Ion source and ion implanter

Abstract

The utility model provides a kind of ion source and ion implanter, the ion source includes arc starting chamber, cathode unit, reflection unit and gas inlet unit;Cathode unit is set to one side of arc starting chamber, reflection unit is set to the other side of arc starting chamber, and at least a part of cathode unit and at least a part of reflection unit are located in the cavity of arc starting chamber;Gas inlet unit includes gas inlet pipeline and rotating flow straightener, tangential gas inlet is equipped on rotating flow straightener, gas inlet pipeline is communicated with tangential gas inlet, the gas outlet of rotating flow straightener is communicated with the gas inlet of arc starting chamber.The utility model can effectively reduce the solid residue caused by the contact time of gas and the inner wall of the cavity of arc starting chamber and the process components in the cavity of arc starting chamber is too long while increasing dissociation efficiency, so as to not only can effectively reduce the frequency of maintenance or replacement of ion source, effectively reduce production cost, and can improve the WPH value of machine.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to an ion source and an ion implantation machine. Background Technology

[0002] In semiconductor manufacturing technology, ion implantation, through localized and quantitative doping, has become an effective method to change the electrical properties of wafers by altering the carrier concentration and type.

[0003] Traditional ion sources for ion implantation machines include a filament, cathode, arc chamber, process gas introduction unit, and reflective electrode.

[0004] The ion source dissociation process can be summarized as follows: heating the filament generates electrons, electrons collide with the cathode to generate a large number of electrons that enter the arc-starting chamber, process gas is introduced into the arc-starting chamber, and the magnetic field in the vertical direction of the arc-starting chamber causes electrons to move in a spiral motion in the arc-starting chamber. The reflective electrode reflects electrons and gas molecules to continuously collide and generate more secondary electrons and ions. When enough ions are generated and the entire arc-starting chamber is filled, the ions are drawn out into the Beam Line region.

[0005] Currently, the commonly used process gases (solids) for ion implantation machines include BF3 (boron trifluoride), PH3 (phosphine), AsH3 (arsine), SbF3 (antimony trifluoride), and InF3 (indium trifluoride). When gas molecules (solid materials sublimate into gas through heating) enter the arc-starting chamber, they are not completely dissociated. Byproducts of the solid materials (SbF3, InF3) and the gaseous (solid) materials easily remain in the arc-starting chamber. Over time, this leads to solid deposition in the arc-starting chamber and on the process components (cathode and reflector electrodes), affecting the uniformity of the ion beam, shortening the lifespan of the ion implantation machine, and necessitating periodic replacement of the ion source. Replacing the ion source not only increases production costs but also requires machine downtime, thus affecting the machine's WPH (wafer throughput per hour) value.

[0006] It should be noted that the information disclosed in the background section of this utility model is intended only to enhance the understanding of the general background of this utility model, and should not be regarded as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Utility Model Content

[0007] The purpose of this invention is to provide an ion source and an ion implantation machine that can effectively reduce solid residue caused by prolonged contact time between gas and the inner wall of the arc-starting chamber and the process components inside the arc-starting chamber, while increasing dissociation efficiency. This not only effectively reduces the frequency of maintenance or replacement of the ion source and lowers production costs, but also increases the machine's WPH (wafer output per hour) value.

[0008] To achieve the above objectives, this utility model provides an ion source, which includes an arc-starting chamber, a cathode unit, a reflection unit, and a gas inlet unit. The cathode unit is disposed on one side of the arc-starting chamber, and the reflection unit is disposed on the other side of the arc-starting chamber. At least a portion of the cathode unit and at least a portion of the reflection unit are located within the cavity of the arc-starting chamber. The gas inlet unit includes an inlet pipe and a rotating guide. The rotating guide has a tangential inlet, the inlet pipe is connected to the tangential inlet, and the outlet of the rotating guide is connected to the inlet of the arc-starting chamber.

[0009] Optionally, the ion source provided by this utility model further includes a temperature control unit, which is disposed on the outer periphery of the rotating guide.

[0010] Optionally, the temperature control unit includes a housing and a plurality of heating elements disposed on the inner wall of the housing, the rotating guide is disposed inside the housing, and the end of the rotating guide with its air outlet extends to the outside of the housing.

[0011] Optionally, the ion source provided by this utility model further includes a vibration unit, which is disposed on the outer wall of the arc-starting chamber.

