A thin film deposition apparatus

Abstract

This utility model discloses a thin film deposition apparatus, which includes: a vacuum reaction chamber comprising a reaction chamber body and a chamber top cover connected to the reaction chamber body; an upper electrode assembly disposed on top of the vacuum reaction chamber; a lower electrode assembly for supporting a wafer, disposed opposite to the upper electrode assembly; an radio frequency power supply for providing radio frequency energy, connected to the upper electrode assembly and / or the lower electrode assembly; a radio frequency isolation ring disposed between the upper electrode assembly and the chamber top cover and extending below the chamber top cover, the radio frequency isolation ring having a first heater; and a cooling device connected to the chamber top cover. Its advantage is that this apparatus combines the first heater and cooling device, etc., to meet the different temperature requirements of adjacent radio frequency isolation rings and chamber top covers.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment, and in particular to a thin film deposition apparatus. Background Technology

[0002] In modern semiconductor manufacturing, numerous micro-processing steps are required. Common methods include vapor phase deposition (PVD) or plasma processing using vacuum chambers to process semiconductor substrates. Depending on whether the deposition process involves a chemical reaction, PVD can be divided into physical vapor phase deposition (PVD) and chemical vapor phase deposition (CVD). PECVD (Plasma Enhanced Chemical Vapor Deposition) is a typical semiconductor thin film deposition method widely used to deposit high-quality thin films of desired materials (such as titanium, silicon nitride, and silicon dioxide) on various wafers / substrates (e.g., solar panels, display panels, optical glass).

[0003] With the rapid development of semiconductor technology and the increasing integration of devices, higher and higher requirements are being placed on the quality of wafer surface treatment. During wafer processing, various process conditions affect the quality of the wafer surface treatment. For example, during the deposition of semiconductor materials, the cleanliness of the cavity environment, the stability of components, and the sealing performance of the vacuum reaction chamber directly determine the quality of thin film growth. In practical applications, the conditions within the vacuum processing chamber are often complex, making it difficult to achieve optimal coordination of various factors. For instance, the industry typically uses an insulating structure between the upper electrode assembly and the cavity top cover to electrically isolate them. However, because the insulating structure is adjacent to the cavity top cover, its condition can easily affect the condition of the cavity top cover. For example, a high-temperature insulating structure can easily cause the temperature of the cavity top cover to rise, which is detrimental to the actual process. A high-temperature cavity top cover can worsen the sealing performance of the vacuum reaction chamber, affecting the vacuum environment within the chamber.

[0004] As can be seen from the above, although the thin film processing equipment has undergone several upgrades and its performance has been greatly improved, there are still many shortcomings in terms of equipment stability and the yield rate of processed parts. The existing equipment can no longer meet the requirements for thin film processing quality. Therefore, it is necessary to improve the existing thin film processing equipment to meet the corresponding production needs.

[0005] The statements herein provide only background information relating to this invention and do not necessarily constitute prior art. Utility Model Content

[0006] Based on the aforementioned technical problems, the purpose of this utility model is to provide a thin film deposition apparatus that combines a first heater and a cooling device, etc. The first heater precisely controls the temperature of the radio frequency isolation ring, and the cooling device precisely controls the temperature of the cavity top cover, so as to meet the different temperature requirements of adjacent radio frequency isolation rings and cavity top covers, and to achieve a balance between the temperature control of the radio frequency isolation ring and the temperature control of the cavity top cover.

[0007] To achieve the above objectives, this utility model is implemented through the following technical solution:

[0008] A thin film deposition apparatus, comprising:

[0009] A vacuum reaction chamber, comprising a reaction chamber body and a chamber top cover connected to the reaction chamber body;

[0010] The upper electrode assembly is disposed at the top of the vacuum reaction chamber;

[0011] The lower electrode assembly for carrying the wafer is disposed opposite to the upper electrode assembly;

[0012] A radio frequency power supply for providing radio frequency energy is connected to the upper electrode assembly and / or the lower electrode assembly;

[0013] A radio frequency isolation ring is disposed between the upper electrode assembly and the cavity top cover and extends below the cavity top cover, and the radio frequency isolation ring has a first heater inside;

[0014] A cooling device is connected to the top cover of the cavity.

[0015] Optionally, the cooling device includes a coolant inlet and a coolant outlet, as well as a cooling passage connecting the two.

[0016] Optionally, the cooling channel has a square or circular cross-section.

[0017] Optionally, the cooling device is located inside, above, or on the side of the cavity top cover.

[0018] Optional, also includes:

[0019] A temperature sensor used to monitor the temperature of the cavity top cover is in contact with the cavity top cover.

[0020] Optionally, the cooling device is in contact with the cavity top cover via a heat conduction structure.

