Single chamber multi-chamber PEALD coating system

Abstract

The utility model provides a single cavity multi -chamber PEALD coating system relates to semiconductor equipment technical field. Its characterized in be including: Process cavity subassembly, the plasma generation cavity subassembly of setting in process cavity subassembly front side, the gas distribution subassembly of setting in process cavity subassembly left side or right side and the vacuum filter subassembly of connecting to process cavity subassembly back side, wherein, process cavity subassembly is arranged with at least two reaction chambers, and every reaction chamber is communicated to same plasma generation cavity subassembly through a connecting channel respectively, so as to supply plasma to multiple reaction chambers through same plasma generation cavity subassembly simultaneously, every process cavity subassembly is still provided with a process gas channel that communicates reaction chamber, and process gas channel communicates gas distribution subassembly to supply reaction gas into reaction chamber. Through the scheme to make compact structure, and improve the capacity.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and more specifically, to a single-cavity multi-chamber PEALD coating system. Background Technology

[0002] Plasma-enhanced atomic layer deposition (PEALD) technology is a key process in semiconductor manufacturing, and the performance of its equipment directly affects coating quality and production efficiency. Current mainstream PEALD equipment suffers from three main technical defects: First, its single-chamber coating architecture means a single plasma system serves only one chamber, resulting in low equipment throughput and insufficient plasma utilization. Second, it employs a complex nested inner and outer cavity structure, achieving heating through the outer cavity. This design not only increases cavity complexity but also leads to maintenance difficulties. Third, it uses a traditional spiral ICP coil solution. Because the coil needs to be wound around the outer wall of the plasma chamber, the plasma generating chamber is forced to be designed as a deep cavity structure. This structure makes it difficult to maintain temperature uniformity through chamber heat conduction, requiring additional heating systems such as mold temperature controllers, ultimately resulting in excessively large longitudinal dimensions and excessive floor space. Although existing technologies, such as the multi-chamber structure disclosed in patent CN116180051A, still require an independent plasma generating device for each reaction chamber, leading to a large overall equipment size and low system integration. These technical defects severely limit the applicability of PEALD equipment in modern semiconductor production lines. Utility Model Content

[0003] This invention discloses a single-cavity multi-chamber PEALD coating system, which aims to solve the problems mentioned above.

[0004] The present invention adopts the following solution: A single-cavity multi-chamber PEALD coating system includes: a process chamber assembly, a plasma generating chamber assembly disposed at the front of the process chamber assembly, a gas distribution assembly disposed at the left or right side of the process chamber assembly, and a vacuum filter assembly connected to the rear of the process chamber assembly; wherein, at least two reaction chambers are arranged within the process chamber assembly, and each reaction chamber is connected to the same plasma generating chamber assembly through a connecting channel, so as to simultaneously supply plasma to multiple reaction chambers through the same plasma generating chamber assembly; each process chamber assembly is also provided with a process gas channel connecting the reaction chambers, and the process gas channel is connected to the gas distribution assembly to supply reaction gas into the reaction chambers.

[0005] Furthermore, the gas distribution assembly is adapted to be introduced from above the process chamber assembly into the plasma generating chamber assembly and the process gas channel, so as to introduce the reaction gas into the plasma generating chamber assembly and the reaction chamber respectively.

[0006] Furthermore, the plasma generating chamber assembly includes a planar ICP coil to reduce the depth of the plasma generating chamber, thereby achieving uniform temperature through chamber heat conduction.

[0007] Furthermore, a lifting assembly is provided below the process chamber. The lifting assembly includes a lifting platform for simultaneously supporting at least two material racks. The lifting platform is used to synchronously control the material racks in and out of each reaction chamber.

[0008] Furthermore, the reaction chamber includes a semi-circular front end and a square rear end, wherein the process gas channel and the connecting channel are distributed on the semi-circular front end.

[0009] Furthermore, the vacuum filtration assembly includes a vacuum pump, a vacuum extraction pipe, and a filter canister, wherein the vacuum extraction pipe is connected to the square rear end of each of the reaction chambers and connected to the filter canister to filter the exhaust gas, and the vacuum pump is connected to the downstream end of the filter canister.

[0010] Furthermore, a butterfly valve is installed on the vacuum extraction pipe.

[0011] Furthermore, the gas distribution assembly is provided with a bypass gas path, which is connected to the vacuum extraction pipe to directly export the residual process gas in the gas distribution assembly to the vacuum filter assembly.

