Perovskite cell based on mask technology

Abstract

The utility model discloses a perovskite battery based on mask technology, the utility model discloses an insulation groove is formed by using nanosecond laser to carve on the top of transparent conductive oxide base, divides the base into a plurality of independent unit area, realizes the electrical isolation between the unit in the assembly, fundamentally avoids the occurrence of crosstalk and short circuit phenomenon. This design not only ensures the independence of each battery unit, improves the overall output efficiency of the assembly, but also provides a reliable electrical separation basis for series design. In addition, the functional layers in the assembly structure are arranged in turn, from the transparent conductive oxide base to the back electrode, the layers are in close contact and each has its own function, through the efficient absorption, transmission and collection of photo-generated carriers, the photoelectric conversion efficiency of the battery is maximized.

Description

Technical Field

[0001] This invention belongs to the field of perovskite batteries, specifically, it relates to a perovskite battery based on masking technology. Background Technology

[0002] Perovskite solar cells have become a research hotspot in the photovoltaic field in recent years due to their excellent photoelectric conversion efficiency, low cost, and versatility in fabrication processes. A typical perovskite solar cell comprises a multilayer structure including a transparent conductive oxide substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, a blocking layer, and a back electrode. Each layer plays a crucial role in the photoelectric conversion of the cell, and the rational design of these functional layers and their interconnections is key to improving the performance of perovskite solar cells. However; Improper electrical isolation between functional layers in traditional perovskite solar cells can lead to crosstalk, a phenomenon where photogenerated carriers flow along incorrect paths, causing their electrical characteristics to interfere with each other. This can result in increased carrier load, current loss, and voltage instability. Particularly in series structures, crosstalk can significantly reduce the overall output power of the module, and may even cause short circuits or performance failures in some cells. Furthermore, crosstalk can increase the risk of hot spot effects, further shortening the module's lifespan.

[0003] In view of this, this utility model is hereby proposed. Utility Model Content

[0004] The technical problem to be solved by this invention is to overcome the shortcomings of the prior art and provide a perovskite solar cell based on mask technology, which solves the problems mentioned in the background art.

[0005] To solve the above-mentioned technical problems, the basic concept of the technical solution adopted by this utility model is as follows: A perovskite solar cell based on mask technology includes: a transparent conductive oxide substrate, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, a blocking layer, and a back electrode arranged sequentially from bottom to top; The transparent conductive oxide substrate is the support structure at the bottom of the component and has electrical conductivity. The hole transport layer covers the transparent conductive oxide substrate and is used to transport photogenerated holes. The perovskite light-absorbing layer is located above the hole transport layer and is used to absorb light energy and generate photogenerated electrons and holes. The electron transport layer is disposed above the perovskite light-absorbing layer and is used to transport photogenerated electrons; The barrier layer is located above the electron transport layer and is used to reduce carrier recombination; The back electrode is disposed on the top layer of the component and is in direct contact with the barrier layer. It is used to collect photogenerated carriers and transmit them to the external circuit. Multiple insulating trenches are formed on the transparent conductive oxide substrate by scribing with a nanosecond laser, dividing the transparent conductive oxide substrate into multiple independent unit regions.

[0006] Optionally, an extension for filling insulating trenches is provided below the hole transport layer, and the filling portion and the hole transport layer material are an integral structure.

[0007] Optionally, the layered structure, consisting of a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a blocking layer, is etched from top to bottom with laser grooves by a picosecond laser to achieve electrical isolation between the functional layers.

[0008] Optionally, multiple mask slots are provided above the back electrode, and the mask slots and laser slots are arranged in an alternating pattern.

[0009] Optionally, the width of the insulating trench is 10-50 μm.

[0010] Optionally, the linewidth of the laser groove is 10-50µm.

