Substrate processing apparatus

Abstract

A substrate processing apparatus includes a chamber in which a substrate is disposed, an outer air supply pipe connected to a first side of the chamber and extending into the chamber, a gas supply pipe disposed inside the outer air supply pipe, a mesh filter disposed inside the outer air supply pipe and between an end of the gas supply pipe and an end of the outer air supply pipe, and a plurality of first exhaust pipes connected to a second side of the chamber opposite the first side and extending into the chamber.

Description

[0001] This application claims priority to and all benefits derived therefrom of Korean Patent Application No. 10-2024-0091105, filed on July 10, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to a substrate processing apparatus. Background Technology

[0003] Electronic devices that provide images to users, such as smartphones, digital cameras, laptops, navigation units, and smart TVs, include display devices for displaying images. These display devices generate images and provide them to the user via a screen.

[0004] Recently, with the development of technologies for display devices, various types of display devices are being developed. For example, various flexible display devices that can be deformed into curved shapes, foldable, or rollable are being developed. Flexible display devices with various deformable shapes are easy to carry and improve user convenience.

[0005] A flexible display device includes a flexible substrate and multiple pixels arranged on the flexible substrate. The flexible substrate is manufactured by coating a plastic material onto a glass substrate and then curing the plastic material. This process is defined as a substrate processing process. Utility Model Content

[0006] Smoke is generated during the curing process of plastic materials, so there is a need to develop a technology for easy smoke removal.

[0007] This disclosure provides a substrate processing apparatus that can prevent substrate contamination by easily removing fumes generated during the substrate processing process.

[0008] One embodiment of the inventive concept provides a substrate processing apparatus, comprising: a chamber in which a substrate is disposed; an external air supply pipe connected to a first side of the chamber and extending into the chamber; a gas supply pipe disposed inside the external air supply pipe; a mesh filter disposed inside the external air supply pipe and between an end of the gas supply pipe and an end of the external air supply pipe; and a plurality of first discharge pipes connected to a second side of the chamber opposite to the first side and extending into the chamber.

[0009] In one embodiment of the inventive concept, a substrate processing apparatus includes: a chamber in which a substrate is disposed; an external air supply pipe connected to a first side of the chamber and extending into the chamber; a gas supply pipe disposed inside the external air supply pipe; a plurality of first discharge pipes connected to a second side of the chamber opposite to the first side and extending into the chamber; and a plurality of discharge valves outside the chamber, each connected to one of the first discharge pipes, wherein the plurality of discharge valves control the opening rate of a channel inside the plurality of first discharge pipes, and the opening rate of the channel inside the plurality of first discharge pipes gradually increases towards the upper portion. Attached Figure Description

[0010] The accompanying drawings are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the inventive concept and, together with the description, serve to explain the principles of the inventive concept. In the drawings:

[0011] Figure 1 This is a perspective view of an embodiment of a substrate processing apparatus according to the inventive concept;

[0012] Figures 2 to 5 For example, including by Figure 1 A diagram illustrating a display device using a substrate manufactured by a substrate processing equipment;

[0013] Figure 6 A diagram illustrating a method for manufacturing flexible substrates;

[0014] Figure 7 Example settings Figure 6 A diagram illustrating the arrangement of pixels on a flexible substrate;

[0015] Figure 8 and Figure 9 For along Figure 1 The cross-sectional view taken by line I-I' is illustrated in the figure and is used to schematically describe the substrate processing technology;

[0016] Figure 10 and Figure 11 For along Figure 1 The cross-sectional view taken from line II-II' is shown in the example.

[0017] Figure 12 For separate examples Figure 10 and Figure 11 The diagram illustrates the first and second gas supply pipes.

[0018] Figure 13 for Figure 10 The image shows a perspective view of a grid filter.

[0019] Figure 14 For use in describing Figure 13 The diagram illustrates the configuration of the mesh filter connected to the corresponding first external air supply pipe;

[0020] Figure 15 A diagram illustrating an embodiment of the arrangement of a grid filter according to the inventive concept;

[0021] Figure 16 for Figure 1 Side view of the emission section shown in the example;

[0022] Figure 17 For along Figure 1 The cross-sectional view taken from line Ⅲ-Ⅲ' is shown in the example;

[0023] Figure 18 For example Figure 1 The diagram illustrates the common exhaust pipe, smoke trap, second pressure measuring section, and common exhaust valve.

[0024] Figure 19 Example settings Figure 18 A diagram illustrating the baffle membrane of the common discharge valve inside the common discharge pipe;

[0025] Figure 20 To set Figure 8 An exploded perspective view of a first support portion and a second support portion below a substrate, as well as a roller, is shown in the illustration; and

[0026] Figure 21 This diagram illustrates the operation of the first and second support rods entering and exiting the chamber via rollers. Detailed Implementation

[0027] In this specification, it will be understood that when an element (or area, layer, section, etc.) is referred to as being "on" another element, "connected to" or "attached to" another element, it may be directly set / connected / attached to the other element, or an intermediary element may be set between them.

[0028] The same reference numerals or symbols refer to the same elements throughout the drawings. Moreover, in order to effectively describe the technical content, the scale and dimensions (e.g., thickness) of the elements are enlarged in the drawings.

[0029] The term “and / or” includes all combinations of one or more of the related enumerated elements.

[0030] Although the terms "first," "second," etc., can be used to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of the inventive concept, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. Unless the context clearly indicates otherwise, the singular form also includes the plural form.

[0031] Furthermore, terms such as "below," "down," "above," and "upper" are used in the specification to describe the relationship between one element and another illustrated in the accompanying drawings. It will be understood that these terms have relative concepts and are described based on the orientation depicted in the drawings.

[0032] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Furthermore, terms such as those defined in common dictionaries shall be interpreted as having a meaning consistent with their meaning in the context of the relevant art and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0033] It will be understood that the terms “comprising” or “including” as used in this specification specify the presence of a described feature, integer, step, operation, element, component, or combination thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

[0034] In the following description, embodiments of the inventive concept will be illustrated with reference to the accompanying drawings.

[0035] Figure 1 This is a perspective view of an embodiment of a substrate processing apparatus according to the inventive concept.