[0012] Furthermore, a heating device is provided around the periphery of the process cavity assembly.

[0013] Furthermore, each of the reaction chambers has a removable bushing structure on its inner wall for easy maintenance.

[0014] Beneficial effects: This invention provides a single-cavity multi-chamber PEALD coating system. By integrating multiple reaction chambers within the same process chamber assembly and sharing a plasma generation chamber assembly, it solves the problems of low capacity, insufficient plasma utilization, and complex structure of traditional equipment. It has the advantages of compact structure, convenient maintenance, high equipment capacity, and high plasma utilization. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the back structure of a single-cavity multi-chamber PEALD coating system according to an embodiment of the present invention; Figure 2 This is a front structural schematic diagram of a single-cavity multi-chamber PEALD coating system according to an embodiment of the present invention; Figure 3 This is a cross-sectional structural diagram of a single-cavity multi-chamber PEALD coating system according to an embodiment of the present invention; Reference numerals: 1. Process chamber assembly; 11. Reaction chamber; 12. Heating device; 13. Process gas channel; 14. Connecting channel; 2. Plasma generation chamber assembly; 3. Vacuum filter assembly; 31. Vacuum pump; 32. Vacuum extraction pipe; 33. Butterfly valve; 34. Filter can; 4. Gas distribution assembly; 41. Bypass gas path; 5. Lifting assembly; 6. Material rack; 7. Lifting platform; 8. Bushing. Detailed Implementation

[0016] Combination Figures 1 to 3 As shown, this embodiment provides a single-cavity multi-chamber PEALD coating system, including: a process chamber assembly 1, a plasma generating chamber assembly 2 disposed on the front side of the process chamber assembly 1, a gas distribution assembly 4 disposed on the left or right side of the process chamber assembly 1, and a vacuum filter assembly 3 connected to the rear side of the process chamber assembly 1; wherein, the process chamber assembly 1 is provided with at least two reaction chambers 11, and each reaction chamber 11 is connected to the same plasma generating chamber assembly 2 through a connecting channel 14, so that plasma can be supplied to multiple reaction chambers 11 simultaneously through the same plasma generating chamber assembly 2; each process chamber assembly 1 is also provided with a process gas channel 13 connecting the reaction chamber 11, and the process gas channel 13 is connected to the gas distribution assembly 4 to supply reaction gas into the reaction chamber 11.

[0017] The process chamber assembly 1 refers to the main structure integrating multiple independent reaction spaces, specifically, it can be divided into multiple reaction chambers 11 to achieve multi-station parallel processing. The plasma generation chamber assembly 2 refers to the device for generating and distributing plasma, specifically, it can be a planar coil structure directly installed on the front side of the process chamber, delivering plasma to each reaction chamber 11 through connecting channels 14. The gas distribution assembly 4 is a device for delivering process gases to the reaction chambers 11, specifically, it can be a multi-channel manifold structure accessed from the side of the chamber, connected to each process gas channel 13 through branch pipes. The vacuum filtration assembly 3 is a system for treating exhaust gases, specifically, it can be connected to the rear end of each reaction chamber 11 through independent extraction pipes, and the gas is purified by a filter tank 34 and discharged by a vacuum pump 31. Two or more reaction chambers 11 are arranged side-by-side within the process chamber assembly 1, and the front end of each chamber is connected to the central plasma generation chamber through radially distributed connecting channels 14. The plasma diffuses uniformly to each reaction chamber 11 through the connecting channels 14, achieving multi-chamber sharing of a single plasma source. The gas distribution assembly 4 supplies gas independently to each reaction chamber 11 through the laterally extending process gas channel 13, ensuring that the process gases in different chambers do not interfere with each other. The reaction chamber 11 adopts an integral single-chamber design, eliminating the traditional inner and outer chamber structure, and installing a replaceable bushing 8 inside, which simplifies the cleaning and maintenance process while maintaining process stability.

[0018] By sharing the plasma generation chamber assembly 2, the space occupied by the plasma system is reduced by more than 60% while maintaining the same production capacity. Compared to the traditional internal and external chamber structure, the single-chamber design eliminates the external chamber heating module, achieving temperature control directly through the chamber's peripheral heating device 12, thus reducing the equipment's depth by approximately 40%. This makes the multi-chamber coating equipment more compact, increasing production capacity while avoiding equipment size expansion. The shared plasma source design reduces system complexity and energy consumption, and the single-chamber structure, combined with the removable bushing 8, significantly shortens maintenance cycles. The planar plasma generation chamber assembly 2 eliminates the need for an external heating system, further reducing the equipment's footprint and resolving the core contradiction between the excessive size and maintenance difficulties of multi-chamber equipment.

