Light emitting device

Abstract

A light emitting device includes a substrate, a semiconductor element, at least one light emitting element, a reflective cap, a first barrier, and at least one wire. The substrate has a first surface with a first die bonding area and a second die bonding area. The semiconductor element is disposed on the first die bonding area. The light emitting element is disposed on the second die bonding area. The reflective cap covers the semiconductor element. The first barrier is disposed between the semiconductor element and the light emitting element. The wire electrically connects the semiconductor element and the light emitting element. The height of the reflective cap is greater than the height of the first barrier, and the height of the first barrier is greater than the height of the light emitting element.

Description

Technical Field

[0001] This invention relates to a semiconductor device, and more particularly to a light-emitting device. Background Technology

[0002] With the recent development of LEDs, packages that combine driver ICs with LEDs have emerged. However, the surface of the driver IC has a light-absorbing effect, so existing designs suffer from high light extraction efficiency issues. Therefore, the industry urgently needs a new type of packaging design to improve this problem. Summary of the Invention

[0003] This utility model relates to a light-emitting device for improving light extraction efficiency.

[0004] According to one aspect of the present invention, a light-emitting device is provided, comprising a substrate, a semiconductor element, at least one light-emitting element, a reflective shield, a first barrier, and at least one bonding wire. The substrate has a first surface, the first surface having a first chip bonding region and a second chip bonding region. The semiconductor element is disposed in the first chip bonding region. The light-emitting element is disposed in the second chip bonding region. The reflective shield covers the semiconductor element. The first barrier is disposed between the semiconductor element and the light-emitting element. The bonding wire electrically connects the semiconductor element and the light-emitting element. The height of the reflective shield is greater than the height of the first barrier, and the height of the first barrier is greater than the height of the light-emitting element.

[0005] To provide a better understanding of the above and other aspects of this utility model, specific embodiments are described below in conjunction with the accompanying drawings: Attached Figure Description

[0006] Figure 1 A perspective view of a light-emitting device according to an embodiment of the present invention is shown.

[0007] Figure 2 A cross-sectional schematic diagram of a light-emitting device according to an embodiment of the present invention is shown.

[0008] Figure 3 A perspective view of a light-emitting device according to another embodiment of the present invention is shown.

[0009] Figure 4 A plan view of a light-emitting device according to another embodiment of the present invention is shown.

[0010] Figure 5 A cross-sectional schematic diagram of a light-emitting device according to another embodiment of the present invention is shown.

[0011] Figure 6 A schematic diagram of a light-emitting device according to another embodiment of the present invention is shown.

[0012] Figure 7 A schematic diagram of a light-emitting device according to a comparative example is shown.

[0013] Figures 8A to 8J A cross-sectional schematic diagram illustrating a method for manufacturing a light-emitting device according to an embodiment of the present invention is shown.

[0014] The attached figures are labeled as follows:

[0015] 100, 100', 101, 101': Light-emitting device; 110: Substrate

[0016] 110': Substrate connector 111: First surface

[0017] 112a: First chip bonding area; 112b: Second chip bonding area

[0018] 113: Isolation Zone 114: Receiving Pad

[0019] 115: Cutting track; 120: Semiconductor component

[0020] 122a: Rising segment 122b: Falling segment

[0021] 122c: Horizontal segment; 123: Turning point

[0022] 124: Depletion area of ​​solder pad 125: Solder pad

[0023] 130: Light-emitting element; 140: Reflective cover

[0024] 141: Vertex 150: First retaining wall

[0025] 160: Second retaining wall 170: Third retaining wall

[0026] 171: Top surface 180: Transparent encapsulation

[0027] 181: Upper surface G: Distance

[0028] H1, H2, H3, H3', H4, H5: Height α: Turning angle

[0029] θ1,θ1': included angle; θ2,θ2': included angle Detailed Implementation

[0030] Please refer to Figure 1 and Figure 2 ,in Figure 1 A perspective view of a light-emitting device 100 according to an embodiment of the present invention is shown. Figure 2A cross-sectional schematic diagram of a light-emitting device 100 according to an embodiment of the present invention is shown. The light-emitting device 100 includes a substrate 110, a semiconductor element 120, bonding wires 122, at least one light-emitting element 130, a reflective shield 140, and a first barrier 150. To show the semiconductor element 120 covered by the reflective shield 140, Figure 1 In perspective view, the outline of the reflection occlusion 140 is represented by dashed lines, and Figure 1 It is not shown as Figure 2 The transparent encapsulation 180 is shown. Although Figure 1 Only a single light-emitting device 100 is shown, but it is conceivable that multiple semiconductor elements 120 can be formed on the same substrate and, after packaging, can be cut to form their own independent light-emitting devices 100.