[0011] By adopting the above technical solution, the present invention has the following beneficial effects compared with the prior art. Of course, any product implementing the present invention does not necessarily need to achieve all of the following advantages at the same time: By using a nanosecond laser to etch insulating trenches on a transparent conductive oxide substrate, the substrate is divided into multiple independent unit regions, achieving electrical isolation between units within the module and fundamentally avoiding crosstalk and short circuits. This design not only ensures the independence of each cell and improves the overall output efficiency of the module, but also provides a reliable electrical separation basis for series designs. Furthermore, the functional layers in the module structure are arranged sequentially, from the transparent conductive oxide substrate to the back electrode. Each layer is in close contact and performs its specific function, maximizing the photoelectric conversion efficiency of the cells through the efficient absorption, transport, and collection of photogenerated carriers.

[0012] The specific embodiments of this utility model will be described in further detail below with reference to the accompanying drawings. Attached Figure Description

[0013] The accompanying drawings described below are merely some embodiments. Those skilled in the art can obtain other drawings based on these drawings without any creative effort. In the drawings: Figure 1 This is a schematic diagram of the cross-sectional structure of a perovskite solar cell.

[0014] The attached diagram lists the components represented by each number as follows: 1. Transparent conductive oxide substrate; 2. Hole transport layer; 3. Perovskite light-absorbing layer; 4. Electron transport layer; 5. Blocking layer; 6. Back electrode; 7. Insulating trench; 8. Laser trench; 9. Mask trench.

[0015] It should be noted that these accompanying drawings and textual descriptions are not intended to limit the scope of the present invention in any way, but rather to illustrate the concept of the present invention to those skilled in the art by referring to specific embodiments. Detailed Implementation

[0016] The present invention will now be described in further detail with reference to the accompanying drawings.

[0017] Please see Figure 1 As shown, this embodiment provides a perovskite solar cell based on mask technology, including a transparent conductive oxide substrate 1, a hole transport layer 2, a perovskite light-absorbing layer 3, an electron transport layer 4, a blocking layer 5, and a back electrode 6 arranged sequentially from bottom to top. The transparent conductive oxide substrate 1 is the bottom support structure of the component and has electrical conductivity. The hole transport layer 2 covers the transparent conductive oxide substrate 1 and is used to transport photogenerated holes. The transparent conductive oxide substrate 1 is made of FTO or ITO glass.

[0018] During preparation, the substrate is ultrasonically cleaned sequentially with deionized water, ethanol, and isopropanol, and then treated with ultraviolet ozone to improve surface cleanliness and uniformity. Nanosecond laser etching is used to segment the conductive layer into independent units, preventing short circuits between units. The etching linewidth is 30–50 µm.

[0019] Hole transport layer 2HTL deposition: NiOx thin films with a thickness of 30~50nm were deposited on FTO glass using magnetron sputtering and annealed at 250℃ for 30 minutes to improve conductivity.

[0020] The perovskite light-absorbing layer 3 is located above the hole transport layer 2 and is used to absorb light energy and generate photogenerated electrons and holes. The perovskite light-absorbing layer 3 is prepared by: preparing an FA-Cs perovskite solution, depositing a thin film using the slit coating method, controlling the thickness to be 500~600nm, annealing at 130℃ for 10 minutes, and thus obtaining the perovskite light-absorbing layer 3.

[0021] The electron transport layer 4 is disposed above the perovskite light-absorbing layer 3 and is used to transport photogenerated electrons; the blocking layer 5 is located above the electron transport layer 4 and is used to reduce carrier recombination; during preparation, 30-50 nm of C60 is deposited on the perovskite layer by vacuum evaporation as the electron transport layer 4 and 8-10 nm of BCP is deposited on the surface of the electron transport layer 4 as the blocking layer 5.

[0022] Below the hole transport layer 2, there is an extension for filling the insulating trench 7, and the filling part and the hole transport layer 2 are made of the same material. Specifically, the filling part and the hole transport layer 2 are prepared by the same method and material, that is, the filling part is prepared during the preparation of the hole transport layer 2.