[0021] Optionally, the projected area of ​​the heat conduction structure on the top cover of the cavity is 1% to 50% of the projected area of ​​the cooling device on the top cover of the cavity.

[0022] Optionally, the cooling device is integrally manufactured with the heat conduction structure.

[0023] Optionally, the cooling device may be made of at least one of copper, aluminum, and stainless steel.

[0024] Optionally, the cooling device has a ring structure;

[0025] Alternatively, the cooling device may comprise a plurality of circumferentially distributed arc-shaped structures.

[0026] Optionally, the cooling device is connected to the cavity top cover by a mechanical fastening device.

[0027] Optionally, the radio frequency isolation ring includes a first isolation ring and a second isolation ring located below the first isolation ring. The second isolation ring forms a groove structure in which the first heater is placed. The first isolation ring is made of ceramic material, and the second isolation ring is made of quartz material.

[0028] Optionally, the first isolation ring is a first planar structure, and the cross-section of the second isolation ring is generally L-shaped, the second isolation ring including a vertical surface and a second planar structure.

[0029] Optionally, the first heater has a heat insulation structure between it and the top cover of the cavity.

[0030] Optionally, the upper electrode assembly includes:

[0031] The mounting base is connected to the top cover of the cavity;

[0032] A gas spray plate, which is connected to the mounting base;

[0033] A second heater for heating the gas spray plate is disposed above the gas spray plate.

[0034] Optionally, the top cover of the cavity has a through hole, the mounting base has a concave structure, the mounting base is disposed through the through hole, the bottom of the mounting base is located inside the vacuum reaction chamber, and its top edge is at least partially located above the top cover of the cavity.

[0035] Optionally, the second heater is located above the mounting base.

[0036] Optionally, the thin film deposition apparatus is a plasma-enhanced chemical vapor deposition apparatus.

[0037] This utility model has the following advantages compared with the prior art:

[0038] In this invention, a thin film deposition apparatus combines a first heater and a cooling device. The first heater precisely controls the temperature of the radio frequency isolation ring, and the cooling device precisely controls the temperature of the cavity top cover to meet the different temperature requirements of adjacent radio frequency isolation rings and the cavity top cover. This method not only reduces particulate contamination within the cavity but also ensures the sealing of the connection between the cavity top cover and its surrounding components, helping to maintain the stability of the vacuum environment within the cavity, thereby ensuring the stability of the process and guaranteeing the quality of wafer processing. Attached Figure Description

[0039] To more clearly illustrate the technical solution of this utility model, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings in the following description are one embodiment of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0040] Figure 1 This is a schematic diagram of a thin film deposition apparatus according to the present invention;

[0041] Figure 2 This is an enlarged schematic diagram of the upper electrode assembly and the cavity top cover of this utility model;

[0042] Figure 3 This is a top view of a cooling device according to the present invention;

[0043] Figure 4 This is a cross-sectional view of a cooling device according to the present invention;

[0044] Figure 5 This is an enlarged schematic diagram of another upper electrode assembly and cavity top cover of this utility model;

[0045] Figure 6 This is an enlarged schematic diagram of another upper electrode assembly and cavity top cover of this utility model. Detailed Implementation

[0046] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed explanation of the thin film deposition apparatus proposed in this utility model. The advantages and features of this utility model will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clearly illustrate the embodiments of this utility model. Please refer to the drawings to make the objectives, features, and advantages of this utility model more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this utility model. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this utility model, should still fall within the scope of the technical content disclosed in this utility model.

[0047] like Figure 1 and Figure 2The diagram shows a schematic of a thin film deposition apparatus (plasma-enhanced chemical vapor deposition apparatus) according to this invention, used for PECVD processes. The apparatus includes a vacuum reaction chamber 100, comprising a reaction chamber body and a chamber top cover 101 connected to the reaction chamber body. The reaction chamber body includes a chamber sidewall 102 and a chamber bottom wall 103. A wafer transfer port 104 is provided on the chamber sidewall 102 for transferring wafers between the inside and outside of the vacuum reaction chamber 100. An exhaust port (not shown) is provided at a suitable location within the vacuum reaction chamber 100. This exhaust port is connected to an external vacuum pumping device to extract used process gases and byproduct gases from the vacuum reaction chamber 100 during the process, and to establish appropriate pressure within the vacuum reaction chamber 100 through gas flow. The vacuum reaction chamber 100 has a lower electrode assembly 110 at its lower part. The lower electrode assembly 110 includes a stage 111, i.e., a base. The stage 111 has a support surface for supporting the wafer. The stage 111 has a third heater for heating the stage 111 and the wafer. The top of the vacuum reaction chamber 100 is provided with an upper electrode assembly 120, which is disposed opposite to the lower electrode assembly 110. The upper electrode assembly 120 includes a gas spray head 121, which is connected to an external gas supply device 130 for injecting precursor gas, i.e., process gas, into the vacuum reaction chamber 100. The precursor gas reacts at a specific temperature and deposits on the wafer surface to form a thin film of the desired material (e.g., a titanium film, a silicon nitride film, or a silicon oxide film). An insulating radio frequency (RF) isolation ring 122 is provided between the gas spray disk 121 and the cavity top cover 101. The RF isolation ring 122 surrounds the gas spray disk 121 and extends below the cavity top cover 101. The RF isolation ring 122 serves to electrically insulate the gas spray disk 121 from the cavity top cover 101, preventing direct electrical conduction and potential current leakage or short circuits, thereby improving energy utilization efficiency and thus enhancing the quality and efficiency of thin film deposition. The thin film deposition apparatus also includes a second heater 123 for heating the gas spray disk 121.