[0036] refer to Figure 1 The substrate processing equipment SPA may include a process chamber CH (hereinafter also referred to as a chamber), multiple air supply units AFP and multiple exhaust units EHP.

[0037] The chamber CH may have a parallelepiped shape, such as a cuboid shape, but the shape of the chamber CH is not limited to this. The chamber CH may extend longer in the second direction DR2, which is perpendicular to the first direction DR1, than in the first direction DR1. In addition, the chamber CH may extend longer in the first direction DR1 than in the third direction DR3, which is perpendicular to the plane defined by the first direction DR1 and the second direction DR2.

[0038] In the following text, in this specification, the term "in the plan view" may be defined as the state when viewed from a third-party DR3.

[0039] The air supply unit AFP may extend in the third direction DR3 and be arranged along the second direction DR2. The air supply unit AFP may be connected to one of the opposite sides of the chamber CH in the first direction DR1 (also referred to as the first side).

[0040] The exhaust section EHP may extend on the third direction DR3 and be arranged along the second direction DR2. The exhaust section EHP may be connected to the remaining (other) side (also referred to as the second side) of the chamber CH on the opposite sides of each other on the first direction DR1.

[0041] The substrate processing equipment SPA may include multiple external air supply pipes ASP and multiple external air valves AVV connected to the air supply unit AFP. Additionally, the substrate processing equipment SPA may include a common exhaust pipe CEP connected to the exhaust unit EHP, a smoke trap FTP, a second pressure measurement unit PM2, and a common exhaust valve CVV.

[0042] Each air supply unit (AFP) has a substantially identical configuration; therefore, the configuration of one air supply unit (AFP) will be described below. Similarly, each external air supply pipe (ASP) and external air valve (AVV) may have a substantially identical configuration. Accordingly, the configuration of the external air supply pipe (ASP) and external air valve (AVV) connected to one air supply unit (AFP) will be described.

[0043] The airflow supply unit (AFP) may include a plurality of first external air supply pipes APP1 and second external air supply pipes APP2. The first external air supply pipes APP1 may extend in a first direction DR1 and be arranged in a third direction DR3. In one embodiment, the first external air supply pipes APP1 may have a cylindrical shape extending in the first direction DR1. One side of each first external air supply pipe APP1 on an opposite side in the first direction DR1 may be connected to one side of the chamber CH.

[0044] The second external air supply pipe APP2 may extend in the third direction DR3. In one embodiment, the second external air supply pipe APP2 may have a rectangular column shape, for example, extending in the third direction DR3. The second external air supply pipe APP2 may be connected to the remaining (other) side of each of the first external air supply pipes APP1 on opposite sides of each other in the first direction DR1. The channel defined inside the second external air supply pipe APP2 may be defined as continuous with the channel defined inside the first external air supply pipe APP1.

[0045] An external air supply pipe ASP may extend in a first direction DR1 and connect to a second external air supply pipe APP2. A passage defined inside the external air supply pipe ASP may be defined as continuous with a passage defined inside the second external air supply pipe APP2.

[0046] An external air valve (AVV) can be connected to an external air supply pipe (ASP). The external air valve (AVV) can function as a valve and close or open the external air supply pipe (ASP). In one embodiment, the external air valve (AVV) can close or open a passage defined, for example, within the external air supply pipe (ASP). The valve can be implemented in various forms, therefore a detailed description of the valve's configuration is omitted.

[0047] Each EHP unit has essentially the same configuration, therefore, the configuration of one EHP unit will be described below.

[0048] The emission unit EHP may include multiple first emission pipes EPP1, second emission pipes EPP2, multiple emission valves EVV, and multiple first pressure measurement units PM1.

[0049] The first discharge pipe EPP1 may extend in the first direction DR1 and be arranged in the third direction DR3. In one embodiment, each of the first discharge pipes EPP1 may have a cylindrical shape, for example, extending in the first direction DR1. One side of each of the opposite sides of the first discharge pipe EPP1 in the first direction DR1 may be connected to the remaining (other) side of the chamber CH opposite to one side of the chamber CH.

[0050] The second discharge pipe EPP2 may extend in the third direction DR3. In one embodiment, the second discharge pipe EPP2 may have a rectangular column shape, for example, extending in the third direction DR3. The second discharge pipe EPP2 may be connected to the remaining (other) side of each of the first discharge pipes EPP1 on opposite sides of each other in the first direction DR1. The channel defined inside the second discharge pipe EPP2 may be defined as continuous with the channel defined inside the first discharge pipe EPP1.

[0051] An exhaust valve EVV can be connected to a first exhaust pipe EPP1 outside the chamber CH. The exhaust valve EVV can be located near (or adjacent to) a second exhaust pipe EPP2. The exhaust valve EVV can control the opening rate of the passage within the first exhaust pipe EPP1. In one embodiment, the opening degree of the passage defined within the first exhaust pipe EPP1 can be controlled, for example, by rotating the blocking diaphragm of the exhaust valve EVV. This configuration will be described in detail below.

[0052] The first pressure measuring section PM1 can be connected to the first discharge pipe EPP1 outside the chamber CH. The first pressure measuring section PM1 can be close to (or adjacent to) the chamber CH. The first pressure measuring section PM1 can be located between the chamber CH and the discharge valve EVV.

[0053] The first pressure measuring section PM1 can measure the pressure in the first exhaust pipe EPP1. In one embodiment, the first pressure measuring section PM1 can measure the pressure of the airflow, for example, via a channel defined inside each of the first exhaust pipe EPP1. In one embodiment, each of the first pressure measuring sections PM1 may include, for example, a differential pressure gauge.

[0054] The common discharge pipe CEP can extend in the second direction DR2. The second discharge pipe EPP2 of the discharge section EHP can be connected to the common discharge pipe CEP. The passage defined inside the common discharge pipe CEP can be defined as continuous with the passage defined inside the second discharge pipe EPP2.

[0055] The smoke trap FTP, the second pressure measuring section PM2, and the common exhaust valve CVV can be connected to the common exhaust pipe CEP. The smoke trap FTP and the second pressure measuring section PM2 can be positioned closer to the common exhaust valve CVV than the second exhaust pipe EPP2. Accordingly, the second pressure measuring section PM2 can be positioned between the smoke trap FTP and the common exhaust valve CVV.

