Semiconductor LED light emitting structure
By introducing arrayed microchannels, thermally conductive media, and interface roughening layers into the semiconductor LED light-emitting structure, combined with ceramic matrix composite materials, the problem of insufficient heat dissipation was solved, achieving efficient heat transfer and stable operation of LED devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- WUXI XINSHIJIA SEMICON TECH CO LTD
- Filing Date
- 2025-09-05
- Publication Date
- 2026-07-21
AI Technical Summary
Existing semiconductor LED light-emitting structures and MicroLED chips lack effective heat dissipation during use, leading to heat accumulation that causes performance degradation and shortens lifespan.
The design employs an array of microchannels, a thermally conductive medium, and an interface roughening layer to enhance heat dissipation. Heat is rapidly transferred through the thermally conductive medium within the microchannels, and the interface roughening layer reduces interfacial thermal resistance. Combined with a ceramic matrix composite material as the heat dissipation substrate, heat transfer efficiency is improved.
It significantly improves heat dissipation efficiency, extends the lifespan of LED devices, ensures the stability of luminous efficiency and the uniformity of light output, and avoids performance degradation caused by heat accumulation.
Smart Images
Figure CN224538662U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of LED chip technology, and more specifically to a semiconductor LED light-emitting structure. Background Technology
[0002] Semiconductor LEDs (light-emitting diodes) are important solid-state light-emitting devices, widely used in modern lighting, displays, optical communications, and many other fields. Their working principle is based on the electroluminescence effect of semiconductors. When a forward voltage is applied across the PN junction, electrons in the N-region and holes in the P-region recombine in the active layer, releasing energy in the form of photons, thus producing light emission.
[0003] Chinese Patent Publication No. CN218004893U discloses a semiconductor LED light-emitting structure and a MicroLED chip. The semiconductor LED light-emitting structure includes an epitaxial layer comprising a first nitride layer, a semiconductor light-emitting layer, and a second nitride layer. The substrate has a first orthographic projection, and a second orthographic projection is located inside the first orthographic projection with non-overlapping edges. The first nitride layer has a first portion and a second portion. The first portion has a second orthographic projection, and the second portion has a third orthographic projection, with the second orthographic projection located inside the third orthographic projection with non-overlapping edges. The semiconductor LED light-emitting structure and MicroLED chip provided by this invention, by setting a protrusion that does not contact the substrate, avoids the quantum efficiency degradation caused by severe sidewall surface damage due to traditional cutting, and greatly improves the light extraction efficiency of the MicroLED chip.
[0004] In the existing technology, in the use of a semiconductor LED light-emitting structure and a MicroLED chip, no heat dissipation element is provided for the heat generated by the LED device during operation. The LED generates heat during the light-emitting process. If the heat cannot be dissipated in time, it may cause the local temperature of the device to rise, which may lead to performance degradation (such as decreased luminous efficiency, wavelength shift, etc.) and even shorten the lifespan of the device. Therefore, we make improvements to this and propose a semiconductor LED light-emitting structure. Utility Model Content
[0005] The purpose of this invention is to address the problem that current semiconductor LED light-emitting structures and MicroLED chips lack heat dissipation capabilities.
[0006] To achieve the above-mentioned objectives, this utility model provides the following technical solution:
[0007] A semiconductor LED light-emitting structure, through the design of array microchannels, thermally conductive medium and interface roughening layer, is specially enhanced to improve heat dissipation, which can efficiently transfer heat and reduce thermal resistance, thereby improving the above-mentioned problems.
[0008] The application is as follows:
[0009] A semiconductor LED light-emitting structure includes a substrate layer. An N-type semiconductor layer, an active layer, a P-type semiconductor layer, and an electrode layer are sequentially disposed on the substrate layer from bottom to top. An interface roughening layer is disposed on the side of the substrate layer away from the N-type semiconductor layer. A heat dissipation substrate is connected to the side of the interface roughening layer away from the substrate layer. A plurality of microchannels are formed inside the heat dissipation substrate. The microchannels are filled with a thermally conductive medium. The plurality of microchannels are arranged in an array within the heat dissipation substrate.