[0019] Continue to combine Figures 1 to 3 As shown, in this embodiment, the gas distribution assembly 4 is adapted to be introduced from above the process chamber assembly 1 into the plasma generating chamber assembly 2 and the process gas channel 13, so as to introduce the reaction gas into the plasma generating chamber assembly 2 and the reaction chamber respectively. Specifically, a vertically arranged gas inlet can be used to facilitate uniform gas distribution from top to bottom. The reaction gas can be implemented using an independently controlled diversion valve to avoid gas mixing or interference. By introducing the gas centrally from the top, pipeline crossings and modifications to the chamber structure are reduced.

[0020] In a preferred embodiment, the plasma generating chamber assembly 2 includes a planar ICP coil, which reduces the depth of the plasma generating chamber, thereby achieving uniform temperature through chamber heat conduction. This eliminates the need for a heating system such as a mold temperature controller to heat the plasma generating chamber, resulting in a smaller device depth and footprint. The planar ICP coil refers to a coil structure arranged parallel to the surface of the plasma generating chamber assembly 2. Specifically, it can be implemented using a helical or concentric circle flat coil layout. The electromagnetic field it generates can cover a larger area of ​​the chamber space, thereby improving the uniformity of plasma distribution. Chamber heat conduction refers to heat transfer through the metal cavity material of the plasma generating chamber assembly 2 itself, such as using high thermal conductivity materials like aluminum or copper. This ensures uniform temperature distribution within the cavity, eliminating the need for an external heating device 12. Because the coil adopts a planar layout, the depth of the plasma generating chamber assembly 2 is reduced. Simultaneously, the high thermal conductivity of the cavity material allows heat to diffuse evenly across the entire cavity surface. Utilizing the cavity's own thermal conductivity to replace an external heating system simplifies the device structure.

[0021] In this embodiment, a lifting assembly 5 is provided below the process chamber. The lifting assembly 5 includes a lifting platform 7 for simultaneously supporting at least two material racks 6. The lifting platform 7 is used to synchronously control the material racks 6 in each reaction chamber 11 to enter and exit the reaction chamber 11. The lifting assembly 5 can use a hydraulic drive mechanism or a motor drive mechanism in conjunction with a guide rail to achieve vertical movement, controlling the entry and exit of the material racks 6 within the reaction chamber 11. The lifting platform 7 refers to a platform structure that supports materials and can simultaneously fix multiple material racks 6; for example, it can be designed with two or more slot structures. The lifting assembly 5 drives the lifting platform 7 to move vertically via a drive mechanism. When loading or unloading materials, the lifting platform 7 descends to the bottom of the reaction chamber 11, at which point multiple material racks 6 can be placed on the platform simultaneously. After loading is completed, the lifting platform 7 rises to a preset height, allowing the material racks 6 to enter the corresponding reaction chamber 11 for the coating process. During maintenance, the lifting platform 7 can be completely lowered to facilitate cleaning of the inside of the reaction chamber 11 or replacement of the bushing 8 structure. Since the loading and unloading of multiple material racks 6 are controlled by the same lifting platform 7, the time wasted by operating them one by one is avoided. By synchronously controlling multiple material racks 6 with a single lifting platform 7, the number of mechanical structures is reduced, the operation process is simplified, and the material loading and unloading time is shortened.

[0022] Combination Figure 3 As shown, in a preferred embodiment, the reaction chamber 11 includes a semi-circular front end and a square rear end. Process gas channels 13 and connecting channels 14 are distributed on the semi-circular front end, and are symmetrically distributed thereon. The semi-circular front end refers to the arc-shaped structure of the reaction chamber 11 near the plasma generation chamber assembly 2, with an arc range of, for example, 120° to 180°. This structure optimizes the gas flow path and reduces eddy current generation. The square rear end refers to the regular geometric structure of the reaction chamber 11 away from the plasma generation chamber assembly 2. This structure facilitates connection with the vacuum filter assembly 3 via a planar interface. In another preferred embodiment, the process gas channels 13 and connecting channels 14 are symmetrically arranged on both sides of the semi-circular front end. This distribution balances the gas supply pressure and the plasma diffusion path.