[0056] The functions of the external air valve AVV, external air supply pipe ASP, air supply unit AFP, emission unit EHP, smoke trap FTP, second pressure measurement unit PM2, and common emission valve CVV will be described in detail below with reference to the accompanying drawings.

[0057] Figures 2 to 5 For example, including by Figure 1 The diagram illustrates a display device based on a substrate manufactured by a substrate processing equipment.

[0058] refer to Figure 2 and Figure 3 In one embodiment of the inventive concept, the display device DD may have a quadrilateral shape, such as a rectangle, in a plan view, having a long side extending in a first direction DR1 and a short side extending in a second direction DR2 intersecting the first direction DR1. The display device DD may be a flexible display device.

[0059] The display device DD may include a folded portion FA and a plurality of non-folded portions NFA1 and NFA2 adjacent to (or near) the folded portion FA. The non-folded portions NFA1 and NFA2 may include a first non-folded portion NFA1 and a second non-folded portion NFA2. The folded portion FA may be disposed between the first non-folded portion NFA1 and the second non-folded portion NFA2. The first non-folded portion NFA1, the folded portion FA, and the second non-folded portion NFA2 may be arranged along a second direction DR2.

[0060] An example is given of a folded portion FA and two non-folded portions NFA1 and NFA2, but the number of folded portions FA and the number of non-folded portions NFA1 and NFA2 are not limited thereto. In one embodiment, the display device DD may include, for example, more than two non-folded portions and a plurality of folded portions with non-folded portions disposed therebetween.

[0061] The upper surface of the display device DD may be defined as a display surface DS, and the display surface DS may be a flat surface defined by a first direction DR1 and a second direction DR2. The image IM generated by the display device DD can be provided to the user through the display surface DS.

[0062] The display surface DS may include a display area DA and a non-display area NDA surrounding the display area DA. The display area DA may display an image, and the non-display area NDA may not display an image. The non-display area NDA may surround the display area DA and define a border printed in a predetermined color for the display device DD.

[0063] The display device DD can be a foldable (or foldable) display device DD that can be folded or unfolded. In one embodiment, the display device DD is foldable such that the folding portion FA bends, for example, relative to a folding axis FX parallel to the first direction DR1. The folding portion FA can be folded to have a radius of curvature R.

[0064] refer to Figure 4 and Figure 5 The display device DD-1 may have a quadrilateral shape, such as a rectangle, in a plan view, having a long side extending in a first direction DR1 and a short side extending in a second direction DR2. The display surface DS that provides the image IM to the user may include a display area DA and a non-display area NDA surrounding the display area DA, and... Figure 2 The display device DD shown in the example is the same.

[0065] The display device DD-1 can be a flexible display device. The display device DD-1 can be wound like a paper roll. The display device DD-1 can be wound in the first direction DR1. The display device DD-1 can be wound from one side. The display device DD-1 can be wound such that the display surface DS faces inward. However, the display device DD-1 is not limited to this, and can also be wound towards the outside of the display surface DS.

[0066] The aforementioned flexible display devices DD and DD-1 may include a flexible substrate, and the flexible substrate may be made of... Figure 1 The example shown is a substrate processing equipment for SPA manufacturing.

[0067] Figure 6 A diagram illustrating a method for manufacturing flexible substrates.

[0068] refer to Figure 6 The substrate SUB may include a glass substrate G-SUB and a flexible substrate F-SUB. During the substrate processing, the glass substrate G-SUB may be prepared, and a flexible plastic material may be coated onto the glass substrate G-SUB. The flexible plastic material coated onto the glass substrate G-SUB may be defined as the flexible substrate F-SUB.

[0069] To cure the flexible plastic material, a curing process can be performed on the flexible substrate F-SUB. In one embodiment, the flexible substrate F-SUB may include, for example, polyimide.

[0070] A curing process is performed on the flexible substrate F-SUB, after which the glass substrate G-SUB can be removed. Subsequently, the components of the display devices DD and DD-1 can be mounted on the cured flexible substrate F-SUB.

[0071] Figure 7 Example settings Figure 6 The diagram illustrates the arrangement of pixels on a flexible substrate.

[0072] Although not illustrated, the aforementioned display devices DD and DD-1 may include a plurality of pixels PX.

[0073] refer to Figure 7 A pixel (PX) may include a transistor (TR) and a light-emitting element (OLED). The light-emitting element (OLED) may include a first electrode (or anode) (AE), a second electrode (or cathode) (CE), a hole control layer (HCL), an electron control layer (ECL), and a light-emitting layer (EML).

[0074] The transistor TR and the light-emitting element OLED can be disposed on a flexible substrate F-SUB. An example of a transistor TR is given, but essentially, a pixel PX may include multiple transistors for driving the light-emitting element OLED and at least one capacitor.

[0075] The display area DA may include a light-emitting area LA corresponding to each pixel PX and a non-light-emitting area NLA surrounding the light-emitting area LA. The light-emitting element OLED may be disposed in the light-emitting area LA.

[0076] A buffer layer (BFL) can be disposed on a flexible substrate (F-SUB), and the buffer layer (BFL) can be an inorganic layer. A semiconductor pattern can be disposed on the buffer layer (BFL). The semiconductor pattern can include polycrystalline silicon, amorphous silicon, or metal oxide.

[0077] Semiconductor patterns can be doped with N-type or P-type dopants. Semiconductor patterns can include heavily doped and lightly doped regions. Heavily doped regions may have higher conductivity than lightly doped regions and are essentially used as the source and drain electrodes of the transistor TR. Lightly doped regions may essentially correspond to the active portion (or channel portion) of the transistor.

[0078] The source portion S, active portion A, and drain portion D of the transistor TR can be formed from a semiconductor pattern. A first insulating layer INS1 can be disposed on the semiconductor pattern. The gate portion G of the transistor TR can be disposed on the first insulating layer INS1. A second insulating layer INS2 can be disposed on the gate portion G. A third insulating layer INS3 can be disposed on the second insulating layer INS2.

[0079] The connecting electrode CNE may include a first connecting electrode CNE1 and a second connecting electrode CNE2 for connecting the transistor TR and the light-emitting element OLED. The first connecting electrode CNE1 may be disposed on the third insulating layer INS3 and connected to the drain portion D via a first contact hole H1 defined in the first insulating layer INS1 to the third insulating layer INS3.

