A high performance sic power module

Abstract

A high-performance SIC power module. It relates to the technical field of semiconductor. It includes: a heat dissipation substrate, the top surface of which is provided with a plurality of second substrates connected thereto; a shell, which is fixedly arranged on the heat dissipation substrate and is provided with a longitudinal connector in the middle; a plurality of electrode sheets, the bottom feet of which are respectively electrically connected with corresponding second substrates, and the top parts of which extend upwards and pass through the longitudinal connector; the longitudinal connector is provided with an upwardly extending retaining wall between adjacent electrode sheets; a cover plate is arranged on the shell; a plurality of first insertion holes matched with the electrode sheets and a plurality of second insertion holes matched with the retaining wall are arranged; the retaining wall extends out of the second insertion hole; and the electrode sheet extends out of the first insertion hole. The longitudinal connector serves as an electromagnetic shielding layer, which can inhibit eddy current loss under high-frequency working conditions. The new energy automobile electric drive system meets the demand of switch frequency above 100 kHz.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a high-performance SiC power module. Background Technology

[0002] With the rapid development of power electronics technology, the performance requirements for power modules are increasing. SiC power modules, due to their advantages such as high switching frequency and low conduction loss, have been widely used in new energy vehicles, photovoltaic power generation, and industrial frequency conversion.

[0003] Improving the safety of power modules, especially increasing creepage distance (the insulation distance between conductors to prevent short circuits) within a compact size, is a key challenge in the industry. Existing technologies mainly achieve this through structural optimization or material improvements, but these generally suffer from drawbacks such as increased space occupation or decreased reliability. For example, existing technologies use extended pin designs to increase creepage distance, or use isolation structures to increase the creepage distance between the output terminals and the core. While these solutions partially improve safety, they sacrifice module compactness or reliability. Therefore, how to design a module that enhances insulation performance and interference immunity while maintaining a compact size is a crucial technical problem that needs to be solved in this project. Utility Model Content

[0004] To address the above problems, this utility model provides a high-performance SiC power module that enhances insulation performance and anti-interference capability while maintaining the size specifications.

[0005] The technical solution of this utility model is: A high-performance SiC power module, comprising: A heat dissipation substrate, with multiple second substrates connected thereto on its top surface; The housing is fixedly mounted on the heat dissipation substrate, and a longitudinal connecting body is provided in the middle. Multiple electrode sheets are provided, with their bases electrically connected to the corresponding second substrates, and their tops extending upwards and passing through the longitudinal connecting body; on the longitudinal connecting body, an upwardly extending baffle is provided between adjacent electrode sheets; A cover plate is provided on the housing; it is provided with a plurality of first through holes adapted to the electrode plates and a plurality of second through holes adapted to the retaining wall; The retaining wall extends from the second through hole; the electrode plate extends from the first through hole.

[0006] Specifically, the electrode sheet includes a positive electrode, a negative electrode, and an output electrode arranged at intervals.

[0007] Specifically, the positive electrode includes, from bottom to top, a first pin, a first horizontal portion, a bent portion, and a first protruding portion connected in sequence; The negative electrode includes, from bottom to top, a second pin, a second horizontal portion, and a second protrusion connected in sequence.

[0008] Specifically, the first horizontal portion and the second horizontal portion are parallel, and the first horizontal portion and the second horizontal portion are respectively provided with rectangular notches.

[0009] Specifically, the distance between the first horizontal portion of the positive electrode and the second horizontal portion of the negative electrode is 0.5mm to 0.8mm.

[0010] Specifically, the side of the second substrate is provided with a third substrate that is fixedly connected to the top surface of the heat dissipation substrate; The third substrate is provided with a plurality of drive terminals extending from the housing.

[0011] Specifically, the cover plate is provided with multiple terminal holes that are adapted to the drive terminals.

[0012] Specifically, the third substrate is a copper-clad ceramic substrate, an active metal brazing ceramic substrate, a printed circuit board, or a flexible thin film board.

[0013] Specifically, the second substrate is a copper-clad ceramic substrate, an active metal brazing ceramic substrate, a printed circuit board, or a flexible thin film board.