[0012] Optionally, the vibration unit includes a plurality of ultrasonic vibrators, wherein at least one of the ultrasonic vibrators is disposed near the cathode unit and at least one of the ultrasonic vibrators is disposed near the reflection unit.

[0013] Optionally, the inner diameter of the rotating guide gradually decreases along the direction from the end where the tangential air inlet of the rotating guide is located to the end where the air outlet of the rotating guide is located.

[0014] Optionally, the corners of the arc-starting chamber are all rounded.

[0015] Optionally, the cathode unit includes a filament and a cathode cap, the cathode cap being electrically insulated from the side wall of the arc-starting chamber, the filament being located inside the cathode cap, and a gap being formed between the filament and the inner wall of the cathode cap.

[0016] Optionally, the ion source provided by this utility model further includes an extraction unit, which is disposed near the ion outlet of the arc-starting chamber. The extraction unit includes a suppression electrode and a ground electrode, with the suppression electrode disposed closer to the ion outlet than the ground electrode.

[0017] To achieve the above objectives, this utility model also provides an ion implantation machine, which includes the ion source described in any of the above descriptions.

[0018] Compared with the prior art, the ion source and ion implantation machine provided by this utility model have the following unexpected beneficial effects: The ion source provided by this utility model includes an arc-starting chamber, a cathode unit, a reflection unit, and a gas inlet unit; the cathode unit is disposed on one side of the arc-starting chamber, the reflection unit is disposed on the other side of the arc-starting chamber, and at least a portion of the cathode unit and at least a portion of the reflection unit are located within the cavity of the arc-starting chamber; the gas inlet unit includes an inlet pipe and a rotating guide, the rotating guide is provided with a tangential inlet, the inlet pipe is connected to the tangential inlet, and the outlet of the rotating guide is connected to the inlet of the arc-starting chamber. Therefore, the ion source provided by this utility model, by setting a rotating guide with a tangential air inlet, allows the process gas transported through the air inlet pipe to enter the rotating guide through the tangential air inlet. Under the action of the rotating guide, a rotating airflow is formed and enters the cavity of the arc-starting chamber for dissociation. Compared with the laminar flow of process gas in the cavity of a traditional arc-starting chamber, the rotating airflow makes the path of gas molecules in the cavity of the arc-starting chamber more complex and variable. This can effectively reduce the contact time between gas molecules and the inner wall of the arc-starting chamber and the process components (cathode unit and reflector unit) located in the cavity of the arc-starting chamber. This can effectively reduce the solid residue in the cavity of the arc-starting chamber and improve the uniformity of the ion beam. This can not only effectively reduce the frequency of maintenance or replacement of the ion source and extend the service life of the ion implantation machine, effectively reduce production costs, but also increase the WPH (wafer output per hour) value of the machine. In addition, the rotating airflow helps the process gas to be evenly distributed within the arc-starting chamber, allowing more gas molecules to participate in the dissociation reaction and thus effectively increasing the dissociation efficiency.

[0019] Furthermore, the ion source provided by this utility model can heat the process gas before it enters the arc-starting chamber by setting a temperature control unit on the outer periphery of the rotating guide. This can prevent the process gas entering the arc-starting chamber from condensing into a solid due to the temperature drop, thereby further reducing the solid residue in the arc-starting chamber.

[0020] Furthermore, the ion source provided by this utility model has a vibration unit installed on the outer wall of the arc-starting chamber. When the machine is being maintained, the vibration unit can be activated, and the vibration force generated by the vibration unit can effectively remove solid residues located in the cavity of the arc-starting chamber, thereby further reducing the frequency of maintenance or replacement of the ion source.

[0021] Furthermore, the ion source provided by this utility model sets all the corners of the arc-starting chamber to be arc-shaped, which makes the arc-starting chamber a structure without dead corners. This can effectively avoid solid residues in the dead corners of the arc-starting chamber, thereby further reducing the amount of solid residues in the arc-starting chamber and effectively reducing the frequency of maintenance or replacement of the ion source.

[0022] Since the ion implantation machine provided by this utility model includes the ion source provided by this utility model, the ion implantation machine provided by this utility model has at least all the beneficial effects of the ion source provided by this utility model. Therefore, the beneficial effects of the ion implantation machine provided by this utility model can be referred to the relevant descriptions of the beneficial effects of the ion source provided by this utility model above, and will not be repeated here. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of the overall structure of an ion source provided in one embodiment of the present invention; Figure 2 A cross-sectional view of a rotating guide provided in one embodiment of this utility model.