[0080] A fourth insulating layer INS4 may be disposed on the first connecting electrode CNE1. A fifth insulating layer INS5 may be disposed on the fourth insulating layer INS4. A second connecting electrode CNE2 may be disposed on the fifth insulating layer INS5. The second connecting electrode CNE2 may be connected to the first connecting electrode CNE1 via a second contact hole H2 defined in the fourth insulating layer INS4 and the fifth insulating layer INS5.

[0081] A sixth insulating layer INS6 may be disposed on the second connecting electrode CNE2. The layers from the buffer layer BFL to the sixth insulating layer INS6 may be defined as the circuit element layer DP-CL. Each of the first insulating layers INS1 to the sixth insulating layer INS6 may be an inorganic layer or an organic layer.

[0082] A first electrode AE ​​may be disposed on a sixth insulating layer INS6. The first electrode AE ​​may be connected to a second connecting electrode CNE2 via a third contact hole H3 defined in the sixth insulating layer INS6. A pixel defining film PDL defining an opening PX_OP for exposing a predetermined portion of the first electrode AE ​​may be disposed on the first electrode AE ​​and the sixth insulating layer INS6.

[0083] A hole control layer (HCL) may be disposed on the first electrode (AE) and the pixel defining film (PDL). The hole control layer (HCL) may include a hole transport layer and a hole injection layer.

[0084] The luminescent layer (EML) can be disposed on the hole control layer (HCL). The EML can be disposed in the region corresponding to the opening (PX_OP). The EML can comprise organic and / or inorganic materials. The EML can generate light with one of the colors red, green, and blue.

[0085] An electron control layer (ECL) can be disposed on the light-emitting layer (EML) and the hole control layer (HCL). The ECL may include an electron transport layer and an electron injection layer. The hole control layer (HCL) and the ECL can be disposed together throughout the light-emitting region (LA) and the non-light-emitting region (NLA).

[0086] The second electrode CE can be disposed on the electronic control layer ECL. The second electrode CE can also be disposed in the pixel PX. The layer on which the light-emitting element OLED is disposed can be defined as the display element layer DP-OLED.

[0087] A thin-film encapsulation layer (TFE) may be disposed on the second electrode (CE) to cover the pixel (PX). The thin-film encapsulation layer (TFE) may include a first encapsulation layer (EN1) disposed on the second electrode (CE), a second encapsulation layer (EN2) disposed on the first encapsulation layer (EN1), and a third encapsulation layer (EN3) disposed on the second encapsulation layer (EN2).

[0088] The first encapsulation layer EN1 and the third encapsulation layer EN3 may include inorganic insulating layers and protect the pixel PX from moisture and / or oxygen. The second encapsulation layer EN2 may include an organic insulating layer and protect the pixel PX from foreign substances such as dust particles.

[0089] A first voltage can be applied to the first electrode AE ​​via transistor TR, and a second voltage having a lower level than the first voltage can be applied to the second electrode CE. Holes and electrons injected into the light-emitting layer EML combine to form excitons, and the excitons transition to the ground state, enabling the light-emitting element OLED to emit light.

[0090] Figure 8 and Figure 9 For along Figure 1 The cross-sectional view taken by line I-I' is illustrated in the figure and is used to schematically describe the substrate processing technology.

[0091] refer to Figure 8 The substrate processing equipment SPA may include multiple support rods SB1 and SB2, multiple support pins SPN, and multiple rollers ROL. The support rods SB1 and SB2, support pins SPN, and rollers ROL may be disposed inside the chamber CH.

[0092] Support rods SB1 and SB2 may include a plurality of first support rods SB1 and a plurality of second support rods SB2. The first support rods SB1 may extend in a first direction DR1. The second support rods SB2 may extend in a second direction DR2, and will be referred to below. Figure 20 This configuration is illustrated in detail.

[0093] The second support rods SB2 may be spaced apart from each other in the first direction DR1 and disposed close to (or adjacent to) the inner surfaces of the chamber CH facing each other in the first direction DR1. The first support rod SB1 may be disposed between the second support rods SB2. The support pin SPN may be disposed on the first support rod SB1 and extend in the third direction DR3.

[0094] The first support rod SB1 and the second support rod SB2 can be connected to each other. The support pin SPN can be connected to the first support rod SB1.

[0095] Roller ROL may be disposed close to (or adjacent to) the inner surfaces of chamber CH facing each other in the first direction DR1. Roller ROL may be connected to the inner surface of chamber CH. Second support rod SB2 may be disposed on roller ROL. Second support rod SB2 may move along rotating roller ROL. Reference will be made below. Figure 20 Please describe this configuration in detail.

[0096] Multiple substrates SUB can be disposed inside the chamber CH. The substrates SUB can be disposed on the support pin SPN. The substrates SUB can be supported by the first support rod SB1, the second support rod SB2, and the support pin SPN.

[0097] The first support rod SB1 and the second support rod SB2 may each include a heating wire. Because heat generated from the first support rod SB1 and the second support rod SB2 is applied to the substrate SUB during the processing of the substrate SUB, a curing process can be performed on the flexible substrate F-SUB. In one embodiment, for example, heat of about 400 degrees Celsius to about 500 degrees Celsius can be applied to the substrate SUB.

[0098] Although not illustrated, the heating wire may be disposed at various locations within the chamber CH (e.g., on the inner surface of the chamber CH), and the heat generated from the heating wire may be applied to the substrate SUB disposed within the chamber CH.

[0099] refer to Figure 1 and Figure 8 The first external air supply pipe APP1 can be connected to one side of the chamber CH (also referred to as the first side) and extend into the chamber CH. Accordingly, the end of the first external air supply pipe APP1 can be disposed inside the chamber CH.

[0100] The first discharge pipe EPP1 can be connected to the remaining (other) side of the chamber CH opposite to one side of the chamber CH, and extends into the chamber CH. Accordingly, the end of the first discharge pipe EPP1 can be located inside the chamber CH.

[0101] When heat is applied to the substrate SUB and a curing process is performed on the substrate SUB, fumes may be generated on the flexible substrate F-SUB. The fumes may include contaminant particles.