[0014] Specifically, the heat dissipation substrate is a copper plate or an aluminum alloy plate.

[0015] This invention utilizes an alternating interlocking design of electrode sheets and baffles to construct a reverse magnetic field cancellation mechanism for the current loop, reducing the parasitic inductance of the switching circuit to 40% of that of traditional modules. The longitudinal connector acts as an electromagnetic shielding layer, suppressing eddy current losses under high-frequency operating conditions. The baffles extend from the second interlocking hole to form a three-dimensional insulating barrier, increasing the creepage distance between adjacent electrodes to 2.3 times that of planar structures, meeting the switching frequency requirements of new energy vehicle electric drive systems above 100kHz. Attached Figure Description

[0016] Figure 1 This is a 3D structural diagram of the power module; Figure 2 This is a schematic diagram of the three-dimensional structure behind the hidden cover plate; Figure 3 This is a schematic diagram of the three-dimensional structure after the top of the electrode sheet is straightened; Figure 4 This is a three-dimensional structural diagram showing the electrode plate placement positions; Figure 5 This is a three-dimensional structural diagram of the second substrate connection state; Figure 6 This is a schematic diagram of the three-dimensional structure of the positive electrode; Figure 7 This is a schematic diagram of the three-dimensional structure of the negative electrode; Figure 8 This is a schematic diagram of the three-dimensional structure of the output electrode; Figure 9 This is a three-dimensional structural diagram showing the connection state of the positive and negative electrodes. Figure 10 This is a schematic diagram of the three-dimensional structure of the shell; In the diagram, 100 is the heat dissipation substrate, 200 is the second substrate, 300 is the housing, 310 is the longitudinal connector, 311 is the baffle, and 400 is the electrode sheet. 410 is the positive electrode, 411 is the first pin, 412 is the first horizontal portion, 413 is the bent portion, and 414 is the first protruding portion. 420 is the negative electrode, 421 is the second pin, 422 is the second horizontal part, and 423 is the second protruding part. 430 is the output electrode. 500 is the cover plate, 600 is the power chip, 700 is the bonding wire, 800 is the third substrate, and 810 is the driver terminal. Detailed Implementation

[0017] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0018] In the description of this utility model, it should be understood that the terms "upper," "lower," "left," "right," "vertical," and "horizontal," etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0019] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0020] Assembly of the power module: First, a first substrate 100, four second substrates 200, multiple power chips 600, and a third substrate 800 are provided. The second substrates 200 are connected to the power chips 600 by printing an interconnect layer with solder paste. Then, the second substrates 200 are soldered to the first substrate 100, and the third substrate 600 is soldered. Next, bonding wires 700, drive terminals 610, and power terminals (electrode sheets 400) are provided. The second substrates 200 are electrically connected to the power chips 600 and to the drive terminals 610 via the bonding wires 700. Finally, the power terminals are ultrasonically soldered onto the second substrates 200 for electrical connection of the input and output terminals. During ultrasonic soldering, the parameters of the ultrasonic generator, including frequency, amplitude, and soldering time, are adjusted to ensure soldering quality.

[0021] A high-performance SiC power module, comprising: The heat dissipation substrate 100, also referred to as the first substrate 100, has a plurality of second substrates 200 connected thereto on its top surface; The housing 300 is fixedly disposed on the heat dissipation substrate 100, and a longitudinal connecting body 310 with an H-shaped structure when viewed from above is provided in the middle. Multiple electrode sheets 400 are provided, with their bases electrically connected to the corresponding second substrate 200, and their tops extending upward and passing through the longitudinal connecting body 310. On the longitudinal connecting body 310, an upwardly extending baffle 311 is provided between adjacent electrode sheets 400. In this case, the baffle 311 is integrally formed with the longitudinal connecting body 310 in the housing 300. A cover plate 500 is provided on the housing 300; it is provided with a plurality of first through holes adapted to the electrode plates 400 and a plurality of second through holes adapted to the retaining wall 311; The retaining wall 311 extends from the second through hole; the electrode plate 400 extends from the first through hole and is bent and pressed onto the cover plate 500.

