A multi-directional air intake silicon carbide coating chemical vapor deposition equipment

Abstract

This invention provides a multi-directional air intake silicon carbide coating chemical vapor deposition (CVD) device, belonging to the technical field of CVD equipment. It includes a CVD device body, a gas delivery system, and a control system. The CVD device body has a reaction chamber with gas inlets on its sidewalls, top, and bottom. The gas delivery system has a gas output end, which is connected to the gas inlets on the sidewalls and top of the reaction chamber via pipelines, and is used to introduce gas into the reaction chamber. The control system is connected to the gas delivery system and is used to control the gas flow rate and pressure in the multiple pipelines. By providing gas inlets at the top, bottom, and sidewalls of the reaction chamber and controlling the gas flow rate and pressure in the pipelines, this invention can control the gas flow into the reaction chamber from different directions, achieving multi-directional air intake and ensuring a uniform silicon carbide coating thickness distribution to meet processing requirements.

Description

Technical Field

[0001] This utility model belongs to the technical field of chemical vapor deposition equipment, and more specifically, it relates to a multi-directional air intake silicon carbide coating chemical vapor deposition equipment. Background Technology

[0002] Currently, mainstream silicon carbide coating CVD equipment generally adopts a side-in, side-out horizontal gas inlet method, meaning the reaction gas is horizontally introduced from one side of the reaction chamber and horizontally discharged from the other side. This design has advantages such as high deposition efficiency and mature technology for regularly shaped, horizontally placed planar substrates (such as plate graphite parts). However, in the semiconductor manufacturing field, the graphite parts (such as crucibles, insulation cylinders, gas spray heads, etc.) used in key processes such as crystal growth and epitaxial growth are mostly irregular or cylindrical structures. The horizontal gas inlet method has significant drawbacks when coating such three-dimensional complex substrates: 1) Uneven airflow coverage: unidirectional horizontal airflow is difficult to form a uniform flow field on the inner / outer wall of the cylinder, resulting in differences in coating thickness distribution; 2) Complex process adjustment: multiple experiments are needed to adjust the substrate placement angle or perform multiple deposition cycles for compensation, resulting in low production efficiency and high cost; 3) Dead zone defects: areas such as the cylinder ends and deep holes are prone to gas stagnation, forming deposition dead zones that can lead to coating peeling or performance degradation.

[0003] To overcome the above limitations, it is urgent to develop a silicon carbide coating CVD equipment with flexible air intake direction, enabling multi-directional air intake and ensuring uniform thickness distribution of the silicon carbide coating to meet usage requirements. Utility Model Content

[0004] The purpose of this invention is to provide a multi-directional air intake silicon carbide coating chemical vapor deposition equipment, which aims to solve the technical problems of uneven airflow coverage, poor uniformity of silicon carbide coating thickness, and the need for multiple deposition cycles for compensation when coating substrates with complex three-dimensional structures.

[0005] To achieve the above objectives, the technical solution adopted by this utility model is: to provide a multi-directional air intake silicon carbide coating chemical vapor deposition device, comprising:

[0006] The chemical vapor deposition equipment body has a reaction chamber for containing a substrate and gaseous reactants, and gas inlets are provided on the side walls, top and bottom of the reaction chamber;

[0007] A gas delivery system has a gas output end, which is connected to the gas inlets located on the side wall and top of the reaction chamber via pipelines, and is used to introduce gas into the reaction chamber.

[0008] A control system is connected to the gas delivery system and is used to control the gas delivery flow rate and pressure in the multiple pipelines, and to introduce gas into the reaction chamber in multiple directions by adjusting the gas flow rate in the multiple pipelines.

[0009] In one possible implementation, each of the multiple pipelines is equipped with a mass flow controller and a proportional control valve. The mass flow controller measures the gas flow rate within the pipeline, and the proportional control valve works in conjunction with the mass flow controller to control the gas flow rate within the pipeline. Each of the multiple pipelines is also equipped with a pressure regulating valve, and a pressure sensor is installed inside the reaction chamber. The pressure regulating valve regulates the gas pressure within the pipeline, and the pressure sensor monitors the gas pressure inside the reaction chamber in real time. The mass flow controller, the pressure regulating valve, the proportional control valve, and the pressure sensor are all electrically connected to the control system, and their operation is controlled by the control system.