[0102] To remove smoke, an airflow may be formed inside chamber CH. In one embodiment, for example, gas GS may be injected into chamber CH via a first external air supply pipe APP1. In one embodiment, gas GS may include, for example, nitrogen.

[0103] The gas GS supplied to chamber CH can be discharged through the first discharge pipe EPP1. Due to the airflow generated by the flow of gas GS, smoke can be discharged through the first discharge pipe EPP1.

[0104] Gas GS can be injected into chamber CH essentially via a gas supply pipe separately located inside the first external air supply pipe APP1. This process can be defined as a gas injection process. References will follow. Figures 10 to 12 Provide a detailed description of the gas supply pipe configuration.

[0105] refer to Figure 9 After the curing process, external air (C-AR) can be injected into the chamber CH via the first external air supply pipe APP1 to cool the substrate SUB. This process can be defined as an external air injection process. The external air C-AR supplied to the chamber CH can be discharged via the first exhaust pipe EPP1. The substrate SUB can be cooled to room temperature by the external air C-AR. This process can be defined as a substrate cooling process.

[0106] Figure 10 and Figure 11 For along Figure 1 The cross-sectional view of line Ⅱ-Ⅱ' shown in the example. Figure 12 For separate examples Figure 10 and Figure 11 The diagram illustrates the first and second gas supply pipes.

[0107] Figure 10 Can be with Figure 8 The diagram illustrates the gas injection process, and... Figure 11 Can be with Figure 9 The diagram illustrates an external air injection process. In one embodiment, for example, Figure 10 and Figure 11 Here is an enlarged view of the first external air supply pipe APP1 and the second external air supply pipe APP2, as shown in the example. Because Figure 10 and Figure 11 This is an enlarged view of the first external air supply pipe APP1, so not all of the first external air supply pipes APP1 are shown. For example, the two first external air supply pipes APP1 located at the top are shown. Figure 10 and Figure 11 middle.

[0108] For ease of description, Figure 10 and Figure 11 In this embodiment, the substrate SUB, roller ROL, and first support rod SB1 and second support rod SB2, which are disposed inside the chamber CH, are omitted. Figure 12 Instead of showing the cross-sections of the first gas supply pipe GPP1 and the second gas supply pipe GPP2, examples are shown of the side surfaces of the first gas supply pipe GPP1 and the second gas supply pipe GPP2 when viewed from the second direction DR2.

[0109] refer to Figure 1 , Figure 8 and Figure 10 The substrate processing equipment SPA may include a plurality of first gas supply pipes GPP1 disposed inside a first external air supply pipe APP1 and a second gas supply pipe GPP2 disposed inside a second external air supply pipe APP2.

[0110] A first gas supply pipe GPP1 may extend in a first direction DR1. A second gas supply pipe GPP2 may be connected to the first gas supply pipe GPP1 and extend in a third direction DR3. A passage defined inside the second gas supply pipe GPP2 may be defined as continuous with a passage defined inside the first gas supply pipe GPP1.

[0111] Although not illustrated, the fixing portion connecting the first gas supply pipe GPP1 and the second gas supply pipe GPP2 to the inner surface of the first external air supply pipe APP1 and the second external air supply pipe APP2 may be provided inside the first external air supply pipe APP1 and the second external air supply pipe APP2.

[0112] The substrate processing equipment SPA may include a plurality of mesh filters MSF, each disposed inside a first external air supply pipe APP1. The mesh filters MSF may be disposed near (or adjacent to) a corresponding end of the first external air supply pipe APP1. The mesh filters MSF may be disposed inside the first external air supply pipe APP1, and a cover COP may cover the mesh filters MSF. The mesh filters MSF may be closed from the outside by the cover COP.

[0113] A mesh filter MSF may be disposed between the end of the first gas supply pipe GPP1 and the end of the first external air supply pipe APP1. The end of the first gas supply pipe GPP1 may be close to (or adjacent to) the mesh filter MSF. In one embodiment, for example, the end of the first gas supply pipe GPP1 and the mesh filter MSF may be disposed outside the chamber CH.

[0114] Gas GS can be supplied to the second gas supply pipe GPP2. Gas GS can be supplied to the first gas supply pipe GPP1 via the second gas supply pipe GPP2. Gas GS can be injected into chamber CH via the first gas supply pipe GPP1. Gas GS can pass through the mesh filter MSF and then be injected into chamber CH via the first external air supply pipe APP1.

[0115] When gas GS is injected into chamber CH, the aforementioned external air supply pipe ASP can be closed by the external air valve AVV. In one embodiment, for example, the passage inside the external air supply pipe ASP can be closed by the external air valve AVV. Accordingly, the external air C-AR that can flow in through the external air supply pipe ASP is blocked, and therefore cannot be supplied to the first external air supply pipe APP1 and the second external air supply pipe APP2.

[0116] refer to Figure 10 and Figure 12 The heater HT can be connected to the lower part of the second gas supply pipe GPP2. The heater HT heats gas GS, and the heated gas GS can be supplied to the second gas supply pipe GPP2. The heated gas GS can be supplied to the first gas supply pipe GPP1 via the second gas supply pipe GPP2. The heated gas GS can be supplied to the chamber CH via the first gas supply pipe GPP1.

[0117] When the gas GS is not heated, and a relatively low-temperature gas GS is injected into the chamber CH via the first gas supply pipe GPP1, a larger amount of gas GS can move towards the lower part of the chamber CH. That is, a large amount of gas GS can move towards the lower part of the chamber CH, while a relatively small amount of gas GS can be supplied towards the upper part of the chamber CH. In this case, the airflow in the lower part of the chamber CH can become stronger, and the airflow in the upper part of the chamber CH can become weaker. Due to this difference in airflow, vortices can be formed inside the chamber CH.

[0118] As described above, during the curing process of the substrate SUB, fume may be generated on the flexible substrate F-SUB. Due to eddies, the fume may not be properly discharged through the first exhaust pipe EPP1 and may remain inside the chamber CH. The fume retained inside the chamber CH may adhere to the inner surface of the chamber CH and drip onto the substrate SUB during the substrate cooling process via the external air C-AR, resulting in contamination of the substrate SUB.

