Power module, motor controller and vehicle
By eliminating the insulating material between the semiconductor chip and the metal heat sink in the power module and using insulating connectors for fixed connection, direct bonding between the semiconductor chip and the metal heat sink is achieved, solving the problems of poor heat dissipation performance and high manufacturing cost, and improving heat dissipation efficiency and structural stability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SUZHOU INOSA UNITED POWER SYST CO LTD
- Filing Date
- 2025-07-14
- Publication Date
- 2026-06-26
AI Technical Summary
Existing power modules have poor heat dissipation performance and high manufacturing costs, mainly due to the increased thermal resistance caused by adding insulating material between the semiconductor chip and the metal heat sink.
Multiple power devices are fixedly connected using insulating connectors, and the insulating material between the semiconductor chip and the metal heat sink is eliminated, allowing the semiconductor chip to be directly bonded to the metal heat sink. The high thermal conductivity of the metal heat sink is used to quickly conduct heat, and the insulating connectors achieve insulation between the power devices.
It improves the heat dissipation performance of power devices, reduces manufacturing costs, and enhances structural stability and installation efficiency through the fixed connection of insulating connectors.
Smart Images
Figure CN224419259U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of electronic equipment technology, and in particular to a power module, a motor controller, and a vehicle. Background Technology
[0002] Currently, the heat dissipation solutions for the power modules of high-power motor controllers mostly adopt metal structures. In order to achieve insulation between the phases of multiple power devices, insulating materials are often added between the semiconductor chip and the metal heat sink. The addition of insulating materials increases the thermal resistance between the semiconductor chip and the metal heat sink, resulting in poor heat dissipation performance of the power devices. In addition, the addition of insulating materials also increases the manufacturing cost of the power devices. Utility Model Content
[0003] The main purpose of this invention is to propose a power module, a motor controller, and a vehicle, aiming to solve the problems of poor heat dissipation performance and high manufacturing cost of existing power modules.
[0004] To achieve the above objectives, this utility model proposes a power module, comprising:
[0005] Multiple power devices, each of which includes a metal heat sink and at least one semiconductor chip, wherein the semiconductor chip is directly disposed on the metal heat sink and is attached to the metal heat sink.
[0006] An insulating connector is disposed between two adjacent power devices, and multiple power devices are fixedly connected through the insulating connector.
[0007] In one embodiment, the insulating connector is provided on the outer periphery of each of the power devices.
[0008] In one embodiment, at least a portion of the metal heat sink is located outside the insulating connector.
[0009] In one embodiment, the insulating connector is formed on a portion of the outer periphery of each of the metal radiators.
[0010] In one embodiment, the power device further includes a first connection layer disposed between the semiconductor chip and the metal heat sink.
[0011] In one embodiment, the insulating connector is formed on the outer periphery of each of the metal heat sinks, each of the first connecting layers, and each of the semiconductor chips.
[0012] In one embodiment, the power device further includes a metal substrate and a second interconnect layer, wherein the semiconductor chip, the first interconnect layer, the metal substrate, the second interconnect layer, and the metal heat sink are stacked from top to bottom.
[0013] In one embodiment, the insulating connector is formed on the outer peripheral side of each of the metal substrates;
[0014] And / or, the insulating connector is formed on the outer peripheral side of each of the second connecting layers and each of the metal heat sinks.
[0015] In one embodiment, the insulating connector is formed on the outer periphery of each of the metal heat sinks, each of the second connecting layers, each of the metal substrates, each of the first connecting layers, and each of the semiconductor chips.
[0016] In one embodiment, the semiconductor chip is electrically connected to the metal heat sink.
[0017] This utility model also proposes a motor controller, including the power module as described in the above embodiments.
[0018] This utility model also proposes a vehicle, including the motor controller as described in the above embodiments.
[0019] The technical solution of this utility model allows the semiconductor chip and the metal heat sink in each power device to be directly connected in a close-fitting manner. This enables the heat generated by the semiconductor chip to be quickly conducted to the metal heat sink, and then the metal heat sink can quickly dissipate the heat outward, thereby improving the heat dissipation performance of the power device. Furthermore, multiple power devices can be insulated and fixedly connected to each other through insulating connectors to form a complete power module. Attached Figure Description
[0020] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0021] Figure 1 A schematic diagram of the structure of the first embodiment of the power module provided by this utility model;
[0022] Figure 2 for Figure 1 Cross-sectional view of the medium power module;
[0023] Figure 3 A schematic diagram of the structure of the second embodiment of the power module provided by this utility model;
[0024] Figure 4 A schematic diagram of the third embodiment of the power module provided by this utility model;
[0025] Figure 5 A schematic diagram of the fourth embodiment of the power module provided by this utility model;
[0026] Figure 6 A schematic diagram of the fifth embodiment of the power module provided by this utility model;
[0027] Figure 7 This is a schematic diagram of the sixth embodiment of the power module provided by this utility model.
