A topology for using intelligent power modules

Abstract

This invention discloses a topology for an intelligent power module. The intelligent power module has multiple groups of power devices arranged on a DBC substrate, forming four bridge arm structures. The intelligent power module also has multiple external pins corresponding to the connection terminals of each of the four bridge arm structures. By adjusting the connection method of these external pins, the intelligent power module can form different topologies. Compared with existing technologies, this invention can adapt to different circuit structures and meet the diverse circuit design needs of users by adjusting the connection method of the intelligent power module's external pins.

Description

Technical Field

[0001] This utility model relates to an on-board charger for electric vehicles, and in particular to a topology that utilizes a smart power module. Background Technology

[0002] As a core component of electric vehicles, the on-board charger (OBC) needs to have multiple energy conversion functions. To achieve the energy conversion functions required by the OBC charger, the key power electronic devices in the OBC include: power semiconductor devices.

[0003] In current technologies, most power devices employ independent packaging solutions. This discrete device approach faces the following drawbacks in OBC charger applications: 1. Increased production line assembly costs: Each device requires individual mounting and soldering, and costs increase further with the increase in the number of devices. 2. Low structural space utilization: Discrete devices involve a three-level stacking structure. Considering safety spacing and crosstalk issues, this leads to a reduction in the effective PCB area and an increase in the proportion of ineffective areas. 3. Increased circuit loops, resulting in increased parasitic parameters, especially in high-power applications like chargers, which significantly affects efficiency and increases device voltage stress. Furthermore, the independent packaging solutions used in current technologies only adapt to a limited number of circuit topologies, failing to meet the diverse circuit design needs of users.

[0004] Therefore, how to design a topology for intelligent power modules that can adapt to various circuit topologies and meet the needs of different user circuit designs is a technical problem that the industry urgently needs to solve. Utility Model Content

[0005] To address the problem that existing independent packaging solutions cannot adapt to various circuit topologies and cannot meet the different circuit design needs of users, this utility model proposes a topology that utilizes intelligent power modules.

[0006] The technical solution of this utility model is to propose a topology structure for using a smart power module. The smart power module has multiple sets of power devices arranged on a DBC substrate, and the multiple sets of power devices constitute four bridge arm structures. The smart power module also has multiple external pins corresponding to the connection ends of each bridge arm of the four bridge arm structures.

[0007] The intelligent power module can form different topologies by adjusting the connection method of the external pins.

[0008] Compared with the prior art, the present invention has at least the following beneficial effects:

[0009] This invention has multiple external pins, and by adjusting the connection method of the external pins, it can adapt to different circuit structures and meet the different circuit design needs of users. Attached Figure Description

[0010] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 This is a plan view of the intelligent power module of this utility model without the integrated driver IC;

[0012] Figure 2 This is a plan view of the intelligent power module of this utility model when a driver IC is integrated;

[0013] Figure 3 This is a simplified circuit diagram of the intelligent power module without integrated driver IC.

[0014] Figure 4 This is a simplified circuit diagram showing a connection method of internal bonding wires for two sets of bridge arms in this utility model.

[0015] Figure 5 This is a simplified circuit diagram showing the connection method of the internal bonding wires of the four bridge arms in this utility model;

[0016] Figure 6 This is a simplified circuit diagram of the intelligent power module with integrated driver IC in this utility model;

[0017] Figure 7 The voltage stress waveforms of each switching transistor before applying this utility model are shown.

[0018] Figure 8 The voltage stress waveforms of each switching transistor after applying this utility model are shown.

[0019] Figure 9 A simplified circuit diagram for charging a 6.6kW-OBC high-voltage battery;

[0020] Figure 10 A simplified equivalent circuit diagram for charging a high-voltage battery from a DC bus voltage.

[0021] Figure 11 This is a schematic diagram illustrating the application of the intelligent power module of this invention without integrated driver IC to a 6.6kW-OBC circuit (PFC+DAB primary side);

[0022] Figure 12 This is a schematic diagram illustrating the application of the intelligent power module with integrated driver IC in a 6.6kW-OBC circuit (PFC+DAB primary side).

[0023] Figure 13 This is a schematic diagram illustrating the application of the intelligent power module of this invention without integrated driver IC to a 6.6kW-OBC-DAB circuit.

[0024] Figure 14 This is a schematic diagram illustrating the application of the intelligent power module with integrated driver IC in a 6.6kW-OBC-DAB circuit.

[0025] Figure 15 A simplified circuit diagram for charging a low-voltage battery from a high-voltage battery;

[0026] Figure 16 This is a schematic diagram illustrating the application of the intelligent power module of this invention, without the integrated driver IC, in a high-voltage battery charging circuit for a low-voltage battery.

[0027] Figure 17 This is a schematic diagram illustrating the application of the intelligent power module of this utility model, which integrates a driver IC, in a high-voltage battery charging circuit for a low-voltage battery.

[0028] Figure 18 A simplified circuit diagram of a three-phase OBC front-end (three-phase four-arm bridge);

[0029] Figure 19 This is a schematic diagram of the implementation of the intelligent power module of this utility model in the front-end PFC circuit of a three-phase OBC without the integrated driver IC;

[0030] Figure 20 This is a schematic diagram of the implementation of the intelligent power module with integrated driver IC in the front-end PFC circuit of a three-phase OBC.

[0031] Figure 21 A simplified circuit diagram of a series-parallel combined output module;

[0032] Figure 22 This is a schematic diagram illustrating the application of the intelligent power module of this invention without integrated driver IC to a series-parallel combined output module.

[0033] Figure 23 This is a schematic diagram illustrating the application of the intelligent power module with integrated driver IC to a series-parallel combined output module.

[0034] Figure 24 A simplified circuit diagram of a series-parallel combined input module;

[0035] Figure 25 This is a schematic diagram illustrating the application of the intelligent power module of this invention without integrated driver IC to a series-parallel combined input module.

[0036] Figure 26 This is a schematic diagram illustrating the application of the intelligent power module with integrated driver IC to a series-parallel combined input module.

[0037] Figure 27 This is a simplified circuit diagram of a single-phase, single-stage OBC.