[0023] The back electrode 6 is disposed on the top layer of the component and is in direct contact with the barrier layer 5. It is used to collect photogenerated carriers and transport them to the external circuit. The back electrode 6 requires protection using a mask template, a technique found in existing technologies. The specific steps are as follows: first, the mask template is fixed to the barrier layer 5 under vacuum. Then, under the protection of the mask, a conductive material is deposited on the barrier layer 5 using sputtering, evaporation, or other thin film deposition techniques. The conductive layer material can be metals such as Au, Ag, Al, and Cu, or transparent conductive oxides such as ITO and AZO, or a composite electrode of metal and transparent conductive oxide, selected according to application requirements.

[0024] By using a nanosecond laser to scribing insulating trenches 7 on a transparent conductive oxide substrate 1, the substrate is divided into multiple independent unit regions, achieving electrical isolation between units within the component, from the root... In this embodiment, a plurality of insulating trenches 7 are formed on the top of the transparent conductive oxide substrate 1 by scribing with a nanosecond laser, dividing the transparent conductive oxide substrate 1 into a plurality of independent unit regions.

[0025] In this embodiment, the layer structure consisting of hole transport layer 2, perovskite light-absorbing layer 3, electron transport layer 4, and blocking layer 5 is etched from top to bottom with laser grooves 8 by a picosecond laser to achieve electrical isolation between functional layers.

[0026] In this embodiment, a plurality of mask grooves 9 are provided above the back electrode 6, and the mask grooves 9 and the laser grooves 8 are arranged alternately.

[0027] In this embodiment, the width of the insulating trench 7 is 10-50 μm.

[0028] In this embodiment, the linewidth of the laser groove 8 is 500µm.

[0029] This utility model is not limited to the above-described embodiments. Anyone should know that structural changes made under the guidance of this utility model, and any technical solutions that are the same as or similar to this utility model, fall within the protection scope of this utility model. Technical aspects, shapes, and structures not described in detail in this utility model are all publicly known technologies.

Claims

1. A perovskite solar cell based on mask technology, characterized in that, include: The following components are arranged from bottom to top: a transparent conductive oxide substrate (1), a hole transport layer (2), a perovskite light-absorbing layer (3), an electron transport layer (4), a blocking layer (5), and a back electrode (6). The transparent conductive oxide substrate (1) is the support structure at the bottom of the component and has electrical conductivity. The hole transport layer (2) covers the transparent conductive oxide substrate (1) and is used to transport photogenerated holes. The perovskite light-absorbing layer (3) is located above the hole transport layer (2) and is used to absorb light energy and generate photogenerated electrons and holes. The electron transport layer (4) is disposed above the perovskite light-absorbing layer (3) and is used to transport photogenerated electrons; The barrier layer (5) is located above the electron transport layer (4) and is used to reduce carrier recombination; The back electrode (6) is disposed on the top layer of the component and is in direct contact with the barrier layer (5) for collecting photogenerated carriers and transmitting them to the external circuit. Multiple insulating trenches (7) are formed on the top of the transparent conductive oxide substrate (1) by scribe with a nanosecond laser, dividing the transparent conductive oxide substrate (1) into multiple independent unit regions.

2. The perovskite solar cell based on mask technology according to claim 1, characterized in that, An extension for filling the insulating trench (7) is provided below the hole transport layer (2), and the filling part and the hole transport layer (2) are integrally formed.

3. A perovskite solar cell based on mask technology according to claim 1, characterized in that, The layered structure, consisting of a hole transport layer (2), a perovskite light-absorbing layer (3), an electron transport layer (4), and a blocking layer (5), is etched from top to bottom with laser grooves (8) by a picosecond laser to achieve electrical isolation between the functional layers.

4. A perovskite solar cell based on mask technology according to claim 1, characterized in that, Multiple mask slots (9) are provided above the back electrode (6), and the mask slots (9) and the laser slots (8) are arranged in an alternating pattern.

5. A perovskite solar cell based on mask technology according to claim 1, characterized in that, The width of the insulating trench (7) is 10-50 μm.

6. A perovskite solar cell based on mask technology according to claim 1, characterized in that, The linewidth of the laser groove (8) is 10-50um.

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