[0024] The reference numerals in the attached figures are explained as follows: Arc initiation chamber - 100; cavity - 110; corner - 111; air inlet - 120; ion outlet - 130; Cathode unit - 200; Filament - 210; Cathode cap - 220; Reflective unit-300; Reflective electrode-310; Gas inlet unit-400; Inlet pipe-410; Rotary guide-420; Tangential inlet-421; Temperature control unit - 500; Housing - 510; Heating element - 520; Vibration unit-600; Ultrasonic vibrator-610; Lead-out unit-700; Suppression electrode-710; Grounding electrode-720; Ion beam-800. Detailed Implementation

[0025] The ion source and ion implantation device proposed in this utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments. To make the objectives, features, and advantages of this utility model more apparent and understandable, the structures, proportions, sizes, etc., illustrated in the accompanying drawings are only for illustrative purposes and to enable those skilled in the art to understand and read them, and are not intended to limit the implementation conditions of this utility model. Any modifications to the structure, changes in proportions, or adjustments to the size, provided they produce the same or similar effects and achieve the same objectives as this utility model, should still fall within the scope of the technical content disclosed in this utility model. Specific design features of this utility model disclosed herein, including, for example, specific dimensions, orientations, positions, and shapes, will be determined in part by the specific application and usage environment. Furthermore, in the embodiments described below, the same reference numerals are sometimes used across different drawings to denote the same parts or parts having the same function, omitting repeated descriptions. In this specification, similar reference numerals and letters are used to denote similar items; therefore, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0026] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor should they be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The singular forms “a,” “one,” and “the” include plural objects. The term “or” is generally used to mean “and / or.” The term “several” is generally used to mean “at least one.” The term “at least two” is generally used to mean “two or more.” The term “multiple” is generally used to mean “at least two.”

[0027] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances. Furthermore, in this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Moreover, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0028] The core idea of ​​this utility model is to provide an ion source and an ion implantation machine that can effectively reduce solid residue caused by prolonged contact time between gas and the inner wall of the arc-starting chamber and the process components inside the arc-starting chamber while increasing dissociation efficiency. This not only effectively reduces the frequency of maintenance or replacement of the ion source and lowers production costs, but also increases the machine's WPH (wafer output per hour) value.

[0029] To achieve the above-mentioned goals, this invention provides an ion source, please refer to the following: Figure 1 and Figure 2 ,in, Figure 1 This is a schematic diagram of the overall structure of an ion source provided in one embodiment of the present invention; Figure 2 This is a cross-sectional view of a rotating guide provided according to one embodiment of the present invention. Figure 1 and Figure 2As shown, the ion source provided by this utility model includes an arc-starting chamber 100, a cathode unit 200, a reflection unit 300, and a gas inlet unit 400. The cathode unit 200 is disposed on one side of the arc-starting chamber 100, and the reflection unit 300 is disposed on the other side of the arc-starting chamber 100. At least a portion of the cathode unit 200 and at least a portion of the reflection unit 300 are located within the cavity 110 of the arc-starting chamber 100. The gas inlet unit 400 includes an inlet pipe 410 and a rotating guide 420. The rotating guide 420 is provided with a tangential inlet 421. The inlet pipe 410 is connected to the tangential inlet 421. The outlet of the rotating guide 420 (not shown in the figure) is connected to the inlet 120 of the arc-starting chamber 100.

[0030] Therefore, the ion source provided by this utility model, by setting a rotating guide 420 with a tangential air inlet 421, allows the process gas transported through the air inlet pipe 410 to enter the rotating guide 420 through the tangential air inlet 421. Under the action of the rotating guide 420, a rotating airflow is formed and enters the cavity 110 of the arc-starting chamber 100 for dissociation. Compared with the laminar flow of process gas in the cavity 110 of a traditional arc-starting chamber 100, the rotating airflow makes the path of gas molecules within the cavity 110 of the arc-starting chamber 100 more complex and variable. This effectively reduces the contact time between gas molecules and the inner wall of the arc-starting chamber 100 cavity 110, as well as the process components (such as the cathode unit 200 and the reflector unit 300) located within the arc-starting chamber 100 cavity 110. Consequently, it effectively reduces solid residue within the arc-starting chamber 100 cavity 110, improves the uniformity of the ion beam 800 flow, and thus not only effectively reduces the frequency of ion source maintenance or replacement, extending the service life of the ion implantation machine and effectively reducing production costs, but also increases the machine's WPH (wafer throughput per hour) value. Furthermore, the rotating airflow also helps to uniformly distribute the process gas within the arc-starting chamber 100 cavity 110, allowing more gas molecules to participate in the dissociation reaction, thereby effectively increasing the dissociation efficiency.