[0031] like Figure 1 As shown, a semiconductor element 120 is disposed in a first chip bonding region 112a on the first surface 111 of the substrate 110, and a light-emitting element 130 is disposed in a second chip bonding region 112b on the first surface 111 of the substrate 110. The first chip bonding region 112a and the second chip bonding region 112b are separated by an isolation region 113. A first barrier 150 is disposed on the isolation region 113.

[0032] Furthermore, the semiconductor element 120 and the light-emitting element 130 can be attached to the first chip bonding region 112a and the second chip bonding region 112b respectively using an adhesive (not shown). The semiconductor element 120 can be a logic control chip, a transistor, or a switching element, and the light-emitting element 130 can be a light-emitting diode (LED), which is an electroluminescent semiconductor light-emitting element 130 in which electrons and holes combine to release energy in the form of photons. The light-emitting element 130 can be disposed on the substrate 110 through a die bonding process, and electrically connected to the semiconductor element 120 through a wire bonding process 122 to provide the required current to the light-emitting element 130. The light-emitting element 130 and the semiconductor element 120 are then encapsulated in a transparent package 180 to protect the light-emitting element 130 and enhance its luminous efficiency and durability. Since the light-emitting element 130 generates heat during operation, a good heat dissipation design can prevent overheating and extend the life of the light-emitting element 130.

[0033] In one embodiment, the light-emitting element 130 may comprise group III-V semiconductor materials of group III and group V elements, and be applied in fields such as lighting, medical, display, communication, sensing, and power systems. When the group III-V semiconductor material comprises AlGaN, it may emit ultraviolet light with a peak wavelength of 250 nm to 400 nm, for example; when the group III-V semiconductor material comprises InGaN, it may emit deep blue or blue light with a peak wavelength of 400 nm to 490 nm, or green or yellow light with a peak wavelength of 490 nm to 550 nm, or red light with a peak wavelength of 560 nm to 650 nm; when the group III-V semiconductor material comprises InGaP or AlGaInP, it may emit yellow, orange, or red light with a peak wavelength of 530 nm to 700 nm, for example; when the group III-V semiconductor material comprises InGaAs, InGaAsP, AlGaAs, or AlGaInAs, it may emit infrared light with a peak wavelength in the range of 700 nm to 1700 nm, for example. The number and wavelength range of the light-emitting elements 130 are unlimited and can be adjusted according to actual needs to generate the corresponding light emission spectrum.

[0034] In one embodiment, the substrate 110 is, for example, a double-sided copper foil substrate, used to support the semiconductor element 120 and the light-emitting element 130. The manufacturing process of the double-sided copper foil substrate involves, for example, laminating copper foil with a prepreg material and pressing them together under high temperature and pressure to form a laminate. The prepreg material is a film formed by impregnating insulating fiberglass cloth or other fibrous materials with resin, followed by pretreatment and drying. Subsequently, the required vias are drilled into the copper foil substrate. According to the circuit design, excess copper foil is etched away to form the circuit. Finally, the copper foil circuit undergoes surface treatment to remove surface oxides and dirt, ensuring a smooth and clean surface.

[0035] In one embodiment, the substrate 110 is provided with a plurality of pads 114 for electrically connecting the semiconductor element 120 and the light-emitting element 130. In addition, the substrate 110 is provided with a plurality of bonding wires 122 for electrically connecting the semiconductor element 120 and the pads 114 of the substrate 110, electrically connecting the light-emitting element 130 and the pads 114 of the substrate 110, and electrically connecting the semiconductor element 120 and the corresponding light-emitting element 130.