[0022] The housing 300 is made of PPS+30%GF material. The electrode plates 400 extend upwards through the longitudinal connector 310 and then continue upwards, protruding from the cover plate 500 and located at the top of the power module. The retaining wall 311 extends from the longitudinal connector 310 through the cover plate 500, which not only makes the structure compact but also effectively separates adjacent electrode plates 400, increases the creepage distance, and improves the safety of the power module.

[0023] In summary, the creepage barrier design that grows from within the casing optimizes insulation performance, effectively prevents surface discharge of electrical equipment under high-voltage environments, and enhances the safety and reliability of the equipment. This design can be widely used in power electronics, new energy and other fields, and has great market potential and application value.

[0024] like Figure 4 As shown, four second substrates 200 are symmetrically distributed. Several power chips 600 are soldered onto corresponding second substrates 200, and each power chip 600 is electrically connected to an adjacent second substrate 200 via bonding leads 700, forming a power loop between the power chips 600. In this invention, multiple power chips are located on the second substrate 200 within the power loop, increasing the area of ​​the main power loop, enabling control of the span of the signal bonding leads 700, and improving the overcurrent capability of the power module. Simultaneously, it alters the current path, shortens the main power loop, reduces parasitic inductance, lowers voltage spikes, improves the controllability of the SiC power module, and maintains system stability.

[0025] like Figure 5 As shown, a portion of the power chips 600 are mounted on the upper bridge end of the second substrate 200. Figure 5 Two power chips (one on the upper right and one on the lower right) are arranged at intervals along the length of the second substrate 200. Another set of two power chips (600) are mounted on the lower bridge end of the second substrate 200, also arranged at intervals along the length of the second substrate 200. The input terminal of the second substrate 200 for electrically connecting power terminals is located between the two rows of power chips on the upper bridge end, and the output terminal is located between the two rows of power chips on the lower bridge end.

[0026] During the manufacturing process of the power module, power terminals (positive electrode 410, negative electrode 420, and output electrode 430) are ultrasonically welded onto the second substrate 200 for electrical connection between the input and output terminals of the power terminals. Ultrasonic welding utilizes the mechanical vibration energy of ultrasonic frequencies (above 16kHz) to convert the vibration energy of the wire frame into frictional work, deformation energy, and a limited temperature rise between the workpieces under static pressure, achieving solid-state welding between the power terminals and the second substrate. This welding method does not require the supply of current to the workpiece or the application of a high-temperature heat source, effectively overcoming phenomena such as spatter and oxidation that occur during resistance welding. The metallurgical bond between the joints is achieved without melting of the base material, resulting in good conductivity and extremely low or near-zero resistivity after welding. It has low requirements for the surface of the weld metal, allowing welding even with oxidation or electroplating. Furthermore, the welding time is short, requiring no flux, gas, or solder, and the welding is spark-free, making it environmentally friendly and safe. Simultaneously, ultrasonic welding achieves a tighter and more reliable connection, further reducing contact resistance and parasitic inductance, contributing to improved performance and stability of the entire power module.

[0027] The electrode sheet 400 includes a positive electrode 410, a negative electrode 420, and an output electrode 430 arranged at intervals.

[0028] The positive electrode 410 includes, from bottom to top, a first pin 411, a first horizontal portion 412, a bent portion 413 and a first protruding portion 414 connected in sequence; The negative electrode 420 includes, from bottom to top, a second pin 421, a second horizontal portion 422, and a second protrusion 423 connected in sequence.

[0029] The first horizontal portion 412 is parallel to the second horizontal portion 422, and the first horizontal portion 412 and the second horizontal portion 422 are respectively provided with rectangular notches.

[0030] The distance between the first horizontal portion 412 of the positive electrode 410 and the second horizontal portion 422 of the negative electrode 420 is 0.5mm to 0.8mm.

[0031] The side of the second substrate 200 is provided with a third substrate 800 that is fixedly connected to the top surface of the heat dissipation substrate 100. The third substrate 800 is provided with a plurality of drive terminals 810 extending from the housing 300.

