A heat dissipation type field-effect transistor
By employing an integrated L-shaped heat sink and a high thermal conductivity insulating layer in the field-effect transistor, the problems of low heat dissipation efficiency and large space occupation are solved, achieving efficient heat dissipation and equipment miniaturization.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- GUANGDONG LEEHOM MICROELECTRONICS CO LTD
- Filing Date
- 2025-08-26
- Publication Date
- 2026-06-30
AI Technical Summary
Existing field-effect transistors have long heat dissipation paths, high thermal resistance, and limited heat dissipation efficiency. They also require additional heat sinks and insulating pads, which increases costs and PCB board space requirements, hindering the miniaturization and high-density integration of devices.
A heat-dissipating MOSFET comprising a die, lead frame, and encapsulation body was designed. It adopts an integrated L-shaped heat sink, which rapidly conducts heat to the vertical heat dissipation part through a high thermal conductivity insulating medium layer. Heat dissipation fins are set in the vertical part to increase the heat dissipation area, and it is directly fixed to the chassis or heat sink plate.
It achieves efficient heat dissipation, reduces thermal resistance, reduces installation complexity and space occupation, and is conducive to the miniaturization and high-density layout of equipment.
Smart Images
Figure CN224439593U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of field-effect transistor (FET) technology, specifically to a heat-dissipating FET. Background Technology
[0002] As a core switching element in modern electronic devices, the field-effect transistor (MOSFET) generates a large amount of heat during operation, especially under high-current switching conditions. If the heat cannot be dissipated in time, the junction temperature of the die will rise rapidly, leading to device performance degradation, decreased reliability, or even burnout.
[0003] Traditional field-effect transistors (FETs) in packages such as TO-220 and D-PAK primarily rely on their own metal plates or external heat sinks for heat dissipation. This presents several problems: 1. Long heat dissipation paths, high thermal resistance, and limited heat dissipation efficiency; 2. The need for additional heat sinks and insulating pads, increasing assembly steps and costs; 3. The overall structure occupies significant PCB space, hindering miniaturization and high-density integration of electronic devices. Utility Model Content
[0004] (I) Technical Issues
[0005] The purpose of this invention is to overcome the shortcomings of the prior art and provide a heat-dissipating field-effect transistor that is compact, has high heat dissipation efficiency, and is easy to install.
[0006] (II) Technical Content
[0007] To solve the above-mentioned technical problems, the technical solution of this utility model is as follows: a heat-dissipating field-effect transistor, comprising a die, a lead frame, and a molding compound. The lead frame includes a chip carrier island and multiple pins. The die is fixedly bonded to the chip carrier island and electrically connected to the corresponding pins via bonding wires. An integrated heat sink is provided on the lower surface of the chip carrier island. The integrated heat sink has an "L"-shaped structure, including a horizontal part and a vertical part. The horizontal part is tightly fitted and fixed to the lower surface of the chip carrier island, and the vertical part extends upward and is exposed outside the molding compound. The molding compound covers the die, the chip carrier island, and the horizontal part. The outer side of the vertical part is flush with or protrudes from the side of the molding compound.
[0008] Furthermore, a highly thermally conductive insulating dielectric layer is filled between the lower surface of the chip carrier island and the horizontal portion of the integrated heat sink.
[0009] Furthermore, the high thermal conductivity insulating medium layer is a thermally conductive insulating adhesive or a ceramic sheet.
[0010] Furthermore, at least one mounting hole is provided on the vertical portion of the integrated heat sink.
[0011] Furthermore, the inner side of the vertical portion of the integrated heat sink is provided with several heat dissipation fins.
[0012] Furthermore, the integrated heat sink is made of copper or aluminum alloy.
[0013] (III) Technical Effects
[0014] Compared with existing technologies, this invention has the following advantages: Through the design of an integrated "L"-shaped heat sink, the heat generated by the die is conducted to the vertical heat dissipation section with a large surface area via the shortest path, greatly reducing the overall thermal resistance and achieving heat dissipation efficiency far exceeding traditional packaging methods. Integrating the heat dissipation function with the device body eliminates the need for external heat sinks and insulating pads, significantly reducing the overall footprint on the PCB board and facilitating miniaturization and high-density layout. The exposed vertical heat dissipation section has mounting holes, allowing for direct screw mounting to the chassis or heat sink plate, ensuring stable and convenient installation. Attached Figure Description
[0015] Figure 1 This is a three-dimensional structural diagram of a heat-dissipating field-effect transistor according to this utility model.
[0016] Figure 2 This is a schematic diagram of the main structure of a heat-dissipating field-effect transistor according to this utility model.
[0017] Figure 3 This is a schematic diagram of the internal structure of a heat-dissipating field-effect transistor according to this utility model.
[0018] Figure 4 This is a schematic diagram of the cross-sectional structure of a heat-dissipating field-effect transistor according to this utility model.