[0028] Explanation of icon numbers:
[0029] 1. Power module; 10. Power device; 111. Semiconductor chip; 112. First connection layer; 113. Metal substrate; 114. Second connection layer; 12. Metal heat sink; 20. Insulating connector.
[0030] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0031] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.
[0032] It should be noted that if the embodiments of this utility model involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a specific posture. If the specific posture changes, the directional indicators will also change accordingly.
[0033] Furthermore, if the embodiments of this utility model involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the use of "and / or" or "and / or" throughout the text includes three parallel solutions. For example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.
[0034] Currently, the heat dissipation solutions for the power modules of high-power motor controllers mostly adopt metal structures. In order to achieve insulation between the phases of multiple power devices, insulating materials are often added between the semiconductor chip and the metal heat sink. The addition of insulating materials increases the thermal resistance between the semiconductor chip and the metal heat sink, resulting in poor heat dissipation performance of the power devices. In addition, the addition of insulating materials also increases the manufacturing cost of the power devices.
[0035] This utility model proposes a power module.
[0036] Please see Figure 1 and Figure 2 In one embodiment of this utility model, the power module 1 includes a plurality of power devices 10 and an insulating connector 20. Each power device 10 includes a metal heat sink 12 and at least one semiconductor chip 111. The semiconductor chip 111 is directly disposed on the metal heat sink 12 and is attached to the metal heat sink 12. The insulating connector 20 is disposed between two adjacent power devices 10, and the plurality of power devices 10 are fixedly connected through the insulating connector 20.
[0037] The power module 1 in this utility model includes multiple power devices 10. Each power device 10 includes a semiconductor chip 111 and a metal heat sink 12. The semiconductor chip 111 is directly disposed on the metal heat sink 12 and is in close contact with it. This arrangement allows the metal heat sink 12 to quickly dissipate the heat generated by the semiconductor chip 111 when it generates heat during operation, thereby improving the heat dissipation performance of the power device 10. It is worth noting that there can be one or more semiconductor chips 111 disposed on the same metal heat sink 12. When multiple semiconductor chips 111 are disposed on the same metal heat sink 12, the side connected to the metal heat sink 12 must always maintain the same potential. To ensure that the multiple power devices 10 are insulated from each other, an insulating connector 20 is also provided in this embodiment. The insulating connector 20 is made of an insulating material, such as plastic, and is not limited in this respect. An insulating connector 20 is disposed between two adjacent power devices 10. The insulating connector 20 is fixedly connected to each of the two adjacent power devices 10. Because the insulating connector 20 has insulating properties, multiple power devices 10 can not only be fixedly connected through the insulating connector 20, but also achieve the effect of insulating connection between multiple power devices 10, thus forming a complete power module 1 through the fixed connection of multiple power devices 10. This configuration of the power module 1 makes subsequent installation more convenient. In this embodiment, compared with the prior art, the insulating material disposed between the semiconductor chip 111 and the metal heat sink 12 is eliminated, allowing the heat generated by the semiconductor chip 111 to be conducted to the metal heat sink 12 more quickly, and the heat sink 12 quickly dissipates the heat. In this embodiment, although the insulating material disposed between the semiconductor chip 111 and the metal heat sink 12 is eliminated, an insulating connector 20 is used to connect multiple power devices 10 to achieve insulating connection between them.
[0038] It is understood that the metal heat sink 12 is made of a metal material with high thermal conductivity, and its upper surface is directly attached to the semiconductor chip 111, or is thermally connected through a thermally conductive material. For example, the metal heat sink 12 is a rectangular heat sink base. In addition, the metal heat sink 12 may also include heat sink pillars or heat sink fins to increase the heat dissipation area and improve heat dissipation efficiency.
[0039] With this configuration, the semiconductor chip 111 and the metal heat sink 12 in each power device 10 are directly connected in a close-fitting manner. This allows the heat generated by the semiconductor chip 111 to be quickly conducted to the metal heat sink 12, and then the metal heat sink 12 can quickly dissipate the heat to the outside, thereby improving the heat dissipation performance of the power device 10. Furthermore, multiple power devices 10 can be insulated and fixedly connected to each other through insulating connectors 20 to form a complete power module 1.
[0040] In one embodiment, the insulating connector 20 is provided on the outer periphery of each power device 10. For example, Figures 1 to 7 As shown, each power device 10 is provided with an insulating connector 20 on its outer periphery. That is, the insulating connector 20 is arranged around the outer periphery of each power device 10. This arrangement can effectively improve the connection strength between the insulating connector 20 and each power device 10, thereby indirectly improving the overall structural stability of the power module 1.
