A high power density power factor correction circuit board

Abstract

The utility model provides a high power density power factor correction circuit board, including the board body and install three -phase power correction circuit on board body, three -phase power correction circuit includes input electromagnetic interference filtering module, magnetic device module and power switch module, the board body includes first board body area, second board body area and third board body area in turn along the first direction of board body, power switch module sets up in first board body area, magnetic device module sets up in second board body area, input electromagnetic interference filtering module sets up in third board body area, the high power density power factor correction circuit board of implementation the utility model can realize high power density, can effectively prevent electromagnetic interference and reduce power tube stress simultaneously.

Description

Technical Field

[0001] This utility model relates to the field of power modules for charging piles, and more specifically, to a high power density power factor correction (PFC) circuit board. Background Technology

[0002] With the rapid development of the electric vehicle industry, the design of charging pile power modules directly affects charging efficiency, system stability, and user experience. Currently, most charging pile power modules on the market adopt specifications of around 30KW or 40KW. They typically achieve power conversion and transmission through printed circuit board (PCB) circuit design, which can meet certain charging needs. However, in existing power factor correction circuit boards, due to PCB layout issues, the power density is often low, electromagnetic interference between modules is easily generated, and the dispersed arrangement of power transistors leads to higher stress. Utility Model Content

[0003] The technical problem to be solved by this utility model is to provide a high power density power factor correction circuit board that, while achieving high power density, can effectively prevent electromagnetic interference and reduce power transistor stress.

[0004] The technical solution adopted by this utility model to solve its technical problem is: to construct a high power density power factor correction circuit board, including a board body and a three-phase power correction circuit installed on the first side of the board body; the three-phase power correction circuit includes an input electromagnetic interference filtering module, a magnetic device module and a power switch module; The plate body includes a first plate body region, a second plate body region, and a third plate body region arranged sequentially along a first direction of the plate body; The power switch module is located in the first plate area, the magnetic device module is located in the second plate area, and the input electromagnetic interference filtering module is located in the third plate area.

[0005] In the high power density power factor correction circuit board of this utility model, the magnetic device module includes a first magnetic unit, a second magnetic unit, and a third magnetic unit; The first magnetic unit, the second magnetic unit, and the third magnetic unit are spaced apart in the second plate area along a second direction of the plate, and the second direction is perpendicular to the first direction; The first magnetic unit, the second magnetic unit, and the third magnetic unit are fixed to the second plate area by vertical pins.

[0006] In the high power density power factor correction circuit board of this utility model, the first magnetic unit, the second magnetic unit and the third magnetic unit are magnetic integrated devices.

[0007] In the high power density power factor correction circuit board of this utility model, the power switch module includes a first power switch unit, a second power switch unit, and a third power switch unit; The first power switch unit, the second power switch unit, and the third power switch unit are spaced apart in the first plate area along a second direction of the plate, and the second direction is perpendicular to the first direction; The first power switch unit, the second power switch unit, and the third power switch unit each include two SiC power transistors and a heat dissipation structure for mounting the SiC power transistors.

[0008] In the high power density power factor correction circuit board of this utility model, the three-phase power correction circuit further includes an output module and an auxiliary power module; The auxiliary power module is disposed in the first end region of the first plate region and the first end region of the second plate region; The output module is disposed in the second end region of the first plate region and the second end region of the second plate region; the second end region and the first end region are directly opposite each other along the second direction of the plate, and the second direction is perpendicular to the first direction.

[0009] In the high power density power factor correction circuit board of this utility model, the output module includes multiple output filter capacitors and output terminals; The plurality of output filter capacitors are arranged in two rows in the second end region of the first plate area and the second end region of the second plate area; the output terminal is arranged in the second end region of the second plate area and adjacent to the plurality of output filter capacitors.

[0010] In the high power density power factor correction circuit board of this utility model, the auxiliary source module includes an auxiliary source unit and a signal processing unit; The auxiliary source unit is disposed in the first end region of the first plate region, and the signal processing unit is disposed in the first end region of the second plate region, with the signal processing unit adjacent to the auxiliary source unit.

[0011] In the high power density power factor correction circuit board of this utility model, the three-phase power correction circuit further includes a current sampling and zero-crossing detection module; the current sampling and zero-crossing detection module is disposed on the second side of the board body; The current sampling and zero-crossing detection module includes a first current sampling and zero-crossing detection unit, a second current sampling and zero-crossing detection unit, and a third current sampling and zero-crossing detection unit; the first current sampling and zero-crossing detection unit, the second current sampling and zero-crossing detection unit, and the third current sampling and zero-crossing detection unit are respectively positioned opposite the first magnetic unit, the second magnetic unit, and the third magnetic unit.

