Low power consumption display screen wafer epitaxial monitoring protection device

By designing a low-power display chip epitaxial monitoring and protection device, and using a temperature control chamber and vacuum pumping components to regulate the temperature, the problem of temperature and environmental influence during the chip epitaxy process was solved, thereby improving the quality and purity of the crystal.

CN224402039UActive Publication Date: 2026-06-23HENAN YINGSHUO SEMICON LIGHTING TECH CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
HENAN YINGSHUO SEMICON LIGHTING TECH CO LTD
Filing Date
2025-04-21
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

In existing technologies, the epitaxial growth process of display chips is greatly affected by temperature and environment. Excessively high or low temperatures will affect the crystal quality and growth efficiency, and dust and impurities in the environment will affect the purity and uniformity of the crystal.

Method used

A low-power display chip epitaxial monitoring and protection device was designed, including an epitaxial protection box, a temperature control box, a vacuum pumping component, and a monitoring component. The temperature is regulated by a temperature monitoring sensor and an electric heating/cooling component to maintain a vacuum state and prevent the external environment from affecting the crystal.

Benefits of technology

Effectively controlling the temperature and environment during wafer epitaxy avoids excessively high or low temperatures from affecting crystal quality and growth efficiency, while also preventing dust and impurities from affecting crystal purity and uniformity, thereby improving crystal quality and growth efficiency.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The utility model discloses a kind of low-power-consumption display screen wafer epitaxial monitoring protection devices, including positioning plate, epitaxial protection box is fixed on the positioning plate upside, and epitaxial protection box top is set as open, epitaxial protection box top is provided with the protection cover that open is shielded and sealed, fixed with the partition frame in epitaxial protection box, the temperature control box that is in contact with partition frame side surface is arranged in the bottom of epitaxial protection box inner chamber, and partition frame separates epitaxial protection box inner chamber into several epitaxial chambers.This low-power-consumption display screen wafer epitaxial monitoring protection device is used for the monitoring of temperature when wafer epitaxial, and temperature can be regulated according to demand, avoid temperature excessively high and lead to grain growth too fast to influence crystal quality, simultaneously prevent temperature excessively low and lead to crystal growth efficiency too low, in addition, crystal epitaxial is carried out under vacuum state, avoid dust and impurity in environment to influence crystal purity and uniformity.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor fabrication technology, specifically to a low-power display chip epitaxial monitoring and protection device. Background Technology

[0002] Currently, reducing power consumption in displays mainly involves lowering chip voltage and improving overall light efficiency. This requires more precise control during the chip epitaxy process. However, the epitaxy process is greatly affected by temperature and environment. Excessive temperature can lead to excessively rapid grain growth, affecting crystal quality; while excessively low temperature can lead to slow grain growth, affecting crystal growth efficiency. Furthermore, dust and impurities in the environment can easily affect the purity and uniformity of the crystal, which is detrimental to chip epitaxy. Utility Model Content

[0003] The technical problem to be solved by this utility model is to overcome the existing defects and provide a low-power display chip epitaxial monitoring and protection device for monitoring the temperature during chip epitaxy. The temperature can be adjusted according to the needs to avoid excessively high temperature causing the crystal to grow too fast and affecting the crystal quality, while preventing excessively low temperature from causing the crystal growth efficiency to be too low. In addition, the crystal epitaxy is carried out in a vacuum state to avoid dust and impurities in the environment from affecting the purity and uniformity of the crystal. This can effectively solve the problems in the background technology.

[0004] To achieve the above objectives, this utility model provides the following technical solution: a low-power display chip epitaxial monitoring and protection device, comprising a positioning plate, an epitaxial protection box fixed on the upper side of the positioning plate, the top of the epitaxial protection box being open, a protective cover sealing the opening on the top of the epitaxial protection box, a partition frame fixed inside the epitaxial protection box, a temperature control box in contact with the side of the partition frame at the bottom of the inner cavity of the epitaxial protection box, and the partition frame dividing the inner cavity of the epitaxial protection box into several epitaxial chambers, a material spraying component being provided on the protective cover corresponding to the position of the epitaxial chamber, a vacuuming component communicating with the inner cavity of the epitaxial protection box being installed on the positioning plate, and a monitoring component being installed on the side of the epitaxial protection box.

[0005] As a preferred embodiment of this utility model, the vacuum assembly includes a vacuum pump mounted on the upper side of the positioning plate, and the pumping end of the vacuum pump is connected to the inner cavity of the epitaxial protection box.

[0006] As a preferred technical solution of this utility model, a vacuum box is installed on the upper side of the positioning plate, the pumping end of the vacuum pump is connected to the inner cavity of the vacuum box, a connecting pipe connected to the inner cavity of the vacuum box is installed on the side of the vacuum box, and the end of the connecting pipe away from the vacuum box is fixed to the side of the epitaxial protection box and connected to the inner cavity of the epitaxial protection box.