[0036] In Figures 1 and 2, after the semiconductor element 120 and the light-emitting element 130 complete the wire bonding packaging process, a reflective cover 140 is then applied to the semiconductor element 120. The reflective cover 140 can be a highly reflective optical element that can effectively guide the light beam in the desired direction while maintaining high luminous flux. The reflective cover 140 can be a polymer material, such as silicone with reflective fillers, typically designed to achieve 90% or higher reflectivity at a specific wavelength, and can be custom-designed to meet the needs of specific applications. The area infused by the reflective cover 140 covers the semiconductor element 120 and its surroundings, but excludes the area where the light-emitting element 130 is located, to avoid affecting the light extraction efficiency of the light-emitting element 130.

[0037] For light-emitting elements 130 used in high-brightness applications, a high-refractive-index transparent encapsulant 180, such as high-refractive-index silicone or epoxy resin, can be used as the encapsulation material to enhance heat dissipation and light extraction efficiency. Furthermore, the high-refractive-index transparent encapsulant 180 can undergo surface modification, for example, by modifying colloidal materials with high refractive properties using ozone-ultraviolet (UV) curing technology to enhance their surface hardness and reduce stickiness.

[0038] In addition, to prevent the reflective mask 140 from overflowing during potting and affecting the light emission of the light-emitting element 130, a first barrier 150 is provided between the semiconductor element 120 and the light-emitting element 130. The first barrier 150 is used to restrict the flow of the reflective mask 140 towards the light-emitting element 130, thereby reducing the probability of overflow. The first barrier 150 may also be a polymer material, such as silicone. In some embodiments, reflective particles may also be included to increase reflectivity and reduce light reflection loss within the encapsulation structure. In one embodiment, the precursor of the reflective mask 140 may be a colloid with a thixotropic coefficient greater than 2. The thixotropic coefficient is also known as the thixotropic index, thixotropic index, etc. The larger the thixotropic coefficient, the better the shape and height of the reflective mask 140 are maintained. The height relationship between the reflective mask 140 and the light-emitting element 130 is described later.

[0039] like Figure 2 As shown, after the reflective shield 140 is completed, a transparent encapsulation 180 is then placed over the substrate 110, semiconductor element 120, light-emitting element 130, bonding wire 122, reflective shield 140, and first barrier 150. The transparent encapsulation 180 is then baked and cured. Figure 2Viewed along the central cross-section of semiconductor element 120, the outer contour of reflective cover 140 is an arc, and the outer contour of first barrier 150 is also an arc. Furthermore, the upper surface 181 of transparent package 180 can be a plane, and the outer contour of reflective cover 140 has a vertex 141, which is separated from the upper surface 181 of transparent package 180 by a distance G. This distance G is greater than the height H1 of light-emitting element 130 or other values. This reserved distance G allows light emitted from light-emitting element 130 to pass through and be reflected or scattered to areas away from light-emitting element 130, thereby increasing the amount of light emitted from areas away from light-emitting element 130.

[0040] In one embodiment, a transparent encapsulant 180 is molded and deposited onto the first surface 111 of the substrate 110. The transparent encapsulant 180 is a highly transparent encapsulation material used to protect electronic components. Common transparent encapsulation materials include epoxy resins, silicone, and certain types of polymers, such as ethylene-vinyl acetate copolymer (EVA). Epoxy resins possess excellent mechanical properties, insulation, corrosion resistance, adhesion, and low shrinkage, while silicone has good optical properties and flowability, and is commonly used for light-emitting diode (LED) encapsulation.

[0041] like Figure 2 As shown, the bonding wire 122 connecting the semiconductor element 120 and the corresponding light-emitting element 130 has a rising section 122a, a horizontal section 122c, and a falling section 122b. At least one turning angle α exists between the horizontal section 122c and the falling section 122b, and the turning angle α is between 110 degrees and 150 degrees. In one embodiment, the position of the rising section 122a is determined by the lifting height of the bonding wire 122, the position of the horizontal section 122c is determined by the position of the turning portion 123 of the bonding wire 122, and the falling section 122b is determined by the extension length of the bonding wire 122 connecting to the pad 114. After the reflective shield 140 covers the semiconductor element 120, a portion of the horizontal segment 122c and the descending segment 122b are exposed outside the reflective shield 140. This increases the resistance to the uncured reflective adhesive, preventing it from flowing along the descending segment 122b of the bonding wire 122 to the light-emitting element 130, thus affecting the light emission effect. Simultaneously, experiments have shown that when the reflective shield 140 covers the rising segment 122a and a portion of the horizontal segment 122c of the bonding wire 122, the breakage of the bonding wire 122 at the bonding point of the semiconductor element 120 is significantly reduced, greatly improving product reliability.