[0038] Figure 28 This is a schematic diagram illustrating the application of the intelligent power module of this invention without integrated driver IC to a single-phase single-stage OBC.

[0039] Figure 29 This is a schematic diagram illustrating the application of the intelligent power module with integrated driver IC of this utility model to a single-phase single-stage OBC.

[0040] Figure 30 This is a simplified circuit diagram of a four-bridge-arm circuit;

[0041] Figure 31 This is a schematic diagram illustrating the application of the intelligent power module of this invention to a four-bridge arm circuit without the integrated driver IC.

[0042] Figure 32 This is a schematic diagram illustrating the application of the intelligent power module with integrated driver IC in a four-bridge circuit. Detailed Implementation

[0043] To make the technical problems, technical solutions, and beneficial effects of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0044] The principle and structure of this utility model will be described in detail below with reference to the accompanying drawings and embodiments.

[0045] This invention proposes a topology for an intelligent power module. The intelligent power module has multiple sets of power devices arranged on a DBC substrate, and the multiple sets of power devices form four bridge arm structures. The intelligent power module also has multiple external pins corresponding to the connection terminals of each of the four bridge arm structures.

[0046] The intelligent power module can be configured into different topologies by adjusting the connection method of the external pins.

[0047] The intelligent power module of this invention integrates eight transistor wafers and eight diode wafers, which are connected through internal bonding wires and external power and control pins. It is compatible with different isolated / non-isolated converters with four bridge arm structures. Furthermore, this invention can integrate a driver IC to meet different circuit requirements.

[0048] Specifically, the intelligent power module proposed in this utility model includes a DBC substrate, a thermally conductive medium layer and multiple power components placed sequentially on the same side of the DBC substrate. The DBC substrate includes a power side with multiple power pins and a signal side with multiple signal pins.

[0049] Power devices are electrically connected via bonding wires or power pins and control pins.

[0050] As can be seen from the above configuration, this utility model integrates multiple power devices, that is, it centrally packages multiple power devices. Compared with the independent packaging solution, it can save more than 30% of the heat sink volume in actual implementation. In addition, the solution of integrating multiple power devices can support higher density PCB layout and optimize the three-dimensional space structure of the charger. It can also be compatible with SMT mounting process, shorten the time of automated production line, and only two integrated modules are needed to complete most of the multi-stage high voltage conversion circuit requirements of the charger.

[0051] This invention can bridge different bridge arms inside the package using bonding wires to form isolated and non-isolated solutions; it can also form an electrical connection with an external PCB through external power pins and control pins, allowing for flexible circuit design as needed.

[0052] In this invention, each power device group includes transistor wafers and diode wafers placed vertically. The transistor wafers and diode wafers are connected by bonding wires to form a single transistor unit. Adjacent single transistor units are connected in series by bonding wires to form a bridge arm.

[0053] In this invention, there are 8 groups of power devices, which constitute four bridge arm structures. The four bridge arms of the four bridge arm structures are arranged horizontally in sequence on the DBC substrate. An isolation strip for electrical isolation is provided between the first and second bridge arms and the third and fourth bridge arms of the four bridge arm structures.

[0054] Based on the above settings, please refer to Figure 1 The intelligent power module proposed in this utility model has a core structure consisting of four bridge arms and adopts multi-chip module (MCM) packaging technology. It includes 8 transistor wafers and 8 diode wafers for integrated packaging, wherein the power transistor wafers and diode wafers work in parallel.

[0055] Specifically, the aforementioned intelligent power module includes a copper-clad ceramic DBC substrate, eight sets of power devices (each set of power devices includes a transistor wafer and a diode wafer), and a thermally conductive dielectric layer;

[0056] In this configuration, all power devices and the thermally conductive dielectric layer are arranged on the same side of the DBC substrate, with the DBC substrate and the thermally conductive dielectric layer stacked together. The thermally conductive dielectric layer is positioned to contact both the power devices and the DBC substrate. This allows the heat generated by the eight power devices to be transferred through the thermally conductive dielectric layer to the DBC substrate and then dissipated through it. The thermally conductive dielectric layer reduces the thermal resistance between the power devices and the DBC substrate, thus improving heat dissipation efficiency.

[0057] In the stacking direction, the area of ​​the thermally conductive medium layer is larger than the area of ​​the power device. This allows the power device to make full contact with the thermally conductive medium layer, while also having a larger contact area with the DBC substrate, thereby improving the heat transfer efficiency from the power device to the DBC substrate.

[0058] from Figure 1 As can be seen, each transistor wafer (T) corresponds to a diode wafer (D) arranged in a vertical structure, and they are interconnected by bonding wires to form a single-transistor unit;

[0059] The high-side power transistors (single-transistor units located at the top of the same bridge arm; taking the first bridge arm as an example, its high-side power transistor is a single-transistor unit composed of transistor wafer T1 and diode wafer D1) and the low-side power transistors (single-transistor units located at the bottom of the same bridge arm; taking the first bridge arm as an example, its low-side power transistor is a single-transistor unit composed of transistor wafer T3 and diode wafer D3) are arranged adjacent to each other, such as... Figure 1 As shown, eight power devices are connected in series by bonding wires to form a bridge arm. In this invention, eight power devices are arranged into four bridge arms (namely, the first bridge arm, the second bridge arm, the third bridge arm, and the fourth bridge arm), which are symmetrically distributed laterally along the DBC substrate. An isolation strip is provided between the first bridge arm, the second bridge arm, the third bridge arm, and the fourth bridge arm for electrical isolation.

[0060] The four bridge arms can be electrically connected to the PCB via external power and control pins, or they can be electrically connected inside the package via internal bonding wires, thus meeting the needs of flexible circuit design.

[0061] like Figure 4 This utility model is an embodiment in which the first bridge arm and the second bridge arm are connected by a bonding wire to form a pair of bridge arms, and the third bridge arm and the fourth bridge arm are connected by a bonding wire to form a pair of bridge arms, thus forming two sets of isolated full-bridge bridge arm structures.