[0023] Process gas channel 13 extends from gas distribution assembly 4 to the semi-circular front end, uniformly delivering the reaction gas into the reaction chamber 11. Connecting channel 14 extends from plasma generation chamber assembly 2 to the semi-circular front end, allowing plasma to diffuse into the reaction chamber 11 along a symmetrical path. The symmetrically distributed process gas channel 13 and connecting channel 14 form complementary gas flow patterns at the semi-circular front end, converging in the central region of the reaction chamber 11 to form a stable reaction zone. The square rear end connects to vacuum extraction pipe 32 via a planar interface, allowing exhaust gas to exit along a straight path, reducing gas stagnation.

[0024] The vacuum filtration assembly 3 includes a vacuum pump 31, a vacuum extraction pipe 32, and a filter canister 34. The vacuum extraction pipe 32 is connected to the square rear end of each reaction chamber 11 and then to the filter canister 34 to filter the exhaust gas. The vacuum pump 31 is connected to the downstream end of the filter canister 34. A butterfly valve 33 is installed on the vacuum extraction pipe 32. The vacuum extraction pipe 32 is connected to the square rear end of each reaction chamber 11 for convenient collection and discharge of exhaust gas. The filter canister 34 is a device for filtering particulate matter and harmful components in the exhaust gas. It can be implemented using a multi-layer filter structure and connected in series at the end of the vacuum extraction pipe 32 to ensure the exhaust gas treatment effect. The butterfly valve 33 is a flow regulating valve installed on the vacuum extraction pipe 32. It can be implemented manually or electrically, and the pumping rate is controlled by adjusting the opening angle. The vacuum extraction pipe 32 extends from the square rear end of each reaction chamber 11 and converges at the inlet of the filter canister 34. The exhaust gas is purified by the filter canister 34 and then discharged by the vacuum pump 31. By uniformly configuring the vacuum filter assembly 3, the exhaust gas from multiple reaction chambers 11 is centrally processed, reducing the number of vacuum pumps 31. At the same time, the introduction of the butterfly valve 33 enables independent control of the pumping flow rate, simplifying the structure while ensuring process stability, thereby reducing equipment manufacturing costs and the footprint of the vacuum filter system.

[0025] In a preferred embodiment, a bypass gas path 41 is provided on the gas distribution assembly 4, which is connected to the vacuum extraction pipe 32 to directly export residual process gas in the gas distribution assembly 4 to the vacuum filter assembly 3. The bypass gas path 41 refers to an auxiliary gas flow path provided in the gas distribution assembly 4, which can be implemented using an independent pipeline, used to quickly discharge unreacted gas from the gas distribution assembly 4 after the process is completed. During the coating process, the gas distribution assembly 4 delivers reaction gas to the reaction chamber 11 through the process gas channel 13. When the process steps are switched or ended, some incompletely consumed process gas may remain inside the gas distribution assembly 4. At this time, the valve of the bypass gas path 41 is opened, and the residual gas directly enters the vacuum extraction pipe 32 through the bypass gas path 41, and is then pumped by the vacuum pump 31 to the filter tank 34 for processing. The negative pressure suction capability of the existing vacuum filter assembly 3 is used to achieve rapid removal of residual gas. The residual gas is directly introduced into the vacuum filtration system through the independent bypass gas path 41, which avoids the risk of gas stagnation or reverse diffusion inside the chamber. At the same time, it simplifies the exhaust path structure and reduces the complexity of cleaning the gas pipeline during equipment maintenance.

[0026] It should be noted that in this embodiment, a heating device 12 is arranged around the periphery of the process chamber assembly 1. The heating device 12 can be implemented using resistance heating elements or annular heating tubes, and it is distributed circumferentially along the outer wall of the process chamber to achieve uniform heat conduction. It can be installed on the four sides, the top and bottom sides. This device transfers heat through direct contact with the outer wall of the chamber, avoiding the heat loss problem of traditional external cavity heating structures. At the same time, it reduces the dependence on an independent temperature control system, eliminates the space occupation caused by the external cavity structure, and shortens the spatial distance between the heat source and the reaction chamber 11, which is conducive to achieving rapid temperature adjustment.