[0007] As a preferred embodiment of this utility model, the vacuum chamber is provided with a pressure relief assembly, which includes a pressure relief pipe installed on the side of the vacuum chamber and communicating with the inner cavity of the vacuum chamber, and a valve is installed on the pressure relief pipe.

[0008] As a preferred embodiment of this utility model, the monitoring component includes a pressure monitoring sensor installed on the side of the epitaxial protection box, and the monitoring end of the pressure monitoring sensor is located inside the epitaxial protection box, and the output end of the pressure monitoring sensor is electrically connected to the input end of the vacuum pump.

[0009] As a preferred embodiment of this utility model, an electric heating component and an electric cooling component are installed on the side of the temperature control box. The heating end of the electric heating component and the cooling end of the electric cooling component are both located inside the temperature control box, and a temperature adjustment knob for adjusting the power of the electric heating component and the electric cooling component is installed on the side of the temperature control box.

[0010] As a preferred embodiment of this utility model, a temperature monitoring sensor is installed on the side of the protective cover, and the detection end of the temperature monitoring sensor is in contact with the side of the partition.

[0011] As a preferred embodiment of the present invention, the material spraying assembly includes a nozzle installed on the side of the protective cover, and a feed pipe communicating with the inner cavity of the nozzle is installed on the side of the protective cover.

[0012] Compared with the prior art, the beneficial effects of this utility model are:

[0013] 1. The low-power display chip epitaxial monitoring and protection device of this utility model includes an epitaxial protection box for protecting the crystal during epitaxy, reducing the impact of the external environment on epitaxy, and preventing dust, impurities and other contaminants in the external environment from affecting the purity of the crystal. At the same time, the epitaxial protection box places the epitaxy in an independent space, which facilitates the control of factors such as temperature and air pressure as needed.

[0014] 2. The low-power display chip epitaxial monitoring and protection device of this utility model monitors the temperature inside the epitaxial protection box through a set temperature monitoring sensor. When the temperature is too high, the electric cooling component works to cool down the temperature inside the epitaxial protection box, so as to avoid the excessive temperature causing the grains to grow too fast and loosely, affecting the crystal quality. When the temperature is too low, the electric heating component works to heat up the temperature inside the epitaxial protection box, so as to avoid the excessive temperature causing the grains to grow slowly, affecting the crystal growth efficiency.

[0015] 3. The low-power display chip epitaxial monitoring and protection device of this utility model uses a vacuum pump to extract air from the epitaxial protection box to make the inside of the epitaxial protection box a vacuum state, reducing the oxygen content in the epitaxial protection box and preventing the crystal from being oxidized. At the same time, the vacuum state can prevent water vapor, dust and other substances in the air from affecting the epitaxial process, ensuring the purity and uniformity of the epitaxial crystal. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of this utility model;

[0017] Figure 2 This is a front view structural diagram of the present utility model;

[0018] Figure 3 This is a schematic diagram of the structure of this utility model after the protective cover has been removed.

[0019] In the diagram: 1. Positioning plate, 2. Epitaxial protective box, 3. Separator, 4. Temperature control box, 5. Electric heating component, 6. Electric cooling component, 7. Temperature adjustment knob, 8. Protective cover, 9. Temperature monitoring sensor, 10. Nozzle, 11. Feed pipe, 12. Vacuum pump, 13. Vacuum box, 14. Connecting pipe, 15. Pressure monitoring sensor, 16. Pressure relief pipe, 17. Valve. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] Please see Figure 1-3 This utility model provides a technical solution: a low-power display chip epitaxial monitoring and protection device, including a positioning plate 1, with an epitaxial protection box 2 fixed on the upper side of the positioning plate 1. The epitaxial protection box 2 is used for protection during crystal epitaxy, reducing the impact of the external environment on epitaxy. At the same time, the epitaxial protection box 2 places the epitaxy in an independent space, which is convenient for controlling factors such as temperature and air pressure as needed. The top of the epitaxial protection box 2 is open, which is convenient for placing the chip inside the epitaxial protection box 2. The top of the epitaxial protection box 2 is provided with a protective cover 8 to cover and seal the opening. The protective cover 8 ensures the airtightness of the epitaxial protection box 2 during use, which is convenient for the epitaxial protection box 2 to protect the epitaxy process.