[0062] Figure 5 This is an embodiment of the present invention in which the first to fourth bridge arms are all bridging each other by bonding wires to form a non-isolated four-bridge arm structure.

[0063] Please see Figure 1 On the first side of both sides of the plastic seal ( Figure 1 The upper part) is the control side, the second side ( Figure 1 The lower part of the bridge is the power side, which is provided with multiple external pins. The control side is the control pin, and the power side is the power pin. Different phase bridge arms of this utility model can also be connected to the PCB or other components through the above-mentioned power pins and control pins for electrical connection.

[0064] This utility model provides an electrical connection method as follows:

[0065] Each of the four bridge arms in the structure includes a high-side power transistor and a low-side power transistor;

[0066] Connect the control pin corresponding to the high-side power transistor to the drive ground and drive signal. The drive ground is connected to the midpoint of the corresponding phase bridge arm through the control pin and bonding wire. The power pin corresponding to the high-side power transistor is used to connect to the positive terminal of the common DC bus.

[0067] The control pins corresponding to the low-side power transistors are connected to the drive ground and the drive signal. The drive ground is connected to the negative terminal of the common DC bus through the control pins. The power pins corresponding to the low-side power transistors are connected to the midpoint of the corresponding bridge arm and are connected in series with the high-side power transistors through bonding wires.

[0068] Optionally, in other embodiments of this utility model, the power pins of the high-side power transistors of the four bridge arms can be connected to the positive terminal of the common DC bus, and the control pins of the low-side power transistors of the four bridge arms can be connected to the negative terminal of the common DC bus. Electrical connections can be made internally via bonding wires as needed, or via external PCB traces or components.

[0069] In this invention, each power device group includes a transistor wafer and a diode wafer. The transistor wafer can be selected from any one of the following: an insulated bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET), or a gallium nitride device (GaN).

[0070] The diode wafer selection can be any one of the following: transistor-matched fast recovery diode (FRD) or Schottky diode (SBD), or silicon carbide diode (SiC SBD);

[0071] When the transistor wafer uses IGBT, the emitter of the transistor wafer is connected to the power pin, and the collector and gate of the transistor wafer are connected to the control pin.

[0072] When the transistor wafer uses a MOSFET or SiC MOSFET, the drain of the transistor wafer is connected to the power pin, and the source and gate of the transistor wafer are connected to the control pin.

[0073] Please see Figure 2 Furthermore, this invention can also integrate a driver chip, i.e., a driver IC, which can be connected to power devices, power pins, and control pins via a micro PCB or bonding wires. By packaging the driver IC and power devices together on the DBC substrate in this way, the gate trace length is shortened, drive signal interference is reduced, and power density is further improved.

[0074] The difference after driver IC integration lies in the change of control pins; please refer to [link / reference]. Figure 6 Each driver IC drives one bridge arm, corresponding to two single-tube units. A single driver IC is connected to the external pins on the control side via a bonding wire or a micro PCB.

[0075] Each driver chip includes pins VHI, VLI, and VDD for power supply, VSS for drive ground, VS(11) and VS(12) for isolated drive ground, ITRIP for overcurrent protection, VFO for temperature sampling, and HIN and LIN for PWM signal ports. It should be noted that... Figure 6 The descriptions in the document are of some basic functional pins of the driver IC. More expansion pins are required for more functions.

[0076] In this invention, the DBC substrate includes an upper copper layer for soldering power devices, an insulating layer for insulation and electrical isolation, and a lower copper layer for heat dissipation, which are placed sequentially. The power devices transfer heat to the upper copper layer through the thermally conductive medium layer.

[0077] Power devices are soldered onto the DBC substrate using a combination of reflow soldering and eutectic soldering. The sintering process for transistor wafers and diode wafers is carried out in a nitrogen atmosphere. The outer shell of the DBC substrate is made of epoxy resin with a low dielectric constant.

[0078] Specifically, the DBC substrate consists of a three-layer structure: an upper copper layer (for soldering power devices), an insulating layer (alumina Al2O3 or aluminum nitride AlN), and a lower copper layer (heat dissipation coating). The upper copper layer is etched to form a high-voltage isolation band, while the lower copper layer serves as a continuous heat dissipation surface, making it a substrate with excellent thermal conductivity. All heat sources, namely transistor wafers and diode wafers, are mounted on the DBC substrate to fully utilize the heat transfer capabilities of this package. This centralized packaging solution effectively reduces the size of the PCB and ASIC, simplifies the assembly process, and improves production line placement efficiency.

[0079] The thermally conductive medium layer is in close contact with the upper copper layer of the DBC, so that the heat generated by the power device is transferred to the upper copper layer of the DBC substrate through the thermally conductive medium, and then transferred to the lower copper layer through the insulating layer in the DBC substrate, thus achieving the heat dissipation target of the DBC substrate for the power device.

[0080] In other embodiments of this utility model, the thermal conductive medium layer is welded and bonded to the upper copper layer of the DBC substrate, so that the thermal conductive medium layer and the upper copper layer of the DBC substrate are integrally formed.

[0081] The material of the heat-conducting medium layer is not limited; it can be a copper layer.

[0082] To ensure efficient heat transfer from the power device to the DBC substrate, the thermally conductive dielectric layer should fully cover the projection of the power device along the stacking direction to increase the effective contact area between the power device and the thermally conductive dielectric layer. Simultaneously, a sufficiently large contact area should be maintained between the thermally conductive dielectric layer and the copper layer on the DBC substrate to effectively reduce the thermal resistance between the power device and the copper layer on the DBC substrate, thereby improving the heat dissipation performance of the power device. It is worth noting that there is no specific limitation on the size of the thermally conductive dielectric layer; it depends on the internal space. A larger projected area of ​​the thermally conductive dielectric layer along the stacking direction results in better heat dissipation.

[0083] Please see Figure 1 This utility model contains a total of 8 power devices, consisting of 8 transistor wafers (T1~T8) and 8 diode wafers (D1~D8), with QxH defined as the high-side transistor and QxL defined as the low-side transistor;

[0084] Power pins: Located on one side of the smart power module, all high-side and low-side transistors are connected to their drains inside the smart power module. The drain of the high-side transistor is usually connected to the positive terminal of the DC bus, and the drain of the low-side transistor is the midpoint of the bridge arm.