[0031] It should be noted that, as those skilled in the art will understand, both the cathode unit 200 and the reflector unit 300 are electrically insulated from the arc-starting chamber 100. Specifically, for details on how to achieve the electrical insulation connection between the cathode unit 200, the reflector unit 300 and the arc-starting chamber 100, please refer to relevant content known to those skilled in the art, which will not be elaborated here.

[0032] The specific working principle of the ion source provided by this utility model is as follows: A large number of electrons can be generated through the cathode unit 200 and enter the cavity 110 of the arc-starting chamber 100. After the process gas is introduced into the rotating guide 420, a rotating airflow is formed and enters the cavity 110 of the arc-starting chamber 100. The magnetic field in the vertical direction of the arc-starting chamber 100 causes the electrons to move spirally in the cavity 110 of the arc-starting chamber 100 and continuously collide with the gas molecules in the rotating airflow, thereby generating ions. The reflection unit 300 can reflect electrons and gas molecules, so that electrons and gas molecules can continuously collide, thereby generating more secondary electrons and ions.

[0033] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the inner diameter of the rotary guide 420 gradually decreases along the direction from the end of the rotary guide 420 with its tangential inlet 421 to the end of the rotary guide 420 with its outlet. Therefore, by configuring the rotary guide 420 as a conical structure with its inner diameter gradually decreasing along the direction from the end of the rotary guide 420 with its tangential inlet 421 to the end of the rotary guide 420 with its outlet, the process gas velocity increases as it passes through the rotary guide 420 due to the reduced flow channel cross-sectional area, thus facilitating the formation of a rotating airflow.

[0034] It should be noted that, as those skilled in the art will understand, this utility model does not limit the specific type of the rotating guide 420. For more information on the specific structure and working principle of the rotating guide 420, please refer to the relevant content known to those skilled in the art, which will not be elaborated here.

[0035] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the ion source provided by this invention further includes a temperature control unit 500, which is disposed on the outer periphery of the rotating guide 420. Therefore, by providing the temperature control unit 500 on the outer periphery of the rotating guide 420, the process gas can be heated before entering the cavity 110 of the arc-starting chamber 100, thereby preventing the process gas entering the cavity 110 of the arc-starting chamber 100 from condensing into a solid due to temperature reduction, further reducing solid residue in the cavity 110 of the arc-starting chamber 100.

[0036] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the temperature control unit 500 includes a housing 510 and a plurality of heating elements 520 disposed on the inner wall of the housing 510. The rotating guide 420 is disposed inside the housing 510, and the outlet end of the rotating guide 420 extends to the outside of the housing 510. Therefore, by configuring the temperature control unit 500 with a structure including a housing 510 and a plurality of heating elements 520 disposed on the inner wall of the housing 510, heat loss can be effectively prevented, allowing for better heating of the process gas before it enters the cavity 110 of the arc-starting chamber 100. This effectively prevents the process gas from condensing into a solid due to temperature reduction, thereby further preventing solid residues within the cavity 110 of the arc-starting chamber 100.

[0037] It should be noted that, as those skilled in the art will understand, the side wall of the housing 510 is provided with a through hole (not shown in the figure) through which the air intake pipe 410 passes, and the air intake pipe 410 is sealed to the through hole. This further prevents heat loss, allowing the temperature control unit 500 to better heat the process gas and effectively prevent the process gas from condensing into a solid due to temperature reduction.

[0038] Specifically, the heating element 520 can be a resistance heating element or a microwave heating element. The specific structure and working principle of the resistance heating element or microwave heating element can be found in relevant materials known to those skilled in the art, and will not be elaborated upon here. Furthermore, to improve the heating effect, the heating element 520 can be positioned close to the air outlet of the rotating guide 420.