[0022] The epitaxial protection box 2 is fixed with a partition frame 3, which divides the inner cavity of the epitaxial protection box 2 into several epitaxial chambers, so as to facilitate the use of this protective device in different areas. The protective cover 8 is equipped with a material spraying component corresponding to the position of the epitaxial chamber. The material spraying component includes a nozzle 10 installed on the side of the protective cover 8, and a feed pipe 11 connected to the inner cavity of the nozzle 10 is installed on the side of the protective cover 8. After the crystal material is vaporized into gaseous atoms or molecules, the atoms are transported into the feed pipe 11 by an inert gas and sprayed out through the nozzle 10 and deposited on the crystal. During the epitaxial process, the epitaxial protection box 2 plays a protective role to prevent dust, impurities and other substances in the external environment from affecting the purity of the crystal.

[0023] The bottom of the inner cavity of the epitaxial protection box 2 is equipped with a temperature control box 4 that contacts the side of the partition frame 3. An electric heating component 5 and an electric cooling component 6 are installed on the side of the temperature control box 4. The electric heating component 5 is preferably an electric heating plate, and the electric cooling component 6 is preferably a semiconductor cooling chip. The heat dissipation end of the semiconductor cooling chip is located outside the epitaxial protection box 2. The heating end of the electric heating component 5 and the cooling end of the electric cooling component 6 are both located inside the temperature control box 4. A temperature adjustment knob 7 is installed on the side of the temperature control box 4 to adjust the power of the electric heating component 5 and the electric cooling component 6. The operation of the electric heating component 5 or the electric cooling component 6 is controlled by rotating the temperature adjustment knob 7. The power of the electric heating component 5 or the electric cooling component 6 can be adjusted by the temperature adjustment knob 7, thereby realizing the control of heating temperature or cooling temperature to meet the temperature requirements of the epitaxial process.

[0024] A temperature monitoring sensor 9 is installed on the side of the protective cover 8. The detection end of the temperature monitoring sensor 9 is in contact with the side of the partition frame 3. The temperature monitoring sensor 9 monitors the temperature inside the epitaxial protective box 2. When the temperature is too high, the electric cooling component 6 works to cool down the temperature inside the epitaxial protective box 2, so as to avoid the excessive temperature causing the grains to grow too fast and not dense, which would affect the crystal quality. When the temperature is too low, the electric heating component 5 works to heat up the temperature inside the epitaxial protective box 2, so as to avoid the excessive temperature causing the grains to grow slowly, which would affect the crystal growth efficiency.

[0025] A vacuum assembly connected to the inner cavity of the epitaxial protection box 2 is installed on the positioning plate 1. The vacuum assembly includes a vacuum pump 12 installed on the upper side of the positioning plate 1, and the air extraction end of the vacuum pump 12 is connected to the inner cavity of the epitaxial protection box 2. The vacuum pump 12 is controlled to work, and the vacuum pump 12 extracts the air in the epitaxial protection box 2 to make the inside of the epitaxial protection box 2 a vacuum state, reducing the oxygen content in the epitaxial protection box 2 and preventing the crystal from being oxidized. At the same time, the vacuum state can prevent water vapor, dust and other substances in the air from affecting the epitaxial process, ensuring the purity and uniformity of the epitaxial crystal.

[0026] A vacuum chamber 13 is installed on the upper side of the positioning plate 1. The suction end of the vacuum pump 12 is connected to the inner cavity of the vacuum chamber 13. A connecting pipe 14 connected to the inner cavity of the vacuum chamber 13 is installed on the side of the vacuum chamber 13. The end of the connecting pipe 14 away from the vacuum chamber 13 is fixed to the side of the epitaxial protection box 2 and connected to the inner cavity of the epitaxial protection box 2. When the vacuum pump 12 is working, it draws air from the vacuum chamber 13. Then the vacuum chamber 13 draws air from the epitaxial protection box 2. The vacuum chamber 13 is used to assist the vacuum pump 12 in maintaining the vacuum state inside the epitaxial protection box 2 and reducing the working frequency of the vacuum pump 12.

[0027] A monitoring component is installed on the side of the epitaxial protection box 2. The monitoring component includes a pressure monitoring sensor 15 installed on the side of the epitaxial protection box 2. The monitoring end of the pressure monitoring sensor 15 is located inside the epitaxial protection box 2. The output end of the pressure monitoring sensor 15 is electrically connected to the input end of the vacuum pump 12. After each operation of the material injection component, the air pressure inside the epitaxial protection box 2 increases. After detecting the change in air pressure, the pressure monitoring sensor 15 controls the vacuum pumping component to operate and pump air to maintain the vacuum state inside the epitaxial protection box 2, which is convenient for wafer epitaxy.