[0048] In practical applications, the stage 111 can serve as the lower electrode assembly 110 of a thin film deposition apparatus, and the gas spray disk 121 can serve as the upper electrode assembly 120 of the thin film deposition apparatus. A processing region is formed between the upper electrode assembly 120 and the lower electrode assembly 110, which generates high-frequency energy to ignite and sustain the plasma. At least one radio frequency (RF) power supply 140 is connected to the upper electrode assembly 120 and / or the lower electrode assembly 110 via a matching network 141. Upper electrode assemblies 120 or lower electrode assemblies 110 not connected to the RF power supply 140 are grounded. The RF power supply 140 provides RF energy to the upper electrode assembly 120 and / or the lower electrode assembly 110 connected to it, thereby generating a large RF electric field within the vacuum reaction chamber 100. Most of this electric field is contained within the processing region. This electric field accelerates electrons inside the vacuum reaction chamber 100, causing them to collide with gas molecules of the input precursor gas, thereby generating plasma within the vacuum reaction chamber 100. For example, as... Figure 1 As shown, in one embodiment, the RF power supply 140 is connected to the upper electrode assembly 120 and grounded through a matching network 141, while the lower electrode assembly 110 is not connected to the RF power supply 140 and is grounded.

[0049] Plasma contains a large number of high-energy electrons, which provide the activation energy required for chemical vapor deposition (CVD). Collisions between these high-energy electrons and gas molecules in the precursor gas promote the decomposition, combination, excitation, and ionization of these molecules, generating highly reactive chemical groups. These chemical groups then react with the wafer to form the desired thin film on its surface.

[0050] Unlike traditional thermal chemical vapor deposition (TCVD), PECVD processes (such as PECVD-Ti) exhibit enhanced reactivity due to the high degree of dissociation of chemical gases. This allows for the deposition of films not only on the wafer surface but also on other structural surfaces, such as the RF isolation ring 122 and the gas spray disk 121. The density of the grown film is typically significantly affected by the deposition temperature; higher temperatures result in denser films, while lower temperatures lead to more porous films. Low temperatures also facilitate the condensation and aggregation of byproducts (such as NH4Cl). As the deposited material accumulates on the wafer, the porous film is more prone to peeling, becoming a major source of particulate contamination. In practical applications, increasing the temperature of certain structures within the vacuum reaction chamber 100 is commonly used to mitigate particulate contamination within the chamber. For example, the gas spray disk 121 and the radio frequency isolation ring 122 are heated to keep their temperature consistent with that of the stage 111 (greater than 400°C), so that the thin film material grown at the gas spray disk 121 and the radio frequency isolation ring 122 is more dense, so as to ensure that the film deposited on its surface is not easy to peel off, thereby reducing the possibility of particulate contamination.

[0051] Because the RF isolation ring 122 is located close to the cavity top cover 101, its high temperature directly affects the effective temperature control of the cavity top cover 101, easily causing its temperature to exceed 200°C. However, in practical applications, the sealing surface between the cavity top cover 101 and its surrounding components often uses a sealing structure (e.g., an O-ring) to ensure a tight seal. Since the applicable temperature of this sealing structure is typically no higher than 180°C, the temperature of the cavity top cover 101 is usually required to be controlled below 180°C. Excessively high temperatures can damage the sealing structure, affecting the seal between the cavity top cover 101 and its surrounding components, such as the vacuum seal between the cavity top cover 101 and the reaction chamber, leading to an unstable vacuum environment within the chamber. Therefore, achieving a balance between controlling the temperature of the RF isolation ring 122 (requiring high temperature) and controlling the temperature of the cavity top cover 101 (requiring low temperature) is difficult. However, the existing research and development work has not recognized the above-mentioned problem, nor has it made any improvements to address it. Instead, it has focused more on how to ensure the temperature consistency between the gas spray plate 121 and the radio frequency isolation ring 122.