[0085] Control pins: Located on the other side of the intelligent power module, including gate drive signals (PWM1-PWM8) and drive ground GND. The drive ground of the high-side transistors is electrically connected to the midpoint of the bridge arm; the drive ground of the low-side transistors is connected to the negative terminal of the DC bus.

[0086] For an example using MOSFETs, please see [link to relevant documentation]. Figure 3 The drain of the high-side transistor Q1H is connected to the power pin via a copper trace. The source of the high-side transistor Q1H is connected to the drain of the low-side transistor Q1L, and is also connected to the power pin and the control pin respectively. The gate of the high-side transistor Q1H is connected to the control pin. In addition, the gate and source of the low-side transistor Q1L are connected to the control pin. The high-side transistor Q1H and the low-side transistor Q1L form a half-bridge arm. The entire power module contains a total of 4 half-bridge arms. The four arms are connected to the PCB via external pins, and the electrical connection method of the four half-bridge arms can be freely designed externally.

[0087] In addition to the independent four-arm configuration, electrical connections between different arms can also be achieved within the package via bonding wires. Figure 4 One possible implementation is shown, where the drains of the high-side transistors of the first and second bridge arms and the sources of the low-side transistors of the first and second bridge arms are connected to form a full bridge. Similarly, the drains of the high-side transistors of the third and fourth bridge arms and the sources of the low-side transistors of the third and fourth bridge arms are connected to form a full bridge. Figure 5 Another possible internal bonding method is demonstrated, which connects the drain of the high-side tubes and the source of the low-side tubes of the four bridge arms respectively to form a four-bridge arm structure.

[0088] The power pins and control pins are placed on opposite sides of the intelligent power module, with differentiated pin spacing. Reasons: 1. During operation, a large current flows into the power device through the power port and exits through another power port (placed on the control side as control ground). This large current is the main cause of heat generation in the power device; placing the pins on opposite sides facilitates heat dissipation. 2. The intelligent power module is divided into control pins and power pins, which helps ensure the integrity of the drive signal and reduces distortion. 3. The control pins include drive signal pins and drive ground pins; placing them close together ensures the integrity of the drive signal, while the spacing between the different power pins should be sufficiently large to meet creepage and insulation distance requirements.

[0089] In summary, this utility model has at least the following features and beneficial effects:

[0090] 1. This utility model integrates four-arm 8-transistor wafers (T1~T8) and diode wafers (D1~D8) for packaging. The power terminals of each component face the same side of the intelligent power module and are connected to the power pins through copper traces. Compared with independent packaging solutions, this design saves more than 30% of the heat sink volume, supports higher density PCB layout, optimizes the three-dimensional space structure of the charger, and is compatible with SMT mounting technology, shortening the automation production time. Only two integrated modules are needed to complete most of the multi-stage high-voltage conversion circuit requirements of the charger.

[0091] 2. This utility model features an internal bonding wire and external power and control pin connection scheme. It can bridge different bridge arms within the package via bonding wires, forming isolated and non-isolated solutions. The control and power pins establish electrical connections with the external PCB. This allows for flexible circuit design as needed, providing flexible circuit design and upgrade solutions.

[0092] 3. This utility model also provides a solution for integrating the driver IC, directly integrating the driver IC onto the DBC substrate and connecting it to the power transistor, control pin, and power pin via bonding wires. It also includes a built-in temperature sensor that can report the internal temperature of the package via a signal interface. This configuration features a shorter gate loop, which helps reduce path parasitic parameters and reduces switching losses by approximately 22% compared to external driver switches. See [link to relevant documentation]. Figure 7 and Figure 8 With the above-mentioned settings, without considering additional absorption circuits, the intelligent power module of this invention can effectively reduce parasitic parameters, thereby reducing the peak voltage of the switching transistor.

[0093] The above configuration features a deeply integrated solution, which simplifies system design and increases reliability; it eliminates the need for external drive switches, increases the effective utilization area of ​​the PCB, and improves development efficiency.

[0094] 4. The power pins and control pins are located on different sides of the intelligent power module, with differentiated pin spacing. This arrangement can reduce coupling crosstalk between the power pins and control pins, and also facilitates the heat dissipation of the power device by dissipating heat generated by the power device from each power-side pin.

[0095] 5. The DBC substrate consists of a three-layer structure; this design improves the thermal conductivity between the power devices and the DBC substrate, and the upper copper layer also undertakes most of the connection needs of the power devices.

[0096] The intelligent power module of this utility model also has a variant:

[0097] The core of this invention lies in the integration of eight transistor wafers, placed on a DBC substrate and bonded with wires for heat dissipation and electrical connection, primarily targeting 6.6kW-OBC and 11 / 22kW-OBC. Variation 1: The wafer arrangement may differ, for example, arranged in pairs vertically, with four horizontal columns. Variation 2: The bonded wire connection method may differ. As mentioned earlier, bonded wires can achieve the following within the module: four bridge arms are independent; each pair of bridge arms is electrically connected; an isolation strip is placed between two sets of full-bridge arms; and the four-phase bridge arms are directly electrically connected inside the module. Variation 3: Also using eight wafers for integrated packaging, but the high and low-side power transistors do not use a series connection (head-to-tail). Instead, through variations in the bonded wire connection method, a head-to-tail connection is adopted for multi-level topologies.

[0098] Furthermore, the intelligent power module proposed in this invention can also form different topologies by adjusting the connection method of each external pin on the intelligent power module, that is, adapt to different circuit needs.

[0099] Specifically, the aforementioned intelligent power module integrates four bridge arm structures. This utility model provides the intelligent power module with pins HO1, LO1, and SS1 corresponding to the first group of bridge arms in the four bridge arm structures, pins HO2, LO2, and SS2 corresponding to the second group of bridge arms in the four bridge arm structures, pins HO3, LO3, and SS3 corresponding to the third group of bridge arms in the four bridge arm structures, and pins HO4, LO4, and SS4 corresponding to the fourth group of bridge arms in the four bridge arm structures.