[0010] In one possible implementation, the sidewall of the reaction chamber is evenly distributed with multiple rows of gas inlets along its circumference. Each row of gas inlets includes multiple gas inlets and is equally spaced along the height of the reaction chamber. The pipeline located between the gas output end and the sidewall of the reaction chamber, with its end near the reaction chamber, is connected to one of the multiple gas inlets in one row via multiple branch pipes.

[0011] In one possible implementation, multiple branch pipes are interconnected to form an integral structure, each branch pipe is equipped with a valve, and each valve is electrically connected to the control system and its operation is controlled by the control system.

[0012] In one possible implementation, a rotary table is provided around the outside of the reaction chamber. The upper end of the rotary table has a degree of freedom to rotate around the outer circumference of the reaction chamber. The branch pipe located at the bottom is connected to the upper end of the rotary table. Multiple branch pipes can be connected to a row of gas inlets at different positions by means of the rotation of the rotary table.

[0013] In one possible implementation, the rotary table includes multiple arc-shaped rotating components connected end to end. The multiple arc-shaped rotating components are combined to form a ring and form a gap with the outer wall of the reaction chamber. The arc-shaped rotating components are adapted to support the branch pipe located at the bottom.

[0014] In one possible implementation, the arc-shaped rotating component includes:

[0015] The arc-shaped base has a top sliding groove along its arc direction at the top.

[0016] Multiple rolling elements, each having a lower part disposed within the top sliding groove and having a degree of freedom to roll within the top sliding groove along its extending direction;

[0017] The support plate is arc-shaped and has a bottom groove along its arc direction at the lower end. The support plate is placed on the upper end of the multiple rolling elements and is located directly above the arc-shaped base. The upper parts of the multiple rolling elements are all placed inside the bottom groove. The branch pipe at the bottom is placed on the upper end of the support plate.

[0018] The multiple arc-shaped base pieces are connected end to end to form an integral structure, and the multiple support plates are connected end to end to form an integral structure, which can rotate circumferentially with the help of multiple rolling elements.

[0019] In one possible implementation, a clamping assembly is connected to the upper end of the rotary table for clamping and fixing the branch pipe located at the bottom. The multiple branch pipes can be adjusted to communicate with the gas inlets at different positions by means of the rotation of the rotary table.

[0020] In one possible implementation, the clamping assembly includes:

[0021] The base is connected at its lower end to the upper end of the rotary table;

[0022] The left clamping plate is detachably connected to the upper end of the base at its lower end, and its upper end is semi-cylindrical.

[0023] The right clamp plate is detachably connected to the upper end of the base at its lower end and is semi-cylindrical at its upper end. It is arranged side by side with the left clamp plate. The upper end of the right clamp plate and the upper end of the left clamp plate can be combined to form a cylindrical shape and create a clamping space suitable for clamping the branch pipe.

[0024] In one possible implementation, both the left and right clamping plates have connecting plates at their lower ends, and the connecting plates are detachably connected to the upper end of the base.

[0025] The beneficial effects of the multi-directional air intake silicon carbide coating chemical vapor deposition equipment provided by this utility model are as follows: Compared with the prior art, the multi-directional air intake silicon carbide coating chemical vapor deposition equipment of this utility model includes a chemical vapor deposition equipment body, a gas delivery system, and a control system. The chemical vapor deposition equipment body has a reaction chamber for accommodating the substrate and gaseous reactants. Gas inlets are provided on the side wall, top, and bottom of the reaction chamber. The gas delivery system has a gas output end, which is connected to the gas inlets located on the side wall and top of the reaction chamber through pipelines, and is used to introduce gas into the reaction chamber. The control system is connected to the gas delivery system and is used to control the gas flow rate and pressure in the multiple pipelines. By setting multiple gas inlets on the top, bottom, and side wall of the reaction chamber, and by controlling the gas flow rate and pressure in the pipelines, it is possible to control the gas to be introduced into the reaction chamber from different directions, realizing multi-directional air intake, making the silicon carbide coating thickness distribution uniform, meeting processing requirements, and improving processing quality. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 A schematic diagram of the structure of a multi-directional air intake silicon carbide coating chemical vapor deposition device provided for an embodiment of this utility model;