[0052] The applicant team is aware of the above issues, and based on these issues, such as Figure 1As shown, this invention includes a first heater 124 within the radio frequency isolation ring 122 and a cooling device 150 connected to the cavity top cover 101. In practical applications, the first heater 124 heats the radio frequency isolation ring 122 to achieve temperature control, while the cooling device 150 cools the cavity top cover 101 to achieve precise temperature control, thereby meeting the different temperature requirements of adjacent radio frequency isolation rings 122 and cavity top covers 101.

[0053] Based on the above, the temperature of the RF isolation ring 122 can be kept consistent with that of the gas spray plate 121 by the first heater 124. This not only reduces particulate contamination in the cavity but also helps ensure the uniformity of the temperature field distribution in the cavity, thereby reducing uneven film deposition caused by temperature inhomogeneity. At the same time, the cooling device 150 can achieve accurate and effective temperature control of the cavity top cover 101, avoiding excessive temperature of the cavity top cover 101 caused by the high temperature conduction of the RF isolation ring 122. In other words, it avoids the cavity top cover 101 being too hot due to the first heater 124 and the RF isolation ring 122 being too close to the cavity top cover 101, which could damage the sealing structure around the cavity top cover 101 and affect the connection and sealing between the cavity top cover 101 and the surrounding components. This method can effectively ensure that the temperature control effect of the cavity top cover 101 is not affected by the high temperature of the RF isolation ring 122, which helps to ensure the vacuum environment of the vacuum reaction chamber 100, improve the stability and reliability of the thin film deposition device, and extend the service life of the equipment. In practical applications, this thin film deposition apparatus can flexibly adjust the temperature of the RF isolation ring 122 and the cavity top cover 101 by adjusting the working state of the first heater 124 and the cooling device 150 according to different process requirements, so as to adapt to different thin film deposition processes.

[0054] Taking the PECVD-Ti process as an example, the thin film deposition device of the present utility model will be described. In this process, the precursor gas contains TiCl4, and the reducing gas contains H2. During the process, the stage 111 and the wafer are heated by the third heater to a temperature above 400 °C. The gas spraying disk 121 and the radio frequency isolation ring 122 are heated by the second heater 123 and the first heater 124 respectively to a temperature higher than 400 °C. At the same time, the cavity top cover 101 is cooled by the cooling device 150 so that the temperature of the cavity top cover 101 is below 180 °C. Based on the above method, the gas spraying disk 121 and the radio frequency isolation ring 122 have the same or similar temperature distribution as the stage 111, so as to improve the density of the thin film deposited at the gas spraying disk 121 and the radio frequency isolation ring 122 and avoid particle shedding. At the same time, because the temperature at the gas spraying disk 121 and the radio frequency isolation ring 122 is relatively high, Cl as a thin film impurity is more likely to be discharged as HCl. At the same time, TiClx (0 < x < 4) hardly condenses or adheres to the high-temperature thin film surface and is more likely to volatilize from the surface. Based on the above method, the film formation quality can be effectively improved, thereby reducing particle shedding. Therefore, the thin film deposition device of the present utility model can control the temperature of the upper electrode assembly 120 and the cavity top cover 101 to improve the quality and purity of the thin film, thereby reducing particle contamination in the cavity.

[0055] In the present application, the cooling device 150 is a liquid cooling device (the cooling medium is liquid). Specifically, as Figure 3 and Figure 4 shown, the cooling device 150 includes a coolant inlet 151, a coolant outlet 152, and a cooling channel 153 connecting the two. In practical applications, the coolant enters the cooling channel 153 from the coolant inlet 151, flows in the cooling channel 153 to achieve heat exchange between the cooling device 150 and the cavity top cover 101, and then discharges from the coolant outlet 152. In a gaseous cooling device (the cooling medium is gas), the specific heat capacity of the cooling gas is relatively low, and the cooling effect is limited. In practical applications, although the cooling capacity of the gaseous cooling device can be improved to a certain extent by increasing the flow rate of the cooling gas, in actual use, the cooling effect cannot be improved by infinitely increasing the gas flow rate. Therefore, its temperature regulation ability has a fundamental limitation and cannot meet the needs of higher temperature regulation. In the liquid cooling device of the present application, the specific heat capacity is higher, and with more easily controllable flow rate regulation and coolant temperature regulation, it has more advantages in terms of cooling effect. Therefore, compared with the gaseous cooling device, the liquid cooling device of the present utility model has stronger cooling ability and a larger temperature regulation range, and can enable the cavity top cover 101 and its peripheral components (such as the sealing structure) to work normally within an appropriate temperature range.