[0039] It should be noted that, as those skilled in the art will understand, in some other embodiments, the temperature control element may also include a housing 510 and a resistance wire wound around the outer wall of the rotating guide 420.

[0040] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the ion source provided by this invention further includes a vibration unit 600, which is disposed on the outer wall of the arc-starting chamber 100. Therefore, by disposing of the vibration unit 600 on the outer wall of the arc-starting chamber 100, the vibration unit 600 can be activated during machine maintenance, and the vibration force generated by the vibration unit 600 can effectively remove solid residues located within the cavity 110 of the arc-starting chamber 100.

[0041] Specifically, each ultrasonic vibrator 610 can be activated during machine operation, and an inert gas (such as argon) can be introduced into the cavity 110 of the arc-starting chamber 100. Under the action of the vibration force generated by the vibration unit 600, the solids remaining in the arc-starting chamber 100 can be peeled off from the inner wall of the cavity 110 of the arc-starting chamber 100 and carried out of the arc-starting chamber 100 by the rotating airflow generated by the rotating guide 420. This can effectively clean the solid deposits in the cavity 110 of the arc-starting chamber 100 without replacing the ion source, thereby effectively reducing the frequency of ion source maintenance or replacement, effectively reducing production costs, and increasing the WPH (wafer output per hour) value of the machine.

[0042] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the vibration unit 600 includes a plurality of ultrasonic vibrators 610, wherein at least one ultrasonic vibrator 610 is disposed near the cathode unit 200, and at least one ultrasonic vibrator 610 is disposed near the reflector unit 300. Thus, by configuring the vibration unit 600 with a structure including a plurality of ultrasonic vibrators 610, it is not only possible to effectively ensure that solid residues located in the cavity 110 of the arc-starting chamber 100 are effectively removed when the ultrasonic vibrators 610 are activated, but also to facilitate the arrangement of the vibration unit 600. Furthermore, by placing at least one ultrasonic vibrator 610 near the cathode unit 200, solid residues at the cathode unit 200 can be effectively removed by the action of the ultrasonic vibrator 610; similarly, by placing at least one ultrasonic vibrator 610 near the reflector unit 300, solid residues at the reflector unit 300 can be effectively removed by the action of the ultrasonic vibrator 610. It should be noted that the specific structure and working principle of the ultrasonic vibrator 610 can be found in relevant materials known to those skilled in the art, and will not be elaborated here.

[0043] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, an ultrasonic vibrator 610 is provided above and below the cathode unit 200, and an ultrasonic vibrator 610 is provided above and below the reflector unit 300. Therefore, by providing an ultrasonic vibrator 610 above and below the cathode unit 200, not only can solid residues remaining on the cathode unit 200 be effectively removed by the ultrasonic vibrator 610, but also solid residues located at the inner corner 111 of the arc-starting chamber 100 on the side of the cathode unit 200 can be effectively removed by the ultrasonic vibrator 610; similarly, by providing an ultrasonic vibrator 610 above and below the reflector unit 300, not only can solid residues remaining on the reflector unit 300 be effectively removed by the ultrasonic vibrator 610, but also solid residues located at the inner corner 111 of the arc-starting chamber 100 on the side of the reflector unit 300 can be effectively removed by the ultrasonic vibrator 610.

[0044] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the corners 111 of the cavity 110 of the arc-initiating chamber 100 are all rounded. Therefore, by making the corners 111 of the cavity 110 of the arc-initiating chamber 100 rounded, the cavity 110 of the arc-initiating chamber 100 can be designed as a structure without dead angles, thereby effectively avoiding solid residue in the dead angles of the cavity 110 of the arc-initiating chamber 100, further reducing solid residue in the cavity 110 of the arc-initiating chamber 100, and effectively reducing the frequency of maintenance or replacement of the ion source.

[0045] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the cathode unit 200 includes a filament 210 and a cathode cap 220, the cathode cap 220 being electrically insulated from the sidewall of the arc-starting chamber 100. The filament 210 is located within the cathode cap 220, and a gap exists between the filament 210 and the inner wall of the cathode cap 220. Thus, when the filament 210 is energized to begin heating, it generates electrons. These electrons strike the cathode cap 220, generating secondary electrons. These secondary electrons can be accelerated by the arc voltage applied between the cathode cap 220 and the arc-starting chamber 100, releasing them as beam electrons with sufficient energy for the dissociation of gas molecules into the cavity 110 of the arc-starting chamber 100.

