A low self-consumption power supply switch control circuit

Abstract

The utility model relates to power control circuit technical field discloses a kind of low self-consumption power supply switch control circuit, including control signal input module, switch drive module, main power switch module, protection clamping module and filter stabilizing module, the control signal input module is electrically connected with switch drive module, the switch drive module is electrically connected with main power switch module, the main power switch module is electrically connected with protection clamping module, the filter stabilizing module is electrically connected with main power switch module.The utility model in which, the function of low self-consumption power supply switch is realized by the collaborative work of each module, and through reasonable component selection and circuit topology design, the accurate control to power supply passage is realized, under the non-working (dormancy) state of circuit, greatly reduce self-consumption power, satisfy the power management demand of low-power equipment.

Description

Technical Field

[0001] This utility model relates to the field of power control circuit technology, and in particular to a low self-consumption power switch control circuit. Background Technology

[0002] In battery-powered devices and power-sensitive electronic systems, power path control is crucial. Therefore, there is a need to develop a low-self-power-consumption power switch control circuit that can achieve precise power on / off control while minimizing its own static power consumption, ultimately improving the device's battery life, energy efficiency, and reliability.

[0003] A search revealed Chinese patent publication number CN219718207U, which discloses a power switch control circuit comprising a switching device SW1, resistors R2 and R8, and a switch control sub-circuit. The switch control sub-circuit includes MOSFETs Q2 and Q3, resistors R3, R6, and R9, and capacitors C5 and C4. The source of MOSFET Q3 is grounded, and the drain of MOSFET Q3 is connected to the gate of MOSFET Q2 through resistor R6. The source of MOSFET Q2 is connected to the power supply terminal and the first end of resistor R3. The second end of resistor R3 is connected to the gate of MOSFET Q2 and the second end of capacitor C5. The first end of capacitor C5 is connected to the drain of MOSFET Q2.

[0004] The aforementioned utility model uses low-cost and low-current switches and buttons to control power switches with high operating current, reducing the selection requirements for switches and buttons. However, in actual use, traditional power switch circuits often have high self-power consumption in standby or non-working states, leading to reduced battery life, additional system power consumption, and affecting device performance and usage time. Utility Model Content

[0005] To overcome the above shortcomings, this utility model provides a low self-power consumption power switch control circuit, which aims to improve the problem that traditional power switch circuits in the prior art often have high self-power consumption in standby or non-working states, resulting in reduced battery life, additional system power consumption, and affecting the performance and usage time of the device.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a low self-dissipation power supply switch control circuit, comprising a control signal input module, a switch drive module, a main power switch module, a protection clamping module, and a filtering and stabilizing module, characterized in that: the control signal input module is electrically connected to the switch drive module, the switch drive module is electrically connected to the main power switch module, the main power switch module is electrically connected to the protection clamping module, and the filtering and stabilizing module is electrically connected to the main power switch module.

[0007] Through the above technical solution, by the cooperation of each module, the power supply to the load can be safely and stably controlled according to the input of the control signal, thus realizing the overall function of the low self-power power switch control circuit.

[0008] As a further description of the above technical solution: The control signal input module consists of an ON / OFF signal input port and a current-limiting resistor R43, and the ON / OFF signal input port is connected to the current-limiting resistor R43.

[0009] The above technical solution allows for the input of high and low levels via an external control signal ON / OFF to the circuit. Then, the current flowing into the subsequent switch driver module is limited by the current-limiting resistor R43, preventing excessive input signals from damaging the base of the NPN transistor Q11, thereby achieving safe transmission of the control signal.

[0010] As a further description of the above technical solution: The switch drive module consists of an NPN transistor Q11 and a pull-down resistor R15. One end of the pull-down resistor R15 is connected to the base of the NPN transistor Q11, and the other end is grounded. The emitter of the NPN transistor Q11 is grounded.

[0011] The above technical solution allows the base voltage of NPN transistor Q11 to be stably pulled down to 0V by pull-down resistor R15 when there is no external control signal, ensuring reliable cutoff of NPN transistor Q11 and preventing false turn-on due to floating base. By grounding the emitter of NPN transistor Q11, a reference potential for the current loop can be provided for the transistor.

[0012] As a further description of the above technical solution: The main power switch module consists of a current-limiting resistor R14 and a P-channel MOSFET Q10. The source of the P-channel MOSFET Q10 is connected to the power input terminal, and the drain of the P-channel MOSFET Q10 is connected to the load terminal for powering the load.