[0056] As Figure 4As shown, the cooling channel 153 has a square cross-section. A square cross-section cooling channel 153 is easy to manufacture, facilitating the use of standard machining tools and techniques, thus reducing manufacturing costs. Simultaneously, the square cross-section cooling channel 153 has high space utilization, providing a larger flow area and thereby improving cooling efficiency / capacity. On the other hand, in practical applications, the cooling device 150 with a square cross-section cooling channel 153 typically also has a square cross-section on its outer contour. This structure has good structural stability (especially under machine vibration) and is easy to fix. Of course, the cross-sectional shape of the cooling channel 153 is not limited to the above; in practical applications, it can also be other shapes. For example, in some embodiments, the cooling channel 153 has a circular cross-section. A circular cross-section cooling channel 153, when subjected to the pressure from coolant flow, has a more uniform stress distribution, reducing the possibility of localized stress concentration and contributing to improved durability of the cooling device 150.

[0057] like Figure 3 As shown, the cooling device 150 has an overall annular structure. The annular cooling device 150 is distributed circumferentially, enabling omnidirectional cooling of the cavity top cover 101. This ensures uniform cooling in all directions, helps improve the temperature control accuracy and cooling efficiency of the cooling device 150, and guarantees the stability of the cooling effect. It is understood that the cooling device 150 is not limited to the aforementioned annular structure. In other embodiments, it may be presented in other ways, and this application does not impose any limitations on this. For example, in some embodiments, the cooling device 150 includes multiple circumferentially distributed arc-shaped structures.

[0058] Optionally, the cooling device 150 may be made of at least one of copper, aluminum, and stainless steel. Of course, the cooling device 150 may also be made of other materials; this invention does not limit this, and the appropriate material can be selected based on specific needs in practical applications. Optionally, the coolant in the cooling device 150 may be water, ethylene glycol, etc., and the appropriate material can be selected based on actual conditions in practical applications.

[0059] like Figure 1 and Figure 2 As shown, the upper electrode assembly 120 also includes a mounting base 125, which is connected to the cavity top cover 101. The gas spray disk 121 is connected to the mounting base 125. The second heater 123 is disposed above the gas spray disk 121 to heat the gas spray disk 121.

[0060] Furthermore, the cavity top cover 101 has a through hole, through which the mounting base 125 is disposed. The mounting base 125 has a concave structure and includes a bottom, an annular sidewall, and an outwardly extending top edge (ear-shaped part) connected in sequence. The bottom of the mounting base 125 is located inside the vacuum reaction chamber 100, that is, its lower surface is lower than the lower surface of the cavity top cover 101. The gas spray disk 121 is connected to the bottom of the mounting base 125. The outwardly extending top edge of the mounting base 125 is at least partially located above the cavity top cover 101. This top edge is fixed above the cavity top cover 101 by means of a mechanical connection assembly, so as to position the mounting base 125 and the gas spray disk 121 at the top of the vacuum reaction chamber 100. In practical applications, the gas spray plate 121 requires frequent maintenance. Based on the upper electrode assembly 120 of this application, if maintenance or replacement of the gas spray plate 121 is required, only the gas spray plate 121 needs to be removed without modifying other components. Compared to directly fixing the gas spray plate 121 to the top cover 101 of the cavity, the method of fixing the gas spray plate 121 by the mounting base 125 in this application makes the maintenance and replacement of the gas spray plate 121 more convenient and helps to reduce maintenance costs. At the same time, the gas spray plate 121 fixed by the mounting base 125 is usually a flat plate structure, which is easier to manufacture and has lower processing costs.

[0061] Furthermore, the second heater 123 is located above the mounting base 125, specifically within the recessed portion of the concave structure (outside the vacuum reaction chamber 100). In practical applications, the heat from the second heater 123 is transferred to the gas spray plate 121 via the bottom of the mounting base 125, thereby heating the gas spray plate 121. Based on this method, a shorter heat transfer path is achieved between the second heater 123 and the gas spray plate 121, which helps to achieve precise temperature control of the gas spray plate 121 and improves heating efficiency. Simultaneously, since the second heater 123 is located outside the vacuum reaction chamber 100, while ensuring precise temperature control of the gas spray plate 121, it also offers the advantage of easy maintenance and replacement of the second heater 123, eliminating the need for opening the chamber for maintenance.

[0062] like Figure 2As shown, the radio frequency isolation ring 122 includes a first isolation ring 1221 and a second isolation ring 1222 located below the first isolation ring 1221. The first isolation ring 1221 is a first planar structure, i.e., a flat plate structure, located between the top edge of the mounting base 125 and the upper surface of the cavity top cover 101, to electrically insulate the top edge of the mounting base 125 from the cavity top cover 101, preventing direct conductivity between the mounting base 125 and the cavity top cover 101, which could lead to current leakage or short circuit and affect the normal operation of the device. Since the first isolation ring 1221 needs to support the mounting base 125, the first isolation ring 1221 can be made of ceramic material to ensure sufficient support strength for the mounting base 125 while providing electrical isolation.