[0032] The cover plate 500 is provided with multiple terminal holes that are adapted to the drive terminal 810.

[0033] In this case, there are two retaining wall holes, which are used for the extension of the corresponding retaining wall; there are three electrode holes, which are used for the extension of the corresponding positive electrode 410, negative electrode 420 and output electrode 430; and there are four terminal holes, which are used for the extension of the corresponding drive terminal 810.

[0034] The third substrate 800 is a copper-clad ceramic substrate, an active metal brazed ceramic substrate, a printed circuit board, or a flexible thin film board.

[0035] The second substrate 200 is a copper-clad ceramic substrate, an active metal brazed ceramic substrate, a printed circuit board, or a flexible thin film board.

[0036] The heat dissipation substrate 100 is a copper plate or an aluminum alloy plate.

[0037] Regarding the information disclosed in this case, the following points need to be clarified: (1) The accompanying drawings of the embodiments disclosed in this case only involve the structures involved in the embodiments disclosed in this case; other structures can refer to the general design. (2) Where there is no conflict, the embodiments and features disclosed in this case can be combined with each other to obtain new embodiments; The above are merely specific embodiments disclosed in this case, but the scope of protection of this disclosure is not limited thereto. The scope of protection disclosed in this case shall be determined by the scope of protection of the claims.

Claims

1. A high-performance SiC power module, characterized in that, include: A heat dissipation substrate (100) has a plurality of second substrates (200) connected thereto on its top surface. The housing (300) is fixedly disposed on the heat dissipation substrate (100), and a longitudinal connecting body (310) is provided in the middle. Multiple electrode sheets (400) are provided, with their bases electrically connected to the corresponding second substrate (200), their tops extending upward and passing through the longitudinal connector (310); on the longitudinal connector (310), there is an upwardly extending baffle (311) between adjacent electrode sheets (400). A cover plate (500) is provided on the housing (300); it is provided with a plurality of first through holes adapted to the electrode plates (400) and a plurality of second through holes adapted to the retaining wall (311); The retaining wall (311) extends from the second through hole; the electrode plate (400) extends from the first through hole.

2. The high-performance SiC power module according to claim 1, characterized in that, The electrode sheet (400) includes a positive electrode (410), a negative electrode (420), and an output electrode (430) arranged at intervals.

3. A high-performance SiC power module according to claim 2, characterized in that, The positive electrode (410) includes, from bottom to top, a first pin (411), a first horizontal portion (412), a bent portion (413), and a first protruding portion (414) connected in sequence. The negative electrode (420) includes, from bottom to top, a second pin (421), a second horizontal portion (422), and a second protrusion (423) connected in sequence.

4. A high-performance SiC power module according to claim 3, characterized in that, The first horizontal portion (412) is parallel to the second horizontal portion (422), and the first horizontal portion (412) and the second horizontal portion (422) are respectively provided with rectangular notches.

5. A high-performance SiC power module according to claim 3, characterized in that, The distance between the first horizontal portion (412) of the positive electrode (410) and the second horizontal portion (422) of the negative electrode (420) is 0.5 mm to 0.8 mm.

6. A high-performance SiC power module according to claim 1, characterized in that, The second substrate (200) has a third substrate (800) fixedly connected to the top surface of the heat dissipation substrate (100) on its side. The third substrate (800) is provided with a plurality of drive terminals (810) extending from the housing (300).

7. A high-performance SiC power module according to claim 6, characterized in that, The cover plate (500) is provided with a plurality of terminal holes adapted to the drive terminals (810).

8. A high-performance SiC power module according to claim 6, characterized in that, The third substrate (800) is a copper-clad ceramic substrate, an active metal brazing ceramic substrate, a printed circuit board, or a flexible thin film board.

9. A high-performance SiC power module according to claim 1, characterized in that, The second substrate (200) is a copper-clad ceramic substrate, an active metal brazing ceramic substrate, a printed circuit board, or a flexible thin film board.

10. A high-performance SiC power module according to claim 1, characterized in that, The heat dissipation substrate (100) is a copper plate or an aluminum alloy plate.

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