[0100] Pin HO1 is connected to the upper end of the first group of bridge arms, pin LO1 is connected to the midpoint of the first group of bridge arms, and pin SS1 is connected to the lower end of the first group of bridge arms.

[0101] Pin HO2 is connected to the upper end of the second bridge arm, pin LO2 is connected to the midpoint of the second bridge arm, and pin SS2 is connected to the lower end of the second bridge arm.

[0102] Pin HO3 is connected to the upper end of the third bridge arm, pin LO3 is connected to the midpoint of the third bridge arm, and pin SS3 is connected to the lower end of the third bridge arm.

[0103] Pin HO4 is connected to the upper end of the fourth bridge arm, pin LO4 is connected to the midpoint of the fourth bridge arm, and pin SS4 is connected to the lower end of the fourth bridge arm.

[0104] The aforementioned pins HO1, HO2, HO3, HO4, LO1, LO2, LO3, LO4, SS1, SS2, SS3, and SS4 are also the aforementioned external pins. This invention can adapt to different circuit structures by adjusting the connection method of the aforementioned pins.

[0105] The connection methods of this utility model adapted to different circuit structures are described below:

[0106] This invention is applicable to 6.6kW-OBC high-voltage battery charging circuits. The key AC-DC conversion circuit of the 6.6kW-OBC high-voltage battery charging circuit includes a pre-stage totem-pole PFC and a post-stage DAB circuit, comprising 6 bridge arms corresponding to 12 power transistors. The intelligent power module of this invention can be used in the PFC and DAB primary-side circuits (4 non-isolated bridge arms in total). Figure 9 As shown, it can also be used to implement the primary and secondary circuits of a DAB (4 isolated bridge arms). Figure 10 As shown;

[0107] Please see Figure 9The input side includes an AC input, which is connected to the first and second bridge arms of the smart power module via an input terminal and an EMC filter, as well as a PFC inductor. The PFC output is equipped with a 1200μF capacitor to provide a stable DC bus voltage.

[0108] Please see Figure 11 This utility model is applied in Figure 9 In this circuit connection method, pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus, pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus, pin LO1 is connected to the positive terminal of the AC input, pin LO2 is connected to the negative terminal of the AC input, pin LO3 is connected to the same-name terminal of the primary winding of the transformer, and pin LO4 is connected to the opposite-name terminal of the primary winding of the transformer.

[0109] Please see Figure 12 It is an intelligent power module with integrated driver IC applied to Figure 9 The connection method of the circuit, its specific connection method and Figure 11 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here;

[0110] It can be seen Figure 13 This utility model is applied in Figure 10 In this circuit connection method, pins HO1 and HO2 are connected to the positive terminal of the DC bus, pins SS1 and SS2 are connected to the negative terminal of the DC bus, pins HO3 and HO4 are connected to the positive terminal of the high-voltage battery, pins SS3 and SS4 are connected to the negative terminal of the high-voltage battery, pin LO1 is connected to the same-name terminal of the primary winding of the transformer after a series impedance element, pin LO2 is connected to the opposite-name terminal of the primary winding of the transformer, pin LO3 is connected to the same-name terminal of the secondary winding of the transformer, and pin LO4 is connected to the opposite-name terminal of the secondary winding of the transformer.

[0111] The four bridge arms of the intelligent power module are electrically connected, that is, all high-side power transistors are connected to the positive terminal of the DC bus, and all low-side power transistors are connected to the negative terminal of the DC bus. Therefore, the four bridge arms can be connected by bonding wires inside the package or by external PCB wiring.

[0112] The above connection method does not integrate a driver IC; instead, it uses an external isolated driver IC on the control side. The driver IC controls the power devices based on the PWM signals issued by the control IC. Optionally, this circuit structure can also be further integrated using a driver IC package. Please refer to [link to relevant documentation]. Figure 14 ,and Figure 13The difference lies in the control pins of the packaged modules: the control IC sends control signals, chip power supply, temperature sampling and other non-isolated signals according to the working status of the charger to the driver IC through the external pins of the package. A single driver IC sends two isolated drive outputs to control the two-phase bridge arm of PFC and the primary side bridge arm of DAB to perform the operation.

[0113] Figure 13 Unlike Figure 11 In the circuit implementation operation, since there is no electrical connection between the first bridge arm, the second bridge arm and the third bridge arm, the fourth bridge arm, they should not be packaged with bonding wires. At the same time, the isolation strip (spacing ≥8mm) should meet the creepage distance and space clearance (≥5mm) to meet the insulation requirements and voltage breakdown between the primary / secondary bridge arms.

[0114] Optionally, since there is electrical isolation between the first bridge arm, the second bridge arm and the third bridge arm, and the fourth bridge arm, the first bridge arm and the second bridge arm can be electrically connected through bonding wires within the integrated package, and the third bridge arm and the fourth bridge arm can be electrically connected through bonding wires. Alternatively, flexible circuit design can be carried out directly through an external PCB.

[0115] Furthermore, this utility model can also be applied to, for example... Figure 15 In the high-voltage battery charging circuit for the low-voltage battery shown, in this embodiment, please refer to... Figure 16 The topology of the aforementioned intelligent power module includes: a high-voltage side charging circuit and a low-voltage side charging circuit, which share a high-voltage battery for charging.

[0116] Pins HO1 and HO2 are connected to the positive terminal of the high-voltage battery, pins SS1 and SS2 are connected to the negative terminal of the high-voltage battery, pin LO1 is connected to the same-name terminal of the secondary winding of the high-voltage transformer, and pin LO2 is connected to the opposite-name terminal of the secondary winding of the high-voltage transformer.

[0117] Pins HO3 and HO4 are connected to the positive terminal of the high-voltage battery, pins SS3 and SS4 are connected to the negative terminal of the high-voltage battery, pin LO3 is connected to the same-name terminal of the primary winding of the low-voltage transformer, and pin LO4 is connected to the opposite-name terminal of the primary winding of the low-voltage transformer.