[0028] Figure 2 A schematic diagram of a multi-directional air intake silicon carbide coating chemical vapor deposition device provided for another embodiment of the present invention;

[0029] Figure 3 A schematic diagram of a multi-directional air intake silicon carbide coating chemical vapor deposition device provided for another embodiment of the present invention;

[0030] Figure 4 for Figure 2 A schematic diagram of the rotary table structure of a multi-directional air intake silicon carbide coating chemical vapor deposition equipment is shown.

[0031] Figure 5 for Figure 4 A schematic diagram of the vertical cross-sectional structure of the rotary table.

[0032] Explanation of reference numerals in the attached figures:

[0033] 1. Chemical vapor deposition equipment body; 11. Reaction chamber; 12. Gas inlet; 2. Gas delivery system; 21. Piping; 3. Control system; 4. Mass flow controller; 5. Proportional control valve; 6. Pressure regulating valve; 7. Pressure sensor; 8. Branch pipe; 81. Valve; 9. Rotary table; 91. Arc-shaped rotating assembly; 911. Arc-shaped base; 912. Rolling element; 913. Support plate; 914. Top slide groove; 915. Bottom slide groove; 916. Protrusion; 10. Clamping assembly; 101. Base; 102. Left clamping plate; 103. Right clamping plate; 104. Connecting plate. Detailed Implementation

[0034] To make the technical problem to be solved, the technical solution, and the beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0035] Please refer to the following: Figures 1 to 5 This invention provides a multi-directional air intake silicon carbide coating chemical vapor deposition apparatus. The multi-directional air intake silicon carbide coating chemical vapor deposition apparatus includes a chemical vapor deposition apparatus body 1, a gas delivery system 2, and a control system 3. The chemical vapor deposition apparatus body 1 has a reaction chamber 11 for containing the substrate and gaseous reactants. Gas inlets 12 are provided on the side walls, top, and bottom of the reaction chamber 11. The gas delivery system 2 has a gas output end, which is connected to the gas inlets 12 located on the side walls and top of the reaction chamber 11 via pipes 21, and is used to introduce gas into the reaction chamber 11. The control system 3 is connected to the gas delivery system 2 and is used to control the gas flow rate and pressure in the multiple pipes 21, allowing gas to enter the reaction chamber 11 from multiple directions by adjusting the gas flow rate in the multiple pipes 21.

[0036] This invention provides a multi-directional air intake silicon carbide coating chemical vapor deposition equipment. Compared with the prior art, by setting multiple gas inlets 12 at the top, bottom and side walls of the reaction chamber 11, and by using the control system 3 to control the flow rate and pressure of the gas in the pipeline 21, it is possible to control the gas to be introduced into the reaction chamber 11 from different positions (i.e. different directions), thereby realizing multi-directional air intake into the reaction chamber 11, making the silicon carbide coating thickness distribution uniform, meeting the processing requirements and improving the processing quality.

[0037] When the gas inlet 12 on the reaction chamber 11 is not in use, it can be sealed or closed with a medium to ensure that a vacuum state can be achieved when a vacuum state is required inside the reaction chamber 11, thus meeting the usage requirements. The gas delivery system 2 in this embodiment (including a gas pump, controller, flow control module, start / stop control module, time control module, etc.) adopts existing technology and can realize the delivery of gas into the reaction chamber 11. By opening or closing multiple pipelines 21, that is, by controlling the gas flow rate in multiple pipelines 21, gas can be introduced into the reaction chamber 11 from multiple directions (when the flow rate is zero, it indicates that the pipeline 21 is in a closed state; when there is flow, it indicates that the pipeline 21 is in a closed state; by reasonably controlling the gas flow rate in the pipeline 21, gas can be introduced into the reaction chamber 11 from multiple directions).