[0012] In the high power density power factor correction circuit board of this utility model, the power switch module further includes a first driving unit, a second driving unit, and a third driving unit. The first drive unit, the second drive unit, and the third drive unit are disposed on the second side of the plate and are respectively facing the first power switch unit, the second power switch unit, and the third power switch unit.

[0013] In the high power density power factor correction circuit board of this utility model, a plurality of first busbars are provided between the first board area and the second board area; a plurality of second busbars are provided between the second board area and the third board area; the first busbars and the second busbars are provided on the second side surface of the board.

[0014] The high power density power factor correction circuit board of this invention achieves high power density output by using a three-phase power correction circuit. By dividing the circuit board into different areas to house the input electromagnetic interference (EMI) filtering module, magnetic device module, and power switch module respectively, board space is effectively saved. Placing the EMI filtering module and magnetic device module in adjacent second and first board areas reduces EMI, while uniformly placing the power switch modules in the third board area reduces stress on the power transistors within the modules. Therefore, the high power density power factor correction circuit board of this invention achieves high power density while effectively preventing EMI and reducing power transistor stress. Attached Figure Description

[0015] The present invention will be further described below with reference to the accompanying drawings and embodiments. In the accompanying drawings: Figure 1 This is a schematic block diagram of the first side of the high power density power factor correction circuit board of this utility model; Figure 2 This is a schematic diagram of the first side of the high power density power factor correction circuit board of this utility model; Figure 3 This is a schematic diagram of the second side of the high power density power factor correction circuit board of this utility model. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0017] Figure 1 This is a schematic block diagram of the first side of the high power density power factor correction circuit board of this utility model. Figure 1 As shown, the high power density power factor correction circuit board includes a board body 100 and a three-phase power correction circuit mounted on a first side of the board body. The three-phase power correction circuit includes an input electromagnetic interference filtering module 10, a magnetic device module 1, and a power switch module 2; the board body 100 includes a first board body region, a second board body region, and a third board body region arranged sequentially along a first direction of the board body; the power switch module 2 is disposed in the first board body region, the magnetic device module 1 is disposed in the second board body region, and the input electromagnetic interference filtering module 10 is disposed in the third board body region.

[0018] In this invention, the three-phase power correction circuit 200 and its internal modules, namely the input electromagnetic interference filtering module 10, the magnetic device module 1, and the power switch module 2, can all be constructed using circuits and modules known in the art. The inventive point of this invention lies in the specific circuit arrangement rather than the circuit design itself, and will not be elaborated upon here.

[0019] The high power density power factor correction circuit board of this invention achieves high power density output by using a three-phase power correction circuit. By dividing the circuit board into different areas to house the input electromagnetic interference filtering module, magnetic device module, and power switch module respectively, board space can be effectively saved. Placing the input electromagnetic interference filtering module and magnetic device module in adjacent second and first board areas reduces electromagnetic interference, while uniformly placing the power switch modules in the third board area reduces stress on the individual power transistors within the power switch modules. Therefore, the high power density power factor correction circuit board of this invention can achieve high power density while maintaining stable and efficient operation.

[0020] Figure 2 This is a schematic diagram of the first side of the high power density power factor correction circuit board of this utility model. Figure 3 This is a schematic diagram of the second side of the high power density power factor correction circuit board of this utility model. Further as... Figures 1-3As shown, the plate 100 is a rectangular plate, and the first plate region 110, the second plate region 120, and the third plate region 130 are sequentially distributed on the first side surface of the plate 100 along the length of the rectangular plate. In a preferred embodiment of this utility model, the plate 100 may be a four-layer plate design.

[0021] The magnetic device module 1 includes a first magnetic unit 1-1, a second magnetic unit 1-2, and a second magnetic unit 1-3. The first magnetic unit 1-1, the second magnetic unit 1-2, and the second magnetic unit 1-3 are spaced apart along a second direction (i.e., the width direction) of the plate in the second plate region 120, and the second direction is perpendicular to the first direction. The first magnetic unit 1-1, the second magnetic unit 1-2, and the second magnetic unit 1-3 are fixed to the second plate region 120 by vertical pins.