[0119] When heated gas GS is supplied to chamber CH by heater HT, the amount of gas GS supplied towards the upper part of chamber CH can be increased, and the amount of gas GS moving towards the lower part of chamber CH can be reduced, compared to when unheated gas GS is supplied to chamber CH. Therefore, when heated gas GS is supplied to chamber CH, a relatively more uniform gas GS can be provided in both the upper and lower parts of chamber CH compared to when unheated gas GS is supplied to chamber CH.

[0120] The smoke (FUM) generated during the curing process may be supplied to the first external air supply duct APP1. In one embodiment of the inventive concept, the smoke (FUM) may be blocked (or filtered) by a mesh filter (MSF) near (or adjacent to) the end of the first external air supply duct APP1. Accordingly, the smoke (FUM) may not be supplied to the portion of the first external air supply duct APP1 that is further inward than the mesh filter (MSF).

[0121] When the mesh filter MSF is not used, smoke (FUM) may be supplied into the first external air supply pipe APP1 and adhere to its inner surface. Therefore, the first external air supply pipe APP1 may become contaminated. Furthermore, when external air C-AR is supplied to the first external air supply pipe APP1, the smoke (FUM) adhering to its inner surface can re-enter the chamber CH through the external air C-AR, potentially contaminating the substrate SUB.

[0122] In one embodiment of the inventive concept, the smoke FUM supplied to the first external air supply pipe APP1 is blocked by the mesh filter MSF, and thus contamination of the first external air supply pipe APP1 and the substrate SUB is prevented.

[0123] refer to Figure 1 , Figure 9 and Figure 11After the curing process, the supply of gas GS is stopped, and external air C-AR can be supplied to the first external air supply pipe APP1 and the second external air supply pipe APP2. As illustrated above, the external air supply pipe ASP can be opened via the external air valve AVV, and external air C-AR can flow in through the external air supply pipe ASP. External air C-AR can be supplied to the first external air supply pipe APP1 via the second external air supply pipe APP2. External air C-AR can be supplied to the chamber CH via the first external air supply pipe APP1.

[0124] Figure 13 for Figure 10 The image shows a perspective view of a grid filter. Figure 14 For use in describing Figure 13 The diagram illustrates the configuration of the mesh filter connected to the corresponding first external air supply pipe.

[0125] refer to Figure 10 , Figure 13 and Figure 14 A mesh filter (MSF) may include a border portion (EGP) in the form of a ring and a mesh (MSM) disposed within the border portion (EGP). The mesh (MSM) may have a mesh shape. In one embodiment, the mesh filter (MSF) may, for example, comprise or be made of stainless steel.

[0126] When smoke particles continue to adhere to the mesh filter MSF that filters the smoke particles, the lifespan of the mesh filter MSF expires, and it may be necessary to replace the mesh filter MSF. The mesh filter MSF can be detachably connected to the first external air supply pipe APP1 through an opening OP defined in the first external air supply pipe APP1.

[0127] A mesh filter MSF can be inserted into the first external air supply pipe APP1 through the opening OP, and a cover COP can cover the mesh filter MSF through the opening OP. When the mesh filter MSF reaches the end of its service life, the cover COP can be removed from the first external air supply pipe APP1, and the mesh filter MSL can be removed through the opening OP. Afterwards, a new mesh filter MSF can be connected to the first external air supply pipe APP1.

[0128] The first external air supply duct APP1 may include a transparent material or a transparent portion. In one embodiment, the first external air supply duct APP1 may, for example, comprise quartz or be made of quartz. Because the first external air supply duct APP1 is transparent, it is easy to inspect whether the mesh filter MSF is contaminated. Therefore, it is easier to determine whether the mesh filter MSF needs to be replaced.

[0129] Figure 15The figure shows an embodiment of the arrangement of the grid filter according to the inventive concept.

[0130] For example, Figure 15 Examples and Figure 10 The cross section corresponding to the cross section, and in the following text, for Figure 15 The description of the components illustrated will focus primarily on their relationship with... Figure 10 The examples shown are on different parts.

[0131] refer to Figure 15 The location of the mesh filter MSF can be set differently. In one embodiment, for example, the end of the first gas supply pipe GPP1 and the mesh filter MSF can be located inside the chamber CH.

[0132] Figure 16 for Figure 1 The example shown is a side view of the emission section. Figure 17 For along Figure 1 The cross-sectional view of line Ⅲ-Ⅲ' shown in the example.

[0133] For ease of description, Figure 17 The example shows the barrier membrane BL of the discharge valve EVV located inside the first discharge pipe EPP1, and other configurations of the discharge valve EVV are omitted.

[0134] refer to Figure 16 The substrate processing equipment SPA may include a controller (or control circuit) CON. The controller CON may be connected to an exhaust valve EVV and a first pressure measuring section PM1. The controller CON may control the exhaust valve EVV based on the pressure in the first exhaust pipe EPP1 measured by the first pressure measuring section PM1. The exhaust valve EVV may be controlled by the controller CON to control the opening rate of a passage defined within the first exhaust pipe EPP1.

[0135] refer to Figure 16 and Figure 17 The discharge valve EVV may include a barrier membrane BL disposed inside the first discharge pipe EPP1. The barrier membrane BL is rotatable relative to a rotation axis RX parallel to the second direction DR2. The operation of the barrier membrane BL can be controlled by a controller CON. The passage defined inside the first discharge pipe EPP1 can be closed or opened by the barrier membrane BL.

[0136] The controller CON receives information about the pressure in the first discharge pipe EPP1, measured by the first pressure measuring section PM1. The controller CON controls the operation of the blocking membrane BL based on the pressure measured by the first pressure measuring section PM1, thereby controlling the opening rate of the passage inside the first discharge pipe EPP1. That is, the discharge valve EVV controls the opening rate of the passage inside the first discharge pipe EPP1 based on the pressure measured by the first pressure measuring section PM1.

[0137] In one embodiment, for example, the barrier membrane BL can help increase the opening rate of the channels inside the first discharge pipe EPP1 towards the upper portion. That is, the barrier membrane BL can allow the channels inside the first discharge pipe EPP1 to open further towards the upper portion.

[0138] Even when heated gas GS is supplied to chamber CH, the density of gas GS in the lower part of chamber CH can be greater than the density of gas GS in the upper part of chamber CH. In one embodiment, for example, the density of gas GS inside chamber CH can gradually increase from the upper part to the lower part.