[0046] It should be noted that, as those skilled in the art will understand, both ends of the filament 210 are connected to a first power source (not shown in the figure). Furthermore, it should be noted that this utility model does not limit the specific structure of the filament 210; the filament 210 can be used for various purposes besides... Figure 1 Besides the structure shown, which is formed by bending a single filament 210 into a spiral shape in the middle and extending straight out at both ends, other structures can also be formed entirely by a single filament 210. The specific structure can be selected according to actual needs, and will not be listed here.

[0047] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the reflective unit 300 includes a reflective electrode 310, which is electrically insulated from the sidewall of the arc-starting chamber 100. Thus, the reflective electrode 310 can reflect electrons within the cavity 110 of the arc-starting chamber 100, allowing electrons to remain within the cavity 110 and thereby contributing to improved ion generation efficiency.

[0048] It should be noted that, as those skilled in the art will understand, a second power source (not shown in the figure) is connected between the reflective electrode 310 and the arc-starting chamber 100. The second power source is an adjustable power source that is independent of the first power source and can independently adjust its own potential relative to the first power source.

[0049] Please continue to refer to this. Figure 1 ,like Figure 1 As shown, in some exemplary embodiments, the reflective electrode 310 and the cathode cap 220 are arranged opposite to each other. Therefore, by arranging the reflective electrode 310 opposite to the cathode cap 220, it is easier for the reflective electrode 310 to reflect electrons within the cavity 110 of the arc-starting chamber 100, ensuring that electrons can remain within the cavity 110 of the arc-starting chamber 100, thereby helping to improve ion generation efficiency.

[0050] Please continue to refer to this. Figure 1 ,like Figure 1As shown, in some exemplary embodiments, the ion source provided by this invention further includes an extraction unit 700, which is disposed near the ion outlet 130 of the arc-starting chamber 100. The extraction unit 700 includes a suppression electrode 710 and a ground electrode 720, with the suppression electrode 710 disposed closer to the ion outlet 130 than the ground electrode 720. Therefore, by disposing the suppression electrode 710 and the ground electrode 720 near the ion outlet 130 of the arc-starting chamber 100, and by placing the suppression electrode 710 closer to the ion outlet 130, the ion beam 800 can be effectively extracted smoothly from the cavity 110 of the arc-starting chamber 100.

[0051] To achieve the above-mentioned ideas, this utility model also provides an ion implantation machine, which includes the ion source described above. Since the ion implantation machine provided by this utility model includes the ion source provided by this utility model, it possesses at least all the beneficial effects of the ion source provided by this utility model. Therefore, the beneficial effects of the ion implantation machine provided by this utility model can be referred to the relevant descriptions of the beneficial effects of the ion source provided by this utility model above, and will not be repeated here.

[0052] It should be noted that, as those skilled in the art can understand, more details about the structure and working principle of the ion implantation machine provided by this utility model can be adapted by referring to relevant content known to those skilled in the art, and will not be elaborated further here.

[0053] In summary, compared with the prior art, the ion source and ion implantation machine provided by this utility model have the following unexpected beneficial effects: (1) This utility model, by setting a rotating guide 420 with a tangential air inlet 421, allows the process gas transported through the air inlet pipe 410 to enter the rotating guide 420 through the tangential air inlet 421. Under the action of the rotating guide 420, a rotating airflow is formed and enters the cavity 110 of the arc-starting chamber 100 for dissociation. Compared with the laminar flow of process gas in the cavity 110 of a traditional arc-starting chamber 100, the rotating airflow makes the path of gas molecules within the cavity 110 of the arc-starting chamber 100 more complex and variable. This effectively reduces the contact time between gas molecules and the inner wall of the arc-starting chamber 100 cavity 110, as well as the process components (cathode unit 200 and reflector unit 300) located within the arc-starting chamber 100 cavity 110. This, in turn, effectively reduces solid residue within the arc-starting chamber 100 cavity 110, improves the uniformity of the ion beam 800 flow, and thus not only effectively reduces the frequency of ion source maintenance or replacement, extending the service life of the ion implantation machine and effectively reducing production costs, but also increases the machine's WPH (wafer throughput per hour) value. Furthermore, the rotating airflow helps to uniformly distribute the process gas within the arc-starting chamber 100 cavity 110, allowing more gas molecules to participate in the dissociation reaction, thereby effectively increasing the dissociation efficiency.