[0042] Please refer to Figures 3 to 5 ,in Figure 3 A perspective view of a light-emitting device 101 according to another embodiment of the present invention is shown. Figure 4 A plan view of a light-emitting device 101 according to another embodiment of the present invention is shown. Figure 5 A cross-sectional schematic diagram of a light-emitting device 101 according to another embodiment of the present invention is shown. The light-emitting device 101 includes a substrate 110, a semiconductor element 120, bonding wires 122, at least one light-emitting element 130, a reflective shield 140, a first barrier 150, a second barrier 160, a third barrier 170, and a light-transmitting encapsulation 180. For descriptions of the substrate 110, semiconductor element 120, light-emitting element 130, reflective shield 140, first barrier 150, and light-transmitting encapsulation 180, please refer to the above embodiment; they will not be repeated here. Identical components are represented by the same component symbols.

[0043] In this embodiment, the second barrier 160 is disposed on the substrate 110. In another embodiment, a third barrier 170 may be included, disposed along the periphery of the substrate 110 to surround the side surface of the light-transmitting package 180. Figure 5 As shown, semiconductor element 120, light-emitting element 130, bonding wire 122, first barrier 150, second barrier 160, and reflective shield 140 are all located in the space surrounded by third barrier 170. Figure 5 As shown, the second barrier 160 is disposed on the substrate 110 and located on the side of the semiconductor element 120 away from the first barrier 150, to block the reflective cover 140 to prevent it from overflowing during potting. The second barrier 160 may be a polymer material, such as silicone. It may also contain reflective particles to increase light reflectivity and reduce light reflection loss within the package structure.

[0044] In one embodiment, the height H2 of the first barrier 150 may be greater than the height H1 of the light-emitting element 130. In another embodiment, the height H4 of the second barrier 160 may be greater than the height H1 of the light-emitting element 130. In some embodiments, the heights H2 and H4 of the first barrier 150 and the second barrier 160 are, for example, between 9 and 12 mils. The height of the first barrier 150 and / or the second barrier 160 being greater than the height of the light-emitting element 130 helps to confine the reflection shield 140 within a desired area, preventing it from covering the light-emitting element 130, while the height of the first barrier 150 also helps to control the light pattern. In one embodiment, the bonding wire 122 connecting the semiconductor element 120 and the light-emitting element 130 passes above the first barrier 150, and the distance between the first barrier 150 and the bonding wire 122 is greater than 1 mil. That is, the height H2 of the first barrier 150 is not greater than the height requirement of the bonding wire 122 in subsequent wire bonding processes.

[0045] Furthermore, the third barrier 170 can be made of silicone or a reflective material, which can effectively reduce light absorption and rotation, thereby reducing light reflection loss within the encapsulation structure. Figure 5In the middle, the height H5 of the third barrier 170 is higher than the height H3 of the top surface of the reflective cover 140, and the reflective cover 140 can be completely contained in the light-transmitting encapsulation 180.

[0046] In one embodiment, the third barrier 170 may be formed on a pre-defined etchable groove 115 surrounding the substrate 110, typically a pre-designed groove, recess, scribe line, or cut line. The etchable groove 115 may be formed by methods such as mechanical cutting, laser cutting, or etching. These etchable grooves 115 ensure that the third barrier 170 can extend into the substrate 110, prevent light leakage at the bottom of the third barrier 170, and improve reliability.

[0047] The reflective particle concentration of the third barrier 170 is the proportion of filler material to the total volume in the encapsulation material, usually expressed as a volume percentage. The reflective particle concentration affects the performance of the encapsulation material, such as mechanical strength, coefficient of thermal expansion, and dielectric properties. Taking epoxy resin or silicone as an example, the reflective particle concentration of the third barrier 170 can be greater than that of the first barrier 150 to increase the mechanical strength and reflectivity of the third barrier 170.