[0139] When the vent valve EVV is not used, the amount of gas GS discharged through the first vent pipe EPP1 may gradually increase from the upper part to the lower part. Accordingly, the pressure generated by gas GS in the first vent pipe EPP1 may gradually increase from the upper part to the lower part. That is, gas GS may not be discharged uniformly in the first vent pipe EPP1.

[0140] When the initial discharge operation is performed, all barrier membranes BL can be set horizontally in the same direction. That is, the opening rate of the first discharge pipe EPP1 can be set to the maximum.

[0141] The amount of gas GS supplied to the first discharge pipe EPP1 can gradually increase from the upper part to the lower part. Correspondingly, the pressure in the first discharge pipe EPP1, measured by the first pressure measuring section PM1, can gradually increase from the upper part to the lower part. As the pressure in the first discharge pipe EPP1 increases, the controller CON can further reduce the opening rate of the channels inside the first discharge pipe EPP1 by rotating the blocking diaphragm BL by a larger margin.

[0142] Because the amount of gas GS supplied to the first discharge pipe EPP1 gradually increases from the upper part to the lower part, the barrier membrane BL allows the opening rate of the channel inside the first discharge pipe EPP1 to increase from the lower part to the upper part. In one embodiment, for example, the barrier membrane BL can be rotated such that the angle defined by the barrier membrane BL and the first direction DR1 gradually increases from the lower part to the upper part.

[0143] The opening rate of the first discharge pipe EPP1, which supplies a relatively large amount of gas GS, can be reduced, and the opening rate of the first discharge pipe EPP1, which supplies a relatively small amount of gas GS, can be increased. Accordingly, the amount of gas GS discharged through the first discharge pipe EPP1 can be balanced. As a result, the pressure in the first discharge pipe EPP1 is balanced, and the pressure in the first discharge pipe EPP1 measured by the first pressure measuring section PM1 can also be balanced.

[0144] Therefore, the controller CON can control the operation of the barrier membrane BL to equalize the pressure in the first discharge pipe EPP1. In one embodiment, the controller CON can control the operation of the barrier membrane BL to equalize the pressure in the first discharge pipe EPP1 to, for example, a target pressure.

[0145] When the pressure in the first discharge pipe EPP1 is lower than the target pressure, the controller CON can rotate the blocking membrane BL, thereby increasing the opening rate of the channels inside the first discharge pipe EPP1. Conversely, when the pressure in the first discharge pipe EPP1 is higher than the target pressure, the controller CON can rotate the blocking membrane BL, thereby decreasing the opening rate of the channels inside the first discharge pipe EPP1.

[0146] Figure 18 For example Figure 1 The diagram illustrates the common exhaust pipe, smoke trap, second pressure measuring section, and common exhaust valve. Figure 19 Example settings Figure 18 The diagram illustrates the barrier membrane of the common discharge valve inside the common discharge pipe.

[0147] refer to Figure 18 A smoke trap (or smoke collector) FTP can be connected to a common exhaust pipe (CEP) and sucks up, collects, and removes smoke flowing in through the CEP. Although not illustrated, a smoke trap FTP may include filters for filtering smoke, etc.

[0148] When smoke is continuously supplied to the common exhaust valve (CVV), the CVV may become contaminated and malfunction. The smoke trap (FTP) removes smoke flowing in through the common exhaust pipe (CEP), thus preventing contamination of the CVV.

[0149] The second pressure measurement section PM2 can measure the pressure of the airflow via a channel defined inside the common exhaust pipe CEP. In one embodiment, the second pressure measurement section PM2 may include, for example, a differential pressure gauge.

[0150] The common discharge valve (CVV) can close or open a passage defined within the common discharge pipe (CEP). The CVV controls the opening rate of the passage defined within the common discharge pipe (CEP).

[0151] The controller CON can be connected to the second pressure measurement unit PM2 and the common exhaust valve CVV. The controller CON can control the common exhaust valve CVV based on the pressure measured by the second pressure measurement unit PM2.

[0152] The pressure in the common emission pipe (CEP) should be kept constant to ensure consistent emission operation. The common emission valve (CVV) controls the opening rate of the passages inside the common emission pipe CEP based on the pressure in the CEP measured by the PM2 pressure measurement section.

[0153] refer to Figure 18 and Figure 19 The common discharge valve (CVV) may include a barrier diaphragm BL-1 disposed inside the common discharge pipe (CEP). The shape of the barrier diaphragm BL-1 is illustrated, and the barrier diaphragm BL-1 may have various shapes depending on the valve configuration. The barrier diaphragm BL-1 may rotate relative to a rotation axis RX-1 parallel to the third direction DR3.

[0154] When the pressure in the common exhaust pipe CEP, measured by the second pressure measurement section PM2, is lower than the target pressure, the controller CON can rotate the barrier membrane BL-1, increasing the opening rate of the channels inside the common exhaust pipe CEP. In this case, the airflow increases, and therefore the pressure in the common exhaust pipe CEP can increase.

[0155] When the pressure in the common exhaust pipe CEP, measured by the second pressure measurement section PM2, exceeds the target pressure, the controller CON can rotate the blocking membrane BL-1, reducing the opening rate of the channels inside the common exhaust pipe CEP. In this case, the airflow decreases, and therefore the pressure in the common exhaust pipe CEP can decrease. Thus, the pressure in the common exhaust pipe CEP can be kept constant at the target pressure according to the operation of the controller CON and the common exhaust valve CVV.

[0156] Figure 20 To set Figure 8 An exploded perspective view of a first support portion and a second support portion below a substrate, as well as a roller, as illustrated in the figure.

[0157] refer to Figure 20 The first support rod SB1 can extend in the first direction DR1 and can be arranged along the second direction DR2. The support pin SPN can be set on the corresponding first support rod SB1.

[0158] The second support rod SB2 may extend in the second direction DR2 and be spaced apart from each other in the first direction DR1. The first support rod SB1 may be disposed between the second support rods SB2. The first support rod SB1 may be connected to the second support rod SB2.

[0159] Rollers ROL may be spaced apart from each other in the first direction DR1 and may be arranged along the second direction DR2. Rollers ROL may rotate clockwise and counterclockwise relative to a rotation axis RX-2 parallel to the first direction DR1. A second support rod SB2 may be provided on the roller ROL and reciprocate in the second direction DR2 according to the rotation of the roller ROL.