[0022] In a preferred embodiment of this utility model, the first magnetic unit 1-1, the second magnetic unit 1-2, and the second magnetic unit 1-3 are magnetic integrated devices. Figure 2 It can be seen that the magnetic unit occupies a large portion of the first side of the rectangular plate 100. Therefore, reducing the volume of the magnetic unit through magnetic integration greatly helps to reduce the overall volume of the rectangular plate 100 and improve the power density of the module. In a preferred embodiment of this invention, magnetic integration technology is used to integrate the inductors of the first magnetic unit 1-1, the second magnetic unit 1-2, and the second magnetic unit 1-3 (e.g., the interleaved parallel phases of a three-phase power correction circuit) into a single magnetic core, which can effectively optimize the size and performance of the magnetic components. Therefore, this embodiment can provide a highly efficient, compact, and highly reliable energy conversion solution for the charging module through magnetic integration technology.

[0023] The power switch module 2 includes a first power switch unit 2-1, a second power switch unit 2-2, and a third power switch unit 2-3. The first power switch unit 2-1, the second power switch unit 2-2, and the third power switch unit 2-3 are spaced apart along a second direction (width direction) of the board body in the first board body region 110. Each of the first power switch unit 2-1, the second power switch unit 2-2, and the third power switch unit 2-3 includes two SiC power transistors and a heat dissipation structure for mounting the SiC power transistors. Figure 2As shown, the first power switch unit 2-1, the second power switch unit 2-2, and the third power switch unit 2-3 are all disposed in the first board area 110, located at the end along the length of the board. Each switch unit includes two SiC power transistors, thus the short spacing between the SiC power transistors reduces parasitic parameters in the circuit and lowers the stress on the switching transistors. Furthermore, SiC power transistors feature low on-resistance and fast switching characteristics, significantly reducing total losses, improving energy conversion efficiency, and achieving high power density.

[0024] Further as Figure 2 As shown, the three-phase power correction circuit further includes an output module 3 and an auxiliary power source module 4; the auxiliary power source module 4 is disposed in the first end region of the first plate region 110 and the first end region of the second plate region 120; the output module 3 is disposed in the second end region of the first plate region 110 and the second end region of the second plate region 120; the second end region and the first end region are directly opposite each other along the second direction (width direction) of the plate.

[0025] Further as Figure 2 As shown, the output module 3 includes multiple output filter capacitors 3-1 and output terminals 3-2; the multiple output filter capacitors 3-1 are arranged in two rows in the second end region of the first board region 110 and the second end region of the second board region 120; the output terminals 3-2 are arranged in the second end region of the second board region 120 and adjacent to the multiple output filter capacitors 3-1. Further as... Figure 2 As shown, the output module 3 includes eight output filter capacitors 3-1, arranged in a row of four, and the output terminal 3-2 is located in the second end region of the second plate area 120, near the third plate area 130. The placement of the output filter capacitors 3-1 close to the output terminal 3-2 helps to improve the quality of the output waveform.

[0026] Further as Figure 2As shown, the auxiliary power module 4 includes an auxiliary power unit 4-1 and a signal processing unit 4-2. The auxiliary power unit 4-1 is located in the first end region of the first board area 110, and the signal processing unit 4-2 is located in the first end region of the second board area 120, with the signal processing unit 4-2 adjacent to the auxiliary power unit 4-1. The signal processing unit 4-2 adopts a control board structure design, which can be plugged into the first end region of the second board area 120, maintaining a certain safety distance from the main power section of the three-phase power correction circuit 200. The control board design allows for a separate connection from the board 100, facilitating control board replacement and maintenance, and helping to reduce interference from the power section to the control signal, thereby improving circuit performance and reliability.