[0038] The reaction chamber 11 is used to contain the substrate and gaseous reactants and is the main site for coating deposition. It is usually made of high-temperature resistant materials such as graphite or quartz and can withstand high-temperature reaction environments.

[0039] In this embodiment, gas is simultaneously introduced into the reaction chamber 11 through multiple gas inlets 12, achieving a more uniform gas distribution and thus a uniform thickness distribution of the silicon carbide coating. Its advantage is that it effectively avoids the problem of uneven gas distribution that may occur with a single inlet. This application allows for flexible adjustment of the gas flow rate and ratio of each gas inlet 12 according to different process requirements to achieve the optimal gas distribution effect. This multi-point gas inlet design can improve the uniformity and quality stability of the silicon carbide coating, making it suitable for applications with high performance requirements for the silicon carbide coating.

[0040] In addition to operating control of the gas delivery system 2, in some embodiments, please refer to Figures 1 to 3 Multiple pipelines 21 are equipped with mass flow controllers 4 and proportional control valves 5. The mass flow controllers 4 measure the gas flow rate within pipelines 21, and the proportional control valves 5 work in conjunction with the mass flow controllers 4 to control the gas flow rate within pipelines 21. Multiple pipelines 21 are also equipped with pressure regulating valves 6, and a pressure sensor 7 is installed inside the reaction chamber 11. The pressure regulating valves 6 regulate the gas pressure within pipelines 21, and the pressure sensor 7 monitors the gas pressure inside the reaction chamber 11 in real time. The mass flow controllers 4, pressure regulating valves 6, proportional control valves 5, and pressure sensor 7 are all electrically connected to the control system 3, and their operation is controlled by the control system 3. In this embodiment, the control system 3 can control not only the gas delivery system 2 but also the mass flow controllers 4, pressure regulating valves 6, proportional control valves 5, and pressure sensor 7, allowing them to operate in a coordinated manner to achieve reasonable and accurate regulation of the gas flow rate and pressure within the gas pipelines 21. In this embodiment, the regulation of the gas flow rate and pressure within pipelines 21 can be controlled separately.

[0041] The control system 3 in this embodiment includes a PLC controller, multiple control modules, and multiple control circuits, etc. The connection method between them can be referred to in the prior art. The multiple control modules are used to control the operation of the gas delivery system 2, mass flow controller 4, pressure regulating valve 6, proportional control valve 5 and pressure sensor 7 respectively.

[0042] The control system 3 of this application is also electrically connected to the gas delivery system 2 and is used to control the operation of the gas delivery system 2. The gas delivery system 2 is responsible for accurately delivering the gas into the reaction chamber 11 and for controlling the gas flow rate, ratio and velocity to ensure the stable progress of the reaction and the uniform deposition of the silicon carbide coating.

[0043] Specifically, the use and control methods of the mass flow controller 4 and the proportional control valve 5 are existing technologies and will not be described further here. The pressure sensor 7 can transmit the gas pressure inside the reaction chamber 11 to the control system 3. The control system 3 can reasonably control the operation of the pressure regulating valve 6 according to the current pressure value, so as to keep the gas pressure inside the pipeline 21 within the set range.

[0044] In some embodiments, please refer to Figures 1 to 3 The reaction chamber 11 has multiple rows of gas inlets 12 evenly distributed along its circumference on its sidewall. Each row of gas inlets 12 includes multiple gas inlets 12 and is evenly spaced along the height of the reaction chamber 11. The pipe 21 located between the gas output end and the sidewall of the reaction chamber 11, with its end near the reaction chamber 11, is connected to one of the multiple gas inlets 12 in one row through multiple branch pipes 8. In this embodiment, four rows of gas inlets 12 are evenly distributed along the circumference of the reaction chamber 11. Each row of gas inlets 12 includes multiple gas inlets 12 evenly distributed vertically. The size (or diameter) of the gas inlets 12 is the same or identical. By connecting or communicating the pipe 21 with gas inlets 12 at different positions, gas can be introduced into the reaction chamber 11 at different positions or in different directions, thus ensuring that the gas is evenly input into the reaction chamber 11.

