorphous germanium silicon, silicon, germanium, silicon-germanium alloy, amorphous carbon, or alumina.
[0094] Among them, at least the release barrier layer 14 includes a hollow area, such as Figure 11 As shown at the location of the first interconnect structure 11 on the left side, the release barrier layer 14 and the titanium nitride layer 142 include a hollow area at the corresponding position of the first copper connector 112. The first copper connector 112 is electrically connected to the first connector 111 within this hollow area, and the area of this hollow area is larger than the bottom area of the first copper connector 112. Etching away the release barrier layer 14 first in the process ensures the electrical connection between the first copper connector 112 and the first connector 111, avoiding electrical continuity problems and additional noise issues caused by etching problems.
[0095] Alternatively, the area of the hollowed-out area in the release barrier layer 14 and the titanium nitride layer 142 can be equal to the bottom area of the first copper connection portion 112, such as... Figure 11 As shown at the location of the first interconnect structure 11 on the right side, the first copper connector 112 passes through the release barrier layer 14 and the titanium nitride layer 142 in the hollow area and is electrically connected to the first connector 111. The structural design is simple and does not need to consider the impact of large-area etching of the release barrier layer 14 on the corrosion and damage of the first connector 111.
[0096] In some embodiments, Figure 12This is a schematic diagram of the structure of another uncooled infrared detector pixel provided in an embodiment of this disclosure. (See reference...) Figure 12 The uncooled infrared detector pixel 10 also includes two sacrificial layers 15 located between the release blocking layer 14 and the absorption sensing unit 124.
[0097] For example, the sacrificial layer 15 may be located within the space where the first interconnect structure 11 and the second interconnect structure 12 are located; the sacrificial layer 15 may be released by vapor phase corrosion. Figure 12 The image shows the intermediate state of an uncooled infrared detector pixel. The sacrificial layer is used as the process material for preparing the uncooled infrared detector pixel, ensuring that the first interconnect structure 11 and the second interconnect structure 12 can be stacked sequentially. The hollow structure with the sacrificial layer 15 removed is released through vapor phase etching (see reference). Figures 1-11 This is the final display state of the uncooled infrared detection pixel.
[0098] The sacrificial layer 15 may be silicon oxide, and the gaseous corrosive gas may be at least one of hydrogen fluoride, carbon tetrafluoride, and trifluoromethane; or the sacrificial layer 15 may be silicon, and the gaseous corrosive gas may be at least one of silicon tetrafluoride, sulfur hexafluoride, carbon tetrafluoride, and xenon fluoride; or the sacrificial layer 15 may be polyimide (PI), and the gaseous corrosive gas may be at least one of oxygen, ozone, hydrogen fluoride, and hydrogen chloride.
[0099] In some embodiments, the fabrication steps of the first interconnect structure 11 may include: a first step, fabricating a first interconnect, specifically including: depositing a titanium layer and / or a titanium nitride layer, depositing an aluminum layer, depositing another titanium layer and / or a titanium nitride layer, and photolithographically etching to form a patterned first interconnect; or including: after photolithographically etching the pattern, depositing a tantalum layer and / or a copper tantalum nitride layer, depositing a copper layer, and planarizing by chemical mechanical polishing (CMP) to form the first interconnect; a second step, fabricating a first copper interconnect and a second copper interconnect, specifically including: depositing a silicon oxide sacrificial layer, applying photoresist, photolithographically etching the silicon oxide to form a first via, photolithographically etching again to form a second via, depositing a tantalum layer and / or a tantalum nitride layer, depositing a copper layer, and CMP to form the first copper interconnect and the second copper interconnect, while a third copper interconnect is also formed simultaneously; a third step, fabricating a beam structure, specifically including: depositing a first metal layer, photolithographically etching to form a patterned first metal layer structure, depositing an insulating layer, and photolithographically etching the insulating layer and the first metal layer to form a patterned beam structure.
[0100] In some embodiments, the fabrication steps of the second interconnect structure 12 may include: fabricating a fourth copper interconnect and a fifth copper interconnect, specifically including: depositing a silicon oxide sacrificial layer, patterning photoresist, photolithographically etching the silicon oxide to form a third via, photolithographically etching again to form a fourth via, depositing a tantalum layer and / or a tantalum nitride layer, depositing a copper layer, and forming the fourth copper interconnect and the fifth copper interconnect after CMP; and fabricating an absorption sensing portion, specifically including: depositing a second metal layer, photolithographically etching to form a patterned second metal layer structure, depositing a heat-sensitive layer, and photolithographically etching to form a patterned absorption sensing portion.
[0101] In some embodiments, the method for preparing the uncooled infrared detector pixel may further include: preparing a hollow structure, specifically including: VHF etching of a silicon oxide sacrificial layer.
[0102] In other embodiments, the first interconnection structure and the second interconnection structure in the uncooled infrared detection pixel may also be implemented using other structural forms provided in the embodiments of this application, which are not limited here.
[0103] Based on the above embodiments, this disclosure also provides an uncooled infrared detection chip.
[0104] For example, Figure 13 This is a schematic diagram of the structure of an uncooled infrared detection chip provided in an embodiment of this disclosure. (Reference) Figure 13 The uncooled infrared detection chip 20 may include an array structure composed of multiple uncooled infrared detection pixels 10 provided in any of the above embodiments, and includes a readout circuit 100.
[0105] Based on the above embodiments, this disclosure also provides a mechanism for uncooled infrared detection, which includes any of the uncooled infrared detection chips provided in the above embodiments.
[0106] For example, Figure 14 This is a schematic diagram of the structure of an uncooled infrared detector core provided in an embodiment of this disclosure. (Reference) Figure 14 The mechanism 30 includes an uncooled infrared detection chip 20; the mechanism 30 also includes a lens 31, which is used to focus the infrared signal onto the uncooled infrared detection chip 20 to improve the intensity of the infrared signal and improve the signal-to-noise ratio.