[0010] As a preferred technical solution of this application, the cross-section of some of the microchannels is a regular hexagon;
[0011] As a preferred technical solution of this application, the heat dissipation substrate is made of ceramic matrix composite material;
[0012] As a preferred technical solution of this application, the surface of the interface roughening layer is roughened, and the interface roughening layer is prepared by plasma etching process;
[0013] As a preferred technical solution of this application, the heat-conducting medium is liquid metal;
[0014] As a preferred technical solution of this application, the electrode layer includes a P-type electrode and an N-type electrode. The P-type electrode is disposed on the side of the P-type semiconductor layer away from the active layer, and the N-type electrode is disposed on the top of the active layer and located on the side of the P-type semiconductor layer. The N-type electrode is connected to the N-type semiconductor layer through a wire, and a thermally conductive coating is disposed on the surface of both the P-type electrode and the N-type electrode.
[0015] Compared with the prior art, the beneficial effects of this utility model are as follows:
[0016] In the scheme of this application:
[0017] (1) The heat dissipation area and heat exchange efficiency are increased by the array of microchannels and the filling thermal conductive medium. At the same time, the thermal conductive medium can contact the interior of the heat dissipation substrate more evenly, quickly transfer the heat generated when the LED is working, avoid performance degradation caused by local overheating, and increase the contact area between the substrate and the heat dissipation substrate by setting the interface roughening layer, reducing the interface thermal resistance, so that the heat conducted by the substrate can be transferred to the heat dissipation substrate more efficiently, further enhancing the heat dissipation capacity of the structure and extending the service life of the LED device.
[0018] (2) By directly setting the P-type electrode on the surface of the P-type semiconductor layer and connecting the N-type electrode to the N-type semiconductor layer through the wire, this layout allows the current to be injected into the P-type and N-type semiconductor layers efficiently, ensuring that electrons and holes fully recombine in the active layer, reducing current transmission loss, improving the electro-optical conversion efficiency of the LED, ensuring the stability of the luminous intensity, and the design of the N-type electrode located on the side of the P-type semiconductor layer avoids the direct blocking of the light-emitting area of the active layer by the electrode, reducing the physical obstacles to light output and helping to improve the light extraction efficiency. Attached Figure Description
[0019] Figure 1 This is a three-dimensional structural diagram of the present invention;
[0020] Figure 2 This is a front cross-sectional view of the present invention.
[0021] Explanation of reference numerals in the accompanying drawings: 1. Substrate layer; 2. N-type semiconductor layer; 3. Active layer; 4. P-type semiconductor layer; 5. Electrode layer; 501. P-type electrode; 502. N-type electrode; 6. Interface roughening layer; 7. Heat dissipation substrate; 8. Microchannel; 9. Thermal conductive medium. Detailed Implementation
[0022] The present invention will be further described in detail below with reference to the accompanying drawings.
[0023] This specific embodiment is merely an explanation of the present utility model and is not intended to limit the present utility model. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but as long as they are within the scope of the claims of the present utility model, they are protected by patent law.
[0024] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.
[0025] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.
[0026] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0027] In this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0028] Example 1: Please refer to the appendix of the instruction manual. Figure 1 -2, a semiconductor LED light-emitting structure, including a substrate layer 1, an N-type semiconductor layer 2, an active layer 3, a P-type semiconductor layer 4 and an electrode layer 5 are disposed sequentially from bottom to top on the substrate layer 1, an interface roughening layer 6 is disposed on the side of the substrate layer 1 away from the N-type semiconductor layer 2, a heat dissipation substrate 7 is connected to the side of the interface roughening layer 6 away from the substrate layer 1, a plurality of microchannels 8 are formed inside the heat dissipation substrate 7, the microchannels 8 are filled with a thermally conductive medium 9, and the plurality of microchannels 8 are arranged in an array in the heat dissipation substrate 7.
[0029] In this embodiment of the invention, when the LED device is powered on, current is injected into the N-type semiconductor layer 2 and the P-type semiconductor layer 4 through the electrode layer 5. Electrons and holes recombine in the active layer 3 and release energy, which is then radiated out in the form of light. During this process, the active layer 3 generates a large amount of heat. The heat is transferred through the substrate layer 1 to the interface roughening layer 6, and then conducted to the heat dissipation substrate 7. The microchannels 8 in the heat dissipation substrate 7 quickly disperse the heat to the entire substrate through the thermal conduction of the thermally conductive medium 9, achieving large-area heat dissipation. The array-distributed microchannels 8 can uniformly receive heat, avoiding local heat accumulation.