[0045] Specifically, such as Figure 1-3 As shown, one end of each of the multiple branch pipes 8 is connected to one side of a vertically arranged manifold. The other end of each branch pipe 8 is used to connect to a corresponding gas inlet 12, while the other side of the manifold is used to connect to one end of the pipeline 21. The manifold is a rigid pipe that can combine the multiple branch pipes 8 into a single unit. The ends of the multiple branch pipes 8 that connect to the gas inlets 12 can be bent or deformed to facilitate connection with the gas inlets 12 via connectors or other components. The specific connection method can be found in existing technology and will not be described in detail here.

[0046] This invention is compatible with both traditional side-in / side-out horizontal airflow patterns and top-in / bottom-out vertical airflow patterns, as well as other multi-directional combination patterns. When using the side-in / side-out horizontal airflow pattern, the pipe 21 connecting the top and bottom of the reaction chamber 11 is closed, meaning the pipe 21 is controlled to be closed, and only the pipe 21 on the side wall is open. When using the top-in / bottom-out vertical airflow pattern, the pipe 21 connecting the side wall of the reaction chamber 11 is closed, meaning the pipe 21 is controlled to be closed, allowing the top pipe 21 of the reaction chamber 11 to open for gas input and the bottom gas inlet 12 to open for gas output. When using other multi-directional combination patterns, gas can be supplied to the interior of the reaction chamber 11 from multiple directions by appropriately opening and closing or controlling the on / off states of multiple pipes 21 and multiple gas inlets 12.

[0047] In this embodiment, each column of gas inlets 12 is set with four gas inlets at equal intervals, and each column of branch pipes 8 is also set with four branch pipes at equal intervals. Alternatively, the appropriate number of gas inlets 12 can be set according to the height or size of the reaction chamber 11. The number of gas inlets 12 in each column is the same as the number of branch pipes 8.

[0048] To achieve individual control of the on / off state of the gas inside multiple branch pipes 8, in some embodiments, please refer to... Figures 1 to 3 Multiple branch pipes 8 are interconnected to form an integral structure. Each branch pipe 8 is equipped with a valve 81, and all valves 81 are electrically connected to the control system 3 and their operation is controlled by the control system 3. The valve 81 is an electrically controlled valve, such as a flow control valve or an electric regulating valve. By operating the control system 3, the operation of one or more valves 81 can be controlled individually, thereby realizing the flow or disconnection of gas in one or more pipes 21, and thus controlling the flow rate of gas in pipes 21.

[0049] Specifically, the control system 3 is equipped with a control module that can control the operation of multiple valves 81.

[0050] To enable multiple branch pipes 8 to communicate with gas inlets 12 at different locations, in some embodiments, please refer to [reference needed]. Figures 2 to 4A rotary table 9 is provided around the outer side of the reaction chamber 11. The upper end of the rotary table 9 has a degree of freedom to rotate around the outer circumference of the reaction chamber 11. The branch pipes 8 located at the bottom are connected to the upper end of the rotary table 9. Multiple branch pipes 8 can be connected to a row of gas inlets 12 at different positions by means of the rotation of the rotary table 9. By controlling the rotation of the upper end of the rotary table 9, its upper end and multiple branch pipes 8 can rotate simultaneously. The direction of rotation is around the outer circumference of the reaction chamber 11. In this embodiment, the reaction chamber 11 is cylindrical. By moving multiple branch pipes 8 to a position aligned with a row of gas inlets 12, multiple branch pipes 8 can be connected to multiple gas inlets 12 one by one, and then gas can be introduced into the reaction chamber 11. When it is necessary to connect with a column of gas inlets 12 at another location, the branch pipe 8 is disassembled from the column of gas inlets 12. Then, the rotary table 9 is rotated to adjust the position of the branch pipe 8, so that it can be connected or docked with a column of gas inlets 12 at that location, so that gas can be input into the reaction chamber 11 from that location. The other column of gas inlets 12 can be opened to achieve side entry and side exit of gas.