[0063] The second isolation ring 1222 has an overall L-shaped cross-section, comprising a vertical surface and a second planar structure. The vertical surface is located between the side wall of the mounting base 125 and the inner surface of the cavity top cover 101, providing electrical insulation between the mounting base 125 and the cavity top cover 101. The second planar structure is located inside the vacuum reaction chamber 100 (below the cavity top cover 101), specifically between the bottom of the mounting base 125 and the gas spray disk 121 and the cavity side wall 102, providing electrical insulation between the mounting base 125, the gas spray disk 121, and the cavity top cover 101. Therefore, based on the second isolation ring 1222, the upper electrode assembly 120 can be electrically insulated from the cavity top cover 101 and the cavity side wall 102, ensuring that the current can flow along the designed path, enabling the gas spray disk 121 to stably generate plasma when high-frequency power is applied.

[0064] In some embodiments, the bottom surface of the second planar structure of the second isolation ring 1222 is flush with the bottom surface of the gas spray disk 121 (see [link]). Figure 2 This method helps to ensure a uniform distribution of the electric field within the vacuum reaction chamber 100, thereby ensuring the uniformity of the plasma distribution.

[0065] like Figure 2 As shown, a groove structure is formed within the second planar structure of the second isolation ring 1222. An extension 1223 is located on the side of the groove structure away from the vertical surface. This extension 1223 is connected to the bottom wall of the cavity top cover 101 via a connecting assembly. Optionally, the extension 1223 is integrally formed with the second isolation ring 1222, and the connecting assembly is a bolt assembly. The first heater 124 is located within the groove structure to more effectively heat the radio frequency isolation ring 122, improving heating efficiency. Since the second isolation ring 1222 is used for electrical isolation and to house the first heater 124, in some embodiments, the second isolation ring 1222 is made of quartz material to ensure the heating effect of the first heater 124 on the second isolation ring 1222 while providing electrical isolation.

[0066] In practical applications, the vertical surface of the second isolation ring 1222 can be integrally fabricated with the second planar structure to reduce the connection gaps in this area (the only connection gap inside the cavity is between the extension 1223 and the cavity top cover 101). Based on the flat first isolation ring 1221 and the L-shaped second isolation ring 1222, the connection gaps of the RF isolation ring 122 inside the cavity can be reduced, thereby blocking the process gas inside the vacuum reaction chamber 100 and reducing the gas replacement efficiency between the inside of the vacuum reaction chamber 100 and the inside of the groove structure. At the same time, this method places the connection gap of the second isolation ring 1222 as far away from the gas spray disk 121 as possible, increasing the path and complexity / difficulty of the process gas entering the groove structure from the vacuum reaction chamber 100, which helps to reduce particulate contamination inside the groove structure.

[0067] It is understood that the structure of the radio frequency isolation ring 122 is not limited to the above description, and in other embodiments, it may have other structural components. For example, in another embodiment, the radio frequency isolation ring 122 includes a third isolation ring with an inverted L-shaped cross-section and a flat fourth isolation ring. The third isolation ring includes a planar structure and a vertical surface extending downward from the planar structure to electrically isolate the mounting base 125 from the cavity top cover 101. The fourth isolation ring is located below the cavity top cover 101 and is connected to the bottom of the vertical surface of the third isolation ring. The fourth isolation ring is generally planar and has a groove structure for placing the first heater 124.

[0068] like Figure 2 As shown, the cooling device 150 is located above the cavity top cover 101, and the cooling device 150 is connected to the cavity top cover 101 by a mechanical fastening device (e.g., a bolt assembly). In this embodiment, the cooling device 150 is close to the RF isolation ring 122 and the first heater 124, which allows for timely adjustment of the temperature of the cavity top cover 101. This quickly and effectively eliminates the impact of the high-temperature RF isolation ring 122 and the first heater 124 on the cavity top cover 101, ensuring that the RF isolation ring 122 has a sufficiently high temperature to improve film formation quality and avoid particulate contamination, while minimizing the impact on the temperature of the cavity top cover 101. This achieves protection of the cavity top cover 101 and its surrounding components' sealing performance. On the other hand, since the cooling device 150 is located outside the vacuum reaction chamber 100, installation and maintenance are convenient, and it does not affect the layout of components inside the chamber or the sealing effect of the chamber, helping to save internal space and improve the utilization rate of internal space.