[0030] In this embodiment of the invention, the heat dissipation efficiency of the LED device is significantly improved through the synergistic effect of the multi-level heat dissipation structure, the operating temperature of the active layer 3 is effectively reduced, the light decay caused by high temperature is reduced, the service life of the device is extended, and the stability of the luminous efficiency is guaranteed. The design of the array-type microchannel 8 maximizes the heat dissipation area, further enhances the heat dissipation effect, and ensures that the LED device can still operate stably under high power conditions.
[0031] Example 2: Please refer to the appendix of the instruction manual. Figure 1 -2. As a preferred embodiment of the present invention, the cross-section of the microchannels 8 is a regular hexagon, the spacing between two adjacent microchannels 8 is 50-100μm, and the distance between opposite sides of the microchannels 8 is 20-50μm.
[0032] The heat dissipation substrate 7 is made of ceramic matrix composite material.
[0033] The surface of the interface roughening layer 6 is roughened. The interface roughening layer 6 is prepared by plasma etching process. The surface roughness of the interface roughening layer 6 is 1-5 μm and the thickness of the interface roughening layer 6 is 5-10 μm.
[0034] The heat transfer medium 9 is liquid metal.
[0035] The electrode layer 5 includes a P-type electrode 501 and an N-type electrode 502. The P-type electrode 501 is disposed on the side of the P-type semiconductor layer 4 away from the active layer 3, and the N-type electrode 502 is disposed on the top of the active layer 3 and located on the side of the P-type semiconductor layer 4. The N-type electrode 502 is connected to the N-type semiconductor layer 2 through a wire. Both the P-type electrode 501 and the N-type electrode 502 are provided with a thermally conductive coating.
[0036] In this embodiment of the invention, the microchannels 8 with a regular hexagonal cross-section are closely spaced, with the spacing between adjacent channels controlled at 50-100 μm and the distance between opposite sides at 20-50 μm. This dimensional design ensures both the structural strength between the channels and allows the heat-conducting medium 9 to form an efficient heat conduction path within the channels. The regular hexagonal structure shortens the heat transfer path between adjacent channels, reduces the resistance to heat transfer in the heat-conducting medium 9, and the reasonable spacing avoids thermal interference between channels.
[0037] Beneficial effects: The hexagonal microchannel structure 8 achieves maximum space utilization, accommodating more channels within the limited heat dissipation substrate 7, increasing the heat dissipation area. Specific dimensional parameters ensure the fluidity and thermal conductivity of the heat-conducting medium 9, enabling rapid and uniform heat diffusion. This optimized design improves heat dissipation performance without reducing the mechanical strength of the heat dissipation substrate 7 due to excessive channel density, thus balancing heat dissipation effect and structural stability.
[0038] In this embodiment of the invention, the heat dissipation substrate 7 is made of ceramic matrix composite material, which has excellent thermal conductivity and high temperature resistance. When heat is transferred to the heat dissipation substrate 7, the ceramic matrix composite material can quickly diffuse the heat from around the microchannel 8 to the entire substrate. At the same time, its high temperature resistance ensures that it will not deform or degrade in a long-term high temperature environment.
[0039] Beneficial effects: The high thermal conductivity of the ceramic matrix composite material further enhances the heat dissipation capacity of the heat dissipation substrate 7, forming a highly efficient heat dissipation system in conjunction with the microchannel 8 and the thermally conductive medium 9. Furthermore, this material also possesses good insulation and chemical stability, preventing the heat dissipation substrate 7 from interfering with the electrical performance of LED devices and improving the overall structural reliability.
[0040] In this embodiment of the present invention, the interface roughening layer 6 is prepared by plasma etching process, with surface roughness controlled at 1-5 μm and thickness at 5-10 μm. The rough surface increases the contact area with the substrate layer 1 and the heat dissipation substrate 7, allowing heat to be conducted through more contact points during the transfer process, reducing the interface thermal resistance. The microstructure formed by the plasma etching process makes the interface bonding tighter, further reducing the resistance to heat transfer.