[0051] In this invention, the diameter of the gas inlet 12 is matched with the diameter of the branch pipe 8 or the pipe 21, that is, the two can be connected or docked with each other. After connection or docking, the gas flow can be guaranteed and there will be no gas leakage, effectively ensuring the gas flow rate and pressure.

[0052] The rotary table 9 does not affect the normal operation of the reaction chamber 11 or the chemical vapor deposition equipment body 1 during operation. The installation and disassembly of the rotary table 9 are relatively convenient. It can flexibly adjust the connection between multiple branch pipes 8 and gas inlets 12 at different positions, thereby realizing the introduction of gas into the reaction chamber 11 from different directions or from multiple directions. This allows the silicon carbide coating on the three-dimensional complex matrix inside the reaction chamber 11 to be evenly distributed, that is, the thickness distribution of the coating is uniform, so as to improve the processing quality.

[0053] To facilitate the installation and disassembly of the rotary table 9, in some embodiments, please refer to... Figures 2 to 4The rotary table 9 includes multiple interconnected arc-shaped rotating components 91. These components are combined to form a ring, creating a gap between the rotating components 91 and the outer wall of the reaction chamber 11. The arc-shaped rotating components 91 are suitable for supporting the branch pipes 8 located at the bottom. The inner diameter of the rotary table 9 is larger than the outer diameter of the reaction chamber 11, allowing for easy assembly and placement outside the reaction chamber 11, thus enclosing it. Installing the rotary table 9 does not affect the normal operation of the chemical vapor deposition equipment body 1. Since the multiple branch pipes 8 are combined into a single unit, only the branch pipe 8 at the bottom needs to be connected to the upper end of the arc-shaped rotating component 91. The multiple branch pipes 8 move together or as a whole, rotating simultaneously with the upper end of the arc-shaped rotating component 91. That is, the branch pipes 8 do not move on the upper end of the arc-shaped rotating component 91. In this embodiment, there are four arc-shaped rotating components 91, each in the shape of a quarter-circle arc.

[0054] In some embodiments, please refer to Figures 2 to 5 The arc-shaped rotating assembly 91 includes an arc-shaped base 911, multiple rolling elements 912, and a support plate 913. The arc-shaped base 911 is arc-shaped, and a top groove 914 is provided at its upper end along its arc direction. The lower parts of the multiple rolling elements 912 are all disposed in the top groove 914 and have the freedom to roll along its extension direction within the top groove 914. The support plate 913 is arc-shaped, and a bottom groove 915 is provided at its lower end along its arc direction. The support plate 913 is placed on top of the multiple rolling elements 912 and is located directly above the arc-shaped base 911. The upper parts of the multiple rolling elements 912 are all placed inside the bottom groove 915. The branch pipe 8 located at the bottom is placed on top of the support plate 913. The multiple arc-shaped bases 911 are connected end to end to form an integral structure, and the multiple support plates 913 are connected end to end to form an integral structure and can rotate circumferentially with the help of the multiple rolling elements 912. The bottom end of the arc-shaped base 911 can be located on the same horizontal plane or at the same height as the bottom end of the reaction chamber 11. The rolling element 912 is a ball or sphere. When multiple arc-shaped bases 911 and multiple support plates 913 are combined into a whole, the support plates 913 can move on the upper ends of the multiple rolling elements 912. The direction of movement is a circumferential rotation around the reaction chamber 11 to adjust the position of the multiple branch pipes 8. When the position of the branch pipes 8 is adjusted and the position is reasonable, the rotation of the support plate 913 should be stopped.