[0069] In this application, the relative positional relationship between the cooling device 150 and the cavity top cover 101 is not limited, as long as effective cooling of the cavity top cover 101 by the cooling device 150 can be achieved. For example, such as Figure 5As shown, in some embodiments, the cooling device 150 is connected to the outer side of the cavity top cover 101. In this embodiment, the cooling device 150 is still located outside the vacuum reaction chamber 100, which helps to reduce the occupation of the cavity space and improve the utilization rate of the cavity space. In other embodiments, the cooling device 150 is located inside the cavity top cover 101 (a separate cooling device 150 is embedded in the cavity top cover 101, or a cooling channel 153 is formed by slotting inside the cavity top cover 101). This method can effectively ensure sufficient contact between the cooling device 150 and the cavity top cover 101, improve cooling efficiency, and at the same time, in this method, the cooling device 150 is closer to the radio frequency isolation ring 122 and the first heater 124, which can eliminate the influence of the high temperature radio frequency isolation ring 122 and the first heater 124 on the cavity top cover 101 as early as possible.

[0070] In practical applications, to further reduce the influence of the first heater 124 on the temperature of the cavity top cover 101, a heat insulation structure 126 can be provided between the first heater 124 and the cavity top cover 101. For example, such as... Figure 6 As shown, in one embodiment, the heat insulation structure 126 is a heat insulation sheet, which is connected and fixed to the bottom wall of the cavity top cover 101. The extension 1223 of the groove structure of the second isolation ring 1222 is connected to the bottom of the heat insulation sheet through a connecting assembly. Since the heat insulation sheet is located between the groove structure of the second isolation ring 1222 and the bottom wall of the cavity top cover 101, and the first heater 124 is located below the heat insulation sheet, the heat insulation sheet can block the direct heat radiation of the first heater 124 to the cavity top cover 101, reduce the heat transfer between the second isolation ring 1222 and the cavity top cover 101, and thus accurately and effectively control the temperature of the cavity top cover 101.

[0071] like Figure 4 As shown, in some embodiments, the cooling device 150 and the cavity top cover 101 are in contact via a heat conduction structure 154. In practical applications, the heat conduction structure 154 can effectively transfer heat from the cavity top cover 101 to the cooling device 150, thereby carrying away the heat through the coolant. Based on this method, the heat conduction efficiency between the cooling device 150 and the cavity top cover 101 can be effectively improved. On the other hand, through the arrangement of the heat conduction structure 154, the temperature distribution of the cavity top cover 101 can be better controlled and optimized, avoiding local overheating or overcooling, thereby improving the stability of the device.

[0072] In practical applications, the heat conduction structure 154 can be an annular structure at the bottom of the cooling device 150, but it can also be other structural types, which are not limited in this invention. For example, in one embodiment, the heat conduction structure 154 comprises multiple uniformly distributed cylindrical structures, with adjacent cylindrical structures being separate from each other. In practical applications, the size of the heat conduction structure 154, i.e., the size of the contact surface between the cooling device 150 and the cavity top cover 101, needs to be precisely controlled. If the contact surface is too large, it can easily cause over-cooling of the cavity top cover 101 by the cooling device 150, thus preventing the cavity top cover 101 from reaching the set temperature; if the contact surface is too small, the cooling effect on the cavity top cover 101 may be limited, making effective temperature control impossible. Optionally, the projected area of ​​the heat conduction structure 154 on the cavity top cover 101 is 1% to 50% of the projected area of ​​the cooling device 150 on the cavity top cover 101, preferably 5% to 20%. Of course, the percentage of the heat conduction structure 154 can be other values. This utility model does not limit this and can be selected and set according to the actual situation. For example, it can be selected based on the materials used to prepare the cooling device 150 and the heat conduction structure 154, combined with the required heat conduction efficiency, space constraints, cost and other factors.

[0073] In practical applications, the cooling device 150 can be integrally manufactured with the heat conduction structure 154 to ensure the tightness and strength of the connection between the cooling device 150 and the heat conduction structure 154, improve the stability of the overall structure, and reduce the thermal resistance in the heat conduction path, thereby improving the heat conduction efficiency. On the other hand, the integrally manufactured cooling device 150 and heat conduction structure 154 can simplify the manufacturing process and help reduce production costs.

[0074] On the other hand, in this invention, the thin film deposition apparatus also includes a temperature sensor (e.g., a thermocouple) for monitoring the temperature of the cavity top cover 101. The temperature sensor is in contact with the cavity top cover 101 to monitor the temperature change of the cavity top cover 101 in real time and accurately. Based on the above, the temperature can be adjusted in a timely manner by the cooling device 150 based on the temperature change of the cavity top cover 101, ensuring the timeliness and accuracy of temperature control. This method helps to reduce the thermal stress and fatigue of the cavity top cover 101 and its surrounding components caused by temperature fluctuations, thereby extending its service life. On the other hand, by reducing the temperature fluctuation of the cavity top cover 101, the fluctuation of the temperature field distribution inside the cavity can be reduced, which helps to ensure the quality of thin film deposition. On the other hand, in practical applications, a fourth heater can be additionally provided to heat part of the cavity top cover 101, thereby achieving active temperature control of the cavity top cover 101. By combining the cooling device 150, the fourth heater, and the temperature sensor (the cooling device 150 is used to eliminate the unnecessary passive heating effect caused by the RF isolation ring 122), the chamber top cover 101 can be maintained at a preset temperature, thereby ensuring the stability of the process.