[0028] The vacuum chamber 13 is equipped with a pressure relief assembly, which includes a pressure relief pipe 16 installed on the side of the vacuum chamber 13 and communicating with the inner cavity of the vacuum chamber 13. A valve 17 is installed on the pressure relief pipe 16. After the wafer epitaxy is completed, the valve 17 is opened, and external air enters the vacuum chamber 13 through the pressure relief pipe 16, so that the inside of the vacuum chamber 13 is restored to atmospheric pressure, making it easy to open the protective cover 8 and take out the wafer in the epitaxy protective box 2.

[0029] The electric heating component 5, electric cooling component 6, temperature control knob 7, temperature monitoring sensor 9, vacuum pump 12, pressure monitoring sensor 15, etc. used in this utility model are all commonly used electronic components in the prior art. Their working methods and circuit structures are known technologies. The operation of the electronic components in this utility model is controlled by setting a switch group or a PLC controller. This method is a common technical means used by technicians and will not be described in detail here.

[0030] This low-power display chip epitaxial growth monitoring and protection device is used to monitor the temperature during chip epitaxy and can adjust the temperature as needed to prevent excessively high temperatures from causing excessively rapid grain growth and affecting crystal quality, while also preventing excessively low temperatures from causing excessively low crystal growth efficiency. In addition, crystal epitaxy is carried out in a vacuum state to avoid dust and impurities in the environment from affecting the purity and uniformity of the crystal.

[0031] The parts not disclosed in this utility model are all prior art, and their specific structures, materials, and working principles will not be described in detail. Although embodiments of this utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of this utility model, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A low-power display chip epitaxial monitoring and protection device, comprising a positioning plate (1), characterized in that: The positioning plate (1) is fixed with an epitaxial protective box (2) on the upper side, and the top of the epitaxial protective box (2) is open. The top of the epitaxial protective box (2) is provided with a protective cover (8) to cover and seal the open. The epitaxial protective box (2) is fixed with a partition frame (3). The bottom of the inner cavity of the epitaxial protective box (2) is provided with a temperature control box (4) that contacts the side of the partition frame (3). The partition frame (3) divides the inner cavity of the epitaxial protective box (2) into several epitaxial cavities. The protective cover (8) is provided with a material spraying component corresponding to the position of the epitaxial cavity. The positioning plate (1) is equipped with a vacuum component that communicates with the inner cavity of the epitaxial protective box (2). The side of the epitaxial protective box (2) is equipped with a monitoring component.

2. The low-power display chip epitaxial monitoring and protection device according to claim 1, characterized in that: The vacuum assembly includes a vacuum pump (12) installed on the upper side of the positioning plate (1), and the pumping end of the vacuum pump (12) is connected to the inner cavity of the epitaxial protection box (2).

3. The low-power display chip epitaxial monitoring and protection device according to claim 2, characterized in that: A vacuum box (13) is installed on the upper side of the positioning plate (1). The suction end of the vacuum pump (12) is connected to the inner cavity of the vacuum box (13). A connecting pipe (14) connected to the inner cavity of the vacuum box (13) is installed on the side of the vacuum box (13). The end of the connecting pipe (14) away from the vacuum box (13) is fixed to the side of the epitaxial protection box (2) and connected to the inner cavity of the epitaxial protection box (2).

4. The low-power display chip epitaxial monitoring and protection device according to claim 3, characterized in that: The vacuum chamber (13) is provided with a pressure relief assembly, which includes a pressure relief pipe (16) installed on the side of the vacuum chamber (13) and communicating with the inner cavity of the vacuum chamber (13), and a valve (17) is installed on the pressure relief pipe (16).

5. The low-power display chip epitaxial monitoring and protection device according to claim 2, characterized in that: The monitoring component includes a pressure monitoring sensor (15) installed on the side of the epitaxial protection box (2), and the monitoring end of the pressure monitoring sensor (15) is located inside the epitaxial protection box (2), and the output end of the pressure monitoring sensor (15) is electrically connected to the input end of the vacuum pump (12).

6. The low-power display chip epitaxial monitoring and protection device according to claim 1, characterized in that: The temperature control box (4) is equipped with an electric heating component (5) and an electric cooling component (6) on its side. The heating end of the electric heating component (5) and the cooling end of the electric cooling component (6) are both located inside the temperature control box (4). The temperature control box (4) is equipped with a temperature adjustment knob (7) for adjusting the power of the electric heating component (5) and the electric cooling component (6).

7. The low-power display chip epitaxial monitoring and protection device according to claim 1, characterized in that: A temperature monitoring sensor (9) is installed on the side of the protective cover (8), and the detection end of the temperature monitoring sensor (9) is in contact with the side of the partition (3).

8. The low-power display chip epitaxial monitoring and protection device according to claim 1, characterized in that: The material spraying assembly includes a nozzle (10) installed on the side of the protective cover (8), and a feed pipe (11) connected to the inner cavity of the nozzle (10) is installed on the side of the protective cover (8).