[0027] In a preferred embodiment of this invention, the three-phase power correction circuit adopts a multi-phase interleaved parallel three-phase half-bridge rectifier design, and the modulation strategy employs Triangular Current Mode (TCM) and Discontinuous Pulse Width Modulation (DPWM) modes. When the input current is small, the TCM strategy is used, which enables zero voltage switching (ZVS) of all switches in the module, significantly increasing the switching frequency, reducing the size of the magnetic unit, and increasing the power density. Simultaneously, to alleviate the problem of large ripple current in TCM mode, the three-phase power correction circuit uses a multi-phase interleaved parallel configuration to ensure that the phases of each phase are staggered. This not only smooths the overall input current ripple but also allows the switches in each interleaved parallel phase to share the input current evenly, thereby reducing the current stress on the switches and improving the module's overcurrent capability. This design effectively compensates for the large input current ripple problem of TCM and improves the quality and stability of the input current waveform. When using TCM, the inductor current ripple is relatively large. Therefore, to avoid magnetic saturation that may be caused by TCM mode, the module switches to DPWM when the input current increases. In this mode, the module's ripple current is smaller. Moreover, compared with traditional Sinusoidal Pulse Width Modulation (SPWM), DPWM can effectively reduce the number of switching operations of the module's power devices, thereby reducing switching losses. This allows the module to support higher switching frequencies while maintaining low switching losses, improving the module's power density and energy transfer efficiency. The three-phase power correction circuit 200 and its internal modules, namely the input electromagnetic interference filtering module 10, the magnetic device module 1, and the power switch module 2, can all adopt circuit and module device structures known in the art. Furthermore, the aforementioned triangular current mode and discontinuous pulse width modulation are also known in the art. The inventive point of this utility model lies in the specific circuit arrangement rather than the circuit and its control method, and will not be elaborated here.

[0028] Further as Figure 3As shown, due to the adoption of the TCM strategy, accurate sampling of the inductor current ripple is required. To ensure the accuracy of inductor current sampling, the three-phase power correction circuit further includes a current sampling and zero-crossing detection module; the current sampling and zero-crossing detection module is disposed on the second side of the board and includes a first current sampling and zero-crossing detection unit 5-1, a second current sampling and zero-crossing detection unit 5-2, and a third current sampling and zero-crossing detection unit 5-3; the first current sampling and zero-crossing detection unit 5-1, the second current sampling and zero-crossing detection unit 5-2, and the third current sampling and zero-crossing detection unit 5-3 are respectively directly opposite the first magnetic unit 1-1, the second magnetic unit 1-2, and the second magnetic unit 1-3.

[0029] Further as Figure 3 As shown, the power switch module 2 further includes a first drive unit 2-7, a second drive unit 2-8, and a third drive unit 2-9; the first drive unit 2-7, the second drive unit 2-8, and the third drive unit 2-9 are disposed on the second side of the plate and are respectively facing the first power switch unit 2-1, the second power switch unit 2-2, and the third power switch unit 2-3.

[0030] Further as Figure 3 As shown, a plurality of first busbars 6-1, 6-2, and 6-3 are disposed between the first plate region 110 and the second plate region 120; a plurality of second busbars 7-1 and 7-2 are disposed between the second plate region 120 and the third plate region 130; the first busbars and the second busbars are disposed on the second side surface of the plate. Figure 3 As shown, multiple busbars (corresponding to the first busbars 6-1, 6-2, 6-3 and the second busbars 7-1, 7-2, respectively) are arranged on the three-phase input side and the bus output side of the three-phase power correction circuit to enhance current transmission capability. By laying busbars, the ability to handle excessive current can be improved within the effective copper space, significantly reducing parasitic parameters and minimizing localized overheating. Compared to traditional wiring designs, this effectively optimizes the current distribution within the module, alleviates severe overheating in high-current areas, and significantly improves the overall stability of the circuit.

[0031] Further as Figure 3 As shown, the input electromagnetic interference filtering module 10 may include an input electromagnetic interference filtering unit and a zero-power relay. The input electromagnetic interference filtering unit can be used to filter out noise from the power grid side. By externally controlling the zero-power relay to turn off, the standby power consumption of the module can be reduced to 0W, thereby reducing the module's power consumption. The input electromagnetic interference filtering unit and the zero-power relay are mounted on the first side of the board 100.

[0032] In a preferred embodiment of this invention, the three-phase power correction circuit (TCM) and the multi-phase interleaved parallel three-phase half-bridge rectifier with DPWM switching are used as the foundation. SiC power transistors are employed as the core power devices, increasing the switching frequency to significantly improve energy transfer efficiency and power density. Simultaneously, the circuit board layout is optimized, and the busbar design enhances the module's internal overcurrent capability. Furthermore, magnetic integration technology effectively reduces the size of magnetic components. This design increases the output power by 50% without increasing the PCB size, making the module more suitable for high-power applications such as electric vehicle charging stations.

[0033] This invention presents a high-power-density power factor correction circuit board. Through a three-phase power correction circuit, SiC power transistors, high switching frequency, magnetic integration, and optimized circuit board layout, it achieves high efficiency and high power density, enabling a 60kW output within a size of 395.1mm × 295mm × 62.5mm. The power density reaches 8.3W / cm³, a 50% improvement over traditional 40kW modules. The module's peak conversion efficiency reaches 97.5%, and its full-load efficiency is 97%. Compared to existing technologies, this invention significantly improves power density and charging efficiency without increasing size, meeting the fast charging needs of electric vehicles, and offering advantages in miniaturization, high reliability, and cost.