[0048] In one embodiment, the upper surface 181 of the light-transmitting encapsulation 180 is substantially flush with the upper surface 171 of the third barrier 170, or the upper surface 181 of the light-transmitting encapsulation 180 may be higher than the upper surface 171 of the third barrier 170. Please refer to... Figure 5 Viewed along the central cross-section of the semiconductor element 120, when the upper surface 181 of the transparent package 180 is a plane, the outer contour of the reflective cover 140 is slightly lower than the upper surface 181 of the transparent package 180, so that the vertex 141 of the outer contour of the reflective cover 140 is separated from the upper surface 181 of the transparent package 180 by a distance G. This distance G is greater than the height H of the light-emitting element 130 or other values. This reserved distance G allows light emitted by the light-emitting element 130 to pass through and be reflected or scattered to areas away from the light-emitting element 130, thereby increasing the amount of light emitted from areas away from the light-emitting element 130.

[0049] Furthermore, the transparent encapsulation 180 may contain light-diffusing particles or phosphors to achieve different optical effects. Light-diffusing particles can distribute light more evenly, while phosphors can change the color of light and enhance its intensity. In one embodiment, light-diffusing particles, such as silicon dioxide (SiO2) or aluminum oxide (Al2O3), are added to the encapsulation material. These particles soften the light emitted by the light-emitting element 130, providing a more uniform illumination distribution. Additionally, phosphors, such as rare-earth-doped fluorescent materials, can convert light of a specific wavelength into light of different wavelengths. The principle of phosphors is to absorb excitation light (e.g., blue light) and then release it as longer wavelength light (e.g., yellow, green, red light), achieving the purpose of color conversion. For example, a blue light-emitting element can be combined with yellow phosphor to produce white light.

[0050] Please refer to Figure 4 The length of the second barrier 160 can be greater than or equal to the length of the first barrier 150. In one embodiment, the first barrier 150 is located on the side of the semiconductor element 120 adjacent to the light-emitting element 130 and does not contact the light-emitting element 130. The space occupied by the first barrier 150 is relatively narrow, thus it cannot form a long barrier. Conversely, the second barrier 160 is located on the side away from the light-emitting element 130. The space occupied by the second barrier 160 is larger, thus it can form a longer barrier.

[0051] In addition, such as Figure 4 As shown, the upper surface of the semiconductor element 120 has multiple solder pads 125, and soldering technology can be used to fix the bonding wires 122 to the individual solder pads 125 and establish an electrical connection. These solder pads 125 are distributed around the upper surface of the semiconductor element 120. A solder pad depletion region 124 is located in the center of the semiconductor element 120, and the vertex 141 of the outer contour of the reflective mask 140 corresponds to the area above the solder pad depletion region 124. Because the dispensing needle dispenses from above the solder pad depletion region 124 during dispensing, the precursor of the reflective mask 140 can flow uniformly outward from the solder pad depletion region 124, thus the precursor has a high thixotropic coefficient and can maintain a dome shape. Furthermore, the vertex 141 is approximately located at the center of the semiconductor element 120. In other words, if the dispensing needle does not dispense from above the solder pad depletion region 124, the needle may hit the bonding wire 122, causing product failure.

[0052] Please refer to Figure 5 The height H3 of the reflective shield 140 is 1.5 times, 2 times, or 2.5 times the height H1 of the light-emitting element 130. This allows for a more complete reflection of the light emitted by the light-emitting element 130.

[0053] Please refer to Figure 5 and Figure 6 ,in Figure 6A schematic diagram illustrating another embodiment of the light-emitting device 101' is shown. The light-emitting device 101' of this embodiment differs from the light-emitting device 101 of the above embodiment in the following aspects: the height of the reflective shield 140, the angle at the junction of the reflective shield 140 and the first barrier wall 150, and the angle at the junction of the reflective shield 140 and the second barrier wall 160. Figure 5 In the middle, the height H3 of the reflective cover 140 is approximately 1.5 to 2 times the height H1 of the light-emitting element 130. Figure 6 In the middle, the height H3' of the reflection cover 140 is about 1.5 times the height H1 of the light-emitting element 130.