[0118] Please see Figure 15 The low-voltage side charging circuit shares the positive terminal HV+ and negative terminal HV- of the high-voltage battery with the high-voltage side charging circuit, and is directly electrically connected. Therefore, the four bridge arms can be directly connected inside the integrated package, or electrically connected to external components through the PCB. Optional pin HO3 is connected to the positive terminal HV+ of the high-voltage battery, pin LO3 is connected to the corresponding terminal of the primary winding of the low-voltage side transformer, and pin SS3 is connected to the negative terminal HV- of the high-voltage battery.

[0119] Optional pin HO4 is connected to the positive terminal HV+ of the high-voltage battery, pin LO4 is connected to the opposite terminal of the primary winding of the low-voltage transformer, and pin SS4 is connected to the negative terminal HV- of the high-voltage battery.

[0120] Please see Figure 17 It is an intelligent power module with integrated driver IC applied to Figure 15 The connection method of the circuit, its specific connection method and Figure 16 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here.

[0121] Furthermore, this utility model can also be adapted to 11kW / 22kW-OBCs that support three-phase AC input. The charger has the following functions: three-phase PFC mode: converting three-phase AC power to DC power to charge the high-voltage battery; single-phase PFC mode: converting single-phase AC power to DC power to charge the high-voltage battery; single-phase inverter (V2L) mode: in-vehicle inverter, similar to single-phase PFC, but with reversed power flow; three-wire inverter mode (V2H) mode; DC-DC mode: high-voltage battery charging low-voltage battery.

[0122] To achieve the many functions of a three-phase OBC, unlike a single-phase OBC, the pre-amplifier (PFC) stage requires a four-arm structure, such as... Figure 18 As shown, the circuit structure includes four bridge arms, which can be implemented by the intelligent power module of this invention. By configuring different relay working states and controlling different PWM drive waves, the switching of multiple working modes can be realized.

[0123] Please see Figure 19 In this application circuit, pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus, pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus, pin LO1 is connected to the A-phase AC input, pin LO2 is connected to the B-phase AC input, pin LO3 is connected to the C-phase AC input, and pin LO4 is connected to the N-line interface terminal.

[0124] It also includes a relay with one end connected to the midpoint of the bus capacitor, and the other end of the relay connected between pin LO4 and the N-line interface terminal;

[0125] When the relay is open, the topology of the intelligent power module operates in single-phase mode; when the relay is closed, the topology of the intelligent power module operates in three-phase mode.

[0126] In single-phase mode, the relay connected at the midpoint of the bus capacitor is disconnected. Optionally, the fourth bridge arm can be used as a slow transistor to form a totem pole PFC circuit structure. Alternatively, no slow transistor can be set, and it can work according to the single-phase Boost PFC working principle. The different circuit working modes are determined by the way the driver IC drives the power transistor.

[0127] In three-phase inverter (V2H) mode, the relay connected at the midpoint of the bus capacitor closes, and the fourth bridge arm participates in high-frequency operation to control the zero-sequence and negative-sequence currents caused by unbalanced loads.

[0128] Please see Figure 20 It is an intelligent power module with integrated driver IC applied to Figure 18 The connection method of the circuit, its specific connection method and Figure 19 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here.

[0129] Furthermore, this invention can also be applied to series-parallel combined output modules. The converter has the following functions: low-voltage parallel mode: reducing the current stress on the switching devices on the HV DC output side; high-voltage series mode: reducing the voltage stress on the switching devices on the HV DC output side.

[0130] To realize the various functions of the series-parallel combined output module, a four-bridge arm structure is adopted, such as... Figure 21 As shown, the circuit structure includes four bridge arms, which can be implemented by the intelligent power module designed in this utility model. By configuring different relay working states, multiple working modes can be switched.

[0131] Please see Figure 22 In this application circuit, the topology of the intelligent power module proposed by this utility model also includes a first connection terminal and a second connection terminal. The topology of the intelligent power module has a low-voltage parallel mode and a high-voltage series mode. In the low-voltage parallel mode, the first connection terminal is connected to the negative terminal of the DC output and the second connection terminal is connected to the positive terminal of the DC output. In the high-voltage series mode, the first connection terminal and the second connection terminal are connected together.

[0132] Pins HO1 and HO2 are connected to the positive terminal of the DC output, pins SS1 and SS2 are connected to the first connection terminal, pins HO3 and HO4 are connected to the second connection terminal, pins SS3 and SS4 are connected to the negative terminal of the DC output, pin LO1 is connected to the same-name terminal of the secondary winding of the high-side transformer, pin LO2 is connected to the opposite-name terminal of the secondary winding of the high-side transformer, pin LO3 is connected to the same-name terminal of the secondary winding of the low-side transformer, and pin LO4 is connected to the opposite-name terminal of the secondary winding of the low-side transformer.

[0133] The first connection terminal here corresponds to the attached Figure 21 Appendix Figure 22 and appendix Figure 23 The upper terminal connected to states 1 and 2, and the second connection terminal corresponding to it. Figure 21 Appendix Figure 22 and appendix Figure 23 The terminal below the one connected to states 1 and 2, when the above circuit needs to be operated in low-voltage parallel mode, the first and second connection terminals are connected to state 1 respectively. At this time, pin HO1 is connected to the positive terminal HV+ of the DC output, pin LO1 is connected to the same terminal of the secondary winding of the high-side transformer, and pin SS1 is connected to the negative terminal HV- of the DC output.

[0134] Pin HO2 is connected to the positive terminal HV+ of the DC output, pin LO2 is connected to the opposite terminal of the secondary winding of the high-side transformer, and pin SS2 is connected to the negative terminal HV- of the DC output.

[0135] Pin HO3 is connected to the positive terminal HV+ of the DC output, pin LO3 is connected to the same-name terminal of the secondary winding of the low-side transformer, and pin SS3 is connected to the negative terminal HV- of the DC output.

[0136] Pin HO4 is connected to the positive terminal HV+ of the DC output, pin LO4 is connected to the opposite terminal of the secondary winding of the low-side transformer, and pin SS4 is connected to the negative terminal HV- of the DC output.