[0013] The above technical solution establishes a main power path from the power supply to the load. When the P-channel MOSFET Q10 is turned on, it can transmit the power supply voltage to the load to provide power. When it is turned off, it cuts off the path, thus controlling the on / off state of the power supply to the load. The current-limiting resistor R14 can limit the current flowing to the gate of the P-channel MOSFET Q10 and simultaneously pull the gate voltage down to below the source voltage, satisfying the conduction condition of the P-channel MOSFET, thereby achieving reliable driving of the main power switch.

[0014] As a further description of the above technical solution: The protection clamping module consists of a Zener diode D21, one end of which is connected to the power input terminal and the other end is connected to the gate of the P-channel MOSFET Q10.

[0015] The above technical solution works as follows: when a voltage spike or abnormally high voltage occurs, the Zener diode D21 will reverse break down, clamping the gate voltage of the P-channel MOSFET Q10 to a safe value, preventing excessive voltage from damaging the P-channel MOSFET Q10.

[0016] As a further description of the above technical solution: The filtering and stabilizing module consists of a filter capacitor C13. One end of the filter capacitor C13 is connected to the drain of the P-channel MOSFET Q10, and the other end is grounded.

[0017] Through the above technical solution, the filter capacitor C13 plays a filtering and stabilizing role, which can filter out high-frequency noise in the output voltage, making the output 10V voltage more stable and providing a clean power supply to the load.

[0018] As a further description of the above technical solution: The current-limiting resistor R43 is connected to the base of the NPN transistor Q11.

[0019] The above technical solution limits the current flowing from the ON / OFF signal input port into the base of the NPN transistor Q11, preventing excessive current from damaging the NPN transistor Q11. At the same time, it ensures that the input signal can effectively control the conduction and cutoff of the NPN transistor Q11, providing reliable control logic for subsequent switch drive.

[0020] As a further description of the above technical solution: The collector of the NPN transistor Q11 is connected to one end of the current-limiting resistor R14, and the other end of the current-limiting resistor R14 is connected to the gate of the P-channel MOS transistor Q10.

[0021] The above technical solution works as follows: When the NPN transistor Q11 is turned on, its collector potential is pulled low. The current-limiting resistor R14 pulls the gate voltage of the NPN transistor Q11 down to below the source voltage, satisfying the conduction condition of the P-channel MOSFET Q10. This allows the P-channel MOSFET Q10 to conduct and supply power to the load. The current-limiting resistor R14 can limit the current flowing from the collector of the NPN transistor Q11 to the gate of the P-channel MOSFET Q10, preventing excessive current from damaging the gate of the P-channel MOSFET Q10.

[0022] This utility model has the following beneficial effects: 1. In this utility model, the circuit controls the switch drive module through the control signal input module, thereby controlling the on / off state of the main power switch module. The protection clamp module ensures the safety of circuit components, and the filtering and stabilizing module improves the output voltage quality. Through the coordinated work of each module, the low self-power consumption power switch function is realized. Furthermore, through reasonable component selection and circuit topology design, precise control of the power path is achieved. In the circuit non-working (dormant) state, its own power consumption is greatly reduced, meeting the power management requirements of low-power devices.

[0023] 2. In this utility model, the combination of NPN transistor Q11 and P-channel MOSFET Q10 is used to precisely control the high-voltage path with a weak signal. The switching response is fast, the power supply is stable when on, and the circuit is reliably disconnected when off, meeting the power control requirements of different devices. By selecting small-signal, low-power components and combining Zener diode protection, capacitor filtering and other designs, the circuit performance is guaranteed while further reducing power consumption, and the stability and reliability of the circuit are improved. It has a wide range of applications and can be used in various electronic devices with strict power consumption control.

[0024] 3. In this utility model, by disconnecting the main circuit path in the sleep state, only the minimal static leakage current of components such as transistors and MOSFETs is retained. Compared with traditional power switch circuits, the self-power consumption is greatly reduced, effectively improving the battery life of battery-powered devices or reducing the standby power consumption of low-power systems. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the circuit principle of a low self-consumption power supply switch control circuit proposed in this utility model. Figure 2 This is a schematic block diagram of the module connection of a low self-consumption power switch control circuit proposed in this utility model. Detailed Implementation