[0075] In summary, the thin film deposition apparatus of this invention combines a first heater 124 and a cooling device 150, etc. The first heater 124 precisely controls the temperature of the radio frequency isolation ring 122, and the cooling device 150 precisely controls the temperature of the cavity top cover 101 to meet the different temperature requirements of the adjacent radio frequency isolation ring 122 and the cavity top cover 101. This method can not only reduce particulate contamination in the cavity, but also ensure the sealing of the connection between the cavity top cover 101 and its surrounding components, which helps to ensure the stability of the vacuum environment in the cavity, improve the stability and reliability of the thin film deposition apparatus, and extend the service life of the equipment.

[0076] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0077] In the description of this utility model, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0078] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0079] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0080] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above content. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A thin film deposition apparatus, characterized by, Include: A vacuum reaction chamber, comprising a reaction chamber body and a chamber top cover connected to the reaction chamber body; The upper electrode assembly is disposed at the top of the vacuum reaction chamber; The lower electrode assembly for carrying the wafer is disposed opposite to the upper electrode assembly; A radio frequency power supply for providing radio frequency energy is connected to the upper electrode assembly and / or the lower electrode assembly; A radio frequency isolation ring is disposed between the upper electrode assembly and the cavity top cover and extends below the cavity top cover, and the radio frequency isolation ring has a first heater inside; A cooling device is connected to the top cover of the cavity.

2. The thin film deposition apparatus as described in claim 1, characterized in that, The cooling device includes a coolant inlet and a coolant outlet, as well as a cooling passage connecting the two.

3. The thin film deposition apparatus as described in claim 2, characterized in that, The cooling channel has a square or circular cross-section.

4. The thin film deposition apparatus as claimed in claim 1, characterized in that, The cooling device is located inside, above, or on the side of the cavity top cover.

5. The thin film deposition apparatus of claim 1, wherein Also includes: A temperature sensor used to monitor the temperature of the cavity top cover is in contact with the cavity top cover.

6. The thin film deposition apparatus as claimed in claim 1, characterized in that, The cooling device is in contact with the top cover of the cavity through a heat conduction structure.

7. The thin film deposition apparatus as claimed in claim 6, characterized in that, The projected area of ​​the heat conduction structure on the top cover of the cavity is 1% to 50% of the projected area of ​​the cooling device on the top cover of the cavity.

8. The thin film deposition apparatus as claimed in claim 6, characterized in that, The cooling device is integrally manufactured with the heat conduction structure.

9. The thin film deposition apparatus as claimed in claim 1, characterized in that, The cooling device is made of at least one of copper, aluminum, and stainless steel.

10. The thin film deposition apparatus as claimed in claim 1, characterized in that, The cooling device has a ring structure; Alternatively, the cooling device may comprise a plurality of circumferentially distributed arc-shaped structures.

11. The thin film deposition apparatus as claimed in claim 1, characterized in that, The cooling device is connected to the cavity top cover by a mechanical fastening device.

12. The thin film deposition apparatus as claimed in claim 1, characterized in that, The radio frequency isolation ring includes a first isolation ring and a second isolation ring located below the first isolation ring. The second isolation ring forms a groove structure in which the first heater is placed. The first isolation ring is made of ceramic material, and the second isolation ring is made of quartz material.

13. The thin film deposition apparatus as claimed in claim 12, characterized in that, The first isolation ring has a first planar structure, and the cross-section of the second isolation ring is generally L-shaped. The second isolation ring includes a vertical surface and a second planar structure.

14. The thin film deposition apparatus as claimed in claim 1, characterized in that, The first heater has a heat insulation structure between it and the top cover of the cavity.

15. The thin film deposition apparatus as claimed in claim 1, characterized in that, The upper electrode assembly includes: The mounting base is connected to the top cover of the cavity; A gas spray plate, which is connected to the mounting base; A second heater for heating the gas spray plate is disposed above the gas spray plate.

16. The thin film deposition apparatus as claimed in claim 15, characterized in that, The top cover of the cavity has a through hole, and the mounting base has a concave structure. The mounting base is disposed through the through hole, the bottom of the mounting base is located inside the vacuum reaction chamber, and its top edge is at least partially located above the top cover of the cavity.

17. The thin film deposition apparatus as claimed in claim 15, characterized in that, The second heater is located above the mounting base.

18. The thin film deposition apparatus as claimed in claim 1, characterized in that, The thin film deposition apparatus is a plasma-enhanced chemical vapor deposition apparatus.

Images