[0054] like Figure 5 As shown, viewed along the central cross-section of the semiconductor element 120, the first barrier 150 contacts the reflective shield 140 and has an included angle θ1 less than or equal to 100 degrees, for example, 60 to 90 degrees. The second barrier 160 contacts the reflective shield 140 and has an included angle θ2 less than or equal to 100 degrees, for example, 60 to 90 degrees.

[0055] like Figure 6 As shown, when the height H3' of the reflective shield 140 decreases, when viewed along the central cross-section of the semiconductor element 120, the first barrier 150 and the reflective shield 140 have an angle θ1' greater than 100 degrees, for example, 110 degrees to 140 degrees. The second barrier 160 and the reflective shield 140 have an angle θ2' greater than 100 degrees, for example, 110 degrees to 140 degrees.

[0056] Please refer to Figures 5 to 7 ,in Figure 7 A schematic diagram of a comparative example light-emitting device 100' is shown. The differences between the comparative example light-emitting device 100' and the light-emitting devices 101 and 101' of the above embodiments are described in Table 1. The comparative example light-emitting device 100' does not have a reflective shield 140, a first barrier 150, and a second barrier 160. Compared with the light-emitting devices 101 and 101' of the above embodiments, it has poorer brightness and poorer light uniformity.

[0057] Comparative example Example Example legend Figure 7 Figure 6 Figure 5 Brightness (percentage) mcd 1600.6(100%) 2014.2 (125.9%) Brightness increased 2200.8 (137.5%) brightness increase Light uniformity Poor good better illustrate Overall brightness increased by 25.9%. Overall brightness increased by 37.5%.

[0058] Table 1

[0059] Please refer to Figures 8A to 8J The diagram illustrates a cross-sectional view of a method for manufacturing a light-emitting device 101 according to an embodiment of the present invention. Firstly, in... Figure 8A In this embodiment, a substrate bonding plate 110' for packaging is provided, such as a double-sided copper foil substrate. A semiconductor element 120 is disposed in the first chip bonding region 112a of the substrate bonding plate 110'. Next, in... Figure 8BIn this configuration, the light-emitting element 130 is disposed in the second chip bonding region 112b of the substrate bonding plate 110'. Figure 8C In this process, a first barrier 150 is set between the semiconductor element 120 and the light-emitting element 130 by dispensing and baking, and a second barrier 160 is set on the side of the semiconductor element 120 away from the light-emitting element 130. The heights H2 and H4 of the first barrier 150 and the second barrier 160 are greater than the height H1 of the light-emitting element 130, but the height H2 of the first barrier 150 is not greater than the height requirement of the bonding wire 122 in the subsequent wire bonding process.

[0060] Next, in Figure 8D In this process, multiple bonding wires 122 are formed on the substrate interconnect 110' using a wire bonding machine. The bonding wires 122 are used to electrically connect the semiconductor element 120 to the pads 114 (not shown) of the substrate 110, to electrically connect the light-emitting element 130 to the pads 114 (not shown) of the substrate 110, and to electrically connect the semiconductor element 120 to the corresponding light-emitting element 130. The bonding wires 122 connecting the semiconductor element 120 to the corresponding light-emitting element 130 can pass above the first barrier 150, and the distance between the first barrier 150 and the bonding wires 122 can be greater than 1 mil.

[0061] exist Figure 8E In this process, the precursor of the reflective cover 140 is injected onto the substrate bonding plate 110' by dispensing, and then the precursor is thermo-cured to form a solid reflective cover 140. The area of ​​the reflective cover 140 being poured covers the semiconductor element 120 and its surroundings, but does not include the area where the light-emitting element 130 is located. To prevent overflow of the reflective cover 140 during pouring, a first barrier 150 is provided between the semiconductor element 120 and the light-emitting element 130. In addition, the turning portion 123 of the bonding wire 122 is located outside the reflective cover 140, that is, the horizontal section 122c of the bonding wire 122 is partially exposed outside the reflective cover 140, increasing the climbing resistance of the uncured reflective adhesive, preventing the uncured reflective adhesive from reaching the descending section 122b of the bonding wire 122, thereby improving the problem that the reflective adhesive may flow along the descending section 122b of the bonding wire 122 to the light-emitting element 130.