[0055] Specifically, both the top groove 914 and the bottom groove 915 are concave arc-shaped groove structures, allowing the rolling element 912 to roll or move. Lubricating oil can also be applied to the rolling element 912 to reduce friction during rolling or movement. In this embodiment, triangular protrusions 916 are respectively provided on the upper end of the arc-shaped base 911 and on both sides of the rolling element 912. These protrusions 916 prevent dust, impurities, etc., from entering the top groove 914 and affecting the rolling of the rolling element 912. Similarly, triangular protrusions 916 are provided on the lower end of the support plate 913 and on both sides of the rolling element 912. The function of these protrusions 916 is the same as described above and will not be further explained here. The protrusions 916 do not affect the rolling of the rolling element 912 and do not contact the rolling element 912.

[0056] In this utility model, the length of the pipe 21 is not limited and can be reasonably set according to the actual situation.

[0057] In some embodiments, please refer to Figure 2 and Figure 4 A clamping assembly 10 is connected to the upper end of the rotary table 9. The clamping assembly 10 is used to clamp and fix the branch pipe 8 located at the bottom. Multiple branch pipes 8 can be adjusted to connect with gas inlets 12 at different positions by means of the rotation of the rotary table 9. The clamping assembly 10 is set on the upper end of a support plate 913, or it can be set on the upper end of the junction of two adjacent support plates 913, that is, on the upper end of two support plates 913. No matter where it is set, it will not affect the rotation of the support plates 913. That is, as long as the support plates 913 rotate, they can simultaneously drive the clamping assembly 10 to move, thereby adjusting the position of the branch pipe 8.

[0058] In some embodiments, please refer to Figure 2 and Figure 4 The clamping assembly 10 includes a base 101, a left clamping plate 102, and a right clamping plate 103. The lower end of the base 101 is connected to the upper end of the rotary table 9. The lower end of the left clamping plate 102 is detachably connected to the upper end of the base 101, and the upper end is semi-cylindrical. The lower end of the right clamping plate 103 is detachably connected to the upper end of the base 101, and the upper end is semi-cylindrical. It is arranged side by side with the left clamping plate 102. The semi-cylindrical shapes of the upper ends of the right clamping plate 103 and the upper ends of the left clamping plate 102 can be combined to form a cylindrical shape and form a clamping space suitable for clamping the branch pipe 8. The left clamp 102 and the right clamp 103 have the same structure. They are arranged side by side and opposite to each other, and can clamp and fix the branch pipe 8. When the bottom branch pipe 8 is fixed, all branch pipes 8 are fixed. The base 101 is detachably connected to the support plate 913 by fasteners. The lower ends of the left clamp 102 and the right clamp 103 are detachably connected to the upper end of the base 101 by fasteners. Of course, the position of the left clamp 102 or the right clamp 103 can be moved, so as to adjust the clamping and fixing of branch pipes 8 of different diameters.

[0059] Specifically, the semi-cylindrical shape has a certain length and can surround the middle part of the branch pipe 8 along its axial direction, so that the branch pipe 8 remains stable.

[0060] In some embodiments, please refer to Figure 2 and Figure 4 Both the left clamping plate 102 and the right clamping plate 103 have connecting plates 104 at their lower ends, and the connecting plates 104 are detachably connected to the upper end of the base 101. The connecting plates 104 are irregularly shaped, with a wider upper end and a narrower lower end, and are fixed to the upper end of the base 101 at the bottom by fasteners. When it is necessary to adjust the position of the connecting plates 104, they can be removed from the base 101 and reinstalled in other positions.

[0061] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A multi-directional air intake silicon carbide coating chemical vapor deposition apparatus, characterized in that, include: The chemical vapor deposition equipment body has a reaction chamber for containing a substrate and gaseous reactants, and gas inlets are provided on the sidewalls, top and bottom of the reaction chamber; A gas delivery system has a gas output end, which is connected to the gas inlets located on the side wall and top of the reaction chamber via pipelines, and is used to introduce gas into the reaction chamber. A control system is connected to the gas delivery system and is used to control the gas delivery flow rate and pressure in the multiple pipelines, and to introduce gas into the reaction chamber in multiple directions by adjusting the gas flow rate in the multiple pipelines.

2. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 1, characterized in that, Each of the multiple pipelines is equipped with a mass flow controller and a proportional control valve. The mass flow controller measures the gas flow rate within the pipeline, and the proportional control valve works in conjunction with the mass flow controller to control the gas flow rate within the pipeline. Each of the multiple pipelines is also equipped with a pressure regulating valve, and a pressure sensor is installed inside the reaction chamber. The pressure regulating valve regulates the gas pressure within the pipeline, and the pressure sensor monitors the gas pressure inside the reaction chamber in real time. The mass flow controller, the pressure regulating valve, the proportional control valve, and the pressure sensor are all electrically connected to the control system, and their operation is controlled by the control system.

3. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 1, characterized in that, The sidewall of the reaction chamber is evenly distributed with multiple rows of gas inlets along its circumference. Each row of gas inlets includes multiple gas inlets and is equally spaced along the height of the reaction chamber. The pipeline located between the gas output end and the sidewall of the reaction chamber, with its end near the reaction chamber, is connected to one of the multiple gas inlets in one row via multiple branch pipes.

4. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 3, characterized in that, Multiple branch pipes are interconnected to form an integral structure. Each branch pipe is equipped with a valve, and each valve is electrically connected to the control system and its operation is controlled by the control system.

5. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 3, characterized in that, A rotary table is provided around the outside of the reaction chamber. The upper end of the rotary table has a degree of freedom to rotate around the outer circumference of the reaction chamber. The branch pipe located at the bottom is connected to the upper end of the rotary table. Multiple branch pipes can be connected to a row of gas inlets at different positions by means of the rotation of the rotary table.

6. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 5, characterized in that, The rotary table includes multiple arc-shaped rotating components connected end to end. The multiple arc-shaped rotating components are combined to form a ring and form a gap with the outer wall of the reaction chamber. The arc-shaped rotating components are adapted to support the branch pipe located at the bottom.

7. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 6, characterized in that, The arc-shaped rotating component includes: The base is arc-shaped, and a top groove is provided at the upper end along the arc direction. Multiple rolling elements, each having a lower part disposed within the top sliding groove and having a degree of freedom to roll within the top sliding groove along its extending direction; The support plate is arc-shaped and has a bottom groove along its arc direction at the lower end. The support plate is placed on the upper end of the multiple rolling elements and is located directly above the arc-shaped base. The upper parts of the multiple rolling elements are all placed inside the bottom groove. The branch pipe at the bottom is placed on the upper end of the support plate. The multiple arc-shaped base pieces are connected end to end to form an integral structure, and the multiple support plates are connected end to end to form an integral structure, which can rotate circumferentially with the help of multiple rolling elements.

8. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 6, characterized in that, A clamping assembly is connected to the upper end of the rotary table. The clamping assembly is used to clamp and fix the branch pipe located at the bottom. The multiple branch pipes can be adjusted to communicate with the gas inlet at different positions by means of the rotation of the rotary table.

9. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 8, characterized in that, The clamping assembly includes: The base is connected at its lower end to the upper end of the rotary table; The left clamping plate is detachably connected to the upper end of the base at its lower end, and its upper end is semi-cylindrical. The right clamp plate is detachably connected to the upper end of the base at its lower end and is semi-cylindrical at its upper end. It is arranged side by side with the left clamp plate. The upper end of the right clamp plate and the upper end of the left clamp plate can be combined to form a cylindrical shape and create a clamping space suitable for clamping the branch pipe.

10. The multi-directional air intake silicon carbide coating chemical vapor deposition equipment as described in claim 9, characterized in that, Both the left and right clamping plates have connecting plates at their lower ends, and the connecting plates are detachably connected to the upper end of the base.

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