[0041] Beneficial effects: The design of the interface roughening layer 6 effectively reduces the interfacial thermal resistance between the substrate layer 1 and the heat dissipation substrate 7, improving heat transfer efficiency. Specific surface roughness and thickness parameters ensure thermal conductivity without affecting the structural integrity of the substrate layer 1, thus ensuring unobstructed heat transfer paths.
[0042] In this embodiment of the invention, liquid metal serves as the heat-conducting medium 9, possessing extremely high thermal conductivity and excellent fluidity. Within the microchannel 8, the liquid metal can rapidly absorb heat and transfer it to various parts of the heat dissipation substrate 7 through its own flow. Its fluidity ensures the formation of natural convection under the influence of the temperature gradient, accelerating heat diffusion.
[0043] Beneficial effects: The high thermal conductivity of liquid metal significantly improves the heat dissipation efficiency of microchannel 8, resulting in an order-of-magnitude increase in heat dissipation capacity. The good fluidity allows the thermally conductive medium 9 to fully fill every corner of microchannel 8, avoiding heat dissipation dead zones caused by uneven medium distribution and ensuring the uniformity and stability of heat dissipation.
[0044] In this embodiment of the invention, the electrode layer 5 is composed of a P-type electrode 501 and an N-type electrode 502. The P-type electrode 501 is directly disposed on the surface of the P-type semiconductor layer 4, and the N-type electrode 502 is connected to the N-type semiconductor layer 2 through a wire. This arrangement ensures uniform current injection. The thermally conductive coating on the electrode surface can quickly transfer the heat generated when the electrode is working to the surrounding structure, and then dissipate it through the heat dissipation system.
[0045] Beneficial effects: The reasonable electrode layout reduces current congestion, lowers Joule heat loss of the electrodes, and improves the efficiency of converting electrical energy into light energy. The design of the thermally conductive coating enhances the heat dissipation capacity of the electrodes, avoids the influence of electrode overheating on their conductivity, and further ensures the overall stability and reliability of LED devices.
[0046] The above description is merely a preferred embodiment of the present utility model and is not intended to limit the present utility model in any way. Any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present utility model shall fall within the scope of the technical solution of the present utility model.
Claims
1. A semiconductor LED light-emitting structure, comprising a substrate layer (1), characterized in that, The substrate (1) is provided with an N-type semiconductor layer (2), an active layer (3), a P-type semiconductor layer (4) and an electrode layer (5) arranged sequentially from bottom to top. An interface roughening layer (6) is provided on the side of the substrate (1) away from the N-type semiconductor layer (2). A heat dissipation substrate (7) is connected to the side of the interface roughening layer (6) away from the substrate (1). A plurality of microchannels (8) are formed inside the heat dissipation substrate (7). The microchannels (8) are filled with a thermally conductive medium (9). The plurality of microchannels (8) are arranged in an array in the heat dissipation substrate (7).
2. The semiconductor LED light-emitting structure according to claim 1, characterized in that, The cross-section of some of the microchannels (8) is a regular hexagon.
3. The semiconductor LED light-emitting structure according to claim 1, characterized in that, The heat dissipation substrate (7) is made of ceramic matrix composite material.
4. The semiconductor LED light-emitting structure according to claim 1, characterized in that, The surface of the interface roughening layer (6) is roughened, and the interface roughening layer (6) is prepared by plasma etching process.
5. A semiconductor LED light-emitting structure according to claim 1, characterized in that, The heat-conducting medium (9) is liquid metal.
6. The semiconductor LED light-emitting structure according to claim 1, characterized in that, The electrode layer (5) includes a P-type electrode (501) and an N-type electrode (502). The P-type electrode (501) is disposed on the side of the P-type semiconductor layer (4) away from the active layer (3). The N-type electrode (502) is disposed on the top of the active layer (3) and located on the side of the P-type semiconductor layer (4). The N-type electrode (502) is connected to the N-type semiconductor layer (2) through a wire. The surfaces of the P-type electrode (501) and the N-type electrode (502) are both provided with a thermally conductive coating.