[0054] (2) By setting a temperature control unit 500 on the outer periphery of the rotating guide 420, the process gas can be heated before entering the cavity 110 of the arc-starting chamber 100, thereby preventing the process gas entering the cavity 110 of the arc-starting chamber 100 from condensing into a solid due to the temperature drop, and further reducing the solid residue in the cavity 110 of the arc-starting chamber 100.

[0055] (3) By setting a vibration unit 600 on the outer wall of the arc-starting chamber 100, the vibration unit 600 can be activated during machine maintenance. Under the action of the vibration force generated by the vibration unit 600, the solid residue in the cavity 110 of the arc-starting chamber 100 can be effectively stripped, thereby further reducing the frequency of maintenance or replacement of the ion source.

[0056] (4) By setting the rotary guide 420 as a conical structure with an inner diameter that gradually decreases along the direction from the end of the tangential air inlet 421 of the rotary guide 420 to the end of the air outlet of the rotary guide 420, the process gas can be accelerated when passing through the rotary guide 420 due to the reduction of the flow channel cross-sectional area, thus making it easier to form a rotating airflow.

[0057] (5) By setting all the corners 111 of the cavity 110 of the arc-starting chamber 100 to be arc-shaped, the cavity 110 of the arc-starting chamber 100 can be designed as a structure without dead corners, thereby effectively avoiding solid residues in the dead corners of the cavity 110 of the arc-starting chamber 100, and further reducing the solid residues in the cavity 110 of the arc-starting chamber 100, effectively reducing the frequency of maintenance or replacement of the ion source.

[0058] It should be noted that in the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0059] It should also be noted that the above description is only a description of the preferred embodiment of this utility model and is not intended to limit the scope of this utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure are within the protection scope of this utility model. Obviously, those skilled in the art can make various modifications and variations to the utility model without departing from the spirit and scope of this utility model. Therefore, if these modifications and variations fall within the scope of this utility model and its equivalents, this utility model also intends to include these modifications and variations.

Claims

1. An ion source, characterized in that, It includes an arc initiation chamber, a cathode unit, a reflection unit, and a gas introduction unit; The cathode unit is disposed on one side of the arc-starting chamber, and the reflective unit is disposed on the other side of the arc-starting chamber, with at least a portion of the cathode unit and at least a portion of the reflective unit located within the cavity of the arc-starting chamber. The gas inlet unit includes an inlet pipe and a rotating guide. The rotating guide is provided with a tangential inlet. The inlet pipe is connected to the tangential inlet. The outlet of the rotating guide is connected to the inlet of the arc-starting chamber.

2. The ion source according to claim 1, characterized in that, It also includes a temperature control unit, which is disposed on the outer periphery of the rotating guide.

3. The ion source according to claim 2, characterized in that, The temperature control unit includes a housing and a plurality of heating elements disposed on the inner wall of the housing. The rotating guide is disposed inside the housing, and the outlet end of the rotating guide extends to the outside of the housing.

4. The ion source according to claim 1, characterized in that, It also includes a vibration unit, which is disposed on the outer wall of the arc-starting chamber.

5. The ion source according to claim 4, characterized in that, The vibration unit includes a plurality of ultrasonic vibrators, wherein at least one of the ultrasonic vibrators is disposed near the cathode unit and at least one of the ultrasonic vibrators is disposed near the reflection unit.

6. The ion source according to claim 1, characterized in that, The inner diameter of the rotary guide gradually decreases from the end where the tangential air inlet of the rotary guide is located to the end where the air outlet of the rotary guide is located.

7. The ion source according to claim 1, characterized in that, The corners of the arc-initiating chamber are all rounded.

8. The ion source according to claim 1, characterized in that, The cathode unit includes a filament and a cathode cap. The cathode cap is electrically insulated from the side wall of the arc-starting chamber. The filament is located inside the cathode cap, and there is a gap between the filament and the inner wall of the cathode cap.

9. The ion source according to claim 1, characterized in that, It also includes an extraction unit, which is located near the ion outlet of the arc-starting chamber. The extraction unit includes a suppression electrode and a ground electrode, with the suppression electrode located closer to the ion outlet than the ground electrode.

10. An ion implantation machine, characterized in that, The ion source includes any one of claims 1 to 9.

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