Electron beam semiconductor device
CN309554372SActive Publication Date: 2025-10-2148TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Patent Information
- Application Number
- CN202530075476.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-20
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2040-02-20
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Figure 000035_ABST
Abstract
1. Name of the designed product: electron beam semiconductor device. 2. Use of the designed product: for processing semiconductor material using electron beam technology. 3. Design points of the designed product: in shape. 4. Picture or photo best showing the design points: assembly state perspective view.
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