[0041] In one embodiment, such as Figure 6 and Figure 7 As shown, at least a portion of the metal radiator 12 is located outside the insulating connector 20. This arrangement allows the portion of the metal radiator 12 exposed outside the insulating connector 20 to be exposed to the external environment, enabling direct contact with the medium in the external environment for effective heat exchange.
[0042] In one embodiment, the insulating connector 20 is formed on a portion of the outer peripheral side of each of the metal heat sinks 12. For example, as shown... Figure 2 As shown, in this embodiment, to facilitate the manufacturing of the power module 1, the insulating connector 20 can be manufactured using any of the following methods, including but not limited to: plastic injection molding, insulating adhesive bonding, or pressing processes. Furthermore, the insulating connector 20 can be formed onto the outer periphery of the metal heat sink 12 during the manufacturing process, so that the insulating connector 20 and the metal heat sink 12 form an integrated body through any of the above processes. This saves the subsequent steps of connecting and installing the metal heat sink 12 and the insulating connector 20. After the insulating connector 20 is integrated with the metal heat sink 12, the semiconductor chip 111 is then mounted on the metal heat sink 12. This arrangement effectively improves the manufacturing efficiency of the power module 1.
[0043] In one embodiment, the power device 11 further includes a first connection layer 112 disposed between the semiconductor chip 111 and the metal heat sink 12. For example, Figure 2As shown, in this embodiment, the semiconductor chip 111 is disposed above the first connection layer 112, and the semiconductor chip 111 is disposed on the metal heat sink 12 through the first connection layer 112. It is worth mentioning that the first connection layer 112 is made of a metal material with high thermal conductivity. It is understood that the semiconductor chip 111 can be an IGBT, MOSFET, or diode chip; no further limitations are imposed on this.
[0044] In one embodiment, the insulating connector 20 is formed on the outer periphery of each of the metal heat sinks 12, each of the first connecting layers 112, and each of the semiconductor chips 111. For example, as shown... Figure 6 As shown, in this embodiment, the insulating connector 20 is disposed on the outer periphery of part of the metal heat sink 12, the first connection layer 112 and the semiconductor chip 111. This arrangement can improve the connection stability between the insulating connector 20 and each power device 10.
[0045] In one embodiment, the power device 11 further includes a metal substrate 113 and a second interconnect layer 114, wherein the semiconductor chip 111, the first interconnect layer 112, the metal substrate 113, the second interconnect layer 114, and the metal heat sink 12 are stacked from top to bottom. For example, as shown... Figure 3 , Figure 4 , Figure 5 and Figure 7 As shown, considering the difficulty of fabricating the semiconductor chip 111 onto the metal heat sink 12 via the first connection layer 112, in this embodiment, the semiconductor chip 111 and the first connection layer 112 are disposed on a metal substrate 113. The metal substrate 113 is then connected to the metal heat sink 12 via a second connection layer 114 located on the surface opposite to the semiconductor chip 111. This arrangement reduces the difficulty of mounting the semiconductor chip 111.
[0046] In one embodiment, the insulating connector 20 is formed on the outer peripheral side of each of the metal substrates 113; and / or, the insulating connector 20 is formed on the outer peripheral side of each of the second connecting layers 114 and each of the metal heat sinks 12. For example, as... Figure 3 As shown, in this embodiment, the insulating connector 20 is disposed on the outer periphery of the metal substrate 113. This arrangement allows the entire metal heat sink 12 to be exposed outside the insulating connector 20, thus facilitating more flexible manufacturing of the power device 10 as a whole. In another embodiment, as... Figure 4 As shown, the insulating connector 20 is disposed on the outer periphery of a portion of the metal heat sink 12. This arrangement allows for more flexible configuration of the semiconductor chip 111, the first interconnect layer 112, the metal substrate 113, and the second interconnect layer 114. In other embodiments, such as Figure 5As shown, the insulating connector 20 is simultaneously disposed on the outer periphery of the metal substrate 113, the second connecting layer 114, and part of the metal heat sink 12. This arrangement can further improve the connection stability between the semiconductor chip 111 and the metal heat sink 12 compared to the above embodiment.
[0047] The insulating connector 20 is formed on the outer periphery of each of the metal heat sinks 12, each of the second connecting layers 114, each of the metal substrates 113, each of the first connecting layers 112, and each of the semiconductor chips 111. For example, as shown... Figure 7 As shown, in this embodiment, the insulating connector 20 is directly disposed in a semi-enclosed manner on the outer periphery of each power device 10, that is, formed on the outer periphery of each metal heat sink 12, each second connection layer 114, each metal substrate 113, each first connection layer 112, and each semiconductor chip 111. It is worth mentioning that a portion of the metal heat sink 12 is located outside the insulating connector 20.