[0026] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0027] Reference Figure 1The present invention provides an embodiment of a low self-consumption power supply switch control circuit, comprising a control signal input module, a switch drive module, a main power switch module, a protection clamp module, and a filter stabilization module. The control signal input module is electrically connected to the switch drive module, the switch drive module is electrically connected to the main power switch module, the main power switch module is electrically connected to the protection clamp module, and the filter stabilization module is electrically connected to the main power switch module. Specifically, the control signal input module can receive high and low level signals from external control and then safely transmit the signals to the switch driver module. The switch driver module can amplify the input low-voltage control signals into signals that can drive the main power switch, thus switching the power supply to the load. The main power switch module acts as the core switch for high-current paths. When it is on, it can transmit +10V power to the load, and when it is off, it cuts off the power supply. The protection clamping module prevents the gate of the P-channel MOSFET Q10 in the main power switch module from being over-voltage broken down, thus protecting the main power switch from damage. The filtering and stabilization module can filter out high-frequency noise or ripple caused by load changes in the power supply, making the 10V voltage output to the load more stable and avoiding voltage fluctuations affecting the load operation.

[0028] Reference Figure 1 and Figure 2 The control signal input module consists of an ON / OFF signal input port and a current-limiting resistor R43. The ON / OFF signal input port is connected to the current-limiting resistor R43. The switch drive module consists of an NPN transistor Q11 and a pull-down resistor R15. One end of the pull-down resistor R15 is connected to the base of the NPN transistor Q11, and the other end is grounded. The emitter of the NPN transistor Q11 is grounded. Specifically, the external control signal ON / OFF receives external high and low level signals, while the current-limiting resistor R43 limits the current flowing into the subsequent switch driver module, preventing damage to subsequent components due to excessive input current. This ensures that the input signal can drive the switch driver module with an appropriate current. When the control signal input module is high, the current flows through the current-limiting resistor R43 into the base of the NPN transistor Q11, turning on the NPN transistor Q11. The pull-down resistor R15 is connected between the base of the NPN transistor Q11 and ground. When a low-level signal is input, it pulls down the base voltage of the NPN transistor Q11, ensuring reliable cutoff of the NPN transistor Q11 and preventing malfunctions.

[0029] Reference Figure 1 and Figure 2The main power switching module consists of a current-limiting resistor R14 and a P-channel MOSFET Q10. The source of the P-channel MOSFET Q10 is connected to the power input terminal, and the drain of the P-channel MOSFET Q10 is connected to the load terminal for power supply to the load. The protection clamping module consists of a Zener diode D21. One end of the Zener diode D21 is connected to the power input terminal, and the other end is connected to the gate of the P-channel MOSFET Q10. The filtering and stabilization module consists of a filter capacitor C13. One end of the filter capacitor C13 is connected to the drain of the P-channel MOSFET Q10, and the other end is grounded. The current-limiting resistor R43 is connected to the base of an NPN transistor Q11. The collector of the NPN transistor Q11 is connected to one end of the current-limiting resistor R14, and the other end of the current-limiting resistor R14 is connected to the gate of the P-channel MOSFET Q10. Specifically, when the external control signal ON / OFF is not input, pull-down resistor R15 can pull the base voltage of NPN transistor Q11 down to 0V, ensuring reliable cutoff of NPN transistor Q11. If there is residual charge at the base of NPN transistor Q11, pull-down resistor R15 can also discharge it to ground, ensuring stable cutoff state. When NPN transistor Q11 is turned on, current-limiting resistor R14 can pull down the gate voltage of P-channel MOSFET Q10. At this time, the gate voltage is lower than the source voltage, and P-channel MOSFET Q10 is turned on, so that +10V power can be output to the load through P-channel MOSFET Q10, thereby powering the load. Since the source of P-channel MOSFET Q10 is connected to +10V power, its gate voltage needs to be lower than the source voltage to conduct, but the voltage between the gate and source... The voltage difference Vgs has a strict safety limit. At this time, the voltage regulation characteristic after reverse breakdown of the Zener diode D21 is used to clamp the gate voltage within a safe range, thereby ensuring that the voltage difference Vgs never exceeds the Zener diode D21's regulation value, protecting the P-channel MOSFET Q10 from gate overvoltage damage. Overvoltage protection of the P-channel MOSFET Q10 by the Zener diode D21 can effectively cope with voltage spikes caused by power supply voltage fluctuations or external interference, improving the reliability and stability of the circuit. When the NPN transistor Q11 is turned off, the gate of the P-channel MOSFET Q10 has no discharge path and remains at a high level. The P-channel MOSFET Q10 is turned off, cutting off the power supply to the load. The filter capacitor C13 in the filter stabilization module can filter the voltage output of the P-channel MOSFET Q10, removing high-frequency noise and stabilizing the output voltage to provide a clean 10V power supply to the load.