[0160] Figure 21 This diagram illustrates the operation of the first and second support rods entering and exiting the chamber via rollers.

[0161] Figure 21 Examples include the state when viewed from the inside of the chamber CH toward the first direction DR1, and a portion of the inner surface of the chamber CH when viewed from the first direction DR1.

[0162] refer to Figure 21 The second support rod SB2 can enter or leave the chamber CH via the roller ROL. The first support rod SB1 and the support pin SPN can also enter or leave the chamber CH according to the movement of the second support rod SB2.

[0163] The roller ROL allows the first support rod SB1 and the second support rod SB2 to be easily separated from the chamber CH. Although not illustrated, one of the two sidewalls of the chamber CH facing each other in the second direction DR2 can be separated from the chamber CH, allowing the first support rod SB1 and the second support rod SB2 to exit from the chamber CH.

[0164] When performing substrate processing multiple times, it may be necessary to clean the first support rod SB1 and the second support rod SB2. In one embodiment of the inventive concept, the first support rod SB1 and the second support rod SB2 are easily separable from the chamber CH, and a cleaning process for the first support rod SB1 and the second support rod SB2 can be performed.

[0165] In one embodiment of the inventive concept, smoke that may be injected via an external air supply pipe is blocked by a mesh filter and uniformly discharged via an exhaust pipe, thereby making it possible to prevent contamination of the substrate.

[0166] In the foregoing, preferred embodiments of the inventive concept have been described with reference to the present invention. However, it will be understood by those skilled in the art or of ordinary skill in the relevant technical field that various modifications and alterations may be made to the inventive concept without departing from the spirit and scope of the inventive concept as described in the claims. Furthermore, the embodiments disclosed in the inventive concept are not intended to limit the technical spirit of the inventive concept, and all technical ideas within the scope of the appended claims and their equivalents should be interpreted as being included within the scope of the inventive concept.

Claims

1. A substrate processing equipment, characterized in that, The substrate processing equipment includes: A chamber, in which a substrate is disposed; An external air supply pipe is connected to the first side of the chamber and extends into the chamber; A gas supply pipe is installed inside the external air supply pipe; A mesh filter is disposed inside the external air supply pipe and between the end of the gas supply pipe and the end of the external air supply pipe; and Multiple first discharge pipes are connected to a second side of the chamber opposite to the first side and extend into the chamber.

2. The substrate processing equipment according to claim 1, characterized in that, The mesh filter is detachably connected to the external air supply pipe.

3. The substrate processing equipment according to claim 1, characterized in that, The end of the gas supply pipe and the mesh filter are disposed outside the chamber, or the end of the gas supply pipe and the mesh filter are disposed inside the chamber. The external air supply pipe includes a transparent portion. Gas is injected into the chamber via the gas supply pipe. After the gas injection is stopped, external air is supplied to the chamber via the external air supply pipe, and The gas and the outside air are discharged through the plurality of first discharge pipes.

4. The substrate processing equipment according to claim 1, characterized in that, The substrate processing equipment further includes a plurality of discharge valves connected to the plurality of first discharge pipes outside the chamber. The plurality of discharge valves respectively control the opening rate of the channels inside the plurality of first discharge pipes, and the opening rate of the channels inside the plurality of first discharge pipes gradually increases towards the upper part.

5. The substrate processing equipment according to claim 4, characterized in that, The substrate processing equipment further includes a plurality of first pressure measuring sections, which are disposed between the chamber and the plurality of discharge valves, respectively connected to the plurality of first discharge pipes, and used to measure the pressure in the plurality of first discharge pipes. The opening rate of the channels inside the plurality of first discharge pipes is controlled by the plurality of discharge valves based on the pressure measured by the plurality of first pressure measuring sections.

6. The substrate processing equipment according to claim 1, characterized in that, The substrate processing equipment further includes: A second discharge pipe is connected to the plurality of first discharge pipes; A common discharge pipe is connected to the second discharge pipe; A common discharge valve is connected to the common discharge pipe; The second pressure measuring section is connected to the common discharge pipe and is positioned closer to the second discharge pipe than the common discharge valve; and A smoke trap, connected to the common exhaust pipe and positioned closer to the second exhaust pipe than the second pressure measuring section, The opening rate of the passage inside the common discharge pipe is controlled by the common discharge valve based on the pressure in the common discharge pipe measured by the second pressure measuring section.

7. The substrate processing equipment according to claim 1, characterized in that, The substrate processing equipment further includes: Multiple rollers are connected to the inner surface of the chamber; Multiple support rods, interconnected with each other, are disposed on the multiple rollers and include heating wires; and Multiple support pins are provided on the multiple support rods. The substrate is disposed on the plurality of support pins, and The plurality of support rods move along the plurality of rollers and enter and exit the chamber.

8. The substrate processing equipment according to any one of claims 1 to 7, characterized in that, The substrate processing equipment further includes a heater connected to the gas supply pipe.

9. A substrate processing equipment, characterized in that, The substrate processing equipment includes: A chamber, in which a substrate is disposed; An external air supply pipe is connected to the first side of the chamber and extends into the chamber; A gas supply pipe is installed inside the external air supply pipe; A plurality of first discharge pipes are connected to a second side of the chamber opposite to the first side and extend into the chamber; and Multiple discharge valves are located outside the chamber and are respectively connected to the multiple first discharge pipes. The plurality of discharge valves respectively control the opening rate of the channels inside the plurality of first discharge pipes, and the opening rate of the channels inside the plurality of first discharge pipes gradually increases towards the upper part.

10. The substrate processing equipment according to claim 9, characterized in that, The substrate processing equipment further includes: A mesh filter is disposed inside the external air supply pipe and between the ends of the gas supply pipe and the external air supply pipe, wherein the mesh filter is detachably connected to the external air supply pipe; A second discharge pipe is connected to the plurality of first discharge pipes; A common discharge pipe is connected to the second discharge pipe; A common discharge valve, connected to the common discharge pipe; and A smoke trap is connected to the common exhaust pipe and is positioned closer to the second exhaust pipe than the common exhaust valve.

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