[0048] It is understood that the insulating connector 20 can be formed on the outer periphery of the metal substrate 113, or on the outer periphery of the second connecting layer 114 and part of the metal heat sink 12, or on the outer periphery of the metal substrate 113, the second connecting layer 114 and part of the metal heat sink 12, for example, as shown in the example. Figure 3 As shown, to facilitate the manufacturing of power module 1, the insulating connector 20 can also be configured in the same manner as in the above embodiment. The difference is that in this embodiment, the insulating connector 20 is formed on the outer periphery of the metal substrate 113, and then the semiconductor chip 111 and the metal heat sink 12 are respectively disposed on opposite surfaces of the metal substrate 113. This also improves the manufacturing efficiency of power module 1. Alternatively, as exemplarily... Figure 5 As shown, the insulating connector 20 is formed on the outer periphery of part of the metal heat sink 12, the second connecting layer 114 and the metal substrate 113.
[0049] In one embodiment, the semiconductor chip 111 is electrically connected to the metal heat sink 12. In this embodiment, the semiconductor chip 111 is directly disposed on the metal heat sink 12 and electrically connected to the metal heat sink 12. For example, the semiconductor chip 111 can be directly soldered to the metal heat sink 12; or the semiconductor chip 111 can be directly sintered to the metal heat sink 12; or the semiconductor chip 111 can be directly bonded to the metal heat sink 12; of course, the semiconductor chip 111 can also be adhered to the metal heat sink 12 with conductive adhesive, and no further limitations are imposed on this.
[0050] This utility model also proposes a motor controller, which includes a power module 1. The specific structure of the power module 1 is as described in the above embodiments. Since this motor controller adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be described in detail here. This motor controller can be used in the traction motor drive system of pure electric vehicles, plug-in hybrid electric vehicles, and hybrid electric vehicles.
[0051] This utility model also proposes a vehicle, which includes a motor controller. The motor controller includes a power module 1, the specific structure of which is described in the above embodiments. Since this vehicle indirectly adopts all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be elaborated upon here. This vehicle includes pure electric vehicles, plug-in hybrid electric vehicles, and hybrid electric vehicles.
[0052] The above description is merely an exemplary embodiment of the present utility model and does not limit the scope of protection of the present utility model. Any equivalent structural transformations made based on the technical concept of the present utility model and the contents of the present utility model specification and drawings, or direct / indirect applications in other related technical fields, are included within the scope of protection of the present utility model.
Claims
1. A power module, characterized in that, include: Multiple power devices, each of which includes a metal heat sink and at least one semiconductor chip, wherein the semiconductor chip is directly disposed on the metal heat sink and is attached to the metal heat sink. An insulating connector is disposed between two adjacent power devices, and multiple power devices are fixedly connected through the insulating connector.
2. The power module as described in claim 1, characterized in that, Each of the power devices is provided with the insulating connector on its outer periphery.
3. The power module as described in claim 2, characterized in that, At least a portion of the metal heat sink is located outside the insulating connector.
4. The power module as described in claim 3, characterized in that, The insulating connector is formed on a portion of the outer periphery of each of the metal radiators.
5. The power module as described in claim 4, characterized in that, The power device further includes a first connection layer, which is disposed between the semiconductor chip and the metal heat sink.
6. The power module as described in claim 5, characterized in that, The insulating connector is formed on the outer periphery of each of the metal heat sinks, each of the first connecting layers, and each of the semiconductor chips.
7. The power module as described in claim 5, characterized in that, The power device further includes a metal substrate and a second connection layer, and the semiconductor chip, the first connection layer, the metal substrate, the second connection layer, and the metal heat sink are stacked from top to bottom.
8. The power module as described in claim 7, characterized in that, The insulating connector is formed on the outer peripheral side of each of the metal substrates; And / or, the insulating connector is formed on the outer peripheral side of each of the second connecting layers and each of the metal heat sinks.
9. The power module as described in claim 7, characterized in that, The insulating connector is formed on the outer periphery of each of the metal heat sinks, each of the second connecting layers, each of the metal substrates, each of the first connecting layers, and each of the semiconductor chips.
10. The power module as described in claim 1, characterized in that, The semiconductor chip is electrically connected to the metal heat sink.
11. A motor controller, characterized in that, Includes the power module as described in any one of claims 1 to 10.
12. A vehicle, characterized in that, Including the motor controller as described in claim 11.