[0019] As shown in the figure: 1. Die; 2. Chip carrier island; 3. Molded package; 4. Pins; 5. Integrated heat sink; 6. High thermal conductivity insulating layer; 51. Horizontal part; 52. Vertical part; 53. Mounting hole; 54. Heat sink fins. Detailed Implementation
[0020] In the description of this utility model, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inner", "outer", "center", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation structure and operation. Therefore, they should not be construed as limitations on this utility model.
[0021] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "provided with," "installed," "connected," "linked," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0022] The present invention will now be described in further detail with reference to the accompanying drawings.
[0023] Combined with appendix Figure 1 To be continued Figure 4 A heat-dissipating field-effect transistor includes a die 1, a lead frame, and a molding compound 3. The lead frame includes a chip carrier island 2 and multiple pins 4. The die 1 is fixedly bonded to the chip carrier island 2 and electrically connected to the corresponding pins 4 via bonding wires. An integrated heat sink 5 is provided on the lower surface of the chip carrier island 2. The integrated heat sink 5 has an "L"-shaped structure and includes a horizontal portion 51 and a vertical portion 52. The horizontal portion 51 is tightly fitted and fixed to the lower surface of the chip carrier island 2, and the vertical portion 52 extends upward and is exposed outside the molding compound 3. The molding compound 3 covers the die 1, the chip carrier island 2, and the horizontal portion 51. The outer side of the vertical portion 52 is flush with or protrudes from the side of the molding compound 3.
[0024] A high thermal conductivity insulating medium layer 6 is filled between the lower surface of the chip carrier island 2 and the horizontal part 51 of the integrated heat sink 5. The high thermal conductivity insulating medium layer 6 is a thermally conductive insulating adhesive or a ceramic sheet.
[0025] The integrated heat sink 5 has at least one mounting hole 53 on its vertical portion 52, and a plurality of heat dissipation fins 54 are provided on the inner side of the vertical portion 52 of the integrated heat sink 5. The integrated heat sink 4 is made of copper or aluminum alloy.
[0026] The working principle of this invention is as follows: When the field-effect transistor is connected to the circuit and is in operation, the conductive channel inside the die 1 will generate a large amount of heat due to resistance loss and switching loss. This heat will first accumulate inside the die 1, causing the junction temperature of the die 1 to rise rapidly. To avoid the junction temperature being too high and affecting performance, this design constructs the shortest heat dissipation path through an "L"-shaped integrated heat sink 5. That is, the heat generated by the die 1 is first transferred to the chip carrier island 2, which is in direct contact with it, through thermal conduction. Then, the heat passes through the high thermal conductivity insulating medium layer 6 and is transferred to the horizontal part 51 of the integrated heat sink 5. Since the horizontal part 51 and the vertical part 52 are an integrated structure, the heat can be quickly conducted to the vertical part 52. The outer surface of the vertical part 52 directly convects with the air to dissipate heat. The heat dissipation fins 54 on the inner side of the vertical part 52 increase the contact area with the air and accelerate the convective heat dissipation. If the vertical part 52 is fixed to the chassis heat sink plate through the mounting hole 53, the heat can also be transferred to the heat sink plate through thermal conduction to achieve more efficient forced heat dissipation.
[0027] The present invention and its embodiments have been described above. This description is not restrictive, and the accompanying drawings are only one embodiment of the present invention; the actual structure is not limited thereto. In conclusion, if those skilled in the art are inspired by this description and design similar structures and embodiments without departing from the inventive spirit of the present invention, such designs should fall within the protection scope of the present invention.
Claims
1. A heat-dissipating field-effect transistor, comprising a die (1), a lead frame, and a molding compound (3), wherein the lead frame includes a chip carrier island (2) and a plurality of pins (4), the die (1) is fixedly bonded to the chip carrier island (2) and electrically connected to the corresponding pins (4) via bonding wires, characterized in that: The chip carrier island (2) has an integrated heat sink (5) on its lower surface. The integrated heat sink (5) has an "L" shaped structure, including a horizontal part (51) and a vertical part (52). The horizontal part (51) is tightly attached to the lower surface of the chip carrier island (2), and the vertical part (52) extends upward and is exposed outside the plastic package (3). The encapsulation body (3) covers the die (1), the chip carrier island (2) and the horizontal portion (51), and the outer side of the vertical portion (52) is flush with or protrudes from the side of the encapsulation body (3).
2. A heat dissipating field effect transistor according to claim 1, wherein: A high thermal conductivity insulating medium layer (6) is filled between the lower surface of the chip carrier island (2) and the horizontal part (51) of the integrated heat sink (5).
3. A heat spreader field effect transistor according to claim 2, wherein: The high thermal conductivity insulating medium layer (6) is a thermally conductive insulating adhesive or a ceramic sheet.
4. A heat-dissipating MOSFET according to claim 1, characterized in that: At least one mounting hole (53) is provided on the vertical portion (52) of the integrated heat sink (5).
5. A heat-dissipating MOSFET according to claim 4, characterized in that: The inner side of the vertical portion (52) of the integrated heat sink (5) is provided with a plurality of heat dissipation fins (54).
6. A heat-dissipating MOSFET according to claim 1, characterized in that: The integrated heat sink (5) is made of copper or aluminum alloy.