[0137] When the above circuit needs to be operated in high voltage series mode, the first connection terminal and the second connection terminal are connected to state 2 respectively. At this time, pin HO1 is connected to the positive terminal HV+ of DC output, and pin LO1 is connected to the same terminal of the secondary winding of the high-side transformer.

[0138] Pin HO2 is connected to the positive terminal HV+ of the DC output, and pin LO2 is connected to the opposite terminal of the secondary winding of the high-side transformer;

[0139] Pin LO3 is connected to the same-name terminal of the secondary winding of the low-side transformer, and pin SS3 is connected to the negative terminal HV- of the DC output.

[0140] Pin LO4 is connected to the opposite terminal of the secondary winding of the low-side transformer, and pin SS4 is connected to the negative terminal HV- of the DC output.

[0141] Pins SS1 and SS2 are connected to pins HO3 and HO4.

[0142] Please see Figure 23 It is an intelligent power module with integrated driver IC applied to Figure 21 The connection method of the circuit, its specific connection method and Figure 22 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here.

[0143] Furthermore, this invention can also be adapted to a series-parallel combined input module. The converter has the following functions: low-voltage parallel mode: reducing the current stress on the switching devices on the HV DC input side; high-voltage series mode: reducing the voltage stress on the switching devices on the HV DC input side.

[0144] To realize the various functions of the series-parallel combined input module, a four-bridge arm structure is adopted, such as... Figure 24 As shown, the circuit structure includes four bridge arms, which are implemented by the integrated module designed in this utility model. By configuring different relay working states, multiple working modes can be switched.

[0145] Please see Figure 25 In this application circuit, pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus, pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus, pin LO1 is connected to the same-name terminal of the primary winding of the high-side transformer, pin LO2 is connected to the opposite-name terminal of the primary winding of the high-side transformer, pin LO3 is connected to the same-name terminal of the primary winding of the low-side transformer, and pin LO4 is connected to the opposite-name terminal of the primary winding of the low-side transformer.

[0146] Please see Figure 26 It is an intelligent power module with integrated driver IC applied to Figure 24 The connection method of the circuit, its specific connection method and Figure 25 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here.

[0147] Furthermore, this invention can also be adapted to single-phase, single-stage OBCs; please refer to [link / reference]. Figure 27 It includes a total of 4 sets of back-to-back bridge arms, with different bridge arms sharing a high-voltage DC bus. Please refer to [link / reference]. Figure 28 In this application circuit, the topology of the intelligent power module proposed in this utility model also includes four sets of inductors, including a first set of inductors connected in series between the positive terminal of the AC input and the same-name terminal of the primary winding of the high-side transformer, a second set of inductors connected in series between the positive terminal of the AC input and the opposite-name terminal of the primary winding of the high-side transformer, a third set of inductors connected in series between the negative terminal of the AC input and the same-name terminal of the primary winding of the low-side transformer, and a fourth set of inductors connected in series between the negative terminal of the AC input and the opposite-name terminal of the primary winding of the low-side transformer.

[0148] Pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus; pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus; pin LO1 is connected between the first group of inductors; pin LO2 is connected between the second group of inductors; pin LO3 is connected between the third group of inductors; and pin LO4 is connected between the fourth group of inductors.

[0149] Please see Figure 29 It is an intelligent power module with integrated driver IC applied to Figure 27 The connection method of the circuit, its specific connection method and Figure 28 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here.

[0150] In addition to other topologies, such as Figure 30 As shown, it can be adapted for application through the intelligent power module of this utility model. Please refer to [link / reference]. Figure 31 In this application circuit, pins HO1 and HO2 are connected to the positive terminal of the DC input, pins SS1 and SS2 are connected to the negative terminal of the DC input, pin LO1 is connected to the same-name terminal of the primary winding of the transformer, pin LO2 is connected to the opposite-name terminal of the primary winding of the transformer, pin HO3 is connected to the positive terminal of the DC output, pin LO3 is connected to the same-name terminal of the secondary winding of the transformer after being connected in series with an impedance element, pins SS3 and HO4 are connected to the midpoint of the bus capacitor connected in series between the positive and negative terminals of the DC output, pin LO4 is connected to the opposite-name terminal of the secondary winding of the transformer, and pin SS4 is connected to the negative terminal of the DC output.

[0151] Please see Figure 32 It is an intelligent power module with integrated driver IC applied to Figure 30 The connection method of the circuit, its specific connection method and Figure 31 They are the same, except that the intelligent power module integrates a driver IC, which will not be elaborated here.

[0152] As can be seen from the above settings, the topology of the intelligent power module proposed in this utility model, due to its multiple external pins, can adapt to different circuit structures and meet the different user circuit design needs by adjusting the connection method of the external pins.

[0153] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A topology for using intelligent power modules, characterized in that, The intelligent power module has multiple sets of power devices arranged on the DBC substrate, and the multiple sets of power devices constitute four bridge arm structures. The intelligent power module also has multiple external pins corresponding to the connection terminals of each of the four bridge arm structures. The intelligent power module can form different topologies by adjusting the connection method of the external pins.

2. The topology of the intelligent power module according to claim 1, characterized in that, The intelligent power module has pins HO1, LO1, and SS1 corresponding to the first group of bridge arms in the four bridge arm structure, pins HO2, LO2, and SS2 corresponding to the second group of bridge arms in the four bridge arm structure, pins HO3, LO3, and SS3 corresponding to the third group of bridge arms in the four bridge arm structure, and pins HO4, LO4, and SS4 corresponding to the fourth group of bridge arms in the four bridge arm structure. Pin HO1 is connected to the upper end of the first group of bridge arms, pin LO1 is connected to the midpoint of the first group of bridge arms, and pin SS1 is connected to the lower end of the first group of bridge arms. Pin HO2 is connected to the upper end of the bridge arm of the second group of bridge arms, pin LO2 is connected to the midpoint of the bridge arm of the second group of bridge arms, and pin SS2 is connected to the lower end of the bridge arm of the second group of bridge arms. Pin HO3 is connected to the upper end of the bridge arm of the third group of bridge arms, pin LO3 is connected to the midpoint of the bridge arm of the third group of bridge arms, and pin SS3 is connected to the lower end of the bridge arm of the third group of bridge arms. Pin HO4 is connected to the upper end of the fourth bridge arm, pin LO4 is connected to the midpoint of the fourth bridge arm, and pin SS4 is connected to the lower end of the fourth bridge arm.