[0030] Working principle: First, the external control signal ON / OFF is input at high or low level. Then, it is current-limited by resistor R43, and the current is transmitted to the base of NPN transistor Q11. The high or low level signal output by the control signal input module can control the conduction and cutoff state of NPN transistor Q11 through R43. At the same time, pull-down resistor R15 is used to stabilize the cutoff state. Then, the collector of NPN transistor Q11 in the switch drive module is connected to the gate of P-channel MOSFET Q10 in the main power switch module through current-limiting resistor R14. When NPN transistor Q11 is turned on, current-limiting resistor R14 limits the current flowing from the collector of NPN transistor Q11 to the gate of P-channel MOSFET Q10, avoiding excessive current damage to the gate of P-channel MOSFET Q10 and ensuring that the circuit can work stably and safely. When the external control signal ON / OFF is high, after current limiting by current limiting resistor R43, sufficient current is supplied to the base of NPN transistor Q11, causing Q11 to conduct. Once Q11 is turned on, the gate voltage of P-channel MOSFET Q10 is pulled low through current limiting resistor R14. Since the source of P-channel MOSFET Q10 is connected to +10V, the gate voltage is lower than the source voltage, and Q10 conducts. The +10V power supply is then output to the 10V load terminal through P-channel MOSFET Q10, providing power to the load. At this time, Zener diode D21 reverse-regulates the voltage to ensure the gate-source voltage of P-channel MOSFET Q10 is safe, and filtering by filter capacitor C13 stabilizes the output voltage. When voltage spikes or abnormally high voltages occur in the circuit, causing the gate voltage of P-channel MOSFET Q10 to become too high, Zener diode D21... 21. Reverse breakdown clamps the gate voltage of P-channel MOSFET Q10 to a safe value, protecting it from damage by excessive voltage and ensuring stable operation of the main power switching module. When the external control signal ON / OFF is low, the base of NPN transistor Q11 has insufficient current, causing it to turn off. After Q11 turns off, the gate of P-channel MOSFET Q10 has no discharge path and remains high (close to +10V). P-channel MOSFET Q10 turns off because the gate-source voltage does not meet the conduction condition, disconnecting the 10V main power supply path. At this time, only the minimal static leakage current of NPN transistor Q11 and P-channel MOSFET Q10, as well as the slight power consumption of components such as Zener diode D21 and current-limiting resistor R43, achieve a low self-power consumption sleep state.

[0031] Finally, it should be noted that the above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A low self-dissipation power supply switch control circuit, comprising a control signal input module, a switch drive module, a main power switch module, a protection clamping module, and a filtering and stabilizing module, characterized in that: The control signal input module is electrically connected to the switch drive module, the switch drive module is electrically connected to the main power switch module, the main power switch module is electrically connected to the protection clamping module, and the filter stabilization module is electrically connected to the main power switch module.

2. The low self-consumption power supply switch control circuit according to claim 1, characterized in that: The control signal input module consists of an ON / OFF signal input port and a current-limiting resistor R43, and the ON / OFF signal input port is connected to the current-limiting resistor R43.

3. The low self-consumption power supply switch control circuit according to claim 1, characterized in that: The switch drive module consists of an NPN transistor Q11 and a pull-down resistor R15. One end of the pull-down resistor R15 is connected to the base of the NPN transistor Q11, and the other end is grounded. The emitter of the NPN transistor Q11 is grounded.

4. The low self-dissipation power supply switch control circuit according to claim 1, characterized in that: The main power switch module consists of a current-limiting resistor R14 and a P-channel MOSFET Q10. The source of the P-channel MOSFET Q10 is connected to the power input terminal, and the drain of the P-channel MOSFET Q10 is connected to the load terminal for powering the load.

5. The low self-dissipation power supply switch control circuit according to claim 1, characterized in that: The protection clamping module consists of a Zener diode D21, one end of which is connected to the power input terminal and the other end is connected to the gate of the P-channel MOSFET Q10.

6. The low self-dissipation power supply switch control circuit according to claim 1, characterized in that: The filtering and stabilizing module consists of a filter capacitor C13. One end of the filter capacitor C13 is connected to the drain of the P-channel MOSFET Q10, and the other end is grounded.

7. The low self-consumption power supply switch control circuit according to claim 2, characterized in that: The current-limiting resistor R43 is connected to the base of the NPN transistor Q11.

8. A low self-dissipation power supply switch control circuit according to claim 3, characterized in that: The collector of the NPN transistor Q11 is connected to one end of the current-limiting resistor R14, and the other end of the current-limiting resistor R14 is connected to the gate of the P-channel MOS transistor Q10.

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