[0107] In other embodiments, the movement 20 may also include other structural and functional components, which are not described in detail or limited herein.
[0108] Based on the above embodiments, this disclosure also provides an uncooled infrared detection device, which may include any of the mechanisms provided in the above embodiments.
[0109] In other embodiments, the uncooled infrared detection device may also include other structural and functional components, which are not described in detail or limited herein.
[0110] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0111] The above description is merely a specific embodiment of this disclosure, enabling those skilled in the art to understand or implement it. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A uncooled infrared detector pixel, comprising: It includes a first interconnect structure and a second interconnect structure, wherein the first interconnect structure connects the second interconnect structure and the readout circuit; The first interconnection structure includes: a first connecting part, a first copper connecting part, a second copper connecting part, and a beam structure; the second interconnection structure includes a third copper connecting part, a fourth copper connecting part, a fifth copper connecting part, and an absorption sensing part. In the first interconnection structure, the two ends of the first copper connection are respectively connected to the first connection and the second copper connection, the first connection is connected to the readout circuit, and the second copper connection is connected to the beam structure; In the second interconnection structure, the two ends of the fourth copper connection are respectively connected to the third copper connection and the fifth copper connection. The third copper connection is connected to the beam structure, and the fifth copper connection is connected to the absorption sensing part. At least the second copper connection portion and the third copper connection portion are located on the side of the beam structure facing the readout circuit, and the beam structure is on a flat plane.
2. The uncooled infrared detector pixel of claim 1, wherein, The first connection portion includes one of an aluminum layer, an aluminum alloy layer, a copper layer, and a copper alloy layer. The first connection portion also includes a titanium layer and / or a titanium nitride layer located on the side of the aluminum layer and / or aluminum alloy layer facing away from and / or towards the readout circuit.
3. The uncooled infrared detection pixel according to claim 2, characterized in that, The first connection portion is the top metal layer of the readout circuit, or the first connection portion is a rewiring layer above the readout circuit; The same-layer structure of the first connection portion serves as the reflective layer of the uncooled infrared detection pixel, and / or the same-layer structure of at least one metal layer in the readout circuit serves as the reflective layer of the uncooled infrared detection pixel.
4. The uncooled infrared detector pixel of claim 1, wherein, In the first interconnection structure, the plane where the first connection portion is located is parallel to the plane where the second copper connection portion is located, and perpendicular to the first copper connection portion; In the second interconnect structure, the plane where the third copper connection portion is located is parallel to the plane where the fifth copper connection portion is located and perpendicular to the fourth copper connection portion; the first interconnect structure is located on the side of the second interconnect structure that is away from or towards the readout circuit; the second copper connection portion in the first interconnect structure and the third copper connection portion in the second interconnect structure are disposed on the same layer.
5. The uncooled infrared detector pixel of claim 1, wherein: The number of copper pillars in the first copper connector and / or the fourth copper connector is one or more.
6. The uncooled infrared detector pixel of claim 5, wherein, The copper connector includes a barrier layer that covers at least the sides and bottom of the copper pillar, and the barrier layer includes a tantalum layer and / or a tantalum nitride layer.
7. The uncooled infrared detector pixel of claim 6, wherein, The first connecting portion, the second copper connecting portion, the third copper connecting portion, and the fifth copper connecting portion all include a copper layer; the copper layer is a pure copper layer or a copper alloy layer; The barrier layer also covers the sides and bottom of the copper layer of the first connecting portion and / or the third copper connecting portion; The copper layer of the second copper connector and the copper pillar of the first copper connector are an integral copper structure, the copper layer of the fifth copper connector and the copper pillar of the fourth copper connector are an integral copper structure, and the barrier layer covers the sides and bottom of the integral copper structure.
8. The uncooled infrared detector pixel of claim 1, wherein: It also includes a dielectric layer that covers the exposed surfaces of the interconnect structure and / or the readout circuit, the dielectric layer serving at least to provide insulation protection for the interconnect structure and / or the readout circuit.
9. The uncooled infrared detector pixel of claim 1, wherein, The beam structure includes at least an insulating layer and a first metal layer; the first metal layer is located on the side of the insulating layer facing or away from the readout circuit, and is connected to at least the second copper connection portion and the third copper connection portion.
10. The uncooled infrared detector pixel of claim 9, wherein, The fourth copper connector passes through the insulating layer and is electrically connected to the third copper connector.
11. The uncooled infrared detector pixel of claim 1, wherein: The absorption sensing unit includes at least a heat-sensitive layer and a second metal layer, the second metal layer being located on the side of the heat-sensitive layer facing or away from the readout circuit, and connected to the fifth copper connection portion.
12. The uncooled infrared detector pixel of claim 1, wherein: It also includes at least one release barrier layer, which is located at least on the side of the readout circuit facing the absorption sensing part; the first copper connection portion passes through the release barrier layer and is electrically connected to the first connection portion.
13. The uncooled infrared detector pixel of claim 12, wherein: It also includes two sacrificial layers located between the release barrier layer and the absorption sensing unit.
14. A uncooled infrared detection chip, characterized in that, It includes an array structure consisting of multiple uncooled infrared detector pixels as described in any one of claims 1-13 and the readout circuit.
15. A core for uncooled infrared detection, characterized in that The mechanism includes the uncooled infrared detection chip as described in claim 14; the mechanism also includes a lens for focusing infrared signals onto the uncooled infrared detection chip.
16. A uncooled infrared detector device, characterized by The uncooled infrared detection device includes the mechanism as described in claim 15.