3. The topology of the intelligent power module according to claim 2, characterized in that, Pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus; pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus; pin LO1 is connected to the positive terminal of the AC input; pin LO2 is connected to the negative terminal of the AC input; pin LO3 is connected to the same-name terminal of the primary winding of the transformer; and pin LO4 is connected to the opposite-name terminal of the primary winding of the transformer.

4. The topology of the intelligent power module according to claim 2, characterized in that, Pins HO1 and HO2 are connected to the positive terminal of the DC bus, pins SS1 and SS2 are connected to the negative terminal of the DC bus, pins HO3 and HO4 are connected to the positive terminal of the high-voltage battery, pins SS3 and SS4 are connected to the negative terminal of the high-voltage battery, pin LO1 is connected to the same-name terminal of the primary winding of the transformer after a series impedance element, pin LO2 is connected to the opposite-name terminal of the primary winding of the transformer, pin LO3 is connected to the same-name terminal of the secondary winding of the transformer, and pin LO4 is connected to the opposite-name terminal of the secondary winding of the transformer.

5. The topology of the intelligent power module according to claim 2, characterized in that, It includes a high-voltage side charging circuit and a low-voltage side charging circuit, wherein the high-voltage side charging circuit and the low-voltage side charging circuit share the high-voltage battery charging; Pins HO1 and HO2 are connected to the positive terminal of the high-voltage battery, pins SS1 and SS2 are connected to the negative terminal of the high-voltage battery, pin LO1 is connected to the same-name terminal of the secondary winding of the high-voltage transformer, and pin LO2 is connected to the opposite-name terminal of the secondary winding of the high-voltage transformer. Pins HO3 and HO4 are connected to the positive terminal of the high-voltage battery, pins SS3 and SS4 are connected to the negative terminal of the high-voltage battery, pin LO3 is connected to the same-name terminal of the primary winding of the low-voltage transformer, and pin LO4 is connected to the opposite-name terminal of the primary winding of the low-voltage transformer.

6. The topology of the intelligent power module according to claim 2, characterized in that, Pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus; pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus; pin LO1 is connected to the A-phase AC input; pin LO2 is connected to the B-phase AC input; pin LO3 is connected to the C-phase AC input; and pin LO4 is connected to the N-line interface terminal. It also includes a relay with one end connected to the midpoint of the bus capacitor, and the other end of the relay connected between the pin LO4 and the N-line interface terminal; When the relay is open, the topology of the application intelligent power module operates in single-phase mode; when the relay is closed, the topology of the application intelligent power module operates in three-phase mode.

7. The topology of the intelligent power module according to claim 2, characterized in that, It also includes a first connection terminal and a second connection terminal. The topology of the application intelligent power module has a low-voltage parallel mode and a high-voltage series mode. In the low-voltage parallel mode, the first connection terminal is connected to the negative terminal of the DC output and the second connection terminal is connected to the positive terminal of the DC output. In the high-voltage series mode, the first connection terminal and the second connection terminal are connected together. Pins HO1 and HO2 are connected to the positive terminal of the DC output, pins SS1 and SS2 are connected to the first connection terminal, pins HO3 and HO4 are connected to the second connection terminal, pins SS3 and SS4 are connected to the negative terminal of the DC output, pin LO1 is connected to the same-name terminal of the secondary winding of the high-side transformer, pin LO2 is connected to the opposite-name terminal of the secondary winding of the high-side transformer, pin LO3 is connected to the same-name terminal of the secondary winding of the low-side transformer, and pin LO4 is connected to the opposite-name terminal of the secondary winding of the low-side transformer.

8. The topology of the intelligent power module according to claim 2, characterized in that, Pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus. Pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus. Pin LO1 is connected to the same-name terminal of the primary winding of the high-side transformer. Pin LO2 is connected to the opposite-name terminal of the primary winding of the high-side transformer. Pin LO3 is connected to the same-name terminal of the primary winding of the low-side transformer. Pin LO4 is connected to the opposite-name terminal of the primary winding of the low-side transformer.

9. The topology of the intelligent power module according to claim 2, characterized in that, It also includes four sets of inductors, including a first set of inductors connected in series between the positive terminal of the AC input and the same-name terminal of the primary winding of the high-side transformer, a second set of inductors connected in series between the positive terminal of the AC input and the opposite-name terminal of the primary winding of the high-side transformer, a third set of inductors connected in series between the negative terminal of the AC input and the same-name terminal of the primary winding of the low-side transformer, and a fourth set of inductors connected in series between the negative terminal of the AC input and the opposite-name terminal of the primary winding of the low-side transformer. Pins HO1, HO2, HO3, and HO4 are connected to the positive terminal of the DC bus. Pins SS1, SS2, SS3, and SS4 are connected to the negative terminal of the DC bus. Pin LO1 is connected between the first group of inductors. Pin LO2 is connected between the second group of inductors. Pin LO3 is connected between the third group of inductors. Pin LO4 is connected between the fourth group of inductors.

10. The topology of the intelligent power module according to claim 2, characterized in that, Pins HO1 and HO2 are connected to the positive terminal of the DC input, pins SS1 and SS2 are connected to the negative terminal of the DC input, pin LO1 is connected to the same-name terminal of the primary winding of the transformer, pin LO2 is connected to the opposite-name terminal of the primary winding of the transformer, pin HO3 is connected to the positive terminal of the DC output, pin LO3 is connected to the same-name terminal of the secondary winding of the transformer after being connected in series with an impedance element, pins SS3 and HO4 are connected to the midpoint of the bus capacitor connected in series between the positive and negative terminals of the DC output, pin LO4 is connected to the opposite-name terminal of the secondary winding of the transformer, and pin SS4 is connected to the negative terminal of the DC output.

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