[0027] In a preferred embodiment, a removable bushing 8 structure is provided on the inner wall of each reaction chamber 11. The bushing 8 structure is an independent component attached to the inner surface of the reaction chamber 11, specifically implemented using a snap-fit ​​connection or bolt fixing method. This structure allows for a separable assembly relationship with the main body of the reaction chamber 11. The bushing 8 structure can be made of ceramic or high-temperature resistant polymer, and for example, it can be implemented using a split-type splicing structure. This design allows the bushing 8 to be replaced individually without disassembling the main chamber body. The bushing 8 covers the inner surface of the chamber via a mechanical connection, forming a working interface that directly contacts the process gas and plasma. During maintenance operations, the bushing 8 can be removed entirely by releasing the snaps or removing the bolts, thus avoiding damage to the main chamber structure. This structure allows deposits generated during the coating process to primarily adhere to the surface of the bushing 8; when cleaning or replacement is required, only the bushing 8 component needs to be treated.

[0028] In some specific embodiments, the bushing 8 can adopt a segmented design, for example, dividing the semi-circular front end and the square rear end into two independent modules. The split bushing 8 can be quickly disassembled and assembled through a dovetail groove structure, and maintenance only requires replacing the bushing 8 module in a specific area. The surface of the bushing 8 can be provided with a flow guide groove structure to guide the flow path of process gas.

[0029] Through the above technical solution, this application solves the problem of maintenance difficulties caused by the complex internal and external cavity structure in the prior art, making the equipment more compact and conducive to improving production capacity and reducing equipment costs.

[0030] It should be understood that the above are only preferred embodiments of the present utility model, and the protection scope of the present utility model is not limited to the above embodiments. All technical solutions that fall within the scope of the present utility model are protected by the present utility model.

[0031] The accompanying drawings used in the above description of the embodiments only show some embodiments of the present invention and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

Claims

1. A single-cavity multi-chamber PEALD coating system, characterized in that, include: The process chamber assembly, the plasma generating chamber assembly disposed on the front side of the process chamber assembly, the gas distribution assembly disposed on the left or right side of the process chamber assembly, and the vacuum filter assembly connected to the rear side of the process chamber assembly. The process chamber assembly is provided with at least two reaction chambers, and each reaction chamber is connected to the same plasma generating chamber assembly through a connecting channel, so that plasma can be supplied to multiple reaction chambers simultaneously through the same plasma generating chamber assembly; each process chamber assembly is also provided with a process gas channel that connects to the reaction chamber, and the process gas channel connects to the gas distribution assembly to supply reaction gas into the reaction chamber.

2. The single-cavity multi-chamber PEALD coating system according to claim 1, characterized in that, The gas distribution assembly is adapted to be introduced from above the process chamber assembly into the plasma generating chamber assembly and the process gas channel, so as to introduce the reaction gas into the plasma generating chamber assembly and the reaction chamber respectively.

3. The single-cavity multi-chamber PEALD coating system according to claim 1, characterized in that, The plasma generating chamber assembly includes a planar ICP coil to minimize the depth of the plasma generating chamber, thereby achieving uniform temperature through chamber heat conduction.

4. The single-cavity multi-chamber PEALD coating system according to claim 1, characterized in that, A lifting assembly is provided below the process chamber. The lifting assembly includes a lifting platform for simultaneously supporting at least two material racks. The lifting platform is used to synchronously control the material racks in and out of each reaction chamber.

5. The single-cavity multi-chamber PEALD coating system according to claim 1, characterized in that, The reaction chamber includes a semi-circular front end and a square rear end, wherein the process gas channel and the connecting channel are distributed on the semi-circular front end.

6. The single-cavity multi-chamber PEALD coating system according to claim 5, characterized in that, The vacuum filtration assembly includes a vacuum pump, a vacuum extraction pipe, and a filter canister. The vacuum extraction pipe is connected to the square rear end of each of the reaction chambers and to the filter canister to filter the exhaust gas. The vacuum pump is connected to the downstream end of the filter canister.

7. The single-cavity multi-chamber PEALD coating system according to claim 6, characterized in that, A butterfly valve is installed on the vacuum extraction pipe.

8. The single-cavity multi-chamber PEALD coating system according to claim 7, characterized in that, The gas distribution assembly is provided with a bypass gas path, which is connected to the vacuum extraction pipe to directly export the residual process gas in the gas distribution assembly to the vacuum filter assembly.

9. The single-cavity multi-chamber PEALD coating system according to claim 1, characterized in that, Heating devices are arranged around the periphery of the process cavity assembly.

10. The single-cavity multi-chamber PEALD coating system according to claim 1, characterized in that, Each of the reaction chambers has a removable bushing structure on its inner wall for easy maintenance.

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