[0034] Although this utility model has been described through specific embodiments, those skilled in the art should understand that various modifications and equivalent substitutions can be made to this utility model without departing from its scope. Furthermore, various modifications can be made to this utility model for specific situations or materials without departing from its scope. Therefore, this utility model is not limited to the specific embodiments disclosed, but should include all embodiments falling within the scope of the claims of this utility model.

[0035] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A high power density power factor correction circuit board, characterized in that, The system includes a board and a three-phase power correction circuit mounted on a first side of the board; the three-phase power correction circuit includes an input electromagnetic interference filtering module, a magnetic device module, and a power switch module. The plate body includes a first plate body region, a second plate body region, and a third plate body region arranged sequentially along a first direction of the plate body; The power switch module is located in the first plate area, the magnetic device module is located in the second plate area, and the input electromagnetic interference filtering module is located in the third plate area.

2. The high power density power factor correction circuit board according to claim 1, characterized in that, The magnetic device module includes a first magnetic unit, a second magnetic unit, and a third magnetic unit; The first magnetic unit, the second magnetic unit, and the third magnetic unit are spaced apart in the second plate area along a second direction of the plate, and the second direction is perpendicular to the first direction; The first magnetic unit, the second magnetic unit, and the third magnetic unit are fixed to the second plate area by vertical pins.

3. The high power density power factor correction circuit board according to claim 2, characterized in that, The first magnetic unit, the second magnetic unit, and the third magnetic unit are magnetic integrated devices.

4. The high power density power factor correction circuit board according to claim 1, characterized in that, The power switch module includes a first power switch unit, a second power switch unit, and a third power switch unit; The first power switch unit, the second power switch unit, and the third power switch unit are spaced apart in the first plate area along a second direction of the plate, and the second direction is perpendicular to the first direction; The first power switch unit, the second power switch unit, and the third power switch unit each include two SiC power transistors and a heat dissipation structure for mounting the SiC power transistors.

5. The high power density power factor correction circuit board according to claim 1, characterized in that, The three-phase power correction circuit further includes an output module and an auxiliary power module; The auxiliary power module is disposed in the first end region of the first plate region and the first end region of the second plate region; The output module is disposed in the second end region of the first plate region and the second end region of the second plate region; the second end region and the first end region are directly opposite each other along the second direction of the plate, and the second direction is perpendicular to the first direction.

6. The high power density power factor correction circuit board according to claim 5, characterized in that, The output module includes multiple output filter capacitors and output terminals; The plurality of output filter capacitors are arranged in two rows in the second end region of the first plate area and the second end region of the second plate area; the output terminal is arranged in the second end region of the second plate area and adjacent to the plurality of output filter capacitors.

7. The high power density power factor correction circuit board according to claim 5, characterized in that, The auxiliary source module includes an auxiliary source unit and a signal processing unit; The auxiliary source unit is disposed in the first end region of the first plate region, and the signal processing unit is disposed in the first end region of the second plate region, with the signal processing unit adjacent to the auxiliary source unit.

8. The high power density power factor correction circuit board according to claim 3, characterized in that, The three-phase power correction circuit further includes a current sampling and zero-crossing detection module; the current sampling and zero-crossing detection module is disposed on the second side of the board. The current sampling and zero-crossing detection module includes a first current sampling and zero-crossing detection unit, a second current sampling and zero-crossing detection unit, and a third current sampling and zero-crossing detection unit; the first current sampling and zero-crossing detection unit, the second current sampling and zero-crossing detection unit, and the third current sampling and zero-crossing detection unit are respectively positioned opposite the first magnetic unit, the second magnetic unit, and the third magnetic unit.

9. The high power density power factor correction circuit board according to claim 4, characterized in that, The power switch module further includes a first drive unit, a second drive unit, and a third drive unit; The first drive unit, the second drive unit, and the third drive unit are disposed on the second side of the plate and are respectively facing the first power switch unit, the second power switch unit, and the third power switch unit.

10. The high power density power factor correction circuit board according to any one of claims 1 to 9, characterized in that, A plurality of first busbars are provided between the first plate area and the second plate area; a plurality of second busbars are provided between the second plate area and the third plate area; the first busbars and the second busbars are provided on the second side surface of the plate.

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