[0062] exist Figure 8F In this process, a fluid, light-transmitting encapsulating material is poured through a mold to completely cover the first surface of the substrate connecting plate 110'. Then, the light-transmitting encapsulating material is thermosetting to form a solid light-transmitting encapsulation body 180. When the upper surface 181 of the light-transmitting encapsulation body 180 is a plane, the upper surface 181 of the light-transmitting encapsulation body 180 is higher than the outer contour of the reflective cover 140, so that the vertex of the outer contour of the reflective cover 140 is separated from the upper surface 181 of the light-transmitting encapsulation body 180 by a distance G.

[0063] exist Figure 8G In the process, the transparent encapsulator 180 and the substrate connecting plate 110' are pre-cut to create cut channels 115 surrounding the encapsulation unit. Next, in... Figure 8H In this process, the precursor of the third barrier 170 is injected into the substrate connecting plate 110' by potting to fully cover the light-transmitting package 180, and then thermosetting is performed to form a solid third barrier 170. The third barrier 170 can be formed on a pre-defined slit 115 to surround the side of the light-transmitting package 180. Figure 8I In the process, the excess material of the third barrier 170 covering the light-transmitting package 180 is removed by chemical mechanical polishing process to expose the upper surface 181 of the light-transmitting package 180 and the upper surface 171 of the third barrier 170.

[0064] exist Figure 8J In the process, the substrate connecting plate 110' is separated by a cutting machine along the cutting channel 115 to form independent light-emitting devices 101.

[0065] In summary, although the present invention has been disclosed above with reference to embodiments, it is not intended to limit the present invention. Those skilled in the art to which this invention pertains can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this invention shall be determined by the scope of protection defined in the patent application.

Claims

1. A light-emitting device, characterized in that, include: A substrate has a first surface, the first surface having a first chip bonding region and a second chip bonding region; A semiconductor element is disposed in the first chip bonding region; At least one light-emitting element is disposed in the second chip bonding area; A reflective shield covers and encapsulates the semiconductor device; A first barrier is disposed between the semiconductor element and the light-emitting element; as well as At least one bonding wire electrically connects the semiconductor element and the light-emitting element; The height of the reflective shield is greater than the height of the first barrier wall, and the height of the first barrier wall is greater than the height of the light-emitting element.

2. The light-emitting device as described in claim 1, characterized in that, Viewed along the central cross-section of the semiconductor element, the first barrier is in contact with the reflective shield and has an angle less than or equal to 100 degrees.

3. The light-emitting device as described in claim 1, characterized in that, The height of the reflective shield is 1.5 to 2.5 times the height of the light-emitting element.

4. The light-emitting device as described in claim 1, characterized in that, It also includes a second barrier wall disposed on the substrate and located on the side of the semiconductor element away from the first barrier wall.

5. The light-emitting device as described in claim 4, characterized in that, The height of the reflective shield is greater than the height of the second retaining wall.

6. The light-emitting device as described in claim 4, characterized in that, Viewed along the central cross-section of the semiconductor element, the second barrier is in contact with the reflective shield and has an angle less than or equal to 100 degrees.

7. The light-emitting device as claimed in claim 1, characterized in that, The bonding wire has an ascending section, a horizontal section and a descending section, with portions of the horizontal section and the descending section exposed outside the reflective shield.

8. The light-emitting device as claimed in claim 7, characterized in that, There is at least one turning angle between the horizontal segment and the descending segment, and the turning angle is greater than 110 degrees.

9. The light-emitting device as claimed in claim 1, characterized in that, The first barrier and the reflective cover do not contact the light-emitting element.

10. The light-emitting device as claimed in claim 1, characterized in that, The upper surface of the semiconductor device has a plurality of pads distributed around the upper surface of the semiconductor device, and the middle of the semiconductor device has a pad depletion region, wherein the outer contour of the reflective shield has a vertex corresponding to the pad depletion region.

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